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Method for preparing silicon thin film heterojunction solar cell

A solar cell and heterojunction technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low silane utilization rate, unstable plasma, and slow deposition speed

Inactive Publication Date: 2005-03-02
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In 2002, Japan's Sanyang Electric Co., Ltd. successfully prepared a solar cell based on this structure, and its efficiency reached 21% (High-efficiency a-Si / c-Si heterojunction solar cell "high-efficiency a-Si / c-Si heterojunction solar cell") Mass junction solar cell" T.Sawada, N.Terada, et al, Proc.of the IEEElst World Conference PVSEC (Proceedings of the First International IEEE Photovoltaic Science and Engineering Conference) p.1219, Hawaii 1994), preparation of amorphous silicon The technology used in the emission layer is plasma-enhanced chemical vapor deposition (PECVD). It has been found that this technology has some inevitable shortcomings of the process itself. First, the bombardment of the plasma on the surface of the amorphous silicon film increases the Carrier recombination defect density; second, the instability of plasma; third, under radio frequency irradiation, silane has high molecular polymerization (that is, forms powder); fourth, the deposition speed is slow; fifth, the utilization of silane low rate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1 and Example 2 are p + -a-Si / i-a-Si / n-c-Si structure solar cell, the third embodiment and the fourth embodiment are n + -a-Si / i-a-Si / p-c-Si structure solar cell:

[0020] Example one

[0021] Use step one above for chemical pretreatment.

[0022] Step 2 is used to prepare the intrinsic amorphous silicon layer. First, a thin intrinsic amorphous silicon layer ia-Si is deposited on the nc-Si crystalline silicon. The thickness of the ia-Si layer is 20nm. The specific process conditions are: the distance between the sample and the tungsten wire is 8cm, and the background vacuum of the deposition system is 5×10 -4 Pa. The reaction gas is a mixed gas of silane and hydrogen, the flow ratio of silane in the total gas is 100%, the temperature of the tungsten wire is 2100°C, the temperature of the substrate is 300°C, the deposition pressure is 0.1 Pa, and the deposition time is 2 minutes.

[0023] Use step 3 to prepare the doped emission layer, and the flow ratio of borane to...

Embodiment 2

[0028] Use the above-mentioned step one for the previous chemical pretreatment;

[0029] Step 2 is used to prepare the intrinsic amorphous silicon layer. First, a thin intrinsic amorphous silicon layer ia-Si, ia-Si layer is deposited on the nc-Si crystalline silicon with a thickness of 10nm. The specific process conditions are: sample and tungsten The distance between the wires is 8cm, and the background vacuum of the deposition system is 5×10 -4 Pa. The reaction gas is a mixed gas of silane and hydrogen, the flow ratio of silane in the total gas is 80%, the temperature of the tungsten wire is 1900°C, the substrate temperature is 250°C, the deposition pressure is 2 Pa, and the deposition time is 1 minute.

[0030] Use step 3 to prepare the doped emission layer, and the flow ratio of borane to silane is controlled at B 2 H 6 / SiH 4 =3%, another layer of p with a thickness of 30nm is deposited on the amorphous silicon layer + -a-Si emitting layer, the conductivity of the emitting la...

Embodiment 3

[0035] Use the above-mentioned step one for the previous chemical pretreatment;

[0036] Step 2 is used to prepare the intrinsic amorphous silicon layer. First, a thin intrinsic amorphous silicon layer ia-Si, ia-Si layer is deposited on the pc-Si crystalline silicon with a thickness of 20nm. The specific process conditions are: sample and tungsten The distance between the wires is 8cm, and the background vacuum of the deposition system is 5×10 -4 Pa. The reaction gas is a mixed gas of silane and hydrogen, the flow ratio of silane in the total gas is 50%, the temperature of the tungsten wire is 1800°C, the substrate temperature is 200°C, the deposition pressure is 6 Pa, and the deposition time is 2 minutes.

[0037] Step 3 is used to prepare the doped emission layer, and the flow ratio of phosphane to silane is controlled at PH 5 / SiH 4 =4%, another layer of 30nm thick n is deposited on the amorphous silicon layer + -a-Si emitting layer, the conductivity of the emitting layer is op...

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Abstract

A prepn. method of silicon thin film heterojunction solar cell includes following steps: cleaning substrate, semiconductor cleaning technology is used to do primary cleaing to substrate surface, then do ultrasonic cleaning in deionized water several times; nitrogen blow drying; prepare nitrinsic amorphous silicon layer by heater chemical vapour phase depositing technology, tungsten filament temp. is measured by pyrometer, temp of heater and sample are determined separately by two electric thermo-couples, temp. is controlled by electric temp. controller; to react and grow thin film on substrate surface; to redeposit a transmitting layer on intrinsic amorphous silicon thin film; front and back electrodes forming, sputtering technology is used to form front and back electrodes; finally to proceed vacuum heat annealing process. The thin film produced by the invention has illumination stability, the photoconduction gain can reach to 10 to the power 6 on Am1.5 100mW / cm2 standard illumination.

Description

Technical field [0001] The invention relates to a method for preparing a solar cell, in particular to a method for preparing a silicon thin film heterojunction solar cell, which is used in the field of semiconductor technology. Background technique [0002] In the past few years, heterojunction solar cells based on amorphous silicon and crystalline silicon have made breakthrough progress. This type of battery has the advantages of high efficiency and low cost, and it is very likely to become an updated product of crystalline silicon solar cells. To achieve market promotion, when producing bulk crystalline silicon solar cells, an important process required for the formation of pn junctions: high temperature diffusion, will be omitted in the production of heterojunction solar cells. The new heterojunction solar cell composed of amorphous silicon and crystalline silicon has the characteristics of simple structure and less process. It combines the advantages of high carrier mobility ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/18
CPCY02E10/50Y02P70/50
Inventor 周之斌崔容强陈鸣波赵亮孟凡英
Owner SHANGHAI JIAO TONG UNIV
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