351 results about "Optical proximity correction" patented technology

The invention provides an optical proximity correction method and system based on mask error model optimization, and a terminal, and the method comprises the steps: building a data sample set containing a plurality of process conditions through obtaining a large amount of mask manufacturing data under a specific photoetching process; and based on the sample set, constructing a physical optical sub-model and a machine learning sub-model to form a mask error model for outputting a final mask key size value. And then, according to a plurality of preset alternative weight coefficient combinations, reconstructing an objective function which introduces a mask error term, calculating corresponding objective function values, and correcting the photoetching pattern by using an OPC algorithm corresponding to each objective function value to obtain performance index data so as to determine an optimal weight coefficient combination. And finally, optimizing the OPC algorithm by using the target function of the optimal combination, thereby realizing the accurate correction of the photoetching pattern, and improving the precision and yield of semiconductor manufacturing. According to the method, the mask error model comprehensively considering physical optics and machine learning is established, and the OPC process is introduced, so that the influence of the mask error can be predicted and compensated more accurately, the critical dimension deviation and the like are reduced, and the device performance and the yield are improved. The method can adapt to different process conditions, and parameters and weight coefficients can be dynamically adjusted. And moreover, rework can be reduced, automatic adjustment is realized through closed-loop feedback control, the production stability and efficiency are improved, and the cost is reduced.

The invention relates to the field of semiconductor processing, in particular to a mask process and optical proximity joint correction method, device and equipment. Inputting the target pattern into a pre-trained joint correction model, enabling the joint correction model to take the target pattern as an initial current mask pattern, and segmenting the edge of an optical proximity correction target pattern in the current mask pattern to obtain a plurality of edge sections, performing iterative adjustment on the position of the edge section according to a preset mask image density function, a first linear coefficient corresponding to the mask image density function, a preset photoresist image item and a second linear coefficient corresponding to the photoresist image item; the edge placement errors of all the edge sections of the current mask pattern are smaller than a preset qualified threshold value; and outputting the current mask pattern of which the edge placement error of the edge section is smaller than a preset qualified threshold value as a corrected mask pattern. According to the invention, the process period and cost are reduced.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

An optical proximity correction (OPC) method for manufacturing a semiconductor chip includes: detecting corners of an original target pattern having a polygonal shape; rounding off the corners to generate a curved target pattern; dividing the curved target pattern into a linear section pattern and a curved section pattern; applying Manhattan OPC to the linear section pattern to generate a modified linear section pattern; applying curvilinear OPC to the curved section pattern to generate a modified curved section pattern; and merging the modified linear section pattern and the modified curved section pattern to generate a corrected pattern.

The invention provides a photoetching mask generation model for optical proximity correction. The photoetching mask generation model comprises an encoder consisting of coordinate convolution modules and a decoder consisting of convolution modules, the encoder performs spatial feature extraction on the input feature map to obtain the specific position of each pixel coordinate in the input design layout; the decoder maps the output feature of the encoder back to the original input dimension to generate a prediction output; a coordinate channel is added in an input feature map to obtain a modified input feature map, the convolution kernel dimension of a coordinate convolution module, receiving the modified input feature map, of the encoder is correspondingly increased, and the added coordinate channel is used for improving the capacity of the encoder for obtaining spatial position information of a design layout. The invention also provides an optical proximity correction method which is trained by using the photoetching mask generation model for optical proximity correction provided by the invention so as to improve the correction precision.

The invention provides a pattern correction method and correction system for a mask, and the method comprises the following steps: setting a plurality of main patterns and a plurality of auxiliary patterns, and collecting wafer data after photoetching of the main patterns and the auxiliary patterns; searching a main pattern with the same characteristic size as the auxiliary pattern on the mask plate as a reference pattern; acquiring a scaling ratio of the reference pattern transferred to the wafer from the mask plate, and acquiring virtual size data of the auxiliary pattern transferred to the wafer according to the scaling ratio and size information of the auxiliary pattern on the mask plate; and taking the virtual size data and the wafer data as modeling parameters of an optical proximity correction model, and iteratively establishing the optical proximity correction model until the correction error is smaller than a threshold value. The invention provides a pattern correction method and correction system for a mask plate, which can improve the pattern transfer accuracy of photoetching, thereby improving the semiconductor manufacturing yield.

