242 results about "Picosecond laser" patented technology

The invention belongs to the technical field of crystal processing, and relates to a method for obtaining a single crystal diamond (111) surface wafer by using double-pulse-width laser. Femtosecond laser and picosecond laser are adopted for machining and stripping the blocky single crystal diamond to obtain a first crystal face (111), then femtosecond laser and picosecond laser are continuously adopted for machining and stripping the remaining blocky single crystal diamond, and the blocky single crystal diamond is obtained; the process for obtaining the crystal face (111) comprises the following steps of: scanning femtosecond laser on the crystal face (111) to process a plurality of graphitization modification lines which are full of the crystal face (111) and are parallel to each other, wherein the graphitization modification lines are parallel to the crystal orientation of a diagonal line [110] of the crystal face (001); carrying out scanning processing along the graphitization modification line by utilizing picosecond laser, so as to form a leap crack on the basis of the graphitization modification line of the crystal face (111); and then stripping is carried out. By means of the method, the wafer with the complete (111) face can be obtained through cutting in the ultra-thick (001) CVD monocrystal diamond.

The invention relates to the technical field of heterojunction solar cells, and particularly discloses a selective electrode contact heterojunction cell preparation method and a heterojunction cell, and the method comprises the steps: carrying out the first texturing of a silicon wafer substrate, carrying out the mask layer preparation of the textured silicon wafer, and carrying out the first patterning processing of the silicon wafer. Performing slotting treatment on two sides of the silicon wafer based on picosecond laser, performing secondary texturing on the silicon wafer, placing the cleaned silicon wafer in a second texturing mixed solution so as to generate a large textured pyramid structure on the inner bottom surface of a groove in the two sides of the silicon wafer, and removing the first mask layer from the silicon wafer after secondary texturing to obtain a second textured pyramid structure; sequentially depositing a plurality of layers including an intrinsic amorphous silicon layer and the like on the two surfaces of the silicon wafer, printing a second mask layer in a counterpoint manner in other areas of the silicon wafer which is provided with the groove in the first time of patterning based on exposure and development, electroplating a copper grid line on the silicon wafer, and sequentially removing the second mask layer and a copper seed layer on the silicon wafer after electroplating the grid line; the selective electrode contact copper grid line heterojunction solar cell is obtained, the problem of grid separation of the copper grid lines is solved, and the cell efficiency is improved.

The invention discloses a wavelength-adjustable high-power picosecond all-solid-state laser. The microchip seed source adopts a passive Q-switching principle, can directly generate laser with the pulse width as narrow as 300ps, is high in seed laser efficiency, good in beam quality and large in energy, can synchronously output TTL (transistor-transistor logic) level, and is used for controlling the pulse duration and delay of a 808nm QCW pumping source; the optical isolator protects the front-stage microchip solid laser from being damaged by returned light of the rear-stage amplifier; the single-rod two-way end pump amplifier amplifies laser pulse energy output by the microchip solid laser; the light beam shaper comprises a Galileo laser beam shrinking system and a soft edge diaphragm and is used for shaping light beams; the single-rod one-way end pump amplifier amplifies the pulse energy of the preceding-stage laser; and the frequency multiplier performs frequency conversion on the output laser, and outputs wavelength-adjustable picosecond laser with millifocus magnitude, high power and high beam quality.

The invention relates to a method for laser separation of diamond single crystals, and relates to the technical field of diamond cutting, a modified layer is formed on a single crystal diamond through picosecond laser, and then the single crystal diamond is separated along the modified layer through a splitting machine. The method has the advantages that the efficiency is high, the product is not easy to break, the section has no taper, and the upper surface and the lower surface have no ablation marks.

The invention provides a laser de-bonding method and device, electronic equipment and a storage medium. The method comprises the following steps: determining a de-bonding area on a semiconductor substrate to be de-bonded; wherein the de-bonding area is made of an inorganic material; selecting laser parameters of a pulse laser; wherein the pulse laser comprises any one of a nanosecond laser, a picosecond laser and a femtosecond laser, and the laser parameters comprise laser wavelength and laser pulse width and frequency; and controlling the pulse laser to irradiate the de-bonding area according to the laser parameters. According to the laser de-bonding method, a nanosecond laser, a picosecond laser or a femtosecond laser is adopted to irradiate a de-bonding area on a to-be-de-bonded device, so that de-bonding treatment is carried out on the de-bonding area, and the de-bonding efficiency of taking an inorganic material as a to-be-de-bonded material is improved.

