44 results about "Electron current" patented technology

The invention discloses a method for regulating and controlling the spin state of a two-dimensional antiferromagnetic semiconductor by using a JANUS structure, and the method comprises the following steps: constructing a two-dimensional antiferromagnetic semiconductor material structure model, and carrying out the geometric optimization; calculating magnetic properties and electronic properties based on the optimized structure; replacing halogen atoms on one side to obtain a two-dimensional A-type antiferromagnetic semiconductor material structure model with a JANUS structure, and performing geometric optimization; based on the optimized JANUS structure, the magnetic property and the electronic property of the JANUS structure are calculated; and comparing the spin state near the Fermi level of the optimized two-dimensional antiferromagnetic semiconductor material with the spin state near the Fermi level of the optimized two-dimensional A-type antiferromagnetic semiconductor material with the JANUS structure. According to the method, on the basis of a two-dimensional antiferromagnetic material, a JANUS structure is introduced, the magnetism of the material is not changed, meanwhile, a single polarization spin electron current is introduced at the Fermi level, and a theoretical model is provided for preparing related materials.

The invention discloses a silicon carbide device simulation model and a simulation method thereof. The simulation model is composed of a device gate parasitic inductor, a device gate internal resistor, a device gate collector parasitic capacitor, a device gate emitter parasitic capacitor, an electron current voltage-controlled current source, a hole current source, a device collector parasitic resistor, a device emitter parasitic inductor, a device collector parasitic inductor, a device collector emitter parasitic capacitor and a device ideal diode. During application, parameter data of the device are tested through the static analysis device and the 18kV high-voltage dynamic characteristic test platform, the measured data are input into fitting software, parameter values of the device are determined according to fitting results, and the fitting voltage range is widened, so that the model can be used for simulating the high-voltage silicon carbide device with the voltage class of 18kV and below. The technical problems that an existing silicon carbide device simulation model cannot simulate a silicon carbide device with the voltage of 6.5 kV or above and cannot meet the simulation requirement of a 18kV high-voltage silicon carbide device are solved.

The present invention relates to a light-like Michelson interferometer molecular detector, and belongs to the technical field of molecular detectors. The light-like Michelson interferometer molecular detector comprises: an emitting electrode, a graphene substrate, a light-like semi-transparent and semi-reflective mirror, a light-like total reflection mirror, a collecting electrode, an insulating layer and a substrate electrode. The emitting electrode and the collecting electrode are electrically connected to the graphene substrate respectively. The carriers emitted by the emitting electrode are split by the light-like semi-transparent and semi-reflective mirror after passing through the electron-like light momentum selector, and are respectively reflected to the collecting electrode through the light-like detection arm and the light-like comparison arm through the light-like total reflection mirror. Beneficial effect: The wavelength of graphene-like light transport is shorter and more sensitive to potential changes. When molecules are adsorbed on the photoelectron detection arm, the collected electronic current changes greatly, and the size and range of the interaction potential between the molecule and the graphene can be obtained to measure the molecule.

The invention discloses a nanowire avalanche photodiode with the barrier height of an electron barrier controlled by a grid, which comprises a back electrode, an ohmic contact layer and a first part arranged on the ohmic contact layer, the back electrode and the ohmic contact layer are sequentially arranged from bottom to top, the first part is sleeved with a second part, and the first part and the second part are combined to form a nanowire structure; the first part is a lattice matching layer, the second part is a light absorption layer, and a first superlattice material layer is arranged between the first part and the second part; an electron barrier layer is arranged outside the second part, and a second superlattice material layer is sleeved outside the electron barrier layer; the electron blocking layer is blocked between the second part and the second superlattice material layer; the electron blocking layer is led out through a first top electrode, the second superlattice material layer is led out through a second top electrode, and a first insulating layer is arranged between the first top electrode and the second superlattice material layer; the barrier height of the electron blocking layer is regulated and controlled through the grid voltage, and collection of electron current is reduced.

