151 results about "Picosecond laser" patented technology

The invention discloses a non-consistency multi-focus unit modification system for laser slicing of transparent materials. The non-consistency multi-focus unit modification system comprises an ultra-short pulse laser, a light beam regulation and control system, a light beam shaping system, a focusing objective lens, a visual positioning system and a high-precision three-dimensional motion platform, a transparent material sample wafer to be sliced is placed on the high-precision three-dimensional motion platform; the ultrashort pulse laser provides picosecond laser beams for the whole system, the laser beams generated by the ultrashort pulse laser are transmitted to the light beam shaping system through the light beam regulation and control system to generate multiple inconsistent laser beams, and the multiple inconsistent laser beams are focused and shrunk through the focusing objective lens to obtain multiple inconsistent focuses. The focus is focused in a transparent material sample wafer on a high-precision three-dimensional motion platform for slicing; wherein the high-precision three-dimensional motion platform realizes the movement of a transparent material sample wafer in x, y and z directions; and the visual positioning system is used for identifying and positioning the transparent material sample. On the premise that the slicing quality is guaranteed, the processing efficiency is remarkably improved.

The invention provides a femtosecond and picosecond composite laser welding method and equipment for heterogeneous materials. The femtosecond and picosecond composite laser welding method specifically comprises the steps that glass and metal are stacked on a three-dimensional motion platform and clamped through a clamp; femtosecond laser (with the pulse width of 50-1000 fs and the peak power density of 10-10 W / cm) and picosecond laser (with the pulse width of 1-200 ps and the peak power density of 10-10 W / cm) are adjusted by different beam expanding systems, and after focusing, picosecond light spots completely wrap femtosecond light spots; the composite laser acts on a welding area and a femtosecond laser focusing interface in a time-space synchronization mode, plasma is excited to enable metal to be melted to fill gaps, picosecond laser forms a wide-area heating field on the femtosecond periphery, a violent temperature gradient is regulated and controlled to be in a gentle state, the preheating and after-heating effects are achieved, cracks are restrained, absorption is enhanced, and the welding strength is improved; and the composite laser is controlled by a control system to weld according to a specified path, so that high-strength connection of the glass / metal heterogeneous materials is realized. And the method becomes a breaking key for regulating and controlling the temperature gradient, inhibiting crack generation and improving the welding strength.

The utility model relates to a picosecond laser forming pelleter, which is characterized in that an unwinding mechanism is mounted on one side of a slitting mechanism, a reinforcing mechanism is mounted on one side of the slitting mechanism, a belt conveying mechanism is mounted on one side of the reinforcing mechanism, and a cutting mechanism, a detection mechanism, a dust removal mechanism and a knockout mechanism are mounted on one side of the belt conveying mechanism; according to the picosecond laser forming piece making machine, the unwinding mechanism unwinds the pole piece material belt, the slitting mechanism cuts off the bottom edge of the pole piece material belt and collects bottom edge waste, the reinforcing mechanism reinforces the tab area of the pole piece so as to prevent the tab from being folded, and the cutting mechanism cuts the pole piece material belt to form the pole piece. The belt conveying mechanism sequentially conveys the cut pole pieces to pass through the detection mechanism, the dust removal mechanism and the knockout mechanism, the detection mechanism performs size and flaw detection on the pole pieces, the dust removal mechanism performs dust removal on the two end faces of the pole pieces, and the knockout mechanism performs classified collection on the pole pieces according to detection results of the detection mechanism.

