108 results about "Hot filament" patented technology

The invention discloses a poly-Si film preparation method based on a vertical double-layer hot wire array thermal field design, which changes the surface temperature of a hot wire and the range of a cracking high-temperature region by adjusting the interlayer spacing of a double-layer hot wire array and the current of the double-layer hot wire, expands the cracking time and the cracking space of silane, promotes secondary cracking of the silane, and improves the yield of the poly-Si film. Components and concentration distribution of a silane cracking intermediate product reaching the surface of the substrate can be effectively controlled, and the ratio of SiH / SiH2 active groups is increased; and depositing the poly-Si thin film under the vacuum of 0.5 Pa-5. 0Pa, the substrate temperature of 200-560 DEG C and the deposition time of 10-60 minutes, after deposition is finished, raising the substrate temperature to 200-650 DEG C, and carrying out vacuum annealing on the grown poly-Si thin film to obtain the high-crystallization-rate poly-Si thin film. According to the method, the poly-Si thin film is grown by using a vertical double-layer hot wire array thermal field design, a high-temperature hot wire silane cracking technology and a vacuum annealing technology, and the crystallization quality of the poly-Si thin film can be obviously improved.

The invention relates to a method for preparing a low-temperature silicon nitride film, which adopts a hot filament chemical vapor deposition technology and comprises the following steps of: placing a substrate on a support plate and feeding the support plate into a vacuum reaction chamber; introducing required process gas into the vacuum reaction chamber, wherein the process gas comprises any one or both of ammonia gas and nitrogen gas, hydrogen gas and silane; and dynamically adjusting the temperature of the hot filament, and depositing on the substrate to obtain the required silicon nitride film. In addition, the invention also relates to equipment for preparing the low-temperature silicon nitride film by adopting the method for preparing the low-temperature silicon nitride film. The hot filament chemical vapor deposition technology is adopted, the compact silicon nitride thin film can be prepared when the temperature of the substrate is higher than the room temperature, the application field of equipment is greatly widened, the silicon nitride thin film deposited under the condition that the temperature of the substrate is kept low can be produced under the proper air pressure, and the production efficiency is improved. And manufacturing of HBC cells and perovskite cells in the photovoltaic field is facilitated.

The invention discloses an ion source current control device and system, and relates to the field of circuits, the ion source current control device comprises a sampling circuit, a control circuit and a power supply circuit, the control circuit is connected with the sampling circuit, the ion source current of a neutron tube can be detected in real time, and power supply of a hot wire is controlled in real time by adopting a hardware circuit feedback mode. The current stability of the ion source is rapidly maintained, the calculation delay of a software mode is eliminated, and the control circuit can realize the adjustment of the duty ratio of the output pulse signal through the difference value between the first voltage value and the second voltage value, so as to realize the accurate control of the neutron tube hot wire power supply process. The whole control process is realized through a hardware circuit, the response speed is high, the output is stable, the stability of the output ion source current is ensured, the situations such as jitter are avoided, the application range of the neutron source is expanded, and wide popularization of the neutron source is facilitated.

The invention discloses a BDD electrode material and a preparation method thereof. The preparation method comprises the following core steps: pretreating the surface of a porous titanium substrate; depositing a nanoscale TiN film layer on the surface of the pretreated porous titanium substrate in advance; depositing a layer of single-walled carbon nanotube network on the TiN thin film layer by using an electrophoretic deposition method; growing a highly-doped BDD layer on the single-walled carbon nanotube network by adopting a plasma enhanced chemical vapor deposition technology; repeating the two steps to form a multi-layer SWCNT / BDD composite structure, and controlling the thickness of the multi-layer SWCNT / BDD composite structure to be 1-50 microns; and finally, depositing a low-doped BDD active layer with the thickness of 1-5 microns by adopting a hot filament chemical vapor deposition (HFCVD) technology. According to the pulse laser assisted preparation process provided by the invention, the femtosecond laser pulse is introduced to replace traditional plasma treatment, so that the process flow is simplified, and the efficiency is improved; according to the technology, the process is simplified, the quality of the TiN film is improved through accurate energy input, and a new way is opened up for further improving the performance of the BDD electrode.

