Manufacturing method for raising new property of semiconductor element

Abstract

Disclosed is a method for fabricating a semiconductor device wherein boron-halo ion implantation is performed only to a bit-line contact part while masking a storage node contact part. The method comprises the steps of: performing a first ion implantation into the semiconductor substrate to control the threshold voltage Vt; forming a gate electrode on the semiconductor substrate in which the first ion implantation has been performed; performing a second ion implantation with a tilt of desired degree, using the gate electrode as a mask in order to control the threshold voltage; and performing a third ion implantation to form an LDD region in the substrate region at both sides of the gate electrode. In this method, the first ion implantation is performed at a range of below 90% of the whole doping concentration required to control the threshold voltage, and the second ion implantation is performed with a degree of below 30 DEG and in two directions or four directions vertical to the gate electrode.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor element, and more particularly to a method of manufacturing a semiconductor element capable of improving refresh characteristics due to reduced design standards. Background technique [0002] As is well known, a dynamic RAM (Dynamic Random Access Memory) element is a memory element in which stored data can be read when necessary, using metal-oxide-semiconductor transistors that act as switches and charges, i.e., capacitors that hold data A collection of dynamic RAM cells and the like are fabricated. [0003] In such a dynamic RAM element, the storage of data is equivalent to accumulating electric charge in a capacitor, and ideally, the electric charge accumulated in the capacitor is not consumed. However, the initial charge amount stored in the capacitor may be consumed by leakage current generated in the pn junction of the metal oxide semiconductor transistor, and as a result,...

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Problems solved by technology

However, the initial charge amount stored in the capacitor may be consumed by leakage current generated in the pn junction of the metal oxide semiconductor transistor, etc., and as a result, data may naturally disappear.

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