79 results about "Hot filament" patented technology

The invention discloses a BDD electrode material and a preparation method thereof. The preparation method comprises the following core steps: pretreating the surface of a porous titanium substrate; depositing a nanoscale TiN film layer on the surface of the pretreated porous titanium substrate in advance; depositing a layer of single-walled carbon nanotube network on the TiN thin film layer by using an electrophoretic deposition method; growing a highly-doped BDD layer on the single-walled carbon nanotube network by adopting a plasma enhanced chemical vapor deposition technology; repeating the two steps to form a multi-layer SWCNT / BDD composite structure, and controlling the thickness of the multi-layer SWCNT / BDD composite structure to be 1-50 microns; and finally, depositing a low-doped BDD active layer with the thickness of 1-5 microns by adopting a hot filament chemical vapor deposition (HFCVD) technology. According to the pulse laser assisted preparation process provided by the invention, the femtosecond laser pulse is introduced to replace traditional plasma treatment, so that the process flow is simplified, and the efficiency is improved; according to the technology, the process is simplified, the quality of the TiN film is improved through accurate energy input, and a new way is opened up for further improving the performance of the BDD electrode.

The application discloses a gradient diamond / molybdenum disulfide composite self-lubricating wear-reducing engineering ceramic coating and a preparation method thereof, belongs to the technical field of full ceramic self-lubricating wear-resistant coatings, and the coating is sequentially formed of a multi-stage size progressive diamond coating and a molybdenum disulfide coating from the surface of an engineering ceramic substrate to the outside. The multi-stage size progressive diamond coating comprises a micron diamond coating, a fine-grained diamond coating and a nano diamond coating, and the molybdenum disulfide coating is deposited on the diamond coating. The diamond coating is prepared by using a hot-wire chemical vapor deposition method, and the molybdenum disulfide film covering the diamond coating is prepared by using a direct-current magnetron sputtering method. Under certain conditions, the molybdenum disulfide in the composite coating reacts with the nano diamond and is converted into onion-like carbon, so that the hardness and lubricating performance of the composite coating are improved, and the friction and wear are reduced. The composite coating prepared by using the method has more stable bonding force and adhesion, and the service life of a machine is improved.

The present application relates to a kind of anti-winding plating and anti-pollution's coating carrier plate structure, which is arranged in the process cavity of hot wire chemical vapor deposition, comprising: conveying carrier plate, silicon wafer is installed on it;Spacing plate is positioned between hot wire and conveying carrier plate, one side of spacing plate is towards hot wire, and the other side is towards the side of conveying carrier plate carrying silicon wafer;Wherein, first spacing is provided between spacing plate and conveying carrier plate, and second spacing is provided between spacing plate and hot wire.In addition, the present application also relates to a kind of coating method using the above-mentioned coating carrier plate structure and battery piece coated by the coating method.The present application can avoid winding plating and pollution problem when depositing thin film, and can directly prepare high-quality doped crystalline silicon layer without winding plating and pollution.

A coated tool, such as a rotating, cutting tool, includes a tool body and a multilayer wear protection coating system. The wear protection system coats a functional surface of the tool body that is subject to wear and includes a first undoped diamond layer and a second undoped diamond layer disposed over the first undoped diamond layer. The first undoped diamond layer is electrically conductive and exhibits grain boundary conductivity from delocalized electrons. The second undoped diamond layer is electrically insulating. The first undoped diamond layer is 4-20 microns thick and is made with diamond grains whose size ranges from 4-10 nm. The first and second diamond layers are applied by chemical vapor deposition (CVD) using a hot-wire method. The wear protection system also includes an additional undoped diamond layer that is electrically insulating and is disposed between the functional surface of the tool body and the first diamond layer.

The invention discloses a low-pressure reaction cavity gas inlet device, a deposition reaction cavity and a uniform gas supply method, and relates to the technical field of low-pressure hot filament chemical vapor deposition reaction equipment, and the gas inlet device is provided with a first area distribution cavity and a second area flow equalizing cavity which are connected in series from top to bottom to form a double-cavity sequential pressure stabilizing structure. A top plate of the first area distribution cavity is provided with an air inlet, a diffusion cap with an open upper end and a closed lower end is inserted into the air inlet, and diffusion holes are formed in the circumferential surface of the diffusion cap; and the lower plate of the first area distribution cavity is a flow limiting piece provided with a hole array. The flow dispersing cap cooperates with the flow limiting piece, concentrated inlet air is dispersed and dispersed in the first area, and leading pressure drop is established. And the gas enters the second-area flow equalizing cavity for pressure equalization, and is finally sprayed downwards through the uniform gas outlet surface at the bottom. By constructing a diffusion, pressure stabilization and pressure equalization cascade structure, a distribution mechanism dominated by pressure drop in the device is realized, upstream and downstream process fluctuation is isolated, and uniformity, stability and high repeatability of air flow supplied to a reaction cavity base station area are ensured.

