28515results about "Semiconductor/solid-state device testing/measurement" patented technology

A cutting instrument including a metal blade has a recess formed therein and a semiconductor substrate affixed to the blade in the recess. The semiconductor substrate includes at least one sensor formed thereon. The sensor formed on the semiconductor substrate may comprise at least one or an array of a strain sensors, pressure sensors, nerve sensors, temperature sensors, density sensors, accelerometers, and gyroscopes. The cutting instrument may also further include a handle wherein the blade is affixed to the handle and the semiconductor substrate is electrically coupled to the handle. The handle may then be coupled, either physically or by wireless transmission, to a computer that is adapted to display information to a person using the cutting instrument based on signals generated by one or more of the sensors formed on the semiconductor substrate. The computer or handle may also be adapted to store data based on the signals generated by one or more of the sensors. A method of making said cutting instrument includes the steps of at least one sensor being formed on a semiconductor wafer and a layer of photoresist being applied on a top side of the semiconductor wafer according to a pattern that matches the defined shape of the semiconductor substrate. The portion of the semiconductor wafer not covered by the photoresist is removed and thereafter the photoresist is removed from the semiconductor wafer, thereby leaving the semiconductor substrate having a defined shape and at least one sensor formed thereon. The semiconductor substrate having a defined shape and at least one sensor formed thereon is then affixed to a metal blade in a recess formed in said blade.

A substrate support structure comprising a first surface and a second surface opposite the first surface. The substrate support structure also comprises a plurality of proximity pins projecting to a first height above the first surface, the first height being less than 100 μm. In addition, the substrate support structure further comprises a plurality of purge ports passing from the second surface to the first surface and a plurality of vacuum ports passing from the second surface to the first surface. In one embodiment, the plurality of purge ports are arranged in a first circular pattern, the first circular pattern having a first radial dimension less than the radius of the substrate support, and the plurality of vacuum ports are arranged in a second circular pattern, the second circular pattern having a second radial dimension less than the first radial dimension.

A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.

A method for managing UV irradiation for curing a semiconductor substrate, includes: passing UV light through a transmission glass window provided in a chamber for curing a semiconductor substrate placed in the chamber; monitoring an illuminance upstream of the transmission glass window and an illuminance downstream of the transmission glass window; determining a timing and/or duration of cleaning of the transmission glass window, a timing of replacing the transmission glass window, a timing of replacing a UV lamp, and/or an output of the UV light based on the monitored illuminances.

A vacuum assembly used for warming processed substrates above the dew point to prevent unwanted moisture on the processed substrate surfaces as well as reducing negative impact on manufacturing throughput. The vacuum assembly includes a processing chamber, a substrate handling robot, and a heater which may be an optical heater. The processing chamber is configured to cryogenically process one or more substrates. The transfer chamber is connected to the processing chamber and houses the substrate handling robot. The substrate handling robot is configured to displace one or more substrates from the processing chamber to the transfer chamber. The heater is connected to the transfer chamber above the substrate handling robot such that the heater emits energy incident on the substrate when the substrate handling robot displaces the substrate in the transfer chamber.

In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.

A system for condition monitoring and fault diagnosis includes a data collection function that acquires time histories of selected variables for one or more of the components, a pre-processing function that calculates specified characteristics of the time histories, an analysis function for evaluating the characteristics to produce one or more hypotheses of a condition of the one or more components, and a reasoning function for determining the condition of the one or more components from the one or more hypotheses.

The present invention is a new target, and associated apparatus and methods, for determining offset between adjacent layers of a semiconductor device. The target disclosed here includes a first periodic structure to be placed on a first layer of the device and a second periodic structure, that complements the first periodic structure, placed on a second layer of the device at a location that is adjacent the first periodic structure when the second layer is placed on the first layer. Any offset that may occur is detected by the present invention either optically, micro-mechanically or with electron beams using any of various methods and system embodiments.

An apparatus for processing a substrate. The apparatus comprising a tubular member with a first end and a second end. The first end comprising an opening; and a temperature sensor disposed in the opening. The temperature sensor comprising a resilient member. The resilient member comprising a surface made of a ceramic material wherein the surface made of a ceramic material extends through the opening to provide a substrate contact surface.

Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

A FOUP opening/closing device includes a housing containing a mounting table for mounting the FOUP thereon, an FOUP loading opening, and a delivery opening. The device further includes a rotator for rotating the mounting table, a door opening/closing unit to open or close the door of the FOUP and keep the door open, a mover for moving the FOUP and the door opening/closing unit in a reciprocating manner, to allow the FOUP and the door opening/closing unit to be connected to or separated from each other, and a controller to output control signals for moving the FOUP and the door opening/closing unit via operation of the mover to mount the door of the FOUP to the door opening/closing unit, separating the door from the FOUP, moving the FOUP and the door opening/closing unit away from each other, and rotating the mounting table to make the FOUP face the delivery opening.

A new method to determine a parameter of a damascene interconnect in an integrated circuit device is achieved. Drawn dimensions and local pattern density of a damascene interconnect are extracted in an integrated circuit device. A parameter of the damascene interconnect is calculating using the drawn dimensions and the local pattern density to select a per unit value from a set of per unit values measured over a range of drawn dimension and pattern density combinations. The method may be used to improve the accuracy of extracted damascene metal line resistance and parasitic capacitance.

A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.

A temperature sensor (10) includes: a temperature-sensing portion for measuring a temperature of an object (50) by contacting the object; and a supporting portion for supporting the temperature-sensing portion from a side opposite to a contact surface, the supporting portion having a space at a portion partially corresponding to the temperature-sensing portion. A temperature controller includes: a temperature control device; the temperature sensor (10) for measuring the temperature by contacting the object (50); and a controller for controlling the temperature control device. The controller includes: a mounting-state judging means for judging a mounting-state of the object (50); a switching means for switching a control gain and a target temperature of the temperature control device based on the judging result; and a control-command generating means for generating a control command based on the control gain, the target temperature and a measurement value of the temperature sensor (10).