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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems affecting device reliability, and achieve the effect of reducing GIDL and vertical electric field strength

Active Publication Date: 2021-11-05
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the inventors of the present application have found that for some FinFET devices, such as input / output (I / O) devices, the gate-induced drain leakage (gated-induce drain leakage, GIDL) is relatively large, thereby affecting the performance of the device. reliability

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0035] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be understood that the relative arrangements of components and steps, numerical expressions and values ​​set forth in these embodiments should not be construed as limiting the scope of the present application unless specifically stated otherwise.

[0036] In addition, it should be understood that, for the convenience of description, the dimensions of the various components shown in the drawings are not necessarily drawn according to the actual scale relationship, for example, the thickness or width of some layers may be exaggerated relative to other layers.

[0037] The following description of the exemplary embodiments is illustrative only and is not intended to limit the application, its application or uses in any way.

[0038] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discus...

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Abstract

The application discloses a semiconductor device and a manufacturing method thereof, which relate to the technical field of semiconductors. The apparatus comprises: a substrate; a first fin on the substrate for a first device; a first gate structure on a portion of the first fin, comprising: a first gate dielectric layer on a portion of the sheet; and a first gate on the first gate dielectric layer; and at least partially on either side of the first gate structure on the first fin The first source region and the first drain region; wherein, the part of the first gate dielectric layer adjacent to the first drain region is the first part, and the first gate dielectric layer and the first source The part adjacent to the region is a second part, the part of the first gate dielectric layer between the first part and the second part is a third part, and the thickness of the first part is greater than that of the third part. thickness. This application can reduce the GIDL of the device.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the reduction of critical dimensions of metal oxide semiconductor field effect transistors (Metal Oxide Semiconductor Field Effect Transistor, MOSFET), the short channel effect (Short Channel Effect, SCE) becomes more and more serious. Fin field effect transistors (Fin Field Effect Transistors, FinFETs) have good gate control capabilities and can effectively suppress SCE. [0003] However, the inventors of the present application have found that for some FinFET devices, such as input / output (I / O) devices, the gate-induced drain leakage (gated-induce drain leakage, GIDL) is relatively large, thereby affecting the performance of the device. reliability. Contents of the invention [0004] One object of the present application is to reduce the GIDL of the device. [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336H01L27/088
CPCH01L27/0886H01L29/42368H01L29/66787H01L29/7853
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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