268 results about "Conduction current" patented technology

The invention relates to a connecting device (1) for electrically connecting at least two terminals, comprising: - at least one connecting element (2) designed for conducting current between the at least two terminals, with at least two contact areas (2a, 2b) for electrical and mechanical connection to the respective terminal, wherein the connecting element (2) comprises a metallic material (3) and a passivation layer (4) that forms at least in one fault condition and encloses the metallic material (3), and - a flux (8) that can be thermally activated by heat input due to a fault condition, which is designed to remove the passivation layer (4) in order to cut through the connecting element (2) in the molten area (2c) in the case of a fault condition that melts only the metallic material (3).

The invention discloses a superconducting connector for a star simulator and a superconducting cable assembly. The superconducting connector comprises a supporting seat, a connector guide seat and a clamping assembly which are fixedly connected in sequence in the length direction of the superconducting connector. A first boss and a second boss are arranged on the supporting seat in a spaced mode in the extending direction perpendicular to the length direction, a through hole is formed in each boss in the first boss and the second boss, a first guide hole and a second guide hole are formed in the connector guide seat in a spaced mode, and the clamping assembly comprises a first sleeve and a second sleeve which are arranged in the extending direction in a spaced mode. According to the superconducting connector, when the first superconducting cable and the second superconducting cable are electrically connected, the first cable connecting part and the second superconducting cable connecting part are jointly limited by the supporting seat, the guide seat and the clamping assembly, so that the risks of deviation, hinging and disconnection of the connecting position of the first superconducting cable and the second superconducting cable are reduced; therefore, current can be stably conducted between the first superconducting cable and the second superconducting cable.

The invention relates to power semiconductor device on-line monitoring and power electronic system control, in particular to a SiC MOSFET conduction current extraction circuit and method, high-frequency oscillation interference is effectively suppressed through a second-order passive RC filter circuit, a measurement error less than or equal to 1.5% is realized within a current range of 50A-300A in combination with an accurate mathematical model established by a depth symbol optimization algorithm, and the measurement accuracy is improved. The requirement of the intelligent gate driver on high-precision current feedback is met, and the measurement precision is remarkably improved; the pulse width direct analysis technology is adopted, a traditional active integrator and a digital decoding link are omitted, the system response delay is smaller than or equal to 500 ns, microsecond-level over-current protection can be supported, the response speed and the real-time performance are optimized, and the system safety in a high-frequency application scene is remarkably improved.

A new inverting logic gate or a FET gate driver is disclosed. The logic gate mitigates the trade-off between power dissipation (or quiescent power) and slew rate of the typical RTL and DLL buffers by using an innovative circuit topology involving a pull-up bootstrapping transistor. The bootstrapping transistor may be an enhancement mode GaN field effect transistor (FET). This bootstrapping transistor may be driven by the complement of the input signal. Alternatively, the bootstrapping transistor may monitor the drain terminal of the pull-down transistor and conduct current accordingly. Other Boolean functions may also be achieved using this approach.

An integrated circuit (IC) may include a pillar bar disposed in a bar area over a row of transistors to conduct a current through the transistors and to conduct heat away from the transistors. The pillar bar includes a top metal layer, a bottom metal layer coupled to a terminal of each of the transistors in the row, and at least one intermediate layer between the top metal layer and the bottom metal layer. When heated by the transistors, the metal in the pillar bar expands at a different rate than the IC substrate, causing heat-related stress that may damage the IC. In a pillar bar disclosed herein, one of the intermediate layers includes separate metal regions separated by a non-metal material in the bar area. The pillar bar includes a central metal region and separate metal regions between the central metal region and the ends of the pillar bar.

The invention provides a bias protection and pulse width equalization control method and system for a vehicle power supply module, and relates to the technical field of module control, and the method comprises the steps: obtaining an input voltage and an output current signal, and calculating an instantaneous power value and an output power value; calculating the inductance value of the transformer to judge the magnetic biasing state; collecting a switch tube conduction current waveform, calculating a time difference value, generating a compensation parameter, and adjusting the actual conduction time; dividing the output power into a plurality of power intervals, setting duty ratio calculation parameters, and generating pulse width signals with different duty ratios to control a switching tube; and the output power value is monitored in real time to realize overload protection. The problem of magnetic bias of the transformer is solved, switching loss is reduced, and reliability of the power supply module is improved.

