243 results about "Electron current" patented technology

A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm2 at 200 volts. The emitter is robust and the current it produces is not sensitive to variability of vacuum or the distance between the emitter tip and the cathode. The novel emitter has a sharp turn-on near 100 volts.

An organic device has a hole current-electron current conversion layer which comprises a laminate of an electron transportation section and a hole transportation section. The electron transportation section includes a charge transfer complex formed upon an oxidation-reduction reaction between a reduced low work function metal and an electron-accepting organic compound, the reduced metal being produced upon an in-situ thermal reduction reaction caused upon contact, through lamination or mixing by co-deposition, of an organic metal complex compound or an inorganic compound containing at least one metal ion selected from ions of low work function metals having a work function of not more than 4.0 eV, and a thermally reducible metal capable of reducing a metal ion contained in the organic metal complex compound or the inorganic compound in vacuum to the corresponding metal state, and the electron transportation section having the electron-accepting organic compound in the state of radical anions. The hole transportation section includes an organic compound having an ionization potential of less than 5.7 eV and an electron-donating property and an inorganic or organic substance capable of forming a charge transfer complex upon its oxidation-reduction reaction with the organic compound, the organic compound and the inorganic or organic substance being contacted through lamination or mixing, and the electron-donating organic compound is in the state of radical cations.

A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

An x-ray generating device includes a field emission cathode formed at least partially from a nanostructure-containing material having an emitted electron current density of at least 4 A/cm². High energy conversion efficiency and compact design are achieved due to easy focusing of cold cathode emitted electrons and dramatic reduction of heating at the anode. In addition, by pulsing the field between the cathode and the gate or anode and focusing the electron beams at different anode materials, pulsed x-ray radiation with varying energy can be generated from a single device. Methods and apparatus for independent control of electron emission current and x-ray energy in x-ray tubes are also provided. The independent control can be accomplished by adjusting the distance between the cathode and anode. The independent control can also be accomplished by adjusting the temperature of the cathode. The independent control can also be accomplished by optical excitation of the cathode. The cathode can include field emissive materials such as carbon nanotubes.

An x-ray generating device includes a field emission cathode formed at least partially from a nanostructure-containing material having an emitted electron current density of at least 4 A/cm². High energy conversion efficiency and compact design are achieved due to easy focusing of cold cathode emitted electrons and dramatic reduction of heating at the anode. In addition, by pulsing the field between the cathode and the gate or anode and focusing the electron beams at different anode materials, pulsed x-ray radiation with varying energy can be generated from a single device.

In accordance with an embodiment of the present invention, apparatus for ion-assisted magnetron deposition takes a form that includes a magnetron, a deposition substrate displaced from the magnetron, and an ion source also displaced from the magnetron and located so that the ion beam from the ion source is directed at the deposition substrate. The ion source is operated without an electron-emitting cathode-neutralizer, the electron current for this function being provided by electrons from the magnetron. In one specific embodiment, the ion source is operated so that the potential of the deposition substrate is maintained close to that of a common ground for the magnetron and the ion source. In another embodiment, the ion source is of the Hall-current type and the discharge current of the ion source is approximately equal in magnitude to the current of the magnetron discharge.

An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from the light emitting portion. The device is a spin valve transistor having a light-emitting quantum well in its collector. The device can convert a magnetic digital signal to both an electrical digital signal and an optical digital signal, wherein either or both of these signals can be provided as a device output. The magnetically sensitive portion of the device is formed of a pair of magnetically permeable layers. When the layers are aligned electron current can pass through with sufficient energy to reach a quantum well where they recombine, generating light. The device may be used to read a magnetic storage medium, such as a disk drive. Or it can be used to provide a display or a memory array composed of single device magnetic write, optical read memory cells. Amplification can be provided to the transistor by adjusting the collector base voltage to provide secondary electrons by impact ionization to provide greater electron current and a correspondingly larger optical emission signal.

In one embodiment of a compact closed-drift ion source, an ionizable gas is introduced into a annular discharge region. An anode is at one end of this region and an electron-emitting cathode is near the opposite and open end. A magnetic circuit extends from an inner pole piece to an outer pole piece, with both pole pieces near the open end. The electron current in the discharge region interacts with the magnetic field therein to generate and accelerate ions out of the open end. A permeable enclosure surrounds the anode end of the discharge region. Adjacent elements of the permeable enclosure, the inner pole piece, and any intermediate permeable elements are in close proximity, one to the next. A magnetizing means is located only between the outer pole piece and the permeable enclosure.

The invention provides a multilayer transparent electricity conductive film, comprising a substrate, n layers of metal Cu layers and m layers of ZnO layers. The n layers of metal Cu layers and the m layers of ZnO layers are alternately deposited on the substrate, wherein n is more than and equal to 1, and m is more than and equal to 1. The film is manufactured by a magnetic control sputtering method. The multilayer transparent electricity conductive film is characterized in that: the average transmittance of a visible light area is more than 70%, peak value transmittance is larger than 80%, the concentration of electron current carrier is not less than 5*10cm, and electric resistivity is not larger than 3*10 Omega. cm. The multilayer film obtained by the invention is manufactured under room temperature; the photoelectric property of the film is greatly improved relatively to a ZnO: Ca monolayer film; and the multilayer film can be used for photoelectric devices such as solar battery, flat-panel display, and the like, and the structure of a sunshade type infrared reflecting film.

