450 results about "Optical proximity correction" patented technology

The invention discloses an optical proximity correction method and device, a storage medium and electronic equipment, and the method comprises the steps: obtaining an original layout; performing complexity analysis on the original layout to obtain a complexity analysis result; performing region division on the original layout according to the complexity analysis result to obtain a plurality of sub-regions; performing region merging on the plurality of sub-regions according to a preset strategy to generate a first type of regions and a second type of regions; and respectively carrying out corresponding correction processing on the first type of region and the second type of region. According to the scheme, the calculation complexity can be reduced while the high correction precision is kept.

The invention provides an optical proximity correction method which is applied to the technical field of semiconductors. In the invention, aiming at some special areas in the target layout, such as the condition that only one auxiliary graph can be added between adjacent main graphs, a new auxiliary graph adding mode and the auxiliary graph after shape adjustment are provided; specifically, an initial auxiliary graph with the width equal to that of a main graph is added between adjacent main graphs of a target main graph group, the graph density of the main graphs in a target layout is changed, sparse graphs also have the characteristics of dense graphs, then the added initial auxiliary graph is adjusted, and the graph density of the main graphs in the target layout is changed. And changing the initial auxiliary pattern into a target auxiliary pattern with a plurality of spacing gaps inside, so as to reduce the actual width of the target auxiliary pattern by using the spacing gaps, reduce the light intensity value of diffracted light at the target auxiliary pattern during exposure and development, improve the normalized logarithmic slope of the main pattern, reduce the edge placement error (EPE) and enlarge the process window.

The invention provides an optical proximity correction method and system based on mask error model optimization, and a terminal, and the method comprises the steps: building a data sample set containing a plurality of process conditions through obtaining a large amount of mask manufacturing data under a specific photoetching process; and based on the sample set, constructing a physical optical sub-model and a machine learning sub-model to form a mask error model for outputting a final mask key size value. And then, according to a plurality of preset alternative weight coefficient combinations, reconstructing an objective function which introduces a mask error term, calculating corresponding objective function values, and correcting the photoetching pattern by using an OPC algorithm corresponding to each objective function value to obtain performance index data so as to determine an optimal weight coefficient combination. And finally, optimizing the OPC algorithm by using the target function of the optimal combination, thereby realizing the accurate correction of the photoetching pattern, and improving the precision and yield of semiconductor manufacturing. According to the method, the mask error model comprehensively considering physical optics and machine learning is established, and the OPC process is introduced, so that the influence of the mask error can be predicted and compensated more accurately, the critical dimension deviation and the like are reduced, and the device performance and the yield are improved. The method can adapt to different process conditions, and parameters and weight coefficients can be dynamically adjusted. And moreover, rework can be reduced, automatic adjustment is realized through closed-loop feedback control, the production stability and efficiency are improved, and the cost is reduced.

The invention relates to the field of semiconductor processing, in particular to a mask process and optical proximity joint correction method, device and equipment. Inputting the target pattern into a pre-trained joint correction model, enabling the joint correction model to take the target pattern as an initial current mask pattern, and segmenting the edge of an optical proximity correction target pattern in the current mask pattern to obtain a plurality of edge sections, performing iterative adjustment on the position of the edge section according to a preset mask image density function, a first linear coefficient corresponding to the mask image density function, a preset photoresist image item and a second linear coefficient corresponding to the photoresist image item; the edge placement errors of all the edge sections of the current mask pattern are smaller than a preset qualified threshold value; and outputting the current mask pattern of which the edge placement error of the edge section is smaller than a preset qualified threshold value as a corrected mask pattern. According to the invention, the process period and cost are reduced.

