137 results about "Light conversion efficiency" patented technology

The invention provides an omni-directional following type reversing support which comprises a supporting assembly, an adjusting assembly and a protection assembly, the supporting assembly is composed of a stand column, a transmission shaft is arranged on the side wall of the top of the stand column, the surface of the transmission shaft is movably sleeved with a sleeve, a linkage mechanism is arranged in the top end of the stand column, and the adjusting assembly is composed of a transverse plate and a photovoltaic plate. The bottom of the photovoltaic panel is connected with the transverse plate through a rotating frame, the rotating shaft is rotationally connected with the interior of the annular plate, the protection assembly is composed of a fixing base, a gear ring is arranged in the fixing base, and one end of the supporting plate is fixedly connected with a connecting gear. The angle of the photovoltaic panel is adjusted in a double-shaft adjusting mode, the omni-directional following function is achieved to improve the light conversion efficiency as much as possible, transmission with the adjacent reversing supports is achieved, synchronous control over the angles of the supports in the same row is achieved through connection of the sleeves, and synchronous control over the multiple supports is achieved; the driving mechanism can be used for driving the supporting plate to rotate and supporting the two sides of the photovoltaic panel, and the use strength of the reversing support is improved.

The invention provides an atypical MOPA fiber laser device integration device, system and method. The device comprises an optical resonant cavity, a first device group and a second device group, wherein the first device group comprises a first amplification stage gain optical fiber, a first reverse pumping beam combiner, a first pumping source and a first cladding light stripper, and the second device group comprises a second amplification stage gain optical fiber, a second reverse pumping beam combiner, a second pumping source and a second cladding light stripper; the optical resonant cavity is used for receiving the pump light transmitted by the first amplification stage gain optical fiber and the second amplification stage gain optical fiber, transmitting the pump light which is not absorbed to the second amplification stage gain optical fiber and the first amplification stage gain optical fiber, and generating signal light under the action of the absorbed pump light; and the signal light is transmitted to the first amplification stage gain fiber and the second amplification stage gain fiber in positive and negative directions. The device number and the manufacturing cost are remarkably reduced, the light-to-light conversion efficiency and the system reliability are improved, and meanwhile high-power beam combination and miniaturization integration are facilitated.

According to the laser chip capable of inhibiting in-plane amplified spontaneous emission, the first inclined edge and the second inclined edge are designed, opposite edges parallel to the first cleavage edge and the second cleavage edge respectively are damaged, a first parasitic cavity and a second parasitic cavity existing in a natural cleavage laser chip are eliminated, and the laser chip can inhibit in-plane amplified spontaneous emission. Therefore, the formation of in-plane amplified spontaneous emission of the laser chip is remarkably inhibited, meaningless consumption of carriers in a laser emission layer in the laser chip is prevented, the luminous efficiency of the laser chip on laser wavelength can be improved, the light-light conversion efficiency of the laser from pump light to emission laser is improved, and the output power of the laser is finally improved. And secondly, due to the suppression of amplified spontaneous radiation in a laser chip plane and the improvement of the light-light conversion efficiency of the laser, the power consumption of the laser can be obviously reduced under the condition of certain output power, the operation cost of the laser is reduced to a certain extent, and the cost performance of the laser is improved.

The invention provides an automatic device and method for light emitting and power optimization of 2-micron solid laser. The automatic device comprises a laser pumping source, a plano-convex lens group, a gain medium, a confocal resonant cavity, an output coupling mirror, a five-degree-of-freedom electric displacement table and a regulation and control system. Automatic optimization and stable output of laser power are realized through the design of an asymmetric confocal resonant cavity and micron-order adjustment of a high-precision five-degree-of-freedom electric displacement table in combination with a tolerance optimization algorithm and a gradient descent spiral search algorithm. A thulium-doped CYA disordered crystal is adopted as a gain medium, and the angle of the thulium-doped CYA disordered crystal is adjustable so as to excite a high-order vortex The transmittance of the output coupling mirror is dynamically adjusted according to the working mode, and the intra-cavity power density and the light-to-light conversion efficiency are ensured. The invention has the advantages of high efficiency and stability, strong universality, low cost, diversified output and the like, is suitable for the fields of space communication, quantum optics, laser processing and the like, and obviously improves the performance and application range of the laser.