The invention discloses double-laser machining equipment and method for tool machining. The double-laser machining equipment comprises a tool clamping mechanism and a gantry mounting frame which are arranged on a workbench. The cutter clamping mechanism drives the cutter to rotate; the infrared continuous laser processing head and the purple picosecond laser processing head are respectively mounted on the gantry mounting frame through a lifting mechanism, an infrared continuous laser beam emitted by the infrared continuous laser acts on the cutter through the infrared continuous laser processing head, and a purple picosecond laser beam emitted by the purple picosecond laser acts on the cutter through the purple picosecond laser processing head; the cutter clamping mechanism, the lifting mechanism, the infrared continuous laser, the infrared continuous laser machining head, the purple picosecond laser and the purple picosecond laser machining head are all electrically connected with the controller. The infrared continuous laser and the purple picosecond laser are integrated in the same equipment, the cutter is modified through double-laser cooperation, dynamic adjustment of laser parameters is achieved in combination with the lifting mechanism and the controller, the heat influence is effectively reduced, and the machining quality stability is improved.

The invention provides a preparation method of a back contact heterojunction solar cell. The method comprises the following steps of: after polishing and cleaning two surfaces of a silicon wafer, sequentially depositing a passivation layer i, a doping layer n, a silicon nitride isolation layer and a sacrificial layer on the back surface; the sacrificial layer pattern is etched through picosecond laser, and the doping layer n layer is exposed through HF acid corrosion; synchronously etching a passivation layer i and a doping layer n in a back opening region by adopting alkali liquor, and performing front texturing; a passivation layer i and a doping layer p are secondarily deposited on the back surface, a doping layer n is secondarily exposed through HF acid after a P region pattern is etched through laser, a passivation layer i and an anti-reflection layer are deposited on the front surface, a TCO transparent conductive layer is deposited on the back surface, a P / N region electrode is subjected to silk-screen printing and light injection curing, and finally a P / N region is isolated through laser. According to the method, the rear texturing process is combined with the laser and wet etching, so that the front film layer is prevented from being corroded by the wet method, the process is simplified, the cost is reduced, and high-efficiency and low-damage industrial mass production is realized.

The invention relates to the technical field of laser drilling, in particular to a multiband laser time-sharing machining system for a large-length-diameter-ratio deep hole in a superhard and brittle material, which comprises a shell, and a picosecond laser, a femtosecond laser, two field lenses, a dichroic mirror, a beam shaping device and a laser head which are arranged in the shell, and a heat dissipation device is arranged at the bottom end of the beam shaping device in the shell. A multi-stage chip removal device is installed at the end of the laser head, and the picosecond laser and the femtosecond laser are combined through a dichroic mirror and share the same light beam shaping device. The femtosecond laser device and the picosecond laser device are integrated, lasers of different wave bands are emitted in a time-sharing mode, and efficient and high-precision machining of the large-length-diameter-ratio deep hole of the super-hard and brittle material is achieved. Meanwhile, the multi-stage chip removal device cleans fines generated by machining in time in an air blowing and negative pressure suction mode, and the machining quality is guaranteed.

The invention belongs to the technical field of reflectors, and particularly discloses a reflector preparation method based on micro-channel heat dissipation, and the method comprises the steps: obtaining a first mirror body and a second mirror body, and plating a reflecting film on one side of the first mirror body and one side of the second mirror body; the method comprises the following steps: performing micro-fluidic groove parameterization design according to three-dimensional data of a lens body, establishing an optimization model which only takes geometric parameters as independent variables, outputting performance evaluation indexes through coupling heat transfer-fluid-structure simulation, and performing iterative updating on the geometric parameters based on an evaluation result; processing parameters are generated, a micro-flow groove is formed through picosecond laser etching, and the groove wall is polished through femtosecond laser; deionized water washing, cerium oxide grinding, sodium bicarbonate cleaning and secondary washing are sequentially carried out; and bonding the two mirror bodies into a mirror surface. According to the method, under the condition that processing, tolerance and operation boundary constraints are met, comprehensive optimization of low temperature rise, low surface shape change and low pressure drop of the mirror surface is achieved, and the optical stability and reliability under high-power application are improved.

