473results about How to "Reduce hydrogen content" patented technology

In a method of forming a layer using an atomic layer deposition process, after a substrate is loaded into a chamber, a first reactant is provided onto the substrate. The first reactant is partially chemisorbed on the substrate. A second reactant is introduced into the chamber to form a preliminary layer on the substrate by chemically reacting the second reactant with the chemisorbed first reactant. Impurities in the preliminary layer and unreacted reactants are simultaneously removed using a plasma for removing impurities to thereby form the layer on the substrate. The impurities in the layer may be effectively removed so that the layer may have reduced leakage current.

Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.

A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H₂; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.

A method of forming a silicon nitride film comprises: forming a silicon nitride film by applying first gas containing silicon and nitrogen and second gas containing nitrogen and hydrogen to catalyst heated in a reduced pressure atmosphere. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate having the semiconductor layer, a gate insulation film selectively provided on a principal surface of the semiconductor layer, and a gate electrode provided on the gate insulation film; and removing the silicon nitride film on the semiconductor layer and the gate electrode and leaving a sidewall comprising the silicon nitride film on a side surface of the gate insulation film and the gate electrode by etching the silicon nitride film in a direction generally normal to the principal surface of the semiconductor layer. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate including a semiconductor layer; forming an interlayer insulation layer on the silicon nitride film; forming a layer having an opening on the interlayer insulation layer; and etching the interlayer insulation layer via the opening in a condition where an etching rate for the silicon nitride film is greater than an etching rate for the interlayer insulation layer.

A prepn. method of silicon thin film heterojunction solar cell includes following steps: cleaning substrate, semiconductor cleaning technology is used to do primary cleaing to substrate surface, then do ultrasonic cleaning in deionized water several times; nitrogen blow drying; prepare nitrinsic amorphous silicon layer by heater chemical vapour phase depositing technology, tungsten filament temp. is measured by pyrometer, temp of heater and sample are determined separately by two electric thermo-couples, temp. is controlled by electric temp. controller; to react and grow thin film on substrate surface; to redeposit a transmitting layer on intrinsic amorphous silicon thin film; front and back electrodes forming, sputtering technology is used to form front and back electrodes; finally to proceed vacuum heat annealing process. The thin film produced by the invention has illumination stability, the photoconduction gain can reach to 10 to the power 6 on Am1.5 100mW/cm2 standard illumination.

In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae Si_nH_2n and Si_nH_2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.

Process for fabricating a semiconductor device including steps of providing a semiconductor substrate having formed thereon a semiconductor device; depositing over the semiconductor device a spacer layer, the spacer layer having a first hydrogen content; and applying a treatment to reduce the first hydrogen content to a second hydrogen content. The invention is particularly useful when applied to flash memory devices such as a charge trapping dielectric flash memory device.

Methods and systems of processing a hydrocarbonaceous feed stock flows are provided. In one aspect, the method includes providing two or more hydroprocessing stages disposed in sequence, each hydroprocessing stage having a hydroprocessing reaction zone with a hydrogen requirement and each stage in fluid communication with the preceding stage. A hydrogen source is provided substantially free of hydrogen from a hydrogen recycle compressor. The hydrocarbonaceous feed stock flow is separated into an portions of fresh feed for each hydroprocessing stage, and then supplying the first portion of fresh feed with hydrogen from the hydrogen source in an amount satisfying substantially all of the hydrogen requirements of the hydroprocessing stages to a first hydroprocessing zone.

The invention discloses an electroslag remelting slag system with low hydrogen permeability, and a preparation method and a using method thereof. The slag system is prepared from the following chemical compositions in percentage by weight: 45 to 50 percent of CaF2, 10 to 15 percent of CaO, 30 to 35 percent of Al2O3, 5 to 10 percent of SiO2, and 5 to 10 percent of MgO, wherein the MgO is adopted toreplace partial CaO. The preparation method is to crush the compositions into particles after melting, and bake the particles. The using method adopts pre-melting slag and argon protection to carry out electroslag remelting. Compared with the prior art, the slag system and the methods have the advantages that: the slag system has low hydrogen permeability, can effectively reduce the hydrogen content in steel in the remelting initial stage to ensure that the hydrogen content in the steel in the normal remelting stage is maintained at a lower level, and the hydrogen content in the remelted steel is less than 1.5ppm.

This invention relates to a hydrocracking preparation of chemical materials production. Poor quality catalytic cracking Diesel and heavy hydrocracking material is mixed according to a proportion, and then hydrogenation and hydrocracking are conducted. The yield of heavy naphtha reaches 40wt% by controlling operating conditions, making sure the yield of tail oil 20wt%. The quality features of this poor quality catalytic cracking Diesel are high density, high content of aromatic hydrocarbon and low value of hexadecane. The density of the poor quality catalytic cracking diesel oil is above 0.95g/ml, and the aromatic hydrocarbon is over 90wt% and the value of hexadecane is under 20. Comparing with present technology, this invention combines poor quality catalytic cracking diesel and VGO organicly. High quality chemical material is effectively transformed with obtaining low BMCI value of tail oil, which is high quality material for ethylene preparation by steam cracking.

In a transistor including an oxide semiconductor, hydrogen in the oxide semiconductor leads to degradation of electric characteristics of the transistor. Thus, an object is to provide a semiconductor device having good electrical characteristics. An insulating layer in contact with an oxide semiconductor layer where a channel region is formed is formed by a plasma CVD method using a silicon halide. The insulating layer thus formed has a hydrogen concentration less than 6×10²⁰ atoms/cm³ and a halogen concentration greater than or equal to 1×10²⁰ atoms/cm³; accordingly, hydrogen diffusion into the oxide semiconductor layer can be prevented and hydrogen in the oxide semiconductor layer is inactivated or released from the oxide semiconductor layer by the halogen, whereby a semiconductor device having good electrical characteristics can be provided.