The present invention relates to MSM photodetectors based on the high electron mobility transistor (HEMT) structure. More specifically, the present invention relates to MSM photodetectors based on the high electron mobility transistor (HEMT) structure that use a barrier layer of the HEMT structure as a Schottky barrier layer of the photodetector and use the channel layer of the HEMT structure as an absorption layer of the photodetector by doping the bottom part of the channel layer with a p-type dopant. Modification of the HEMT structure for the MSM photodetector can enhance electron current and suppress hole current, resulting in an impulse photocurrent response having a narrow pulse width. The present invention comprises an undoped buffer layer grown on the semi-insulating substrate, a p-doped channel layer that is used as an absorption layer grown on the said buffer layer, an undoped channel layer that is used as an absorption layer grown on the said channel layer, an undoped barrier layer that is composed of a material having a larger band gap energy than the said channel layers grown on the said undoped channel layer, a heavily n-type delta-doped barrier layer that is composed of a material having a larger band gap energy than the said channel layers grown on the said undoped barrier layer, and an undoped barrier layer that is composed of a material having a larger band gap energy than the said channel layers grown on the said heavily n-type delta-doped barrier layer.

An electrostatic ion propulsion engine for satellites and spacecraft is equipped with an electron source for neutralizing the propellant gas ion beam or jet emitted by the engine. The electron source includes an anode housing, a hollow cathode tube with gas flowing therethrough, a cathode element at the outlet end of the cathode tube within the interior space of the anode housing, and a pin- or rod-shaped auxiliary electrode arranged along the lengthwise axis in the hollow cathode tube. An ignition pulse is applied to the auxiliary electrode relative to the cathode tube, which causes a pulse discharge in the cathode tube, and in turn ignites the gas discharge between the anode and the cathode which generates the electron current.

The present invention includes a method and apparatus for storing data. Accordingly, a first aspect of the present invention is a data storage device. The data storage device includes a conduction barrier, a probe tip mounted on a suspension mechanism, a voltage source coupled to the suspension mechanism for emitting a current of electrons through the conduction barrier, a sensing mechanism for sensing a magnitude of the emitted current wherein the magnitude of the current of electrons emitted through the conduction barrier is based on a distance between the probe tip and the sensing mechanism.

The invention discloses a surface plasmon polariton-enhanced photoelectric detector based on an MIM (Metal Injection Molding) structure. The photoelectric detector comprises a substrate, and is characterized in that a lower metal film layer, a lower dielectric isolating layer, an upper metal film layer, an upper dielectric isolating layer and a metal grating layer are formed in sequence on the substrate from top to bottom. The surface plasmon polariton-enhanced photoelectric detector further comprises an upper metal film layer electrode lead, a lower metal film layer electrode lead, and a detector output port which is connected to the upper and lower metal film layers respectively. In the design, the local light trapping effect of a grating layer is achieved through the metal optical grating layer serving as a core, and an electron current tunneling effect is caused by remarkable difference between the light absorption of the upper and lower metal film layers. The photoelectric detector has the characteristics of small size (nanoscale), small number of consumables, simple structure, easiness in machining, wide spectral response, large detection angle and the like.

The invention discloses a vertical constant-current diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The vertical constant-current diode comprises a cellular structure and a terminal structure connected in sequence, wherein the cellular structure comprises a plurality of cells same in structure and connected in sequence; the terminal structure comprises a cut-off ring and a plurality of field limiting rings connected in sequence. The constant-current diode adopts a P-type doped semiconductor material opposite to an epitaxial layer in doping type as a substrate, and a P-type light-doped substrate injects holes to an N-type light-doped epitaxial layer, so that the constant-current diode has two carrier currents, namely hole current and electron current, and the current density of a device is increased; moreover, substrates with different doping types assist in depletion of a channel, accelerate pinching-off of a JFET (junction field-effect transistor) region channel and enable pinch-off voltage to be lower than 4 V.

A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.

The invention discloses a Hall thruster with double magnetic screens, and belongs to the technical field of Hall thrusters. The Hall thruster solves the problems that in an existing Hall thruster channel, due to the fact that electrons and the wall face interact frequently, energy deposition of the wall face is caused, and heat instability and energy loss are caused. According to the Hall thruster, an additional magnetic screen is additionally arranged on a traditional Hall thruster to form a double-magnetic-screen structure, the double magnetic screens are used for carrying out secondary short circuit on a magnetic field close to the wall face, and therefore magnetic lines of force are guided not to penetrate through the channel and an anode any more, the energy deposition problem of theelectrons on the wall face is reduced, and the electron current is controlled. The double magnetic screens are used for solving the energy deposition problem of the electrons in the channel on the wall face, and the problems of discharge heat instability of the thruster and performance loss caused by energy loss are avoided. Meanwhile, the electron current is restrained, and the current utilization rate is increased. In addition, the thickness of the additional magnetic screen and insulation between an inner magnetic screen and the anode are guaranteed, the robustness and the service life of the additional magnetic screen are guaranteed, and the Hall thruster can effectively work for a long time.