The invention provides a method for improving titanium alloy picosecond laser drilling quality, which belongs to the technical field of laser processing, and comprises the following steps: S1, pretreating a titanium alloy material to be processed and tested, and fixing the titanium alloy material on a workbench; s2, a machining position is positioned, and laser parameters and paths required by machining are set; and S3, a common scanning number value is set, and machining is started. And S4, observing the small hole opening condition, if the small hole is opened, reducing the scanning times, and if the small hole is not opened, otherwise. And repeatedly processing and adjusting. And S5, a new titanium alloy material is replaced, the formal machining position is positioned, and laser parameters and the number of scanning times for just getting through are set. By means of the method, the proper scanning frequency is determined, energy absorbed by the material can just meet the punching requirement, excessive accumulation of the energy is avoided, and therefore splash is reduced, and the thickness of an accumulation layer is reduced.

The utility model discloses a precise picosecond laser film cutting machine, which relates to the technical field of semiconductor processing equipment, and comprises an X-axis linear module extending along the horizontal direction; the Z-axis linear module is in sliding connection with the X-axis linear module; the laser galvanometer is fixedly mounted at the moving end of the Z-axis linear module; the CCD camera is fixedly mounted at the moving end of the Z-axis linear module and is adjacent to the laser galvanometer; the ultraviolet picosecond laser is aligned with the light path of the laser galvanometer; the Y-axis linear module is perpendicular to the plane where the X-axis linear module and the Z-axis linear module are located; and the product jig workbench is fixedly arranged at the moving end of the Y-axis linear module. Accurate space positioning of the laser head and the jig workbench is achieved, flexibility and accuracy in the cutting process are guaranteed, cutting errors caused by deviation of product placement are avoided, meanwhile, damage to materials below is avoided, the requirement for clean production is met, and labor cost is reduced.

To develop a method for engraving and texturing an enamel capable of overcoming drawbacks of enamel engraving which is not widely used since it requires a mastery of the engraving technique to avoid scratching an enamel surface or altering its color.SOLUTION: A method for engraving and texturing an item (1) including a decoration (2) filled at least partially with an enamel (3) includes a step of laser ablation using a femtosecond laser or a picosecond laser onto a surface of the enamel (3) and / or within the enamel (3) to form a structure (7).SELECTED DRAWING: Figure 4A-4C

This invention relates to a processing method for high thermal conductivity polycrystalline silicon carbide wafers, comprising the following steps: grinding and thinning a CVD-prepared polycrystalline silicon carbide wafer to obtain a pre-treated wafer; performing a full-coverage ablation treatment on the surface of the pre-treated wafer using a picosecond laser to form a modified wafer with an amorphous surface modification layer; and polishing and cleaning the modified wafer to obtain the finished wafer. This method introduces a picosecond laser into the CMP front-end for laser ablation and surface modification of the polycrystalline SiC wafer, followed by rough and fine polishing using CMP. The results show that CMP time is reduced by more than 40%, significantly improving CMP efficiency and reducing costs, while ultimately achieving a surface roughness of 0.2 nm, meeting the requirements of sub-nanometer roughness and no subsurface damage.

The invention discloses a picosecond laser lateral thinning process for manufacturing an ultrathin silicon-based nerve probe, and belongs to the technical field of implantable nerve electrode arrays. The process comprises the following steps: firstly, providing a silicon-based nerve probe matrix prepared by an MEMS process; transversely fixing the target thinned profile, and planning a laser scanning path based on the target thinned profile; a picosecond laser is adopted, lateral thinning is carried out on the target area of the probe through optimized technological parameters, and finally the thickness of the implantation area of the probe is thinned to 10-100 micrometers. According to the method, a maskless cold ablation process is adopted, the problems of complex steps and thermal stress of a traditional etching technology are avoided, high-precision and controllable processing of the thickness of the probe is achieved, the neural probe with a stepped thickness structure can be prepared, implantation damage can be remarkably reduced, and improvement of the quality and stability of long-term neural signal recording is facilitated.

