149 results about "Ytterbium" patented technology

The invention discloses a rare-earth metal arylamine group compound as well as preparation method and application thereof. The invention discloses the rare-earth metal arylamine group compound which is characterized in that a general formula of the rare-earth metal arylamine group compound is (2,6-R12PhNH)5LnLi2(THF)2, wherein Ln is a rear-earth metal selected from one of neodymium, samarium, ytterbium or yttrium; R1 is selected from one of hydrogen, methyl or isopropyl. The rare-earth metal arylamine group compound has the advantages that the rare-earth metal arylamine group compound has a definite structure; raw materials used in the preparation method are simple, easily obtained and cheap; the reaction process is simple and easily operated; the rare-earth metal arylamine group compound product is conveniently purified and the yield of the product is high; the rare-earth metal arylamine group compound has a high activity when acting as a single component catalyst to catalyze a hydrogen phosphine reaction of aldehyde or ketone and phosphite ester; the use amount of the catalyst is less; the yield is high; a substrate has wide universality; a new and simple method is provided for synthesis of a-hydroxyphosphonate.

The invention provides a surface-modified sulfide electrolyte and a preparation method thereof, and an all-solid-state battery, the surface-modified sulfide electrolyte comprises a sulfide electrolyte and a modification layer coated on the surface of the sulfide electrolyte, the chemical general formula of the modification layer is LiaMbNcXd, 0 < = a < = 3, 0 < = b < = 1, 0 < = c < = 1, 0 < = d < = 6, and 0 < = c < = 1. M is at least one element of magnesium, aluminum, calcium, iron, zirconium, niobium, tantalum, tungsten, gadolinium, yttrium, indium, hafnium, lanthanum and ytterbium, and X is at least one element of oxygen, sulfur, fluorine, chlorine, bromine and iodine. According to the surface-modified sulfide electrolyte, the modification layer with high ionic conductivity and high oxidation potential is coated outside the sulfide electrolyte, so that when the surface-modified sulfide electrolyte is applied to a positive electrode of an all-solid-state battery, the modification layer can improve the oxidation potential of the electrolyte on the premise of not reducing the ionic conductivity of the electrolyte; the effects of improving the interface stability between the positive electrode active material and the sulfide electrolyte and further improving the cycle performance of the battery are achieved.

The invention provides a holmium and ytterbium co-doped mid-infrared microsphere Raman laser and a preparation method thereof, and relates to the technical field of laser preparation, the holmium and ytterbium co-doped mid-infrared microsphere Raman laser comprises an infrared transmission optical fiber, a pump light source, holmium and ytterbium co-doped tellurate glass microspheres and passive tellurate glass microspheres, pump light emitted by the pump light source is guided to a conical region through the infrared transmission optical fiber, and the holmium and ytterbium co-doped tellurate glass microspheres and the passive tellurate glass microspheres are arranged in the conical region; sequentially carrying out optical coupling with holmium and ytterbium co-doped tellurate glass microspheres and passive tellurate glass microspheres; in the holmium and ytterbium co-doped tellurate glass microspheres, the doping amount of the holmium element is 0.3%, and the doping amount of the ytterbium element is 0.45% according to the mass percentage. Compared with the prior art, through the cascade structure of the holmium-ytterbium co-doped microspheres and the passive microspheres, three-step wavelength conversion of pump light-rare earth ion lasing-Raman frequency shift is realized in a single system for the first time, and the wavelength limitation that a traditional single microsphere depends on a rare earth ion fixed energy level is broken through.

The method comprises the following steps: weighing an oxide precursor of metal indium, an oxide precursor of metal M, an ammonium salt and a lithium salt according to a chemical formula of indium-based halide, fully mixing, and calcining in an inert atmosphere to obtain the indium-based halide solid electrolyte. Forming an indium-based halide solid electrolyte through a solid-phase reaction; wherein M is selected from at least one of magnesium, calcium, strontium, barium, aluminum, gallium, indium, bismuth, scandium, yttrium, zinc, germanium, tin, lanthanum, cerium, samarium, gadolinium, holmium, erbium and ytterbium. The method can greatly simplify the synthesis process, reduce the raw material cost and realize industrial batch preparation.