The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask correction method, device and equipment and a medium, and the photomask correction method comprises the steps: obtaining a test layout with known parameters; training the initial optical proximity correction model based on known parameters until the cost evaluation function and the root-mean-square value are minimum, and obtaining an optical correction model; obtaining photochemical reaction parameters of the test layout, training an optical correction model based on the photochemical reaction parameters until the cost evaluation function and the root mean square value are minimum, and obtaining a target layout correction model; and inputting the initial layout into a target layout correction model to obtain a corrected layout, so as to obtain a target photomask based on the corrected layout, and at least ensuring that the exposed photomask pattern is consistent with a target pattern actually expected by a user.

The invention discloses a digital mask photoresist pattern matching method and system based on optical proximity correction. The method comprises the following steps: determining a modulation coefficient of a digital mask pattern; projecting the digital mask pattern based on a Hopkinson diffraction model and a photoresist model to obtain a photoresist pattern; performing optimization processing on the modulation coefficient through a steepest descent method to obtain a modulation coefficient after preliminary optimization; and calculating an error value between the photoresist pattern and a given target pattern through an image error method, and performing iterative optimization processing on the preliminarily optimized modulation coefficient according to the error value to obtain an optimized digital mask pattern. According to the invention, the matching rate of the exposure pattern and the target pattern can be improved by optimizing the modulation coefficient of the digital mask. The digital mask photoresist pattern matching method and system based on optical proximity correction can be widely applied to the technical field of photoresist image matching.

The invention relates to an optical proximity effect correction method and device, equipment and a storage medium. The optical proximity effect correction method comprises the steps of obtaining a first correction basis of a target pattern based on a plurality of patterns included in the target pattern; according to the first correction basis, determining a first preset compensation value corresponding to the first correction basis from a first process compensation value table; and correcting the initial layout corresponding to the target pattern into a first corrected layout according to the first preset compensation value. The optical proximity effect correction method can realize efficient development.

The embodiment of the invention relates to an optical proximity correction method, a simulation model, electronic equipment and a storage medium. The method comprises the following steps: performing optical proximity correction on a first part in a layout to generate a first correction part; determining an initial offset value for performing optical proximity correction on the original layout data of the second part based on the original layout data of the first part and the correction layout data of the first correction part; optical proximity correction is performed on the second portion based on the initial offset value to generate a second corrected portion. According to the technical scheme, the calculation efficiency can be remarkably improved, the applicability is enhanced, and the training cost can be reduced.

The invention discloses an optical proximity correction method, and the method comprises the steps: obtaining an optimal segmentation range of a target graph according to exposure parameters, the target graph comprises a first edge and a second edge which are adjacent, and the first edge and the second edge form a corner of the target graph; performing simulated optical proximity correction according to the optimal segmentation range to obtain an optimal segmentation parameter combination; simulation optical proximity correction is conducted according to the optimal segmentation parameters, optimal strip-shaped auxiliary graph parameters are obtained, and strip-shaped auxiliary graphs are auxiliary graphs inserted to the peripheral sides of the corners; and generating a mask pattern according to the optimal segmentation parameter and the optimal strip-shaped auxiliary pattern parameter, wherein the mask pattern comprises a corrected target pattern and an inserted strip-shaped auxiliary pattern. According to the method, the strip-shaped auxiliary graph is inserted into the peripheral side of the corner of the target graph, so that the effect of solving the corner arcing problem is improved.

Training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optical proximity correction (OPC) image for a mask. The method involves obtaining (i) a pre-OPC image associated with a design layout to be printed on a substrate, (ii) an image of one or more assist features for the mask associated with the design layout, and (iii) a reference post-OPC image of the design layout; and training the machine learning model using the pre-OPC image and the image of the one or more assist features as input such that a difference between the reference image and a predicted post-OPC image of the machine learning model is reduced.

