58 results about "Hot filament" patented technology

The application discloses a gradient diamond / molybdenum disulfide composite self-lubricating wear-reducing engineering ceramic coating and a preparation method thereof, belongs to the technical field of full ceramic self-lubricating wear-resistant coatings, and the coating is sequentially formed of a multi-stage size progressive diamond coating and a molybdenum disulfide coating from the surface of an engineering ceramic substrate to the outside. The multi-stage size progressive diamond coating comprises a micron diamond coating, a fine-grained diamond coating and a nano diamond coating, and the molybdenum disulfide coating is deposited on the diamond coating. The diamond coating is prepared by using a hot-wire chemical vapor deposition method, and the molybdenum disulfide film covering the diamond coating is prepared by using a direct-current magnetron sputtering method. Under certain conditions, the molybdenum disulfide in the composite coating reacts with the nano diamond and is converted into onion-like carbon, so that the hardness and lubricating performance of the composite coating are improved, and the friction and wear are reduced. The composite coating prepared by using the method has more stable bonding force and adhesion, and the service life of a machine is improved.

The present application relates to a kind of anti-winding plating and anti-pollution's coating carrier plate structure, which is arranged in the process cavity of hot wire chemical vapor deposition, comprising: conveying carrier plate, silicon wafer is installed on it;Spacing plate is positioned between hot wire and conveying carrier plate, one side of spacing plate is towards hot wire, and the other side is towards the side of conveying carrier plate carrying silicon wafer;Wherein, first spacing is provided between spacing plate and conveying carrier plate, and second spacing is provided between spacing plate and hot wire.In addition, the present application also relates to a kind of coating method using the above-mentioned coating carrier plate structure and battery piece coated by the coating method.The present application can avoid winding plating and pollution problem when depositing thin film, and can directly prepare high-quality doped crystalline silicon layer without winding plating and pollution.

A coated tool, such as a rotating, cutting tool, includes a tool body and a multilayer wear protection coating system. The wear protection system coats a functional surface of the tool body that is subject to wear and includes a first undoped diamond layer and a second undoped diamond layer disposed over the first undoped diamond layer. The first undoped diamond layer is electrically conductive and exhibits grain boundary conductivity from delocalized electrons. The second undoped diamond layer is electrically insulating. The first undoped diamond layer is 4-20 microns thick and is made with diamond grains whose size ranges from 4-10 nm. The first and second diamond layers are applied by chemical vapor deposition (CVD) using a hot-wire method. The wear protection system also includes an additional undoped diamond layer that is electrically insulating and is disposed between the functional surface of the tool body and the first diamond layer.

The invention discloses a low-pressure reaction cavity gas inlet device, a deposition reaction cavity and a uniform gas supply method, and relates to the technical field of low-pressure hot filament chemical vapor deposition reaction equipment, and the gas inlet device is provided with a first area distribution cavity and a second area flow equalizing cavity which are connected in series from top to bottom to form a double-cavity sequential pressure stabilizing structure. A top plate of the first area distribution cavity is provided with an air inlet, a diffusion cap with an open upper end and a closed lower end is inserted into the air inlet, and diffusion holes are formed in the circumferential surface of the diffusion cap; and the lower plate of the first area distribution cavity is a flow limiting piece provided with a hole array. The flow dispersing cap cooperates with the flow limiting piece, concentrated inlet air is dispersed and dispersed in the first area, and leading pressure drop is established. And the gas enters the second-area flow equalizing cavity for pressure equalization, and is finally sprayed downwards through the uniform gas outlet surface at the bottom. By constructing a diffusion, pressure stabilization and pressure equalization cascade structure, a distribution mechanism dominated by pressure drop in the device is realized, upstream and downstream process fluctuation is isolated, and uniformity, stability and high repeatability of air flow supplied to a reaction cavity base station area are ensured.

A method of manufacturing a diamond watch crystal wherein the present invention employs multiple techniques to produce the final product. The method of the present invention initiates with a chemical vapor deposition process wherein a high purity graphite is employed as the source substrate. This step further deploys utilization of gases, temperature and an energy source to facilitate formation of a diamond layer on the substrate. The present invention provides alternate energy sources during the chemical vapor deposition such as but not limited to, microwave plasma, direct current plasma, inductively-coupled plasma and hot filament techniques. The method of the present invention further deploys a high pressure high temperature step subsequent the chemical vapor deposition step. These two steps are repeated wherein the initial latter step includes a diamond seed. A final high pressure high temperature step is utilized to remove impurities prior to cutting and polishing.