The invention discloses a processing method for a copper-clad ceramic substrate, which relates to the technical field of copper-clad ceramic substrate processing, and comprises the following steps of: taking a pre-treated copper-clad ceramic substrate, introducing nitrogen, and carrying out layered progressive micropore processing on an exposed aluminum oxide ceramic substrate of the pre-treated copper-clad ceramic substrate through picosecond laser to form micropores; each micropore is divided into an inlet layer, a middle layer and an outlet layer from top to bottom; the layer number of the micropores, the thickness of each layer of the micropores and the pulse width are controlled, and a light spot and long-focal-depth lens is adopted; adjusting monopulse energy and frequency parameters of picosecond laser, and punching an inlet layer; adjusting monopulse energy and frequency parameters of picosecond laser, and punching the middle layer; and adjusting monopulse energy and frequency parameters of the picosecond laser, and punching the outlet layer to obtain the copper-clad ceramic substrate. In the middle layer, the monopulse energy is gradually increased, and it is ensured that the material is evenly removed; at the inlet layer and the outlet layer, energy is reduced, and cracks caused by stress generated instantly when the material is punctured are avoided.

The invention discloses an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation and a preparation method and application thereof, and belongs to the technical field of semiconductor optoelectronic materials. A preparation method of an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation comprises the following steps: depositing an Se-doped film on the surface of a silicon substrate by adopting a vacuum deposition process, and then preparing black silicon with a micro-nano composite structure through picosecond laser scanning; and performing sulfur ion implantation modification on the black silicon with the micro-nano composite structure, and annealing to prepare the S and Se co-doped silicon-based near-infrared photosensitive material. Through a picosecond laser-ion implantation composite doping process, the problems of thermal damage and lattice defects in a traditional doping method are successfully solved, and preparation of the S and Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defects is realized. The light absorptivity of the material at the wave band of 1300nm is remarkably improved, a process scheme capable of realizing mass production is provided for third-generation photovoltaic devices and high-performance infrared detectors, and the material has important application value and wide market prospects.

The invention discloses a regional high-precision laser time-frequency transmission device, which comprises a low-jitter picosecond laser, a laser emission light path, a measurement control and processing module, a single-photon detector, a laser receiving light path, a monitoring camera, a pyramid reflector and a box body. A plurality of sets of devices can form a regional time-frequency transmission network. A clock signal is accessed to the device, the low-jitter picosecond laser outputs a laser pulse time-frequency signal under the trigger of the measurement control and processing module, the laser pulse time-frequency signal is emitted from the laser emission light path and is aimed at a far-end device through the monitoring camera, laser echoes are returned, and laser emitted by the far-end device is received to the single-photon detector through the laser receiving light path. A laser emitting light path and a laser receiving light path form local calibration through a beam splitter, the distance and the time-frequency difference of a far-end device are obtained through data processing, meanwhile, a pyramid reflector can reflect laser of the far-end device, the distance and the time-frequency difference of a local device are obtained, and therefore a regionalized free space laser time-frequency transmission network can be formed.

The application discloses a kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation and preparation method and application, belong to semiconductor optoelectronic material technical field;A kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation preparation method, comprising the following steps: using vacuum deposition process is deposited Se doped film on the surface of silicon substrate, then by picosecond laser scanning preparation obtains the micro-nano composite structure black silicon;Sulfur ion implantation modification is carried out to the micro-nano composite structure black silicon, annealing, and the S, Se co-doped silicon-based near-infrared photosensitive material is prepared.The application is successfully solved the problem of thermal damage and lattice defect in traditional doping method by the composite doping process of picosecond laser-ion implantation, realizes the preparation of S, Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defect.The light absorption rate of the material at 1300nm band is significantly improved, which provides a mass production process scheme for the third generation photovoltaic device and high-performance infrared detector, and has important application value and broad market prospect.

