471 results about "Conduction current" patented technology

The present application relates to the technical field of micro inverters, and relates to a circuit topology of a micro inverter, and a control method. One specific implementation of the method comprises: measuring the maximum power value of a photovoltaic module, and receiving a current input by the photovoltaic module; acquiring a power grid voltage value in an alternating-current power grid, determining, on the basis of the power grid voltage value and the maximum power value of the photovoltaic module, a sine wave period corresponding to an output current, and on the basis of the sine wave period, controlling on and off of a plurality of switch transistors in a resonance circuit and a voltage doubling rectifying circuit in the micro inverter, so as to respectively form a conduction current loop in the resonance circuit and form an induction current loop in the voltage doubling rectifying circuit; and transmitting the sinusoidal output current to the alternating current power grid by means of the output end of the voltage doubling rectifying circuit. The implementation implements a control strategy for first-stage power conversion of the micro inverter, improves the efficiency of the micro inverter, increases the power of the micro inverter, and reduces the cost of the micro inverter.

The invention relates to a connecting device (1) for electrically connecting at least two terminals, comprising: - at least one connecting element (2) designed for conducting current between the at least two terminals, with at least two contact areas (2a, 2b) for electrical and mechanical connection to the respective terminal, wherein the connecting element (2) comprises a metallic material (3) and a passivation layer (4) that forms at least in one fault condition and encloses the metallic material (3), and - a flux (8) that can be thermally activated by heat input due to a fault condition, which is designed to remove the passivation layer (4) in order to cut through the connecting element (2) in the molten area (2c) in the case of a fault condition that melts only the metallic material (3).

The invention relates to a seawater multi-target electric energy transmission device based on electric field coupling conduction. In electric energy transmission, r electric energy receiving parts are connected with r load targets; the electric energy transmitting part is used for providing electric energy; the transmitting end and the receiving ends of the r electric energy receiving parts form a coupling structure, and the coupling structure is arranged in seawater and forms a coupling capacitor with the seawater; the first common-mode circuit is connected with the r second common-mode circuits through a single wire, so as to establish a common potential of the electric energy transmitting part and the r electric energy receiving parts, and guide the electric energy gathered at the transmitting end in the coupling capacitor to be conducted to the r receiving ends in seawater; each electric energy receiving portion is used for obtaining electric energy from a corresponding receiving end to charge a corresponding load target. According to the invention, the feasibility of conducting current in a seawater environment to realize multi-target charging is expanded, and the realization difficulty of a wet plugging charging technology in the marine environment is effectively reduced.

The invention discloses a wear-resistant flame-retardant insulated overhead cable, which relates to the technical field of cables and comprises asbestos. A wire core for conducting current is arranged near the center of the asbestos, and a plurality of conductors for transmitting electric energy are arranged inside the asbestos. When the wear-resistant flame-retardant insulated overhead cable is arranged outdoors in a residential area, firstly one of the connecting rings is passed through the outer surface of a mounting ring, and then the cable outer sheath is driven to pass through the mounting ring and is sleeved on the outer surface of the cable, so that two telescopic tubes are both sleeved on the outer surface of the cable, and then the other connecting ring is fixed on the outer surface of the mounting ring, and then the other connecting ring can be moved to the other end of the overhead cable and fixed on the outer surface of the other mounting ring, so that the cable outer sheath is sleeved on the outer surface of the cable to protect the cable, thereby solving the problem of low wear resistance of the overhead cable for residential areas affected by the external environment in the prior art.

The invention discloses a superconducting connector for a star simulator and a superconducting cable assembly. The superconducting connector comprises a supporting seat, a connector guide seat and a clamping assembly which are fixedly connected in sequence in the length direction of the superconducting connector. A first boss and a second boss are arranged on the supporting seat in a spaced mode in the extending direction perpendicular to the length direction, a through hole is formed in each boss in the first boss and the second boss, a first guide hole and a second guide hole are formed in the connector guide seat in a spaced mode, and the clamping assembly comprises a first sleeve and a second sleeve which are arranged in the extending direction in a spaced mode. According to the superconducting connector, when the first superconducting cable and the second superconducting cable are electrically connected, the first cable connecting part and the second superconducting cable connecting part are jointly limited by the supporting seat, the guide seat and the clamping assembly, so that the risks of deviation, hinging and disconnection of the connecting position of the first superconducting cable and the second superconducting cable are reduced; therefore, current can be stably conducted between the first superconducting cable and the second superconducting cable.

