The invention discloses a preparation method of a two-dimensional material
transistor device for TEM in-situ electrical measurement, and the method comprises the steps: forming an
electron beam
exposure glue
isolation layer in a device region through an
electron beam
exposure technology, and carrying out in-situ
processing and deposition in combination with a two-
beam system (FIB-SEM). A two-beam deposition
system is used for directionally depositing a
platinum (Pt) material, and a two-dimensional source / drain
electrode of a two-dimensional material
transistor device is longitudinally pulled, so that the two-dimensional source / drain
electrode is subjected to TEM sample sheet extraction in two beams, and the
visualization of the two-dimensional source / drain
electrode is realized. And then, through an accurate traction and
welding process, the electrode is connected with the special
chip, so that in-situ electrical measurement of the device in a TEM environment is realized. According to the method, the intrinsic source-drain-gate structure of the two-dimensional FET device is effectively maintained, the problem of difficulty in electrode connection of the two-dimensional FET in traditional TEM
sample preparation is solved, and a novel and reliable technical path is provided for two-dimensional material
electricity-structure collaborative characterization.