The invention discloses a processing method for improving picosecond cutting board warping of an FPCOIL product, which comprises the following steps that a circuit board containing the product and a laser carrier capable of containing the circuit board are provided, and the laser carrier comprises a lower jig and an upper jig; the lower jig is placed on a working table; the circuit board is placed in the lower jig, and then the upper jig is placed at the upper end of the lower jig; the working table board adsorbs a circuit board through a lower jig, and a plurality of exhaust holes are formed in the lower jig; and cutting the circuit board by using a picosecond laser. The structure that the lower jig and the upper jig are fixed in a magnetic attraction mode is adopted for improving warping of a product board, the lower jig is placed on the working table, the whole circuit board is placed in the lower jig, a plurality of exhaust holes distributed in the periphery of the product are formed in the lower jig, effective attraction of the working table to the circuit board is facilitated, and the follow-up laser cutting precision is improved; and the upper jig is pressed on the edge area of the circuit board, so that the warping of the product can be improved.

The invention provides an edge-isolated slice cell and a preparation method thereof, and belongs to the technical field of crystalline silicon solar cells. The preparation method comprises the following steps: providing a silicon substrate, forming an emitter on the surface of one side of the silicon substrate in the thickness direction, and forming a PN junction between the emitter and the silicon substrate; performing picosecond laser surface treatment on the emitting electrode, performing acid etching and alkali etching on the laser treatment part, removing the emitting electrode at the corresponding part, and changing the surface structure of the silicon substrate to form an isolation region and a buffer region; depositing a passivation layer on the surface of one side, provided with the emitter, of the silicon substrate; laser lossless cutting is carried out, and a cutting line is located in the isolation area. Through the picosecond laser surface treatment in combination with the acid etching and alkali etching processes, the emitter at the corresponding part can be accurately removed, and the surface structure of the silicon substrate can be molded, so that the carrier recombination is greatly reduced, and the battery performance is optimized.

1. Name of the product in this design: Picosecond laser therapy device. 2. Purpose of this product design: to improve problems such as blemishes, uneven skin tone, acne scars, and fine lines. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The invention discloses a method for improving the binding force of an electrolytic copper foil and a base material under low roughness and the electrolytic copper foil. The method comprises the following steps: 1) carrying out smooth acid pickling on a 9-35 [mu] m raw foil; (2) performing picosecond laser selective ablation on bulges of more than 100nm on the surface of the pickled raw foil to enable Ra to be less than or equal to 0.1 mu m; (3) depositing a compact copper layer of 0.1-0.4 mu m to fill the micro pits; 4) coarsening in a coarsening solution containing copper ions, sulfuric acid, sodium tungstate and sodium molybdate; 5) curing in a curing liquid containing copper ions, sulfuric acid, MPS, HEC, PEG and hydrolyzed collagen; (6) heat-resisting treatment and passivating treatment are conducted in sequence; 7) spraying an organic silane coupling agent; and (8) drying at 130-140 DEG C for 5-10 seconds, and then rolling at the speed of 4-6 m / min. According to the method, the formation of a high-roughness structure is avoided through laser leveling, the compact copper layer reinforces the substrate to improve the uniformity of copper nodules, the lamination surface Rz of a final product is smaller than or equal to 1.5 microns, Ra is smaller than or equal to 0.2 microns, the peel strength is larger than or equal to 0.7 N / mm, no copper powder falls off during lamination, and the method is suitable for preparing the high-precision copper foil.

The present invention discloses a method for preparing a super-hydrophobic surface and its application. The method for preparing a super-hydrophobic surface of the present invention comprises the following steps: 1) designing the style and parameters of the microstructure to be processed, and then using a picosecond laser to perform laser processing on the surface of a stainless steel substrate; 2) using fluorine-containing silane to perform surface modification treatment on the stainless steel substrate. The present invention uses a picosecond laser melting process to prepare a circular groove-shaped microstructure on the surface of a stainless steel substrate, and uses fluorine-containing silane to perform surface modification treatment to obtain a super-hydrophobic surface. The wetting characteristics of the super-hydrophobic surface can be flexibly switched by only changing the number of scans of the laser processing, and the operation is simple.