The invention relates to power semiconductor device on-line monitoring and power electronic system control, in particular to a SiC MOSFET conduction current extraction circuit and method, high-frequency oscillation interference is effectively suppressed through a second-order passive RC filter circuit, a measurement error less than or equal to 1.5% is realized within a current range of 50A-300A in combination with an accurate mathematical model established by a depth symbol optimization algorithm, and the measurement accuracy is improved. The requirement of the intelligent gate driver on high-precision current feedback is met, and the measurement precision is remarkably improved; the pulse width direct analysis technology is adopted, a traditional active integrator and a digital decoding link are omitted, the system response delay is smaller than or equal to 500 ns, microsecond-level over-current protection can be supported, the response speed and the real-time performance are optimized, and the system safety in a high-frequency application scene is remarkably improved.

The invention discloses a GIL electromagnetic property detection method and system based on field circuit-mechanical coupling, and the method comprises the steps: building an electromagnetic field-circuit-mechanical coupling mathematical model based on a circuit mathematical model through employing a stiffness matrix of a magnetic vector position, a stiffness matrix of a conductor eddy current, and a load matrix of a conductor conduction current; engineering sections are divided, a finite element two-dimensional simulation model is built, an equivalent external circuit is built, coupling connection is conducted through an external circuit port voltage matrix, and an electromagnetic property detection model of the GIL is obtained; performing iterative solution to obtain transient electromagnetic response of each engineering section, wherein the transient electromagnetic response comprises magnetic flux density, current density and node transient electromagnetic force; detecting whether electromagnetic response abnormity exists in the actual operation process of the GIL or not; and simulating the electromagnetic stress of the GIL component in the abnormal engineering section in the three-dimensional structure field by adopting harmonic response analysis, and checking the electromagnetic and mechanical characteristics of the GIL. According to the method, the electromagnetic characteristics of the GIL can be simulated more accurately, the applicability is wide, the operation speed is high, and guarantee is provided for GIL short-circuit fault monitoring and safe and stable operation.

The invention provides a power device with improved short-circuit current capability and a manufacturing method thereof. The power device comprises at least one cell. The cell is divided into two half cells along the width direction of the cell. Each half cell comprises a drift region, a source doped region and a source metal connected with the source doped region. The source doped region includes a source region and a plurality of contact regions. The source region comprises at least one first extension region, the plurality of contact regions are arranged in the length direction of the cell, and any two adjacent contact regions are spaced by the first extension region. And configuring the connection state of the source metal and the source doped region to be local connection of the source metal of at least one half-cell and at least one first extension region. According to the power device, the on-resistance is increased by prolonging the path of current flowing through the source region, and the short-circuit current capability is improved. The gate structures of part of the cells of the power device are adjusted, so that the short-circuit current capability and the conduction current capability of the device are further balanced. The manufacturing method is simple in steps.

The invention discloses a power supply control method, a power supply control circuit and electronic equipment. The power supply control method comprises the following steps: acquiring a conduction current instantaneous value in a voltage conversion circuit; carrying out integration processing on the conduction current instantaneous value to obtain a charge integration quantity; converting the pulse reference signal into a target charge quantity; subtracting the charge integral quantity from the target charge quantity to obtain a charge error value; respectively adjusting a preset proportionality coefficient and a preset integral coefficient in response to the level amplitude change of the pulse reference signal to obtain a proportionality adjustment coefficient and an integral adjustment coefficient; and performing proportional-integral adjustment on the charge error value by using the proportional adjustment coefficient and the integral adjustment coefficient to obtain a driving control signal, and sending the driving control signal to a voltage conversion circuit so as to adjust the output current of the voltage conversion circuit. Through the mode, the power supply control method can effectively reduce the rising time and the falling time of the output current, and realizes quick response in a full-load range.

