88 results about "Picosecond laser" patented technology

The invention discloses a non-consistency multi-focus unit modification system for laser slicing of transparent materials. The non-consistency multi-focus unit modification system comprises an ultra-short pulse laser, a light beam regulation and control system, a light beam shaping system, a focusing objective lens, a visual positioning system and a high-precision three-dimensional motion platform, a transparent material sample wafer to be sliced is placed on the high-precision three-dimensional motion platform; the ultrashort pulse laser provides picosecond laser beams for the whole system, the laser beams generated by the ultrashort pulse laser are transmitted to the light beam shaping system through the light beam regulation and control system to generate multiple inconsistent laser beams, and the multiple inconsistent laser beams are focused and shrunk through the focusing objective lens to obtain multiple inconsistent focuses. The focus is focused in a transparent material sample wafer on a high-precision three-dimensional motion platform for slicing; wherein the high-precision three-dimensional motion platform realizes the movement of a transparent material sample wafer in x, y and z directions; and the visual positioning system is used for identifying and positioning the transparent material sample. On the premise that the slicing quality is guaranteed, the processing efficiency is remarkably improved.

The invention discloses double-laser machining equipment and method for tool machining. The double-laser machining equipment comprises a tool clamping mechanism and a gantry mounting frame which are arranged on a workbench. The cutter clamping mechanism drives the cutter to rotate; the infrared continuous laser processing head and the purple picosecond laser processing head are respectively mounted on the gantry mounting frame through a lifting mechanism, an infrared continuous laser beam emitted by the infrared continuous laser acts on the cutter through the infrared continuous laser processing head, and a purple picosecond laser beam emitted by the purple picosecond laser acts on the cutter through the purple picosecond laser processing head; the cutter clamping mechanism, the lifting mechanism, the infrared continuous laser, the infrared continuous laser machining head, the purple picosecond laser and the purple picosecond laser machining head are all electrically connected with the controller. The infrared continuous laser and the purple picosecond laser are integrated in the same equipment, the cutter is modified through double-laser cooperation, dynamic adjustment of laser parameters is achieved in combination with the lifting mechanism and the controller, the heat influence is effectively reduced, and the machining quality stability is improved.

The utility model discloses a precise picosecond laser film cutting machine, which relates to the technical field of semiconductor processing equipment, and comprises an X-axis linear module extending along the horizontal direction; the Z-axis linear module is in sliding connection with the X-axis linear module; the laser galvanometer is fixedly mounted at the moving end of the Z-axis linear module; the CCD camera is fixedly mounted at the moving end of the Z-axis linear module and is adjacent to the laser galvanometer; the ultraviolet picosecond laser is aligned with the light path of the laser galvanometer; the Y-axis linear module is perpendicular to the plane where the X-axis linear module and the Z-axis linear module are located; and the product jig workbench is fixedly arranged at the moving end of the Y-axis linear module. Accurate space positioning of the laser head and the jig workbench is achieved, flexibility and accuracy in the cutting process are guaranteed, cutting errors caused by deviation of product placement are avoided, meanwhile, damage to materials below is avoided, the requirement for clean production is met, and labor cost is reduced.

This invention relates to a processing method for high thermal conductivity polycrystalline silicon carbide wafers, comprising the following steps: grinding and thinning a CVD-prepared polycrystalline silicon carbide wafer to obtain a pre-treated wafer; performing a full-coverage ablation treatment on the surface of the pre-treated wafer using a picosecond laser to form a modified wafer with an amorphous surface modification layer; and polishing and cleaning the modified wafer to obtain the finished wafer. This method introduces a picosecond laser into the CMP front-end for laser ablation and surface modification of the polycrystalline SiC wafer, followed by rough and fine polishing using CMP. The results show that CMP time is reduced by more than 40%, significantly improving CMP efficiency and reducing costs, while ultimately achieving a surface roughness of 0.2 nm, meeting the requirements of sub-nanometer roughness and no subsurface damage.

