The invention relates to a
semiconductor structure and a preparation method thereof. The preparation method of the
semiconductor structure comprises the steps of providing a substrate; forming a groove in the substrate, wherein the bottom and the side wall of the groove are covered by the
dielectric layer; forming a sacrificial layer in the
dielectric layer; forming a conductive layer, wherein the upper surface of the conductive layer is lower than the upper surface of the substrate; removing the sacrificial layer to form air side walls on two opposite sides of the conductive layer; and forming an insulation
protection layer, wherein the insulation
protection layer covers the upper surface of the conductive layer and the top of the air side wall. According to the preparation method of the
semiconductor structure, the conductive layer with relatively high height is formed in the groove, and the cross sectional area of the conductive layer can be increased under the condition that the
line width of the word
line structure is kept unchanged, so that the word
line resistance is greatly reduced, the word line
conduction current is improved, and the response speed of a
transistor is improved; in addition, the air side walls are formed on the two opposite sides of the conducting layer, so that the
electric field between the grid
electrode and the drain
electrode can be reduced, the GIDL is reduced, the
crystal power consumption of the
transistor is reduced, and the reliability of the
transistor is improved.