12 results about "Maskless lithography" patented technology

In one embodiment, a method of fabricating a device having at least two features of different heights includes the steps of: depositing a photoresist on a substrate; determining a topographic pattern for at least two features of the device; determining an exposure pattern for at least two features of the device; exposing a first region of the photoresist to a first dose of light, the first region corresponding to a first feature of the at least two features; exposing a second region of the photoresist to a second dose of light different from the first dose of light, the second region corresponding to a second feature of the at least two features; and developing the photoresist.

Systems and methods are provided for improving the fabrication of silicon pillar arrays and porous top electrodes for trace vapor preconcentration and partial separation. In an embodiment, the silicon pillar arrays are fabricated using photolithography or maskless photolithography combined with a dry etching process. Importantly, this process is more reproducible and scalable than the past fabrication method and yields better device performance.

A method includes generating pattern data including common chip design data and one or more bit spaces or place holders reserved for non-common chip design data or information related to the non-common chip design data. The method includes introducing the non-common chip design data or information related to the non-common chip design data into the one or more bit spaces or place holders of the pattern data before streaming the pattern data to the maskless pattern writer. The common chip design data defines a common design layout part of an electronic device to be created on a wafer using the maskless pattern writer. The non-common chip design data defines a non-common design layout part of the electronic device to be created on the wafer using the maskless pattern writer, the non-common design layout part being different from other electronic devices created on the wafer.

The application relates to the technical field of semiconductors, and provides a maskless photolithography method and a photolithography system. The maskless photolithography method comprises the following steps: constructing a light source array formed by a plurality of independently controlled light emitting units arranged in a two-dimensional array; acquiring a target pattern, decomposing the target pattern into a pixelated instruction set, and the pixelated instruction set comprises light intensity modulation signals corresponding to each light emitting unit; and controlling the light intensity of each light emitting unit based on the pixelated instruction set to form an optical pattern, wherein the optical pattern is proportional to the target pattern. The method has high flexibility, low cost and high efficiency.

Various embodiments relate to forming particles using undercooled metal particles in response to focused low power laser light. Particle growth can be initiated by utilizing the metastable and liquid nature of the particles, allowing for surface instability promoted by the laser light to induce liquid flow to translate to a neighboring particle. This event can cascade radially leading to accumulation of the liquid metal at the epicenter. The grown solidified particle size can be varied by using different power, exposure time, or working distance. Once the liquid has accumulated into a single region, it eventually solidifies either through homogeneous or heterogeneous nucleation to give a solid particle of larger size than the original. Such a method can be used to print patterns on a surface in four dimensions, where the fourth dimension (4D) is attained through gradient in size of the particles made. Additional systems and methods are disclosed.

Various embodiments herein relate to methods of using maskless lithography to form layers. In these embodiments, the method implements a dose-varying staircase that divides a geometry into overlay portions. The overlay portions can include different doses for each portion to achieve control of the taper. The taper can be achieved by operating the geometric "mask data" into different dose overlay portions controlled by a pixel blending (PB) exposure technique. To perform the methods described herein, a maskless lithography tool is used. The maskless lithography tool includes a controller that performs software-based "mask data" operations. Because the method is performed masklessly by software without the additional mask cost and manufacturing time, there is greater flexibility to adjust the taper angle and / or photoresist thickness residuals of multi-tone / grey-tone mask features, which is an advantage over traditional lithography methods that use masks.

The invention provides a method for optimizing the line width uniformity of a maskless photoetching machine and a photoetching system.The method comprises the steps that firstly, through exposure and measurement of a specific test pattern, line width distribution data of all positions in an exposure area are obtained; calculating a photoetching data adjustment amount required for compensating uneven energy distribution on the basis of the data; and finally, digital adjustment of local exposure energy is realized by adjusting gray values of corresponding pixels in photoetching graphic data of a target product, so that line width errors caused by characteristics or drifting of an optical system are compensated. Under the condition that hardware optical setting does not need to be adjusted, the uniformity of the pattern line width can be effectively improved, and the process stability and the equipment adaptability are improved.