The invention discloses a picosecond laser lateral thinning process for manufacturing an ultrathin silicon-based nerve probe, and belongs to the technical field of implantable nerve electrode arrays. The process comprises the following steps: firstly, providing a silicon-based nerve probe matrix prepared by an MEMS process; transversely fixing the target thinned profile, and planning a laser scanning path based on the target thinned profile; a picosecond laser is adopted, lateral thinning is carried out on the target area of the probe through optimized technological parameters, and finally the thickness of the implantation area of the probe is thinned to 10-100 micrometers. According to the method, a maskless cold ablation process is adopted, the problems of complex steps and thermal stress of a traditional etching technology are avoided, high-precision and controllable processing of the thickness of the probe is achieved, the neural probe with a stepped thickness structure can be prepared, implantation damage can be remarkably reduced, and improvement of the quality and stability of long-term neural signal recording is facilitated.

The invention discloses a processing method for a copper-clad ceramic substrate, which relates to the technical field of copper-clad ceramic substrate processing, and comprises the following steps of: taking a pre-treated copper-clad ceramic substrate, introducing nitrogen, and carrying out layered progressive micropore processing on an exposed aluminum oxide ceramic substrate of the pre-treated copper-clad ceramic substrate through picosecond laser to form micropores; each micropore is divided into an inlet layer, a middle layer and an outlet layer from top to bottom; the layer number of the micropores, the thickness of each layer of the micropores and the pulse width are controlled, and a light spot and long-focal-depth lens is adopted; adjusting monopulse energy and frequency parameters of picosecond laser, and punching an inlet layer; adjusting monopulse energy and frequency parameters of picosecond laser, and punching the middle layer; and adjusting monopulse energy and frequency parameters of the picosecond laser, and punching the outlet layer to obtain the copper-clad ceramic substrate. In the middle layer, the monopulse energy is gradually increased, and it is ensured that the material is evenly removed; at the inlet layer and the outlet layer, energy is reduced, and cracks caused by stress generated instantly when the material is punctured are avoided.

The application discloses a kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation and preparation method and application, belong to semiconductor optoelectronic material technical field;A kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation preparation method, comprising the following steps: using vacuum deposition process is deposited Se doped film on the surface of silicon substrate, then by picosecond laser scanning preparation obtains the micro-nano composite structure black silicon;Sulfur ion implantation modification is carried out to the micro-nano composite structure black silicon, annealing, and the S, Se co-doped silicon-based near-infrared photosensitive material is prepared.The application is successfully solved the problem of thermal damage and lattice defect in traditional doping method by the composite doping process of picosecond laser-ion implantation, realizes the preparation of S, Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defect.The light absorption rate of the material at 1300nm band is significantly improved, which provides a mass production process scheme for the third generation photovoltaic device and high-performance infrared detector, and has important application value and broad market prospect.

The invention discloses a processing method for improving picosecond cutting board warping of an FPCOIL product, which comprises the following steps that a circuit board containing the product and a laser carrier capable of containing the circuit board are provided, and the laser carrier comprises a lower jig and an upper jig; the lower jig is placed on a working table; the circuit board is placed in the lower jig, and then the upper jig is placed at the upper end of the lower jig; the working table board adsorbs a circuit board through a lower jig, and a plurality of exhaust holes are formed in the lower jig; and cutting the circuit board by using a picosecond laser. The structure that the lower jig and the upper jig are fixed in a magnetic attraction mode is adopted for improving warping of a product board, the lower jig is placed on the working table, the whole circuit board is placed in the lower jig, a plurality of exhaust holes distributed in the periphery of the product are formed in the lower jig, effective attraction of the working table to the circuit board is facilitated, and the follow-up laser cutting precision is improved; and the upper jig is pressed on the edge area of the circuit board, so that the warping of the product can be improved.

1. Name of the product in this design: Picosecond laser therapy device. 2. Purpose of this product design: to improve problems such as blemishes, uneven skin tone, acne scars, and fine lines. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The invention discloses a TBC battery and a preparation method thereof, and belongs to the technical field of solar photovoltaic batteries. The preparation method comprises the following steps: depositing a tunneling layer and a polycrystalline silicon layer on the back surface of an alkali-polished N-type silicon-based substrate; carrying out boron doping and high-temperature oxidation to form a borosilicate glass layer; performing laser etching to form a P-type doped region and an etching region; carrying out alkali washing on the etching region, and depositing a tunneling oxide layer and a phosphorus-doped N-type doping layer; performing crystallization treatment; borosilicate glass layer cleaning is carried out on the P-type doped region, winding plating is carried out on the front surface, and alkali texturing is completed; and depositing an AlOx layer and a SiNx layer on the back surface and the front surface of the product. According to the method, the technological process is simple, compared with the mode that a PVD precise direction coating mode is adopted in the market to achieve isolation of the PN area, one picosecond laser etching procedure can be omitted, the equipment investment can be obviously reduced, the production efficiency can be improved, and the TOPCon technology of an existing PVD route can be upgraded to the TBC technology.