The present invention relates to a method for preparing an oxygen-doped microcrystalline silicon thin film, comprising: texturing a silicon wafer substrate to obtain a double-sided texturized silicon wafer; depositing intrinsic silicon layers on both sides of the texturized silicon wafer to obtain a first structure; placing the first structure in a hot wire chemical vapor deposition device and introducing H2 to hydrogen etch the surface of the silicon wafer; then controlling the pressure in the reaction chamber of the hot wire chemical vapor deposition device while introducing SiH4 and H2 to deposit a seeding layer on the intrinsic silicon layer on the light-facing side of the texturized silicon wafer to obtain a second structure; and simultaneously introducing SiH4, H2, N2O, and PH3 into the reaction chamber to deposit an oxygen-doped microcrystalline silicon layer on the seeding layer of the second structure. Furthermore, the present invention also relates to an apparatus for preparing an oxygen-doped microcrystalline silicon thin film using the above method. The present invention can form an oxygen-doped microcrystalline thin film on the light-facing side of, for example, a heterojunction cell using a HoFCVD device, thereby solving the problem of parasitic absorption on the light-facing side.

A method of manufacturing a diamond watch crystal wherein the present invention employs multiple techniques to produce the final product. The method of the present invention initiates with a chemical vapor deposition process wherein a high purity graphite is employed as the source substrate. This step further deploys utilization of gases, temperature and an energy source to facilitate formation of a diamond layer on the substrate. The present invention provides alternate energy sources during the chemical vapor deposition such as but not limited to, microwave plasma, direct current plasma, inductively-coupled plasma and hot filament techniques. The method of the present invention further deploys a high pressure high temperature step subsequent the chemical vapor deposition step. These two steps are repeated wherein the initial latter step includes a diamond seed. A final high pressure high temperature step is utilized to remove impurities prior to cutting and polishing.

The invention discloses a method for preparing a lubricating protective coating on the surface of a silicon carbide substrate, and belongs to the technical field of composite coating preparation, and the method comprises the following steps: (1) carrying out cleaning and drying pretreatment on the silicon carbide substrate, or sequentially carrying out cleaning and drying pretreatment and surface texturing treatment on the silicon carbide substrate; (2) carrying out surface roughening treatment on the silicon carbide substrate treated in the step (1), then putting the silicon carbide substrate into suspension containing nano-diamond, carrying out ultrasonic oscillation and crystal planting, taking out the silicon carbide substrate, drying the silicon carbide substrate, and preparing a diamond coating by utilizing hot filament chemical vapor deposition; and (3) taking boron nitride as a raw material, and compounding the boron nitride and the diamond coating on the silicon carbide substrate treated in the step (2) by utilizing a spin-coating method or a magnetron sputtering method to obtain the lubricating protective coating. According to the method, the diamond / boron nitride composite coating is used for achieving surface lubricating protection of the silicon carbide substrate, implementation is easy, and the lubricating effect is good.

The application discloses a kind of based on multi-zone coordinated thermal field regulation and control large-size BDD electrode integrated preparation device and method, belong to CVD equipment technical field.The device includes reaction chamber, liftable base, multi-zone independent controllable hot wire system, composite temperature monitoring system and intelligent control system.It is in that hot wire system is divided into multiple independent temperature control subareas, and temperature measurement mode combining contact and non-contact is used, and the temperature of multiple regions on substrate surface is obtained in real time by control system, each subarea hot wire power is dynamically and independently adjusted by closed-loop control, accurate, active coordinated regulation and control of surface temperature field of large-size substrate is realized, and "edge effect" is effectively inhibited.The method can automatically prepare large-size BDD electrode, and the electrode has excellent in-plane uniformity in film thickness, doping concentration and oxygen evolution potential and other key performances.The application solves the problem of uniform preparation of large-size high-performance BDD electrode, and provides a reliable technical foundation for industrial mass production.