The application relates to a method for separating a diamond single crystal by laser, and relates to the technical field of diamond cutting. A modified layer is formed on the single crystal diamond by a picosecond laser, and then the single crystal diamond is separated along the modified layer by a cleaving machine. The application has the advantages of high efficiency, high product breaking resistance, no taper on the broken surface, and no ablation marks on the upper and lower surfaces.

The application relates to the technical field of heterojunction solar cells, and particularly discloses a preparation method of a selective electrode contact heterojunction cell and the heterojunction cell. The method comprises the following steps: first texturing a silicon wafer substrate, preparing a mask layer after the texturing, first patterning the silicon wafer, slotting the two surfaces of the silicon wafer based on picosecond laser, second texturing the silicon wafer, placing the cleaned silicon wafer in a second texturing mixed solution, so that a large-textured pyramid structure is generated on the bottom surface of the groove on the two surfaces of the silicon wafer, removing the first mask layer from the silicon wafer after the second texturing, and sequentially depositing a plurality of layers including an intrinsic amorphous silicon layer on the two surfaces of the silicon wafer, aligning and printing a second mask layer on other regions of the silicon wafer which are not provided with the groove in the first patterning based on exposure and development, electroplating copper grid lines on the silicon wafer, and sequentially removing the second mask layer and a copper seed layer from the silicon wafer after the electroplating of the grid lines, so as to obtain a selective electrode contact copper grid line heterojunction solar cell, thereby improving the copper grid line stripping problem and improving the cell efficiency.

The utility model discloses a picosecond laser. The picosecond laser comprises a pumping source, a laser shaping assembly, an amplification cavity and a picosecond laser seed source. The pumping source is used for emitting pumping light; the laser shaping assembly is in butt joint with the output end of the pumping source and is used for shaping the pumping light so as to form laser spots with uniform light intensity distribution on a focal plane; the amplification cavity is in butt joint with the output end of the laser shaping assembly and comprises a dichroscope and a first reflecting mirror which are oppositely arranged, and a laser gain crystal between the dichroscope and the first reflecting mirror; the shaped pump light is transmitted and focused on the laser gain crystal by the dichroscope; seed laser emitted by the picosecond laser seed source is reflected for multiple times between the dichroscope and the first reflector, and laser is output after multi-pass amplification is carried out on the seed laser through the laser gain crystal for multiple times. According to the invention, the energy distribution of the laser gain crystal is uniform, the amplification process of the seed laser in the crystal is more uniform, the laser output stability is improved, and the laser efficiency is improved.

The invention belongs to the related technical field of picosecond laser regulation and control, and discloses a picosecond optical parametric oscillator for realizing near transformation limit output and a design method thereof, the oscillator comprises a pumping source laser, an optical resonant cavity, a nonlinear crystal and a dispersion element; the pumping source laser is used for providing pulse pumping light for the optical resonant cavity; the nonlinear crystal is arranged on a light path in the optical resonant cavity and is used for converting pump light into signal light and idler frequency light, the optical resonant cavity is used for realizing oscillation of the signal light, and the dispersion element is arranged on the light path in the optical resonant cavity and is used for introducing group velocity dispersion for the signal light; signal light and idler frequency light of the near conversion limit pulse are output from the optical resonant cavity, and the dispersion amount of the dispersion element meets the near conversion limit output requirement. The optical parametric oscillator provided by the invention not only can output near-conversion limit pulses, but also has the advantages of wide wavelength tuning range, high conversion efficiency, low cost and low loss.

