The invention relates to the technical field of LED epitaxial wafers, in particular to an LED epitaxial
wafer, a preparation method of the LED epitaxial
wafer and an LED
chip, and the method comprises the following steps: firstly, carrying out cleaning and
hydrofluoric acid etching treatment on a
sapphire substrate, and growing a Sn-doped Li5GaO8 buffer layer through pulse
laser deposition; then growing an n-type GaN layer through a
chemical vapor deposition method, preparing a ZnGa2O4 seed layer through
pulsed laser deposition, forming an InGaN
quantum dot array through strain induced phase separation, then constructing a gradient In component
quantum well, depositing a BaTiO3 ferroelectric layer through magnetron
sputtering, and neutralizing a built-in
electric field through
electron beam polarization; and finally, growing a gradient doped p-type GaN layer by adopting a circulating annealing process, and assembling a KZnPO4
nanosheet ordered array on the surface of the gradient doped p-type GaN layer by adopting a vertical pulling technology. Therefore, the problems of poor heat dissipation, low luminous efficiency, high efficiency attenuation, short service life and the like of the LED epitaxial
wafer are solved.