1082 results about "Optical proximity correction" patented technology

A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

A technique for determining, without having to perform optical proximity correction, when the result of optical proximity correction will fail to meet the design requirements for printability. A disclosed embodiment has application to a process for producing a photomask for use in the printing of a pattern on a wafer by exposure with optical radiation to optically image the photomask on the wafer. A method is set forth for checking the printability of a target layout proposed for defining the photomask, including the following steps: deriving a system of inequalities that expresses a set of design requirements with respect to the target layout; and checking the printability of the target layout by determining whether the system of inequalities is feasible.

An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.

A mask for transferring a pattern for portion of a magnetic recording transducer is disclosed. The masks includes one corner corresponding to an angle of more than ninety degrees and less than one hundred eighty degrees. The mask also includes at least one rectangular serif residing at the corner.

An optical mask for providing a pattern for portion of an electronic device, such as a magnetic recording transducer, is disclosed. The optical mask includes a device feature and at least one detached correction feature. The device feature includes a corner corresponding to a device corner of the pattern. The device corner has an angle of greater than zero degrees and less than one hundred eighty degrees. The at least one detached correction feature resides in proximity to but is physically separated from the corner. Each of the at least one detached correction feature is sub-resolution.

An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as to equalize the light intensity distribution of the primary mask.

Methods and systems for inspecting a reticle are provided. In an embodiment, a method may include forming an aerial image of the reticle using a set of exposure conditions. The reticle may include optical proximity correction (OPC) features. The method may also include detecting defects on the reticle by comparing the aerial image to a reference image stored in a database. The reference image may be substantially optically equivalent to an image of the reticle that would be printed on a specimen by an exposure system under the set of exposure conditions. The reference image may not include images of the OPC features. Therefore, a substantial portion of the defects include defects that would be printed onto the specimen by the exposure system using the reticle under the set of exposure conditions. The method may also include indicating the defects that are detected in critical regions of the reticle.

A circuit layout methology is provided for eliminating the extra processing time and file-space requirements associated with the optical proximity correction (OPC) of a VLSI design. The methodology starts with the design rules for a given manufacturing technology and establishes a new set of layer-specific grid values. A layout obeying these new grid requirements leads to a significant reduction in data preparation time, cost, and file size. A layout-migration tool can be used to modify an existing layout in order to enforce the new grid requirements.

An automated design for manufacturability platform which provides integrated physical verification and manufacturing enhancement operations. The platform uses an efficient data structure capable of handling and manipulating both layout circuit and geometry characteristics, which permits a wide range of operations such as timing analysis, design-rule checking and optical proximity corrections on a single platform. This feature eliminates the need to translate layout representations between various tools without the requirement of using a common database. Moreover, the platform's common user interface enables encapsulated information exchange between the design and the manufacturing teams, permiting early consideration of manufacturing distortion or enhancement impact on circuit performance.

A system and method are provided for analyzing layout patterns via simulation using a lithography model to characterize the patterns and generate rules to be used in rule-based optical proximity correction (OPC). The system and method analyze a series of layout patterns conforming to a set of design rules by simulation using a lithography model to obtain a partition of the pattern spaces into one portion that requires only rule-based OPC and another portion that requires model-based OPC. A corresponding hybrid OPC system and method are also introduced that utilize the generated rules to correct an integrated circuit (IC) design layout which reduces the OPC output complexity and improves turnaround time.

Systems, methodologies and technologies for the analysis and transformation of integrated circuit layouts using situations are disclosed. A method for transforming an integrated circuit (IC) layout includes recognizing shapes within the IC layout, identifying features for each of the shapes and extracting situations for the respective features. Extracted situations can be used to improve optical proximity correction (OPC) of the IC layout. This improved OPC includes extracting the situations, simulating the situations to determine a set of the situations identified for modification based on failing to satisfy a desired OPC tolerance level, modifying the set of situations to improve satisfaction of the desired OPC tolerance level, and reintegrating the modified set of situations into the IC layout. Extracted situations can also be used to improve aerial image simulation of the IC layout. This improved aerial image simulation includes extracting the situations, simulating a subset of the situations to determine aerial images of the subset, and tiling the subset of situations to form a larger aerial image. Extracted situations can further be used to improve density analysis of the IC layout. This improved density analysis includes extracting the situations for a window of the IC layout, removing overlap from the window based on the extracted situations, calculating a density for each of the situations, and calculating a density for the window based on the density for each of the situations.

An optical proximity correction (OPC) based integrated circuit design system and method introduce a variable rule in which rules are specified in terms of multiple correction actions that yield acceptable results. This category of rules provides more degrees of freedom in actual application so that the rule-based OPC tool can intelligently select the proper valid rule that minimizes the OPC complexity or meets other objectives.

A computer implemented method for OPC includes: storing an improper OPC pattern and a corrective treatment for the improper OPC pattern in a library storage medium; reading a layout pattern; and matching the layout pattern with the improper OPC pattern stored in the library storage medium.