To provide a surgical system causing a result effective to biological tissues.SOLUTION: An apparatus and associated method relate to controlling electrical power of an electrotherapeutic signal that is provided to a biological tissue engaged by an electrosurgical instrument during a medical procedure. Electrical power, a product of a voltage difference across and an electrical current conducted by the engaged biological tissue, is controlled according to a therapeutic schedule. The electrotherapeutic schedule can be reduced or terminated in response to a termination criterion being met. In some examples, the termination criterion is a current characteristic, such as a decrease in current conducted by the engaged biological tissue. In some examples, the termination criterion is a biological tissue resistance characteristic, such as an increase in the biological tissue resistance that exceeds a predetermined delta resistance value.SELECTED DRAWING: Figure 1

An apparatus is provided that includes a NAND string including a first memory cell coupled to a first word line, and a control circuit coupled to the NAND string. The control circuit is configured to apply a verify voltage to the first word line, perform a verify test on the first memory cell to sense a hole conduction current, and perform a program operation on the first memory cell without performing a pre-charge operation.

The disclosure relates to a method for mapping an input vector to an output vector by means of a matrix circuit which has memory cells arranged in a matrix in a plurality of rows and a plurality of columns and first, second and third lines, each memory cell having an adjustable memory state, is connected to the first line (22) of the corresponding row, is connected to the second and third lines of the corresponding column and is set up to generate an electrical current (I1, I2, I3) depending on the memory state and voltages applied to the first, second and third lines, is connected to the second and third lines of the corresponding column and is arranged to conduct an electric current (I1, I2, I3) into the third line (26) as a function of the memory state and voltages applied to the first, second and third lines, each memory cell having a semiconductor switching element (28) with a control terminal which is connected to the second line (24) of the corresponding column; wherein input voltages (U1, U2, U3) corresponding to components of the input vector are applied (110) to the first lines; wherein for each column: a ramp voltage (V1, V2, V3) is applied (120) to the second line assigned to the column, the level of which is increased with time (130); a total current is detected at the third line assigned to the column and a time period elapsed since a start time of the level increase of the corresponding ramp voltage is determined (150) until the magnitude of the total current reaches a certain current magnitude threshold (Ig) (140); and a component of the output vector corresponding to the column is determined (170) based on the elapsed time period (t1, t2, t3).

The invention relates to a silicon carbide multi-channel longitudinal groove type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a manufacturing method thereof, and belongs to the technical field of silicon carbide semiconductors. The device comprises a substrate, a drift region arranged on the substrate and a plurality of grooves arranged in the drift region, wherein the plurality of grooves are periodically arranged along the transverse direction; the groove extends along a direction vertical to the surface of the substrate; gate oxide layers and gates located on the gate oxide layers are arranged on the two sides in the trenches respectively, channel regions are formed between the adjacent trenches and at the bottoms of the trenches in the drift region, source regions and body contact regions are formed in the channel regions, intermetallic dielectric layers are formed between the surfaces of the gates and the source regions, top-layer source metal is formed on the source regions, and bottom-layer source metal is formed on the body contact regions. And an ohmic contact layer is formed between the source electrode region and the top layer source electrode metal. According to the device disclosed by the invention, the inverted conduction channels are simultaneously formed in the side walls and the bottoms of the grooves, so that conduction current flows in parallel in the longitudinal and transverse directions, and the number of the effective conduction channels is remarkably increased.

The present disclosure relates to a power module designed to have balanced current flow for each parallel power switch such that each power switch has a similar current path length. The power module can include a first plurality of power switches electrically coupled to a first region and a second plurality of power switches electrically coupled to a second region. A first plurality of conductive clips is configured to conduct a first plurality of currents and a second plurality of conductive clips is configured to conduct a second plurality of currents. The power module can include a first leadframe configured to apply a positive voltage to the first region, a second leadframe configured to conduct current from the second region, and a third leadframe configured to conduct current from the third region.

The embodiments of the present invention disclose a bandgap reference circuit, a reference voltage source, and a reference voltage generation method. The circuit includes a current module, a differential input module, a limit module, a feedback module, and a voltage divider module. The differential input module generates a first conduction current and a second conduction current in response to a first voltage signal and a second voltage signal of the voltage divider module, respectively, and further outputs a first output current and a second output current, respectively. The limit module outputs a drive signal in response to the first output current and the second output current to control the feedback module to adjust the first voltage signal and the second voltage signal so that the first output current and the second output current are equal, so that the differential input module outputs a reference voltage with a zero temperature coefficient. The limit module includes a matching resistor or a low transconductance switch tube to reduce the offset voltage. The present invention reduces the offset voltage of the limit module and improves the accuracy of the reference voltage by setting a matching resistor or a low transconductance switch tube in the limit module.

