284 results about "Optical proximity correction" patented technology

The invention provides an optical proximity correction method and system based on mask error model optimization, and a terminal, and the method comprises the steps: building a data sample set containing a plurality of process conditions through obtaining a large amount of mask manufacturing data under a specific photoetching process; and based on the sample set, constructing a physical optical sub-model and a machine learning sub-model to form a mask error model for outputting a final mask key size value. And then, according to a plurality of preset alternative weight coefficient combinations, reconstructing an objective function which introduces a mask error term, calculating corresponding objective function values, and correcting the photoetching pattern by using an OPC algorithm corresponding to each objective function value to obtain performance index data so as to determine an optimal weight coefficient combination. And finally, optimizing the OPC algorithm by using the target function of the optimal combination, thereby realizing the accurate correction of the photoetching pattern, and improving the precision and yield of semiconductor manufacturing. According to the method, the mask error model comprehensively considering physical optics and machine learning is established, and the OPC process is introduced, so that the influence of the mask error can be predicted and compensated more accurately, the critical dimension deviation and the like are reduced, and the device performance and the yield are improved. The method can adapt to different process conditions, and parameters and weight coefficients can be dynamically adjusted. And moreover, rework can be reduced, automatic adjustment is realized through closed-loop feedback control, the production stability and efficiency are improved, and the cost is reduced.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

An optical proximity correction (OPC) method for manufacturing a semiconductor chip includes: detecting corners of an original target pattern having a polygonal shape; rounding off the corners to generate a curved target pattern; dividing the curved target pattern into a linear section pattern and a curved section pattern; applying Manhattan OPC to the linear section pattern to generate a modified linear section pattern; applying curvilinear OPC to the curved section pattern to generate a modified curved section pattern; and merging the modified linear section pattern and the modified curved section pattern to generate a corrected pattern.

The invention provides a photoetching mask generation model for optical proximity correction. The photoetching mask generation model comprises an encoder consisting of coordinate convolution modules and a decoder consisting of convolution modules, the encoder performs spatial feature extraction on the input feature map to obtain the specific position of each pixel coordinate in the input design layout; the decoder maps the output feature of the encoder back to the original input dimension to generate a prediction output; a coordinate channel is added in an input feature map to obtain a modified input feature map, the convolution kernel dimension of a coordinate convolution module, receiving the modified input feature map, of the encoder is correspondingly increased, and the added coordinate channel is used for improving the capacity of the encoder for obtaining spatial position information of a design layout. The invention also provides an optical proximity correction method which is trained by using the photoetching mask generation model for optical proximity correction provided by the invention so as to improve the correction precision.

The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask correction method, device and equipment and a medium, and the photomask correction method comprises the steps: obtaining a test layout with known parameters; training the initial optical proximity correction model based on known parameters until the cost evaluation function and the root-mean-square value are minimum, and obtaining an optical correction model; obtaining photochemical reaction parameters of the test layout, training an optical correction model based on the photochemical reaction parameters until the cost evaluation function and the root mean square value are minimum, and obtaining a target layout correction model; and inputting the initial layout into a target layout correction model to obtain a corrected layout, so as to obtain a target photomask based on the corrected layout, and at least ensuring that the exposed photomask pattern is consistent with a target pattern actually expected by a user.

The invention relates to an optical proximity effect correction method and device, equipment and a storage medium. The optical proximity effect correction method comprises the steps of obtaining a first correction basis of a target pattern based on a plurality of patterns included in the target pattern; according to the first correction basis, determining a first preset compensation value corresponding to the first correction basis from a first process compensation value table; and correcting the initial layout corresponding to the target pattern into a first corrected layout according to the first preset compensation value. The optical proximity effect correction method can realize efficient development.

The embodiment of the invention relates to an optical proximity correction method, a simulation model, electronic equipment and a storage medium. The method comprises the following steps: performing optical proximity correction on a first part in a layout to generate a first correction part; determining an initial offset value for performing optical proximity correction on the original layout data of the second part based on the original layout data of the first part and the correction layout data of the first correction part; optical proximity correction is performed on the second portion based on the initial offset value to generate a second corrected portion. According to the technical scheme, the calculation efficiency can be remarkably improved, the applicability is enhanced, and the training cost can be reduced.