The invention relates to a method for depositing a high-quality silicon nitride film, which adopts a hot filament chemical vapor deposition technology and comprises the following steps of: preheating a hot filament arranged in a process cavity by adopting small current; the preheated hot wire is heated through large current, ammonia gas is introduced into the process cavity, and the pressure of the process cavity is controlled for reaction; heating the hot wire by adopting large current, introducing ammonia gas, introducing silane into the process cavity, and controlling the pressure of the process cavity for reaction; continuously keeping heating of the hot wire by adopting large current, continuously keeping introduction of ammonia gas, and not controlling the pressure of the process cavity; and cooling the hot wire heated by adopting the large current until the hot wire is heated and buffered by adopting the small current. In addition, the invention also relates to a HoFCVD system. The problem that silane is decomposed prior to ammonia gas is effectively solved, and the quality of the silicon nitride film is improved. The problems that the amorphous silicon film layer is damaged due to the fact that the temperature of the coating substrate of the PECVD equipment is too high and the productivity is insufficient due to the fact that the coating speed of the ALD equipment is low can also be perfectly solved.

The invention relates to a method for passivating the cutting edge of a solar cell, which is used for forming a passive film layer by using hot filament chemical vapor deposition and comprises the following steps of: exposing the cutting edge of the cell and directly facing a hot filament; current is introduced into the hot wire for heating, and H2 is introduced for hydrogen etching; heating is kept, SiH4 is introduced under the first pressure, SiH4 and H2 are introduced while the first pressure is kept, and an a-Si: H film layer is obtained; heating is kept, SiH4 and NH3 are introduced at the same time under the second pressure, a SiNx: H film layer is obtained through deposition on the a-Si: H film layer, and a passivation composite film layer of the cutting edge is formed, or SiH4, NH3, H2 and O2 are introduced at the same time under the second pressure, a SiNxOy: H film layer is obtained through deposition on the a-Si: H film layer, and a passivation composite film layer of the cutting edge is formed. The invention provides a film layer which is low in defect state density, high in passivation performance, excellent in weather resistance, high in optical transmittance and excellent in comprehensive performance, and a film coating technology which is simple in process, high in cost performance and capable of being applied on a large scale.

The utility model belongs to the technical field of coating, and particularly relates to a horizontal type hot wire CVD (chemical vapor deposition) coating device, which comprises a coating chamber, a plurality of heating wires, a plurality of heating wires and a plurality of heating wires, the heating wires are arranged in the coating chamber, and the heating wires comprise a transverse heating wire and a longitudinal heating wire; wherein the transverse hot wires and the longitudinal hot wires are arranged in a laminated manner, and the projections of the transverse hot wires and the longitudinal hot wires on the heating plate are crossed; the horizontal hot filament CVD coating device comprises a coating chamber, a heating plate is arranged on the top surface of the coating chamber, a gas uniformizing chamber is formed between the heating plate and the top surface of the coating chamber, and a plurality of gas uniformizing holes are formed in the heating plate, so that the introduced process gas is more uniform by arranging the gas uniformizing chamber, and meanwhile, the process gas in the gas uniformizing chamber is preheated by arranging the heating plate; and finally, the laminated and crossed hot wire assemblies are arranged, so that a temperature field formed by the hot wire assemblies is more uniform, and the process gas is prevented from crystallizing and dropping slag in the chamber.