A signal transmission device has an initial signal stabilization mechanism and includes a driver and a bypass circuit. The driver includes: a first current source circuit coupled between a high voltage terminal and a first node; a second current source circuit coupled between a low voltage terminal and a second node; and a driving circuit coupled between the first node and the second node. The driving circuit outputs an output signal according to a first bias voltage of the first node, a second bias voltage of the second node, and an input signal during a signal output operation. The bypass circuit is coupled between the first node and the second node. In the beginning of the signal output operation, the bypass circuit conducts a current from the first node to the second node to assist in establishing the first and second bias voltages and thereby stabilize the output signal.

The material of this design is metal. This design is a probe pin, used to connect electrodes, terminals, pads, etc., of the object under test to a circuit, and to inspect electronic components such as semiconductor devices, semiconductor packages, integrated circuits, and printed circuit boards. This design improves the stability of contact with the ends of the IC by forming a crown-shaped contact terminal on the top. In this design, the electrical signal during inspection flows from the upper probe connected to the circuit board and IC, through the lower probe, to the object. At maximum compression, the upper and lower probes directly contact the IC and circuit board simultaneously to conduct current. The main feature of this design is the shape of the "integrated circuit inspection probe pin". 1.1) Perspective view; 1.2) Front view; 1.3) Rear view; 1.4) Left side view; 1.5) Right side view; 1.6) Top view; 1.7) Bottom view; 1.8) Reference drawing

The embodiment of the invention discloses a band-gap reference circuit, a reference voltage source and a reference voltage generation method, and the circuit comprises a current module, a differential input module, a limiting module, a feedback module and a voltage division module, the differential input module responds to a first voltage signal and a second voltage signal of the voltage division module to generate a first conduction current and a second conduction current respectively, and then outputs a first output current and a second output current respectively; and the limiting module responds to the first output current and the second output current, and outputs a driving signal to control the feedback module to adjust the first voltage signal and the second voltage signal, so that the first output current is equal to the second output current, and the differential input module outputs the reference voltage with the zero temperature coefficient. The limiting module comprises a matching resistor or a low-transconductance switch tube so as to reduce the offset voltage. The matching resistor or the low-transconductance switch tube is arranged in the limiting module, so that the offset voltage of the limiting module is reduced, and the accuracy of the reference voltage is improved.

This invention provides a bidirectional transient voltage suppressor with low dynamic resistance and high surge capability, comprising: a heavily doped semiconductor substrate of a first conductivity type; a first epitaxial layer disposed on the substrate; a conduction modulation buried layer disposed on the first epitaxial layer; a second epitaxial layer disposed on the conduction modulation buried layer; a heavily doped first conductivity type region disposed on the second epitaxial layer; a first electrode disposed on the front side of the heavily doped first conductivity type region and a second electrode disposed on the back side of the substrate; the conduction modulation buried layer is disposed inside the double epitaxial body region and is configured to form a high-concentration conductivity modulation region of charge carriers under transient high current impact conditions, forming a body region-dominated conduction path between the first epitaxial layer and the second epitaxial layer, so that the conduction current changes from concentrated conduction in the PN junction region to a laterally extended and planar distributed overall conduction mode within the body region, thereby reducing the dynamic resistance of the device and improving the surge carrying capacity of the device.

A semiconductor device includes a substrate, drift, source, gate and base regions, and a drain portion. The substrate is doped with a first dopant type. The drift region is disposed above the semiconductor substrate, and is doped with the first dopant type at a lower concentration. The source region is doped with the first dopant type. The gate region is disposed above the drift region and part of the source region. The base region is disposed between the source and drift regions. The base region includes a first trench extending in a first direction, and a second trench extending in a second direction and intersecting the first trench. The trenches extend into a top surface of the base region. Each trench has at least a vertical wall and at least a horizontal wall. The base region conduct current on the vertical and horizontal walls of the trenches.

A method and device for cavitation-plasma treatment of liquid is disclosed. The device has an elongated body housing that encloses a working chamber having a plasma discharge body, with a cavitation body after the working chamber. The working chamber is a cylindrical channel having a confusor at its inlet and a diffuser at its outlet. The plasma discharge body has an inlet electrode disposed in the inlet of the working chamber with a discharge end extending through the confusor into the cylindrical channel, as well as an outlet electrode disposed in the outlet with a charge end extending through the diffuser into the cylindrical channel. The inlet electrode and outlet electrode conduct an electrical current through the working chamber in such a way as to generate a plasma by applying high- voltage direct or alternating current to the liquid flow.

