The invention relates to the technical field of
semiconductor display devices, in particular to an anti-
crosstalk light-emitting unit and a manufacturing method thereof, and a color filter layer, a color conversion layer, an
inorganic layer, a
chip bonding layer, a micro light-emitting
diode layer and a reflecting layer are sequentially manufactured on a substrate from bottom to top; manufacturing a discontinuous filling layer on the surface of the reflecting layer; and
grinding,
thinning,
cutting and splitting the substrate to form an independent discrete device. By arranging the reflecting layer covering the packaging structure and the discontinuous
chip bonding layer, light emitted by the
quantum dots and the micro light-emitting diodes is reflected by the reflecting layer, light
crosstalk between the display units is avoided, the reflected light excites the
quantum dots again to emit light, and the light efficiency is improved. The
chip bonding layer and the filling and leveling layer are arranged discontinuously, so that substrate warping caused by temperature rise and fall during large-size manufacturing is avoided. When
cutting and splitting are carried out, the
laser technology frequency can be reduced, the
mass production efficiency can be improved, and the
organic layer is removed, so that the occurrence of the double-
cell problem of the chip can be greatly avoided.