The application discloses a gradient diamond / molybdenum disulfide composite self-lubricating wear-reducing engineering ceramic coating and a preparation method thereof, belongs to the technical field of full ceramic self-lubricating wear-resistant coatings, and the coating is sequentially formed of a multi-stage size progressive diamond coating and a molybdenum disulfide coating from the surface of an engineering ceramic substrate to the outside. The multi-stage size progressive diamond coating comprises a micron diamond coating, a fine-grained diamond coating and a nano diamond coating, and the molybdenum disulfide coating is deposited on the diamond coating. The diamond coating is prepared by using a hot-wire chemical vapor deposition method, and the molybdenum disulfide film covering the diamond coating is prepared by using a direct-current magnetron sputtering method. Under certain conditions, the molybdenum disulfide in the composite coating reacts with the nano diamond and is converted into onion-like carbon, so that the hardness and lubricating performance of the composite coating are improved, and the friction and wear are reduced. The composite coating prepared by using the method has more stable bonding force and adhesion, and the service life of a machine is improved.

The present application relates to a kind of anti-winding plating and anti-pollution's coating carrier plate structure, which is arranged in the process cavity of hot wire chemical vapor deposition, comprising: conveying carrier plate, silicon wafer is installed on it;Spacing plate is positioned between hot wire and conveying carrier plate, one side of spacing plate is towards hot wire, and the other side is towards the side of conveying carrier plate carrying silicon wafer;Wherein, first spacing is provided between spacing plate and conveying carrier plate, and second spacing is provided between spacing plate and hot wire.In addition, the present application also relates to a kind of coating method using the above-mentioned coating carrier plate structure and battery piece coated by the coating method.The present application can avoid winding plating and pollution problem when depositing thin film, and can directly prepare high-quality doped crystalline silicon layer without winding plating and pollution.

A coated tool, such as a rotating, cutting tool, includes a tool body and a multilayer wear protection coating system. The wear protection system coats a functional surface of the tool body that is subject to wear and includes a first undoped diamond layer and a second undoped diamond layer disposed over the first undoped diamond layer. The first undoped diamond layer is electrically conductive and exhibits grain boundary conductivity from delocalized electrons. The second undoped diamond layer is electrically insulating. The first undoped diamond layer is 4-20 microns thick and is made with diamond grains whose size ranges from 4-10 nm. The first and second diamond layers are applied by chemical vapor deposition (CVD) using a hot-wire method. The wear protection system also includes an additional undoped diamond layer that is electrically insulating and is disposed between the functional surface of the tool body and the first diamond layer.

The utility model provides a novel CVD diamond vertical layout hot wire device which comprises two upper electrodes and a lower electrode, the two upper electrodes are vertically arranged in parallel, an upper electrode plate is arranged between the two upper electrodes, the upper electrode plate can slide along the upper electrodes, a lower electrode plate is arranged below the upper electrode plate, and the lower electrode plate can slide along the lower electrode plate. Upper electrodes are arranged at the bottom of the upper electrode plate, lower electrodes are arranged at the bottom of the lower electrode plate, a cross rod is connected between the tops of the two upper electrodes, a plurality of high-temperature springs are connected below the cross rod, a plurality of hooks are arranged on the top surface of the upper electrode plate, and the number of the hooks is consistent with that of the high-temperature springs. According to the novel CVD diamond vertical layout hot wire device, the upper electrode plate capable of moving up and down is arranged, the requirements of hot wires with different lengths can be met, the inner section of the upper electrode plate is approximately small, and when the upper electrode plate works and emits heat, the protruding part of the sliding block can be clamped, so that the upper electrode plate is more stable.

The invention discloses a low-pressure reaction cavity gas inlet device, a deposition reaction cavity and a uniform gas supply method, and relates to the technical field of low-pressure hot filament chemical vapor deposition reaction equipment, and the gas inlet device is provided with a first area distribution cavity and a second area flow equalizing cavity which are connected in series from top to bottom to form a double-cavity sequential pressure stabilizing structure. A top plate of the first area distribution cavity is provided with an air inlet, a diffusion cap with an open upper end and a closed lower end is inserted into the air inlet, and diffusion holes are formed in the circumferential surface of the diffusion cap; and the lower plate of the first area distribution cavity is a flow limiting piece provided with a hole array. The flow dispersing cap cooperates with the flow limiting piece, concentrated inlet air is dispersed and dispersed in the first area, and leading pressure drop is established. And the gas enters the second-area flow equalizing cavity for pressure equalization, and is finally sprayed downwards through the uniform gas outlet surface at the bottom. By constructing a diffusion, pressure stabilization and pressure equalization cascade structure, a distribution mechanism dominated by pressure drop in the device is realized, upstream and downstream process fluctuation is isolated, and uniformity, stability and high repeatability of air flow supplied to a reaction cavity base station area are ensured.