The application discloses a kind of based on multi-zone coordinated thermal field regulation and control large-size BDD electrode integrated preparation device and method, belong to CVD equipment technical field.The device includes reaction chamber, liftable base, multi-zone independent controllable hot wire system, composite temperature monitoring system and intelligent control system.It is in that hot wire system is divided into multiple independent temperature control subareas, and temperature measurement mode combining contact and non-contact is used, and the temperature of multiple regions on substrate surface is obtained in real time by control system, each subarea hot wire power is dynamically and independently adjusted by closed-loop control, accurate, active coordinated regulation and control of surface temperature field of large-size substrate is realized, and "edge effect" is effectively inhibited.The method can automatically prepare large-size BDD electrode, and the electrode has excellent in-plane uniformity in film thickness, doping concentration and oxygen evolution potential and other key performances.The application solves the problem of uniform preparation of large-size high-performance BDD electrode, and provides a reliable technical foundation for industrial mass production.

The invention relates to the technical field of preparation of silicon carbide coatings, in particular to a method for preparing a silicon carbide coating on a hard alloy substrate. The method comprises the following steps that firstly, a hard alloy substrate is pretreated, then the pretreated substrate is placed on a clamp in hot filament chemical vapor deposition equipment, then tetramethylsilane and hydrogen are introduced into a reaction cavity, precursor cracking is excited through a hot filament, and the hard alloy substrate is obtained. The compact and uniform silicon carbide coating is obtained on the surface of the hard alloy substrate, and meanwhile the hard alloy substrate with more excellent performance is provided. According to the method, the applicable substrate of the preparation technology of the silicon carbide coating is widened, the application range of the silicon carbide coating is expanded, and the silicon carbide coating prepared on the hard alloy substrate has high purity, good crystal quality and excellent film-substrate adhesion strength; and the wear resistance and the service life of the cutter can be obviously improved when applied to the surface of the hard alloy cutter.

The invention relates to a method for producing a transparent, scratch-resistant component, comprising the following steps: providing a substrate wafer made of glass, in particular quartz glass, which is transparent to visible light, having a metal film on the top side; growing a diamond layer on the top side of the substrate wafer by chemical vapor deposition, in particular by means of a microwave plasma chemical vapor deposition (MPCVD) process or a hot filament CVD (HFCVD) process.

The utility model relates to the technical field of photovoltaics and semiconductors, in particular to a hot wire tensioning device and chemical vapor deposition equipment, and solves the problem that a hot wire deforms and falls in a high-temperature state. The hot wire tensioning device comprises a supporting assembly, at least one butt joint assembly and at least two tensioning assemblies. The butt joint assembly is connected with the supporting assembly in an insulating mode, and the butt joint assembly is electrically connected with the first ends of the two hot wires. The at least two tensioning assemblies are located on the two sides of the butt joint assembly respectively and are in insulated connection with the supporting assembly. The tensioning assembly is electrically connected with the second end of the hot wire and generates pulling force on the hot wire in the extending direction of the hot wire through the elastic restoring force of the tensioning assembly, so that the hot wire is in a tensioned state. The two heating wires are electrically connected with the positive electrode and the negative electrode of a power source respectively. Due to the fact that the long hot wire is divided into the two short hot wires, the two short hot wires are tensioned respectively, and the problem that the hot wire is still deformed and falls due to the fact that the tension of the tensioning assembly is insufficient due to the fact that the hot wire is too long is solved.

The utility model belongs to the technical field of production and manufacturing of solar cells, and particularly relates to a horizontal hot filament CVD (chemical vapor deposition) process cavity and a vacuumizing device. The lower end face of the process cavity is connected with the vacuum pipe. The pyrolysis mechanism is arranged in the upper cover and is suitable for pyrolyzing the process gas guided into the upper cover so as to perform film coating on the silicon wafer arranged in the process cavity; the vacuumizing device comprises a pump stacking mechanism which is arranged on one side of the process cavity; wherein two ends of the vacuum tube are respectively connected with the pump stacking mechanism and the process cavity; wherein the pump stacking mechanism is suitable for extracting gas in the process cavity by using the vacuum pipe after being started, so that vacuum is formed in the process cavity.