The application discloses a kind of trench wall body type sulfur positive electrode materials and preparation method thereof, it is related to electrode material technical field.The application uses reduced graphene oxide aerogel as the carrier of active component sulfur, based on picosecond laser processing technology, trench is prepared on its surface, a kind of trench wall body type sulfur positive electrode material is obtained, unique layered pore wall structure can be realized in the electrode, can play greater inhibitory effect to lithium-sulfur battery polysulfide shuttle effect, and active substance in wall bottom can also be immersed into trench with electrolyte and realize full utilization.The positive electrode material prepared based on picosecond laser processing technology has the characteristics of excellent use performance and high stability.

The invention discloses a dodging sheet with a deflection angle and a preparation method of the dodging sheet, and belongs to the technical field of optical microstructure manufacturing. The dodging sheet comprises a transparent base material and a deflection free-form surface microstructure array which is arranged on the transparent base material in an out-of-order mode, the related length of a microstructure is 30-60 micrometers, the height is 5-20 micrometers, and the deflection angle is 0-45 degrees and can be continuously adjusted. According to the preparation method, an integrated process of SLM phase shaping, laser-induced modification and selective chemical etching is adopted, composite phase design is carried out through a spatial light modulator, an inclined free-form surface modification domain is formed in a base material in combination with femtosecond / picosecond laser, and then a target microstructure is obtained through chemical etching. According to the invention, the high optical performance of improved dodging uniformity and high transmittance is realized, and meanwhile, the method has the advantages of simplified process, flexible design and low cost, and is suitable for a high-end optical system.

1. The name of the design product: multi-path picosecond laser shell. 2. The use of the design product: used for assembling the shell of multi-path picosecond laser transmitter. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

The application discloses a device and method for generating 193nm waveband ultraviolet laser, which comprises a near-infrared laser driving unit 1, a nonlinear frequency conversion system 2 and an ultraviolet laser generating system 3 connected in sequence. The near-infrared laser driving unit is a high-power picosecond laser for generating near-infrared laser with a wavelength of 1064nm. The near-infrared laser is divided into two parts by a beam splitter, one part of which is used as pump light of a first optical parametric oscillator (OPO1) and generates 840nm laser, and the 840nm laser is converted into 210nm laser through four frequency doubling; the other part is directly used as pump light of a second optical parametric oscillator (OPO2) and generates 2380nm laser. In the last ultraviolet laser generating system, the 210nm laser and the 2380nm laser are combined through sum frequency mixing to finally realize the output of 193nm waveband ultraviolet laser. The application provides a new idea and technical route for the development of vacuum ultraviolet 193nm waveband solid-state laser by using mature nonlinear crystal and nonlinear frequency conversion process.

The utility model discloses double-beam infrared picosecond laser non-standard micro-nano machining equipment which comprises an infrared picosecond laser micro-nano equipment body, a high-precision linear module is arranged on the top face of the infrared picosecond laser micro-nano equipment body, and operation panels are arranged on the two sides of a high-precision linear module platform respectively. The clamping assembly is arranged on the top faces of the operation plates and used for clamping a machined workpiece, the clamping assembly comprises two swing columns, and the two swing columns are arranged on the top faces of the two operation plates correspondingly; according to the infrared picosecond laser micro-nano equipment, the arranged infrared picosecond laser micro-nano equipment body, the high-precision linear module, the operation plate, the swing column, the clamping head, the clamping groove, the operation column, the supporting frame and the rotating column are used in cooperation, a trapezoidal table can abut against the lower portion of the swing column, and therefore the clamping head can press and clamp a workpiece, machining workpieces of various sizes and various shapes can be clamped, and the machining efficiency is improved. When a circular workpiece is clamped, the circular workpiece enters the clamping groove, and the circular workpiece can be clamped.

