The embodiment of the invention provides a storage array and a preparation method thereof, a memory and
electronic equipment, and relates to the technical field of
electronic equipment. The
memory array includes a stacked structure, a plurality of channel
layers, a spacer portion, and a support portion. The stacked structure comprises a plurality of stacked first
electrode layers; the stacked structure is provided with an open groove, the open groove comprises an
open hole and a plurality of sub-grooves, the
open hole penetrates through the multiple first
electrode layers, the sub-grooves are formed in the side wall of the
open hole, and the sub-grooves and the first
electrode layers are arranged on the same layer. And the channel layer is arranged on the inner wall of the sub-groove and is in contact with the first electrode layer. The spacing part is arranged in the sub-groove and at least arranged on the surface, away from the first electrode layer, of the channel layer. The supporting part is at least filled in the open hole, and the interval part is arranged between the supporting part and the channel layer. The material of the spacing part is different from that of the supporting part, and the
hydrogen content of the spacing part is smaller than that of the supporting part. According to the embodiment of the invention, the damage to the channel layer in the storage array is reduced, and the
electrical performance of the storage array is optimized.