The invention discloses an optical proximity correction method, and the method comprises the steps: obtaining an optimal segmentation range of a target graph according to exposure parameters, the target graph comprises a first edge and a second edge which are adjacent, and the first edge and the second edge form a corner of the target graph; performing simulated optical proximity correction according to the optimal segmentation range to obtain an optimal segmentation parameter combination; simulation optical proximity correction is conducted according to the optimal segmentation parameters, optimal strip-shaped auxiliary graph parameters are obtained, and strip-shaped auxiliary graphs are auxiliary graphs inserted to the peripheral sides of the corners; and generating a mask pattern according to the optimal segmentation parameter and the optimal strip-shaped auxiliary pattern parameter, wherein the mask pattern comprises a corrected target pattern and an inserted strip-shaped auxiliary pattern. According to the method, the strip-shaped auxiliary graph is inserted into the peripheral side of the corner of the target graph, so that the effect of solving the corner arcing problem is improved.

Training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optical proximity correction (OPC) image for a mask. The method involves obtaining (i) a pre-OPC image associated with a design layout to be printed on a substrate, (ii) an image of one or more assist features for the mask associated with the design layout, and (iii) a reference post-OPC image of the design layout; and training the machine learning model using the pre-OPC image and the image of the one or more assist features as input such that a difference between the reference image and a predicted post-OPC image of the machine learning model is reduced.

The invention discloses an optical proximity correction method, a mask plate and a semiconductor structure forming method, and the optical proximity correction method comprises the steps: obtaining a reference layout which comprises a plurality of first metal wire patterns, a plurality of second metal wire patterns and a plurality of cutting patterns; a to-be-corrected graph is obtained from the multiple cut-off graphs, the to-be-corrected graph comprises a first to-be-corrected graph and a second to-be-corrected graph, the first to-be-corrected graph and the second to-be-corrected graph are adjacent, and the distance between the first to-be-corrected graph and the second to-be-corrected graph is smaller than a first preset size; determining a target reference pattern corresponding to the to-be-corrected pattern from the plurality of second metal wire patterns; on the basis of the target reference graph, the first to-be-corrected graph and the second to-be-corrected graph are combined and corrected, a combined graph is obtained, the combined graph is formed, and the situation that a mask design rule is violated is avoided.

The invention provides a method for keeping the consistency of an auxiliary pattern when the auxiliary pattern is added and a hole layer pattern, and belongs to the field of semiconductors. The method for keeping the consistency of the auxiliary pattern during the addition of the auxiliary pattern comprises the following steps: providing a hole layer pattern; the first auxiliary pattern extends in the first direction, the second auxiliary pattern extends in the second direction, if the extended first auxiliary pattern and the extended second auxiliary pattern are overlapped, a virtual area is formed on the diagonal line of the first hole pattern and the second hole pattern, and the first direction and the second direction are perpendicular to each other; based on the length of the center line of the virtual area, the auxiliary graph parallel to the long center line is reserved. According to the method, the auxiliary pattern parallel to the long center line is reserved based on the length of the center line of the virtual area, so that the added auxiliary pattern can be kept consistent even if the pattern of the hole layer pattern rotates, and the influence on OPC (Optical Proximity Correction) is avoided.

The invention relates to the technical field of semiconductor processing technologies, and discloses an optical proximity correction method, device and equipment of a mask pattern and a storage medium, and the optical proximity correction method of the mask pattern comprises the steps: carrying out the morphology prediction of a polished surface of a to-be-processed wafer, and obtaining the morphology information of the polished surface; correcting focal plane parameters in a simulation optical model according to the shape information of the polished surface; and performing optical proximity correction on the initial mask pattern by using the corrected simulation optical model to obtain a corrected mask pattern. According to the method, the shape information of the polished surface of the to-be-processed wafer is predicted, and the focal plane parameters in the simulation optical model are corrected on the basis of the shape information, so that the accuracy and reliability of optical proximity correction of the initial mask pattern based on the simulation optical model are ensured; and the processing precision of semiconductor photoetching based on the mask pattern can be improved.

