235 results about "Maskless lithography" patented technology

The invention is a seamless projection lithography system that eliminates the need for masks through the use of a programmable Spatial Light Modulator (SLM) with high parallel processing power. Illuminating the SLM with a radiation source (1), which while preferably a pulsed laser may be a shuttered lamp or multiple lasers with alternating synchronization, provides a patterning image of many pixels via a projection system (4) onto a substrate (5). The preferred SLM is a Deformable Micromirror Device (3) for reflective pixel selection using a synchronized pulse laser. An alternative SLM is a Liquid Crystal Light Valve (LCLV) (45) for pass-through pixel selection. Electronic programming enables pixel selection control for error correction of faulty pixel elements. Pixel selection control also provides for negative and positive imaging and for complementary overlapping polygon development for seamless uniform dosage. The invention provides seamless scanning by complementary overlapping scans to equalize radiation dosage, to expose a pattern on a large area substrate (5). The invention is suitable for rapid prototyping, flexible manufacturing, and even mask making.

A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.

Provided is a method and system for developing a lithographic mask layout. The lithographic mask layout is adapted for configuring an array of micro-mirrors in a maskless lithography system. The method includes generating an ideal mask layout representative of image characteristics associated with a desired image. Next, an equivalent mask is produced in accordance with an average intensity of the ideal mask layout.

A versatile maskless patterning system with capability for selecting rapidly among a plurality of projection lenses mounted on a turret. This provides the ability to rapidly select multiple choices for resolution and enables optimization of the combination of the imaging resolution and exposure throughput, making possible cost-effective fabrication of microelectronics packaging products. A preferred embodiment uses a digital micromirror device array spatial light modulator as a virtual mask. Another preferred embodiment use multiple closely spaced digital micromirror device array spatial light modulators to enhance throughput.

The invention discloses a method for using gray scale compensation to improve photo-etching exposure energy uniformity, with wide application in non-mask photo-etching machine which uses spatial light modulator as image generator. The non-mask photo-etching machine provided with a spatial light modulator as image generator uses the gray scale modulation of the spatial light modulator, according to the image light strength distribution information of photo-etching objective lens collected by a CCD to modulate the light output of each pixel unit of the spatial light modulator to change the emission light field distribution on the image plane of the photo-etching objective lens. The invention uses the light strength distribution measured in the integration of some time or uses the energy distribution of the light emitted from each image plane position in a certain exposure time to make the exposure energy of each position uniform on the image plane. The invention can effectively reduce the design and assembly hardness of the lighting system of traditional photo-etching machine and reach better exposure energy uniformity.

Imaging systems that use a spatial light modulator (SLM), such as maskless lithography systems using a digital micromirror device (DMD), suffer from low throughput at high resolution because of the increase in the number of pixels to be imaged. A possible solution to this problem is provided by using multiple SLMs. However, packaging multiple SLMs on a suitable base is inefficient because, in an SLM, surrounding the active region, a large inactive region is required for the chip kerf and the connector fan-in; these inactive regions thus prevent close packing of the SLMs. This invention enables close packing of a large number of SLMs by arranging them in twin planes, such that the kerf and fan-in regions overlap substantially. Variations in the optical conjugate distances of different SLMs caused by the twin planarity are eliminated by incorporation of a twin-pane compensating mirror array that corresponds to the SLM array, and introduces a pathlength difference between different mirrors that is complementary to the pathlength difference between corresponding SLM chips. Depth-of-focus problems are thus eliminated. The invention enables significant throughput enhancement, up to 82%, in maskless lithography systems.

A maskless lithography system and method to expose a pattern on a wafer by propagating a photon beam through a waveguide on a substrate in a plane parallel to a top surface of the wafer.

In a maskless lithography apparatus light deflected by a patterning array out of a path towards a substrate is directed onto a detector that detects malfunctions of the patterning array. If the patterning array is of a type which selectively diverts radiation in order to pattern the beam, the detector can use the radiation that is diverted out of the beam. Alternatively, a second beam of radiation, additional to the exposure radiation, can be provided.

In a scanned-spot-array lithography system, a modulated array of radiant-energy source spots is imaged by a projection lens onto a printing surface, which is scanned in synchronization with the spot modulation to print a synthesized, high-resolution raster image. Similarly, in a scanned-spot-array microscopy system, an array of radiant-energy source spots is imaged by a projection lens onto an inspection surface, and radiation reflected from or transmitted through the image spots is collected and detected to acquire a synthesized, high-resolution raster image of the surface. In either case, the spot-generation optics can be configured to counterbalance and neutralize imperfect imaging characteristics of the projection lens, enabling perfectly flat-field, distortion-free, and aberration-free point imaging of the entire spot array. The spot-generation optics can also be further configured to achieve narrow-band achromatization of the optical system, and to optimally control the intensity and polarization characteristics of the image-plane radiation.

The mask-less lithography system has a converter that includes an array of light controllable electron sources. Each electron source is arranged for converting light into an electron beam and has an activation area. Individually controllable light sources are included where each light source is arranged for activating one electron source. A Controller controls each light source individually and each electron beam is focused on an object plane with a diameter smaller than the diameter of an individually controllable light source.

An apparatus having a plurality of arrayed MEMS devices, each device having a parallel-plate actuator and a reflective plate, both of which are mechanically coupled to a flexible beam attached between two anchors. Advantageously, the use of parallel-plate actuators in the apparatus alleviates stringent requirements for the alignment of lithographic masks employed in the fabrication process. In one embodiment, each flexible beam has a relatively small thickness and a relatively large length to effect a relatively large displacement range for the corresponding reflective plate. Movable electrodes of different parallel-plate actuators are configured to act as an electrical shield for the flexible beams, which reduces inter-device crosstalk in the apparatus. Reflective plates of different MEMS devices form a segmented mirror, which is suitable for adaptive-optics and/or maskless lithography applications.