The present invention belongs to the field of power semiconductor technology and relates to an adaptive high-voltage and low-loss power device. Compared with the traditional LIGBT structure, the present invention introduces an adaptive PMOS structure at the anode end of the LIGBT, and the gate of the PMOS structure is controlled by an integrated diode. When forward-conducting, the PMOS channel is closed, and the electron extraction path is blocked, thereby eliminating the snapback effect. During the shutdown process, as the anode voltage rises, the LIGBT anode PMOS channel is adaptively turned on, and the electrons in the drift region are converted into holes by the electrode 11, and then extracted from the P+ collector region through the PMOS channel; at the same time, the P+ collector region and the N-type buffer layer are almost short-circuited at the same potential, which inhibits the P+ collector region from injecting holes into the drift region, and the two jointly accelerate the shutdown of the device to reduce the shutdown loss. During forward blocking, the hole current in the P+ collector region is converted from the electrode 11 to the electron current and injected into the drift region through the PMOS channel, forming a MOS-like breakdown mode, which increases the breakdown voltage. Therefore, the present invention has smaller shutdown losses and higher breakdown voltages.

A powder bed melting apparatus for additive manufacturing is provided, the apparatus comprising: a power source having an anode and a cathode; an electron source operable to provide an electron beam wherein the electron source is biased by a power source; a plasma source operable to provide a plasma comprising electrons and positively charged ions; a powder bed arranged to receive the electron beam and the plasma; and a controller configured to control operation of the electron source and the plasma source to form a part as a series of layers, each layer being formed by scanning an electron beam over the powder bed to melt powder layers of the powder bed into a desired shape; wherein a plasma source is connected to an anode of a power source, thereby enabling a circuit in which an ion current formed by positively charged ions in the plasma is balanced by an electron current originating from the plasma and returned to the power source via the plasma, therefore, the charging of the powder bed by the electron beam is relieved through the ion current by self-regulation.

This invention provides a simulation method, simulation program, simulation system, and information processing device capable of reproducing carrier transfer delays in actual devices. [Solution] The simulation method uses Poisson's equation, the electron current continuity equation, and the hole current continuity equation to calculate a new free carrier density that takes into account the capture of residual carriers at trap sites and the excitation of captured carriers. Furthermore, the simulation method repeatedly calculates the number of residual carriers and determines whether residual carriers are captured at trap sites and whether captured carriers are excited, based on the newly calculated free carrier density, until the number of residual carriers converges.

Method for operating an X-ray tube (12) having at least one grid electrode (18) arranged between an anode electrode (14) and a cathode electrode (16), wherein - by means of a focusing unit (24) an electron current (26) is focused from the cathode electrode (16) to the anode electrode (14), in that the focusing unit (24) applies a first electrical grid potential to the grid electrode (18) at least in a focusing operation in order to focus the electron current (26), - the focusing unit (24) is supplied with electrical energy in a galvanically isolated manner by means of an energy converter (38), - the first electrical grid potential is provided by means of an adjustable voltage divider (36) of the focusing unit (24), and - the adjustable voltage divider (36) is adjusted by means of a control circuit (40) of the focusing unit (24) by applying to the control circuit (40) at least one galvanically isolated control signal (42, 44) of a control unit (74) galvanically isolated from the X-ray tube (12), wherein the control signal (42, 44) depends on a predetermined value for the first electrical grid potential, characterized in that - an electrical power of the energy converter (38) is set depending on the predetermined value for the first electrical grid potential.

The application discloses a kind of double-gate graphene proton transport device in-situ test system and test method under strong magnetic field, the system is double-layer structure, comprising: inner rod, for placing double-gate graphene proton transport device, the inner rod is integrated with temperature control system, for realizing 100mK to 300K variable temperature test environment;Outer rod, it is set in the outer portion of the inner rod, for independently controlling the vacuum or specific atmosphere environment where the device is located.The application also provides a test method, the assembled system is placed into magnetic field environment, scanning is carried out in predetermined magnetic field intensity range, and temperature is controlled to change between 100mK to 300K;Through the first electrical measurement unit and second electrical measurement unit, the curves of proton current and electron current change with magnetic field, temperature and gate voltage are recorded simultaneously.By unique device structure design and system integration scheme, it provides a powerful tool for studying atomic scale proton transport behavior under extreme multi-physical field coupling environment.

The invention provides a device for inhibiting inversion electron current of a p-type oxide semiconductor thin film transistor and a preparation method thereof, and the device comprises a substrate which is provided with a first surface; the grid electrode is arranged on the first surface; the gate dielectric layer is arranged on one side, deviating from the substrate, of the gate electrode; the semiconductor layer is arranged on one side, deviating from the gate dielectric layer, of the gate dielectric layer; the source electrode and the drain electrode are arranged on the semiconductor layer, a gap is formed between a first projection, formed on the first surface, of the drain electrode and a second projection, formed on the first surface, of the grid electrode, and the first projection and the second projection are both orthographic projections. According to the invention, the inversion electron current of the semiconductor device can be reduced, so that the semiconductor device can be effectively turned off under inversion gate voltage.

