2297 results about "Self alignment" patented technology

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

A methodology used to pinpoint the location of an implantable biomedical sensing device is provided and is carried out by integrating miniaturized magnets, or materials with magnetic properties into the implantable bio-sensing chip to detect the position of the implant by sensing the induced magnetic field via an external communication unit. Presented here are various configurations in which magnetic positional detection can be carried out. The positional information collected from these detection motifs can be used to provide feedback to the user about alignment status as well as activate a self-alignment methodology. With respect to the former, based on the positional information received the user manually adjusts the location of the external communicator into place to align with the implantable platform. In the latter scenario, various configurations allow the wireless powering and communication components on the proximity communicator to automatically find and align with the implantable biomedical sensing chip.

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

A light therapy system provides for self-alignment or positioning with respect to a joint of a subject. The light therapy system can provide light therapy to a body part of a subject. The therapy system has a main body configured to be placed adjacent a target site and an activatable light emitting system is coupled to the main body. The light emitting system is capable of delivering a therapeutic amount of light energy to the target site when the main body is placed adjacent the target site.

An inductive power transfer device is provided for recharging cordless appliances. The device includes a plurality of inductors arranged in an array and connected with a power supply via switches which are selectively operable to activate the respective inductors. The inductors serve as the primary coil of a transformer. The secondary coil of the transformer is arranged in the appliance. When the appliance is arranged proximate to the power transfer device with the respective coils in alignment, power is inductively transferred from the device to the appliance via the transformer.

An object of the present inventions is to overcome a problem that the presence of a metal film, which is opaque to a visible light, between a lower layer alignment mark and a photoresist prevents the detection of the lower layer alignment mark, to make the pattern formation difficult. In the present inventions, an insulating film is placed beneath the alignment mark in structure; an alignment mark consisting of said multi-layered film comprising an alignment mark layer and the insulating film, which constitutes a stepped part with an increased difference in level, is first formed, inside a mark hole, in a manner of self-alignment; and then the metal film which is the very cause of the above problem is formed thereon. Since the metal film itself has a stepped shape corresponding to the alignment mark, alignment can be made with great accuracy.

A femoral component (100) for a total knee joint replacement has a modular structure including a number of segments (102, 112), each of the segments (102, 112) having a femoral fixation surface (104, 114) for attachment to the distal end of a femur and at least one assembly surface (108) for joining with an adjacent segment (102, 112) of the modular femoral component (100). The assembly surfaces (108) are generally planar and arranged to be oriented generally in a plane extending in a proximal-distal direction and in an anterior-posterior direction when the femoral fixation surface (104, 114) is positioned on the distal end of the femur. Although the assembly surfaces (108) are generally planar, they may be shaped or provided with complementary structures (120) to assure self-alignment when the segments (102, 112) are assembled.

A method and apparatus for hands free inductive charging of batteries for an electric vehicle is characterized by the use of a transformer having a primary coil connected with a charging station and a secondary coil connected with a vehicle. More particularly, the when the vehicle is parked adjacent to the charging station, the primary coil is displaced via a self alignment mechanism to position the primary coil adjacent to the secondary coil to maximize the inductive transfer of charging current to the secondary coil. The self alignment mechanism preferably utilizes feedback signals from the secondary coil to automatically displace the primary coil in three directions to position the primary coil for maximum efficiency of the transformer.

The present invention provides structures and methods for a transistor formed on a V-shaped groove. The V-shaped groove contains two crystallographic facets joined by a ridge. The facets have different crystallographic orientations than what a semiconductor substrate normally provides such as the substrate orientation or orientations orthogonal to the substrate orientation. Unlike the prior art, the V-shaped groove is formed self-aligned to the shallow trench isolation, eliminating the need to precisely align the V-shaped grooves with lithographic means. The electrical properties of the new facets, specifically, the enhanced carrier mobility, are utilized to enhance the performance of transistors. In a transistor with a channel on the facets that are joined to form a V-shaped profile, the current flows in the direction of the ridge joining the facets avoiding any inflection in the direction of the current.