The invention discloses an optical proximity correction method, a mask plate and a semiconductor structure forming method, and the optical proximity correction method comprises the steps: obtaining a reference layout which comprises a plurality of first metal wire patterns, a plurality of second metal wire patterns and a plurality of cutting patterns; a to-be-corrected graph is obtained from the multiple cut-off graphs, the to-be-corrected graph comprises a first to-be-corrected graph and a second to-be-corrected graph, the first to-be-corrected graph and the second to-be-corrected graph are adjacent, and the distance between the first to-be-corrected graph and the second to-be-corrected graph is smaller than a first preset size; determining a target reference pattern corresponding to the to-be-corrected pattern from the plurality of second metal wire patterns; on the basis of the target reference graph, the first to-be-corrected graph and the second to-be-corrected graph are combined and corrected, a combined graph is obtained, the combined graph is formed, and the situation that a mask design rule is violated is avoided.

The invention provides a method for keeping the consistency of an auxiliary pattern when the auxiliary pattern is added and a hole layer pattern, and belongs to the field of semiconductors. The method for keeping the consistency of the auxiliary pattern during the addition of the auxiliary pattern comprises the following steps: providing a hole layer pattern; the first auxiliary pattern extends in the first direction, the second auxiliary pattern extends in the second direction, if the extended first auxiliary pattern and the extended second auxiliary pattern are overlapped, a virtual area is formed on the diagonal line of the first hole pattern and the second hole pattern, and the first direction and the second direction are perpendicular to each other; based on the length of the center line of the virtual area, the auxiliary graph parallel to the long center line is reserved. According to the method, the auxiliary pattern parallel to the long center line is reserved based on the length of the center line of the virtual area, so that the added auxiliary pattern can be kept consistent even if the pattern of the hole layer pattern rotates, and the influence on OPC (Optical Proximity Correction) is avoided.

The invention relates to the technical field of semiconductor processing technologies, and discloses an optical proximity correction method, device and equipment of a mask pattern and a storage medium, and the optical proximity correction method of the mask pattern comprises the steps: carrying out the morphology prediction of a polished surface of a to-be-processed wafer, and obtaining the morphology information of the polished surface; correcting focal plane parameters in a simulation optical model according to the shape information of the polished surface; and performing optical proximity correction on the initial mask pattern by using the corrected simulation optical model to obtain a corrected mask pattern. According to the method, the shape information of the polished surface of the to-be-processed wafer is predicted, and the focal plane parameters in the simulation optical model are corrected on the basis of the shape information, so that the accuracy and reliability of optical proximity correction of the initial mask pattern based on the simulation optical model are ensured; and the processing precision of semiconductor photoetching based on the mask pattern can be improved.

Disclosed are a method of forming an optical proximity correction (OPC) model and / or a method of fabricating a semiconductor device using the same. The method of forming the OPC model may include obtaining a scanning electron microscope (SEM) image, which is an average image of a plurality of images taken using one or more scanning electron microscopes, and a graphic data system (GDS) image, which is obtained by imaging a designed layout, aligning the SEM image and the GDS image, performing an image filtering process on the SEM image, extracting a contour from the SEM image, and verifying the contour. The verifying of the contour may be performed using a genetic algorithm. Variables in the genetic algorithm may include first parameters related to the image alignment process, second parameters related to the image filtering process, and third parameters related to a critical dimension (CD) measurement process.

An example embodiment in accordance with the present disclosure provides a method, apparatus, and storage medium for optical proximity correction (OPC) modeling. The method comprises: initializing a plurality of kernel functions for an OPC model, the plurality of kernel functions comprising at least a first category of kernel functions and a second category of kernel functions, the first category of kernel functions indicating optical proximity effects that attenuate as distance increases, the second category of kernel functions indicating optical proximity effects that mutate as distance increases, the distance indicates the distance between a target point and an adjacent point on the target layout; calibrating the plurality of kernel functions; and constructing an OPC model based on the plurality of calibrated kernel functions. In this way, the OPC model suitable for the contact type photoetching machine can be constructed, so that distortion in the photoetching process can be compensated, and finally formed patterns are closer to design requirements.

The invention provides an OPC (Optical Proximity Correction) method for regulating and controlling the resistance of a high-resistance sheet, which comprises the following steps of: 1, delimiting a layout area where a high-resistance layer and a silicide barrier layer are located in an original layout, and determining the resistance value of the high-resistance sheet according to the layout area; and 2, according to the resistance value of the sheet resistor of the high-resistance layer determined in the step 1, reducing the width of the overlapped part of the high-resistance layer and the silicide barrier layer. The resistance value of the high-resistance layer sheet resistor is regulated and controlled by changing the shape of the high-resistance layer in the layout, the position of a contact hole does not need to be adjusted, and more flexible layout design elasticity under different manufacturing processes is provided.