The application discloses a vacuum ultraviolet high-power deuterium lamp light source, which comprises a light-emitting anode and a light-emitting cathode, the light-emitting anode is a light-emitting double anode, the light-emitting double anode comprises a main anode and a secondary anode, the secondary anode is a light-emitting grating tube with a small transmission aperture, and the main anode is a metal cylinder with a large size; primary breakdown is realized through the gas between the secondary anode and the light-emitting cathode, then secondary breakdown is realized through the main anode, and vacuum ultraviolet radiation light is output. The application solves the problem of low light power of the existing vacuum ultraviolet deuterium lamp light source, greatly improves the electron current density of the deuterium arc, and improves the light-emitting efficiency.

The present invention teaches increasing the efficiency of a dye-sensitive solar cell by increasing the surface area of the DSSC photoanode. A thin film titanium oxide is deposited in trapezoidal shaped wells etched in the DSSC substrate. The thin-film titanium oxide is anodized to produce titanium oxide nanotubes on the inner surface of the trapezoidal shaped wells to further increase the surface area and incidence of light being temporarily trapped within the wells. A sensitized dye overlays the titanium oxide nanotubes to increase quantity of light absorbed by the titanium oxide nanotubes. A photoactive layer such as Cs2O may be deposited to enhance electron current contribution. A compatible transparent metal contact layer is deposited. This layer may be followed by a high-refractive index droplet over the well to act as a convex lens waveguide for incoming light. Electrical connections are then made to the frontside and backside metal contacts.

The invention provides a semiconductor device and a manufacturing method thereof. The device comprises a substrate; the N-type drift layer is positioned on one side of the substrate; the P-type base region is positioned on one side, far away from the substrate, of the N-type drift layer; the N-type source region and the P-type source region are located in the P-type base region; a gate trench located between the N-type source region and the P-type source region; the gate dielectric layer is located at the bottom and on the side wall of the gate groove, and the gate groove is filled with the gate layer; the total interlayer dielectric layer is positioned on one side, far away from the substrate, of the P-type base region; the N-type source region and the P-type source region are isolated by the total interlayer dielectric layer; the source electrode is positioned between the total interlayer dielectric layers and is respectively connected with the N-type source region and the P-type source region; and the drain is positioned on one side, far away from the N-type drift layer, of the substrate. According to the invention, the N-type source region and the P-type source region are separated by the total interlayer dielectric layer, so that the electron current and the hole current can be detected respectively, and whether the conduction failure of the parasitic bipolar transistor exists or not can be judged accurately when the failure occurs.

The invention relates to the technical field of semiconductor devices, in particular to a semiconductor device and a production method thereof. The device comprises a first doping type substrate and a plurality of primitive cell regions arranged on the first doping type substrate, the primitive cell region comprises: a channel region comprising a gate trench, a first hydrazine region, a minority carrier barrier layer of a first doping type, and a second doping type regulation layer; the hole diversion region comprises a second hydrazine region and a carrier storage layer of the first doping type; wherein the channel region and the hole diversion region respectively bear circulation paths of electron current and minority carrier hole current in the conduction and switching-on / off processes of the device, so that carrier partition circulation is realized. Carrier partition circulation is achieved, the performance of the device is effectively improved, the device has the excellent carrier storage effect, meanwhile, dV / dt controllability is achieved, the on-state voltage drop and the total switching loss of the device are reduced, and the output capacity and the reverse bias safe working area of the device are remarkably improved.

The invention belongs to the technical field of power semiconductors, and particularly relates to a high-speed low-loss transverse power device with a super junction structure. Compared with a traditional SSA-LIGBT, the SSA-LIGBT has the advantages that additional transverse N strips and transverse P strips are introduced to the top of a drift region, and longitudinal P strips are introduced between an anode P + and an anode N +. At the beginning of forward conduction, high-concentration transverse N strips in a drift region provide low-resistance channels for electrons, so that more electron currents reach an anode P + region, and longitudinal P strips between the anode P + region and an anode N + region can increase anode distributed resistance, so that the new structure can eliminate a voltage turn-back effect and realize low conduction voltage drop under a smaller cellular size; in the turn-off process, the transverse N strips and the transverse P strips in the drift region are mutually depleted to accelerate the extraction of excess carriers in the drift region, and the distance between the anode P + region and the anode N + region is shortened, so that the turn-off loss is reduced.

