285 results about "Dual beam" patented technology

The invention discloses a low-profile dual-circularly polarized wave beam scanning folding reflection array antenna. The low-profile dual-circularly polarized wave beam scanning folding reflective array antenna comprises a lower reflective array antenna and an upper circularly polarized selection metasurface. A circular polarization plane feed source is integrated in the middle of the reflective array antenna, and beam deflection is achieved. The circular polarization selection metasurface introduces opposite phase gradients to a left-hand circular polarization wave beam and a right-hand circular polarization wave beam through spin decoupling, and then introduces opposite wave beam deflection angles. Meanwhile, due to the polarization selection function of the circular polarization selection metasurface, the profile height of the antenna is half of the focal length of a traditional reflective array. By rotating the lower-layer reflective array antenna and the upper-layer circular polarization selection metasurface, the antenna can realize simultaneous + / -42-degree pitch angle scanning and 360-degree azimuth angle scanning of left-hand circular polarization and right-hand circular polarization dual beams, and the aperture efficiency, the axial ratio, the scanning loss and other performances are good. The low-profile dual-circularly-polarized wave beam scanning folding reflection array antenna provided by the invention can realize simultaneous scanning of two circularly-polarized wave beams, and is low in profile, compact in structure, low in cost and novel in function.

The invention relates to a Spin Exchange Relaxation-Free (SERF)-based magnetometer system (100) for detecting ultra- weak magnetic fields, particularly suited for bio¬ sensing applications such as MEG, MCG, and MRI. The system operates at room temperature and includes a VCSEL (101) emitting dual beams tuned to Rubidium-87 transitions, a microfabricated vapor cell (102) with LIAD-based heating (103), and an optical assembly (104) for polarization control. A detection unit (105) converts Faraday rotation into electrical signals, enhanced by lock-in amplification. Magnetic shielding (106), thermal management (107), and relaxation mitigation maintain SERF conditions. A calibration subsystem (109) and embedded machine learning module (110) optimize sensitivity in real time. The compact, cryogen-free architecture enables portable and wearable applications. The invention achieves femtotesla-level sensitivity while overcoming limitations of conventional SQUID-based systems, making it suitable for clinical and field deployments.

According to the SERF magnetic field measuring device closed-loop magnetic compensation method based on double-beam detection, Y-axis direction detection light used for decoupling is added on the basis of X-axis direction detection light, decoupling of three-axis magnetic field signals can be achieved, independent measurement and closed-loop control real-time magnetic compensation of a three-axis magnetic field are achieved, support is provided for further improving compensation precision, and the method is suitable for large-scale popularization and application. Comprising the steps that Y-axis direction detection light penetrating through an alkali metal gas chamber in the Y-axis direction, X-axis direction detection light penetrating through the alkali metal gas chamber in the X-axis direction and pumping light penetrating through the alkali metal gas chamber in the Z-axis direction are arranged in the SERF magnetic field measuring device, the X-axis direction detection light is used for detecting the optical rotation angle, and the Y-axis direction detection light is used for three-axis magnetic field decoupling; the pumping light is used for polarizing atoms in the alkali metal gas chamber; adding a Y-axis calibration signal; controlling the Z-axis coil current to compensate the Z-axis magnetic field according to the Py; controlling the X-axis coil current to compensate the X-axis magnetic field according to the Py; and controlling the Y-axis coil current to compensate the Y-axis magnetic field according to the Px.

The invention relates to the field of textile detection. The invention discloses a detection system for textile defect detection, which comprises a light source arranged on one side of a textile and used for outputting a detection light beam; the light path adjusting assembly is located in a light path from the light source to the textile; the image acquisition device is arranged on the other side and is used for acquiring an irradiated image signal; the angle adjusting device adjusts irradiation and acquisition angles of the light source and the image acquisition device; a reflecting component is arranged on one side of the light source and is controlled by a control switch to reflect a detection light beam to the textile; and the image processing unit is connected with the image acquisition device, analyzes the image signal and outputs a defect detection result. According to the detection system, light and shade contrast of flaw edges is enhanced through double-beam interference, and fine defects are accurately captured in combination with angle adjustment and multi-light-source adaptation. The detection method adjusts parameters in stages, automatically matches the optimal detection angle and light source intensity, and improves the adaptability of complex fabric detection.

