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5521 results about "Lithographic artist" patented technology

The printing is from a stone (lithographic limestone) or a metal plate with a smooth surface. It was invented in 1796 by German author and actor Alois Senefelder as a cheap method of publishing theatrical works. Lithography can be used to print text or artwork onto paper or other suitable material.

Electrical conductors formed from mixtures of metal powders and metallo-organic decomposition compounds

The present invention relates to a thick film formed of a mixture of metal powders and metallo-organic decomposition (MOD) compounds in an organic liquid vehicle and a process for advantageously applying them to a substrate by silk screening or other printing technology. The mixtures preferably contain metal flake with a ratio of the maximum dimension to the minimum dimension of between 5 and 50. The vehicle may include a colloidal metal powder with a diameter of about 10 to about 40 nanometers. The concentration of the colloidal metal in the suspension can range from about 10 to about 50% by weight. The MOD compound begins to decompose at a temperature of approximately about 200 DEG C. to promote consolidation of the metal constituents and bonding to the substrate which is complete at temperatures less than 450 DEG C. in a time less than six minutes. The mixtures can be applied by silk screening, stencilling, gravure or lithography to a polymer-based circuit board substrate for producing rigid and flexible printed wiring boards in a single operation with negligible generation of hazardous wastes. The same mixtures can be used in place of solder to assemble circuits by bonding electrical components to conductors as well as to make the conductors themselves.

Process for making and programming and operating a dual-bit multi-level ballistic flash memory

An fast program, ultra-high density, dual-bit, multi-level flash memory process, which can be applied to a ballistic step split gate side wall transistor, or to a ballistic planar split gate side wall transistor, which enables program operation by low voltage requirement on the floating gate during program is described. Two side wall floating gates are paired with a single word line select gate, and word lines are arranged to be perpendicular both the bit lines and control gate lines. Two adjacent memory cells on the same word line do not require an isolation region. Also, the isolation region between adjacent memory cells sharing the same bitline is defined by the minimum lithography feature, utilizing a self align fill technique. Adjacent memory cells on the same word line share bitline diffusion as well as a third poly control gate. Control gates allow program and read access to the individual floating gate. In addition to the dual-bit nature of the cell, density can be even further improved by multi-level storage. In one embodiment, the dual multi-level structure is applied to the ballistic step split gate side wall transistor. In a second embodiment, the dual multi-level structure is applied to the ballistic planar split gate side wall transistor. Both types of ballistic transistors provide fast, low voltage programming. The control gates are used to override or suppress the various threshold voltages on associated floating gates, in order to program to and read from individual floating gates. The targets for this non-volatile memory array are to provide the capabilities of high speed, low voltage programming (band width) and high density storage.
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