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Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The need for OPC is seen mainly in the making of semiconductor devices and is due to the limitations of light to maintain the edge placement integrity of the original design, after processing, into the etched image on the silicon wafer. These projected images appear with irregularities such as line widths that are narrower or wider than designed, these are amenable to compensation by changing the pattern on the photomask used for imaging. Other distortions such as rounded corners are driven by the resolution of the optical imaging tool and are harder to compensate for. Such distortions, if not corrected for, may significantly alter the electrical properties of what was being fabricated. Optical proximity correction corrects these errors by moving edges or adding extra polygons to the pattern written on the photomask. This may be driven by pre-computed look-up tables based on width and spacing between features (known as rule based OPC) or by using compact models to dynamically simulate the final pattern and thereby drive the movement of edges, typically broken into sections, to find the best solution, (this is known as model based OPC). The objective is to reproduce on the semiconductor wafer, as well as possible, the original layout drawn by the designer.
Method for keeping consistency of auxiliary pattern during addition of auxiliary pattern and hole layer pattern
PendingCN121657354APhotomechanical exposure apparatusOriginals for photomechanical treatmentComputational physicsMechanical engineering
The invention provides a method for keeping the consistency of an auxiliary pattern when the auxiliary pattern is added and a hole layer pattern, and belongs to the field of semiconductors. The method for keeping the consistency of the auxiliary pattern during the addition of the auxiliary pattern comprises the following steps: providing a hole layer pattern; the first auxiliary pattern extends in the first direction, the second auxiliary pattern extends in the second direction, if the extended first auxiliary pattern and the extended second auxiliary pattern are overlapped, a virtual area is formed on the diagonal line of the first hole pattern and the second hole pattern, and the first direction and the second direction are perpendicular to each other; based on the length of the center line of the virtual area, the auxiliary graph parallel to the long center line is reserved. According to the method, the auxiliary pattern parallel to the long center line is reserved based on the length of the center line of the virtual area, so that the added auxiliary pattern can be kept consistent even if the pattern of the hole layer pattern rotates, and the influence on OPC (Optical Proximity Correction) is avoided.
Owner:CHONGQING XINLIAN MICROELECTRONICS CO LTD
Optical proximity correction method, device and equipment of mask pattern and storage medium
The invention relates to the technical field of semiconductor processing technologies, and discloses an optical proximity correction method, device and equipment of a mask pattern and a storage medium, and the optical proximity correction method of the mask pattern comprises the steps: carrying out the morphology prediction of a polished surface of a to-be-processed wafer, and obtaining the morphology information of the polished surface; correcting focal plane parameters in a simulation optical model according to the shape information of the polished surface; and performing optical proximity correction on the initial mask pattern by using the corrected simulation optical model to obtain a corrected mask pattern. According to the method, the shape information of the polished surface of the to-be-processed wafer is predicted, and the focal plane parameters in the simulation optical model are corrected on the basis of the shape information, so that the accuracy and reliability of optical proximity correction of the initial mask pattern based on the simulation optical model are ensured; and the processing precision of semiconductor photoetching based on the mask pattern can be improved.
Owner:HUAXINCHENG (HANGZHOU) TECH CO LTD
Automated optical proximity correction for computational lithography
PendingUS20260050207A1Originals for photomechanical treatmentMulti-objective optimisationWaferingEngineering
Systems and methods are provided for automated generation of optical proximity correction (OPC) recipes for producing photomasks for patterning semiconductor wafers, thereby improving the overall efficiency and effectiveness of computational lithography in modern semiconductor manufacturing. According to at least one embodiment, an OPC recipe is generated by a two-stage process that includes a reinforcement learning (RL) stage, for generating OPC actions for representative design patterns, and a large language model (LLM) stage, for generating an OPC recipe based on the OPC actions provided by the RL stage.