The invention belongs to the field of solar cell materials, and provides a compound A capable of being used as a light conversion agent, a light conversion adhesive film containing the compound A and a preparation method and application of the light conversion adhesive film. The compound A is used for the light conversion adhesive film, so that the light conversion efficiency of the light conversion adhesive film can be improved, and the absorption wavelength of the light conversion adhesive film can be regulated and controlled.

The invention provides aluminum paste overprinted on a BC battery silver grid line, a preparation method of the aluminum paste and the BC battery grid line, and belongs to the technical field of BC batteries. The aluminum paste comprises 65-90 parts by mass of aluminum powder; 2-10 parts by mass of glass powder; 2-5 parts by mass of an organic resin; 10-20 parts by mass of a solvent; 0-2 parts by mass of an additive; wherein the glass powder adopts bismuth-boron glass powder with the softening point of 400-500 DEG C. By adopting the bismuth-boron glass powder with low softening point temperature, silver-aluminum alloy is reduced during sintering at the medium-high temperature of 580-630 DEG C, the silver-aluminum lap resistance is reduced, the low composite level of the grid line is ensured, the electrical property of the grid line is improved, the replacement of silver paste by aluminum paste in a BC battery is realized while the light conversion efficiency is high, and the cost is reduced.

The invention provides a benzotriazole derivative and a resin composition containing the benzotriazole derivative. The benzotriazole derivative is of a 1H-site substitution type, and compared with a traditional 2H-site substitution type benzotriazole derivative light conversion material compound, the 1H-site substitution benzotriazole compound can remarkably improve the light conversion efficiency of a solar cell, especially the light conversion efficiency of the solar cell with a TOPCon photovoltaic module.

The invention provides a low-cost ytterbium-doped Yb calcium silicate niobium aluminum gallium laser crystal and a preparation method and application thereof. According to the invention, Al < 3 + > is introduced to replace 50% Ga < 3 + >, Yb < 3 + > ions are doped, and the Yb: Ca3NbAl < x > Ga < 3-x > Si2O14 laser crystal (0lt; xlt; and 3) the raw material cost is greatly reduced, the growth period is shortened, the laser performance of the crystal is improved, the absorption cross section and the emission cross section of the crystal are increased, the half-peak width of absorption and emission peaks is broadened, the oblique efficiency and the light conversion efficiency of continuous laser output are further improved, the laser threshold value is reduced, and watt-level continuous laser output is obtained.

The present invention belongs to the technical field of functional films, and particularly relates to a UV-protection PVB composite film, a preparation method therefor, and the use thereof. The UV-protection PVB composite film comprises an EVA / PVB composite film formed by an EVA film and a PVB film, wherein an ultraviolet light conversion layer is provided between the EVA film and the PVB film, the EVA film contains an ultraviolet light conversion agent, the PVB film contains an ultraviolet light absorber, and the ultraviolet light conversion layer is formed by coating with a transparent ultraviolet light conversion coating, and contains the ultraviolet light conversion agent, perhydropolysilazane, α-Al2O3 and a solvent. The ultrathin inorganic ultraviolet light conversion layer is designed which uses the perhydropolysilazane as a film-forming substance and the α-Al2O3 as a dispersion aid, and therefore exhibits excellent dispersibility, transparency and durability, thus reducing the use amount of light conversion agents, improving the light conversion efficiency, and solving the problem that light conversion agents added to EVA films are difficult to disperse and thus cannot achieve effective light conversion.

An ultraviolet-irradiation-resistant high-efficiency photovoltaic module belongs to the technical field of photovoltaic equipment, solves the technical problem of insufficient light conversion efficiency of photovoltaic modules, and adopts the technical scheme that two groups of photovoltaic modules are symmetrically arranged on the surfaces of the upper side and the lower side of a battery piece, and the two groups of photovoltaic modules and the battery piece are packaged into a whole; a nano-metal low-radiation film, a photovoltaic glass plate, a one-way light-transmitting film, a composite light conversion adhesive film (including a lower conversion adhesive film and an upper conversion adhesive film), an ultraviolet scattering film, an infrared shielding adhesive film and an ultraviolet cut-off film are sequentially arranged in each group of photovoltaic modules in an overlapping manner from the surface layer to the inner layer. The solar cell module not only can protect the cell from being irradiated by infrared rays and ultraviolet rays and prolong the service life of the cell, but also can prolong the propagation path of the ultraviolet rays and the infrared rays in the module, reduce light loss, prevent the light conversion efficiency from being reduced due to temperature rise and improve the power generation efficiency.

