64361 results about "Atomic physics" patented technology

The invention belongs to the technical field of display, and particularly relates to a display panel and a display device. The display panel comprises a substrate, first electrodes, an insulating layer and an isolation structure, the first electrodes are arranged on one side of the substrate, and a first opening is formed between every two adjacent first electrodes; the insulating layer is arranged on the side, away from the substrate, of the first electrode, at least part of the insulating layer is located in the first opening, the insulating layer comprises a second opening penetrating through the insulating layer, and the orthographic projection of the second opening on the substrate and the orthographic projection of the first electrode on the substrate are at least partially overlapped; the isolation structure is arranged on the side, away from the substrate, of the insulation layer. The orthographic projection of the first opening on the substrate is located in the orthographic projection of the isolation structure on the substrate.

The invention provides a display panel and a display device.The display panel is provided with a first area and a second area surrounding the first area, the display panel comprises a substrate, an isolation structure, a light-emitting function layer, a first electrode layer and a first signal line, the isolation structure is arranged on one side of the substrate, a plurality of opening structures arranged at intervals are defined by the isolation structure, and the light-emitting function layer is arranged on the first electrode layer; the light-emitting function layer is arranged on one side of the substrate and located in the first area, and the light-emitting function layer comprises a plurality of light-emitting structures arranged in the opening structures respectively. The first electrode layer is arranged on the side, away from the substrate, of the light-emitting functional layer, and the first electrode layer comprises first electrodes which are arranged in the opening structures and electrically connected with the isolation structures. The first signal line is located on one side of the isolation structure in the first direction, the first signal line is electrically connected with the isolation structure so that a power signal provided by the first signal line can be transmitted into the first electrode through the isolation structure, and the first direction is parallel to the plane where the substrate is located.

The present disclosure provides a charged particle element and relates apparatus and methods. In one arrangement, the element comprises a beam manipulator configured to operate on a plurality of charged particle beams in a beam grid. The beam manipulator comprises a plurality of plates. Each plate has two surfaces and a plurality of apertures. The plates comprises at least one curved-surface plate with a curved surface. The curved surface faces a facing surface of an adjacent plate. Deflections are applied to beams by controlling a potential difference between the curved surface and the facing surface.

The invention relates to the technical field of MOS semiconductors, and discloses a variably doped planar gate silicon carbide VDMOS device and a preparation process thereof, the variably doped planar gate silicon carbide VDMOS device comprises a plurality of MOS cells which are parallel to each other, and each MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a source electrode and a grid electrode; the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer, and a lightly doped N layer is arranged in the middle of the N drift layer of a single MOS cell; lateral symmetric P-layers are arranged in the single MOS cell and located on the left side and the right side of the N drift layer, and the section contours of the corresponding sides of the lateral symmetric P-layers on the two sides are in an arc shape. By arranging the lightly doped N layer in the middle of the N drift layer and introducing the arc-shaped laterally-symmetrical P-layers to the two sides, the electric field distribution of the device is optimized, the local electric field concentration is reduced, the breakdown voltage is remarkably improved, and the charge balance capability is enhanced and the leakage current is reduced through the contact between the laterally-symmetrical P-layers and the N substrate layer.

A coil configuration and method for transcranial magnetic stimulation enabling stimulation of deep regions of the brain without excessively stimulating the cortex is provided. The coil configuration utilizes at least one coil to produce an off-plane magnetic field to enhance the magnetic field from a top TMS coil. In one configuration at least a single variable position coil referred to as the Variable Halo Coil and positionable vertically and / or angularly is used.

A system for administering transcranial magnetic stimulation in which two or more coils are applied to the patient's body. The coils each may emit a magnetic field which when positioned in one or more configurations result in field overlapping. Magnetic field overlap achieves therapeutic effects otherwise difficult, or impossible, to achieve from traditional single coil TMS devices.