A method of forming a grating coupler includes: providing an initial design layout of the grating coupler, wherein the initial design layout includes: a taper section, comprising a pair of tapers; and a grating section coupled to the taper section, the grating section having an array of gratings, wherein the gratings includes gradually changing shapes, from a top-view perspective, from a first non-convex octagonal shape of a central grating, at a center of the grating section, of one of a second non-convex octagonal shape, a convex octagonal shape, and a quadrilateral shape, to an edge grating near an edge of the grating section. The method further includes: converting the initial design layout into a revised design layout through an optical proximity correction operation; and manufacturing the grating coupler using the revised design layout.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

The invention discloses an optical proximity correction modeling method and system. The method comprises the following steps: acquiring a plurality of film layer data of the same layout pattern for different photoresist thicknesses, and pre-establishing different optical models by utilizing the plurality of film layer data and light source information; selecting a corresponding optical model according to the photoresist thickness in the measurement data; constructing a photoetching model by the selected optical model, the photoresist model and the photomask model; random valuing is carried out in the value ranges of the optical model parameters, the photoresist model parameters and the photomask model parameters, and a plurality of parameter combinations are generated; and performing photoetching simulation on the photoetching model by using a plurality of parameter combinations through simulation software, evaluating photoetching effects under different parameter combinations, and screening out an optimal parameter combination. Different optical models are introduced into different areas in the film layer structure, so that the subsequent OPC repair probability is reduced, and the semiconductor manufacturing precision and efficiency are improved.

An optical proximity correction (OPC) method for manufacturing a semiconductor chip includes: detecting corners of an original target pattern having a polygonal shape; rounding off the corners to generate a curved target pattern; dividing the curved target pattern into a linear section pattern and a curved section pattern; applying Manhattan OPC to the linear section pattern to generate a modified linear section pattern; applying curvilinear OPC to the curved section pattern to generate a modified curved section pattern; and merging the modified linear section pattern and the modified curved section pattern to generate a corrected pattern.

The invention provides a photoetching mask generation model for optical proximity correction. The photoetching mask generation model comprises an encoder consisting of coordinate convolution modules and a decoder consisting of convolution modules, the encoder performs spatial feature extraction on the input feature map to obtain the specific position of each pixel coordinate in the input design layout; the decoder maps the output feature of the encoder back to the original input dimension to generate a prediction output; a coordinate channel is added in an input feature map to obtain a modified input feature map, the convolution kernel dimension of a coordinate convolution module, receiving the modified input feature map, of the encoder is correspondingly increased, and the added coordinate channel is used for improving the capacity of the encoder for obtaining spatial position information of a design layout. The invention also provides an optical proximity correction method which is trained by using the photoetching mask generation model for optical proximity correction provided by the invention so as to improve the correction precision.

The invention provides a pattern correction method and correction system for a mask, and the method comprises the following steps: setting a plurality of main patterns and a plurality of auxiliary patterns, and collecting wafer data after photoetching of the main patterns and the auxiliary patterns; searching a main pattern with the same characteristic size as the auxiliary pattern on the mask plate as a reference pattern; acquiring a scaling ratio of the reference pattern transferred to the wafer from the mask plate, and acquiring virtual size data of the auxiliary pattern transferred to the wafer according to the scaling ratio and size information of the auxiliary pattern on the mask plate; and taking the virtual size data and the wafer data as modeling parameters of an optical proximity correction model, and iteratively establishing the optical proximity correction model until the correction error is smaller than a threshold value. The invention provides a pattern correction method and correction system for a mask plate, which can improve the pattern transfer accuracy of photoetching, thereby improving the semiconductor manufacturing yield.

The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask correction method, device and equipment and a medium, and the photomask correction method comprises the steps: obtaining a test layout with known parameters; training the initial optical proximity correction model based on known parameters until the cost evaluation function and the root-mean-square value are minimum, and obtaining an optical correction model; obtaining photochemical reaction parameters of the test layout, training an optical correction model based on the photochemical reaction parameters until the cost evaluation function and the root mean square value are minimum, and obtaining a target layout correction model; and inputting the initial layout into a target layout correction model to obtain a corrected layout, so as to obtain a target photomask based on the corrected layout, and at least ensuring that the exposed photomask pattern is consistent with a target pattern actually expected by a user.

The invention discloses a digital mask photoresist pattern matching method and system based on optical proximity correction. The method comprises the following steps: determining a modulation coefficient of a digital mask pattern; projecting the digital mask pattern based on a Hopkinson diffraction model and a photoresist model to obtain a photoresist pattern; performing optimization processing on the modulation coefficient through a steepest descent method to obtain a modulation coefficient after preliminary optimization; and calculating an error value between the photoresist pattern and a given target pattern through an image error method, and performing iterative optimization processing on the preliminarily optimized modulation coefficient according to the error value to obtain an optimized digital mask pattern. According to the invention, the matching rate of the exposure pattern and the target pattern can be improved by optimizing the modulation coefficient of the digital mask. The digital mask photoresist pattern matching method and system based on optical proximity correction can be widely applied to the technical field of photoresist image matching.