Owner:NVIDIA CORP
Establishment method, system and equipment of optical proximity correction model and storage medium
PendingCN121142888APhotomechanical exposure apparatusOriginals for photomechanical treatmentLithography processSemiconductor structure
The embodiment of the invention provides a method, a system and equipment for establishing an optical proximity correction model and a storage medium, and the method comprises the steps: providing a test layout which is provided with a first test pattern; performing correction operation on the first test pattern by using a first optical proximity correction model to generate mask pattern data of the first test pattern; obtaining a physical contour of a first type semiconductor structure formed on a physical wafer by the first test pattern when exposure operation is executed according to the mask pattern data; the physical contour is the contour of the first type semiconductor structure corresponding to the repeated region; performing photoetching process simulation on the mask pattern data by using the first optical proximity correction model to generate a prediction contour; and correcting the first optical proximity correction model according to the physical contour and the predicted contour to obtain a second optical proximity correction model. By adopting the technical scheme, the correction precision of the OPC model can be improved, and the photoetching quality is improved.
Owner:ZHEJIANG ICSPROUT SEMICONDUCTOR CO LTD
Shape sensing optical proximity effect correction method and device, storage medium and electronic equipment
ActiveCN121457407AComputer aided designSpecial data processing applicationsComputer hardwareEngineering
The invention discloses a shape perception optical proximity effect correction method and device, a storage medium and electronic equipment, and the method comprises the steps: obtaining an original design layout; performing CMP simulation on the original design layout to generate wafer morphology data; constructing a coupling optical model based on the EUV three-dimensional mask model and the wafer morphology data; performing layout decomposition on the design layout according to a multi-patterning process rule to obtain at least two mask plate patterns; a coupling optical model is adopted to carry out collaborative morphology perception optical proximity effect correction on the at least two mask plate graphs, and at least two corrected mask plate graphs are obtained; wherein when the current mask pattern is corrected, the adopted optical proximity environment comprises a historical mask correction result generated based on the coupling optical model. According to the invention, the imaging precision of advanced process nodes can be improved.
Owner:HUAXINCHENG (HANGZHOU) TECH CO LTD
Optical proximity correction method and correction device, mask, equipment and storage medium
PendingCN121165387APhotomechanical apparatusOriginals for photomechanical treatmentProcess windowTesting Methods
The invention relates to an optical proximity correction method and correction device, a mask, equipment and a storage medium. The method comprises the following steps: determining a correction limited graph from original correction graphs; wherein the correction limited pattern is a pattern which triggers edge placement error limitation, and the original correction pattern is a pattern obtained after first optical proximity correction is carried out on the photoetching design pattern; determining a to-be-corrected graph in the photoetching design graph based on the position of the correction limited graph in the original correction graph; performing second optical proximity correction on the to-be-corrected graph to obtain a target corrected graph; and processing the original correction graph based on the target correction graph to obtain a mask graph. According to the mask pattern, the influence of edge placement error limitation on the correction process can be eliminated, the correction precision of the photoetching design pattern after optical proximity correction is improved, the abnormities of narrowing, retraction and the like of the photoetching pattern are improved, the process window is improved, and the process risk is reduced.
Owner:CSMC TECH FAB2 CO LTD
Optical proximity correction method and device
ActiveCN121232545APhotomechanical exposure apparatusDesign optimisation/simulationIntegrated circuit manufacturingWafering
The invention relates to the field of integrated circuit manufacturing, in particular to an optical proximity correction method and device. Determining a target wafer grid image according to a preset grid size and the target wafer pattern; taking the target wafer pattern as a current mask pattern; inputting the current mask pattern into a pre-trained three-dimensional optical proximity correction model, and obtaining an emulational wafer grid image with the assistance of a grid size; calculating an edge height error corresponding to each edge section; judging whether the edge height error exceeds a preset adjustment threshold value or not; when the edge height error exceeds a preset adjustment threshold value, adjusting the position of each edge section in the corresponding normal direction according to the edge height error to obtain an updated current mask pattern; and the step 4 to the step 7 are cycled until the edge height error does not exceed the adjustment threshold value. According to the invention, the defects of photoresist height loss and the like are reduced, and the yield of finished products is improved.