A device for deep transcranial magnetic stimulation regulation treatment is provided. The device includes an upper computer control software, configured to send a stimulation instruction to a system main control module according to predetermined parameter data; a system main control module, configured to send a control enable signal to a stimulation coil excitation power module when receiving the stimulation instruction; a stimulation coil excitation power module, configured to provide a current to a deep stimulation coil module according to the control enable signal; and a deep stimulation coil module, configured to generate a superimposed magnetic field and transmit the superimposed magnetic field to a target region. The deep stimulation coil module includes multiple coil groups. Each coil group includes two coils. There is an overlapping part among magnetic fields of the multiple coil groups, and the overlapping part corresponds to a predetermined target region.

A driving method of a transcranial magnetic stimulation 3D coil device is disclosed, which includes: determining first and second signal peaks corresponding to a specified rotating magnetic field direction, in which the first and second signal peaks respectively correspond to first and second coils in multiple coils; providing a first pulse current having the first signal peak to the first coil, in which the first pulse current signal stimulates the first coil to provide a first magnetic field; providing a second pulse current signal having a second signal peak to the second coil, in which the second pulse current signal stimulates the second coil to provide a second magnetic field, in which the first magnetic field and the second magnetic field form a rotating magnetic field having the specified rotating magnetic field direction.

An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of forming a plurality of epitaxial layers for optical elements on an epitaxial growth substrate, wherein the epitaxial layers are based on a material system different from complementary metal-oxide-semiconductor, CMOS; providing a handle wafer; performing a first dielectric bonding between the epitaxial growth substrate and the handle wafer such that an order of the epitaxial layers for the optical elements is reversed on the handle wafer compared to on the epitaxial growth substrate; removing the epitaxial growth substrate to expose one of the epitaxial layers on the handle wafer; processing the exposed one of the epitaxial layers for providing a common electrode layer for a first contact of each of the optical elements in the optoelectronic device; providing a CMOS integrated circuit, IC, wafer comprising a driver circuit for the optoelectronic device; and performing a second dielectric bonding between the handle wafer and the IC wafer such that an order of the epitaxial layers for the optical elements is reversed on the IC wafer compared to on the handle wafer.

The invention discloses a sparse finite angle CBCT reconstruction method and system based on residual diffusion and a storage medium, and the method comprises the steps: carrying out the CBCT sparse finite angle scanning of a to-be-detected target, and obtaining sparse projection data; fDK reconstruction is carried out on the sparse projection data to obtain an initial CBCT image; generating a first optimized CBCT image from the initial CBCT image through an image pre-training network; through the first optimized CBCT image and the sparse projection data, using the trained residual diffusion model to determine a residual image of the to-be-detected target; summing the first optimized CBCT image of the to-be-detected target and the residual image of the to-be-detected target to obtain a second optimized CBCT image of the to-be-detected target, and the second optimized CBCT image is a final CBCT reconstruction image. According to the method, the problems of stripe artifacts and low-contrast tissue annihilation under limited angle scanning are solved, the large-view CBCT reconstruction resolution is improved, and the radiation dose is reduced.

A nuclear fusion reaction device, system and method. The outer wall of a vacuum chamber (301) in the nuclear fusion reaction device (30) comprises an inner ring surface (M1) and an outer ring surface (M2) which are connected to each other; the outer ring surface (M2) surrounds the inner ring surface (M1); the inner ring surface (M1) protrudes toward the central axis of the vacuum chamber (301); the vacuum chamber (301) surrounds a plurality of first coils (302); at least some of the plurality of first coils (302) extend in the circumferential direction of the inner ring surface (M1) and are sequentially arranged in the axial direction of the vacuum chamber (301); a plurality of second coils (303) surround the vacuum chamber (301), extend in the circumferential direction of the outer ring surface (M2), and are sequentially arranged in the axial direction of the vacuum chamber (301); a plurality of third coils (304) all surround the vacuum chamber (301) and are sequentially arranged in the circumferential direction of the vacuum chamber (301); and the plurality of first coils (302), the plurality of second coils (303), and the plurality of third coils (304) are used for generating a magnetic field, such that plasma rings with negative triangular deformation are generated in the vacuum chamber (301), and a fusion reaction occurs.