The invention discloses a model parameter optimization method and device for an optical model, a storage medium and a product. The method comprises the steps that a layout file corresponding to a to-be-tested graph is constructed based on preset model parameters of the optical model; executing optical proximity correction and photoetching rule check based on the layout file to obtain a corresponding check result; under the condition that the inspection result does not meet the detection passing condition, adjusting model parameters of the optical model according to the inspection result to obtain adjusted model parameters; and constructing a layout file corresponding to the to-be-tested graph by utilizing the adjusted model parameters, and returning to execute optical proximity correction and photoetching rule inspection based on the layout file until an inspection result meets a detection passing condition. According to the method and the device, the model parameters can be iteratively optimized based on the inspection results of the OPC and the LRC, the problem that the layout subjected to adaptive adjustment of the optical model is difficult to correct and optimize in the OPC process is solved, and the layout adjustment efficiency, the tape-out efficiency and the yield are improved.

The invention relates to an optical proximity effect correction method and device, equipment and a storage medium. The optical proximity effect correction method comprises the steps of obtaining a first correction basis of a target pattern based on a plurality of patterns included in the target pattern; according to the first correction basis, determining a first preset compensation value corresponding to the first correction basis from a first process compensation value table; and correcting the initial layout corresponding to the target pattern into a first corrected layout according to the first preset compensation value. The optical proximity effect correction method can realize efficient development.

The embodiment of the invention relates to an optical proximity correction method, a simulation model, electronic equipment and a storage medium. The method comprises the following steps: performing optical proximity correction on a first part in a layout to generate a first correction part; determining an initial offset value for performing optical proximity correction on the original layout data of the second part based on the original layout data of the first part and the correction layout data of the first correction part; optical proximity correction is performed on the second portion based on the initial offset value to generate a second corrected portion. According to the technical scheme, the calculation efficiency can be remarkably improved, the applicability is enhanced, and the training cost can be reduced.

The invention discloses an optical proximity correction method, and the method comprises the steps: obtaining an optimal segmentation range of a target graph according to exposure parameters, the target graph comprises a first edge and a second edge which are adjacent, and the first edge and the second edge form a corner of the target graph; performing simulated optical proximity correction according to the optimal segmentation range to obtain an optimal segmentation parameter combination; simulation optical proximity correction is conducted according to the optimal segmentation parameters, optimal strip-shaped auxiliary graph parameters are obtained, and strip-shaped auxiliary graphs are auxiliary graphs inserted to the peripheral sides of the corners; and generating a mask pattern according to the optimal segmentation parameter and the optimal strip-shaped auxiliary pattern parameter, wherein the mask pattern comprises a corrected target pattern and an inserted strip-shaped auxiliary pattern. According to the method, the strip-shaped auxiliary graph is inserted into the peripheral side of the corner of the target graph, so that the effect of solving the corner arcing problem is improved.

The invention provides an optical proximity correction method and device based on a plurality of photoetching models, a medium and a program product. The method comprises the following steps: judging whether a previous thin film lamination has differences in different areas according to an analysis result of a current photoetching condition; evaluating the influence of the difference on the current layer of photoetching pattern imaging, configuring one or more wafers according to an evaluation result, and respectively exposing to sample modeling data; respectively carrying out photoetching model calibration by utilizing modeling data; before optical proximity correction is carried out, patterns of an input layout are classified and marked according to different thin film lamination area patterns of a front layer and different types of patterns; and in the optical proximity correction process, respectively calling the corresponding photoetching models or sub-photoetching models to simulate and correct different types of graphs. According to the invention, the photoetching precision of each part of pattern is greatly improved, and the optical proximity correction effect is greatly improved.