The invention provides a dual-mode gravitational acceleration precision measurement system and method based on a light floating effect. According to the system, a 1064nm laser double-beam correlation structure is adopted, a strong focusing light trap is formed in a gravity orthogonal direction, and micron-sized silicon dioxide particles are stably captured. In the absolute measurement mode, the acousto-optic modulator is used for controlling the on-off of the laser, the high-speed position detection module is used for detecting and recording the free falling motion trail of the particles and the displacement amplitude showing the resonance state after re-capturing, and the absolute gravitational acceleration parameter is inverted. In a relative measurement mode, weak focusing 532nm laser is configured along the gravity direction to construct a gravity compensation light trap, and after absolute gravitational acceleration reference measurement is completed, the laser is modulated by an acoustic optical modulator to accurately balance the gravity of particles, so that the particles enter a quasi-balance state. When the external gravitational field changes slightly, the characteristic displacement of the particles in the gravity direction is extracted, and the change of the relative gravitational acceleration can be monitored continuously.

The invention discloses a double-beam laser interference detection device and a detection method, the double-beam laser interference detection device is used for semiconductor etching and thin film process end point detection, and the double-beam laser interference detection device comprises an imaging unit, a detection unit and a reference unit; the detection unit comprises a first emitting part used for emitting detection light rays, and the detection light rays are focused to the wafer through the imaging unit; the first detector outputs a first reflection signal; the reference unit comprises a second emitting part and is used for emitting reference light to the imaging unit, so that the reference light is focused on the semiconductor equipment window; the second detector outputs a second reflected signal. And in the detection process, performing difference calculation on the first reflection signal and the second reflection signal to obtain a light intensity signal after interference elimination, and calculating the etching depth or the film deposition thickness of the wafer according to the light intensity signal after interference elimination. According to the invention, the problem of insufficient accuracy of detection of the wafer etching depth and the thin film deposition thickness end point caused by factors of vibration of semiconductor equipment and unstable environment can be eliminated.

Scalable decentralized redistributors and methods of redistributing signals in accordance with various embodiments of the invention are illustrated. One embodiment includes an array of channels configured to receive and retransmit a signal, where each of a plurality of independently operating channels in the array includes: at least one antenna element; an RF chain configured to apply a time delay to the received signal prior to retransmission; control circuitry configured to control the time delay applied to the received signal by the RF chain; and a reference oscillator. In addition, the array of channels is configured to steer a signal of a first frequency in a first direction and steer a signal of a second frequency in a second direction different from the first direction to create a dual beam redistributor.

The invention relates to the technical field of semiconductor detection, in particular to a method and a system for measuring the thickness of a semiconductor epitaxial layer based on multi-beam interference correction. Acquiring infrared reflection spectrum data of the wafer under different incident angles, and performing double-stage smoothing preprocessing on the data by using a moving least square fitting algorithm; an interference extreme point is accurately identified by adopting a self-adaptive extreme value feature extraction strategy; the method comprises the following steps of: calculating the dynamic refractive index and the initial thickness estimation value of the epitaxial layer, constructing a multi-beam interference intensity distribution model, and finally providing a hybrid nonlinear optimization algorithm to invert the accurate thickness d of the epitaxial layer, thereby overcoming the measurement error caused by neglecting the multi-beam effect and the refractive index change in the traditional double-beam interference, and improving the accuracy of the multi-beam interference. And the precision and the reliability of epitaxial layer thickness measurement are remarkably improved through the combination of data preprocessing and a nonlinear optimization algorithm. The objective of the invention is to solve the problem of how to correct measurement errors caused by multi-beam effect and refractive index change.

