9 results about "Low work function" patented technology

This invention provides a multi-electrode coupled optoelectronic device, comprising a bottom electrode made of a low work function metal, a p-type semiconductor layer with light-absorbing function disposed on the upper surface of the bottom electrode, a thin insulating layer disposed on the upper surface of the light-absorbing p-type semiconductor layer, an n-type semiconductor layer with light-absorbing function disposed on the surface of the insulating layer, a top electrode made of a high work function metal and at least one auxiliary electrode disposed on the upper surface of the light-absorbing n-type semiconductor layer. This invention also provides a method for fabricating the multi-electrode coupled optoelectronic device and its application.

This invention belongs to the field of semiconductor devices and micro / nanoelectronics technology, and discloses a CNTFET based on MoTi alloy contacts and its fabrication method. The CNTFET includes a substrate, a gate electrode, a gate dielectric layer, a carbon nanotube channel, and source and drain electrodes, wherein the source and drain electrodes are MoTi alloys or multilayer metal structures coated with MoTi layers. By controlling the Mo / Ti atomic ratio and optimizing deposition process conditions, this invention constructs a contact structure with tunable work function, high oxidation resistance, and excellent thin film quality, effectively reducing the Schottky barrier between the metal and carbon nanotubes, and achieving stable near-ohmic contacts. This device overcomes the shortcomings of existing technologies such as easy oxidation of low work function metals like Sc and Y, poor interface stability, and insufficient process compatibility. It significantly reduces contact resistance and improves the N-type conductivity stability, on-state current, and long-term reliability of the device in air environments, making it suitable for the integration of high-performance carbon-based logic devices and next-generation micro / nanoelectronic systems.

An apparatus comprises gate structures in a substrate, the gate structures comprising a metal material and a low work function material adjacent to the metal material. Cell capacitors are electrically coupled to source / drain regions of the substrate and bit lines are electrically coupled to other source / drain regions of the substrate. Contacts extend into the low work function material of the gate structures, the low work function material and materials surrounding the contacts do not comprise a polysilicon material. Additional apparatus and methods of forming the apparatus are disclosed.

This application provides a semiconductor device and its fabrication method, as well as an electronic device, relating to the field of semiconductor technology, capable of reducing the subthreshold swing of transistors. The semiconductor device includes a transistor. The transistor includes a channel, a source, and a drain; the source and drain are disposed at opposite ends of the channel; a first intercalation layer is disposed between the source and the channel, and the first intercalation layer is in contact with both the source and the channel. The channel is made of a lightly doped semiconductor or an intrinsic semiconductor. The drain is made of a heavily doped semiconductor. The source is made of a P-type heavily doped semiconductor; wherein, the first intercalation layer is made of a high work function material, and the Fermi level of the high work function material is no more than 1 / 3 of the band gap of the channel semiconductor; or, the source is made of an N-type heavily doped semiconductor; the first intercalation layer is made of a low work function material, and the Fermi level of the low work function material is no more than 1 / 3 of the band gap of the channel semiconductor.

A solar cell comprises a first anti-reflection layer, a passivation layer, an electrode emission layer, a silicon-based bottom layer, a tunneling oxide layer, a doped polycrystalline silicon layer and a second anti-reflection layer, which are stacked, wherein a first electrode and a second electrode are respectively provided on the first anti-reflection layer and the second anti-reflection layer, a low-work-function conductive layer is provided in the doped polycrystalline silicon layer, and the low-work-function conductive layer is adjacent to the second electrode.

The application discloses a kind of semi-transparent perovskite batteries based on low work function transparent electrode, including glass substrate, the glass substrate is sequentially stacked with top electrode layer, hole transport layer, perovskite absorption layer, electron transport layer and low work function transparent electrode layer from bottom to top, the low work function transparent electrode layer is made of doped B, Zr, Ga In2O3 Film, the work function of the low work function transparent electrode layer is less than 4.19eV.The application aims at solving the problems of high work function of existing transparent electrode, energy level mismatch with electron transport layer and damage to functional layer during preparation process.

The present application belongs to the field of flexible electronic devices, and particularly relates to a fiber-like quantum dot electroluminescent device and a preparation method thereof. The electroluminescent device of the present application is formed by a spiral structure of multiple layers of materials, and from the outer layer to the inner layer, the spiral structure comprises a polymer flexible substrate, a stress buffer layer, an anode layer of high work function material, a hole injection layer for reducing the potential barrier to be overcome in the transmission process of holes, a hole transport layer for optimizing the efficiency of holes into the light-emitting layer, a quantum dot light-emitting layer for the recombination of holes and electrons to emit light, an electron transport layer for optimizing the efficiency of electrons into the light-emitting layer and blocking the further transmission of holes, and a cathode layer of low work function material. The special laminated structure of the present application realizes the self-packaging and stress dispersion of the device, improves the stability of the device in operation, and the obtained fiber-like electroluminescent device has a brightness of more than 50000 cd / m 2 , high color purity, good flexibility, strong stability, and has a wide application prospect in the field of flexible electronic devices.

The invention discloses a low work function transparent conductive cathode and a preparation method thereof, the low work function transparent conductive cathode comprises a transparent substrate, an ultra-thin metal aluminum layer and an indium oxide layer which are stacked, the ultra-thin metal aluminum layer is located above the transparent substrate, the thickness of the ultra-thin metal aluminum layer is 0.5 nm-2 nm, the indium oxide layer is located above the ultra-thin metal aluminum layer, and the thickness of the indium oxide layer is 0.5 nm-2 nm. And the indium oxide layer is a zirconium and gallium doped indium oxide film with the thickness of 200nm-500nm. The invention aims to provide a low-work-function transparent conductive cathode and a preparation method thereof. The cathode structure can effectively reduce the interface contact potential barrier and realize efficient electron injection, and the preparation process is suitable for industrial production.

The application provides a metal gate structure and a forming method thereof. The metal gate structure comprises a substrate, the substrate has a low work function region and a high work function region, a gate dielectric layer is formed on the substrate of the high work function region and the low work function region; a first work function layer and a metal gate, the first work function layer is located on the gate dielectric layer of the high work function region, and the metal gate is located on the first work function layer and the gate dielectric layer of the low work function region. Since the first work function layer is formed between the metal gate and the gate dielectric layer of the high work function region, the diffusion of metal atoms in the metal gate into the gate dielectric layer of the high work function region is blocked, so that the voltage acceleration index is improved, and the time-dependent breakdown performance of the device is improved.