A method and apparatus to create two dimensional and three dimensional structures using a maskless photolithography system that is semi-automated, directly reconfigurable, and does not require masks, templates or stencils to create each of the planes or layers on a multi layer two-dimensional or three dimensional structure. In an embodiment, the pattern generator comprises a micromirror array wherein the positioning of the mirrors in the micromirror array and the time duration of exposure can be modulated to produce gray scale patterns to photoform layers of continuously variable thickness. The desired pattern can be designed and stored using conventional computer aided drawing techniques and can be used to control the positioning of the individual mirrors in the micromirror array to reflect the corresponding desired pattern. A fixture for mounting of the substrate can be incorporated and can allow the substrate to be moved three dimensions. The fixture can be rotated in one, two, or three directions.

A lithographic system is provided in which an extent of overlap between pattern sections is adjusted in order to match a size of a pattern section to a size of a repeating portion of the pattern to be formed.

A method and system for exposing a target according to pattern data in a maskless lithography machine generating a plurality of exposure beamlets for exposing the target. The method comprises providing input pattern data in a vector format, rendering and quantizing the input pattern data to generate intermediate pattern data, and re-sampling and re-quantizing the intermediate pattern data to generate output pattern data. The output pattern data is supplied to the lithography machine, and the beamlets generated by the lithography machine are modulated on the basis of the output pattern data.

The invention provides a synchronous pulse exposure method for maskless lithography equipment. The maskless lithography equipment adopts an exposure imaging system consisting of a UV (ultraviolet) laser or UV LED light source, a DMD (digital micro-mirror device) and an optical lens; the synchronous pulse exposure method is characterized in that a series of pulse synchronization signals are generated, the DMD and the UV laser or UV LED light source are triggered to synchronously work, and the pulse interval of the pulse synchronization signals depends on the replacement or refreshing cycle of the DMD to graphs; a digital laser direct-writing system comprises an upper computer in charge of outputting digital lattice patterns and the series of pulse synchronization signals to the exposure imaging systems, and one or more exposure imaging systems arranged side by side. According to the method, a synchronous control problem of parts of the lithography equipment is solved, more effective and reasonable exposure and refreshing time is convenient to design, and the shortcomings of low production capacity and poor system adaptability of a conventional exposure machine are overcome.

The invention pertains to a maskless lithography system for transferring a pattern onto a surface of a target, comprising at least one beamlet optical unit for generating a plurality of beamlets, at least one measuring unit for measuring properties of each beamlet, at least one control unit for generating and delivering pattern data to said beamlet optical unit, said control unit being operationally coupled to said measuring unit for identifying invalid beamlets which have a measured property value outside a predefined range of values for said property at least one actuator for inducing a shift of said beamlet optical unit and said target with respect to one another, wherein said actuator is operationally coupled with said control unit, said control unit determining said shift, positioning valid beamlets at the position of said invalid beamlets, thus replacing said invalid beamlets with valid beamlets.

The present invention provides methods and apparatus for accomplishing a strong phase shift direct write lithography process using reconfigurable optical mirrors. A maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used to generate strong phase shift optical patterns which are directed onto a photoimageable layer of a substrate in order to facilitate pattern transfer. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement.

Micromirrors and micromirror arrays described herein are useful, for example in maskless photolithography systems and methods and projection display devices and methods. According to one aspect, the micromirrors comprise a polymer structural layer and a reflective dielectric multilayer for selective reflection and/or redirection of incoming electromagnetic radiation. According to another aspect, incorporation of a reflective dielectric multilayer allows for use of polymer structural materials in micromirrors and prevents damage to such polymer materials due to excessive heating from absorption of electromagnetic radiation, as the reflective dielectric multilayers are highly reflective and minimize heating of the micromirror components. According to yet a further aspect, top down fabrication methods are described herein for making a micromirror comprising a polymer structural layer and a reflective dielectric multilayer.

A method and tool for conducting charged-particle beam direct write lithography is disclosed. A disclosed method involves condensing an initial design file down to a set of profiles and a pattern of relative locations to form a formatted pattern file. The formatted pattern file is adjusted to accommodate desired pattern corrections. Portions of the formatted pattern records are extracted to form data strips that have a plurality of channels with a pattern of profiles and spatial indicators. Data strips are sequentially read to construct a printable pattern of profiles and spatial indicators that specify the locations of the profiles. Additionally, the pattern of profiles are sequentially printed from each data strip onto a substrate to form the desired pattern on the substrate.

A maskless lithography system that writes patterns on an object. The system can include an illumination system, the object, spatial light modulators (SLMs), and a controller. The SLMs can pattern light from the illumination system before the object receives the light. The SLMs can include a leading set and a trailing set of the SLMs. The SLMs in the leading and trailing sets change based on a scanning direction of the object. The controller can transmit control signals to the SLMs based on at least one of light pulse period information, physical layout information about the SLMs, and scanning speed of the object. The system can also correct for dose non-uniformity using various methods.

A method for dynamically registering multiple patterned layers on a substrate (3) comprises: depositing a first layer on the substrate; printing a first pattern (20) on the first layer; depositing a second layer on the first pattern; and printing a second pattern on the second layer while dynamically detecting the first pattern to align the second pattern with the first pattern.

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.