The invention relates to the field of quantum measurement, and provides a CPT magnetometer magnetic measurement signal-to-noise ratio improving method and device based on a differential EIT-EIA signal. The CPT magnetometer solves the problem that a traditional CPT magnetometer is low in magnetic measurement signal-to-noise ratio due to the influence of environment temperature noise, laser stability and atomic gas chamber buffer gas. According to the main scheme, the CPT magnetometer comprises a laser generation module, a reference correction module, a differential detection module, a non-magnetic heating module and a signal processing module. The laser generation module generates reference / measurement double beams through the laser and the polarization regulation and control assembly; the reference correction module performs polarization conversion and optical path regulation and control on the reference light; the differential detection module divides the measurement light into two paths by adopting polarization beam splitting, the first path is subjected to polarization state conversion through an interference light path after frequency modulation, the second path is converted into circularly polarized light after optical fiber transmission, the two paths of light are coupled and then enter an atomic gas chamber for interaction, and differential detection is realized through a polarization beam splitting detector; and the non-magnetic heating module accurately controls the temperature of the air chamber by using a non-contact photo-thermal conversion technology.

The present invention relates to an optical system and a method for chromatic confocal spectral-domain optical coherence tomography or for chromatic confocal two-beam interferometry. The optical system comprises a multispectral light source unit configured to generate a plurality of spatially coherent multispectral light beams with spectra having a respective centroid wavenumbers, an achromatic focusing unit configured such that in at least a paraxial region around a common point located on an optical axis at the output of the achromatic focusing unit, the wavefronts of the respective spatially coherent multispectral light beams have different radii of curvatures, a chromatic confocal dual-beam interferometer having an non-zero optical path difference arranged downstream of the multispectral light source unit and a detection unit for detecting light returned from the dual-beam interferometer. The reference arm of the double-beam interferometer is configured to be achromatic and the object arm to have chromatic depth slitting of foci. In the reference arm, a plurality of depth separated reference light spots are formed. In the object arm, a plurality of at least partially colinear and overlapping multispectral stretches of diffraction limited light spots extended in a depth direction of the object arm is formed. The light reflected by a current sharply focused diffraction limited object light spot of each of the multispectral stretches of diffraction limited light spots is combined with a respective reference light spot, is confocally discriminated by a confocal discrimination unit of the detection unit and subsequently detected by at least one spectrometer, evaluation dual-beam interferometer or fast detector detects the confocally discriminated light.

The present invention relates to a dual-beam laser welding device and method, belonging to the field of material processing engineering, and comprising a structured light sensor, a front-side laser control system, a rear-side laser control system, a front-side laser, a rear-side laser, and a galvanometer system; the structured light sensor is arranged at the starting position of the welding joint of the base body, and the front-side laser control system is respectively connected to the structured light sensor and the front-side laser; the rear-side laser control system is respectively connected to the structured light sensor and the rear-side laser; the galvanometer system is arranged on the output optical paths of the front-side laser and the rear-side laser; the rear-side laser and the front-side laser are sequentially arranged along the welding direction; the present invention can achieve high-quality connection of complex structural parts that are difficult to weld by conventional lasers, and achieve the comprehensive control purpose of simultaneously reducing the porosity of the weld seam, improving the working condition adaptability, and improving the weld seam forming quality.

The invention discloses a confocal alignment device and method for correlation beams of double-beam optical tweezers, and belongs to the technical field of optical tweezers. A laser light source of the device is subjected to beam expansion, then passes through a linear polarizer for polarization and a # imgabs0 # wave plate, and then enters a polarization splitting prism for beam splitting; reflected light S of the polarization splitting prism enters a first objective lens after being reflected by a first reflector and a first dichroscope, and emergent light P enters a second objective lens after being reflected by a second dichroscope; the second reflecting mirror is arranged in an S light path passing through the second dichroscope; the plano-convex lens is arranged in front of the imaging camera and is coaxial with the imaging camera; an imaging sheet fixed on the single-axis displacement platform can be moved in and out in a light path; according to the method, an imaging sheet is moved out or introduced between objective lenses which are coaxially mounted, and a light blocking sheet is moved out and introduced in an S light path, so that respective imaging of two beams of light can be realized, the radial space center position of a correlation light beam can be directly observed, and the alignment adjustment efficiency of the light trap is improved.