Owner:HUAXINCHENG (HANGZHOU) TECH CO LTD
Photomask correction method and apparatus and training method of layout machine learning model
ActiveCN115373227BPhotomechanical exposure apparatusDesign optimisation/simulationPattern recognitionGraphics
The present application discloses a double pattern exposure photomask correction method, a photomask correction device and a layout machine learning model training method. The double pattern exposure photomask correction method includes the following steps. A photomask layout target image is obtained. The photomask layout target image is decomposed into two photomask layout sub-images. The photomask layout sub-images overlap in a connection area. A layout machine learning model analyzes the size of the connection area according to the photomask layout target image. The layout machine learning model is established according to a three-dimensional information after etching. An optical proximity correction program is performed on the photomask layout sub-images.
Owner:UNITED MICROELECTRONICS CORP
Method for optical proximity correction of photomask layout utilizing parameters obtained through actual photomask manufacture
A mask layout optical proximity correction (OPC) method includes determining a target pattern to be formed on a substrate, simulating a photomask layout based on the target pattern, applying a bias to the simulated photomask layout, thereby correcting the photomask layout into a first modeling layout, and selecting one of control parameters obtained through modeling using a layout of a split mask, thereby deforming the first modeling layout into a second modeling layout, and checking whether or not there is a mask rule check (MRC) violation, based on the second modeling layout.
Owner:SAMSUNG ELECTRONICS CO LTD
Photomask pattern correction method and device, electronic equipment, storage medium and program product
PendingCN121995688Aremove restrictionsimplement fixesOriginals for photomechanical treatmentComputer hardwareEngineering
The invention relates to a photomask pattern correction method and device, electronic equipment, a storage medium and a program product. The method for correcting the photomask pattern comprises the steps that an original photomask pattern is obtained, the original photomask pattern comprises a target area, and the target area is an area influencing photomask limitation; the original photomask pattern is subjected to optical proximity effect correction, a corrected photomask pattern is obtained, and in the corrected photomask pattern, the target area is a blank area not including the pattern. According to the technical scheme, on the basis of eliminating photomask limitation and enabling the contour of the photomask pattern to converge, effective correction of the photomask pattern can be realized.
Owner:CHENGDU ZIGUANG SEMICON TECH CO LTD
Machine learning-based down selection of candidate hotspot locations of circuit designs
ActiveUS12554913B2Design optimisation/simulationSpecial data processing applicationsData setHemt circuits
A method may include the steps of accessing an input data set of hotspot locations on manufactured circuits of a circuit design. The hotspot locations may be confirmed through a high precision imaging process from a set of candidate locations of the circuit design determined by a low precision imaging process. The method may further include correlating the hotspot locations to layout data for the circuit design, extracting fragment feature vectors for the hotspot locations from optical proximity correction (OPC) fragments of the layout data, processing the fragment feature vectors, providing the processed fragment feature vectors as a training set for training a machine-learning model, and applying the machine-learning model to down select a different set of candidate locations determined by the low precision imaging process.
Owner:SIEMENS INDUSTRY SOFTWARE INC
Correction method of optical proximity correction model and data acquisition method
The invention provides a correction method of an optical proximity correction model and a data acquisition method, which are applied to the technical field of semiconductors. The correction method and the data acquisition method both comprise the following steps: determining a first simulation value of a critical dimension of a test pattern set under initial information of a photoetching condition and a second simulation value of the critical dimension of the test pattern set under adjustment information of the photoetching condition; classifying the plurality of test patterns; different data acquisition modes are adopted for the classified test patterns, and the actual measurement values of the critical dimensions are recollected; through a mode of combining formula calculation and actual exposure, while the accuracy of data acquisition in the modeling process of the optical proximity effect correction model is ensured, the calculation amount of partial actual data acquisition is simplified by utilizing formula calculation, so that the purposes of reducing the labor cost and improving the modeling efficiency are achieved.