The invention relates to the technical field of thunder and lightning measurement, and discloses a device and a method for measuring conduction current of a suspension conductor before breakdown, and the device comprises a high-voltage flat plate, a grounding flat plate, an insulating support table, an openable metal shielding box, a current sensor and a first rod electrode, an insulating support column is arranged in the middle of the insulating support table, a current sensor is installed on the outer wall of the top of the insulating support column, an adjusting screw hole is formed in the middle of the upper surface of the top of the openable metal shielding box, the adjusting screw hole is in threaded connection with an insulating screw sleeve, and a first rod electrode is inserted into the insulating screw sleeve. According to the invention, the height difference between the rod electrode and the high-voltage flat plate is adjusted by using the adjustable threaded sleeve, the breakdown current is measured in the combined gap breakdown process, the conduction current caused by charge migration on the suspended conductor is obtained in the pilot-streamer plasma stage before the arc appears, and the smaller conduction current is effectively collected.

The invention provides a planar silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a manufacturing method thereof. The planar silicon carbide MOSFET device structurally comprises an N + substrate, an N-drift region, a P-well region with a buried layer, an N + source region, a P + source region, a current expansion layer, P-type polycrystalline silicon, a gate medium, an insulating medium, N-type polycrystalline silicon, a gate electrode, a source electrode and a drain electrode. A P-type buried layer connected with a source potential and P-type polycrystalline silicon are introduced on the basis of a traditional planar MOSFET, low third quadrant conduction voltage drop is realized through a silicon-silicon carbide heterojunction, and the saturation conduction current of the device is reduced and the short-circuit tolerance time is prolonged through an introduced JFET region. In addition, because the device adopts the split gate and comprises the P-type buried layer, the overlapping area of the gate and the drain is reduced, the Cgd of the device is reduced, and the switching speed of the device is improved.

The invention discloses a Si / SiC hybrid parallel device driving circuit with a variable switching time sequence. The Si / SiC hybrid parallel device driving circuit comprises a time sequence switching signal generating circuit, a time delay switch and time sequence switching circuit and a push-pull output circuit. A driving signal is sent by a main control chip, two different driving signals are respectively generated through calculation of a time delay circuit and a plurality of logic gates, and a conventional driving time sequence of normal switching on and off of a SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor), delayed switching-on of a Si IGBT (Insulated Gate Bipolar Transistor) and switching-off in advance can be adapted. And meanwhile, a timing sequence switching signal generation circuit detects and compares the conduction current of the SiC MOSFET so as to generate a timing sequence switching signal. And when the conduction current of the SiC MOSFET is in different regions, switching the switching time sequence of the Si / SiC hybrid parallel device. According to the invention, within the whole operation range of the Si / SiC hybrid parallel device, the lowest switching loss and conduction loss are ensured, and the reliability of the SiC MOSFET is greatly improved.

The present application relates to a hybrid dimming method and apparatus for an LED, and a computer readable storage medium. The hybrid dimming method for an LED comprises the following steps: S1, receiving display grayscale data of a current frame, and determining high-grayscale data and low-grayscale data; S2, when the high-grayscale data is 0, maintaining an LED conduction current at a lowest-gear current, and adjusting a PWM duty cycle by means of the low-grayscale data to adjust the brightness of the LED; and S3, when the high-grayscale data is greater than 0, maintaining the PWM duty cycle at a maximum value 1, determining two adjacent gears of the LED conduction current by means of the high-grayscale data, and adjusting the times for back-and-forth switching of the LED conduction current between the two adjacent gears by means of the low-grayscale data. The hybrid dimming method and apparatus for an LED of the present application can achieve linear grayscale adjustment under hybrid dimming.