The invention relates to the technical field of graphene, in particular to a low-sheet-resistance and high-conductivity graphene film and a preparation method thereof.The preparation method comprises the following steps that A, a polyimide film is pasted to the surface of an insulating substrate, and a polyimide-substrate complex is obtained after cleaning; b, performing focused scanning processing on the polyimide film on the surface of the polyimide-substrate complex by adopting purple picosecond laser to obtain an amorphous carbon-substrate complex; c, performing out-of-focus scanning processing on the amorphous carbon film on the surface of the amorphous carbon-substrate complex by adopting near-infrared laser to obtain a graphene-substrate complex; and D, scanning the back surface of the graphene-substrate complex by adopting purple picosecond laser to obtain the graphene film with low sheet resistance and high conductivity. According to the low-sheet-resistance and high-conductivity graphene film and the preparation method thereof, the prepared graphene film has low sheet resistance and high conductivity, so that the defects in the prior art are overcome.

The application discloses a kind of corrosion-resistant alloy steel van body and preparation method, belong to van body technical field, first by to van body blank is carried out normalizing, quenching, tempering treatment after obtaining van body semi-finished product, again to van body semi-finished product is sequentially using picosecond laser and nanometer laser and is etched, after anodic oxidation treatment form porous and uniform oxide layer, by laser cladding method uniform vanadium carbide, titanium carbide coating is formed on surface, the porous structure of oxide film can improve the adhesion of subsequent coating, form oxide film plus coating composite protection system, increase the corrosion resistance of corrosion-resistant alloy steel van body, prolong the service life of corrosion-resistant alloy steel van body in slurry pump.

The utility model relates to the technical field of laser processing, in particular to a picosecond laser micropore processing positioning device which comprises a base, two sliding grooves are formed in the base, and two containing grooves are formed in the upper end of the base. Notches are formed in the upper ends of the movable plates, movable rods are slidably connected into the notches, electromagnets are fixedly connected to the bottoms in the notches, permanent magnets are fixedly connected into the lower ends of the movable rods, the electromagnets are matched with the permanent magnets, and clamping plates are fixedly connected to the upper ends of the movable rods; the clamping plate is in sliding connection with the storage groove; the device comprises an annular plate, the upper end of the annular plate is fixedly connected with a support, a groove is formed in the top in the support, a movable block is slidably connected to the interior of the groove, and a laser head is fixedly connected to the interior of the movable block in a penetrating mode. And the clamping plates cannot protrude out of the surface of the base in the storage state, so that the risk that operators are accidentally collided or injured by clamping is reduced, and the safety of a working place is improved.

The invention discloses a laser amplifier and a method for avoiding thermal depolarization of a side pump. According to an exemplary embodiment, a laser amplifier comprises: a vector polarization conversion device for converting linearly polarized light into light in a single vector polarization state; and a side pump module for amplifying the light incident on the side pump module. According to the technical scheme provided by the invention, only one vector polarization component exists in the module through the polarization conversion device, and thermal depolarization does not occur in single radial or angular vector polarization under cylindrical symmetric anisotropic refractive index distribution, so that thermal depolarization does not occur no matter whether a light beam passes through a crystal rod for one time or multiple times, and therefore, the reliability of the module is improved. Therefore, the influence of the thermal depolarization effect of the side pump module on the polarization state of the light beam is reduced, and the amplification quality of the high-energy picosecond laser and the stability of an amplification system are improved.

The invention discloses a laser composite polishing method and system for a gradient composite superhard material cutter cutting edge, and belongs to the technical field of laser precision machining. The polishing method adopts a composite energy strategy of'mid-infrared preheating softening 'and'purple picosecond precision cutting'. Firstly, a cutting edge is preheated through intermediate infrared continuous laser scanning, and the brittleness of materials is reduced; and performing synchronous or alternate precise scanning on the preheating area by using purple picosecond laser to remove the nanoscale material. The system integrates the multi-axis motion platform, the double-laser coupling module, the online monitoring module and the self-adaptive control unit, and closed-loop machining is achieved. According to the polishing method, heat damage is effectively avoided, the polishing efficiency is greatly improved, the cutting performance of the cutter is greatly improved, and the service life is greatly prolonged.