An eyewear display device implements a curved lightguide to form an intermediate image between an incoupler and an outcoupler. The curved lightguide produces an approximately 20-degree diagonal field of view (FOV) full-color display having approximately 10% red, blue, green efficiency with uniform color and luminance for a micro-display at a temple of an eyewear display device. The curved lightguide incorporates freeform mirror incouplers and / or outcouplers and color-corrected relay optics. Using an intermediate image stage in the optical pathway allows for use of a compact incoupler that does not exceed a thickness of the curved lightguide.

This invention discloses a method for enhancing and controlling the radiation of an LPP-EUV light source based on dual-pulse spatiotemporal co-constraint, belonging to the field of semiconductor manufacturing technology. This invention obtains a spatiotemporal reference by real-time monitoring of a liquid metal droplet, uses a pre-pulse laser to induce target material deformation into a fogged target cloud, and combines high-speed imaging and a hydrodynamic model to predict the time and coordinates of the target cloud's energy absorption peak. It dynamically adjusts the delay time and optical axis direction of the main pulse laser to achieve dual-pulse spatiotemporal co-constraint, and constructs a closed-loop control system through a recursive least squares algorithm with a dynamic forgetting factor. This invention effectively improves the extreme ultraviolet light conversion efficiency, controls the power fluctuation of the light source within ±0.5%, and extends the maintenance cycle of optical components by 2 times. It can be widely applied to next-generation high-power extreme ultraviolet lithography light source systems, meeting the application requirements of semiconductor miniaturization processes.

The invention discloses a photovoltaic power station irradiance component calculation method and device. According to the method, environmental parameters and multiple groups of historical operation data of a photovoltaic power station are obtained firstly, and then target historical operation data with corresponding slope clear sky irradiance and power actual value correlation meeting preset conditions are screened out according to the environmental parameters and the multiple groups of historical operation data. And finally, exhaustion of a light conversion efficiency prediction value is carried out based on the target power actual value and the target direct light conversion efficiency and the target scattered light conversion efficiency corresponding to the target timestamp, and when the residual error between the prediction power corresponding to the prediction value and the target power actual value is minimum, the target power actual value is obtained. And determining a clear sky irradiation direct component predicted value and a clear sky irradiation scattering component predicted value corresponding to the predicted light conversion efficiency as a clear sky irradiation direct component actual value and a clear sky irradiation scattering component actual value of the target timestamp. The difference between the conversion efficiency of the direct light and the conversion efficiency of the scattered light is fully considered, and the accuracy of irradiance component calculation is effectively improved.

A quantum-dot light conversion film, a preparation method and an application thereof and an anti-ultraviolet blue-free yellow light for chip manufacturing are provided. The preparation method includes: (1) mixing a quantum-dot concentrate with an acrylic monomer, then adding high polymer for secondary mixing, to obtain a polymer; (2) after mixing the polymer and nanoparticles, adding additives for dispersion to obtain a light conversion liquid resin; and (3) coating and curing the light conversion liquid resin to obtain a quantum-dot light conversion film. The light conversion film has high light conversion efficiency, adjustable emission peak position and narrow half peak width. Its surface forms a tightly arranged high refractive index microlens structure. When the light reaches the microlens array, as the light output surface is a lens structure and the refractive index is improved, more light is emitted in the positive direction, thereby effectively improving the light output rate.

The present application relates to a manufacturing method of an LED light-emitting device and an LED light-emitting device manufactured by this manufacturing method, and relates to the technical field of semiconductor packaging, including: providing a substrate and an LED chip. On the premise that the LED chip is mounted on the substrate, a first transparent encapsulant is coated along the substrate, and the first transparent encapsulant wraps the light-emitting surface of the LED chip; the first transparent encapsulant is baked for the first time to semi-cure the first transparent encapsulant; phosphor is sprayed onto the semi-cured first transparent encapsulant so that the particle density of the phosphor increases in the direction of the top surface away from the light-emitting surface of the LED chip. The present application has the effects of higher light-emitting efficiency, higher light conversion efficiency, and better light color performance of the LED chip.