Owner:NEXCHIP SEMICON CO LTD
Optical proximity correction method and system, apparatus, and storage medium
An optical proximity correction method, system, device, and storage medium are disclosed. The method includes: acquiring a periodic region comprising multiple arrayed, periodically repeating minimum repeating units, wherein the repeating period of the minimum repeating units along the row direction is a first period, and the repeating period of the minimum repeating units along the column direction is a second period; in a layout graphic layer, adjacent main graphics with a spacing of the first period along the row direction and a spacing of the second period along the column direction are marked using color-coded markers, the color-coded markers being used to mark the main graphics split onto the same photomask; based on the splitting markers, the color-coded markers, and the number of photomask splits, the multiple main graphics in the layout graphic layer are subjected to graphic splitting processing to split the multiple main graphics into multiple photomasks. This embodiment of the invention ensures the regularity of the main graphics in the multiple photomasks after splitting and the consistency of the surrounding environment, which is beneficial for quickly replicating the graphic correction results under the same environment.
Owner:SEMICON MFG INT (SHANGHAI) CORP
Directional grouping index-based mask rule check rapid query method and device, medium, program product and terminal
The invention provides a direction grouping index-based mask rule check rapid query method and device, a medium, a program product and a terminal, and the method comprises the steps: obtaining mask pattern data after optical proximity correction, and carrying out the feature extraction of the mask pattern data, so as to obtain a feature line segment set; performing direction grouping processing on all line segments in the feature line segment set to obtain line segment subsets in different directions; adopting a bucket dividing strategy to construct a corresponding bucket dividing index structure for each line segment subset; and executing fast parallel line segment query of mask rule check based on the bucket index structure constructed by each line segment subset. By means of the direction grouping and bucket indexing technology, the indexing method for parallel line segment query optimization is provided, the efficiency of parallel line segment rule verification in MRC checking is remarkably improved, the use of a complex R-Tree structure can be avoided, memory occupation is reduced, and the indexing method is suitable for large-scale mask data of an advanced process.
Owner:HUAXINCHENG (HANGZHOU) TECH CO LTD
Method for generating optical proximity correction pattern
PendingUS20260147269A1Photomechanical apparatusOriginals for photomechanical treatmentTesting MethodsMechanical engineering
A method for generating an OPC pattern is provided. A layout pattern including a first unit pattern in an edge region and second unit patterns in a central region. A first OPC sub-pattern corresponding to the first unit pattern and the second unit patterns in an edge portion of the central region adjacent to the edge region and a second OPC sub-pattern corresponding to the second unit pattern are built. A mark covering the edge region and the edge portion is formed. The edge region is identified, and a first OPC pattern is obtained according to the first OPC sub-pattern. The central region except the edge portion is identified according to the mark, and a second OPC pattern is obtained according to the second OPC sub-pattern. The first OPC pattern and the second OPC pattern are combined to obtain an OPC pattern of the layout pattern.
Owner:UNITED MICROELECTRONICS CORP
An optical proximity correction optimization method
ActiveCN121069711BPhotomechanical exposure apparatusMicrolithography exposure apparatusAlgorithmOptical proximity correction
The application provides an optical proximity correction optimization method, comprising the following steps: providing an initial layout, dividing the initial layout into a plurality of small blocks, the small blocks comprising a main pattern area and an extension area surrounding the main pattern area, each of the small blocks overlapping with the extension area of the adjacent small blocks; performing OPC correction and simulation verification on each of the small blocks, and obtaining problem patterns and a plurality of suspected culprit patterns in the overlapping area between two adjacent small blocks in the simulation verification pattern; finding out target culprit patterns causing the problem patterns from all the suspected culprit patterns; optimizing the target culprit patterns in all the small blocks to obtain an intermediate layout; and performing OPC correction on the intermediate layout to greatly reduce the EPE at the edge of the small area, thereby solving the problem of non-converged verification result of OPC correction.
Owner:NEXCHIP SEMICON CO LTD
Method verifying process proximity correction using machine learning, and semiconductor manufacturing method using same
ActiveUS12591728B2Photomechanical apparatusOriginals for photomechanical treatmentAlgorithmSemiconductor chip
A method of manufacturing a semiconductor chip includes; generating a layout pattern, performing Process Proximity Correction (PPC) on the layout pattern to generate a PPC layout pattern, wherein the performing of PPC includes verifying the PPC layout pattern using machine learning, performing Optical Proximity Correction (OPC) on the PPC layout pattern to generate an OPC layout pattern, manufacturing a mask using the OPC layout pattern, and manufacturing a semiconductor chip using the mask.