The invention provides an OPC (Optical Proximity Correction) method for regulating and controlling the resistance of a high-resistance sheet, which comprises the following steps of: 1, delimiting a layout area where a high-resistance layer and a silicide barrier layer are located in an original layout, and determining the resistance value of the high-resistance sheet according to the layout area; and 2, according to the resistance value of the sheet resistor of the high-resistance layer determined in the step 1, reducing the width of the overlapped part of the high-resistance layer and the silicide barrier layer. The resistance value of the high-resistance layer sheet resistor is regulated and controlled by changing the shape of the high-resistance layer in the layout, the position of a contact hole does not need to be adjusted, and more flexible layout design elasticity under different manufacturing processes is provided.

The invention provides an optical proximity correction method for a curve type mask and related equipment, and the method comprises the steps: obtaining an original mask pattern from a target layout file, initializing the original mask pattern, extracting the initial end point of each curve, and generating an end point set; simulating the original mask pattern to obtain a gradient map, and obtaining an endpoint set of the sub-resolution auxiliary pattern based on the gradient map; merging the end point sets of the sub-resolution auxiliary graph to obtain a merged end point set, generating a curve mask through a heuristic algorithm, and simulating the curve mask to obtain a mask plate; performing optical proximity correction on the vertex position of the mask through a gradient-based optimization method to obtain an optical proximity correction result of the mask; and the accuracy of optical proximity correction is improved.

The invention relates to the field of integrated circuit manufacturing, in particular to a joint correction method, device and equipment for a curve graph and a storage medium. According to the target wafer pattern, determining a corresponding curve mask pattern through a pre-trained optical proximity correction model; according to the curve mask pattern, determining a corresponding curve electron beam exposure pattern through a pre-trained mask process correction model; according to the curve electron beam exposure pattern, determining a corresponding Manhattan pattern and a numerical aperture; receiving a plurality of sample plate Manhattan patterns; according to the sample plate Manhattan graph, a corresponding sample plate curve graph is obtained through preset numerical aperture simulation; acquiring a mask scanning pattern corresponding to the sample plate curve graph; and calibrating a mask process calibration model to be trained according to the mask scanning pattern and the sample plate curve graph. According to the invention, the compatibility and the universality of the joint correction method for the curve graph are improved.

Systems and methods are provided for automated generation of optical proximity correction (OPC) recipes for producing photomasks for patterning semiconductor wafers, thereby improving the overall efficiency and effectiveness of computational lithography in modern semiconductor manufacturing. According to at least one embodiment, an OPC recipe is generated by a two-stage process that includes a reinforcement learning (RL) stage, for generating OPC actions for representative design patterns, and a large language model (LLM) stage, for generating an OPC recipe based on the OPC actions provided by the RL stage.

The invention provides an optical proximity correction method and related equipment. The method comprises the following steps: identifying a target sideline from a to-be-processed initial pattern; the initial pattern is a pattern in a design layout of the semiconductor device; performing fairing processing on the target sideline to obtain a to-be-Manhattan line segment; performing Manhattan processing on the to-be-Manhattan line segment to obtain a to-be-corrected line segment; and performing optical proximity correction on the line segment to be corrected, and constructing a target pattern corresponding to the initial pattern. According to the method disclosed by the invention, the pattern after Manhattan processing is prevented from being too complicated and containing unnecessary fine structures, the simplicity and the effectiveness of the pattern after Manhattan processing are ensured, the final mask design can be simpler, and the possible problems in the subsequent manufacturing process are also reduced.

Systems and methods are presented in support of cross-mask error enhancement factor (MEEF)-based optical proximity correction (OPC) for curvilinear masks. In some examples, a method may include the steps of accessing a curvilinear mask and a cross- MEEF matrix for the curvilinear mask. The curvilinear mask may be represented through a set of vertices and the cross-MEEF matrix may specify edge placement error (EPE) changes to the set of vertices of the curvilinear mask when a given vertex of the set of vertices of the curvilinear mask is moved by a distance unit. The method may also include a step of performing an OPC operation using the cross-MEEF matrix.