The invention relates to the technical field of rare earth element separation methods, in particular to a method for separating ytterbium and lutetium by using a phosphate adsorbent, which comprises the following steps: loading a phosphate solution on a porous solid-phase carrier by using a vacuum impregnation method, and carrying out reduced pressure evaporation and drying to obtain a phosphate solid adsorbent; filling an exchange column with the solid adsorbent to obtain the exchange column filled with the solid adsorbent; enabling a nitric acid solution containing ytterbium and lutetium to flow through an exchange column filled with a solid adsorbent to complete a column adsorption process; and performing elution, performing desorption by using a desorption solution to obtain the regenerated exchange column filled with the solid adsorbent, respectively collecting the ytterbium solution and the lutetium solution, completing the separation process, and repeating the steps. By adopting the steps, the separation of ytterbium and lutetium is directly realized from the nitric acid solution containing ytterbium Yb and lutetium Lu through column adsorption separation, leaching and desorption processes, and high-purity ytterbium and lutetium products are prepared.

The invention discloses a preparation control optimization method of a metal ytterbium target for an OLED (Organic Light Emitting Diode) display screen. The method comprises the following steps: acquiring impurity spectrum scanning data of a metal ytterbium raw material, analyzing impurity distribution characteristics and determining a melting control temperature; after a cast ingot is formed, the internal pore distribution condition is obtained, a pore density gradient field is constructed, a forging and pressing path planning vector is generated, and precise forging and pressing path design is achieved; in the forging and pressing process, forging and pressing vibration data and displacement data are collected in real time, the influence of vibration on cast ingot position deviation is analyzed, then vibration deviation correction is conducted on a forging and pressing path, and an optimized path plan is formed. And by iteratively optimizing the forging and pressing path, the density of the cast ingot is gradually improved and meets the preset requirement. The method effectively solves the problems of difficult impurity control, non-uniform pore distribution, forging and pressing deviation and the like in the preparation process of the metal ytterbium target material, and the purity and compactness of the target material are remarkably improved.

The invention discloses an ytterbium-silicon alloy and a preparation method and application thereof, and relates to the technical field of alloys. According to the preparation method of the ytterbium-silicon alloy, the ytterbium-silicon alloy with the system composition basically consistent with the eutectic point is successfully prepared by controlling parameters such as the heating rate and the temperature in the eutectic melting process of ytterbium and silicon, the melting point of silicon can be reduced to 1253 DEG C or below, and follow-up machining and using of the ytterbium-silicon alloy are greatly facilitated. When the ytterbium-silicon alloy prepared by the method is used as a raw material for introducing silicon to prepare a carbon fiber reinforced silicon carbide composite material, the composite material with the bending strength reaching up to 249.85 MPa or above can be obtained, and the ytterbium-silicon alloy has a wide application prospect in the fields of aviation and the like.

The invention provides a rare earth dispersion strengthened electrothermal alloy ribbon and a preparation method thereof. The rare earth dispersion strengthened electrothermal alloy ribbon comprises the following raw materials: chromium Cr, silicon Si, titanium Ti, aluminum Al, carbon C, yttrium Y, cerium Ce, Yb ytterbium, niobium Nb, vanadium V and iron Fe. The preparation method comprises the steps that the raw materials are subjected to smelting, forming, heat treatment and oxidation film treatment, a dispersed phase of rare earth oxides Y2O3, CeO2 and Yb2O3 and carbides NbC and VC is formed, an electrothermal alloy thin strip is subjected to triple dispersion strengthening, an Al2O3 + Cr2O3 + Nb2O5 + V2O5 + Yb2O3 composite oxidation film is formed on the surface of the thin strip, and finally the electrothermal alloy thin strip with thermal shock resistance and oxidation film stability is prepared.