The invention discloses a coaxial double-beam welding method and coaxial double-beam welding equipment, and relates to the technical field of metal laser welding methods.The coaxial double-beam welding method comprises the following steps that S1, a to-be-welded workpiece is pretreated, and then the to-be-welded workpiece is fixed; s2, the continuous laser beam and the pulse laser beam are coaxially coupled into a composite laser beam, the spraying direction of molten pool shielding gas is adjusted, and the sprayed molten pool shielding gas is aligned to a molten pool; s3, the composite laser beam is adjusted, and the spot diameter d of the composite laser beam irradiating the molten pool is controlled; s4, the average output power and the defocusing amount of the continuous laser are set to be delta z2, the average output power and the defocusing amount of the pulse laser are set to be delta z2, and the frequency is f and the pulse width; and S5, welding is conducted, and meanwhile molten pool shielding gas is sprayed to the molten pool till welding is finished. Continuous laser and pulse laser are coaxially coupled to form a composite laser beam, the composite laser beam jointly acts on a molten pool, the temperature distribution gradient is accurately controlled by regulating and controlling the coaxial double-beam heat source state, and therefore the problem of thin plate welding deformation is solved.

The invention relates to the technical field of optical design, and discloses a double-beam differential measurement device and method for the polarization sensitivity of a metasurface grating, and the method comprises the steps: dividing a pre-generated light beam into a first light beam and a second light beam through an optical fiber coupler, carrying out the dynamic switching of the polarization state of the second light beam, and obtaining a second incident light beam, adjusting the first light beam based on the second incident light beam to obtain a first incident light beam; enabling the first incident light beam to pass through a first path without the metasurface grating, enabling the second incident light beam to pass through a second path comprising the metasurface grating, and obtaining a first output light beam and a second output light beam; performing time domain difference on the first output light beam and the second output light beam, and calculating to obtain a multi-polarization-state differential signal; correcting the multi-polarization-state differential signal through a preset differential correction mechanism to obtain a corrected differential signal; calculating the polarization sensitivity of the metasurface grating according to the corrected differential signal; according to the invention, the accuracy of the calculated polarization sensitivity of the metasurface grating can be improved.

The invention relates to the technical field of laser welding, in particular to a 6-series aluminum alloy welding method and device with a magnetic field cooperating with time-sharing double-beam scanning, and the method comprises the steps that in the welding process, a blue light laser beam is used for scanning along a to-be-welded path in a spiral path, and a micro molten pool array is formed; after the blue laser beam stops scanning, a near-infrared laser beam concentric with a light spot of the blue laser beam is emitted at a preset time interval, and welding is conducted along a linear path deviating from the center line of the micro-molten pool array by a preset deviation amount; and during emission of the near-infrared laser beam, a constant magnetic field perpendicular to the welding surface is applied to the welding surface. The welding stability and the joint consistency of the 6-series aluminum alloy are improved, and the welding effect is effectively improved.

The invention provides an epitaxial growth control method and device, computer equipment and a storage medium. The epitaxial growth control method comprises the following steps: irradiating a wafer to be measured and the surface of a reference irradiation surface by adopting a super-continuum spectrum laser light source to obtain a reflected light signal; synchronously scanning and filtering the reflected light signal to output two paths of narrow-band light; the two paths of narrow-band light are converted into electric signals and then differential operation is carried out, and the reflectivity of the wafer to be measured is calculated according to a differential result; and determining growth parameters of the epitaxial layer based on the reflectivity, and adjusting process parameters of the reaction cavity according to the growth parameters so as to control epitaxial growth of the wafer to be tested. According to the super-continuum spectrum laser light source, multiple characteristic wavelengths can be scanned in one process step, synchronous monitoring of multiple growth parameters is achieved, and the monitoring requirement of a complex epitaxial structure is met; in addition, common-mode noise in the measurement process is eliminated in real time through the double-beam differential measurement technology, the signal-to-noise ratio is greatly increased, the measurement precision is improved, and accurate control over epitaxial growth is achieved.