Training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optical proximity correction (OPC) image for a mask. The method involves obtaining (i) a pre-OPC image associated with a design layout to be printed on a substrate, (ii) an image of one or more assist features for the mask associated with the design layout, and (iii) a reference post-OPC image of the design layout; and training the machine learning model using the pre-OPC image and the image of the one or more assist features as input such that a difference between the reference image and a predicted post-OPC image of the machine learning model is reduced.

A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

The invention discloses an optical proximity correction method, a mask plate and a semiconductor structure forming method, and the optical proximity correction method comprises the steps: obtaining a reference layout which comprises a plurality of first metal wire patterns, a plurality of second metal wire patterns and a plurality of cutting patterns; a to-be-corrected graph is obtained from the multiple cut-off graphs, the to-be-corrected graph comprises a first to-be-corrected graph and a second to-be-corrected graph, the first to-be-corrected graph and the second to-be-corrected graph are adjacent, and the distance between the first to-be-corrected graph and the second to-be-corrected graph is smaller than a first preset size; determining a target reference pattern corresponding to the to-be-corrected pattern from the plurality of second metal wire patterns; on the basis of the target reference graph, the first to-be-corrected graph and the second to-be-corrected graph are combined and corrected, a combined graph is obtained, the combined graph is formed, and the situation that a mask design rule is violated is avoided.

The invention provides a method for keeping the consistency of an auxiliary pattern when the auxiliary pattern is added and a hole layer pattern, and belongs to the field of semiconductors. The method for keeping the consistency of the auxiliary pattern during the addition of the auxiliary pattern comprises the following steps: providing a hole layer pattern; the first auxiliary pattern extends in the first direction, the second auxiliary pattern extends in the second direction, if the extended first auxiliary pattern and the extended second auxiliary pattern are overlapped, a virtual area is formed on the diagonal line of the first hole pattern and the second hole pattern, and the first direction and the second direction are perpendicular to each other; based on the length of the center line of the virtual area, the auxiliary graph parallel to the long center line is reserved. According to the method, the auxiliary pattern parallel to the long center line is reserved based on the length of the center line of the virtual area, so that the added auxiliary pattern can be kept consistent even if the pattern of the hole layer pattern rotates, and the influence on OPC (Optical Proximity Correction) is avoided.

The invention discloses a curve graph processing method and device, which accurately depicts a curve graph, uses a Manhattan polygon to characterize the curve graph, reduces the calculation complexity, optimizes the geometric morphology, removes redundant information, reduces the burden of a storage space, and finally obtains a smooth Manhattan polygon meeting constraint conditions. And a guarantee is provided for applying the curve graph to a universal edge-based OPC (Optical Proximity Correction) process.

The invention relates to the technical field of semiconductor processing technologies, and discloses an optical proximity correction method, device and equipment of a mask pattern and a storage medium, and the optical proximity correction method of the mask pattern comprises the steps: carrying out the morphology prediction of a polished surface of a to-be-processed wafer, and obtaining the morphology information of the polished surface; correcting focal plane parameters in a simulation optical model according to the shape information of the polished surface; and performing optical proximity correction on the initial mask pattern by using the corrected simulation optical model to obtain a corrected mask pattern. According to the method, the shape information of the polished surface of the to-be-processed wafer is predicted, and the focal plane parameters in the simulation optical model are corrected on the basis of the shape information, so that the accuracy and reliability of optical proximity correction of the initial mask pattern based on the simulation optical model are ensured; and the processing precision of semiconductor photoetching based on the mask pattern can be improved.

Disclosed are a method of forming an optical proximity correction (OPC) model and / or a method of fabricating a semiconductor device using the same. The method of forming the OPC model may include obtaining a scanning electron microscope (SEM) image, which is an average image of a plurality of images taken using one or more scanning electron microscopes, and a graphic data system (GDS) image, which is obtained by imaging a designed layout, aligning the SEM image and the GDS image, performing an image filtering process on the SEM image, extracting a contour from the SEM image, and verifying the contour. The verifying of the contour may be performed using a genetic algorithm. Variables in the genetic algorithm may include first parameters related to the image alignment process, second parameters related to the image filtering process, and third parameters related to a critical dimension (CD) measurement process.