A quantum method includes providing a plurality of atoms including first and second 171Yb atoms spatially separated from one another and exciting the first 171Yb atom to a target Rydberg state without exciting the second 171Yb atom to the target Rydberg state. A quantum logic gate includes a first 171Yb qubit excited to a target Rydberg state and a second 171Yb qubit spatially separated from the first 171Yb qubit, wherein the second 171Yb qubit is not excited to the target Rydberg state while the first 171Yb qubit is excited to the target Rydberg state. A quantum computing system includes a chamber housing a plurality of atoms including first and second 171Yb atoms spatially separated from one another and at least one gate laser source configured to excite the first 171Yb atom to a target Rydberg state without exciting the second 171Yb atom to the target Rydberg state.

The application relates to the technical field of thermal protection coating materials, and discloses a self-healing ytterbia-based environmental barrier coating and a preparation method thereof. The preparation method of the self-healing ytterbia-based environmental barrier coating comprises the following steps: adding ytterbium-aluminum-silicon microcrystalline glass self-healing agent and ytterbium disilicate powder into a dispersant, then adding a binder, and mixing and stirring to obtain environmental barrier coating slurry; uniformly coating the environmental barrier coating slurry on a CMC base material, heating at 70-80 DEG C to remove the dispersant, and obtaining a pretreated CMC base material; heating the pretreated CMC base material to 1500-1600 DEG C and keeping the temperature, and obtaining the self-healing ytterbia-based environmental barrier coating. The preparation method is low in cost, simple in process and controllable; the ytterbium-aluminum-silicon microcrystalline glass is in-situ crystallized at high temperature, and corrosion-resistant Yb2Si2O7 crystals and mullite crystals are precipitated; residual glass phases serve as self-healing phases and melt into Yb2Si2O7 coating to penetrate into the CMC base, a mechanical pinning effect is formed, the bonding strength of the coating and the CMC base is enhanced, and the high-temperature water-oxygen corrosion resistance is good.

The invention discloses a photonic crystal surface emitting laser based on electro-optical effect modulation and an emission angle and wavelength regulation and control method thereof, and belongs to the field of laser devices. The photonic crystal surface emitting laser comprises a substrate layer, an isolation layer and an active LiNbO3 layer; the isolation layer is a SiO2 isolation layer or an air isolation layer, and the air isolation layer is formed by etching the SiO2 isolation layer through a SiO2 etching agent; the active LiNbO3 layer is made of erbium-doped LiNbO3 or ytterbium-doped LiNbO3, and periodic holes are etched in the surface of the active LiNbO3 layer to form the photonic crystal layer. The photonic crystal surface emitting laser is prepared by using the active electro-optical effect material, the electro-optical effect material is combined with the photonic crystal surface emitting laser, and the emission angle and the emission wavelength are regulated and controlled through the electro-optical effect of LiNbO3 and the diffraction effect of the photonic crystal.

An article has a substrate and a layer atop the substrate. The layer has: a matrix comprising at least one of hafnium silicate (HfSiO4) and ytterbium disilicate (Yb2Si2O7); and barium magnesium alumino silicate (BMAS).

The invention provides an erbium-ytterbium ion doped Al2O3-YAG composite ceramic sensing material and a preparation method thereof, and belongs to the technical field of crossing of functional ceramic materials and optical sensing technologies, the erbium-ytterbium ion doped Al2O3-YAG composite ceramic sensing material comprises a matrix phase and doped ions, the matrix phase is Al2O3-YAG (aluminum oxide-yttrium aluminum garnet) composite ceramic; wherein the mass ratio of Al2O3 is 30%-70%, and the mass ratio of YAG is 30%-70%; the doping ions are Er < 3 + > and Yb < 3 + >, and based on the total molar weight of the matrix phase, the doping concentration of Er < 3 + > is 0.5-3 mol%, and the doping concentration of Yb < 3 + > is 5-20 mol%; the sensing material realizes temperature sensing under the excitation of 980 nm laser and on the basis of the energy level emission conditions of 2H11 / 2 to 4I15 / 2 and 4S3 / 2 to 4I15 / 2 of Er < 3 + >. The Al2O3-YAG composite ceramic is used as an Er < 3 + > / Yb < 3 + > doped matrix for optical temperature measurement for the first time, and the high-temperature stability is superior to that of fluorescent powder and glass materials; the mechanical strength and the thermal shock resistance are obviously improved; elements are uniformly distributed, and the concentration quenching effect is avoided.