Owner:SAMSUNG ELECTRONICS CO LTD
Metal layer pattern preprocessing method, target pattern correction method and etching method
The invention provides a metal layer graph preprocessing method, a target graph correction method and an etching method.The metal layer graph preprocessing method comprises the following steps that after sub-resolution auxiliary features are added and before optical proximity correction, a corner capable of forming a hot spot area in an original target graph is selected; a corner is replaced by an oblique line; the oblique lines are stepped, and an optimized target graph is obtained and used for OPC correction. According to the invention, the corner which can form a hot spot area before optical proximity correction is replaced by the oblique line, and then the oblique line is stepped to facilitate optical proximity correction, so that the simulated ADI contour is smoother, the light intensity distribution is more uniform, and no top loss exists under the condition of focal length offset, thereby avoiding the bridging phenomenon of the formed metal layer, and improving the optical proximity correction accuracy. And a photoetching process window is enlarged, and the performance of the metal layer is improved.
Owner:NEXCHIP SEMICON CO LTD
Optical proximity effect correction method
PendingCN121500680APhotomechanical exposure apparatusOriginals for photomechanical treatmentOptical proximity correctionOptics
The invention provides an optical proximity effect correction method, which comprises the following steps of: selecting an original layout layer comprising a target pattern layer and a hole layer, and searching an abnormal edge in the target pattern layer according to a position relationship between the target pattern layer and the hole layer; moving the abnormal edge by a first set distance in a direction perpendicular to the abnormal edge and away from the target pattern layer; moving each edge in the target pattern layer by a second set distance in a direction perpendicular to the edge and close to the target pattern layer to obtain an OPC (Optical Proximity Correction) target pattern layer; and carrying out iteration on the OPC correction target graph layer. According to the method, welt holes can be reduced, the problem of incomplete hole wrapping caused by global movement of the target pattern layer during process deviation is solved, meanwhile, the problem of incomplete hole wrapping caused when the holes are located at corners or line ends is also solved, and therefore the stability and the electrical property of products are improved.
Owner:HANGZHOU FULLSEMI SEMICON CO LTD
Optical proximity correction method and system, mask, apparatus, and storage medium
ActiveCN116560177BPhotomechanical exposure apparatusOriginals for photomechanical treatmentReference mapReference patterns
An optical proximity correction method and system, a mask, a device and a storage medium, the optical proximity correction method comprising: providing a design pattern; along the contour of the design pattern, obtaining a step edge as a broken line edge, the broken line edge being alternately composed of a plurality of first line segments extending along the extension direction of the broken line edge, and second line segments connecting adjacent first line segments; performing step elimination processing on the broken line edge of the design pattern, replacing the broken line edge with a straight line type reference edge with the same extension direction as the first line segment, and enclosing a reference pattern corresponding to the design pattern; setting a plurality of initial evaluation points on the reference edge; mapping the plurality of initial evaluation points to the broken line edge along a direction perpendicular to the reference edge to form evaluation points located on the broken line edge; performing optical proximity correction processing on the design pattern until the edge placement error at the evaluation points meets a preset condition to form a corrected pattern. The present application improves the accuracy of optical proximity correction.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
Method and system for layout enhancement based on inter-cell correlation
ActiveUS12607926B2Photomechanical exposure apparatusOriginals for photomechanical treatmentComputer hardwareHidden layer
A method includes: providing a first design layout including a plurality of cells; updating a first cell of the plurality of cells using optical proximity correction to provide a first updated cell and a data set; and updating a second cell from remaining cells in the first design layout based on the data set and a model without involvement of optical proximity correction to provide a second updated cell, wherein the model includes hidden layers including nodes and is trained to obtaining converged values of the nodes of the hidden layers through providing a mapping of edge segments before lithography enhancement and edge segments after lithography enhancement using optical proximity correction, and wherein at least one of the providing, and updating is executed by one or more processors.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Semiconductor device and method of fabricating the same
ActiveUS12639504B2Semiconductor/solid-state device testing/measurementNanoinformaticsDevice materialMaterials science
A method of fabricating a semiconductor device may include designing a layout including first and second gate patterns, first and second dummy gate patterns, and third and fourth gate patterns sequentially arranged in a first direction; forming first to fourth sacrificial patterns and first and second dummy sacrificial patterns, which correspond to the first to fourth gate patterns and the first and second dummy gate patterns respectively, on a substrate using a photomask manufactured based on the layout; and performing an optical proximity correction on the layout. The optical proximity correction may include measuring distances between adjacent ones of the sacrificial and dummy sacrificial patterns in the first direction to provide measured distances, comparing a mean value of the measured distances with a mean value of target distances to obtain a first distance therebetween, and reducing a distance between the first and second dummy gate patterns by the first distance.