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of manufacture provide self-alignment of the elements. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides a memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.

Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an intervening mandrel to independently define a gate length, gate-source length, and gate-drain length with a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and/or enhancement mode operation.

This invention is about a method to make magnetic random access memory with small footprint directly on CMOS VIA with a self-aligned etching process. The process schemes of the method proceeds as: (1) Etch MTJ and BE using one or more of RIE and/or IBE processes with Ta as hard mask; (2) Etch BE using one or more of RIE and/or IBE processes with Ta & sidewall protection layer on MTJ as hard mask; and (3) Etch a part of MTJ and BE using one or more of RIE and/or IBE processes with Ta & sidewall protection layer on top portion of MTJ as hard mask. All the three schemes lead the BE to be self-aligned to MTJ cells, the photo overlay margin is not necessary and circuits could be made extremely small with lower manufacturing cost; The invention also provides schemes to prevent the electrical shorting across the tunnel barrier layer. Through trimming and sidewall protection deposition process, device performance and electrical/magnetic properties could be greatly improved.

A valvulotome device having retractable cutting blades and guide fins which permits continual centralizing, self-alignment of the cutting blades within the lumen of the vein is disclosed. The valvulotome device comprises a bifurcated assembly having a cutter head and guide head joined by a conduit member permitting communication of a catheter wire running longitudinally through the device. The cutter head and guide head each define a chamber adapted to receive the catheter wire therein. First and second wedge members are operatively engaged to the catheter wire and disposed inside a respective chamber of the cutter head and guide head which permit the surgeon to remotely manipulate the degree to which the cutting blades and guide fins emerge from the cutter head and guide head, respectively, as well as allow rotation of the device about its axis thereby increasing the maneuverability of the device as it is pulled through the vein.

In a magnetic connector acquiring connection with a mating connector by magnetic force, a base member has a particular surface to be faced to the mating connector upon connection. An electrode terminal is fixed to the base member and adapted to be electrically connected to the mating connector. The base member has a magnetic force generating portion having a plurality of magnetic poles for producing the magnetic force. N and the S poles of the magnetic poles are alternately arranged along the particular surface in a predetermined direction. Thus, the connector is properly positioned relative to the mating connector by the magnetic force.

Transistor devices can be fabricated with an integrated diode using a self-alignment. The device includes a doped semiconductor substrate having one or more electrically insulated gate electrodes formed in trenches in the substrate. One or more body regions are formed in a top portion of the substrate proximate each gate trench. One or more source regions are formed in a self-aligned fashion in a top portion of the body regions proximate each gate trench. One or more thick insulator portions are formed over the gate electrodes on a top surface of the substrate with spaces between adjacent thick insulator portions. A metal is formed on top of the substrate over the thick insulator portions. The metal forms a self-aligned contact to the substrate through the spaces between the thick insulator portions. An integrated diode is formed under the self-aligned contact.

The invention discloses an autocollimation method of a carrier aircraft rotating type strapdown inertial navigation system under a shaking base, and belongs to the field of navigation. The autocollimation method comprises the following steps of: firstly obtaining the longitude and latitude of the position of a carrier, secondly collecting output signals of a fiber-optic gyro and a quartz flexible accelerometer in an inertia measurement unit, and then carrying out automatic compensation on a constant error of an inertia device by adopting a double-shaft rotating table rotatory IMU (inertial measurement unit) to form a rotating type strapdown inertial navigation system; and then calculating a rough initial posture array by utilizing gravity acceleration in an inertial coordinate system as a reference vector, establishing a state equation and a measuring equation again of the system, designing a vanishing adaptation Kalman filter to accurately estimate a misalignment angle of the carrier, and correcting a strapdown posture matrix by utilizing the misalignment angle to finish initial alignment and enter a navigation state. The method isolates the influence of shake of a vessel to initial alignment of a carrier aircraft, and dynamic random disturbance in measured noise is restrained through estimating the initial posture array of the system via the vanishing adaptation Kalman filter method, so that rapid autocollimation of the carrier aircraft rotating type strapdown inertial navigation system is realized.