The present invention relates to a method for preparing an oxygen-doped microcrystalline silicon thin film, comprising: texturing a silicon wafer substrate to obtain a double-sided texturized silicon wafer; depositing intrinsic silicon layers on both sides of the texturized silicon wafer to obtain a first structure; placing the first structure in a hot wire chemical vapor deposition device and introducing H2 to hydrogen etch the surface of the silicon wafer; then controlling the pressure in the reaction chamber of the hot wire chemical vapor deposition device while introducing SiH4 and H2 to deposit a seeding layer on the intrinsic silicon layer on the light-facing side of the texturized silicon wafer to obtain a second structure; and simultaneously introducing SiH4, H2, N2O, and PH3 into the reaction chamber to deposit an oxygen-doped microcrystalline silicon layer on the seeding layer of the second structure. Furthermore, the present invention also relates to an apparatus for preparing an oxygen-doped microcrystalline silicon thin film using the above method. The present invention can form an oxygen-doped microcrystalline thin film on the light-facing side of, for example, a heterojunction cell using a HoFCVD device, thereby solving the problem of parasitic absorption on the light-facing side.

The invention relates to the technical field of solar cells, in particular to a boron diffusion method, a solar cell, a preparation method of the solar cell and a photovoltaic module. The invention aims to solve the problem that the photoelectric conversion efficiency of a solar cell is affected due to poor sheet resistance consistency caused by poor diffusion uniformity of the existing boron diffusion method. In order to achieve the purpose, the boron diffusion method comprises the steps that a boron-doped amorphous silicon source layer with the thickness being 3-5 nm is prepared on one face of a silicon wafer through a hot filament chemical vapor deposition method, and oxygen-free boron diffusion treatment is conducted on the silicon wafer deposited with the boron-doped amorphous silicon source layer. And the uniform diffusion of the boron element is facilitated, so that the consistency of resistance after boron diffusion is improved, and the photoelectric conversion efficiency of the solar cell is further improved.

A method of manufacturing a diamond watch crystal wherein the present invention employs multiple techniques to produce the final product. The method of the present invention initiates with a chemical vapor deposition process wherein a high purity graphite is employed as the source substrate. This step further deploys utilization of gases, temperature and an energy source to facilitate formation of a diamond layer on the substrate. The present invention provides alternate energy sources during the chemical vapor deposition such as but not limited to, microwave plasma, direct current plasma, inductively-coupled plasma and hot filament techniques. The method of the present invention further deploys a high pressure high temperature step subsequent the chemical vapor deposition step. These two steps are repeated wherein the initial latter step includes a diamond seed. A final high pressure high temperature step is utilized to remove impurities prior to cutting and polishing.

The invention relates to the technical field of diamond film preparation, in particular to an assembly and device for preparing a diamond film on the surface of a full-ceramic bearing ring, and the assembly comprises a heating component which comprises a plurality of hot wires arranged at equal intervals with the surface of the bearing ring; the rotating component is used for driving the bearing ring to rotate; the base is used for mounting the heating component and the rotating component; the cover body is buckled on the base, and a reaction chamber is defined by the base and the cover body; the heating component and the rotating component are arranged in the reaction chamber; an air inlet and an air outlet are further formed in the cover body, and the air inlet is used for being connected with an external air supply device; the device comprises the chemical vapor deposition assembly, a gas supply device, a motor, a power supply system and a cooling water channel. The hot wires and the surface of the bearing ring are arranged at equal intervals, and the bearing ring is driven to rotate at a constant speed through the rotating component, so that all surface areas are subjected to the same thermal radiation and gas decomposition environment, and the deposition efficiency and the film layer quality are improved.

