678 results about "Conduction current" patented technology

A sensing module operates with a sense amplifier sensing a conduction current of a memory cell via a coupled bit line under constant voltage condition in order to minimize bit-line to bit-line coupling. The rate of discharge of a dedicated capacitor as measured by a change in the voltage drop there across in a predetermined period is used to indicate the magnitude of the conduction current. The voltage cannot drop below a minimum level imposed by a circuit for maintaining the constant voltage condition on the bit line. A voltage shifter is used to boost the voltage during the discharge and to unboost the voltage after the discharge, so that the change in voltage drop properly reflects the rate of discharge without running into the minimum level.

One or more sense amplifiers for sensing the conduction current of non-volatile memory is controlled by signals that are timed by a reference sense amplifier having similar characteristics and operating conditions. In one aspect, a sensing period is determined by when the reference sense amplifier sensing a reference current detects an expected state. In another aspect, an integration period for an amplified output is determined by when the reference sense amplifier outputs an expected state. When these determined timings are used to control the one or more sense amplifiers, environment and systemic variations are tracked.

A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally of materially greater gate dielectric thickness than the surface-channel IGFET so as to operate across a greater voltage range than the surface-channel IGFET. Alternatively or additionally, the channel-junction IGFET may conduct current through a field-induced surface channel. A p-channel surface-channel IGFET (102 or 162), which is typically of approximately the same gate-dielectric thickness as the n-channel surface-channel IGFET, is preferably combined with the two n-channel IGFETs to produce a complementary-IGFET structure. A further p-channel IGFET (106, 180, 184, or 192), which is typically of approximately the same gate dielectric thickness as the n-channel channel-junction IGFET, is also preferably included. The further p-channel IGFET can be a surface-channel or channel-junction device.

The invention provides a pixel circuit and a driving method thereof, an array substrate, a display panel and a display device. The pixel circuit comprises a light-emitting component, a driving transistor, a first storage capacitor, a light-emitting control module, a data write-in module and a compensation module. The data write-in module controls data voltage Vdata to be written into a second pole of the driving transistor in the compensation stage; and the compensation module controls a first pole of the driving transistor to be connected with the grid electrode of the driving transistor in the compensation stage to control the driving transistor to be conducted and control the conduction current of the driving transistor to flow from the second pole of the driving transistor to the first pole of the driving transistor until the electric potential of the grid electrode of the driving transistor is Vdata+Vth, wherein the Vth is a threshold voltage of the driving transistor. The problem that the threshold voltage of the driving transistor cannot be compensated in the light-emitting stage, and thus uniformity of brightness of the display panel is poor in the prior art is solved.

Building programmable resistive devices in contact holes at the crossover of a plurality of conductor lines in more than two vertical layers is disclosed. There are plurality of first conductor lines and another plurality of second conductor lines that can be substantially perpendicular to each other, though in two different vertical layers. A diode and/or a programmable resistive element can be fabricated in the contact hole between the first and second conductor lines. The programmable resistive element can be coupled to another programmable resistive device or shared between two programmable devices whose diodes conducting currents in opposite directions and/or coupled to a common conductor line. The programmable resistive memory can be configured to be programmable by applying voltages to conduct current flowing through the programmable resistive element to change its resistance for a different logic state.

An apparatus for converting direct voltage into alternating voltage and conversely comprises a VSC-converter (8) having a direct voltage intermediate link (9) and at least one phase leg (12, 13). Each current valve (14-17) of the phase legs has at least one semiconductor device of turn-off type and a rectifying member connected in anti-parallel therewith. A transformer (19) has two opposite ends of a first winding (20) thereof connected to an output (21, 22) each of the VSC-converter and a second winding (23) connected to a direct converter having at least one phase leg. Each of the current valves of the direct converter being able to conduct current and block voltage in both directions and to turn on by gate control. A midpoint (27) of the phase leg of the direct converter is provided with a phase output for forming a terminal for the alternating phase voltage between this output and a further phase output (28).

Shifts in the apparent charge stored on a floating gate of a non-volatile memory cell can occur because of coupling of an electric field based on the charge stored in adjacent floating gates. The shift in apparent charge can lead to erroneous readings by raising the apparent threshold voltage, and consequently, lowering the sensed conduction current of a memory cell. The read process for a selected memory cell takes into account the state of one or more adjacent memory cells. If an adjacent memory cell is in one or more of a predetermined set of programmed states, a compensation current can be provided to increase the apparent conduction current of the selected memory cell. An initialization voltage is provided to the bit line of the programmed adjacent memory cell to induce a compensation current between the bit line of the programmed adjacent memory cell and the bit line of the selected memory cell.