The invention discloses a gallium arsenide solar cell top electrode and a preparation method thereof, an Au-free electrode is prepared by combining magnetron sputtering, laser processing and electroplating processes, during preparation, a forward single-junction or multi-junction epitaxial layer is grown on a germanium substrate, and a Ti-Ni-Ag or Ti-Pd-Ag seed layer is subjected to magnetron sputtering after cleaning; then, femtosecond or picosecond laser is used for removing the seed layer in a non-electrode area according to a grid line diagram, and the laser depth is controlled when one layer of rotary battery is removed in the machining process; and finally, copper or silver is electroplated to thicken the electrode to 3-10 microns, and preparation is completed through organic solderability preservative treatment. According to the method, a low-price metal system is selected to replace a photoetching and electron beam vacuum evaporation process, so that the process steps and the processing time are reduced, the method has the advantages of low material cost, automation and high production efficiency, and the preparation cost of the arsenide solar cell is reduced.

The invention relates to a picosecond laser vision self-adaptive intelligent cutting method for an OLED screen body, and the method comprises the steps: obtaining the surface image data of a to-be-cut OLED screen body in real time, and recognizing the actual contour features and position; generating a self-adaptive cutting path matched with the individual features of the OLED screen body in combination with a preset target cutting graph and the recognized actual contour features and positions; according to the self-adaptive cutting path, a picosecond laser cutting head is driven to conduct positioning, and a picosecond laser is started to generate an ultra-short pulse laser beam; and laser cutting operation is carried out on the OLED screen body along the self-adaptive cutting path, so that the purpose of improving the cutting precision, quality and adaptability of the special-shaped screen is achieved.

This invention discloses a multi-degree-of-freedom picosecond laser cutting machine and its control method, relating to the field of picosecond laser glass cutting. The device includes a cutting machine housing, two-axis drive components, and a picosecond laser generator. A beam splitting mechanism is located at the bottom of the picosecond laser generator, and three motorized zoom lenses are mounted at the bottom of the beam splitting mechanism. This allows the laser to be split into beam paths equal to the number of motorized zoom lenses. By adjusting the focal length, the three motorized zoom lenses focus the laser at different depths within the glass to form a large-depth modification zone. In straight sections, the motorized zoom lenses are arranged linearly. In arc sections, the position of the motorized zoom lenses on both sides is adjusted by the beam splitting mechanism, allowing the three motorized zoom lenses to pass through the arc position sequentially or synchronously in a preset posture, creating a modification zone connected to the straight-line cut. This results in higher precision and better edge quality of the cut product.

The invention discloses a laser processing quality prediction method based on an improved starfish optimization algorithm, and relates to the technical field of neural network models. Comprising the following steps: firstly, improving a starfish optimization algorithm based on a Levy flight principle to obtain an improved starfish optimization algorithm; optimizing the weight and bias of the back-propagation neural network based on an improved starfish algorithm, and inhibiting the over-fitting of the back-propagation neural network based on an L1 regularization method to obtain a target back-propagation neural network; then, technological parameters of silicon carbide laser processing are obtained; and finally, inputting the process parameters into a pre-trained target back propagation neural network to obtain processing quality parameters of silicon carbide laser processing. The starfish optimization algorithm is improved by introducing the Levy flight principle, and high-precision prediction of the silicon carbide picosecond laser processing quality is achieved.

The application relates to a picosecond laser with high beam quality, comprising: a pump source for providing pump energy to an amplification crystal; a laser oscillator for providing high-beam-quality signal light to the amplification crystal; the amplification crystal for realizing amplification of signal light power; a pump light shaping system, which comprises a first lens group formed by a first plano-convex lens and a second plano-convex lens and a third plano-convex lens arranged at intervals with the first lens group, the pump light is subjected to quasi-collimation processing through the first lens group, and then is focused through the third plano-convex lens arranged at intervals, so that the Rayleigh length of the focused pump light completely falls in the amplification crystal; and a signal light shaping system, which comprises a fourth plano-convex lens arranged on the upstream of the light path of the amplification crystal and a second lens group formed by a fifth plano-convex lens and a first plano-concave lens, the signal light is focused through the fourth plano-convex lens, and then is subjected to expansion collimation through the second lens group, so that the Rayleigh length of the signal light completely falls in the amplification crystal, the pump light and the signal light are in a uniformly distributed state in the amplification crystal, the amplification crystal generates uniform heat distribution, the thermal lens effect is eliminated, the occurrence probability of the thermal birefringence effect and the thermal distortion effect is reduced, and the amplification efficiency of the light beam and the quality of the output light beam are greatly improved.

