16 results about "Electron current" patented technology

This invention provides a simulation method, simulation program, simulation system, and information processing device capable of reproducing carrier transfer delays in actual devices. [Solution] The simulation method uses Poisson's equation, the electron current continuity equation, and the hole current continuity equation to calculate a new free carrier density that takes into account the capture of residual carriers at trap sites and the excitation of captured carriers. Furthermore, the simulation method repeatedly calculates the number of residual carriers and determines whether residual carriers are captured at trap sites and whether captured carriers are excited, based on the newly calculated free carrier density, until the number of residual carriers converges.

The application discloses a kind of double-gate graphene proton transport device in-situ test system and test method under strong magnetic field, the system is double-layer structure, comprising: inner rod, for placing double-gate graphene proton transport device, the inner rod is integrated with temperature control system, for realizing 100mK to 300K variable temperature test environment;Outer rod, it is set in the outer portion of the inner rod, for independently controlling the vacuum or specific atmosphere environment where the device is located.The application also provides a test method, the assembled system is placed into magnetic field environment, scanning is carried out in predetermined magnetic field intensity range, and temperature is controlled to change between 100mK to 300K;Through the first electrical measurement unit and second electrical measurement unit, the curves of proton current and electron current change with magnetic field, temperature and gate voltage are recorded simultaneously.By unique device structure design and system integration scheme, it provides a powerful tool for studying atomic scale proton transport behavior under extreme multi-physical field coupling environment.

The application discloses a vacuum ultraviolet high-power deuterium lamp light source, which comprises a light-emitting anode and a light-emitting cathode, the light-emitting anode is a light-emitting double anode, the light-emitting double anode comprises a main anode and a secondary anode, the secondary anode is a light-emitting grating tube with a small transmission aperture, and the main anode is a metal cylinder with a large size; primary breakdown is realized through the gas between the secondary anode and the light-emitting cathode, then secondary breakdown is realized through the main anode, and vacuum ultraviolet radiation light is output. The application solves the problem of low light power of the existing vacuum ultraviolet deuterium lamp light source, greatly improves the electron current density of the deuterium arc, and improves the light-emitting efficiency.

The invention relates to the technical field of semiconductor devices, in particular to a semiconductor device and a production method thereof. The device comprises a first doping type substrate and a plurality of primitive cell regions arranged on the first doping type substrate, the primitive cell region comprises: a channel region comprising a gate trench, a first hydrazine region, a minority carrier barrier layer of a first doping type, and a second doping type regulation layer; the hole diversion region comprises a second hydrazine region and a carrier storage layer of the first doping type; wherein the channel region and the hole diversion region respectively bear circulation paths of electron current and minority carrier hole current in the conduction and switching-on / off processes of the device, so that carrier partition circulation is realized. Carrier partition circulation is achieved, the performance of the device is effectively improved, the device has the excellent carrier storage effect, meanwhile, dV / dt controllability is achieved, the on-state voltage drop and the total switching loss of the device are reduced, and the output capacity and the reverse bias safe working area of the device are remarkably improved.

The invention discloses an ion source plume quasi-electric neutral control system and method, and relates to the technical field of ion source control. Wherein the signal sampling module is of a passive isolation type sampling structure, the input end is connected with the negative electrode of the ion source system and the reference ground, and the output end is connected with the first signal input end of the signal amplification module. According to the ion source plume quasi-electric neutral control system and method, the charge balance state of a plume region is captured in real time, and after signal amplification and analog-to-digital conversion, the FPGA main control module accurately adjusts the electron current adjusting module and the ion current adjusting module according to a preset algorithm; the problems of poor adaptability and insufficient reliability in traditional passive control are solved, the difference value between the ion beam and the electron beam is stably controlled within a reasonable range, the balance response is rapid, it is ensured that the ion source always maintains plume quasi-electric neutrality in long-term operation, and the operation reliability is remarkably improved.

A semiconductor device includes at least three arms. Channels of the first and second arms extend to a channel of the third arm. A ballistic electron current is generated from the channels of the first and second arms to the channel of the third arm when a current from the first arm flows to the second arm due to an application of a first voltage. A fin structure is located in the third arm and includes a gate above the fin structure. The gate is controlled using a second voltage. The fin structure is formed to induce an energy field structure that is shifted by an amount of the second voltage to control an opening through which the ballistic electron current of the gate passes, thereby subjecting the ballistic electrons to diffraction and then interference, which in turn changes a depletion width.

