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6results about How to "Reduce hydrogen content" patented technology

Self-cleaning aluminum alloy welding material preparation method, system and aluminum alloy welding material

ActiveCN116174999Breduce hydrogen contentrelax strict requirementsWelding/cutting media/materialsProcess efficiency improvementRefining (metallurgy)Hydrogen content
This invention relates to the field of alloy purification technology, specifically to a method, system, and aluminum alloy welding material for preparation of self-purifying aluminum alloy welding material. The method for preparing the self-purifying aluminum alloy welding material includes the following steps: cold pressing a mixture of aluminum alloy powder and refining agent powder to obtain a cold-pressed billet; hot pressing the cold-pressed billet to obtain a hot-pressed aluminum ingot; removing impurities from the surface of the hot-pressed aluminum ingot, followed by preheating to obtain a preheated ingot; and extruding the preheated ingot into wire. This invention uses powder metallurgy to prepare aluminum alloy welding material with self-purifying function, extending the degassing method of aluminum alloy smelting to the aluminum alloy welding process. This relaxes the strict requirements on the hydrogen content of the aluminum alloy base material, achieving a weld with lower hydrogen content. The method is more efficient, more stable, and less expensive.
Owner:CHINA INNOVATION ACADEMY OF INTELLIGENT EQUIP CO LTD +2

A low-cost high-quality aluminum-lithium alloy preparation method

PendingCN122542848AImprove mechanical propertiesreduce hydrogen content
The application relates to the technical field of aluminum-lithium alloy processing, and particularly discloses a low-cost high-quality aluminum-lithium alloy preparation method, which comprises the following steps: concentrating aluminum alloy raw materials without lithium to carry out smelting, then refining and degassing to obtain a base aluminum alloy melt; maintaining and heat-insulating the base aluminum alloy melt; introducing inert gas into a transition cabin and a sealed cabin to keep the sealed cabin and the transition cabin in a micro-positive pressure state and keep the pressure in the sealed cabin higher than that in the transition cabin; placing the base aluminum alloy melt in a tundish, then transferring the tundish into the transition cabin, closing an outer cabin door, and introducing inert gas into the transition cabin; opening an inner cabin door, closing the inner cabin door after transferring the tundish into the sealed cabin, adding pure lithium raw materials into the base aluminum alloy melt, and stirring the pure lithium raw materials uniformly; and then pressure casting to obtain an aluminum-lithium alloy pressure casting part. The application can effectively avoid oxidation of lithium elements, guarantee high cleanliness and component accuracy of the melt, reduce production cost, and is suitable for popularization and application.
Owner:HUNAN ZHONGCHUANG AEROSPACE NEW MATERIAL CO LTD

Storage array and preparation method thereof, memory and electronic equipment

PendingCN121968563Agood electrical propertiesImprove mobilityElectrical performanceMechanical engineering
The embodiment of the invention provides a storage array and a preparation method thereof, a memory and electronic equipment, and relates to the technical field of electronic equipment. The memory array includes a stacked structure, a plurality of channel layers, a spacer portion, and a support portion. The stacked structure comprises a plurality of stacked first electrode layers; the stacked structure is provided with an open groove, the open groove comprises an open hole and a plurality of sub-grooves, the open hole penetrates through the multiple first electrode layers, the sub-grooves are formed in the side wall of the open hole, and the sub-grooves and the first electrode layers are arranged on the same layer. And the channel layer is arranged on the inner wall of the sub-groove and is in contact with the first electrode layer. The spacing part is arranged in the sub-groove and at least arranged on the surface, away from the first electrode layer, of the channel layer. The supporting part is at least filled in the open hole, and the interval part is arranged between the supporting part and the channel layer. The material of the spacing part is different from that of the supporting part, and the hydrogen content of the spacing part is smaller than that of the supporting part. According to the embodiment of the invention, the damage to the channel layer in the storage array is reduced, and the electrical performance of the storage array is optimized.
Owner:HUAWEI TECH CO LTD

A method for quality control of high-chromium high-nickel nitrogen-containing stainless steel ingot

The present application relates to a kind of high-chromium high-nickel nitrogen-containing stainless steel forging billet quality control method, which can not only reduce forging heating fire times and save production cost, but also effectively improve the overall quality of the forging billet, suitable for the forging billet with outer diameter ≤350mm, first manufacturing intermediate billet with certain forging ratio + intermediate billet normalizing + air cooling + hydrogen annealing + forging billet surface temperature control + limited speed heating and step temperature holding + normalizing + temperature control cooling to promote microstructure transformation + high-temperature tempering and isothermal transformation composite process, which not only reduces forging heating fire times, saves production cost, but also effectively improves the overall quality of the forging billet.
Owner:HENAN ZHONGYUAN SPECIAL STEEL EQUIP MFG CO LTD

Silicon heterojunction battery composite gradient passivation film and preparation method thereof

PendingCN121793490Areduce hydrogen contentquality improvementHeterojunctionSolar battery
The invention relates to the technical field of solar cells, in particular to a silicon heterojunction cell composite gradient passivation film and a preparation method thereof.The preparation method comprises the following steps that when an intrinsic amorphous silicon layer is prepared, only silane is introduced, then hydrogen is introduced while the flow of the silane is kept unchanged, and the intrinsic amorphous silicon layer is prepared by taking 2-4 seconds as one stage; the hydrogen / silane gas volume ratio in each stage is 1.25-2 times of the hydrogen / silane gas volume ratio in the previous stage, and the total time of introducing the hydrogen to prepare the intrinsic amorphous silicon layer is 60-120 seconds. Due to the introduction of the composite film layer with the hydrogen / silane ratio continuously changed, parameters such as the overall band gap, the refractive index and the extinction coefficient of the passive film layer are obviously improved, and more photons can reach PN junctions. The photoelectric conversion efficiency of the cell is obviously improved, and the stability is obviously improved.
Owner:MEISHAN LIANSHENG PHOTOVOLTAIC TECH CO LTD