The invention discloses a TBC battery and a preparation method thereof, and belongs to the technical field of solar photovoltaic batteries. The preparation method comprises the following steps: depositing a tunneling layer and a polycrystalline silicon layer on the back surface of an alkali-polished N-type silicon-based substrate; carrying out boron doping and high-temperature oxidation to form a borosilicate glass layer; performing laser etching to form a P-type doped region and an etching region; carrying out alkali washing on the etching region, and depositing a tunneling oxide layer and a phosphorus-doped N-type doping layer; performing crystallization treatment; borosilicate glass layer cleaning is carried out on the P-type doped region, winding plating is carried out on the front surface, and alkali texturing is completed; and depositing an AlOx layer and a SiNx layer on the back surface and the front surface of the product. According to the method, the technological process is simple, compared with the mode that a PVD precise direction coating mode is adopted in the market to achieve isolation of the PN area, one picosecond laser etching procedure can be omitted, the equipment investment can be obviously reduced, the production efficiency can be improved, and the TOPCon technology of an existing PVD route can be upgraded to the TBC technology.

The application discloses a kind of trench wall body type sulfur positive electrode materials and preparation method thereof, it is related to electrode material technical field.The application uses reduced graphene oxide aerogel as the carrier of active component sulfur, based on picosecond laser processing technology, trench is prepared on its surface, a kind of trench wall body type sulfur positive electrode material is obtained, unique layered pore wall structure can be realized in the electrode, can play greater inhibitory effect to lithium-sulfur battery polysulfide shuttle effect, and active substance in wall bottom can also be immersed into trench with electrolyte and realize full utilization.The positive electrode material prepared based on picosecond laser processing technology has the characteristics of excellent use performance and high stability.

The invention discloses a dodging sheet with a deflection angle and a preparation method of the dodging sheet, and belongs to the technical field of optical microstructure manufacturing. The dodging sheet comprises a transparent base material and a deflection free-form surface microstructure array which is arranged on the transparent base material in an out-of-order mode, the related length of a microstructure is 30-60 micrometers, the height is 5-20 micrometers, and the deflection angle is 0-45 degrees and can be continuously adjusted. According to the preparation method, an integrated process of SLM phase shaping, laser-induced modification and selective chemical etching is adopted, composite phase design is carried out through a spatial light modulator, an inclined free-form surface modification domain is formed in a base material in combination with femtosecond / picosecond laser, and then a target microstructure is obtained through chemical etching. According to the invention, the high optical performance of improved dodging uniformity and high transmittance is realized, and meanwhile, the method has the advantages of simplified process, flexible design and low cost, and is suitable for a high-end optical system.

Apparatuses and methods are disclosed for applying laser energy having desired pulse characteristics, including a sufficiently short duration and / or a sufficiently high energy for the photomechanical treatment of skin pigmentations and pigmented lesions, both naturally-occurring (e.g., birthmarks), as well as artificial (e.g., tattoos). The laser energy may be generated with an apparatus having a resonator with the capability of switching between a modelocked pulse operating mode and an amplification operating mode. The operating modes are carried out through the application of a time-dependent bias voltage, having waveforms as described herein, to an electro-optical device positioned along the optical axis of the resonator.

The application discloses a device for high-precision laser time-frequency transmission of a region, which comprises a low-jitter picosecond laser, a laser emission light path, a measurement control and processing module, a single-photon detector, a laser receiving light path, a monitoring camera, a corner reflector and a box. A plurality of sets of the device can form a regional time-frequency transmission network. A clock signal is connected to the device, the low-jitter picosecond laser outputs a laser pulse time-frequency signal under the triggering of the measurement control and processing module, the laser pulse time-frequency signal is emitted from the laser emission light path, the monitoring camera aims at a remote device, and the laser echo returned from the remote device and the laser emitted by the remote device are received by the laser receiving light path and then the single-photon detector. The laser emission light path and the laser receiving light path form a local calibration by a beam splitter, and the distance of the remote device and the time-frequency difference are obtained through data processing. Meanwhile, the corner reflector can reflect the laser of the remote device, the distance of the local device and the time-frequency difference are obtained, and thus the regional free-space laser time-frequency transmission network can be formed.