The invention provides an optical proximity correction method for a curve type mask and related equipment, and the method comprises the steps: obtaining an original mask pattern from a target layout file, initializing the original mask pattern, extracting the initial end point of each curve, and generating an end point set; simulating the original mask pattern to obtain a gradient map, and obtaining an endpoint set of the sub-resolution auxiliary pattern based on the gradient map; merging the end point sets of the sub-resolution auxiliary graph to obtain a merged end point set, generating a curve mask through a heuristic algorithm, and simulating the curve mask to obtain a mask plate; performing optical proximity correction on the vertex position of the mask through a gradient-based optimization method to obtain an optical proximity correction result of the mask; and the accuracy of optical proximity correction is improved.

The invention relates to the field of integrated circuit manufacturing, in particular to a joint correction method, device and equipment for a curve graph and a storage medium. According to the target wafer pattern, determining a corresponding curve mask pattern through a pre-trained optical proximity correction model; according to the curve mask pattern, determining a corresponding curve electron beam exposure pattern through a pre-trained mask process correction model; according to the curve electron beam exposure pattern, determining a corresponding Manhattan pattern and a numerical aperture; receiving a plurality of sample plate Manhattan patterns; according to the sample plate Manhattan graph, a corresponding sample plate curve graph is obtained through preset numerical aperture simulation; acquiring a mask scanning pattern corresponding to the sample plate curve graph; and calibrating a mask process calibration model to be trained according to the mask scanning pattern and the sample plate curve graph. According to the invention, the compatibility and the universality of the joint correction method for the curve graph are improved.

Systems and methods are provided for automated generation of optical proximity correction (OPC) recipes for producing photomasks for patterning semiconductor wafers, thereby improving the overall efficiency and effectiveness of computational lithography in modern semiconductor manufacturing. According to at least one embodiment, an OPC recipe is generated by a two-stage process that includes a reinforcement learning (RL) stage, for generating OPC actions for representative design patterns, and a large language model (LLM) stage, for generating an OPC recipe based on the OPC actions provided by the RL stage.

The invention provides an optical proximity correction method and related equipment. The method comprises the following steps: identifying a target sideline from a to-be-processed initial pattern; the initial pattern is a pattern in a design layout of the semiconductor device; performing fairing processing on the target sideline to obtain a to-be-Manhattan line segment; performing Manhattan processing on the to-be-Manhattan line segment to obtain a to-be-corrected line segment; and performing optical proximity correction on the line segment to be corrected, and constructing a target pattern corresponding to the initial pattern. According to the method disclosed by the invention, the pattern after Manhattan processing is prevented from being too complicated and containing unnecessary fine structures, the simplicity and the effectiveness of the pattern after Manhattan processing are ensured, the final mask design can be simpler, and the possible problems in the subsequent manufacturing process are also reduced.

The embodiment of the invention provides a resist structure prediction model training method and device and a resist structure prediction method and device, and relates to the technical field of semiconductors, and the method comprises the steps: obtaining a training data set which comprises a plurality of groups of training data, each group of training data comprises an exposure focal length, a photoetching characteristic pattern and a resist pattern generated by photoetching based on the photoetching characteristic pattern under the exposure focal length, and the photoetching characteristic pattern is subjected to optical proximity correction; training a to-be-trained model by using the training data set to obtain a resist structure prediction model; the to-be-trained model comprises a deep learning neural network, and the deep learning neural network is used for predicting a resist pattern generated by photoetching based on the photoetching feature pattern under the exposure focal length. According to the embodiment of the invention, the resist pattern generated by photoetching of the photoetching feature pattern subjected to optical proximity correction can be accurately predicted, so that a basis can be provided for verifying the optical proximity correction effect of the photoetching feature pattern.