The invention relates to a reflective double-beam interference exposure system reticle density and aberration considered adjustment method, which comprises the following steps: constructing a reticle density standard module, and generating a standard reference beam for adjusting the reticle density of an exposure system; a reflection type double-beam interference exposure system is built, points formed after + / -1-level standard reference beams are focused through an off-axis parabolic mirror serve as nominal focuses of all off-axis mirrors in a double-beam light path, the spatial position of the off-axis parabolic mirror is continuously adjusted, wavefront measurement is combined with a spherical interferometer, and the reflection type double-beam interference exposure system is obtained. And enabling the nominal focus of the off-axis mirror to coincide with the spatial position of the real focus, thereby completing the construction of the double-beam interference exposure system. According to the invention, the problem that the aberration and the scribed line density are difficult to accurately control at the same time in the adjustment process of the reflective double-beam interference exposure system is solved, and a new idea is provided for the high-precision adjustment of the meter-scale large-aperture reflective interference exposure system.

The utility model provides a coaxial double-vision control device for double-beam laser processing, which comprises a welding frame and a laser beam generator, a suspension beam close to the top is connected in the welding frame in an up-down sliding manner, a rotating shaft is arranged at the bottom of the suspension beam, a transverse plate is fixedly connected to the bottom of the rotating shaft, and a lead screw is rotatably connected to the bottom of the transverse plate. According to the utility model, the transverse plate is arranged, the screw sleeve I and the screw sleeve II of which the distance is controlled by the lead screw are arranged below the transverse plate, and the adapter seats for mounting the laser beam generators are arranged at the bottoms of the screw sleeve I and the screw sleeve II, so that compared with the prior art, the laser beam generator has a function of adjusting the distance between the two laser beam generators; the double-beam laser welding device is suitable for laser welding of two welding positions with different distances, and the application range of double-beam welding is enlarged.

The invention provides a silicon carbide epitaxial layer thickness infrared light measurement method and system, a medium and equipment, and relates to the technical field of thickness measurement. Based on a double-beam interference model, considering air-epitaxial layer and epitaxial layer-substrate interface reflection, deducing an optical path difference and a total phase difference, and constructing a general thickness solving model according to a refractive index relationship between an epitaxial layer and a substrate; dividing spectral intervals by adopting a sliding window, calculating the thickness of each interval by utilizing different dispersion models, and distributing weights according to relative standard deviation for weighted fusion to obtain a comprehensive thickness solving model; expanding to a multi-beam interference model, deducing a total reflectivity formula, and analyzing necessary conditions and thickness errors of multi-beam interference; and acquiring a silicon carbide epitaxial wafer to be measured, and building a fitting model by combining an Airy formula and the dispersion model to eliminate errors so as to obtain a thickness measurement result. High-precision and high-reliability non-destructive measurement of the thickness of the silicon carbide epitaxial layer is achieved, and the problems of systematic errors and insufficient result reliability caused by a traditional simplified model are solved.

The invention discloses a double-beam link vortex light correction system and method based on a model method, and the system comprises a double-beam common-path light path which is used for enabling vortex light and planar light to be transmitted in a common path, to pass through a turbulent flow or optical distortion region together, and to carry the same wavefront distortion information; the wavefront correction unit is used for dynamically compensating wavefront distortion information; the image acquisition and control unit is used for acquiring a corrected far-field light spot image after the planar light passes through a distortion area, and generating a driving instruction of the wavefront correction unit according to far-field light spot information to realize closed-loop control; and the topological charge detection module is used for carrying out topological charge detection on the corrected vortex light. According to the invention, indirect correction of the turbulence aberration of the common-path vortex light is realized, so that the correction efficiency and stability of the vortex light are improved.

An aberration regulation method of a reflective double-beam interference exposure system, comprising: constructing a reflective double-beam interference exposure system, dividing a light beam output by a laser into two double beams with the same intensity, and forming an interference exposure field; constructing an aberration regulation system, testing and recording the aberration of the double-beam light path by using a spherical interferometer, and regulating the wavefront of any light beam in the double beam by using a deformable mirror, so that the aberration of the light beam matches the aberration of the other light beam, and the regulation of the aberration of the interference exposure field is completed. The present application solves the problems of precise assembly and adjustment, wavefront aberration control and the like of the reflective double-beam interference exposure system based on a large-aperture off-axis parabolic mirror, and provides a new solution for the preparation of a meter-level large-aperture, low-aberration diffraction grating.