The invention relates to the technical field of preparation of silicon carbide coatings, in particular to a method for preparing a silicon carbide coating on a hard alloy substrate. The method comprises the following steps that firstly, a hard alloy substrate is pretreated, then the pretreated substrate is placed on a clamp in hot filament chemical vapor deposition equipment, then tetramethylsilane and hydrogen are introduced into a reaction cavity, precursor cracking is excited through a hot filament, and the hard alloy substrate is obtained. The compact and uniform silicon carbide coating is obtained on the surface of the hard alloy substrate, and meanwhile the hard alloy substrate with more excellent performance is provided. According to the method, the applicable substrate of the preparation technology of the silicon carbide coating is widened, the application range of the silicon carbide coating is expanded, and the silicon carbide coating prepared on the hard alloy substrate has high purity, good crystal quality and excellent film-substrate adhesion strength; and the wear resistance and the service life of the cutter can be obviously improved when applied to the surface of the hard alloy cutter.

The invention relates to a method for producing a transparent, scratch-resistant component, comprising the following steps: providing a substrate wafer made of glass, in particular quartz glass, which is transparent to visible light, having a metal film on the top side; growing a diamond layer on the top side of the substrate wafer by chemical vapor deposition, in particular by means of a microwave plasma chemical vapor deposition (MPCVD) process or a hot filament CVD (HFCVD) process.

The utility model relates to the technical field of photovoltaics and semiconductors, in particular to a hot wire tensioning device and chemical vapor deposition equipment, and solves the problem that a hot wire deforms and falls in a high-temperature state. The hot wire tensioning device comprises a supporting assembly, at least one butt joint assembly and at least two tensioning assemblies. The butt joint assembly is connected with the supporting assembly in an insulating mode, and the butt joint assembly is electrically connected with the first ends of the two hot wires. The at least two tensioning assemblies are located on the two sides of the butt joint assembly respectively and are in insulated connection with the supporting assembly. The tensioning assembly is electrically connected with the second end of the hot wire and generates pulling force on the hot wire in the extending direction of the hot wire through the elastic restoring force of the tensioning assembly, so that the hot wire is in a tensioned state. The two heating wires are electrically connected with the positive electrode and the negative electrode of a power source respectively. Due to the fact that the long hot wire is divided into the two short hot wires, the two short hot wires are tensioned respectively, and the problem that the hot wire is still deformed and falls due to the fact that the tension of the tensioning assembly is insufficient due to the fact that the hot wire is too long is solved.

The utility model belongs to the technical field of production and manufacturing of solar cells, and particularly relates to a horizontal hot filament CVD (chemical vapor deposition) process cavity and a vacuumizing device. The lower end face of the process cavity is connected with the vacuum pipe. The pyrolysis mechanism is arranged in the upper cover and is suitable for pyrolyzing the process gas guided into the upper cover so as to perform film coating on the silicon wafer arranged in the process cavity; the vacuumizing device comprises a pump stacking mechanism which is arranged on one side of the process cavity; wherein two ends of the vacuum tube are respectively connected with the pump stacking mechanism and the process cavity; wherein the pump stacking mechanism is suitable for extracting gas in the process cavity by using the vacuum pipe after being started, so that vacuum is formed in the process cavity.

This invention provides a hot-wire coating equipment, belonging to the technical field of photovoltaic cell coating. The hot-wire coating equipment includes a deposition chamber, a first fixing component, a second fixing component, and a claw plate assembly. The first fixing component is fixedly disposed on the inner wall of the deposition chamber. The second fixing component is disposed within the deposition chamber and detachably connected to the first fixing component; the second fixing component is used to fix the hot wire. The claw plate assembly is disposed within the deposition chamber and is used to grasp the second fixing component and detachably install it onto the first fixing component. The claw plate assembly is also used to detach the second fixing component from the first fixing component. The hot-wire coating equipment provided by this invention eliminates the need to stop the machine to open the deposition chamber during hot wire replacement and eliminates the need to perform a vacuuming operation on the chamber after replacement, directly saving time and labor costs and improving coating production efficiency.

The invention discloses a BDD electrode and a preparation method and application thereof. The preparation method of the BDD electrode comprises the following steps that S1, electroplating is conducted, specifically, a foam metal material serves as a cathode, and a Ni-W alloy layer is formed on the surface of the cathode through electroplating; s2, heat treatment is conducted, specifically, the cathode treated in the step S1 is subjected to annealing treatment at the temperature of 400-500 DEG C in the inert atmosphere; s3, surface treatment is conducted, specifically, after the cathode treated in the step S2 is cooled, mechanical treatment is conducted on the Ni-W alloy layer through a first grinding material and a second grinding material in sequence; and S4, deposition: depositing a boron-doped diamond layer on the surface of the cathode treated in the step S3 through hot filament chemical vapor deposition. According to the prepared electrode, compact and uniform boron-doped diamond film growth is achieved on the foam metal material substrate, and the electrode shows excellent conductivity and long-term stability.