The invention discloses an ultrafast laser partition impact strengthening method and device for a thin-wall covered edge of a composite blade. According to the method, the surface of the thin-wall covered edge is strengthened by utilizing the characteristics of instantaneous high pressure of shock waves induced by ultrafast laser and accurate and controllable propagation depth, and meanwhile, according to the thickness characteristics of different areas of the covered edge, laser with different pulse widths is selected to carry out partitioned strengthening treatment, so that accurate regulation and control of a surface residual stress field are realized on the premise of inhibiting deformation; the problem of cooperative control of surface strengthening deformation and a stress field of the thin-wall edge covering structure is solved. According to the thickness characteristics of different areas of the edge covering structure, based on the principle that the shorter the laser pulse width is, the shallower the shock wave propagation depth is, the shallow the depth of a residual stress field influence layer is and the edge covering structure is not prone to deformation, a femtosecond / picosecond pulse width laser combined shock peening method is provided, and femtosecond laser shock is adopted in a thin-wall area; femtosecond laser or picosecond laser with relatively long pulse width is adopted for impact in a wall thickness area, and precise regulation and control of a surface stress field are achieved on the premise of restraining thin-wall wrapping edge deformation.

The invention discloses a non-consistency multi-focus unit modification system for laser slicing of transparent materials. The non-consistency multi-focus unit modification system comprises an ultra-short pulse laser, a light beam regulation and control system, a light beam shaping system, a focusing objective lens, a visual positioning system and a high-precision three-dimensional motion platform, a transparent material sample wafer to be sliced is placed on the high-precision three-dimensional motion platform; the ultrashort pulse laser provides picosecond laser beams for the whole system, the laser beams generated by the ultrashort pulse laser are transmitted to the light beam shaping system through the light beam regulation and control system to generate multiple inconsistent laser beams, and the multiple inconsistent laser beams are focused and shrunk through the focusing objective lens to obtain multiple inconsistent focuses. The focus is focused in a transparent material sample wafer on a high-precision three-dimensional motion platform for slicing; wherein the high-precision three-dimensional motion platform realizes the movement of a transparent material sample wafer in x, y and z directions; and the visual positioning system is used for identifying and positioning the transparent material sample. On the premise that the slicing quality is guaranteed, the processing efficiency is remarkably improved.

The invention discloses a high-beam-quality 193nm ultraviolet laser generating device, and relates to the technical field of laser electronics. The device comprises a 1064nm picosecond pumping laser source and a 2053nm picosecond laser source which are used for generating pumping laser; the frequency doubling crystal, the frequency quadruplicating crystal, the 213nm sum frequency crystal and the 193nm sum frequency crystal are used for nonlinear frequency conversion; the temperature control device is used for controlling the temperature of the crystal; the dichroic mirror is used for separating the laser; the cylindrical mirror is used for beam shaping; and a lens for focusing the light beam. According to the device, a 1064nm light source is used for performing quadruplicated frequency to obtain 213nm laser, and the obtained 213nm laser and 2053nm laser are input into a nonlinear frequency conversion module to obtain 193nm laser. The device ensures high power of laser output, has good stability and excellent light beam quality, is simple in structure, and is suitable for the fields of photoetching, spectroscopy, medicine and the like.

