37 results about "Plasmon excitation" patented technology

The invention provides new types of plasmon-driven growth mechanism for silver nanostructures involving the fusion of triangular nanoprisms. This mechanism, which is plasmon excitation-driven and highly cooperative, produces bimodal particle size distributions. In these methods, the growth process can be selectively switched between bimodal and unimodal distributions using dual beam illumination of the nanoparticles. This type of cooperative photo-control over nanostructure growth enables synthesis of monodisperse nanoprisms with a preselected edge length in the 30–120 nm range simply by using one beam to turn off bimodal growth and the other (varied over the 450–700 nm range) for controlling particle size.

The present disclosures are provided with: a lightbulb unit (10) that has a substrate (22) that transmits light from a plurality of optical connection mechanisms (23) that switch the transmission and the blocking of light from a light-emitting element (25); and a plasmon coupling unit (11) that generates plasmon coupling by means of light entering from the light-emitting element (25) and that is disposed within the lightbulb unit (10). The plasmon coupling unit (11) has: a carrier generation layer (15) wherein a carrier is generated by means of light entering from the light-emitting element (25); and a plasmon excitation layer (17) that has a higher plasma frequency than the frequency of light arising when exciting the carrier generation layer (15) with the light of the light-emitting element (25). A wavevector conversion layer (19) that converts surface plasmons or light generated by the plasmon excitation layer (17) into light at a predetermined angle of emergence, and then radiates said light is provided on a substrate (22). The plasmon excitation layer (17) is sandwiched between a first dielectric layer (16) and a second dielectric layer (18).

Light source layer (4) includes substrate (10) and a pair of layers, namely, hole-transport layer (11) and electron-transport layer (13), formed on substrate (10). Directional control layer (5) includes plasmon excitation layer (15) stacked on a side of light source layer (4), which is opposite to the side of substrate (10) of light source layer (4), and which has a plasma frequency higher than a frequency of light output from light source layer (4), and wave vector conversion layer (17) stacked on plasmon excitation layer (15), which converts light incident from plasmon excitation layer (15) into light having a predetermined exit angle to output the light. Plasmon excitation layer (15) is sandwiched between low dielectric constant layer (14) and high dielectric constant layer (16).

Disclosed is an optical element that includes: a light guide body into which light from a light-emitting element enters; carrier generation layer (6) formed in the light guide body, in which carriers are generated by the light from the light guide body; plasmon excitation layer (8) stacked on carrier generation layer (6), which has a plasma frequency higher than the frequency of light generated when carrier generation layer (6) is excited by the light from the light-emitting element; and wave vector conversion layer (10) stacked on plasmon excitation layer (8), which converts light incident from plasmon excitation layer (8) into light having a predetermined exit angle to output the light. Plasmon excitation layer (8) is sandwiched between low dielectric constant layer (7) and high dielectric constant layer (9).

Disclosed is an optical element that includes: carrier generation layer (16) in which carriers are generated by light from light guide body (12) into which light from a light-emitting element enters; plasmon excitation layer (17) that has a plasma frequency higher than the frequency of light generated when carrier generation layer (16) is excited by light from the light-emitting element; and wave vector conversion layer (18) that converts surface plasmon generated by plasmon excitation layer (17) light having a predetermined exit angle to output the light. Plasmon excitation layer (17) is sandwiched between two layers having dielectric properties. The effective dielectric constant of the incident side portion of plasmon excitation layer (17) including an entire structure stacked above light guide body (12) side is higher than that of the exit side portion of plasmon excitation layer (17) including the entire structure stacked above wave vector conversion layer (18) side and the medium in contact with wave vector conversion layer (18).

The invention discloses a heterojunction solar cell with ultra-broadband absorption. The specific structure includes a transparent conductive front electrode, a two-dimensional nanocone array superstructure, a down-conversion nanostructure, a plasmon light-trapping structure, and an organic conductive polymer layer. , a semiconductor material layer and a back electrode. The cell uses down-conversion nanostructures to achieve photon cutting of ultraviolet light, converting ultraviolet light into visible light; using a two-dimensional nanocone array superstructure with tip plasmon excitation effect, and plasmon light trapping structure, in visible light The wavelength band enhances the light absorption of the heterojunction formed by the organic conductive polymer and the semiconductor; and uses the heterojunction formed by the two-dimensional nanocone array superstructure and the semiconductor to make the device absorb and convert infrared light smaller than the semiconductor band gap, and enhance the battery infrared The spectral response within the band. The battery has high photoelectric conversion efficiency in the ultraviolet to infrared ultra-wide spectrum range, and has the advantages of low cost, simple process, high specific efficiency and the like.

The invention discloses a plasmon resonant wavelength division multiplexer which is composed of a metal film, one incident waveguide, more than two output waveguides and more than two resonant cavities. The incident waveguide, the output waveguides and resonant cavities are formed in the metal film in a hollowed way, the amount of the output waveguides is the same with that of the resonant cavities, and one output waveguide corresponds to one resonant cavity. The resonant cavities are arranged in the two sides and / or rear end of the incident waveguide and the output waveguides are arranged inthe other side of the resonant cavities to form the multiplexer, one metal film is additionally arranged in the internal of each resonant cavity so that the internal of the resonant cavity can form anF-P cavity, and surface plasmon SPP and the resonant cavities realize resonant coupling; thus, a resonant coupling effect between the surface plasmon SPP and the resonant cavities is utilized, and the sizes of the metal films in the resonant cavities are adjusted to separate multiple paths of plasmon signals and adjust the wavelengths of different channels; and the coupling distance can be changed to realize a specific coupling effect.

The invention discloses a surface plasmon excimer electrically-induced excitation source with a medium-metal near field coupling structure. The surface plasmon excimer electrically-induced excitation source comprises a substrate, semiconductor quantum well epitaxial layer, a metal layer and a coupling output structure. The semiconductor quantum well epitaxial layer is loaded on the surface of the substrate. The metal layer is loaded on the surface of the semiconductor quantum well epitaxial layer. The coupling output structure is located in the metal layer. The invention further discloses a manufacturing method of the surface plasmon excimer electrically-induced excitation source. The method includes the steps that the semiconductor quantum well epitaxial layer is grown on the substrate; a device unit is etched on the grown semiconductor quantum well epitaxial layer; the metal layer is deposited on the etched device unit; the coupling output structure is manufactured in the deposited metal layer. According to the surface plasmon excimer electrically-induced excitation source, the semiconductor quantum well material is adopted to serve as an active medium, based on the near field coupling principle, the quantum efficiency is high, the light emitting wavelength range is wide, the excitation efficiency is high, the manufacturing process is simple, integration is conducted conveniently, and the surface plasmon excimer electrically-induced excitation source and the manufacturing method have great research value and application prospects.