The invention discloses a method for preparing a lubricating protective coating on the surface of a silicon carbide substrate, and belongs to the technical field of composite coating preparation, and the method comprises the following steps: (1) carrying out cleaning and drying pretreatment on the silicon carbide substrate, or sequentially carrying out cleaning and drying pretreatment and surface texturing treatment on the silicon carbide substrate; (2) carrying out surface roughening treatment on the silicon carbide substrate treated in the step (1), then putting the silicon carbide substrate into suspension containing nano-diamond, carrying out ultrasonic oscillation and crystal planting, taking out the silicon carbide substrate, drying the silicon carbide substrate, and preparing a diamond coating by utilizing hot filament chemical vapor deposition; and (3) taking boron nitride as a raw material, and compounding the boron nitride and the diamond coating on the silicon carbide substrate treated in the step (2) by utilizing a spin-coating method or a magnetron sputtering method to obtain the lubricating protective coating. According to the method, the diamond / boron nitride composite coating is used for achieving surface lubricating protection of the silicon carbide substrate, implementation is easy, and the lubricating effect is good.

The invention discloses a method for preparing large-area diamond at high temperature by an HFCVD (High Frequency Chemical Vapor Deposition) method. The method comprises the following steps: producing the diamond through a hot filament chemical vapor deposition device; the diameter of the produced diamond is more than or equal to 200mm; the hot filament chemical vapor deposition device is provided with a deposition space, and a hot filament assembly, a deposition base station and a temperature compensation device are arranged in the deposition space. The hot wire assembly comprises a plurality of hot wires which are arranged in parallel; the deposition base station comprises a substrate and a cooling interlayer mechanism; the substrate is placed on the upper surface of the cooling interlayer; the temperature compensation device comprises a substrate compensation device; the hot wire distance D between the parallel hot wires is adjusted, and D is 4-12 mm; adjusting a substrate distance H between the hot filament plane and the substrate through a first formula according to the hot filament distance D; after cooling is completed, hydrogen in the furnace is discharged, the diamond film layer is taken down from the surface of the deposition base body, and diamond is obtained; and the diamond with large area, high quality and few impurities and defects is prepared.

The application discloses a kind of based on multi-zone coordinated thermal field regulation and control large-size BDD electrode integrated preparation device and method, belong to CVD equipment technical field.The device includes reaction chamber, liftable base, multi-zone independent controllable hot wire system, composite temperature monitoring system and intelligent control system.It is in that hot wire system is divided into multiple independent temperature control subareas, and temperature measurement mode combining contact and non-contact is used, and the temperature of multiple regions on substrate surface is obtained in real time by control system, each subarea hot wire power is dynamically and independently adjusted by closed-loop control, accurate, active coordinated regulation and control of surface temperature field of large-size substrate is realized, and "edge effect" is effectively inhibited.The method can automatically prepare large-size BDD electrode, and the electrode has excellent in-plane uniformity in film thickness, doping concentration and oxygen evolution potential and other key performances.The application solves the problem of uniform preparation of large-size high-performance BDD electrode, and provides a reliable technical foundation for industrial mass production.

The invention relates to the technical field of preparation of silicon carbide coatings, in particular to a method for preparing a silicon carbide coating on a hard alloy substrate. The method comprises the following steps that firstly, a hard alloy substrate is pretreated, then the pretreated substrate is placed on a clamp in hot filament chemical vapor deposition equipment, then tetramethylsilane and hydrogen are introduced into a reaction cavity, precursor cracking is excited through a hot filament, and the hard alloy substrate is obtained. The compact and uniform silicon carbide coating is obtained on the surface of the hard alloy substrate, and meanwhile the hard alloy substrate with more excellent performance is provided. According to the method, the applicable substrate of the preparation technology of the silicon carbide coating is widened, the application range of the silicon carbide coating is expanded, and the silicon carbide coating prepared on the hard alloy substrate has high purity, good crystal quality and excellent film-substrate adhesion strength; and the wear resistance and the service life of the cutter can be obviously improved when applied to the surface of the hard alloy cutter.