The invention provides a femtosecond and picosecond composite laser welding method and equipment for heterogeneous materials. The femtosecond and picosecond composite laser welding method specifically comprises the steps that glass and metal are stacked on a three-dimensional motion platform and clamped through a clamp; femtosecond laser (with the pulse width of 50-1000 fs and the peak power density of 10-10 W / cm) and picosecond laser (with the pulse width of 1-200 ps and the peak power density of 10-10 W / cm) are adjusted by different beam expanding systems, and after focusing, picosecond light spots completely wrap femtosecond light spots; the composite laser acts on a welding area and a femtosecond laser focusing interface in a time-space synchronization mode, plasma is excited to enable metal to be melted to fill gaps, picosecond laser forms a wide-area heating field on the femtosecond periphery, a violent temperature gradient is regulated and controlled to be in a gentle state, the preheating and after-heating effects are achieved, cracks are restrained, absorption is enhanced, and the welding strength is improved; and the composite laser is controlled by a control system to weld according to a specified path, so that high-strength connection of the glass / metal heterogeneous materials is realized. And the method becomes a breaking key for regulating and controlling the temperature gradient, inhibiting crack generation and improving the welding strength.

The invention discloses a laser etching current collector applied to a lithium metal negative electrode of a solid-state battery, and relates to the technical field of solid-state batteries. Concave holes are formed in the surface of the current collector; the diameter of each concave hole is 10-50 nm, the depth of each concave hole is 30-80 nm, and the distance between every two adjacent concave holes is 10-50 nm. The concave hole is obtained by etching the metal copper layer of the current collector through purple picosecond laser; the method can be applied to a lithium metal negative electrode of a solid-state battery, and specifically comprises the following steps: in a dehumidification environment, rolling a lithium strip and a laser etching current collector in a rubber roller press so as to form the lithium metal negative electrode taking the laser etching current collector as a middle interlayer; tests show that the current collector has good peel strength and battery coulombic efficiency, the technical effect that the current collector is provided with a carbon coating layer can be achieved, meanwhile, the problem of wrinkles existing in an existing current collector during rolling in the preparation process is solved, and the production yield is increased.

The invention relates to the technical field of solar cells, and discloses a laser-assisted etching slotting method for preparing high-doping-concentration P + polycrystalline silicon and application. The grooving method comprises the following steps: preparing a tunneling SiOx layer and an i-polysi layer on the back surface of a silicon wafer; performing patterning etching by using green picosecond laser so as to remove the i-polysi layer and the tunneling SiOx layer in a laser region; removing impurities in a laser area through single-side acid pickling; boron diffusion is carried out, P + polycrystalline silicon is formed on the i-polysi layer in the non-laser area, a P + emission layer is generated in the laser area, and a BSG layer is generated on the back faces of the P + polycrystalline silicon and the P + emission layer; performing patterning etching by using green picosecond laser to remove the BSG layer in the laser area; and carrying out alkali wet etching to remove the P + emission layer in the laser area so as to form a notch. According to the grooving method, the notch with the ideal grooving depth is formed, P + polycrystalline silicon with high doping concentration can be formed in the non-laser area to reduce the contact resistivity, and the cost is low.

The invention discloses a groove wall type sulfur positive electrode material and a preparation method thereof, and relates to the technical field of electrode materials. The reduced graphene oxide aerogel is used as a carrier of active component sulfur, a channel is prepared on the surface of the reduced graphene oxide aerogel based on a picosecond laser processing technology, the groove wall type sulfur positive electrode material is obtained, a unique layered pore wall structure can be realized in an electrode, a greater inhibition effect can be achieved on a shuttle effect of lithium-sulfur battery polysulfide, and the performance of the lithium-sulfur battery is improved. And active substances at the bottoms of the walls can be immersed into the channels along with the electrolyte to be fully utilized. The positive electrode material prepared on the basis of a picosecond laser processing technology has the characteristics of excellent use performance and high stability.

The invention discloses a silicone rubber plate for blending bone cement and a preparation process thereof, and relates to the technical field of silicone rubber plates, the preparation process comprises the following steps: adding silicone rubber, fluorinated silicone rubber and a double vulcanizing agent into a kneading machine, adjusting roller spacing, preparing into tablets, and vulcanizing to obtain a silicone rubber raw sheet; cutting and forming a silicone rubber raw sheet, and ultrasonically cleaning in ethanol for later use; the preparation method comprises the following steps: treating the surface of a cleaned raw silicon rubber sheet by using a nanosecond laser and performing laser drilling treatment by using a picosecond laser in sequence, then preparing nano silicon dioxide through hydrolytic condensation of ethyl silicate to fill holes, cleaning a drilling area on the surface by using the picosecond laser, and finally performing hydrophobic modification by using hexamethyldisilazane to obtain the super-hydrophobic silicon rubber plate. The preparation method comprises the following steps: carrying out sulfydryl modification on the surface of a super-hydrophobic silicone rubber plate, grafting ammonium bromide on the surface of the super-hydrophobic silicone rubber plate through an ultraviolet sulfydryl olefin reaction, grafting through an L-proline reaction, and finally absorbing nitric oxide to be saturated to obtain the silicone rubber plate for blending the bone cement.