The invention discloses an ultraviolet photoelectric sensor based on surface ion transport and a preparation method and application thereof, and belongs to the technical field of photoelectric sensors. The ultraviolet photoelectric sensor comprises a wide bandgap semiconductor substrate with a hydrophilic property, a porous hydrophilic material arranged on the surface of the substrate and a non-polarized electrode, and the power supply and the electricity meter are connected with the non-polarized electrode circuit. In a high-humidity environment, a layer of continuous water film is adsorbed on the surface of the substrate and has ionic conductance, the porous hydrophilic material enables water not to spread on the surface of the substrate, and the non-polarized electrode can quickly convert ionic current into detectable electron current. According to the ultraviolet photoelectric sensor provided by the invention, the detection of ultraviolet band light is realized by utilizing the ionic conductance of the continuous water film and the temperature change generated by absorbing the ultraviolet band light by the wide bandgap semiconductor. Compared with a traditional ultraviolet photoelectric sensor, the ultraviolet photoelectric sensor has the advantages of being easy to prepare and suitable for serving in a high-humidity environment.

A cleaning method according to one aspect of the present disclosure which cleans an electrostatic chuck includes exposing the electrostatic chuck to plasma and maintaining a relationship between a potential of the electrostatic chuck and a potential of the plasma such that electron current is introduced from the plasma toward the electrostatic chuck.

The invention discloses an ion source plume quasi-electric neutral control system and method, and relates to the technical field of ion source control. Wherein the signal sampling module is of a passive isolation type sampling structure, the input end is connected with the negative electrode of the ion source system and the reference ground, and the output end is connected with the first signal input end of the signal amplification module. According to the ion source plume quasi-electric neutral control system and method, the charge balance state of a plume region is captured in real time, and after signal amplification and analog-to-digital conversion, the FPGA main control module accurately adjusts the electron current adjusting module and the ion current adjusting module according to a preset algorithm; the problems of poor adaptability and insufficient reliability in traditional passive control are solved, the difference value between the ion beam and the electron beam is stably controlled within a reasonable range, the balance response is rapid, it is ensured that the ion source always maintains plume quasi-electric neutrality in long-term operation, and the operation reliability is remarkably improved.

A device for converting light into an electron current emission is described. The device includes a substrate having first and second opposing surfaces. At least one antenna is disposed on the substrate. The at least one antenna is configured to absorb energy from photons having a selected wavelength. At least one dimension of the at least one antenna is a resonant length based on the selected wavelength. In response to photons incident thereon, at least a portion of the at least one antenna is heated to a degree which results in a thermionic emission from the antenna. The device also include at least one collector spaced apart from the at least one antenna by a selected distance. The at least one collector is configured to receive a Schottky emission from the at least one antenna. The received Schottky emissions may be used to signal a photon detection.

A semiconductor device includes at least three arms. Channels of the first and second arms extend to a channel of the third arm. A ballistic electron current is generated from the channels of the first and second arms to the channel of the third arm when a current from the first arm flows to the second arm due to an application of a first voltage. A fin structure is located in the third arm and includes a gate above the fin structure. The gate is controlled using a second voltage. The fin structure is formed to induce an energy field structure that is shifted by an amount of the second voltage to control an opening through which the ballistic electron current of the gate passes, thereby subjecting the ballistic electrons to diffraction and then interference, which in turn changes a depletion width.

The invention discloses an ultraviolet photoelectric sensor based on capillary boundary ion transport and a preparation method and application thereof, and belongs to the technical field of photoelectric sensors. The photoelectric sensor comprises a wide bandgap semiconductor substrate with a capillary boundary, a porous water storage material and an electrode consisting of a non-polarized electrode, the porous water storage material provides a water source for the capillary boundary, the capillary boundary of the substrate is filled with the capillary boundary due to the surface tension of water so that the capillary boundary has ionic conductance, and the non-polarized electrode can rapidly convert ionic current into detectable electronic current. According to the ultraviolet photoelectric sensor provided by the invention, the detection of ultraviolet band light is realized by utilizing the ionic conductance of the ion channel formed by the capillary boundary and the temperature change generated by absorbing the ultraviolet band light by the wide bandgap semiconductor.