This invention provides a hot-wire coating equipment, belonging to the technical field of photovoltaic cell coating. The hot-wire coating equipment includes a deposition chamber, a first fixing component, a second fixing component, and a claw plate assembly. The first fixing component is fixedly disposed on the inner wall of the deposition chamber. The second fixing component is disposed within the deposition chamber and detachably connected to the first fixing component; the second fixing component is used to fix the hot wire. The claw plate assembly is disposed within the deposition chamber and is used to grasp the second fixing component and detachably install it onto the first fixing component. The claw plate assembly is also used to detach the second fixing component from the first fixing component. The hot-wire coating equipment provided by this invention eliminates the need to stop the machine to open the deposition chamber during hot wire replacement and eliminates the need to perform a vacuuming operation on the chamber after replacement, directly saving time and labor costs and improving coating production efficiency.

The invention discloses a BDD electrode and a preparation method and application thereof. The preparation method of the BDD electrode comprises the following steps that S1, electroplating is conducted, specifically, a foam metal material serves as a cathode, and a Ni-W alloy layer is formed on the surface of the cathode through electroplating; s2, heat treatment is conducted, specifically, the cathode treated in the step S1 is subjected to annealing treatment at the temperature of 400-500 DEG C in the inert atmosphere; s3, surface treatment is conducted, specifically, after the cathode treated in the step S2 is cooled, mechanical treatment is conducted on the Ni-W alloy layer through a first grinding material and a second grinding material in sequence; and S4, deposition: depositing a boron-doped diamond layer on the surface of the cathode treated in the step S3 through hot filament chemical vapor deposition. According to the prepared electrode, compact and uniform boron-doped diamond film growth is achieved on the foam metal material substrate, and the electrode shows excellent conductivity and long-term stability.

The invention discloses a platinum-loaded boron-doped diamond electrode, which is characterized in that monocrystalline silicon is pretreated by using a diamond grinding liquid to obtain seeded monocrystalline silicon, and the seeded monocrystalline silicon is used as a substrate to prepare a boron-doped diamond film electrode by using a hot filament chemical vapor deposition method; then loading platinum by using an atomic layer deposition method, then putting into an acidic electrolyte, connecting an electrochemical workstation by using a standard three-electrode system, and carrying out cyclic voltammetry scanning to obtain a platinum-loaded boron-doped diamond electrode; the potential window of the boron-doped diamond film electrode is remarkably improved, the background current is reduced, and the boron-doped diamond film electrode has wide application prospects in the fields of electrocatalysis, electrochemical sensing, advanced oxidation and the like.

The application provides a hot wire architecture and a chemical vapor deposition device, and belongs to the field of hot wire chemical vapor deposition. The hot wire architecture provided by the application comprises a hot wire, a first support structure and a second support structure. The first support structure and the second support structure are arranged at intervals along a first direction. The first support structure comprises a plurality of first fixing columns arranged at intervals along a second direction. The second support structure comprises a plurality of second fixing columns arranged at intervals along the second direction. The hot wire is alternately wound around the plurality of first fixing columns and the plurality of second fixing columns along the second direction to form a hot wire array. The hot wire architecture provided by the application greatly simplifies the structure, reduces the demand for electrical contact and power supply, facilitates modular expansion, has high effective utilization rate of the hot wire, relatively low loss, is easy to maintain and replace, reduces the use cost and maintenance cost, and effectively promotes the industrialization process of hot wire CVD diamond film growth.

The invention relates to a wide-spectrum InGaAs detector which is of a mesa type and positive irradiation structure and comprises an InP substrate, an N + type InP buffer layer, an i type InGaAs absorption layer, a P + type InP cap layer, a NiOx transparent conductive cap layer, a metal electrode and a SiNx medium passivation layer at the mesa position. The NiOx transparent conductive cap layer is located above the InP cap layer and is in a P type, the structure is beneficial to absorption of visible light, especially blue light, of the detector, and the spectral response range is widened. A hot filament chemical vapor deposition technology is adopted for deposition of the SiNx medium passivation film, the deposition temperature is as low as 200 DEG C, and the H content is extremely low. According to the invention, the extremely thin P + type InP and P + type NiOx transparent conductive cap layers form the cap layer of the detector together, so that visible light, especially blue light, can be absorbed by the absorption layer, and the spectral response range of the detector is widened; the Si3N4 dielectric passivation film is rich in N and less in H, passivation of the InP / InGaAs material is facilitated, and dark current of the detector is inhibited by good passivation.