A specific embodiment of the present invention provides a hydrophilic coating, a preparation method and a device. The hydrophilic coating is formed by hot wire chemical vapor deposition of silicone monomers on the surface of a substrate in an atmosphere with oxygen. The hydrophilic coating has excellent hydrophilic properties, a water contact angle of less than 10°, and excellent hydrophilic retention in a high humidity environment.

The invention relates to a method for producing a transparent, scratch-resistant component, comprising the following steps: providing a substrate wafer made of glass, in particular quartz glass, which is transparent to visible light, having a metal film on the top side; growing a diamond layer on the top side of the substrate wafer by chemical vapor deposition, in particular by means of a microwave plasma chemical vapor deposition (MPCVD) process or a hot filament CVD (HFCVD) process.

The present invention discloses a hot wire system and a horizontal HWCVD device. The hot wire system is used in the horizontal HWCVD device, wherein the horizontal HWCVD device has a coating chamber, a substrate carrier for placing a substrate is disposed in the coating chamber, the substrate carrier is horizontally supported and runs along a first direction, the hot wire system is disposed in the upper part in the vertical direction of the coating chamber and extends along the first direction and a second direction orthogonal to the first direction, the hot wire system includes a plurality of hot wire feeding units, and the plurality of hot wire feeding units are respectively disposed along the first direction and the second direction. The hot wire system of the present invention can maintain the stability of the coating process and improve the stability of system use.

The utility model relates to the technical field of photovoltaics and semiconductors, in particular to a hot wire tensioning device and chemical vapor deposition equipment, and solves the problem that a hot wire deforms and falls in a high-temperature state. The hot wire tensioning device comprises a supporting assembly, at least one butt joint assembly and at least two tensioning assemblies. The butt joint assembly is connected with the supporting assembly in an insulating mode, and the butt joint assembly is electrically connected with the first ends of the two hot wires. The at least two tensioning assemblies are located on the two sides of the butt joint assembly respectively and are in insulated connection with the supporting assembly. The tensioning assembly is electrically connected with the second end of the hot wire and generates pulling force on the hot wire in the extending direction of the hot wire through the elastic restoring force of the tensioning assembly, so that the hot wire is in a tensioned state. The two heating wires are electrically connected with the positive electrode and the negative electrode of a power source respectively. Due to the fact that the long hot wire is divided into the two short hot wires, the two short hot wires are tensioned respectively, and the problem that the hot wire is still deformed and falls due to the fact that the tension of the tensioning assembly is insufficient due to the fact that the hot wire is too long is solved.

The utility model belongs to the technical field of production and manufacturing of solar cells, and particularly relates to a horizontal hot filament CVD (chemical vapor deposition) process cavity and a vacuumizing device. The lower end face of the process cavity is connected with the vacuum pipe. The pyrolysis mechanism is arranged in the upper cover and is suitable for pyrolyzing the process gas guided into the upper cover so as to perform film coating on the silicon wafer arranged in the process cavity; the vacuumizing device comprises a pump stacking mechanism which is arranged on one side of the process cavity; wherein two ends of the vacuum tube are respectively connected with the pump stacking mechanism and the process cavity; wherein the pump stacking mechanism is suitable for extracting gas in the process cavity by using the vacuum pipe after being started, so that vacuum is formed in the process cavity.