The utility model relates to a picosecond laser forming pelleter, which is characterized in that an unwinding mechanism is mounted on one side of a slitting mechanism, a reinforcing mechanism is mounted on one side of the slitting mechanism, a belt conveying mechanism is mounted on one side of the reinforcing mechanism, and a cutting mechanism, a detection mechanism, a dust removal mechanism and a knockout mechanism are mounted on one side of the belt conveying mechanism; according to the picosecond laser forming piece making machine, the unwinding mechanism unwinds the pole piece material belt, the slitting mechanism cuts off the bottom edge of the pole piece material belt and collects bottom edge waste, the reinforcing mechanism reinforces the tab area of the pole piece so as to prevent the tab from being folded, and the cutting mechanism cuts the pole piece material belt to form the pole piece. The belt conveying mechanism sequentially conveys the cut pole pieces to pass through the detection mechanism, the dust removal mechanism and the knockout mechanism, the detection mechanism performs size and flaw detection on the pole pieces, the dust removal mechanism performs dust removal on the two end faces of the pole pieces, and the knockout mechanism performs classified collection on the pole pieces according to detection results of the detection mechanism.

The invention discloses double-laser machining equipment and method for tool machining. The double-laser machining equipment comprises a tool clamping mechanism and a gantry mounting frame which are arranged on a workbench. The cutter clamping mechanism drives the cutter to rotate; the infrared continuous laser processing head and the purple picosecond laser processing head are respectively mounted on the gantry mounting frame through a lifting mechanism, an infrared continuous laser beam emitted by the infrared continuous laser acts on the cutter through the infrared continuous laser processing head, and a purple picosecond laser beam emitted by the purple picosecond laser acts on the cutter through the purple picosecond laser processing head; the cutter clamping mechanism, the lifting mechanism, the infrared continuous laser, the infrared continuous laser machining head, the purple picosecond laser and the purple picosecond laser machining head are all electrically connected with the controller. The infrared continuous laser and the purple picosecond laser are integrated in the same equipment, the cutter is modified through double-laser cooperation, dynamic adjustment of laser parameters is achieved in combination with the lifting mechanism and the controller, the heat influence is effectively reduced, and the machining quality stability is improved.

The invention provides a preparation method of a back contact heterojunction solar cell. The method comprises the following steps of: after polishing and cleaning two surfaces of a silicon wafer, sequentially depositing a passivation layer i, a doping layer n, a silicon nitride isolation layer and a sacrificial layer on the back surface; the sacrificial layer pattern is etched through picosecond laser, and the doping layer n layer is exposed through HF acid corrosion; synchronously etching a passivation layer i and a doping layer n in a back opening region by adopting alkali liquor, and performing front texturing; a passivation layer i and a doping layer p are secondarily deposited on the back surface, a doping layer n is secondarily exposed through HF acid after a P region pattern is etched through laser, a passivation layer i and an anti-reflection layer are deposited on the front surface, a TCO transparent conductive layer is deposited on the back surface, a P / N region electrode is subjected to silk-screen printing and light injection curing, and finally a P / N region is isolated through laser. According to the method, the rear texturing process is combined with the laser and wet etching, so that the front film layer is prevented from being corroded by the wet method, the process is simplified, the cost is reduced, and high-efficiency and low-damage industrial mass production is realized.