This invention discloses a YAG-based composite laser ceramic and its preparation method. The composite laser ceramic has a five-layer structure from top to bottom: a microstructured concave YAG transparent ceramic, an Nd:YAG transparent ceramic, a YAG transparent ceramic I, a Ce,Nd:YAG transparent ceramic, and a YAG transparent ceramic II. The microstructured concave YAG transparent ceramic is used to reduce the temperature gradient and compensate for the thermal lensing effect; the Nd:YAG transparent ceramic is used to collect the energy emitted by the microstructured concave YAG transparent ceramic and to transfer the energy; the Ce,Nd:YAG transparent ceramic is used for laser energy transfer; and the YAG transparent ceramic I and YAG transparent ceramic II are used to reduce the ceramic thermal lensing effect. It is prepared using thermal bonding technology. The composite laser ceramic of this invention emits bright yellow light near 1064 nm when excited by a laser with a pump source of 808 nm. Furthermore, the composite laser ceramic has a light-to-light conversion efficiency of 19.85% and a laser threshold of 410 mW.

The application provides an omnidirectional following type reversing support, which comprises a supporting assembly, an adjusting assembly and a protection assembly, the supporting assembly is composed of a stand column, a transmission shaft is arranged on the top side wall of the stand column, a sleeve is movably sleeved on the surface of the transmission shaft, a linkage mechanism is arranged in the top end of the stand column, the adjusting assembly is composed of a horizontal plate and a photovoltaic panel, the photovoltaic panel is connected with the horizontal plate through a rotating frame, a rotating shaft is rotatably connected with the inside of the annular plate, the protection assembly is composed of a fixing base, a gear ring is arranged in the fixing base, and a connecting gear is fixedly connected to one end of a supporting plate. The application adopts a double-shaft adjusting mode to adjust the angle of the photovoltaic panel, realizes the omnidirectional following function to improve the light conversion efficiency as much as possible, and drives the adjacent reversing support, the sleeve is connected to realize the synchronous control of the angle of the same row of supports, realizes the synchronous control of multiple supports, the driving mechanism can drive the supporting plate to rotate and realize the support of the two sides of the photovoltaic panel, and the use strength of the reversing support is improved.

The invention provides an electronic device and a semiconductor chip thereof. The electronic device comprises a substrate, a circuit layer and a semiconductor chip. The circuit layer is disposed on the substrate. The semiconductor chip is disposed on the substrate and electrically connected to the circuit layer. The semiconductor chip comprises a semiconductor crystal grain, a filling layer, a first electrode, a second electrode and a reflecting layer. The semiconductor crystal grain comprises a first type semiconductor layer, an active layer and a second type semiconductor layer which are stacked in sequence. The fill layer surrounds the semiconductor die and includes a light conversion material. The first electrode is disposed on the first side of the semiconductor die and electrically connected to the first type semiconductor layer. The second electrode is disposed on the second side of the semiconductor die and electrically connected to the second type semiconductor layer. The second electrode includes a transparent conductive material. The electronic device and the semiconductor chip thereof can improve light conversion efficiency or can improve color purity.

The invention relates to the technical field of micro light-emitting diodes, and discloses a CMP quenching resistant multi-color micro light-emitting diode light-emitting structure and a preparation method, the CMP quenching resistant multi-color micro light-emitting diode light-emitting structure comprises a substrate, the substrate is provided with a basic light source pixel unit array and a transparent photoresist pattern layer, and the transparent photoresist pattern layer is arranged on the substrate. The transparent photoresist pattern layer is used for filling a gap area between adjacent basic light source pixel units, and is used for providing a flat supporting surface for subsequent chemical mechanical polishing (CMP) without bearing a shading function. According to the invention, the quantum dots are coated by the inorganic-organic shell layer, so that the influence of a CMP polishing solution and mechanical grinding can be isolated, the light conversion efficiency and stability of multi-color display are ensured, the transparent photoresist focuses on filling gaps and supporting CMP, and the thickness uniformity of the quantum dot filter layer is improved by optimizing the filling structure and thickness and avoiding the collapse of a film layer in the CMP process.

The plant growth lamp comprises a radiator, an LED lamp panel, a lens board and a driving power source used for driving the LED lamp panel, the radiator comprises a lamp panel mounting part and a power source mounting part, the LED lamp panel is mounted on the lamp panel mounting part, and the driving power source is mounted on the power source mounting part. An inner cavity is formed between the lamp panel mounting part and the power supply mounting part, and sawteeth are arranged in the inner cavity. According to the plant growth lamp, the inner cavity is formed between the lamp panel mounting part and the power source mounting part, the sawteeth are arranged in the inner cavity, the heat radiation area can be increased, the heat dissipation effect can be enhanced, and the plant growth lamp is more suitable for conventional planting; meanwhile, a circulating water pipeline is further included, circulating cooling water is added in the circulating water pipeline, the heat interaction rate is greatly increased, the light conversion efficiency is improved, meanwhile, the temperature of a lamp shell is extremely low, temperature rise of the planting environment is not affected, and leaves and stems of plants cannot be burnt.

