The application relates to a
semiconductor structure preparation method and a
semiconductor structure. The
semiconductor structure preparation method forms a first anti-reflection layer to protect a first gate structure in a first area. After
etching a second area to form grooves on both sides of a second gate structure, all the first anti-reflection layer is removed, first
etching is performed to remove part of a
hard mask layer on the top of the first gate structure, second
etching is performed to remove a first insulating layer on a substrate of the first area, and part of the
hard mask layer of the first gate structure is removed. The
hard mask layer of the first gate structure is etched twice, so that the thickness of the hard
mask layer of the first gate structure removed is close to the thickness of the hard
mask layer of the second gate structure removed in the process of etching the second area to form the grooves, thereby reducing the
height difference between the first gate structure and the second gate structure, and improving the gate height load effect caused by the process
asymmetry of the second area etching to form the grooves.