Systems and methods are presented in support of cross-mask error enhancement factor (MEEF)-based optical proximity correction (OPC) for curvilinear masks. In some examples, a method may include the steps of accessing a curvilinear mask and a cross- MEEF matrix for the curvilinear mask. The curvilinear mask may be represented through a set of vertices and the cross-MEEF matrix may specify edge placement error (EPE) changes to the set of vertices of the curvilinear mask when a given vertex of the set of vertices of the curvilinear mask is moved by a distance unit. The method may also include a step of performing an OPC operation using the cross-MEEF matrix.

Some example embodiments provide an optical proximity correction (OPC) method using an OPC model having improved performance and / or a method of manufacturing a mask by using the OPC method. An OPC method includes receiving a design layout of a target pattern, generating a first OPC model on the design layout, in which an optical effect of an exposure process is reflected, generating a second OPC model in which a characteristic of a photoresist in the exposure process is reflected, and performing a simulation using the first and second OPC models to obtain an OPC-performed design layout. The generating the second OPC model includes differently applying a combination of kernel functions, used in the second OPC model, to each pattern region.

An optical proximity correction (OPC) method includes generating a retarget curve line of a polygonal pattern layout of a target pattern, generating first control points on the retarget curve line, generating a first curvilinear pattern layout based on the first control points, extracting a contour of the target pattern through a OPC simulation, calculating an edge placement error, determining whether to re-perform the extracting, when it is determined to re-perform the extracting of the contour, shifting the first control points to second control points, and when it is determined not to re-perform the extracting, determining the first curvilinear pattern layout as an OPCed layout. In the shifting, a first starting control point is shifted in a first direction different from a normal direction. After the shifting, the generating of the first curvilinear pattern layout is performed based on the second control points to generate a second curvilinear pattern layout.

The embodiment of the invention provides a method, a system and equipment for establishing an optical proximity correction model and a storage medium, and the method comprises the steps: providing a test layout which is provided with a first test pattern; performing correction operation on the first test pattern by using a first optical proximity correction model to generate mask pattern data of the first test pattern; obtaining a physical contour of a first type semiconductor structure formed on a physical wafer by the first test pattern when exposure operation is executed according to the mask pattern data; the physical contour is the contour of the first type semiconductor structure corresponding to the repeated region; performing photoetching process simulation on the mask pattern data by using the first optical proximity correction model to generate a prediction contour; and correcting the first optical proximity correction model according to the physical contour and the predicted contour to obtain a second optical proximity correction model. By adopting the technical scheme, the correction precision of the OPC model can be improved, and the photoetching quality is improved.

The invention relates to an optical proximity correction method, electronic equipment and a computer readable storage medium. The optical proximity correction method comprises the following steps: cutting the outline of an initial layout graph into a plurality of line segments; cutting a line segment in a preset area of the contour into a plurality of first points; determining a corresponding light intensity error aiming at the plurality of line segments and each first point in the plurality of first points, wherein the light intensity error indicates the deviation between the simulation graph and the target layout graph; comparing the light intensity error with a first threshold value; and moving the line segment having a light intensity error greater than the first threshold and the first point to generate an updated layout pattern having a smaller light intensity error. According to the scheme provided by the embodiment of the invention, the shrinkage effect at the preset position of the layout graph can be remarkably reduced while the calculation cost is effectively controlled.

Grouping image patterns using a trained machine learning model to determine wafer behavior in a patterning process is described. The described operations include converting one or more patterned process images including the image patterns into feature vectors based on a trained machine learning model. The feature vector corresponds to the image pattern. The described operations include grouping feature vectors having features indicative of image patterns that cause matched wafer and / or wafer defect behavior during the patterning process based on a trained machine learning model. The one or more patterned process images include a spatial image, a resist image, and / or other images. The grouped feature vectors may be used to: detect potential patterning defects on a wafer during a lithographic manufacturability test as part of optical proximity correction; adjusting the layout design of the mask; and / or generating a track gauge line / defect candidate list; and other uses.

The invention relates to an OPC (optical proximity correction)-based energy priority satellite edge service device, which comprises a constellation-level orbit perception request distribution module (ORD), a satellite-level pulse task scheduling module (PTS) and a task-level energy perception runtime management module (ERM). And high-throughput, low-delay and low-energy-consumption intelligent services in a multi-satellite and multi-task environment are realized.