The invention provides a vertical-structure Micro-LED chip and a preparation method thereof, and belongs to the technical field of semiconductor light-emitting devices. The vertical-structure Micro-LED chip comprises a conductive substrate, a metal bonding layer, an epitaxial structure, a quantum dot structure and a passivation layer, the conductive substrate, the metal bonding layer and the epitaxial structure are sequentially stacked, and the epitaxial structure comprises a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer which are sequentially stacked in the direction away from the metal bonding layer. The through hole penetrates through the first semiconductor layer, the multi-quantum well layer and the second semiconductor layer; the quantum dot structure is filled in the through hole and is in contact with the metal bonding layer; the passivation layer is arranged on the side wall of the through hole and located between the quantum dot structure and the epitaxial structure. The light transmission loss can be reduced, the light conversion efficiency is improved, and the heat dissipation performance and reliability of the chip are improved.

The invention provides a novel perovskite battery and a preparation method thereof, and the preparation method of the novel perovskite battery comprises the steps: A1, providing a substrate, preparing a first electrode group and a second electrode group on the upper surface of the substrate, and arranging first electrodes of the first electrode group and second electrodes of the second electrode group in a staggered manner; a2, preparing an electron transport layer and a hole transport layer, A3, preparing a perovskite layer on the upper surface of the substrate, and covering the electron transport layer and the hole transport layer with the perovskite layer; a4, etching downwards from the upper surface of the perovskite layer to the upper surface of the substrate to obtain a plurality of independent battery monomers; and A5, covering the upper surface of the perovskite layer with an insulating protection layer. The manufacturing process is simple, and the light conversion efficiency is effectively improved.

The present invention discloses a heterojunction agricultural light-conversion film, which belongs to the technical field of agricultural light-conversion films, and comprises the following steps: step one, weighing raw materials CsCl, MnCl2(H2O)4, and SbCl3 according to the stoichiometric ratio of each element, putting the weighed raw materials into an agate mortar, adding deionized water, mixing and grinding, and taking out the vacuum sealing package after completion; step two, using the heterojunction luminescent material obtained in step one and Ecoflex‑0030 silica gel to fully mix in proportion, pour into a special mold, bake in a drying oven, and demould to obtain a heterojunction agricultural light-conversion film. The present invention adopts a heterojunction agricultural light-conversion film of the above structure, and the obtained light-conversion film can effectively utilize solar energy, can improve light conversion efficiency and is harmless to the environment. At the same time, due to the formation of the heterojunction, the red-orange light emission intensity of the material is improved, which promotes plant growth and development and organic matter accumulation.

The present invention discloses the preparation of a carbon quantum dot grafted polymer material and its application in photovoltaic adhesive films. By grafting a polymer material onto the surface of carbon quantum dots, the present invention more effectively disperses the carbon quantum dots evenly than other methods, improves quantum yield, and exhibits excellent and stable fluorescence properties, emitting bright blue light when excited by ultraviolet light. The material is added to photovoltaic adhesive films as a light conversion agent, absorbing ultraviolet light to protect solar cells and releasing visible light for absorption by solar cells, thereby improving their efficiency. The carbon quantum dot grafted polymer material of the present invention exhibits significant advantages in terms of light conversion efficiency, light stability, and processing performance.

The present invention relates to a coating composition for forming a UV light conversion coating for a photovoltaic cell, a UV light conversion coating prepared therefrom, a method for preparing the UV light conversion coating, and a photovoltaic cell and a photovoltaic module including the coating. The composition includes, by mass: (A) 100 parts of a polyurea precursor resin which is a mixture of a specific aspartate compound and a blocked isocyanate curing agent; (B) 0.5 to 5 parts of a UV light conversion agent; (C) 1 to 5 parts of an adhesion promoter; (D) 10 to 100 parts of an inert diluent. The light conversion coating prepared from the coating composition, when used in a photovoltaic cell or a photovoltaic module, can reduce UV band light transmittance and increase visible light wavelength transmittance, improve light conversion efficiency, and have excellent adhesion and aging resistance.