An example embodiment in accordance with the present disclosure provides a method, apparatus, and storage medium for optical proximity correction (OPC) modeling. The method comprises: initializing a plurality of kernel functions for an OPC model, the plurality of kernel functions comprising at least a first category of kernel functions and a second category of kernel functions, the first category of kernel functions indicating optical proximity effects that attenuate as distance increases, the second category of kernel functions indicating optical proximity effects that mutate as distance increases, the distance indicates the distance between a target point and an adjacent point on the target layout; calibrating the plurality of kernel functions; and constructing an OPC model based on the plurality of calibrated kernel functions. In this way, the OPC model suitable for the contact type photoetching machine can be constructed, so that distortion in the photoetching process can be compensated, and finally formed patterns are closer to design requirements.

The invention discloses an optical proximity correction method and device, a computer readable storage medium and electronic equipment. The optical proximity correction method comprises the following steps: acquiring a to-be-corrected layout; correcting the to-be-corrected layout to obtain a preliminary corrected layout; obtaining a hot spot to be repaired according to the preliminary correction layout; dividing a first area, wherein the hot spot to be repaired is located in the first area; according to the first area, repairing the to-be-repaired hot spot to obtain a to-be-checked layout; checking the to-be-checked layout after the to-be-checked layout is corrected; and obtaining the tape-out layout according to the corrected checking result. After obtaining the preliminary correction layout and the hot spot to be repaired, dividing a first region; and repairing the hot spot to be repaired according to the first area. Only the layout of the first region with the to-be-repaired hot spot is repaired, so that the repair of patterns in other regions in the layout is avoided, and the repair efficiency and the repair speed can be effectively improved.

The invention provides an OPC (Optical Proximity Correction) method for regulating and controlling the resistance of a high-resistance sheet, which comprises the following steps of: 1, delimiting a layout area where a high-resistance layer and a silicide barrier layer are located in an original layout, and determining the resistance value of the high-resistance sheet according to the layout area; and 2, according to the resistance value of the sheet resistor of the high-resistance layer determined in the step 1, reducing the width of the overlapped part of the high-resistance layer and the silicide barrier layer. The resistance value of the high-resistance layer sheet resistor is regulated and controlled by changing the shape of the high-resistance layer in the layout, the position of a contact hole does not need to be adjusted, and more flexible layout design elasticity under different manufacturing processes is provided.

The invention provides an optical proximity correction method for a curve type mask and related equipment, and the method comprises the steps: obtaining an original mask pattern from a target layout file, initializing the original mask pattern, extracting the initial end point of each curve, and generating an end point set; simulating the original mask pattern to obtain a gradient map, and obtaining an endpoint set of the sub-resolution auxiliary pattern based on the gradient map; merging the end point sets of the sub-resolution auxiliary graph to obtain a merged end point set, generating a curve mask through a heuristic algorithm, and simulating the curve mask to obtain a mask plate; performing optical proximity correction on the vertex position of the mask through a gradient-based optimization method to obtain an optical proximity correction result of the mask; and the accuracy of optical proximity correction is improved.

The invention relates to the field of integrated circuit manufacturing, in particular to a joint correction method, device and equipment for a curve graph and a storage medium. According to the target wafer pattern, determining a corresponding curve mask pattern through a pre-trained optical proximity correction model; according to the curve mask pattern, determining a corresponding curve electron beam exposure pattern through a pre-trained mask process correction model; according to the curve electron beam exposure pattern, determining a corresponding Manhattan pattern and a numerical aperture; receiving a plurality of sample plate Manhattan patterns; according to the sample plate Manhattan graph, a corresponding sample plate curve graph is obtained through preset numerical aperture simulation; acquiring a mask scanning pattern corresponding to the sample plate curve graph; and calibrating a mask process calibration model to be trained according to the mask scanning pattern and the sample plate curve graph. According to the invention, the compatibility and the universality of the joint correction method for the curve graph are improved.

Systems and methods are provided for automated generation of optical proximity correction (OPC) recipes for producing photomasks for patterning semiconductor wafers, thereby improving the overall efficiency and effectiveness of computational lithography in modern semiconductor manufacturing. According to at least one embodiment, an OPC recipe is generated by a two-stage process that includes a reinforcement learning (RL) stage, for generating OPC actions for representative design patterns, and a large language model (LLM) stage, for generating an OPC recipe based on the OPC actions provided by the RL stage.