The application relates to a production line for mass production of silicon wafer edge passivation, which comprises a hot filament CVD process table assembly for depositing a passivation film on the edge of a silicon wafer; a silicon wafer loading and unloading system for respectively loading the silicon wafer on a vertical carrier plate and recovering the silicon wafer after edge passivation from the vertical carrier plate; a first and a second carrier plate rotating assembly, the first carrier plate rotating assembly is arranged on the inlet side of the process table assembly and adjacent to the silicon wafer loading system, and receives the vertical carrier plate loaded with the silicon wafer on both sides and transports the vertical carrier plate into the process table assembly, the second carrier plate rotating assembly is arranged on the outlet side of the process table assembly and adjacent to the silicon wafer unloading system, and receives the vertical carrier plate on both sides and transports the vertical carrier plate to the silicon wafer unloading system; and a carrier plate conveying assembly which is arranged between the first and the second carrier plate rotating assembly and cyclically transports the vertical carrier plate between the two. The application uses the hot filament CVD technology to passivate the edge of the silicon wafer, realizes automatic collection and placement of the silicon wafer, doubles the production capacity, and realizes deposition of multiple film layers on the silicon wafer.

This invention relates to a cavity for a hot-filament CVD photovoltaic cell edge passivation device, which is a rectangular vacuum cavity including a first dimension x, a second dimension y, and a third dimension z along the length, width, and height directions. At least two carrier channels are arranged in parallel on the end wall along the length direction. Each carrier channel has a fourth dimension b and a fifth dimension h along the width and height directions, and a flap valve sealing assembly is provided at each carrier channel. A molecular pump interface is provided on at least one of the front wall, the rear wall, and the lower wall along the height direction, for connecting a molecular pump. The dimensions are: 1.0m ≤ x ≤ 3.0m, 0.6m ≤ y ≤ 1.2m, 0.8m ≤ z ≤ 3.0m; 0.1m ≤ b ≤ 0.3m, 0.32m ≤ h ≤ 2.0m. This invention achieves optimal adaptation between the parallel and stable transport of multiple carriers and the cavity space and process vacuum environment, improving production capacity and saving costs.

The application discloses a preparation method of a high electrochemical activity nanodiamond / graphite composite film electrode. First, a nanodiamond / graphite composite film electrode is prepared through hot wire chemical vapor deposition, then, atomic layer deposition equipment is used to deposit platinum metal atoms on the surface of the composite film electrode, then, the composite film electrode is placed in an H2SO4 solution and connected to an electrochemical workstation to perform cyclic voltammetry treatment, and finally, the target electrode is obtained. The method can significantly improve the electrochemical activity area of the nanodiamond / graphite composite film electrode, provides a new idea and scheme for the design and preparation of a novel nanodiamond-based composite film electrode, and has great application prospects in the fields of electrocatalysis and electric energy storage.

The invention discloses a hot wire ignition device for an ignition test in an electric appliance and a test method, the hot wire ignition device comprises a heating assembly, a base, a top pressure providing seat and a clamping force providing seat, the heating assembly comprises a ceramic rod, a heating wire and a temperature sensor; the jacking pressure providing seat comprises a sleeve, a sliding rod penetrating through the sleeve in a sliding mode, a distance adjusting nut and a jacking pressure providing spring, the clamping force providing seat comprises a fixing cross rod, a clamping rod and a clamping force providing spring, the clamping rod is connected to the fixing cross rod, and the clamping force providing spring provides pressure for the clamping rod; and the sleeve of the jacking force providing seat and the fixed cross rod of the clamping force providing seat can be fixedly connected to the base. According to the test method, the hot filament ignition device is adopted for testing. According to the invention, fixed non-metal parts and non-fixed non-metal parts in an electric appliance can be tested, and heating of a conductor in the electric appliance is simulated, so that whether internal light-off of an electric appliance product can be triggered or not and whether flames spread out of the product or not can be evaluated.

The utility model belongs to the field of coating technology, concretely relates to a vertical hot wire CVD process chamber, and the vertical hot wire CVD process chamber includes: the shell, the inside is the coating chamber, and the lateral wall is set up with the feed inlet, the upper cover is connected with the shell, the spray module is set up in the upper cover, the hot wire module includes: a plurality of short hot wire groups and a plurality of long hot wires, the short hot wire group sets up in the spray module, the long hot wire is vertically set up in the coating chamber, the transmission module is set up at the bottom of the coating chamber, the vacuumizing mouth is set up on the lateral wall of the shell, the vertical hot wire CVD process chamber carries out the preheating to the process gas through short hot wire group, when needing coating, the preheated process gas is sent to the coating chamber, then is heated to decomposition through the long hot wire, thereby reduces the heating time of process gas in the coating chamber, and then speeds up the coating efficiency.

