390 results about "Conduction current" patented technology

The invention relates to a connecting device (1) for electrically connecting at least two terminals, comprising: - at least one connecting element (2) designed for conducting current between the at least two terminals, with at least two contact areas (2a, 2b) for electrical and mechanical connection to the respective terminal, wherein the connecting element (2) comprises a metallic material (3) and a passivation layer (4) that forms at least in one fault condition and encloses the metallic material (3), and - a flux (8) that can be thermally activated by heat input due to a fault condition, which is designed to remove the passivation layer (4) in order to cut through the connecting element (2) in the molten area (2c) in the case of a fault condition that melts only the metallic material (3).

The invention discloses a superconducting connector for a star simulator and a superconducting cable assembly. The superconducting connector comprises a supporting seat, a connector guide seat and a clamping assembly which are fixedly connected in sequence in the length direction of the superconducting connector. A first boss and a second boss are arranged on the supporting seat in a spaced mode in the extending direction perpendicular to the length direction, a through hole is formed in each boss in the first boss and the second boss, a first guide hole and a second guide hole are formed in the connector guide seat in a spaced mode, and the clamping assembly comprises a first sleeve and a second sleeve which are arranged in the extending direction in a spaced mode. According to the superconducting connector, when the first superconducting cable and the second superconducting cable are electrically connected, the first cable connecting part and the second superconducting cable connecting part are jointly limited by the supporting seat, the guide seat and the clamping assembly, so that the risks of deviation, hinging and disconnection of the connecting position of the first superconducting cable and the second superconducting cable are reduced; therefore, current can be stably conducted between the first superconducting cable and the second superconducting cable.

The invention relates to power semiconductor device on-line monitoring and power electronic system control, in particular to a SiC MOSFET conduction current extraction circuit and method, high-frequency oscillation interference is effectively suppressed through a second-order passive RC filter circuit, a measurement error less than or equal to 1.5% is realized within a current range of 50A-300A in combination with an accurate mathematical model established by a depth symbol optimization algorithm, and the measurement accuracy is improved. The requirement of the intelligent gate driver on high-precision current feedback is met, and the measurement precision is remarkably improved; the pulse width direct analysis technology is adopted, a traditional active integrator and a digital decoding link are omitted, the system response delay is smaller than or equal to 500 ns, microsecond-level over-current protection can be supported, the response speed and the real-time performance are optimized, and the system safety in a high-frequency application scene is remarkably improved.

The invention discloses a GIL electromagnetic property detection method and system based on field circuit-mechanical coupling, and the method comprises the steps: building an electromagnetic field-circuit-mechanical coupling mathematical model based on a circuit mathematical model through employing a stiffness matrix of a magnetic vector position, a stiffness matrix of a conductor eddy current, and a load matrix of a conductor conduction current; engineering sections are divided, a finite element two-dimensional simulation model is built, an equivalent external circuit is built, coupling connection is conducted through an external circuit port voltage matrix, and an electromagnetic property detection model of the GIL is obtained; performing iterative solution to obtain transient electromagnetic response of each engineering section, wherein the transient electromagnetic response comprises magnetic flux density, current density and node transient electromagnetic force; detecting whether electromagnetic response abnormity exists in the actual operation process of the GIL or not; and simulating the electromagnetic stress of the GIL component in the abnormal engineering section in the three-dimensional structure field by adopting harmonic response analysis, and checking the electromagnetic and mechanical characteristics of the GIL. According to the method, the electromagnetic characteristics of the GIL can be simulated more accurately, the applicability is wide, the operation speed is high, and guarantee is provided for GIL short-circuit fault monitoring and safe and stable operation.

The invention discloses a power supply control method, a power supply control circuit and electronic equipment. The power supply control method comprises the following steps: acquiring a conduction current instantaneous value in a voltage conversion circuit; carrying out integration processing on the conduction current instantaneous value to obtain a charge integration quantity; converting the pulse reference signal into a target charge quantity; subtracting the charge integral quantity from the target charge quantity to obtain a charge error value; respectively adjusting a preset proportionality coefficient and a preset integral coefficient in response to the level amplitude change of the pulse reference signal to obtain a proportionality adjustment coefficient and an integral adjustment coefficient; and performing proportional-integral adjustment on the charge error value by using the proportional adjustment coefficient and the integral adjustment coefficient to obtain a driving control signal, and sending the driving control signal to a voltage conversion circuit so as to adjust the output current of the voltage conversion circuit. Through the mode, the power supply control method can effectively reduce the rising time and the falling time of the output current, and realizes quick response in a full-load range.