The invention provides a three-dimensional stacked magnetic random access memory, a manufacturing method thereof and electronic equipment, and relates to the technical field of integrated circuits. The magnetic tunnel junction is formed by overlapping an alternating magnetic free layer, an insulating tunnel barrier layer and an alternating magnetic fixed layer, and the alternating magnetic free layer can regulate and control the alternating magnetic sequence of the alternating magnetic free layer by using a force applied by a magnetic moment of a spin-polarized electron current of the alternating magnetic fixed layer, so that the magnetization overturning of the magnetic tunnel junction is completed in a pure electrical mode; therefore, stable writing of data is realized under the action of current, so that the magnetic random access memory has the advantages of low power consumption, high speed and non-volatility. Moreover, according to the technical scheme provided by the invention, the anti-interference capability of the three-dimensional stacked magnetic memory is effectively improved by utilizing the advantage of strong anti-interference performance of the alternating magnet on an external magnetic field, so that large-area and high-density stacking of devices can be realized.

This invention discloses an ultraviolet photoelectric sensor based on capillary boundary ion transport, its fabrication method, and its application, belonging to the field of photoelectric sensor technology. The photoelectric sensor includes a wide-bandgap semiconductor substrate with capillary boundaries, a porous water-storing material, and electrodes composed of non-polarized electrodes. The porous water-storing material provides a water source for the capillary boundaries. The capillary boundaries of the substrate possess ionic conductivity due to the surface tension of the water filling the capillary boundaries. The non-polarized electrodes can rapidly convert ion current into detectable electron current. The ultraviolet photoelectric sensor provided by this invention utilizes the ionic conductivity of the ion channels formed by the capillary boundaries and the temperature change caused by the absorption of ultraviolet light by the wide-bandgap semiconductor to achieve the detection of ultraviolet light.

The invention discloses a light-emitting device and a manufacturing method thereof, and the method comprises the steps: introducing a modification layer comprising an electron donor above a second electrode, enabling the modification layer to enable the electron donor to be transmitted to an electron transmission layer through heating, ultraviolet irradiation or ionization treatment, namely, enabling the modification layer to provide the electron donor to the electron transmission layer, and enabling the electron donor to be transmitted to the electron transmission layer; as the radius of the electron donor is small and is generally smaller than 70pm, the electron donor can enter a metal atom lattice of the second electrode firstly and is released to the electron transport layer through channels such as defects and dislocation in metal, so that the electron current density in the light-emitting device is improved, the conductivity of the electron transport layer is improved, and the light-emitting efficiency of the light-emitting device is improved. Therefore, the working voltage of the light-emitting device is reduced, Joule heat generated in the light-emitting device is reduced, and the service life of the light-emitting device is greatly prolonged.

The present invention relates to the field of plasma probe calibration, and provides a plasma probe array calibration method based on radiation spectroscopy and infrared imaging. The surface temperature of the probe array is measured, and the plume parameters of the stably operating Hall thruster are measured using the probe array to obtain the volt-ampere characteristic curve collected by the probe array at this time. An infrared imager is then used to measure the surface temperature of the probe array to obtain the temperature difference of the probe heated by bombardment. Combined with the secondary electron emission coefficient of the probe surface, the secondary current value is calculated. Combined with the ion current value measured by the probe itself, the electron current value is corrected to obtain a true volt-ampere characteristic curve, and the accurate electron temperature density is calculated. A spectrometer is used to measure the electron temperature electron density at this time through spectroscopy, and the electron temperature electron density measured by the modified probe is compared to achieve calibration of the plasma probe array. This is used to solve the problem that the probe measurement results lack calibration and the accuracy is difficult to assess.