The invention provides a three-dimensional stacked magnetic random access memory, a manufacturing method thereof and electronic equipment, and relates to the technical field of integrated circuits. The magnetic tunnel junction is formed by overlapping an alternating magnetic free layer, an insulating tunnel barrier layer and an alternating magnetic fixed layer, and the alternating magnetic free layer can regulate and control the alternating magnetic sequence of the alternating magnetic free layer by using a force applied by a magnetic moment of a spin-polarized electron current of the alternating magnetic fixed layer, so that the magnetization overturning of the magnetic tunnel junction is completed in a pure electrical mode; therefore, stable writing of data is realized under the action of current, so that the magnetic random access memory has the advantages of low power consumption, high speed and non-volatility. Moreover, according to the technical scheme provided by the invention, the anti-interference capability of the three-dimensional stacked magnetic memory is effectively improved by utilizing the advantage of strong anti-interference performance of the alternating magnet on an external magnetic field, so that large-area and high-density stacking of devices can be realized.

This invention discloses an ultraviolet photoelectric sensor based on capillary boundary ion transport, its fabrication method, and its application, belonging to the field of photoelectric sensor technology. The photoelectric sensor includes a wide-bandgap semiconductor substrate with capillary boundaries, a porous water-storing material, and electrodes composed of non-polarized electrodes. The porous water-storing material provides a water source for the capillary boundaries. The capillary boundaries of the substrate possess ionic conductivity due to the surface tension of the water filling the capillary boundaries. The non-polarized electrodes can rapidly convert ion current into detectable electron current. The ultraviolet photoelectric sensor provided by this invention utilizes the ionic conductivity of the ion channels formed by the capillary boundaries and the temperature change caused by the absorption of ultraviolet light by the wide-bandgap semiconductor to achieve the detection of ultraviolet light.

The invention discloses a light-emitting device and a manufacturing method thereof, and the method comprises the steps: introducing a modification layer comprising an electron donor above a second electrode, enabling the modification layer to enable the electron donor to be transmitted to an electron transmission layer through heating, ultraviolet irradiation or ionization treatment, namely, enabling the modification layer to provide the electron donor to the electron transmission layer, and enabling the electron donor to be transmitted to the electron transmission layer; as the radius of the electron donor is small and is generally smaller than 70pm, the electron donor can enter a metal atom lattice of the second electrode firstly and is released to the electron transport layer through channels such as defects and dislocation in metal, so that the electron current density in the light-emitting device is improved, the conductivity of the electron transport layer is improved, and the light-emitting efficiency of the light-emitting device is improved. Therefore, the working voltage of the light-emitting device is reduced, Joule heat generated in the light-emitting device is reduced, and the service life of the light-emitting device is greatly prolonged.

The embodiment of the invention discloses a radio frequency ion source system and a control method thereof, electronic equipment and a storage medium, and relates to the technical field of ion sources, the radio frequency ion source system comprises a power supply and control module, a radio frequency discharge unit, an ion extraction unit and a neutralization electron source; wherein the power supply and control module generates a radio frequency signal and a pulse voltage, outputs the radio frequency signal to the radio frequency discharge unit, and outputs the pulse voltage to the ion extraction unit; working gas in the radio frequency discharge unit generates plasma under the excitation of a radio frequency signal, and the plasma is output to the ion extraction unit; the plasma in the ion extraction unit passes through the ion extraction unit under the driving of the pulse voltage and generates a pulse ion beam; and the neutralization electron source generates an electron flow at the rising edge of the pulse voltage, and synchronously outputs the electron flow and the pulse ion beam to obtain a pulse beam current. According to the embodiment of the invention, the pulse beam with concentrated energy spectrum distribution and low energy broadening is realized.

This invention discloses an ultraviolet photoelectric sensor based on surface ion transport, its fabrication method, and its application, belonging to the field of photoelectric sensor technology. The ultraviolet photoelectric sensor includes a wide-bandgap semiconductor substrate with hydrophilic properties, a porous hydrophilic material disposed on the substrate surface, and a non-polarized electrode; a power supply and a meter are connected to the non-polarized electrode circuit. In a high-humidity environment, a continuous water film is adsorbed on the substrate surface, providing ionic conductivity. The porous hydrophilic material prevents water from spreading on the substrate surface, and the non-polarized electrode can rapidly convert the ionic current into a detectable electronic current. The ultraviolet photoelectric sensor provided by this invention utilizes the ionic conductivity of the continuous water film and the temperature change caused by the absorption of ultraviolet light by the wide-bandgap semiconductor to achieve the detection of ultraviolet light. Compared with traditional ultraviolet photoelectric sensors, this invention has the advantages of simple fabrication and suitability for operation in high-humidity environments.