A nuclear magnetic resonance coil and method of using a magnetic resonance coil, the coil configured to, in a first mode, receive at a drive port and conduct a current for generating a static magnetic field in a space adjacent to the coil and, in a second mode, receive and output to a receive port a nuclear magnetic resonance signal generated in said space.

The invention relates to a field effect transistor and a preparation method thereof, and the field effect transistor comprises an insulating substrate, a two-dimensional material Bi2O2Se channel layer which grows on the insulating substrate in situ, a first electrode and a second electrode which are arranged on the two-dimensional material Bi2O2Se channel layer, a two-dimensional material MoO3 layer which is arranged on the two-dimensional material Bi2O2Se channel layer, and a third electrode which is arranged on the two-dimensional material MoO3 layer, the two-dimensional material MoO3 layer completely covers the two-dimensional material Bi2O2Se channel layer; the width of a depletion region of the Bi2O2Se channel layer is controlled through voltage applied to the MoO3 layer, so that the switching function of the transistor is achieved, a good sub-threshold characteristic is obtained, meanwhile, due to the high carrier mobility characteristic of the two-dimensional Bi2O2Se material, a remarkable electrical response can be obtained only by applying small source and drain voltage, and the performance of the transistor is improved. And excellent sub-threshold characteristics and conduction current performance are presented.

The invention discloses a drive control method and system for a Si / SiC hybrid device, and relates to the technical field of semiconductors, and the method comprises the steps: obtaining the conduction current of the Si / SiC hybrid device; a current interval where the conduction current is located is determined, one current interval corresponds to one driving mode, and the driving modes include only driving the Si IGBT device, only driving the SiC MOSFET device and driving the Si IGBT device or the SiC MOSFET device for different times in one switching period; and driving the Si / SiC hybrid device according to the driving mode of the current interval where the conduction current is located. According to the invention, the dynamic adjustment of the driving control mode is realized, the driving flexibility of the Si / SiC hybrid device is improved, the switching efficiency of the Si / SiC hybrid device switch is also improved, the loss of the Si / SiC hybrid device is reduced, and the compromise optimization operation of the thermal reliability and the electromagnetic compatibility is realized.

A new inverting logic gate or a FET gate driver is disclosed. The logic gate mitigates the trade-off between power dissipation (or quiescent power) and slew rate of the typical RTL and DLL buffers by using an innovative circuit topology involving a pull-up bootstrapping transistor. The bootstrapping transistor may be an enhancement mode GaN field effect transistor (FET). This bootstrapping transistor may be driven by the complement of the input signal. Alternatively, the bootstrapping transistor may monitor the drain terminal of the pull-down transistor and conduct current accordingly. Other Boolean functions may also be achieved using this approach.

An integrated circuit (IC) may include a pillar bar disposed in a bar area over a row of transistors to conduct a current through the transistors and to conduct heat away from the transistors. The pillar bar includes a top metal layer, a bottom metal layer coupled to a terminal of each of the transistors in the row, and at least one intermediate layer between the top metal layer and the bottom metal layer. When heated by the transistors, the metal in the pillar bar expands at a different rate than the IC substrate, causing heat-related stress that may damage the IC. In a pillar bar disclosed herein, one of the intermediate layers includes separate metal regions separated by a non-metal material in the bar area. The pillar bar includes a central metal region and separate metal regions between the central metal region and the ends of the pillar bar.

A comparator circuit with dynamic hysteresis. A common source branch is configured to conduct a differential current at first and second intermediate outputs responsive to a differential input at first and second inputs, and a common gate branch is configured to generate a voltage at a third intermediate output responsive to the differential current at the first and second intermediate outputs. A hysteresis branch includes a hysteresis current generator including first and second replica transistors having source / drain paths coupled in parallel, and gates coupled to the first and second inputs, respectively. A hysteresis capacitor is coupled between the sources of the first and second replica transistors and the common terminal. Current mirror circuitry is coupled to the source / drain paths of the first and second replica transistors, to supply a hysteresis current responsive to the absence of current conducted by the parallel first and second replica transistors.