The invention belongs to the technical field of laser welding, and discloses a laser welding macro-micro multi-physics field cross-scale bidirectional coupling modeling method, which adopts a diffusion interface theory, considers macro heat flow information to revise micro phase field and solute field evolution equations, considers micro phase quality information to revise macro temperature field and flow field evolution equations, and considers micro heat flow information to revise micro phase field and solute field evolution equations. A macroscopic heat flow-microcosmic phase and mass multi-physics field bidirectional coupling model is innovatively constructed, and macroscopic and microcosmic bidirectional coupling calculation in the same computational domain is achieved. The model can overcome the limitation that a traditional sharp interface is difficult to couple, and a theoretical model basis is provided for precise prediction of macroscopic forming and microstructure evolution in the laser welding process. According to the method, a macroscopic temperature field / flow field-microscopic phase field / solute field bidirectional coupling mechanism is established, a cross-scale data bidirectional collaborative interaction method is provided, and therefore a laser welding macro-microscopic multi-physical field / cross-scale bidirectional coupling modeling method is provided, and precise simulation of macro-microscopic forming in the laser welding process is achieved.

The invention discloses a method for continuously and efficiently adsorbing and separating hydrogen isotopes. The hydrogen isotopes are separated by adopting a multi-tower variable-temperature variable-pressure device operated in a simulated moving bed operation mode. When the device runs, each adsorption tower needs to sequentially execute the following steps: 1, adsorption; 2, replacement; 3, heating; 4, vacuumizing and desorbing; 5, carrying out vacuum purging; 6, pressurizing and cooling; the operation mode of the simulated moving bed is that an adsorption tower is frequently, sequentially and synchronously moved along the gas flowing direction in the tower through all gas input and output ports, so that an adsorbent phase and a gas flowing phase in the tower form countercurrent flow, and the hydrogen isotope adsorption separation efficiency is enhanced. The invention relates to a technological process of cyclic adsorption, replacement, heating, vacuum desorption, pressurization and cooling, continuous and efficient hydrogen and isotope adsorption separation is realized, multi-tower serial adsorption and replacement are adopted in the process, and separation of hydrogen isotopes (such as H2 / D2) is enhanced; and the desorption efficiency of heavy components is improved by adopting a heating and vacuumizing depressurization coupling mode.

The present disclosure provides a magnetic resonance signal processing device. The device may include: a signal receiving unit configured to obtain a received magnetic resonance signal, wherein at least part of the magnetic resonance signal is generated by exciting one or more specific nuclides; an analog-to-digital converter configured to perform an analog-to-digital conversion on the magnetic resonance signal; and a control unit configured to obtain a digital output signal of the magnetic resonance signal by processing the magnetic resonance signal after the analog-to-digital conversion.

The invention relates to a solar cell and a manufacturing method thereof. The solar cell comprises a substrate, a first electrode and a second electrode, the front surface of the substrate comprises a first metallization region and a first non-metallization region, the first metallization region is provided with a first pyramid structure, the first non-metallization region is provided with a second pyramid structure, the spire of the first pyramid structure is higher than that of the second pyramid structure, and the first metallization region is provided with a first diffusion doping region; the back surface of the substrate comprises a second metallization region and a second non-metallization region, a tunneling layer and a semiconductor doping layer are sequentially laminated on one side, far away from the substrate, of the second metallization region, and the second non-metallization region is provided with a third pyramid structure; the first electrode is arranged in the first metallization region, and the first electrode is electrically connected with the first diffusion doping region; and the second electrode is arranged in the second metallization region and is electrically connected with the semiconductor doping layer. The short-circuit current output and the overall photoelectric conversion efficiency of the cell are improved, and the double-sided rate of the cell is improved.