The embodiment of the invention provides a method, a system and equipment for establishing an optical proximity correction model and a storage medium, and the method comprises the steps: providing a test layout which is provided with a first test pattern; performing correction operation on the first test pattern by using a first optical proximity correction model to generate mask pattern data of the first test pattern; obtaining a physical contour of a first type semiconductor structure formed on a physical wafer by the first test pattern when exposure operation is executed according to the mask pattern data; the physical contour is the contour of the first type semiconductor structure corresponding to the repeated region; performing photoetching process simulation on the mask pattern data by using the first optical proximity correction model to generate a prediction contour; and correcting the first optical proximity correction model according to the physical contour and the predicted contour to obtain a second optical proximity correction model. By adopting the technical scheme, the correction precision of the OPC model can be improved, and the photoetching quality is improved.

The invention relates to an optical proximity correction method, electronic equipment and a computer readable storage medium. The optical proximity correction method comprises the following steps: cutting the outline of an initial layout graph into a plurality of line segments; cutting a line segment in a preset area of the contour into a plurality of first points; determining a corresponding light intensity error aiming at the plurality of line segments and each first point in the plurality of first points, wherein the light intensity error indicates the deviation between the simulation graph and the target layout graph; comparing the light intensity error with a first threshold value; and moving the line segment having a light intensity error greater than the first threshold and the first point to generate an updated layout pattern having a smaller light intensity error. According to the scheme provided by the embodiment of the invention, the shrinkage effect at the preset position of the layout graph can be remarkably reduced while the calculation cost is effectively controlled.

The invention relates to an OPC (optical proximity correction)-based energy priority satellite edge service device, which comprises a constellation-level orbit perception request distribution module (ORD), a satellite-level pulse task scheduling module (PTS) and a task-level energy perception runtime management module (ERM). And high-throughput, low-delay and low-energy-consumption intelligent services in a multi-satellite and multi-task environment are realized.

The invention provides an optical proximity correction method, electronic equipment and a storage medium, and the method comprises the steps: carrying out the initial correction processing of an initial mask layout, obtaining a corrected mask layout, determining a first mask pattern and a second mask pattern, which violate a standard mask rule, in the corrected mask patterns, and determining the rollback distance of the first mask pattern and the second mask pattern according to the violation information, the first contact hole, the first through hole, the second contact hole and the second through hole and the violation information between the first mask pattern and the second mask pattern, and moving the first mask pattern and the second mask pattern based on the rollback distance to obtain a target mask layout. By considering the distance between the mask pattern through hole and the contact hole, the coverage rate and the electrical property of the metal interconnection layer to the contact hole and the through hole are ensured.

The invention discloses a layout optical proximity correction method, device and equipment and a storage medium, and is applied to the technical field of chip preparation, and the method comprises the steps: determining a first to-be-corrected graph with insufficient edge placement error amount in a through hole graph after optical proximity effect correction based on a mask rule; moving the to-be-adjusted edge with insufficient edge placement error amount in the first to-be-corrected graph to a direction far away from the center of the first to-be-corrected graph by a target distance according to mask rule checking; the target distance is a distance enabling the second to-be-corrected pattern to meet the edge placement error amount after photoetching simulation; and removing the target rectangle from the corner, opposite to the other through hole pattern, in the second to-be-corrected pattern to obtain a corrected pattern. According to the method, for the through hole pattern with insufficient edge placement error amount due to mask rule inspection, the edge placement error amount is met by moving the to-be-adjusted edge, and then the mask rule inspection is met by digging out the target rectangle to form the unfilled corner, so that the correction of the through hole pattern is realized.

The invention discloses a shape perception optical proximity effect correction method and device, a storage medium and electronic equipment, and the method comprises the steps: obtaining an original design layout; performing CMP simulation on the original design layout to generate wafer morphology data; constructing a coupling optical model based on the EUV three-dimensional mask model and the wafer morphology data; performing layout decomposition on the design layout according to a multi-patterning process rule to obtain at least two mask plate patterns; a coupling optical model is adopted to carry out collaborative morphology perception optical proximity effect correction on the at least two mask plate graphs, and at least two corrected mask plate graphs are obtained; wherein when the current mask pattern is corrected, the adopted optical proximity environment comprises a historical mask correction result generated based on the coupling optical model. According to the invention, the imaging precision of advanced process nodes can be improved.