An opto-acoustic metrology device, such as a picosecond laser acoustic metrology device, includes a laser light source that generates pulsed light with a first wavelength and a supercontinuum generator spectrally broadens the pulsed light. A pump arm receives the pulsed light and generates pump pulses to irradiate a target sample to cause transient perturbation in the target sample. A probe arm receives the pulse light and generates probe pulses to irradiate the target sample to produce reflected probe pulses that are modulated based on the transient perturbation in the target sample. The pump pulses and the probe pulses have different wavelengths or the same wavelengths that are selected from the spectrally broadened pulsed light, e.g., using a filter located before the pump and probe arms or within one of the pump or probe arms. A property of the target sample may be determined based on reflected probe pulses.

The invention relates to the technical field of laser drilling, in particular to a multiband laser time-sharing machining system for a large-length-diameter-ratio deep hole in a superhard and brittle material, which comprises a shell, and a picosecond laser, a femtosecond laser, two field lenses, a dichroic mirror, a beam shaping device and a laser head which are arranged in the shell, and a heat dissipation device is arranged at the bottom end of the beam shaping device in the shell. A multi-stage chip removal device is installed at the end of the laser head, and the picosecond laser and the femtosecond laser are combined through a dichroic mirror and share the same light beam shaping device. The femtosecond laser device and the picosecond laser device are integrated, lasers of different wave bands are emitted in a time-sharing mode, and efficient and high-precision machining of the large-length-diameter-ratio deep hole of the super-hard and brittle material is achieved. Meanwhile, the multi-stage chip removal device cleans fines generated by machining in time in an air blowing and negative pressure suction mode, and the machining quality is guaranteed.

The invention discloses a driving control system and a driving control method of a picosecond laser seed source, and belongs to the field of picosecond laser seed sources. The Peltier control adjusting circuit adjusts the driving power of the Peltier driving circuit according to the temperature state signal and the target temperature by utilizing a PID dynamic adjusting method, and the Peltier adjusts the real-time temperature of the seed source so that the environment temperature of the seed source is maintained at the target temperature; the seed source control adjusting circuit judges whether the temperature state signal meets the working condition of the seed source or not; and the seed source output feedback circuit feeds the driving current signal back to the seed source control and regulation circuit in real time and integrates the target driving current signal and the output driving current signal to control the seed source driving circuit. According to the invention, the working environment temperature of the seed source is accurately and dynamically adjusted in real time and the working delay is set, so that parameters such as waveform uniformity of electric pulses output in a high-frequency working state can meet the use requirements of laser equipment.

The invention discloses a high-power ultrafast laser shaping method and device, a medium and a product, and relates to the technical field of laser, and the method comprises the steps: obtaining the two-dimensional energy value distribution data of a light spot; target homogenization light spot data, laser beam data and a transmission area width ratio are set, and DOE phase data are obtained; a homogenized light spot energy distribution curve graph is obtained according to the two-dimensional energy value distribution data of the light spots and the DOE phase data; obtaining a homogenization degree index based on the homogenization light spot energy distribution curve graph; determining whether the homogenization degree index meets a target homogenization requirement or not; if the homogenization degree index does not meet the target homogenization requirement, resetting the width ratio of the transmission area, and returning to execute the step of obtaining the DOE phase data until the homogenization degree index meets the target homogenization requirement; and obtaining a homogenized light spot result according to the DOE phase data and the two-dimensional energy value distribution data of the light spot. According to the invention, the uniformity of the quality of homogenized light spots when different high-power picosecond lasers use the same design to homogenize and shape DOE can be ensured.

The invention belongs to the technical field of reflectors, and particularly discloses a reflector preparation method based on micro-channel heat dissipation, and the method comprises the steps: obtaining a first mirror body and a second mirror body, and plating a reflecting film on one side of the first mirror body and one side of the second mirror body; the method comprises the following steps: performing micro-fluidic groove parameterization design according to three-dimensional data of a lens body, establishing an optimization model which only takes geometric parameters as independent variables, outputting performance evaluation indexes through coupling heat transfer-fluid-structure simulation, and performing iterative updating on the geometric parameters based on an evaluation result; processing parameters are generated, a micro-flow groove is formed through picosecond laser etching, and the groove wall is polished through femtosecond laser; deionized water washing, cerium oxide grinding, sodium bicarbonate cleaning and secondary washing are sequentially carried out; and bonding the two mirror bodies into a mirror surface. According to the method, under the condition that processing, tolerance and operation boundary constraints are met, comprehensive optimization of low temperature rise, low surface shape change and low pressure drop of the mirror surface is achieved, and the optical stability and reliability under high-power application are improved.