A plasma processing method includes (a) generating plasma in a chamber of a plasma processing apparatus including a substrate support provided in the chamber and supporting a substrate placed thereon, (b) applying a voltage pulse from a bias power supply to a bias electrode of the substrate support in order to draw ions from the plasma into the substrate, and (c) repeating (b). In (c), a duration length of the voltage pulse is changed to change a potential of the substrate.

The invention discloses a manufacturing method of a back contact battery, relates to the field of photovoltaic technology, and aims to improve the working performance of the back contact battery. The manufacturing method of the back contact battery comprises the following steps: providing a semiconductor substrate; and sequentially forming a first interface passivation layer and a first doped silicon layer which are stacked on the first surface of the semiconductor substrate along the thickness direction of the semiconductor substrate. And forming an insulating mask pattern on a partial region of one side, deviating from the semiconductor substrate, of the first doped silicon layer. And removing the parts, exposed outside the insulating mask pattern, of the stacked first interface passivation layer and the first doped silicon layer. And texturing treatment is carried out on the surface of the area, exposed out of the insulating mask pattern, of the first surface and the second surface. A first passivation layer is formed on the second side of the semiconductor substrate. And sequentially forming a second interface passivation layer and a second doped silicon layer which are stacked on the first interface passivation layer and the first doped silicon layer which are stacked and the first surface. And selectively etching the stacked second interface passivation layer and second doped silicon layer.

The invention provides a preparation method of a transmission electron microscope ultrathin sample with a cross section of an electron beam sensitive material, which comprises the following steps: selecting a specific region as a to-be-extracted sample region for the electron beam sensitive material by adopting an electron beam imaging technology; depositing a protective layer on the surface of the to-be-extracted sample area by adopting an electron beam and / or an ion beam; bombarding a to-be-extracted sample area by utilizing a high-energy ion beam, extracting an electron beam sensitive material cross section sample from the to-be-extracted sample area, and fixing the extracted sample to a metal bracket; performing pre-thinning treatment on the extracted sample by using a focused ion beam to obtain a first thinned sample of which the thickness is reduced to be less than a first thickness; and transferring the first thinned sample into a micro-beam fixed-point ion thinning system, and carrying out multi-time stepped low-energy ion beam fine thinning treatment on the first thinned sample by using inert gas ion micro-beams to obtain a second thinned sample which is clean in surface and free of a surface ion damage layer and has the thickness reduced to be less than a second thickness, and taking the second thinned sample as a transmission electron microscope ultrathin sample.

The invention provides a simultaneous multiband superheterodyne receiver based on Rydberg atoms, and relates to the technical field of microwave electric field measurement, probe light provided by a probe light laser and coupling light provided by a coupling light laser oppositely enter an alkali metal atom gas chamber; the microwave signal sources of the multiple wave bands generate two paths of signals, one path of microwave signal is emitted to the space through the local oscillator microwave electric field emission horns of the wave bands, and the microwave electric field receiving horns of the wave bands receive corresponding echo signals. After frequency mixing of each wave band, the microwave electric field emission horn irradiates the alkali metal atom gas chamber at the same time, microwave fields of multiple wave bands are sequentially coupled with multiple pairs of continuous adjacent Rydberg states, and superheterodyne receiving is carried out on microwaves of multiple wave bands at the same time; and superheterodyne and high-sensitivity detection of microwave signals of multiple wave bands can be realized.

Systems, apparatuses, methods, and computer program products are disclosed for authentication of devices. An example method includes an authentication technique utilizing multiple authentication factors. The first authentication factor includes obtaining identical quantum entangled particles by a first device and a second device. The first and second device may read the quantum entangled particles to obtain identical bit sequences associated with the quantum entangled particles. The first and second device may utilize the bit sequences, along with a second factor, to authenticate a connection between the devices. The second factor may be, for example, a user password. The first device may send a request for authentication including one of the bit sequences and an encrypted version of the user's password. The second device may authenticate the first device using an identical copy of the bit sequence and previously obtained knowledge of the user's password.