The invention provides a bias protection and pulse width equalization control method and system for a vehicle power supply module, and relates to the technical field of module control, and the method comprises the steps: obtaining an input voltage and an output current signal, and calculating an instantaneous power value and an output power value; calculating the inductance value of the transformer to judge the magnetic biasing state; collecting a switch tube conduction current waveform, calculating a time difference value, generating a compensation parameter, and adjusting the actual conduction time; dividing the output power into a plurality of power intervals, setting duty ratio calculation parameters, and generating pulse width signals with different duty ratios to control a switching tube; and the output power value is monitored in real time to realize overload protection. The problem of magnetic bias of the transformer is solved, switching loss is reduced, and reliability of the power supply module is improved.

A wide current-and-voltage-range, precision supply circuit to conduct current (pulsed or continuous) having precisely-controlled current levels through a load is described. The supply circuit includes selectable current-sensing resistors in a feedback loop that controls current output to accommodate a wide range of currents provided to the load. The circuit can include a programmable output voltage that is applied to the load. The circuit can provide sensed voltage information from a single sensing node in the supply circuit to enable protection of the load and of power transistor(s) that conduct current through the load.

To provide a surgical system causing a result effective to biological tissues.SOLUTION: An apparatus and associated method relate to controlling electrical power of an electrotherapeutic signal that is provided to a biological tissue engaged by an electrosurgical instrument during a medical procedure. Electrical power, a product of a voltage difference across and an electrical current conducted by the engaged biological tissue, is controlled according to a therapeutic schedule. The electrotherapeutic schedule can be reduced or terminated in response to a termination criterion being met. In some examples, the termination criterion is a current characteristic, such as a decrease in current conducted by the engaged biological tissue. In some examples, the termination criterion is a biological tissue resistance characteristic, such as an increase in the biological tissue resistance that exceeds a predetermined delta resistance value.SELECTED DRAWING: Figure 1

An apparatus is provided that includes a NAND string including a first memory cell coupled to a first word line, and a control circuit coupled to the NAND string. The control circuit is configured to apply a verify voltage to the first word line, perform a verify test on the first memory cell to sense a hole conduction current, and perform a program operation on the first memory cell without performing a pre-charge operation.

The present invention discloses an online thyristor junction temperature detection system and method. The system comprises a main circuit unit connected to the thyristor and configured to provide the thyristor with a DC bus voltage and conduction current; a drive unit connected to the thyristor and configured to control the conduction process of the thyristor; a temperature control unit configured to regulate the ambient temperature of the thyristor during junction temperature calibration and actual operation; a sampling unit connected to the main circuit unit and the temperature control unit; and a junction temperature detection unit storing a database and a function model, connected to the sampling unit, the drive unit, and the thyristor. The sampling unit collects the thyristor's DC bus voltage, thyristor conduction current, and drive current, while the junction temperature detection unit collects the thyristor's gate voltage. The thyristor's operating junction temperature is obtained by inverse calculation using the above parameters by querying the database or the function model. The present invention can detect the thyristor's operating junction temperature in real time with high accuracy and resolution.

The disclosure relates to a method for mapping an input vector to an output vector by means of a matrix circuit which has memory cells arranged in a matrix in a plurality of rows and a plurality of columns and first, second and third lines, each memory cell having an adjustable memory state, is connected to the first line (22) of the corresponding row, is connected to the second and third lines of the corresponding column and is set up to generate an electrical current (I1, I2, I3) depending on the memory state and voltages applied to the first, second and third lines, is connected to the second and third lines of the corresponding column and is arranged to conduct an electric current (I1, I2, I3) into the third line (26) as a function of the memory state and voltages applied to the first, second and third lines, each memory cell having a semiconductor switching element (28) with a control terminal which is connected to the second line (24) of the corresponding column; wherein input voltages (U1, U2, U3) corresponding to components of the input vector are applied (110) to the first lines; wherein for each column: a ramp voltage (V1, V2, V3) is applied (120) to the second line assigned to the column, the level of which is increased with time (130); a total current is detected at the third line assigned to the column and a time period elapsed since a start time of the level increase of the corresponding ramp voltage is determined (150) until the magnitude of the total current reaches a certain current magnitude threshold (Ig) (140); and a component of the output vector corresponding to the column is determined (170) based on the elapsed time period (t1, t2, t3).