The invention relates to a microbial growth activation accelerant based on rare earth elements as well as a preparation method and application thereof, and belongs to the field of resources and environments. The microbial growth activation accelerant based on the rare earth elements is prepared from the following components: 1 to 150g of a rare earth compound, 0.2 to 2g of pantothenic acid, 0.2 to 2g of nicotinic acid, 0.02 to 0.1 g of nicotinamide and 1000g of deionized water, the rare earth compound is one or combination of more of chlorides of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium and yttrium, nitric acid compounds and sulfuric acid compounds. A large number of cheap light rare earth elements are used as raw materials of the microbial accelerator, a new utilization approach is provided for the light rare earth elements, the light rare earth elements are converted into high-added-value products, pollution of the light rare earth elements to the environment is reduced, and meanwhile new elements are introduced into the field of microbial accelerators. More importantly, the preparation method of the microbial growth activation accelerant based on the rare earth elements provided by the invention is simple in production process and convenient for large-scale production.

A heat sink assembly may include a first cooling stack. The first cooling stack may include a silver-diamond composite material. The heat sink assembly may include a second cooling stack. The second cooling stack may include the silver-diamond composite material. The heat sink assembly may include a crystal rod. The crystal rod may be an ytterbium-doped, yttrium-aluminum-garnet laser medium. The crystal rod may be at least partially sandwiched by the first cooling stack and the second cooling stack.

The present invention relates to a magnesium oxide-based composite comprising ytterbium (Yb) element and magnesium oxide (MgO) grains, and a method for preparing the same.

The invention relates to a novel functional material for X-ray protection, in particular to a liquid metal flexible shielding material and a preparation method and application thereof. The material comprises liquid metal and solid metal, the liquid metal serves as a solvent to be filled in gaps of the solid metal, the liquid metal is gallium, gallium indium, gallium indium tin, gallium indium tin zinc or mercury, and the solid metal is selected from one or more of indium, tin, gold, platinum, iridium, zirconium, niobium, molybdenum, ruthenium, osmium, rhenium, rhodium, tungsten, antimony, palladium, tantalum, hafnium, lutetium, lead, ytterbium, thulium, bismuth, silver, erbium, holmium, dysprosium, terbium, gadolinium, samarium, neodymium, lanthanum, praseodymium, cerium and europium. On the basis of compounding of the liquid metal solvent and the solid metal solute based on the liquid metal combinatology, the liquid metal and the solid metal are jointly used for protecting X-ray radiation, the comprehensive performance of X-ray protection is improved, and meanwhile the variety and number range of selectable metal elements is widened.

The invention provides a rare earth element composite modified aluminum alloy single wire material and a preparation method thereof, and the aluminum alloy single wire material comprises the following element components in percentage by mass: 0.65%-0.95% of magnesium, 0.50%-0.80% of silicon, 0.10%-0.50% of gadolinium, 0.10%-0.50% of ytterbium and the balance of aluminum and inevitable impurity elements. The preparation method comprises the stages of smelting treatment, continuous casting and rolling, solid solution aging, drawing forming and low-temperature aging. In the smelting treatment stage, element components of aluminum, magnesium and silicon in the aluminum alloy single wire are added in the form of elementary substances, and element components of gadolinium and ytterbium are added in the form of intermediate alloy. The rare earth elements gadolinium and ytterbium of the same family are compositely doped on the basis of aluminum-magnesium-silicon alloy components, and the gadolinium and ytterbium generate a synergistic effect, so that the mechanical property of the aluminum alloy single wire material can be improved, the total amount of the doped rare earth elements is reduced, and the influence on the conductivity of the aluminum alloy single wire material is further reduced.