The invention provides coating equipment and a coating method, and the coating method comprises the following steps: placing a substrate in a vacuum environment, and introducing at least one reaction source and a first oxygen source into the vacuum environment; the reaction source is heated through the hot wire to generate active groups, the active groups are deposited on the surface of the substrate to form a metal film layer, and meanwhile the first oxygen source catalyzes the active groups and the residual reactants. The coating equipment comprises a hot filament CVD device and an RPD device, wherein the hot filament CVD device is provided with a hot filament process cavity; the RPD device is provided with an RPD process cavity, the hot filament CVD device and the RPD device are sequentially arranged along the conveying direction of the substrate, and the hot filament process cavity is communicated with the RPD process cavity. According to the coating equipment and the coating method, the damage to the substrate during coating can be effectively reduced, so that the photoelectric conversion efficiency of the solar cell is improved.

The present invention relates to a method for passivating the cut edge of a solar cell, which uses hot wire chemical vapor deposition to form a passivation film layer, comprising: exposing the cut edge of the cell and facing the hot wire; passing an electric current through the hot wire to heat it, and passing H2 to perform hydrogen etching; maintaining heating, passing SiH4 at a first pressure, and simultaneously passing SiH4 and H2 while maintaining the first pressure to obtain an a-Si:H film layer; maintaining heating, and simultaneously passing SiH4 and NH3 at a second pressure to deposit SiN on the a-Si:H film layer. x :H film layer to form a passivation composite film layer on the cutting edge, or SiH4, NH3, H2 and O2 are introduced simultaneously under a second pressure to deposit SiN on the a-Si:H film layer. x O y The present invention provides a coating technology with low defect state density, high passivation performance, excellent weather resistance, and high optical transmittance, and a simple process, high cost-effectiveness, and scalable application.

The invention discloses a platinum-loaded boron-doped diamond electrode, which is characterized in that monocrystalline silicon is pretreated by using a diamond grinding liquid to obtain seeded monocrystalline silicon, and the seeded monocrystalline silicon is used as a substrate to prepare a boron-doped diamond film electrode by using a hot filament chemical vapor deposition method; then loading platinum by using an atomic layer deposition method, then putting into an acidic electrolyte, connecting an electrochemical workstation by using a standard three-electrode system, and carrying out cyclic voltammetry scanning to obtain a platinum-loaded boron-doped diamond electrode; the potential window of the boron-doped diamond film electrode is remarkably improved, the background current is reduced, and the boron-doped diamond film electrode has wide application prospects in the fields of electrocatalysis, electrochemical sensing, advanced oxidation and the like.

The application provides a hot wire architecture and a chemical vapor deposition device, and belongs to the field of hot wire chemical vapor deposition. The hot wire architecture provided by the application comprises a hot wire, a first support structure and a second support structure. The first support structure and the second support structure are arranged at intervals along a first direction. The first support structure comprises a plurality of first fixing columns arranged at intervals along a second direction. The second support structure comprises a plurality of second fixing columns arranged at intervals along the second direction. The hot wire is alternately wound around the plurality of first fixing columns and the plurality of second fixing columns along the second direction to form a hot wire array. The hot wire architecture provided by the application greatly simplifies the structure, reduces the demand for electrical contact and power supply, facilitates modular expansion, has high effective utilization rate of the hot wire, relatively low loss, is easy to maintain and replace, reduces the use cost and maintenance cost, and effectively promotes the industrialization process of hot wire CVD diamond film growth.

An embodiment of the present invention provides a film coating apparatus comprising: a plasma assembly including: a first electrode assembly; a second electrode assembly, the gap between the second electrode assembly and the first electrode assembly forming a deposition space in which a material is located; and a hot wire assembly for utilizing a temperature field to decompose reactants. In the technical solution of the present invention, plasma-enhanced chemical vapor deposition and hot wire chemical vapor deposition processes are simultaneously employed to coat silicon wafers. The hot wire assembly can mitigate the side effects of ion bombardment, reducing the likelihood of film defects due to ion bombardment. Furthermore, the ion-free nature of the hot wire assembly is beneficial for improving the quality of the deposited film. Combined with the plasma-enhanced effects of the first and second electrode assemblies, the film deposition area is uniform, reducing the likelihood of the hot wire itself being coated. This facilitates the large-scale production of solar cells, achieving high-speed deposition of microcrystalline silicon and nanosilicon, and improving product quality.