Disclosed is a facility (6) for stripping a moving metal product (3), comprising: - a stripping assembly (8) having at least one picosecond pulse laser device (10), each configured to emit picosecond laser pulses onto the surface of the moving metal product (3) in order to strip it, - a control unit (12) suitable for acquiring information relating to the moving metal product (3) and configured to: - determine operating parameters to be applied to the stripping assembly (8) in order to achieve stripping of the oxide layer on the surface of the metal product (3) by emission, by each laser device (10), of picosecond laser pulses onto the metal product (3) surface, - apply these operating parameters to the stripping assembly (8) in order to strip the surface of the metal product (3).

The invention belongs to the technical field of battery diaphragms, and particularly relates to an MOFs (Metal-Organic Frameworks) doped lithium-sulfur battery diaphragm as well as a preparation method and application thereof. The MOFs-doped lithium-sulfur battery diaphragm provided by the invention comprises a Ketjen black conductive layer, a middle substrate layer and a ZIF-8 functional layer, the middle substrate layer and the ZIF-8 functional layer are fused at an interface to form a transition layer; the Ketjen black conductive layer is provided with dot matrix hole channels which are vertically arranged; and the middle substrate layer comprises a PAN nanofiber membrane. According to the invention, by adopting a picosecond laser surface processing technology, an electrostatic spinning flame-retardant diaphragm material with high ion passing rate, high area attachment sites and high stability is integrally constructed on the surface of the diaphragm, and the double problems of the existing diaphragm in structure and preparation process are solved. The diaphragm has excellent flame retardance and structural stability at the same time, the specific capacity, safety and cycle life of the battery are synergistically improved from the aspects of material design and preparation process, and the commercialization process of the high-performance diaphragm is powerfully promoted.

The invention relates to the technical field of glass processing, and discloses an optical fiber transmission infrared picosecond laser glass cutting machine which comprises a working table made of marble, a stand column is movably arranged above the working table, a top plate is fixedly connected to the top of the stand column, a positioning assembly is arranged in the top plate, and a sliding seat is slidably connected to the outer wall of the top plate; electric push rods are fixedly connected to the outer walls of the sliding seats, lifting seats are fixedly connected to the output ends of the electric push rods, and connecting plates are fixedly connected to the outer walls of the lifting seats. The working table made of marble is adopted, the lifting base, the adjusting assembly and the multi-gear speed adjusting function are matched in an optical fiber infrared picosecond laser cutting system, high-precision positioning of a laser focus and flexible adjusting of the cutting speed are achieved, laser beam energy is concentrated and stable, and the cutting efficiency is improved. And the problems of edge breakage, cracks and overlarge heat affected zone easily occurring in traditional mechanical cutting and carbon dioxide laser cutting of the glass are obviously reduced, so that the cutting quality and the yield are effectively improved.

The invention relates to a large depth-diameter ratio straight-through hole machining process for a tungsten carbide wedge-shaped chopper, which specifically comprises the following steps of: preparing a blank by sequentially adopting the processes of vacuum powder mixing, cold isostatic pressing and vacuum sintering; synchronously spraying electrolyte to a machining area while machining by adopting a red picosecond laser; detecting deflection data of the through hole by utilizing microscopic CT (Computed Tomography) equipment, and performing fixed-point laser correction on a deflection area by adopting low-power laser according to the detection data; polishing the inner wall of the through hole by adopting an electrolytic machining mode; carrying out honing and finishing on residual tiny scratches on the inner wall of the through hole by adopting a diamond micro-wire honing head; and detecting a finished product. According to the method, synchronous composite rough machining is carried out through cooperation of the infrared picosecond laser and the electrolyte, machining and deslagging are synchronous, the problem of deep hole melt blockage is solved fundamentally, and the depth-diameter ratio is gt; and the ultra-large depth-diameter ratio micropores of 100 are efficiently and stably formed.