The present application discloses a thermal insulation coating and a method for applying the same. Raw materials for preparing the thermal insulation coating includes PVDF resin, water-based epoxy resin solution, hollow glass microbead, ytterbium modified nano-powder, diluent, polyvinyl alcohol, titanium dioxide powder, rare earth, negative ion powder, and leveling agent.

The application provides a high-thermal-conductivity radiation refrigeration coating for a 5G communication base station cabinet and a preparation method thereof, and belongs to the technical field of coatings. A SiC@BN / TiB2 three-phase fiber framework obtained through three-stage calcination is bonded with methylphenyl silicone resin through a silane coupling agent to form a longitudinal high-speed thermal conduction framework. Starburst calcium titanate and edge in-situ magnesium fluoride form a refractive index ladder and a rough multi-faceted structure, which not only reflects ultraviolet-near infrared light, but also endows weather resistance. Holmium / ytterbium co-doped calcium fluoride nanosheets are transversely overlapped to scatter near infrared light and convert the near infrared light into medium-far infrared radiation which can penetrate the atmospheric window, thereby further dissipating heat. Through mutual cooperation of a longitudinal continuous heat conduction path, a transverse heat dissipation network, optical multiple scattering and energy downshift radiation, stable chemical bond network support is achieved to realize high-efficiency, long-term reliable heat dissipation performance.

Described is a thin film comprising a Yb-doped double perovskite, wherein the double perovskite has the formula M2AYbxB(1-x)X6; wherein each occurrence of M independently represents Cs or Rb; A represents Ag or Cu; B represents Bi, In, Sb, or Ga; x has a value between 0.01 and 0.20; and each X independently represents F, Cl, Br, or I. Also described is a method of making the thin films. The thin film may be useful in photovoltaic devices.

The application discloses a ytterbium-doped fiber mode-locked laser, which comprises a first pump source, a first regenerator, a second pump source and a second regenerator. The first regenerator comprises a first ytterbium-doped fiber and a pulse stretching device, and the second regenerator comprises an isolator, a pulse compression device, a spectrum stretching fiber and a band-pass filter. The design of the staggered band-pass filter is realized through the two regenerators, and the spectrum is widened due to the self-phase modulation effect; in addition, the energy input of the first pump source and the second pump source can realize the mode-locked pulse output. The application reduces the peak power by pulse stretching to reduce the nonlinear effect, realizes the generation of high-energy output pulses in the fiber mode-locked laser, and the interval between the pulse stretching device and the central wavelength of the band-pass filter can effectively prevent the noise and continuous component from oscillating, and improve the pulse quality.

A multilayer ceramic capacitor and a method of manufacturing the multilayer ceramic capacitor including a capacitor body including a dielectric layer and an internal electrode layer, and an external electrode disposed on an outer surface of the capacitor body, wherein the dielectric layer comprises a first element including at least one selected from cerium (Ce), gadolinium (Gd), samarium (Sm), and lanthanum (La); and a second element including at least one selected from erbium (Er), yttrium (Y), thulium (Tm), and ytterbium (Yb), and a molar ratio of the first element to the second element is 1.5 to 4.0.

The invention belongs to the technical field of coating preparation, and provides a high-thermal-conductivity radiation refrigeration heat dissipation coating for an LED illumination module and a preparation method of the high-thermal-conductivity radiation refrigeration heat dissipation coating. The preparation method comprises the following steps: firstly, cooperatively coating a hexagonal boron nitride sheet with dopamine and tannic acid, and performing in-situ deposition of zinc oxide to obtain a sheet-shaped heat-conducting filler with low interface thermal resistance; secondly, hydrothermally generating magnesium silicate by utilizing the lignocellulose template, locally carbonizing in a nitrogen atmosphere, and grafting aminopropyl silane to form a heat-conducting framework; ytterbium-doped calcium titanate hollow spheres are prepared through a citric acid complexation method, an aluminum oxide-phosphate double-layer shell is constructed, three kinds of functional particles are dispersed with methyl-phenyl siloxane resin, a coupling agent and a low-volatility solvent at a high speed according to a set proportion, and the high-thermal-conductivity radiation refrigeration heat dissipation coating of the LED illumination module is obtained after vacuum defoaming.