The present disclosure provides a display substrate and a method of manufacturing the same, a display panel, and a display apparatus. The display substrate includes a base substrate, pixel units are arranged in an array on the base substrate, each pixel unit includes an anode, a light-emitting functional layer and a cathode, a pixel definition layer is provided, and has a plurality of openings, and each opening exposes a portion of an anode; the light-emitting functional layer is located in the opening; at least a portion of two opposite ends of the anode along a first direction is warped in a direction toward the cathode, an orthographic projection of the warped portion of the anode on the base substrate does not overlap with that of the cathode on the base substrate, and a hollow region is provided at a position of the cathode at least corresponding to the warped portion.

The invention discloses an absolute type planar two-dimensional time grating displacement sensor based on an alternating electric field and a measuring method. Excitation signals are applied to X excitation pairs in sequence, when an induction electrode generates an induction signal, the excitation signals are stopped from being applied to the remaining X excitation pairs, and four paths of electric signals generated by an induction group are processed, so that the absolute type planar two-dimensional time grating displacement sensor based on the alternating electric field is obtained. Obtaining the X excitation antipode of the movable ruler base body and the displacement position of the movable ruler base body in the X excitation antipode so as to obtain the two-dimensional time grating absolute displacement value of the movable ruler base body relative to the fixed ruler base body in the X direction; similarly, a two-dimensional time grating absolute displacement value of the movable ruler base body in the Y direction is obtained; and then taking the two-dimensional time grating absolute displacement values in the XY direction as the coordinates of the movable ruler base body in the XY direction to obtain the absolute displacement of the movable ruler base body. The absolute positions in the X direction and the Y direction are obtained in a scanning mode so as to achieve planar two-dimensional absolute displacement measurement, accumulated errors and random errors can be reduced, the measurement precision can be improved, and wide-range high-precision measurement can be achieved.

Gate isolation processes (e.g., gate-to-source / drain contact isolation) are described herein. An exemplary contact gate isolation process may include recessing (e.g., by etching) sidewall portions of a high-k gate dielectric and gate spacers of a gate structure to form a contact gate isolation (CGI) opening that exposes sidewalls of a gate electrode of the gate structure, forming a gate isolation liner along the sidewalls of the gate electrode that partially fills the CGI opening, and forming a gate isolation layer over the gate isolation liner that fills a remainder of the CGI opening. A dielectric constant of the gate isolation liner is less than a dielectric constant of the high-k gate dielectric. A dielectric constant of the gate isolation layer is less than a dielectric constant of the high-k gate dielectric. A dielectric constant of the gate isolation layer may be less than a dielectric constant of the gate isolation layer.

The present disclosure discloses a circularly polarized satellite antenna based on a magnetoelectric dipole. A floor is slotted, and an equivalent magnetoelectric dipole is excited using a grounded right-angle folded dipole, while two square parasitic patches are loaded to enhance a radiation performance, thus exciting a broadband high-gain circularly polarized radiation beam. The present disclosure utilizes the L-shaped right-angle folded dipole to simultaneously realize an ingenious combination of an electric dipole and a magnetic dipole, realizing a good circularly polarized radiation performance. At the same time, the present disclosure realizes circularly polarized radiation using a form of the magnetic dipole, which results in a stable pattern and a high gain.

One variation of a system includes a pressure vessel: including a wall; defining a primary working fluid circuit extending vertically within the wall; defining a secondary working fluid circuit extending vertically within the wall and fluidly isolated from the primary working fluid circuit; and configured to store a nuclear fuel, a primary working fluid, and a secondary working fluid. The wall of the pressure vessel: defines a heat exchanger configured to transfer thermal energy from the primary working fluid flowing through the primary working fluid circuit into the secondary working fluid flowing through the secondary working fluid circuit; and defines a radiation shield configured to attenuate radiation emitted by the nuclear fuel.