The invention provides a method for improving titanium alloy picosecond laser drilling quality, which belongs to the technical field of laser processing, and comprises the following steps: S1, pretreating a titanium alloy material to be processed and tested, and fixing the titanium alloy material on a workbench; s2, a machining position is positioned, and laser parameters and paths required by machining are set; and S3, a common scanning number value is set, and machining is started. And S4, observing the small hole opening condition, if the small hole is opened, reducing the scanning times, and if the small hole is not opened, otherwise. And repeatedly processing and adjusting. And S5, a new titanium alloy material is replaced, the formal machining position is positioned, and laser parameters and the number of scanning times for just getting through are set. By means of the method, the proper scanning frequency is determined, energy absorbed by the material can just meet the punching requirement, excessive accumulation of the energy is avoided, and therefore splash is reduced, and the thickness of an accumulation layer is reduced.

The invention relates to a picosecond laser with high beam quality, comprising: a pumping source for providing pumping energy to an amplification crystal; the laser oscillator is used for providing signal light with high light beam quality for the amplification crystal; the amplification crystal is used for amplifying the signal light power; the pump light shaping system comprises a first lens group and a third plano-convex lens, the first lens group is arranged between the pump source and the amplification crystal and formed by combining a first plano-convex lens and a second plano-convex lens, the third plano-convex lens and the first lens group are arranged at intervals, and the pump light is subjected to quasi-collimation processing through the first lens group; third plano-convex lenses which are arranged at intervals are used for focusing, so that the Rayleigh length of the pump light after focusing completely falls into the amplification crystal; the signal light shaping system comprises a fourth plano-convex lens arranged on the upstream of the light path of the amplification crystal and a second lens group formed by combining a fifth plano-convex lens and a first plano-concave lens, and the signal light is focused through the fourth plano-convex lens. After beam expansion and collimation are carried out through the second lens group, the Rayleigh length of the signal light completely falls into the amplification crystal, the pump light and the signal light are in a uniform distribution state in the amplification crystal, and the amplification crystal generates uniform heat distribution to eliminate the thermal lens effect. The generation probability of a thermally induced birefringence effect and a thermally induced teratosis effect is reduced, and the amplification efficiency of the light beam and the quality of the output light beam are greatly improved.

The utility model discloses a precise picosecond laser film cutting machine, which relates to the technical field of semiconductor processing equipment, and comprises an X-axis linear module extending along the horizontal direction; the Z-axis linear module is in sliding connection with the X-axis linear module; the laser galvanometer is fixedly mounted at the moving end of the Z-axis linear module; the CCD camera is fixedly mounted at the moving end of the Z-axis linear module and is adjacent to the laser galvanometer; the ultraviolet picosecond laser is aligned with the light path of the laser galvanometer; the Y-axis linear module is perpendicular to the plane where the X-axis linear module and the Z-axis linear module are located; and the product jig workbench is fixedly arranged at the moving end of the Y-axis linear module. Accurate space positioning of the laser head and the jig workbench is achieved, flexibility and accuracy in the cutting process are guaranteed, cutting errors caused by deviation of product placement are avoided, meanwhile, damage to materials below is avoided, the requirement for clean production is met, and labor cost is reduced.

To develop a method for engraving and texturing an enamel capable of overcoming drawbacks of enamel engraving which is not widely used since it requires a mastery of the engraving technique to avoid scratching an enamel surface or altering its color.SOLUTION: A method for engraving and texturing an item (1) including a decoration (2) filled at least partially with an enamel (3) includes a step of laser ablation using a femtosecond laser or a picosecond laser onto a surface of the enamel (3) and / or within the enamel (3) to form a structure (7).SELECTED DRAWING: Figure 4A-4C