This invention provides a hot-wire coating equipment, belonging to the technical field of photovoltaic cell coating. The hot-wire coating equipment includes a deposition chamber, a first fixing component, a second fixing component, and a claw plate assembly. The first fixing component is fixedly disposed on the inner wall of the deposition chamber. The second fixing component is disposed within the deposition chamber and detachably connected to the first fixing component; the second fixing component is used to fix the hot wire. The claw plate assembly is disposed within the deposition chamber and is used to grasp the second fixing component and detachably install it onto the first fixing component. The claw plate assembly is also used to detach the second fixing component from the first fixing component. The hot-wire coating equipment provided by this invention eliminates the need to stop the machine to open the deposition chamber during hot wire replacement and eliminates the need to perform a vacuuming operation on the chamber after replacement, directly saving time and labor costs and improving coating production efficiency.

The invention discloses a BDD electrode and a preparation method and application thereof. The preparation method of the BDD electrode comprises the following steps that S1, electroplating is conducted, specifically, a foam metal material serves as a cathode, and a Ni-W alloy layer is formed on the surface of the cathode through electroplating; s2, heat treatment is conducted, specifically, the cathode treated in the step S1 is subjected to annealing treatment at the temperature of 400-500 DEG C in the inert atmosphere; s3, surface treatment is conducted, specifically, after the cathode treated in the step S2 is cooled, mechanical treatment is conducted on the Ni-W alloy layer through a first grinding material and a second grinding material in sequence; and S4, deposition: depositing a boron-doped diamond layer on the surface of the cathode treated in the step S3 through hot filament chemical vapor deposition. According to the prepared electrode, compact and uniform boron-doped diamond film growth is achieved on the foam metal material substrate, and the electrode shows excellent conductivity and long-term stability.

The invention provides coating equipment and a coating method, and the coating method comprises the following steps: placing a substrate in a vacuum environment, and introducing at least one reaction source and a first oxygen source into the vacuum environment; the reaction source is heated through the hot wire to generate active groups, the active groups are deposited on the surface of the substrate to form a metal film layer, and meanwhile the first oxygen source catalyzes the active groups and the residual reactants. The coating equipment comprises a hot filament CVD device and an RPD device, wherein the hot filament CVD device is provided with a hot filament process cavity; the RPD device is provided with an RPD process cavity, the hot filament CVD device and the RPD device are sequentially arranged along the conveying direction of the substrate, and the hot filament process cavity is communicated with the RPD process cavity. According to the coating equipment and the coating method, the damage to the substrate during coating can be effectively reduced, so that the photoelectric conversion efficiency of the solar cell is improved.

The present invention relates to a magnetic filter plasma source device for simulating the ionospheric environment. The device includes a vacuum chamber, and a filament support electrode, a magnetic field array and a metal baffle arranged in the vacuum chamber; the filament support electrode is used for installing a hot filament; the metal baffle is arranged at the middle position near the outlet of the vacuum chamber in the vacuum chamber; the magnetic field array includes multiple groups, one of which is installed on the metal baffle to form a magnetic filter configuration, and the remaining groups form a multipole magnetic field configuration. Through this device, a plasma with a uniform distribution down to 10 5 cm ‑3 and a thickness of up to 20 cm can be achieved, and the energies of plasma electrons and ions are very close to the real ionospheric environment, which is of great significance for realizing the ground calibration of space ionospheric payloads and the ground simulation research of ionospheric physics.

The present invention relates to a method for passivating the cut edge of a solar cell, which uses hot wire chemical vapor deposition to form a passivation film layer, comprising: exposing the cut edge of the cell and facing the hot wire; passing an electric current through the hot wire to heat it, and passing H2 to perform hydrogen etching; maintaining heating, passing SiH4 at a first pressure, and simultaneously passing SiH4 and H2 while maintaining the first pressure to obtain an a-Si:H film layer; maintaining heating, and simultaneously passing SiH4 and NH3 at a second pressure to deposit SiN on the a-Si:H film layer. x :H film layer to form a passivation composite film layer on the cutting edge, or SiH4, NH3, H2 and O2 are introduced simultaneously under a second pressure to deposit SiN on the a-Si:H film layer. x O y The present invention provides a coating technology with low defect state density, high passivation performance, excellent weather resistance, and high optical transmittance, and a simple process, high cost-effectiveness, and scalable application.