The invention relates to a quasi-differential wavefront segmentation double-beam interference device with a planar light path structural design, which has the structural characteristic of a non-closed optical path for transmitting a measurement light beam in a one-way manner. Space coherent light of a transverse mode vector filtering mechanism based on the Huygens principle / phased array principle instead of homologous transmission time coherent light is used as each light source, and a non-closed optical path is realized under the cooperation of a one-way transmission mode on a divided measuring light beam. The problem that the sum of the loop wavelength increment or the frequency increment of a closed path interference device is zero is solved, so that the purpose of measuring the first-level effect of anisotropic physical parameters of a measured object in a linear system is achieved, and the device is particularly suitable for immersion type online measurement. The optical elements have stable performance and sound self-adaptive mechanism and self-diagnosis capability through careful layout of the optical elements; and the method also has wide application prospects in basic physical research and novel navigation / positioning systems. The invention also provides a differential wavefront segmentation and semi-transparent and semi-reflective mirror beam combination interferometer device based on the planar light path structure design, and a wavefront segmentation interferometer device based on the planar light path structure design and provided with a pre-crossing area and a bending type one-way-two-way-common mode combination light path structure. The invention relates to a wavefront segmentation interferometer device of a one-way-two-way combined light path structure which is designed based on a planar light path structure and adopts polarization light splitting-beam combination, optical rotation processing of a reference light beam and original path returning, and a use method of an interference device.

A dual beam device for three-dimensional volume image generation of semiconductor objects within a wafer and a method of operating the dual beam device are provided. The dual beam device comprises a closed loop monitoring system between a focus point of a charge-particle beam imaging system and an inspection site on a wafer mounted on a wafer stage. Thereby, drifts between a charge-particle beam imaging system and the wafer stage are mitigated.

According to the grid line perpendicularity adjusting method and device for the holographic diffraction grating double-beam exposure system, on the basis of the double-beam exposure system, a high-side sag substrate, a cube-corner prism, a rectangular prism, a horizontal adjusting table and a CCD are additionally arranged; a reflection reference surface is established through a cube-corner prism and a right-angle prism, and a to-be-exposed substrate with a high-precision positioning notch is combined, so that high-precision correction of an exposure light path is realized. The method effectively solves the problem that the perpendicularity of the grid line relative to the bottom reference surface of the substrate in double-beam holographic interference photoetching is insufficient, ensures that the prepared grating grid line has high perpendicularity precision, and remarkably improves the diffraction performance of the grating.

The application discloses a kind of superfast laser processing system and method that can steplessly regulate the inclination of micro slot side wall, including laser, laser exit beam is divided into two beams after beam splitter, wherein beam 1 is parallel to Y axis, beam 2 is parallel to X axis;Beam is reflected after first mirror and exits parallel to Y axis;Two beams are vertically incident into double-beam adjustable tilt moving device, and after regulating light beam, respectively through second mirror, third mirror and through first convex lens, second convex lens, it converges in a certain angle and a certain interval on the surface of workpiece to be processed, and the workpiece to be processed is clamped on three-dimensional motion platform, and the focal point of two intersecting converging beams is relatively moved with workpiece to be processed, to realize the laser etching processing of surface micro slot;The application can regulate the inclination of two sides respectively to realize the efficient controllable processing of rectangular micro channel, other side wall inclination micro channel and even negative inclination micro channel.

The invention discloses a photobleached all-polymer optical waveguide grating sensor and a preparation method thereof, and belongs to the technical field of polymer optical waveguide grating sensors. The preparation method comprises the following steps: carrying out hot stamping on a substrate sheet to obtain a substrate sheet with a groove; spin-coating photoresist on the substrate sheet to form a photoresist core layer; photoetching the photoresist core layer through double-beam interference to obtain the photoresist core layer with interference fringes; spin-coating a thermosensitive polymer cladding material on the photoresist core layer, covering the flexible substrate and then carrying out low-temperature thermocuring so as to bond the photoresist core layer and the flexible substrate; stripping the substrate sheet, exposing the photoresist core layer, covering the protective cladding, and curing to obtain a multi-layer composite device; and performing non-uniform post-baking on the multi-layer composite device to obtain the multi-layer composite device. According to the invention, the grating period can be changed under the condition that the grating mask is not replaced, and the cost of spectrum adjustment is greatly reduced.