The invention relates to a silicon carbide multi-channel longitudinal groove type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a manufacturing method thereof, and belongs to the technical field of silicon carbide semiconductors. The device comprises a substrate, a drift region arranged on the substrate and a plurality of grooves arranged in the drift region, wherein the plurality of grooves are periodically arranged along the transverse direction; the groove extends along a direction vertical to the surface of the substrate; gate oxide layers and gates located on the gate oxide layers are arranged on the two sides in the trenches respectively, channel regions are formed between the adjacent trenches and at the bottoms of the trenches in the drift region, source regions and body contact regions are formed in the channel regions, intermetallic dielectric layers are formed between the surfaces of the gates and the source regions, top-layer source metal is formed on the source regions, and bottom-layer source metal is formed on the body contact regions. And an ohmic contact layer is formed between the source electrode region and the top layer source electrode metal. According to the device disclosed by the invention, the inverted conduction channels are simultaneously formed in the side walls and the bottoms of the grooves, so that conduction current flows in parallel in the longitudinal and transverse directions, and the number of the effective conduction channels is remarkably increased.

The subject matter of the invention is impedance-based navigation of sheaths. A sheath having a conductive region that provides a low impedance path through a sheath wall is shown. When the impedance-based tracking electrode is adjacent the conductive region, the conductive region is configured to conduct electrical current between the impedance-based tracking electrode of the endoluminal catheter and the body patch electrode of the impedance-based tracking system. The impedance-based tracking system is configured to determine a location of the conductive region based on a ratio of currents at the body patch electrodes, and thereby determine a location of the distal end of the sheath. The conductive region may include a flushing hole such that brine acts as an electrical conduit for the conductive region. In addition to or alternatively, the conductive region may include a conductive material configured to act as an electrical conduit through the sheath wall.

The present disclosure relates to a power module designed to have balanced current flow for each parallel power switch such that each power switch has a similar current path length. The power module can include a first plurality of power switches electrically coupled to a first region and a second plurality of power switches electrically coupled to a second region. A first plurality of conductive clips is configured to conduct a first plurality of currents and a second plurality of conductive clips is configured to conduct a second plurality of currents. The power module can include a first leadframe configured to apply a positive voltage to the first region, a second leadframe configured to conduct current from the second region, and a third leadframe configured to conduct current from the third region.

The embodiments of the present invention disclose a bandgap reference circuit, a reference voltage source, and a reference voltage generation method. The circuit includes a current module, a differential input module, a limit module, a feedback module, and a voltage divider module. The differential input module generates a first conduction current and a second conduction current in response to a first voltage signal and a second voltage signal of the voltage divider module, respectively, and further outputs a first output current and a second output current, respectively. The limit module outputs a drive signal in response to the first output current and the second output current to control the feedback module to adjust the first voltage signal and the second voltage signal so that the first output current and the second output current are equal, so that the differential input module outputs a reference voltage with a zero temperature coefficient. The limit module includes a matching resistor or a low transconductance switch tube to reduce the offset voltage. The present invention reduces the offset voltage of the limit module and improves the accuracy of the reference voltage by setting a matching resistor or a low transconductance switch tube in the limit module.

A signal transmission device has an initial signal stabilization mechanism and includes a driver and a bypass circuit. The driver includes: a first current source circuit coupled between a high voltage terminal and a first node; a second current source circuit coupled between a low voltage terminal and a second node; and a driving circuit coupled between the first node and the second node. The driving circuit outputs an output signal according to a first bias voltage of the first node, a second bias voltage of the second node, and an input signal during a signal output operation. The bypass circuit is coupled between the first node and the second node. In the beginning of the signal output operation, the bypass circuit conducts a current from the first node to the second node to assist in establishing the first and second bias voltages and thereby stabilize the output signal.