The invention discloses a metamaterial honeycomb and a preparation method thereof, and relates to the technical field of honeycombs, and the preparation method comprises the steps: S1, preparing a copper circuit pattern on a PI film through laser maskless photoetching; s2, node glue is applied to related positions of the copper circuit pattern; s3, combining the PI film with the glue layer coated with the node glue in a stacking hot-pressing manner; s4, curing the cellular board formed by the node glue; s5, stretching and shaping the honeycomb plate to form a honeycomb shape; and S6, carrying out gum dipping and curing on the stretched and shaped honeycomb to obtain the metamaterial honeycomb. According to the method, the idea of patterning first and then integrating the honeycomb is adopted, a traditional post-etching method is replaced, meanwhile, a laser direct writing method is used for replacing a traditional conductive ink spraying mode, the technical problems that honeycomb hole grid wall micropatterns are unstable, combination is poor and the like can be effectively solved, and the method has the advantages of being convenient to implement and high in conductive reliability; and the hole walls of the honeycomb grids have the advantage of stable microstructure patterns.

This invention relates to the field of micro-nano optics, and particularly to a method for fabricating a vortex optical lens based on the ARDE effect of deep silicon etching, and the vortex optical lens itself. The fabrication method includes: designing a mask pattern with a gradient distribution of aperture size; forming a patterned mask on a substrate using maskless photolithography; performing deep silicon etching using the mask as a barrier layer, utilizing the ARDE effect to increase the etching rate with increasing aperture size, and directly forming a spiral phase structure on the silicon substrate through single-step etching. This invention also discloses the vortex optical lens and lens array fabricated by this method. This invention utilizes the ARDE effect to achieve single-step three-dimensional forming, resulting in small step height error, high contour accuracy, and excellent sidewall perpendicularity; it has a wide adjustable range of topological charge, high optical efficiency, and a high array fill factor; the process is compatible with CMOS processes, supports wafer-level mass production, and is low-cost and has a short cycle time, making it widely applicable in fields such as optical communication, quantum information, and super-resolution imaging.

A system (100) for synthesizing copolymerized molecules on a substrate (10) includes: a light source (20) emitting exposure light; a programmable light direction unit (30) for redirecting the light in specific patterns; a substrate holder (40); a reagent delivery system (50) for dispensing reagents; and a lateral movement mechanism (60) for generating relative movement between the light direction unit and the substrate holder. A controller (70) controls: i) reagent dispensing; ii) light exposure in a first pattern; iii) relative movement and adjustment of the light direction unit to a second pattern; and iv) subsequent exposure in the second pattern.

Embodiments of the present disclosure relate to a system, software application, and method of a lithography process that updates one or more of a mask pattern, a maskless lithography device parameter, a lithography process parameter using a document readable by each component of a lithography environment. The document readable by each component of the lithography environment stores and shares textual information and facilitates communication between components of the lithography environment to update a mask pattern corresponding to a pattern to be written, calibrate a maskless lithography device of the lithography environment, and correct a process parameter of the lithography process to accurately write the mask pattern on successive substrates.

The application belongs to the technical field of maskless lithography, and particularly relates to a kind of ultraviolet lithography projection objective lenses for high-density PCB, LCD and MEMS design and manufacture. It is applied to the projection of mixed or monochromatic ultraviolet lithography light source, including the first lens group G1, aperture diaphragm, second lens group G2, third lens group G3 and fourth lens group G4 consistent with the optical axis from the object plane to the image plane; the first lens group G1 has positive focal power; the second lens group G2 has positive focal power; the third lens group G3 has negative focal power; the fourth lens group G4 has positive focal power; wherein the ultraviolet lithography projection objective lens is object, image double-telecentric structure and does not include aspheric surface. The application proposes a kind of ultraviolet lithography projection objective lens for ultraviolet SLM lithography with simple structure and good performance, which can work in 365nm-405nm mixed or monochromatic light source, and has the advantages of simple structure, low lens processing cost, good aberration and no aspheric surface.