Sensing circuits for sensing a conduction current of a memory cell among a group of non-volatile memory cells being sensed in parallel and providing the result thereof to a data bus are presented. A precharge circuit is coupled to a node for charging the node to an initial voltage. An intermediate circuit is also coupled to the node and connectable to the memory cell, whereby current from the precharge circuit can be supplied to the memory cell. The circuit also includes a comparator circuit to perform a determination the conduction current by a rate of discharge at the node; a data latch coupled to the comparator circuit to hold the result of said determination; and a transfer gate coupled to the data latch to supply a result latched therein to the data bus independently of the node. This arrangement improves sensing performance and can help to eliminate noise on the analog sensing path during sensing and reduce switching current.

One kind of mechanical type automatic vertically well-drilling tool, including turner, the conduction current head, the bearing, the counterweight, the spindle, in-tube, the back plate, above plate-valve, gets down plate-value, the shell, the piston cylinder back plate and the piston, its principle is at the right moment induces the well slanting gravity signal, by the gravity-actuates in the organization, the establishment drills inside and out the column high-low pressure channel between the fluid, uses two between the differential pressure, actuates the piston at the right moment to push depends on the wall of a well is high side, the wall of a well reacting force then pushes the drill bit to is low side, but in well-eye other positions, the piston does not push depends on the wall of a well, drills the column revolves, this process circulation reciprocation, the well is slanting namely is unceasingly induced and the revision, this invention realization is initiative, At the right moment guards against slanting at the same time, but also can effectively liberate distilling, largely enhances drills fast and well-eye the quality, reduces the construction risk, this invention has the structure is simple, reliable, is suitable to the many kinds of well drilling platform, the processing makes the maintenance cost is low and so on the characteristic.

One or more sense amplifiers for sensing the conduction current of non-volatile memory is controlled by signals that are timed by a reference sense amplifier having similar characteristics and operating conditions. In one aspect, a sensing period is determined by when the reference sense amplifier sensing a reference current detects an expected state. In another aspect, an integration period for an amplified output is determined by when the reference sense amplifier outputs an expected state. When these determined timings are used to control the one or more sense amplifiers, environment and systemic variations are tracked.

Source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits. During sensing the control gate voltage of a memory cell is erroneously biased by a voltage drop across the resistance. This error is minimized when the current flowing though the ground loop is reduced. A method for reducing source line bias is accomplished by read/write circuits with features and techniques for multi-pass sensing. When a page of memory cells are being sensed in parallel, each pass helps to identify and shut down the memory cells with conduction current higher than a given demarcation current value. In particular, the identified memory cells are shut down after all sensing in the current pass have been completed. In this way the shutting down operation does not disturb the sensing operation. Sensing in subsequent passes will be less affected by source line bias since the total amount of current flow is significantly reduced by eliminating contributions from the higher current cells. In another aspect of sensing improvement, a reference sense amplifier is employed to control multiple sense amplifiers to reduce their dependence on power supply and environmental variations.

A controller for a power converter is provided. The controller includes a sense current integrating circuit, a reference current integrating circuit and a drive signal generation circuit. The sense current integrating circuit performs an integrating operation to a sense current representative of a conduction current flowing through a power switch of the power converter and thereby outputs a first integrating result. The reference current integrating circuit performs another integrating operation to a reference current and thereby outputs a second integrating result. The drive signal generation circuit determines a switching period of the power switch according to a status of an output voltage of the power converter cooperative with a relative magnitude relationship between the first integrating result and the second integrating circuit. Furthermore, a controlling method for such power converter also is provided.

A current interrupt device for rechargeable, electrochemical cells having a safety valve, insulating spacer and a thin metal plate for coupling to an electrode assembly is provided. The thin metal plate electrically couples to the safety valve by way of a conductive polymer, preferably having a positive temperature coefficient characteristic. The positive temperature coefficient characteristic is such that the impedance of the polymer increases with increasing temperature. In normal operation, the polymer conducts current. In high current situations, where internal components heat due to parasitic resistances, the polymer becomes an insulator and disconnects the cell from the exterior can. When gasses build within the cell, the safety valve deforms, thereby causing the safety valve to separate from the thin metal plate. Once the safety valve and thin metal plate have separated, the electrode assembly is electrically isolated from the exterior can.