The invention relates to the technical field of thunder and lightning measurement, and discloses a device and a method for measuring conduction current of a suspension conductor before breakdown, and the device comprises a high-voltage flat plate, a grounding flat plate, an insulating support table, an openable metal shielding box, a current sensor and a first rod electrode, an insulating support column is arranged in the middle of the insulating support table, a current sensor is installed on the outer wall of the top of the insulating support column, an adjusting screw hole is formed in the middle of the upper surface of the top of the openable metal shielding box, the adjusting screw hole is in threaded connection with an insulating screw sleeve, and a first rod electrode is inserted into the insulating screw sleeve. According to the invention, the height difference between the rod electrode and the high-voltage flat plate is adjusted by using the adjustable threaded sleeve, the breakdown current is measured in the combined gap breakdown process, the conduction current caused by charge migration on the suspended conductor is obtained in the pilot-streamer plasma stage before the arc appears, and the smaller conduction current is effectively collected.

The invention discloses a Si / SiC hybrid parallel device driving circuit with a variable switching time sequence. The Si / SiC hybrid parallel device driving circuit comprises a time sequence switching signal generating circuit, a time delay switch and time sequence switching circuit and a push-pull output circuit. A driving signal is sent by a main control chip, two different driving signals are respectively generated through calculation of a time delay circuit and a plurality of logic gates, and a conventional driving time sequence of normal switching on and off of a SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor), delayed switching-on of a Si IGBT (Insulated Gate Bipolar Transistor) and switching-off in advance can be adapted. And meanwhile, a timing sequence switching signal generation circuit detects and compares the conduction current of the SiC MOSFET so as to generate a timing sequence switching signal. And when the conduction current of the SiC MOSFET is in different regions, switching the switching time sequence of the Si / SiC hybrid parallel device. According to the invention, within the whole operation range of the Si / SiC hybrid parallel device, the lowest switching loss and conduction loss are ensured, and the reliability of the SiC MOSFET is greatly improved.

A nuclear magnetic resonance coil and method of using a magnetic resonance coil, the coil configured to, in a first mode, receive at a drive port and conduct a current for generating a static magnetic field in a space adjacent to the coil and, in a second mode, receive and output to a receive port a nuclear magnetic resonance signal generated in said space.

The invention relates to a field effect transistor and a preparation method thereof, and the field effect transistor comprises an insulating substrate, a two-dimensional material Bi2O2Se channel layer which grows on the insulating substrate in situ, a first electrode and a second electrode which are arranged on the two-dimensional material Bi2O2Se channel layer, a two-dimensional material MoO3 layer which is arranged on the two-dimensional material Bi2O2Se channel layer, and a third electrode which is arranged on the two-dimensional material MoO3 layer, the two-dimensional material MoO3 layer completely covers the two-dimensional material Bi2O2Se channel layer; the width of a depletion region of the Bi2O2Se channel layer is controlled through voltage applied to the MoO3 layer, so that the switching function of the transistor is achieved, a good sub-threshold characteristic is obtained, meanwhile, due to the high carrier mobility characteristic of the two-dimensional Bi2O2Se material, a remarkable electrical response can be obtained only by applying small source and drain voltage, and the performance of the transistor is improved. And excellent sub-threshold characteristics and conduction current performance are presented.

A new inverting logic gate or a FET gate driver is disclosed. The logic gate mitigates the trade-off between power dissipation (or quiescent power) and slew rate of the typical RTL and DLL buffers by using an innovative circuit topology involving a pull-up bootstrapping transistor. The bootstrapping transistor may be an enhancement mode GaN field effect transistor (FET). This bootstrapping transistor may be driven by the complement of the input signal. Alternatively, the bootstrapping transistor may monitor the drain terminal of the pull-down transistor and conduct current accordingly. Other Boolean functions may also be achieved using this approach.