The invention relates to a wide-spectrum InGaAs detector which is of a mesa type and positive irradiation structure and comprises an InP substrate, an N + type InP buffer layer, an i type InGaAs absorption layer, a P + type InP cap layer, a NiOx transparent conductive cap layer, a metal electrode and a SiNx medium passivation layer at the mesa position. The NiOx transparent conductive cap layer is located above the InP cap layer and is in a P type, the structure is beneficial to absorption of visible light, especially blue light, of the detector, and the spectral response range is widened. A hot filament chemical vapor deposition technology is adopted for deposition of the SiNx medium passivation film, the deposition temperature is as low as 200 DEG C, and the H content is extremely low. According to the invention, the extremely thin P + type InP and P + type NiOx transparent conductive cap layers form the cap layer of the detector together, so that visible light, especially blue light, can be absorbed by the absorption layer, and the spectral response range of the detector is widened; the Si3N4 dielectric passivation film is rich in N and less in H, passivation of the InP / InGaAs material is facilitated, and dark current of the detector is inhibited by good passivation.

The application relates to a production line for mass production of silicon wafer edge passivation, which comprises a hot filament CVD process table assembly for depositing a passivation film on the edge of a silicon wafer; a silicon wafer loading and unloading system for respectively loading the silicon wafer on a vertical carrier plate and recovering the silicon wafer after edge passivation from the vertical carrier plate; a first and a second carrier plate rotating assembly, the first carrier plate rotating assembly is arranged on the inlet side of the process table assembly and adjacent to the silicon wafer loading system, and receives the vertical carrier plate loaded with the silicon wafer on both sides and transports the vertical carrier plate into the process table assembly, the second carrier plate rotating assembly is arranged on the outlet side of the process table assembly and adjacent to the silicon wafer unloading system, and receives the vertical carrier plate on both sides and transports the vertical carrier plate to the silicon wafer unloading system; and a carrier plate conveying assembly which is arranged between the first and the second carrier plate rotating assembly and cyclically transports the vertical carrier plate between the two. The application uses the hot filament CVD technology to passivate the edge of the silicon wafer, realizes automatic collection and placement of the silicon wafer, doubles the production capacity, and realizes deposition of multiple film layers on the silicon wafer.

The present invention relates to the field of diamond thin film materials, and specifically to a method for preparing diamond thin films. Specifically, a nano-diamond suspension containing ionic liquid is first attached to a substrate, and then the substrate is subjected to hot filament chemical vapor deposition to obtain a diamond thin film. The diamond thin film prepared by the present invention has fine and uniform crystal grain size and a dense structure, which can meet the application requirements of more scenarios. Moreover, acetone is not used in the process of preparing the diamond thin film in the present invention, which will not cause environmental pollution and is more user-friendly to operators.

This invention relates to a cavity for a hot-filament CVD photovoltaic cell edge passivation device, which is a rectangular vacuum cavity including a first dimension x, a second dimension y, and a third dimension z along the length, width, and height directions. At least two carrier channels are arranged in parallel on the end wall along the length direction. Each carrier channel has a fourth dimension b and a fifth dimension h along the width and height directions, and a flap valve sealing assembly is provided at each carrier channel. A molecular pump interface is provided on at least one of the front wall, the rear wall, and the lower wall along the height direction, for connecting a molecular pump. The dimensions are: 1.0m ≤ x ≤ 3.0m, 0.6m ≤ y ≤ 1.2m, 0.8m ≤ z ≤ 3.0m; 0.1m ≤ b ≤ 0.3m, 0.32m ≤ h ≤ 2.0m. This invention achieves optimal adaptation between the parallel and stable transport of multiple carriers and the cavity space and process vacuum environment, improving production capacity and saving costs.

The application discloses a preparation method of a high electrochemical activity nanodiamond / graphite composite film electrode. First, a nanodiamond / graphite composite film electrode is prepared through hot wire chemical vapor deposition, then, atomic layer deposition equipment is used to deposit platinum metal atoms on the surface of the composite film electrode, then, the composite film electrode is placed in an H2SO4 solution and connected to an electrochemical workstation to perform cyclic voltammetry treatment, and finally, the target electrode is obtained. The method can significantly improve the electrochemical activity area of the nanodiamond / graphite composite film electrode, provides a new idea and scheme for the design and preparation of a novel nanodiamond-based composite film electrode, and has great application prospects in the fields of electrocatalysis and electric energy storage.