A quantum method includes providing a plurality of atoms including first and second 171Yb atoms spatially separated from one another and exciting the first 171Yb atom to a target Rydberg state without exciting the second 171Yb atom to the target Rydberg state. A quantum logic gate includes a first 171Yb qubit excited to a target Rydberg state and a second 171Yb qubit spatially separated from the first 171Yb qubit, wherein the second 171Yb qubit is not excited to the target Rydberg state while the first 171Yb qubit is excited to the target Rydberg state. A quantum computing system includes a chamber housing a plurality of atoms including first and second 171Yb atoms spatially separated from one another and at least one gate laser source configured to excite the first 171Yb atom to a target Rydberg state without exciting the second 171Yb atom to the target Rydberg state.

The application provides a near-infrared ytterbium complex and a preparation method and application thereof. The near-infrared ytterbium complex has a structure shown in formula I or formula II, and is simply referred to as YbQ3 and [Yb(DPyPDA)2](DIEA) respectively. It is tested that the photoluminescence quantum efficiency of YbQ3 is up to 10.69%, the luminescence lifetime is up to 94 microseconds, and YbQ3 has good thermal stability; under the excitation of 466nm visible light, YbQ3 can emit near-infrared light at 978nm. Therefore, YbQ3 is applied to near-infrared imaging, and excellent effects can be achieved. [Yb(DPyPDA)2](DIEA) has excellent thermal stability and chemical stability, and a longer luminescence lifetime; when [Yb(DPyPDA)2](DIEA) is used as a luminescent material, the prepared OLEDs device can emit characteristic emission of ytterbium ions at 978nm in the near-infrared region, and has a higher near-infrared irradiance under different operating voltages.

The invention relates to the technical field of organic synthesis, in particular to a preparation method of tocopheryl glycoside. According to the method, tocopherol monomers and acetylated glycosyl donors are used as raw materials, and stereoselective glycosylation coupling is performed under the action of scandium trifluoromethanesulfonate and / or ytterbium trifluoromethanesulfonate, so that tocopherol glycoside can be obtained with high yield and high stereoselectivity. The method has the advantages of high utilization rate of tocopherol, mild reaction conditions, high product purity and safe reaction and post-treatment steps, and is suitable for large-scale production.

Provided is an aluminum alloy powder comprising 0.1-2.0 mass% or one or more metal elements from among rare earth metal elements comprising the lanthanide elements and yttrium, wherein the iron content is suppressed to not more than 2.0 mass%. The rare earth metal element is preferably one of praseodymium, neodymium, europium, samarium, terbium, gadolinium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.

The invention relates to a composite chlorine evolution electrode and a preparation method and application thereof, and the preparation method comprises the following steps: placing a titanium-based material as a carrier in an anode, carrying out electro-deposition in a cobalt-ytterbium mixed salt solution, and calcining to obtain the composite chlorine evolution electrode. According to the composite chlorine evolution electrode provided by the invention, the active material simultaneously contains the Co element and the Yb element, the introduced Yb element can generate a synergistic effect with the Co element, the charge distribution around the Co element is adjusted, the conductivity of the composite chlorine evolution electrode is improved, the adjustment of the charge distribution and the improvement of the conductivity jointly optimize a chlorine evolution reaction mechanism, and the catalytic chlorine evolution activity is enhanced; the preparation method disclosed by the invention is simple, quick, green and efficient, low in raw material cost, low in manufacturing cost and suitable for large-scale production, and shows the potential of industrial large-scale application.

A manufacturing method of a display device includes forming a light emitting element layer on a substrate, co-depositing bismuth (Bi) and ytterbium (Yb) on the light emitting element layer to form a first inorganic absorbing layer, and forming a reflection control layer on the first inorganic absorbing layer. In the co-depositing, a deposition temperature of bismuth (Bi) is in a range of about 500° C. to about 850° C., a deposition temperature of ytterbium (Yb) is in a range of about 300° C. to about 550° C., and an extinction coefficient of the first inorganic absorbing layer is less than or equal to about 3.