In an example, a Hall sensor can include an IC die formed on a lead frame that is configured to conduct a current, the IC die being configured to sense a magnetic field resulting from the current. The Hall sensor can include at least one magnetic permeability material film formed on the IC die. The Hall sensor can include at least one permalloy material layer formed on the respective at least one magnetic permeability material film, the at least one magnetic permeability material film and the at least one permalloy material layer combining to provide a magnetic concentrator providing concentration of the magnetic field.

In one example, a circuit interrupter includes a bus bar configured to conduct a current and configured to connect to an electrical grid. The circuit interrupter includes a bus bar cutter configured to sever the bus bar, a temperature compensation circuit including a resistance-temperature-coefficient (RTC) circuit configured to provide a temperature-compensated delay, and a detonator firing circuit configured to trigger the bus bar cutter in response to the temperature-compensated delay. The temperature-compensated delay is based on a voltage across a resistance temperature detector (RTD).

The application discloses a diode load type high-voltage level shift circuit with anti-negative voltage capability, and belongs to the technical field of power electronics and power integrated circuits. The application comprises a narrow pulse generation circuit, a level shift module, a cross-coupled current mirror module, a current-voltage conversion module and an RS latch. The narrow pulse generation circuit converts an input signal into two narrow pulse signals, controls the conduction and turn-off of an LDMOS tube in the level shift module, the cross-coupled current mirror module cross-mirrors the conduction current of the LDMOS tube, and outputs a clean and stable narrow pulse level signal through the current-voltage conversion module; and the RS latch restores the narrow pulse signal into a normal signal. The application adopts a diode load to replace a traditional resistor, reduces the sensitivity of an output voltage to resistance, avoids the breakdown of a gate in a later stage, and significantly improves the anti-negative voltage capability through optimization of a current path, and has the advantages of simple structure, high reliability, good temperature stability and the like.

The utility model discloses an electroplating contact conductive structure and electroplating equipment, and the electroplating contact conductive structure comprises the following steps: a mounting box in which a dissolving tank is arranged; the front ends of the fixing blocks are installed in the dissolving tank, the rear ends of the fixing blocks are connected with an external circuit, the hanging tool contact blocks are in contact conduction with the fixing blocks to form a parallel circuit, the contact surfaces are submerged in dissolving liquid of the dissolving tank, the front ends of the fixing blocks are installed in the dissolving tank through the supporting blocks, the surfaces of the front ends of the fixing blocks are horizontal and flat, and the front ends of the fixing blocks are in contact conduction with the hanging tool contact blocks. The hanging tool contact block is electrically connected with an electroplating hanging tool of the electroplating technology through a wire, the rear end of the fixing block is electrically connected with a rectifying machine of the electroplating technology through a wire, and the rear end of the fixing block is electrically connected with the rectifying machine of the electroplating technology through a wire. And crystal particles are not easy to accumulate, the electroplating conduction current is stable, the liquid level is highly and dynamically balanced, and the normal electroplating effect is ensured.

The application provides a super-junction IGBT device and a manufacturing method thereof, and a specific technical scheme is as follows: the application connects the positive forward conduction current path, the off hole extraction path and the separation of the super-junction IGBT through a P column region, and connects the front P type region with the second P column region, so that a longitudinal PNP structure is formed, the super-junction IGBT structure can be opened under the strong collector-emitter voltage of the short-circuit device, and the short-circuit current discharge channel of the super-junction IGBT structure can be formed through the bipolar transistor. The application provides the super-junction IGBT with innovation and practicability, the electron injection enhancement structure and the off hole extraction path are optimized, and the compromise of the conduction performance, the switching characteristic and the short-circuit capability of the super-junction IGBT is significantly improved.

A device for interacting with a quantity of a sample, the device, comprising: a substrate comprising a first surface and a second surface, wherein the first surface is opposite to the second surface; an electrically-thin conductive layer disposed on the first surface of the substrate and configured to contact a first portion of the sample; a buried electrode disposed on the second surface of the substrate, the buried electrode being capacitively coupled with the electrically-thin conductive layer; and at least one electrode in contact with a second portion of the sample, wherein the second portion of the sample is remote from the first portion of the sample, and further wherein the at least one electrode and the electrically-thin conductive layer electrically interact via the sample; wherein the substrate is configured such that the substrate does not substantially conduct the flow of electric current through the electrically-thin conductive layer.

A current sensor system is disclosed. A current sensor system (100; 300) for measuring an AC current, the system comprising: an electrical conductor part (101) for conducting the AC current and generating a first magnetic field; a U-shaped magnetic shield (140) partially surrounding the electrical conductor part and having a central shield part and two shield leg parts; a metal plate or layer (103) arranged at a distance (g) from the shield leg parts for allowing eddy current flow and for generating a second magnetic field; a magnetic sensor device (102) arranged between the conductor part and the metal plate or layer and between the shield leg parts, configured for measuring a magnetic field component (Bx). A three-phase current sensor system (450; 550).