An embodiment of the present application provides a picosecond laser system and its control method, which relates to the field of ultrafast laser technology and includes the following steps: receiving the first power output by the first power detection component; determining whether the first power is within the first preset power range; if the first power is within the first preset power range, turning on the first amplification module to perform first-stage amplification on the seed laser to form the first laser; receiving the second power output by the second power detection component; determining whether the second power is within the second preset power range; if the second power is within the second preset power range, turning on the second amplification module; receiving the crystal temperature of the double-crystal series connection component output by the temperature control component; determining whether the crystal temperature is within the preset temperature range; if the crystal temperature is within the preset temperature range, adjusting the crystal temperature to the optimal temperature control range to amplify the first laser to form the second laser, and modulating it through the output module to output the target laser.

The present invention belongs to the field of semiconductor processing technology, and in particular to a multifunctional wafer picosecond laser processing device and a method of using the same. In view of the problem that the existing one-time laser chamfering action can only chamfer the top of the wafer, and the chamfer at the bottom needs to be manually flipped, which reduces the processing efficiency and is inconvenient to chamfer the positioning notch of the wafer, the following scheme is proposed, which includes a workbench, and the four corners of the top of the workbench are all fixedly provided with a first electric push rod, and the tops of the four first electric push rods are fixedly provided with the same lifting platform, which integrates multiple functions such as wafer rotation, lifting, flipping, self-adjusting movement and precise positioning, thereby realizing the automation and continuity of the wafer processing process. Through the precise control of the first electric push rod and the second electric push rod, and the driving of the first motor and the second motor, the rotation, lifting, flipping and other operations of the wafer can be efficiently completed, which significantly improves the production efficiency and flexibility.

This invention relates to a processing method for high thermal conductivity polycrystalline silicon carbide wafers, comprising the following steps: grinding and thinning a CVD-prepared polycrystalline silicon carbide wafer to obtain a pre-treated wafer; performing a full-coverage ablation treatment on the surface of the pre-treated wafer using a picosecond laser to form a modified wafer with an amorphous surface modification layer; and polishing and cleaning the modified wafer to obtain the finished wafer. This method introduces a picosecond laser into the CMP front-end for laser ablation and surface modification of the polycrystalline SiC wafer, followed by rough and fine polishing using CMP. The results show that CMP time is reduced by more than 40%, significantly improving CMP efficiency and reducing costs, while ultimately achieving a surface roughness of 0.2 nm, meeting the requirements of sub-nanometer roughness and no subsurface damage.

The invention discloses a picosecond laser lateral thinning process for manufacturing an ultrathin silicon-based nerve probe, and belongs to the technical field of implantable nerve electrode arrays. The process comprises the following steps: firstly, providing a silicon-based nerve probe matrix prepared by an MEMS process; transversely fixing the target thinned profile, and planning a laser scanning path based on the target thinned profile; a picosecond laser is adopted, lateral thinning is carried out on the target area of the probe through optimized technological parameters, and finally the thickness of the implantation area of the probe is thinned to 10-100 micrometers. According to the method, a maskless cold ablation process is adopted, the problems of complex steps and thermal stress of a traditional etching technology are avoided, high-precision and controllable processing of the thickness of the probe is achieved, the neural probe with a stepped thickness structure can be prepared, implantation damage can be remarkably reduced, and improvement of the quality and stability of long-term neural signal recording is facilitated.

The invention relates to the technical field of material surface super-hydrophobization, in particular to a fluoride-free super-hydrophobic anti-icing surface with a micro-nano composite structure and a preparation method. According to the specific technical scheme, picosecond laser is used for machining the surface of a substrate to form a micro-nano composite structure array, then the machined surface is placed in a drying oven to be subjected to annealing treatment, and the super-hydrophobic performance can be achieved without applying an extra hydrophobic modifier. The contact angle between the surface prepared through the method and water is larger than 160 degrees, and the freezing behavior of liquid drops on the surface can be almost completely inhibited in the low-temperature environment of-5 DEG C. The fluorine-free super-hydrophobic surface is simple in preparation process, high in stability, environmentally friendly, capable of adapting to various base materials and complex curved surfaces, excellent in super-hydrophobic and anti-icing performance and suitable for large-scale preparation and application.