An integrated circuit (IC) may include a pillar bar disposed in a bar area over a row of transistors to conduct a current through the transistors and to conduct heat away from the transistors. The pillar bar includes a top metal layer, a bottom metal layer coupled to a terminal of each of the transistors in the row, and at least one intermediate layer between the top metal layer and the bottom metal layer. When heated by the transistors, the metal in the pillar bar expands at a different rate than the IC substrate, causing heat-related stress that may damage the IC. In a pillar bar disclosed herein, one of the intermediate layers includes separate metal regions separated by a non-metal material in the bar area. The pillar bar includes a central metal region and separate metal regions between the central metal region and the ends of the pillar bar.

The invention provides a bias protection and pulse width equalization control method and system for a vehicle power supply module, and relates to the technical field of module control, and the method comprises the steps: obtaining an input voltage and an output current signal, and calculating an instantaneous power value and an output power value; calculating the inductance value of the transformer to judge the magnetic biasing state; collecting a switch tube conduction current waveform, calculating a time difference value, generating a compensation parameter, and adjusting the actual conduction time; dividing the output power into a plurality of power intervals, setting duty ratio calculation parameters, and generating pulse width signals with different duty ratios to control a switching tube; and the output power value is monitored in real time to realize overload protection. The problem of magnetic bias of the transformer is solved, switching loss is reduced, and reliability of the power supply module is improved.

To provide a surgical system causing a result effective to biological tissues.SOLUTION: An apparatus and associated method relate to controlling electrical power of an electrotherapeutic signal that is provided to a biological tissue engaged by an electrosurgical instrument during a medical procedure. Electrical power, a product of a voltage difference across and an electrical current conducted by the engaged biological tissue, is controlled according to a therapeutic schedule. The electrotherapeutic schedule can be reduced or terminated in response to a termination criterion being met. In some examples, the termination criterion is a current characteristic, such as a decrease in current conducted by the engaged biological tissue. In some examples, the termination criterion is a biological tissue resistance characteristic, such as an increase in the biological tissue resistance that exceeds a predetermined delta resistance value.SELECTED DRAWING: Figure 1

An apparatus is provided that includes a NAND string including a first memory cell coupled to a first word line, and a control circuit coupled to the NAND string. The control circuit is configured to apply a verify voltage to the first word line, perform a verify test on the first memory cell to sense a hole conduction current, and perform a program operation on the first memory cell without performing a pre-charge operation.

The present invention discloses an online thyristor junction temperature detection system and method. The system comprises a main circuit unit connected to the thyristor and configured to provide the thyristor with a DC bus voltage and conduction current; a drive unit connected to the thyristor and configured to control the conduction process of the thyristor; a temperature control unit configured to regulate the ambient temperature of the thyristor during junction temperature calibration and actual operation; a sampling unit connected to the main circuit unit and the temperature control unit; and a junction temperature detection unit storing a database and a function model, connected to the sampling unit, the drive unit, and the thyristor. The sampling unit collects the thyristor's DC bus voltage, thyristor conduction current, and drive current, while the junction temperature detection unit collects the thyristor's gate voltage. The thyristor's operating junction temperature is obtained by inverse calculation using the above parameters by querying the database or the function model. The present invention can detect the thyristor's operating junction temperature in real time with high accuracy and resolution.

The disclosure relates to a method for mapping an input vector to an output vector by means of a matrix circuit which has memory cells arranged in a matrix in a plurality of rows and a plurality of columns and first, second and third lines, each memory cell having an adjustable memory state, is connected to the first line (22) of the corresponding row, is connected to the second and third lines of the corresponding column and is set up to generate an electrical current (I1, I2, I3) depending on the memory state and voltages applied to the first, second and third lines, is connected to the second and third lines of the corresponding column and is arranged to conduct an electric current (I1, I2, I3) into the third line (26) as a function of the memory state and voltages applied to the first, second and third lines, each memory cell having a semiconductor switching element (28) with a control terminal which is connected to the second line (24) of the corresponding column; wherein input voltages (U1, U2, U3) corresponding to components of the input vector are applied (110) to the first lines; wherein for each column: a ramp voltage (V1, V2, V3) is applied (120) to the second line assigned to the column, the level of which is increased with time (130); a total current is detected at the third line assigned to the column and a time period elapsed since a start time of the level increase of the corresponding ramp voltage is determined (150) until the magnitude of the total current reaches a certain current magnitude threshold (Ig) (140); and a component of the output vector corresponding to the column is determined (170) based on the elapsed time period (t1, t2, t3).