This invention discloses a gesture sensing circuit with adjustable sensing distance, a range hood, and a control method. In this gesture sensing circuit, the infrared emitting circuit includes a first current regulating unit connected in series with an infrared emitting unit and a switching unit. The first current regulating unit includes at least two current regulating branches with different resistances, and each current regulating branch is connected one-to-one to the power supply voltage output terminals of the microprocessor. The microprocessor selects the current regulating branch to supply power, selects the current regulating branch connected in series with the infrared emitting unit and the switching unit, controls the conduction current of the series path, and changes the carrier signal strength of the infrared emitting unit. This invention solves the problem that the fixed detection range of existing gesture sensing circuits cannot adapt to complex user environments. It allows for flexible adjustment of the sensing distance within a larger adjustment range, meeting the actual gesture control needs of users and improving the user experience.

The present application relates to the technical field of aircraft testing, and discloses a radiation and conduction overlapping frequency band HIRF comprehensive sensitivity test device and a test method, the device comprising a reverberation chamber and a test control system, a grounding panel and a support seat are arranged in the reverberation chamber, the support seat is arranged on the grounding panel, a device under test is placed on the upper surface of the support seat, a stirrer is arranged at a corner of the reverberation chamber, and the test control system is in bidirectional communication with a signal generation and processing system, an adaptive delay compensation system, a radiation test system, a conduction test system, an optoelectronic conversion system and a measurement receiver. The present application aligns the arrival time of a radiation field and conduction interference at the device under test through the adaptive delay compensation system, reproduces the electromagnetic energy synchronous coupling effect in the HIRF environment, combines field strength closed-loop control and conduction current monitoring feedback, synchronously applies a radiation field strength and wire bundle injection current that meet standard levels, and realizes verification of the coupling mechanism of radiation-conduction comprehensive sensitivity.

The utility model discloses a low-noise high-power adjustable step-down circuit, which relates to the field of voltage conversion and comprises a current supply module, a multi-branch output module, a voltage conversion module and a control module, the multi-branch output module is used for outputting voltage and current through a plurality of branches, reducing the power consumption of a single branch and improving the output current; the output voltage adjusting module is used for changing the magnitude of the conduction current provided by the current providing module by changing circuit impedance, further adjusting the magnitude of the current of a single branch in the multi-branch output module, and finally changing the magnitude of the output voltage; compared with the prior art, the beneficial effects of the utility model are that through the design of the multi-branch output module, the input range and the loading capacity of a product are improved, and the application range is wide; by designing an output voltage adjusting module, the magnitude of output voltage can be adjusted; a reverse protection module is designed, reverse protection is achieved, no burning risk exists, and product safety is improved.

The invention discloses an on-off output circuit with contact feedback, an output method and a system, and relates to the technical field of industrial control, and the key points of the technical scheme are as follows: an output port of a processor is connected with a first port of a primary side of a relay, and is used for providing a driving signal for the closing and opening of the relay; a secondary side second port of the relay is connected with the feedback unit, serves as an input port of the feedback unit and is used for providing conduction current for the feedback unit; a first output port of the feedback unit is connected with an input port of the processor and is used for feeding back the conduction condition of the secondary side of the relay to the processor; and the processor is also used for receiving the feedback signal generated by the feedback unit and judging the fault condition of the switching value output circuit according to the level states of the driving signal and the feedback signal. The problem that a switching value output circuit provided in the prior art is insufficient in reliability is solved.

The invention relates to the technical field of electric power engineering, in particular to a high-voltage alternating-current overhead line electromagnetic radiation calculation method. The method comprises the following steps: S1, deploying electromagnetic field sensor nodes at fixed intervals along a high-voltage overhead line based on an electric field attenuation model, and dynamically coupling multi-dimensional environmental parameters to optimize the electric field attenuation model in consideration of the influence of the precision of the electric field attenuation model in a complex environment; s2, predicting the electric field intensity of any point in the space according to the input parameters by using a CNN-LSTM combined model; and S3, according to the predicted electric field intensity and the conduction current density change, calculating the conduction current density and evaluating the potential risk to the human body. By constructing an electric field attenuation model, the electric field intensity of a single wire and a multi-wire system at any point in the space can be accurately calculated. Multi-dimensional environmental parameters such as atmospheric pressure and solar radiation are introduced to optimize the electric field attenuation model, so that the precision of the model in a complex environment is improved.