Laser processing device (1) for
processing semiconductor wafers as workpieces, comprising: a first
laser mechanism (1a) comprising a first clamping table (36) for holding a first workpiece, a first X-movement means (37) for moving the first clamping table (36) in an X direction, a first Y-movement means (38) for moving the first clamping table (36) in a Y direction perpendicular to the X direction, and a first focusing means (51) for focusing a first
laser beam (LB1) on the first workpiece held on the first clamping table (36); a second
laser mechanism (1b) comprising a second clamping table (36') for holding a second workpiece, a second X-movement means (37') for moving the second clamping table in the X direction, a second Y-movement means (38') for moving the second clamping table (36') in the Y direction, and a second focusing means (51') for focusing a second laser beam (LB2) on the second workpiece held on the second clamping table (36'); a
laser oscillator for oscillating an original laser beam; an optical
system for splitting the original laser beam oscillated by the
laser oscillator and guiding the first (LB1) and second
laser beams (LB2) respectively to the first (51) and second focusing means (51'); a first control panel (202) for setting a first
processing condition for the first laser mechanism (1a); and a second control panel (205) for setting a second processing condition for the second laser mechanism (1b), wherein the first control panel (202) is attached to the
laser processing device (1) at a different position than the second control panel (205), wherein the optical
system (5) also includes a half-wave plate (53) and a
polarization beam splitter (54), the half-wave plate (53) being inserted between the
laser oscillator and the
polarization beam splitter (54), By rotating the half-wave plate in the original laser beam, the
intensity ratio between the first laser beam (LB1) as S-polarized light and the second laser beam (LB2) as P-polarized light, which are emitted by the
polarization beam splitter (54), is continuously variable, and In the optical
system, a setting agent (57) for a first
wavelength and a setting agent (61) for a second
wavelength are provided in an
optical path of the first laser beam (LB1) and the second laser beam (LB2), which have passed through a first
damper (56) and a second
damper (60).