The invention relates to the technical field of in-situ detection of electron microscopes, in particular to a one-stop four-dimensional transmission scanning focused ion beam double-beam electron microscope, which comprises a vacuum cavity provided with a vacuum cavity cover; a sample table is arranged on the inner side of the vacuum cavity cover; the electron beam, the ion beam, the manipulator, the sample holder and the gas injection system are mounted on the vacuum cavity through the multifunctional in-situ sealing flange; the system further comprises a 4D STEM detector. According to the invention, electron beam observation, ion beam processing, four-dimensional scanning transmission electron microscope imaging information acquisition and in-situ electric, optical, thermal, force and other external field loading functions are integrated, and scanning electron microscope imaging, transmission electron microscope sample preparation and in-situ 4D STEM diffraction information acquisition under multi-field combined application can be carried out on a sample in one device. One-stop full-scale multi-field combined application detection is realized, the test result is prevented from being influenced by contact with air, water and other external environments in the sample transfer process, and meanwhile, the test efficiency is remarkably improved.

The invention relates to the field of photocuring additive manufacturing, in particular to a double-beam coupling pulse type photocuring additive manufacturing method and device.The method comprises the following steps that S1, a purple laser beam emitted by a purple laser sequentially passes through a purple DMD chip and a long-wave-pass dichroscope and then enters a focusing objective lens; patterning and projecting to photosensitive resin through a focusing objective lens to form an initial curing area with any section; s2, a red light laser beam emitted by a red light laser sequentially passes through a red light DMD chip and a short-wave-pass dichroscope to enter a focusing objective lens, and is projected to the boundary of the initial curing area in a patterning manner through the focusing objective lens, so that boundary modification is realized; s3, the purple laser beam and the red laser beam construct a complex three-dimensional micro-nano structure layer by layer in a double-beam coupling mode; and the defects of inaccurate boundary morphology, high residual stress and the like in the existing single-beam curing technology can be effectively overcome.

The invention discloses a double-beam scanning photoelectric sensor and a control method, and aims to solve the problem of false triggering when an existing sensor detects an object with a gap or high light reflection. The sensor is mainly composed of a light beam transmitting module, a light beam receiving module, a control processing module and an output module. Wherein the light beam emitting module is composed of two independent infrared lasers and can synchronously emit parallel light beams with the diameter of 1.0-2.0 mm; a state machine logic unit is arranged in the control processing module, output is triggered only when two paths of signals exceed a set threshold value by comparing the intensity of the double-beam signals in real time, and the current output state is maintained when any path of signal is lost; the output module provides an uninterrupted NPN / PNP switching signal. Through double-beam cooperative scanning and special control logic, stable detection can be provided for regular gap objects such as printed circuit boards and trays, transparent or highly reflective materials can be effectively handled, and the false triggering rate is remarkably reduced while the detection reliability is improved.

The invention relates to a high-sensitivity reciprocal optical voltage sensor resistant to environmental interference. A wide-spectrum light source, a polarizer, a circulator, a 45-degree fusion welding point and a sensing head are connected in sequence, and the circulator is connected with a photoelectric detector; natural light emitted by the wide-spectrum light source emits an optical signal to the polarizer, the optical signal is changed into single polarized light after passing through the polarizer, and the single polarized light is transmitted to the 45-degree fusion welding point after passing through the circulator and then is divided into two beams of polarized light which are perpendicular to each other and enters the sensing head; when voltage is applied to the outside, two beams of polarized light cause a phase difference between two light beams in the sensing head due to the Pockels effect, the phase difference passes through the sensing head after being reflected by the reflecting film of the sensing head, the sensing head realizes orthogonal line polarized light mode interchange, and light path reciprocity is formed; the reflected light returns to the circulator along the original light path and enters the photoelectric detector through the circulator, and voltage measurement is achieved by establishing the linear relation between the optical phase difference change and the voltage change. According to the invention, interference of environmental factors such as temperature, magnetic field, vibration and the like is resisted, and the sensitivity of the sensor is improved.