4 results about "Maskless lithography" patented technology

A method includes generating pattern data including common chip design data and one or more bit spaces or place holders reserved for non-common chip design data or information related to the non-common chip design data. The method includes introducing the non-common chip design data or information related to the non-common chip design data into the one or more bit spaces or place holders of the pattern data before streaming the pattern data to the maskless pattern writer. The common chip design data defines a common design layout part of an electronic device to be created on a wafer using the maskless pattern writer. The non-common chip design data defines a non-common design layout part of the electronic device to be created on the wafer using the maskless pattern writer, the non-common design layout part being different from other electronic devices created on the wafer.

The application relates to the technical field of semiconductors, and provides a maskless photolithography method and a photolithography system. The maskless photolithography method comprises the following steps: constructing a light source array formed by a plurality of independently controlled light emitting units arranged in a two-dimensional array; acquiring a target pattern, decomposing the target pattern into a pixelated instruction set, and the pixelated instruction set comprises light intensity modulation signals corresponding to each light emitting unit; and controlling the light intensity of each light emitting unit based on the pixelated instruction set to form an optical pattern, wherein the optical pattern is proportional to the target pattern. The method has high flexibility, low cost and high efficiency.

This invention relates to the field of micro-nano optics, and particularly to a method for fabricating a vortex optical lens based on the ARDE effect of deep silicon etching, and the vortex optical lens itself. The fabrication method includes: designing a mask pattern with a gradient distribution of aperture size; forming a patterned mask on a substrate using maskless photolithography; performing deep silicon etching using the mask as a barrier layer, utilizing the ARDE effect to increase the etching rate with increasing aperture size, and directly forming a spiral phase structure on the silicon substrate through single-step etching. This invention also discloses the vortex optical lens and lens array fabricated by this method. This invention utilizes the ARDE effect to achieve single-step three-dimensional forming, resulting in small step height error, high contour accuracy, and excellent sidewall perpendicularity; it has a wide adjustable range of topological charge, high optical efficiency, and a high array fill factor; the process is compatible with CMOS processes, supports wafer-level mass production, and is low-cost and has a short cycle time, making it widely applicable in fields such as optical communication, quantum information, and super-resolution imaging.