Semiconductor integrated circuit device and production method thereof

Abstract

A refresh characteristic of a DRAM memory cell is improved and the performance of a MISFET formed in the periphery thereof and constituting a logic circuit is improved. Each gate electrode in a memory cell area is formed of p type polycrystalline silicon, and a cap insulating film on each gate electrode and a sidewall film on the sidewall thereof are formed of a silicon oxide film. A polycrystalline silicon film formed on the gate electrodes and between the gate electrodes is polished by a CMP method, and thereby contact electrodes are formed. Also, sidewall films each composed of a laminated film of the silicon oxide film and the polycrystalline silicon film are formed on the sidewall of the gate electrodes in the logic circuit area, and these films are used as a mask to form semiconductor areas. As a result, it is possible to reduce the boron penetration and form contact electrodes in a self-alignment manner. In addition, the performance of the MISFET constituting the logic circuit can be improved.

Description

BACKGROUND OF THE INVENTION [0001] The present invention relates to a semiconductor integrated circuit device and a technique for manufacturing the semiconductor integrated circuit device. More particularly, the present invention relates to a technique effectively applied to a semiconductor integrated circuit device having: a highly integrated memory circuit using a spacer made of a silicon oxide film and a silicon film; and a logic embedded memory in which a memory circuit and a logic circuit are provided on the same semiconductor substrate, and applied to a production method thereof. [0002] In the conventional logic embedded memory in which the DRAM (Dynamic Random Access Memory) and the logic circuit are provided on the same semiconductor substrate, a type polycrystalline silicon film whose a conductivity type is an n type has been used for the gate electrode of an n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor). [0003] However, in order to improve the op...

AI Technical Summary

Benefits of technology

This approach enhances the refresh characteristic and driving capability of MISFETs, allows for downsizing of logic circuit transistors, and prevents boron penetration, leading to improved reliability and integration of memory cells.

Problems solved by technology

Therefore, there have been problems of the variance of a threshold voltage and the degradation of a blocking voltage due to the boron penetrated through the gate oxide.

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