The invention discloses a hot wire ignition device for an ignition test in an electric appliance and a test method, the hot wire ignition device comprises a heating assembly, a base, a top pressure providing seat and a clamping force providing seat, the heating assembly comprises a ceramic rod, a heating wire and a temperature sensor; the jacking pressure providing seat comprises a sleeve, a sliding rod penetrating through the sleeve in a sliding mode, a distance adjusting nut and a jacking pressure providing spring, the clamping force providing seat comprises a fixing cross rod, a clamping rod and a clamping force providing spring, the clamping rod is connected to the fixing cross rod, and the clamping force providing spring provides pressure for the clamping rod; and the sleeve of the jacking force providing seat and the fixed cross rod of the clamping force providing seat can be fixedly connected to the base. According to the test method, the hot filament ignition device is adopted for testing. According to the invention, fixed non-metal parts and non-fixed non-metal parts in an electric appliance can be tested, and heating of a conductor in the electric appliance is simulated, so that whether internal light-off of an electric appliance product can be triggered or not and whether flames spread out of the product or not can be evaluated.

The present application provides a method for preparing large-scale diamond films. This method relates to the field of semiconductor technology and addresses the issues of uniform and smooth film surfaces, poor coating quality, and prolonged preparation cycles when preparing large-scale diamond films. The method comprises: S1: providing a tensioning device for an extra-long hot wire; S2: pre-treating the sample; S3: placing the sample treated in S2 on a sample tray, which is then placed on a sample stage within the reaction chamber; the distance between the sample and the hot wire is 10 to 40 mm, and the sample tray is a graphite tray or an alumina ceramic tray; S4: depositing a diamond film; the film on the sample surface is the large-scale diamond film.

Provided is a multi-scale test device for crystallization performance of high-temperature melts, including a furnace body, an atmosphere control system, an optical path system, a temperature control system and a control display system. The furnace body includes furnace body includes a cavity, a thermocouple wire, a hot wire fixing block, a hot wire welding electrode, a reflecting surface, an air inlet pipe and an air outlet pipe. The thermocouple wire, the hot wire fixing block, the hot wire welding electrode and the reflecting surface are located in the cavity, the air inlet pipe and the air outlet pipe are in communication with the cavity. The thermocouple wire is connected with the hot wire welding electrode to form a heating wire structure onto which a sample is placed, and a center of the heating wire structure is located directly above the reflecting surface.

The present invention discloses a vertical dual-chamber hot-wire CVD system and its use method, relating to the technical field of chemical deposition coating equipment. The sample chamber has a pretreatment chamber. The process chamber has a process chamber, which is connected to the pretreatment chamber. A plurality of drive rollers are arranged at the bottom of the pretreatment chamber and the process chamber. A gate valve is inserted into the side of the sample chamber near the process chamber to isolate the pretreatment chamber from the process chamber. The gate valve is also used to connect the pretreatment chamber and the process chamber when the gate valve is removed. The sample cart is located on the drive rollers and moves along the drive rollers between the pretreatment chamber and the process chamber. The sample cart has an installation chamber for mounting a substrate. The hot wire is located in the installation chamber when the sample cart moves into the process chamber, and the substrate is located on one side or both sides of the hot wire. An air inlet line is arranged at the top of the process chamber and is used to introduce a mixed gas. An exhaust system is used for vacuuming and is connected to the bottom of the pretreatment chamber and the process chamber. The present invention is used for substrate coating.

The utility model belongs to the field of coating technology, concretely relates to a vertical hot wire CVD process chamber, and the vertical hot wire CVD process chamber includes: the shell, the inside is the coating chamber, and the lateral wall is set up with the feed inlet, the upper cover is connected with the shell, the spray module is set up in the upper cover, the hot wire module includes: a plurality of short hot wire groups and a plurality of long hot wires, the short hot wire group sets up in the spray module, the long hot wire is vertically set up in the coating chamber, the transmission module is set up at the bottom of the coating chamber, the vacuumizing mouth is set up on the lateral wall of the shell, the vertical hot wire CVD process chamber carries out the preheating to the process gas through short hot wire group, when needing coating, the preheated process gas is sent to the coating chamber, then is heated to decomposition through the long hot wire, thereby reduces the heating time of process gas in the coating chamber, and then speeds up the coating efficiency.