The utility model belongs to the technical field of production and manufacturing of solar cells, and particularly relates to a combined coating system and a hot filament process cavity, which comprise an isolation cavity, a PECVD (Plasma Enhanced Chemical Vapor Deposition) process cavity, a plurality of groups of preheating cavities and a plurality of groups of hot filament process cavities, the preheating cavity and the hot wire process cavity in the same group are connected; the preheating cavity in the next group is connected with the hot wire process cavity in the previous group; the isolation cavity is connected with the last hot filament process cavity, and the isolation cavity is connected with the PECVD process cavity; the isolation cavity is arranged between the PECVD process cavity and the last hot wire process cavity, so that amorphous silicon intrinsic layer coating of a silicon wafer is completed in the hot wire process cavity, microcrystalline silicon doping layer coating is completed in the PECVD process cavity, the cost is saved, the coating quality is ensured, and meanwhile, the overall coating deposition rate is also improved.

The invention provides a nanocrystalline diamond heterojunction ultraviolet photoelectric detector, which is characterized in that seed crystal pretreatment is carried out on monocrystalline silicon, the obtained seed crystal monocrystalline silicon is used as a substrate, acetone is used as a carbon source, boron-doped nanocrystalline diamond is grown on the surface of the substrate by using a hot filament chemical vapor deposition method, the boron-doped nanocrystalline diamond is placed in a sulfuric acid solution, and the boron-doped nanocrystalline diamond heterojunction ultraviolet photoelectric detector is obtained. And performing cyclic voltammetry treatment. Then, the titanium source precursor is partially covered and placed in atomic layer deposition equipment, and deposition circulation is conducted through the titanium source precursor; and finally, the diamond and Ti areas are coated with silver paste to form an ohmic contact electrode, and the prepared nanocrystalline diamond heterojunction ultraviolet photoelectric detector has excellent response speed, can better adapt to high-speed ultraviolet detection tasks and shows good application prospects in the fields of ultraviolet communication, rapid switch monitoring and the like.

This invention discloses a method for preparing a composite poly-Si thin film, comprising: depositing and growing an intrinsic poly-Si thin film on a single-crystal silicon substrate using a vertical double-layer hot-wire array thermal field design and a high-temperature hot-wire silane pyrolysis technique; and introducing trace amounts of NH3 or N2O gas to generate Si in situ. x N y or SiO x N y A quantum dot barrier layer is formed by introducing a doping source, PH3 or B2H6, for in-situ doping to obtain a doped source layer. The grown poly-Si thin film with the composite structure is then annealed using vacuum rapid annealing or laser annealing to activate the doping source and promote crystal growth. This process produces a poly-Si thin film with a composite structure of "intrinsic layer + barrier layer + doped layer," which improves carrier mobility and reduces parasitic absorption. This structure shows promising application prospects for developing photovoltaic cells and optoelectronic devices.

The invention discloses a high-mobility n-type nano-diamond film, which is characterized in that seed crystal pretreatment is carried out on monocrystalline silicon, the obtained seed crystal monocrystalline silicon is used as a substrate, acetone is used as a carbon source, and a hot filament chemical vapor deposition method is utilized to grow a nano-diamond film on the surface of the substrate; and placing the nano-diamond film in an acidic electrolyte, connecting the nano-diamond film with an electrochemical workstation, and performing cyclic voltammetry scanning to obtain the high-mobility n-type nano-diamond film. The n-type mobility of the thin film is improved from 158 cm < 2 > V <-1 > s <-1 > to 735 cm < 2 > V <-1 > s <-1 >, the process is simple and convenient, implementation is easy, and the method has important significance on n-type doping of diamond and application of the diamond in the field of electronic devices.