Owner:SAMSUNG ELECTRONICS CO LTD
Optical proximity correction method
ActiveCN116954012BPhotomechanical exposure apparatusOriginals for photomechanical treatmentReference mapAlgorithm
An optical proximity correction method comprises: providing an initial design layout, the initial design layout having a reference pattern and a plurality of main patterns, the reference pattern having a reference edge, and each main pattern having a plurality of main edges; taking each main edge as a reference, obtaining a first search parameter to determine a first search region; when the reference edge has an overlapping part with any one of the first search regions, marking the main edge corresponding to the first search region as a candidate edge; taking the reference edge as a reference, obtaining a second search parameter according to the first search parameter to determine a second search region; and when any one of the candidate edges has an overlapping part with the second search region, marking the candidate edge as a selected edge. The bidirectional edge selection mechanism of the first search region and the second search region is used for edge selection operation, the cases of multiple selection or misselection are reduced, the edge selection result is more accurate, and the effect of subsequent optical proximity correction is improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP
Topography-aware optical proximity correction method, device, storage medium and electronic equipment
The application discloses a topography-aware optical proximity correction method and device, a storage medium and an electronic device. The topography-aware optical proximity correction method comprises the following steps: obtaining an original design layout; performing CMP simulation on the original design layout to generate wafer topography data; constructing a coupled optical model based on an EUV three-dimensional mask model and the wafer topography data; decomposing the layout of the design layout according to multi-graphic patterning process rules to obtain at least two mask layout; and performing collaborative topography-aware optical proximity correction on the at least two mask layout by using the coupled optical model to obtain at least two corrected mask layout; wherein when the current mask layout is corrected, the optical proximity environment used includes historical mask correction results generated based on the coupled optical model. The application can improve the imaging accuracy of advanced process nodes.
Owner:HUAXINCHENG (HANGZHOU) TECH CO LTD
Topography-aware optical proximity correction method, device, storage medium and electronic equipment
ActiveCN121411064BHigh precisionPhotomechanical exposure apparatusOriginals for photomechanical treatmentWaferTopography
The application discloses a topography-aware optical proximity correction method and device, a storage medium and an electronic device. The topography-aware optical proximity correction method comprises the following steps: obtaining an original design layout; performing topography-aware optical proximity correction on the original design layout by using a current TOPC model to generate an initial correction layout; performing in-situ measurement on a wafer manufactured based on the initial correction layout to obtain actual pattern data; comparing the actual pattern data with simulation pattern data generated based on the initial correction layout to generate model deviation data; analyzing the model deviation data by using a parameter correction model to generate a parameter correction amount; and updating the current TOPC model based on the parameter correction amount. The application can improve the accuracy of topography-aware optical proximity correction.
Owner:HUAXINCHENG (HANGZHOU) TECH CO LTD
Optimization method of optical proximity correction model, electronic device, storage medium and program product
The present disclosure provides an optimization method of an optical proximity correction model, an electronic device, a storage medium and a program product. The method comprises: performing a first stage iteration on parameters of the optical proximity correction model to generate a first model set; simulating the first model set by using simulation software to determine a first target function value set; training a machine learning model based on the first model set and the first target function value set to generate a trained machine learning model; predicting target function values of each model in a second stage iteration by using the trained machine learning model to generate a second target function value set, wherein the second stage iteration generates a second model set; and selecting a corresponding model from the second model set as a candidate model for inputting the simulation software for further optimization based on the second target function value set.