The invention belongs to the technical field of laser, and particularly discloses a low-quantum-loss laser chip and laser, and the laser chip comprises a substrate, a dual-wavelength high-reflectivity mirror, a gain region, an anti-diffusion layer and a cap layer which are sequentially arranged. The dual-wavelength high-reflectivity mirror comprises a plurality of reflection groups which are arranged in sequence, each reflection group comprises a high-refractive-index layer and a low-refractive-index layer, and the high-refractive-index layers and the low-refractive-index layers are arranged alternately; the optical thickness d light of the high refractive index layer and the low refractive index layer is equal to (lambda pump + lambda laser) / 8; the gain region comprises a plurality of gain groups which are sequentially arranged, each gain group comprises a high barrier layer and a low barrier layer, and the high barrier layers and the low barrier layers are alternately arranged. The low-potential barrier layer is directly pumped, and the required pumping photon energy is close to the laser photon energy, so that the quantum loss in the laser generation process is small, the waste heat in the chip is less, the heat effect of the laser is greatly reduced, the light-light conversion efficiency is high, and the overall output power of the laser is also greatly improved.

The invention discloses a perovskite solar cell module and a preparation method and application thereof. At a high light transmittance (gt; 40%), a large area (gt; in the preparation of a perovskite solar cell module (PSM) with high light transmittance and high light conversion efficiency, a uniform and compact semitransparent perovskite thin film is successfully obtained through a film coating preparation step of adding a DMPU layer before a perovskite thin film layer is prepared, so that the PSM with high light transmittance and high light conversion efficiency is prepared.

The present invention discloses a high-power Faraday laser based on spatial beam combining and its implementation method, comprising a high-power semiconductor laser diode array for generating multiple laser beams; a fast-axis collimating lens array for collimating the fast axis of each laser beam; a slow-axis collimating lens array for collimating the slow axis of each laser beam; a reflector array for spatially combining the multiple laser beams after both the fast and slow axes have been collimated, and then incident on a beam expanding lens assembly; a beam expanding lens assembly for expanding the incident light beam, and then incident on a Faraday atomic filter through a half-wave plate; a Faraday atomic filter for performing frequency-selective polarization rotation on the incident light, and then reflecting it through a second polarization beam splitter prism to a total reflection mirror, and then returning it to the high-power semiconductor laser diode array through the total reflection mirror to achieve external cavity feedback; and light with a frequency outside the transmission peak is transmitted through the second polarization beam splitter prism as the second output of the laser. The present invention significantly improves the light-to-light conversion efficiency.

The present invention discloses a Mn-based metal halide fluorescent solar concentrator device and its preparation method. The method first involves mixing benzyltrimethylammonium bromide, MnBr2, and water in an air atmosphere, stirring to clarify, and then filtering. PEO is then added and thoroughly stirred to dissolve to form a precursor solution. Finally, the precursor solution is applied by blade coating followed by spin coating to form a light-absorbing layer. The thickness of the light-absorbing layer is controlled by regulating the spin coating rate. By selecting the appropriate PEO additive, using a hybrid Mn-based metal halide as a precursor, and employing a solution method of blade coating followed by spin coating, the present invention achieves the preparation of a photovoltaic concentrator with high transparency, high light conversion efficiency, and high edge emission efficiency, without the need for organic solvents or external processing.

The present invention provides a pulsed electric field measurement system and a temperature compensation method thereof, aiming to address the technical problem that the electro-optical conversion efficiency of a laser varies with temperature, affecting the stability of the pulsed electric field measurement system. The pulsed electric field measurement system includes a pulsed electric field measurement circuit, which includes a monopole antenna, a high-impedance input operational amplifier, a semiconductor laser, and a power supply module. The monopole antenna is sequentially connected to the high-impedance input operational amplifier and the semiconductor laser; the high-impedance input operational amplifier includes a grounding resistor and a feedback resistor, both of which are negative temperature coefficient thermistors; the monopole antenna couples to a spatial electric field; the high-impedance input operational amplifier is used to convert the high-impedance signal into a low-impedance signal and input it into the semiconductor laser; and the power supply module provides power to the entire pulsed electric field measurement circuit. The present invention also provides a temperature compensation method for the pulsed electric field measurement system.