The present invention provides a positive electrode plate, a solid-state battery containing the same, and a preparation method. The positive electrode plate includes a positive electrode current collector, a first coating layer and a second coating layer, wherein the first coating layer is on the surface of the positive electrode current collector, and the materials of the first coating layer include a positive electrode material, a conductive agent, a binder and a gel polymer; the second coating layer is on a surface of the first coating layer away from the positive electrode current collector, and the materials of the second coating layer include a positive electrode material, a conductive agent, a binder and an oxide solid electrolyte. The positive electrode plate of the present application constructs a multilayer electrode, which can increase the lithium ion current density close to the current collector side; the oxide solid electrolyte in the second coating layer can bidirectionally regulate the lithium ion current density and the electron current density. The construction of the ion channel and the electron channel by the first coating layer and the second coating layer containing specific components can significantly improve the electrical performance of the battery. At the same time, the positive electrode plate of the present application can also significantly improve the safety of the battery.

The embodiment of the invention discloses a radio frequency ion source system and a control method thereof, electronic equipment and a storage medium, and relates to the technical field of ion sources, the radio frequency ion source system comprises a power supply and control module, a radio frequency discharge unit, an ion extraction unit and a neutralization electron source; wherein the power supply and control module generates a radio frequency signal and a pulse voltage, outputs the radio frequency signal to the radio frequency discharge unit, and outputs the pulse voltage to the ion extraction unit; working gas in the radio frequency discharge unit generates plasma under the excitation of a radio frequency signal, and the plasma is output to the ion extraction unit; the plasma in the ion extraction unit passes through the ion extraction unit under the driving of the pulse voltage and generates a pulse ion beam; and the neutralization electron source generates an electron flow at the rising edge of the pulse voltage, and synchronously outputs the electron flow and the pulse ion beam to obtain a pulse beam current. According to the embodiment of the invention, the pulse beam with concentrated energy spectrum distribution and low energy broadening is realized.

The present invention belongs to the technical field of power systems and discloses a high-frequency series arc modeling method, comprising: analyzing a DC circuit and calculating the cathode spot electron current density of the DC circuit; calculating the radius statistical value parameters of the cathode half-point area based on the arc current amplitude; and calculating the radius change sequence of the radius changing with time based on the radius statistical value parameters; calculating the discharge area area sequence based on the radius change sequence; and calculating the arc current sequence based on the discharge area area sequence and the cathode spot electron current density; and modeling the DC series arc based on the arc current sequence. Based on the dynamic characteristics of electrons, the present invention takes the dynamic change process of the cathode spot into account, and uses the change in the cathode spot radius size to simulate the dynamic change process of the cathode spot, thereby modeling the high-frequency series arc. This method can overcome the defect that traditional arc models cannot represent high-frequency noise components, and has the advantages of simple calculation and high modeling accuracy.

This invention discloses an ultraviolet photoelectric sensor based on surface ion transport, its fabrication method, and its application, belonging to the field of photoelectric sensor technology. The ultraviolet photoelectric sensor includes a wide-bandgap semiconductor substrate with hydrophilic properties, a porous hydrophilic material disposed on the substrate surface, and a non-polarized electrode; a power supply and a meter are connected to the non-polarized electrode circuit. In a high-humidity environment, a continuous water film is adsorbed on the substrate surface, providing ionic conductivity. The porous hydrophilic material prevents water from spreading on the substrate surface, and the non-polarized electrode can rapidly convert the ionic current into a detectable electronic current. The ultraviolet photoelectric sensor provided by this invention utilizes the ionic conductivity of the continuous water film and the temperature change caused by the absorption of ultraviolet light by the wide-bandgap semiconductor to achieve the detection of ultraviolet light. Compared with traditional ultraviolet photoelectric sensors, this invention has the advantages of simple fabrication and suitability for operation in high-humidity environments.

The invention discloses a gate-all-around device preparation method and a gate-all-around device, and the gate-all-around device comprises a substrate which is provided with a P-type transistor region and an N-type transistor region; the P-type transistor region is provided with a first nanosheet channel, and the N-type transistor region is provided with a second nanosheet channel; the preparation method comprises the following steps: forming a first sacrificial stress layer on the surface of a first nanosheet channel, and / or forming a second sacrificial stress layer on the surface of a second nanosheet channel; the intrinsic lattice constant of the first sacrificial stress layer is smaller than that of the first nanosheet channel, and the intrinsic lattice constant of the second sacrificial stress layer is larger than that of the second nanosheet channel; carrying out annealing treatment on the ring gate device; and removing the first sacrificial stress layer, and / or removing the second sacrificial stress layer. According to the invention, the hole current of the P-type transistor region is effectively improved, and / or the electron current of the N-type transistor region is effectively improved.