Owner:QUANXIN INTELLIGENT MFG TECH CO LTD
Optical proximity correction method, device and equipment of mask graph, and storage medium
ActiveCN121578581BImprove machining accuracyGuaranteed accuracy and reliabilityOriginals for photomechanical treatmentWaferingSemiconductor
The application relates to the technical field of semiconductor processing processes, and discloses a mask pattern optical proximity correction method, device, equipment and storage medium, the mask pattern optical proximity correction method comprises the following steps: performing topography prediction on a polishing surface of a wafer to be processed to obtain polishing surface topography information; correcting a focal plane parameter in a simulation optical model according to the polishing surface topography information; and performing optical proximity correction on an initial mask pattern by using the corrected simulation optical model to obtain a corrected mask pattern. In the application, the polishing surface topography information of the wafer to be processed is predicted first, and the focal plane parameter in the simulation optical model is corrected based on the polishing surface topography information, so that the accuracy and reliability of optical proximity correction of the initial mask pattern based on the simulation optical model are ensured, and the processing precision of semiconductor photolithography based on the mask pattern is improved.
Owner:HUAXINCHENG (HANGZHOU) TECH CO LTD
Optical proximity correction method based on fragmentation density configuration error feedback coefficient
PendingCN121559804APhotomechanical exposure apparatusOriginals for photomechanical treatmentHigh densityTesting Methods
The invention provides an optical proximity correction method based on a fragment density configuration error feedback coefficient. The optical proximity correction method comprises the following steps: S1, dividing a to-be-corrected chip layout into a plurality of independent fragment units; s2, calculating the pattern density of each fragmentation unit, and grading the fragmentation units according to the pattern density to obtain at least two density grades; s3, corresponding error feedback coefficients are configured for the fragment units of different density grades, and the absolute value of the error feedback coefficient of the fragment unit with the higher pattern density is smaller; s4, performing iterative correction on each fragment unit, and during iterative correction, calculating the pattern adjustment amount of each fragment unit based on the error value of each fragment unit and the corresponding error feedback coefficient, the adjustment amount = the error value * the error feedback coefficient; and S5, performing iterative correction on each fragment unit according to the adjustment amount to complete correction of the chip layout. The technical effects of fine correction of a high-density region and rapid convergence of a low-density region are achieved, and then the OPC overall correction precision and efficiency are improved.
Owner:CHONGQING XINLIAN MICROELECTRONICS CO LTD
Optical proximity correction method, electronic device, and storage medium
ActiveCN120891695BPhotomechanical exposure apparatusOriginals for photomechanical treatmentLayoutTesting Methods
The present disclosure relates to an optical proximity correction method, an electronic device and a storage medium. The method comprises: determining a cutting position of a pattern contour in a first sub-layout of higher priority and a pattern contour in a second sub-layout of lower priority within a predetermined range adjacent to the first sub-layout in sub-layouts divided by an initial layout, to cut each pattern contour into a plurality of first movable line segments and a plurality of first movable points; iteratively offsetting the first movable line segments and the first movable points until the first sub-layout is corrected to a first corrected sub-layout when the final offset is offset by a first offset amount; and offsetting the pattern contour of the second sub-layout based on the cutting position to generate a second corrected sub-layout. The scheme of the present disclosure can significantly improve the discontinuity at the layout boundary.
Owner:QUANXIN INTELLIGENT MFG TECH CO LTD
Differentiable edge-based optical proximity correction
Lithography mask generation processes utilizing a forward process that decomposes a resist pattern into segments and rasterizes the segments into a mask pattern using ray casting, and a backward process that determines lithography gradients for edge movements that incorporate mask rule constraints and propagates the lithography gradients into gradients and velocities for the segments.
Owner:NVIDIA CORP