Ag/Al₂O₃ materials may be packaged in a suitable flow-through reactor, close coupled to the exhaust manifold of a diesel engine, and upstream of other exhaust gas treatment devices, such as a diesel oxidation catalyst and a selective reduction catalyst for NOx. The silver/alumina catalyst material uses hydrogen in a cold-start engine exhaust and serves to oxidize NO to NO₂ in the relatively low temperature, hydrocarbon-containing, exhaust during a short period following the engine cold start, and to temporarily store NOx during the start-up period. After the exhaust has heated downstream catalytic devices, the silver yields its nitrogen oxides for conversion to nitrogen by the then-operating devices before NOx is discharged to the atmosphere.

This invention relates to a hydrogenation cracking method. The method comprises: hydrogenating inferior catalytically cracked diesel oil, mixing the hydrogenation products with VGO and other raw materials, introducing into a second hydrogenation cracking zone, and separating to obtain light products and hydrogenation tail oil. The inferior catalytically cracked diesel oil is obtained by hydrogenation-transfer catalytic cracking of heavy oil and residual oil, and has such characteristics of high density, high polycyclic aromatic hydrocarbon content, and low hexadecane number. The method combines inferior catalytically cracked diesel oil and VGO, and can produce large quantities of high-quality heavy naphtha with high content of aromatic hydrocarbon, and tail oil with low MCI value.

The invention relates to a light gauge aluminum foil woolen produced with AL-Ti-C wire refiner and a preparation method. The iron-silicon rate of the woolen ranges between 4.3-5.3. The process of the preparation technology is sequentially as follows: material preparation, batching, feeding, melting, stirring, primary refining of a smelting furnace, drossing, sampling, ingredient adjustment, secondary refining of the smelting surface, drossing, converter, primary refining in a holding furnace, intensified refining in the holding furnace, online addition of AL-Ti-C wire intermediate alloy refiner, Ar online degassing, filtration, continuous casting into 7.0-7.5mm cast rolling plates, cold rolling, high-temperature homogenizing annealing of a primary sheet strap, cold rolling, trimming of a rereeling machine, cold rolling, intermediate annealing of a secondary sheet strap, cold rolling to 0.26-0.32mm, trimming of the rereeling machine, and packaging. The cost is low, the quality is stable, the calendaring of the aluminum foil and grain refining are good in effect, and the probability of generating pinholes is low during production.

The invention discloses a processing method of an anti-fatigue aluminum alloy foaming die cast. The processing method comprises the four steps of compounding, smelting, pouring, and thermal treatment. According to the invention, an appropriate amount of rare earth elements La, Ce and Y are added to the aluminum alloy, so that the hydrogen content in the alloy and the alloy yielding anisotropy can be reduced, the alloy plasticity and the anti-fatigue property of the alloy are obviously increased, and at the same time the wear resistance, thermal resistance and high-temperature strength of the alloy can also be improved. The processed aluminum alloy refrigerator foaming die cast has the advantages of good mechanical properties, high strength, good thermal resistance, good usability, good internal structure compactness, no pore and peeling defects, good wear resistance, good corrosion resistance and oxidation resistance, small expansion coefficient and the like.

The invention relates to a welding method of high-strength steel for a pressure steel pipe of a 610MPa hydropower station, belonging to the technical field of steel pipe welding. In the method, a constant-strength low-hydrogen electric welding rod is used for priming, and a constant-strength matched welding rod is adopted to continuously weld and fill a weld pass by adopting a submerged-arc welding method, wherein the welding line energy is strictly controlled to be about 30-40kJ/cm, and the interpass temperature is controlled to be 100-150 DEG C; and after welding, an aluminum silicate plate is used for covering a welding joint for slow cooling so as to realize the welding of a steel plate for a steel pipe for a 610MPa hydropower station without preheating before welding and heat treatment after welding. The method solves the problems that the traditional steel for the pressure steel pipes of the 610MPa hydropower station needs to be preheated before welding and subjected to stress relief heat treatment after welding, and the welding efficiency is low.

The invention belongs to the technical field of metallurgy, and relates to a runner type online degassing device, which comprises a runner shell, a degassing chamber, gas permeable bricks, a heat insulating cover, a vent, a first baffle plate, a second baffle plate, a middle baffle plate, a gas inlet, an inlet and an outlet; the degassing chamber is arranged in the runner shell; the heat insulating cover is movably connected with the runner shell, and is provided with the vent; two ends of the degassing chamber are provided with the inlet and the outlet; the middle of the degassing chamber is provided with the middle baffle plate; the first baffle plate is arranged between the middle baffle plate and the inlet; the second baffle plate is arranged between the middle baffle plate and the outlet; gaps are reserved between the bottoms of the first and second baffle plates and the degassing chamber; the bottom of the middle baffle plate is fixedly connected with the degassing chamber; the gas permeable bricks are embedded on the bottom of the degassing chamber and arranged between the first baffle plate and the middle baffle plate and between the second baffle plate and the middle baffle plate; and the bottoms of the gas permeable bricks are provided with the gas inlet. The runner type online degassing device has low requirement on space, is provided with the submerged baffle plates and the heat insulating cover, reduces gas absorption again and surface oxidation of degassed aluminium liquid, and has good degassing purification effect.