The invention relates to an optical proximity correction method and correction device, a mask, equipment and a storage medium. The method comprises the following steps: determining a correction limited graph from original correction graphs; wherein the correction limited pattern is a pattern which triggers edge placement error limitation, and the original correction pattern is a pattern obtained after first optical proximity correction is carried out on the photoetching design pattern; determining a to-be-corrected graph in the photoetching design graph based on the position of the correction limited graph in the original correction graph; performing second optical proximity correction on the to-be-corrected graph to obtain a target corrected graph; and processing the original correction graph based on the target correction graph to obtain a mask graph. According to the mask pattern, the influence of edge placement error limitation on the correction process can be eliminated, the correction precision of the photoetching design pattern after optical proximity correction is improved, the abnormities of narrowing, retraction and the like of the photoetching pattern are improved, the process window is improved, and the process risk is reduced.

A method of fabricating a semiconductor device includes determining, based on first data including measurement data associated with formation of geometric features using a first mask pattern and second data characterizing deviations in the formation of the geometric features using the first mask pattern, third data that characterizes contributing factors to the deviations. The third data is determined utilizing at least one machine learning algorithm. The method calibrates an optical proximity correction model based on the third data and uses the calibrated model to tune an optical proximity correction process to compute adjustments to mask features of the first mask pattern to form a second mask pattern that compensates for at least a portion of the deviations in the formation of the geometric features using the first mask pattern. The method includes forming the geometric features in a semiconductor layer utilizing a photolithographic mask device having the second mask pattern.

The invention relates to the field of integrated circuit manufacturing, in particular to an optical proximity correction method and device. Determining a target wafer grid image according to a preset grid size and the target wafer pattern; taking the target wafer pattern as a current mask pattern; inputting the current mask pattern into a pre-trained three-dimensional optical proximity correction model, and obtaining an emulational wafer grid image with the assistance of a grid size; calculating an edge height error corresponding to each edge section; judging whether the edge height error exceeds a preset adjustment threshold value or not; when the edge height error exceeds a preset adjustment threshold value, adjusting the position of each edge section in the corresponding normal direction according to the edge height error to obtain an updated current mask pattern; and the step 4 to the step 7 are cycled until the edge height error does not exceed the adjustment threshold value. According to the invention, the defects of photoresist height loss and the like are reduced, and the yield of finished products is improved.

The invention discloses a correction method for a photoetching key size, and aims to solve the problem that the photoetching key size is not uniform due to different substrate pattern densities. The method comprises the following steps: acquiring substrate pattern information of a wafer to be photoetched, and dividing the surface of a substrate into at least two regions with different substrate pattern densities according to the density of substrate patterns; and then, aiming at the substrate pattern density of each region, calculating and applying different optical proximity correction values to the mask plate pattern corresponding to each region of the current photoetching layer, so as to adjust the key size of the mask plate pattern. Through the differentiated optical proximity correction, the actual photoresist critical dimensions of the current photoetching layer after development in regions with different substrate densities tend to be consistent, so that the uniformity of the photoetching critical dimensions and the process stability are improved, and the method is particularly suitable for the process level with limited use or poor effect of an anti-reflection layer.

The present application discloses a double pattern exposure photomask correction method, a photomask correction device and a layout machine learning model training method. The double pattern exposure photomask correction method includes the following steps. A photomask layout target image is obtained. The photomask layout target image is decomposed into two photomask layout sub-images. The photomask layout sub-images overlap in a connection area. A layout machine learning model analyzes the size of the connection area according to the photomask layout target image. The layout machine learning model is established according to a three-dimensional information after etching. An optical proximity correction program is performed on the photomask layout sub-images.

A mask layout optical proximity correction (OPC) method includes determining a target pattern to be formed on a substrate, simulating a photomask layout based on the target pattern, applying a bias to the simulated photomask layout, thereby correcting the photomask layout into a first modeling layout, and selecting one of control parameters obtained through modeling using a layout of a split mask, thereby deforming the first modeling layout into a second modeling layout, and checking whether or not there is a mask rule check (MRC) violation, based on the second modeling layout.