1. Name of the product in this design: Integrated hot filament chemical vapor deposition edge passivation device. 2. Application of this design: This design is used for edge passivation coating of photovoltaic silicon wafers. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The invention discloses a diamond film and a preparation method thereof, and the method comprises the steps: S1, preparing a semiconductor substrate, and carrying out the pretreatment of the semiconductor substrate; s2, cutting the semiconductor substrate, and forming a circle of groove at the central plane along the circular contour of the side surface of the semiconductor substrate; s3, the semiconductor substrate is bound along the groove through a mask metal wire, two hanging rings are arranged on the mask metal wire, and the semiconductor substrate is hung in hot filament chemical vapor deposition equipment through the hanging rings; s4, diamond films with preset thicknesses are deposited on the upper surface and the lower surface of the semiconductor substrate; and S5, cutting the semiconductor substrate on which the diamond films are deposited along a central plane to obtain two semiconductor-based diamond films. The preparation method has the effect of reducing the warping degree of the diamond film.

The application relates to a method for prolonging the life of a hot wire in a HoFCVD device during deposition of silicon nitride, comprising: preheating the hot wire with a small current; increasing the small current to a large current without ammonia gas, so that the temperature of the hot wire rapidly rises above 1950 DEG C; keeping the hot wire heated with the large current, controlling the pressure in the reaction chamber, and introducing silane and ammonia gas to deposit silicon nitride; continuing the state of the hot wire heated with the large current, and not controlling the pressure in the reaction chamber; and adjusting the large current of the hot wire to the small current for buffering. The application can effectively inhibit the increase of the resistance of the hot wire, and successfully maintain the high repeatability of the process. The application precisely controls the temperature of the hot wire at the key node, avoids the diffusion of nitrogen atoms to the inside of the hot wire in the low-temperature stage of the hot wire, greatly reduces the rising rate of the resistance of the hot wire compared with the process before optimization, greatly prolongs the life of the hot wire, and reduces the number of equipment downtime maintenance.

The utility model belongs to the field of coating technology, concretely relates to a vertical hot wire CVD is with carrier plate device and carrier plate device is with carrier plate tray, the vertical hot wire CVD is with carrier plate device, and it includes: the carrier plate frame of vertical setting, and the middle part of its one side wall is provided with the installation site of sunken type, the carrier plate tray is set up in the installation site, wherein the carrier plate tray is provided with a plurality of matrix arrangement's limiting piece placing groove, and the limiting piece placing groove is provided with the silicon wafer placing groove between the connected limiting piece placing groove, the carrier plate device and carrier plate device are with carrier plate tray for the vertical hot wire CVD, and the silicon wafer is pressed by the metal wire, because the shielding area of metal wire is small, and the end of metal wire will be raised after contacting with the silicon wafer, and the silicon wafer forms the inclination angle, avoids directly contacting with the silicon wafer, and further reduces the shielding area.

This application relates to the field of hard tool manufacturing technology, and discloses a method for preparing CVD diamond-coated micro-drills and the micro-drills prepared by this method. The preparation method includes the following steps: processing a rod raw material into a micro-drill substrate; transferring the cleaned and dried micro-drill substrate into a PVD magnetron sputtering chamber for plasma cleaning; sequentially depositing a Ti transition layer, a TiC transition layer, and an amorphous carbon sacrificial layer on the surface of the micro-drill substrate; transferring it across the chamber to a hot-filament chemical vapor deposition chamber; using plasma to etch and volatilize the amorphous carbon sacrificial layer and its surface oxides to expose the unoxidized TiC transition layer; introducing carbon source gas and hydrogen in situ; epitaxially growing a CVD diamond coating; and using a femtosecond laser to remove the deposited passivated crystal clusters. This preparation method eliminates the need for acid leaching to remove cobalt, and utilizes the preferential oxidation of the amorphous carbon sacrificial layer during the transfer process to protect the underlying TiC transition layer, thus solving the problem of transition layer oxidation failure.

The invention relates to a preparation method of a diamond film for a scalpel. The preparation method comprises the following steps: selecting and pretreating a scalpel base material; carrying out plasma thinning and sharpening treatment on the blade of the scalpel by adopting integrated equipment which is formed by combining hot filament chemical vapor deposition containing a bias power supply and plasma enhanced chemical vapor deposition; the method comprises the following steps: immersing a scalpel blade into a suspension containing nano-diamond powder, and adsorbing nano-diamond particles on the surface of the scalpel blade through ultrasonic treatment; the scalpel blade is placed in a cavity of the integrated equipment, gas containing a carbon source and hydrogen are introduced, only hot filament chemical vapor deposition is started, and the diamond film is deposited on the surface of the blade. According to the invention, the thickness of the tip area of the blade is 10-50nm, an ultra-sharp tip shape is formed, the surgical cutting precision is greatly improved, and the extreme sharpness is realized.