The invention discloses a directional electronic probe system suitable for a star simulator magnetic confinement fusion device. The directional electronic probe system comprises a stainless steel base, an insulating shell, a fast electronic probe assembly, a Langmuir probe assembly and a ceramic base. A plurality of Langmuir probes are distributed at the front end of the probe system, and a plurality of fast electron probes are symmetrically and uniformly distributed on two side surfaces along two mutually perpendicular directions and are used for collecting electron current. The fast electron probe and the Langmuir probe respectively comprise a graphite probe, a copper binding post, a wire and other parts, and are reliable in connection and resistant to high temperature. The whole probe adopts a three-inclined layout and is used for adapting to a complex three-dimensional environment of a star simulator magnetic field. According to the fast electron probe, the Larmor radius of electrons in magnetic confinement plasma is far smaller than that of ions, and the ions can be effectively repelled and the electrons can be collected by setting the width and depth of small holes. The device can work in a high-temperature environment in the magnetic confinement fusion device, and is stable in mechanical performance, reliable in signal, high in spatial resolution and small in occupied space.

The invention discloses a simulation modeling method and device for a trigger breakdown process of a surface flashover type trigger vacuum switch, electronic equipment and a storage medium. The method comprises the following steps: determining a trigger condition of the surface flashover type trigger vacuum switch; according to the trigger condition, performing simulation calculation on the trigger breakdown process of the surface flashover type trigger vacuum switch to obtain the surface discharge characteristic of the surface flashover type trigger vacuum switch; according to the electron current density of the local surface of the anode, performing simulation calculation on the evaporation process of the local surface of the anode in the surface flashover type trigger vacuum switch to obtain the evaporation characteristic of the local surface of the anode under the action of the electron current; according to the evaporation characteristic and the density of the initial electrons diffused into the main gap, performing simulation calculation on the main gap breakdown process of the surface flashover type trigger vacuum switch so as to obtain an evolution rule of microscopic plasma parameters of the surface flashover type trigger vacuum switch; and multi-physics field coupling simulation of the trigger breakdown process of the surface flashover type trigger vacuum switch is realized.

The application discloses a weak turn-off IGBT, which comprises a first semiconductor region, a source body region, a source region, a first conductive material, a first dielectric layer, a second conductive material, a second semiconductor region and a third conductive material; the first conductive material serves as a gate of the weak turn-off IGBT; the second conductive material is in contact with the source region and the source body region and serves as an emitter of the weak turn-off IGBT; the third conductive material serves as a collector of the weak turn-off IGBT; at least one top of the source body region is provided with a doped region; the doped region is provided with a fourth conductive material; in the longitudinal direction of the weak turn-off IGBT, the fourth conductive material is in contact with the source body region where the doped region is located and forms an ohmic contact; and the fourth conductive material is connected with the second conductive material through a resistance element. The application introduces weak electron current in the turn-off process of the IGBT device from the internal structure of the IGBT device, effectively relieves the turn-off dynamic avalanche and widens the RBSOA.

The weak turn-off IGBT comprises a first semiconductor region, a source body region, a source region, a first conductive material, a first dielectric layer, a second conductive material, a second semiconductor region and a third conductive material, the first conductive material is used as a grid electrode of the weak turn-off IGBT; the second conductive material is in contact with the source region and the source body region and is used as an emitting electrode of the weak turn-off IGBT; the third conductive material is used as a collector of the weak turn-off IGBT; a doped region is arranged at the top in at least one source body region; a fourth conductive material is arranged on the doped region; wherein in the depth direction of the weak turn-off IGBT, the fourth conductive material is in contact with the source body region where the doped region is located, and ohmic contact is formed; the fourth conductive material is connected to the second conductive material via a resistive element. Starting from the internal structure of the IGBT device, weak electron current is introduced in the turn-off process of the device, turn-off dynamic avalanche is effectively relieved, and the RBSOA is widened.

The embodiment of the invention provides a reverse conducting IGBT device, a manufacturing method and a chip. The reverse conducting IGBT device comprises an N-type substrate; the grooves are arranged at intervals in the transverse direction and are parallel to one another, and the gate oxide layers are located on the side walls and the bottoms of the grooves; the polycrystalline silicon layer is located on the gate oxide layer and fills the internal space of the groove; the device comprises a buried P layer, a carrier storage N layer, a P-type well, an N + electron emission region and a hole injection P + region. Through a Schottky diode structure composed of an N-type region and front Schottky metal and a buried P layer, a barrier n layer is communicated with a columnar n region, and electron current directly flows to a surface electrode through the n region and does not enter a top p layer and a P + layer, so that forward bias of a top p / barrier n interface is avoided, hole injection from the top p layer is inhibited, and the performance of the Schottky diode is improved. Compared with the prior art, the IGBT structure has low hole injection efficiency, the reverse recovery loss of the diode part can be reduced, and the on resistance of the IGBT part can be reduced by the carrier storage N layer.