A nitride-based semiconductor device includes a first and second nitride-based semiconductor layers, two or more source / drain (S / D) electrodes, a gate electrode, a doped III-V semiconductor layer, a gate protection layer and a first passivation layer. The doped III-V semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode. The gate protection layer caps the gate electrode and the doped III-V semiconductor layer and is separated from the S / D electrodes. The first passivation layer covers the second nitride-based semiconductor layer and the gate protection layer and abuts against sidewalls of the S / D electrodes which are separated from the gate protection layer by the first passivation layer.

Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.

The invention relates to an optically controllable switching device having a first and second line section, between which an optically controllable switch (T2) is inserted, and having a sensor element (SE). The optically controllable switch (T2) disconnects or connects depending on an optical switching signal (SB), whether the switch is "on" or "off". The sensor element (SE) comprises a carrier material (TM) with crystals comprising one or more paramagnetic centers (NV). When irradiated with pump radiation (LB), the sensor element (SE) emits fluorescent radiation (FL) which depends on the magnetic flux density B at the location of the sensor element (SE). A line current (I LTG) in the first line section of the line (LTG) generates a magnetic field with a flux density B which, with sufficient current strength, influences the fluorescent radiation (FL) from one or more paramagnetic centers (NV). The optically controllable switching device has first means (LWL1, PL1, LIV) for irradiating the one or more paramagnetic centers (NV) with pump radiation (LB) and second means (LWL2, F1, PD, LIV) for detecting and separating the fluorescent radiation (FL) and for detecting a measured value signal which depends on the intensity of the fluorescent radiation (FL) and / or on the phase shift of the modulation signal of the temporal profile of the intensity of the fluorescent radiation (FL). The optically controllable switching device has third means (LIV) for generating an optical switching signal (SB) and for controlling the state of the optically controllable switch (T2) using this optical switching signal (SB).The optical switching signal (SB) depends on the intensity of the fluorescence radiation (FL) and / or on the phase shift of the modulation signal of the temporal course of the intensity of the fluorescence radiation (FL).

Methods and systems are disclosed for solving a differential problem using a hybrid computer system. The differential problem defines a differential equation, and a target function defines an approximate solution to the differential equation. The target function is defined as a sum of basis functions with parameterized coefficients. The method comprises receiving or determining a quantum circuit defining operations of a parameterized quantum model of the differential equation, and determining the solution to the differential problem based on the parameterized quantum model and, optionally, a loss function associated with the differential problem. The quantum circuit defines operations for encoding primitive elements (e.g., terms such as f(x), f(x) / dx, g(x), etc.) of the differential equation in a plurality of quantum states of quantum elements of the quantum processor. Each quantum state of the plurality of quantum states corresponds to a set of (parametrized or unparametrized) coefficients associated with the basis functions, of which at least one quantum state of the plurality of quantum states corresponds to a set of parametrized coefficients associated with the basis functions. The determination of the solution includes varying the variational parameters to determine a set of optimal parameters. The varying of the variational parameters includes: translating the operations of the quantum circuit into control signals for control and readout of the quantum elements of the quantum register; applying the operations of the quantum circuit to the quantum elements based on the control signals; determining classical measurement data by measuring one or more comparisons, e.g. overlaps, between pairs of quantum states from the plurality of quantum states; computing a loss value based on the loss function and the classical measurement data; and adjusting the variational parameters based on the loss value.

The invention discloses an imaging method and system based on cosmic ray muon transmission, which are applied to a control mechanism, and the control mechanism is electrically connected with at least one detection module. The imaging method based on cosmic ray muon transmission comprises the steps that the response state of at least one detection module is obtained, the detection module comprises a plurality of sensor units, and the sensor units are arranged in a string shape. And preprocessing the response state to obtain muon flux in unit area, unit time and unit solid angle. Based on the topographic data, the landform data and the muon flux, the density distribution in the muon ray irradiation range is reversely deduced through a preset algorithm. And performing visual imaging based on a density distribution result. According to the method, the working efficiency of muon geological imaging is improved, the system complexity is reduced, the adaptability in a narrow working environment is remarkably enhanced, and an efficient and convenient solution is provided for the fields of geological exploration, engineering detection and the like.