The invention relates to a silicon carbide multi-channel longitudinal groove type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a manufacturing method thereof, and belongs to the technical field of silicon carbide semiconductors. The device comprises a substrate, a drift region arranged on the substrate and a plurality of grooves arranged in the drift region, wherein the plurality of grooves are periodically arranged along the transverse direction; the groove extends along a direction vertical to the surface of the substrate; gate oxide layers and gates located on the gate oxide layers are arranged on the two sides in the trenches respectively, channel regions are formed between the adjacent trenches and at the bottoms of the trenches in the drift region, source regions and body contact regions are formed in the channel regions, intermetallic dielectric layers are formed between the surfaces of the gates and the source regions, top-layer source metal is formed on the source regions, and bottom-layer source metal is formed on the body contact regions. And an ohmic contact layer is formed between the source electrode region and the top layer source electrode metal. According to the device disclosed by the invention, the inverted conduction channels are simultaneously formed in the side walls and the bottoms of the grooves, so that conduction current flows in parallel in the longitudinal and transverse directions, and the number of the effective conduction channels is remarkably increased.

The present disclosure relates to a power module designed to have balanced current flow for each parallel power switch such that each power switch has a similar current path length. The power module can include a first plurality of power switches electrically coupled to a first region and a second plurality of power switches electrically coupled to a second region. A first plurality of conductive clips is configured to conduct a first plurality of currents and a second plurality of conductive clips is configured to conduct a second plurality of currents. The power module can include a first leadframe configured to apply a positive voltage to the first region, a second leadframe configured to conduct current from the second region, and a third leadframe configured to conduct current from the third region.

The embodiments of the present invention disclose a bandgap reference circuit, a reference voltage source, and a reference voltage generation method. The circuit includes a current module, a differential input module, a limit module, a feedback module, and a voltage divider module. The differential input module generates a first conduction current and a second conduction current in response to a first voltage signal and a second voltage signal of the voltage divider module, respectively, and further outputs a first output current and a second output current, respectively. The limit module outputs a drive signal in response to the first output current and the second output current to control the feedback module to adjust the first voltage signal and the second voltage signal so that the first output current and the second output current are equal, so that the differential input module outputs a reference voltage with a zero temperature coefficient. The limit module includes a matching resistor or a low transconductance switch tube to reduce the offset voltage. The present invention reduces the offset voltage of the limit module and improves the accuracy of the reference voltage by setting a matching resistor or a low transconductance switch tube in the limit module.

A signal transmission device has an initial signal stabilization mechanism and includes a driver and a bypass circuit. The driver includes: a first current source circuit coupled between a high voltage terminal and a first node; a second current source circuit coupled between a low voltage terminal and a second node; and a driving circuit coupled between the first node and the second node. The driving circuit outputs an output signal according to a first bias voltage of the first node, a second bias voltage of the second node, and an input signal during a signal output operation. The bypass circuit is coupled between the first node and the second node. In the beginning of the signal output operation, the bypass circuit conducts a current from the first node to the second node to assist in establishing the first and second bias voltages and thereby stabilize the output signal.

The invention relates to the related technical field of lead conduction current control, in particular to an overhead line connection device control method and system, an intelligent terminal and a storage medium, and the method comprises the steps: obtaining the dynamic contact parameters of an overhead line connection point, triggering a contact pressure correction instruction through a fuzzy self-adaptive PID control unit, and adjusting the parameters of a clamping mechanism; meanwhile, environment interference data are collected, a compensation coefficient is generated in combination with the operation parameters, and the coordination action parameters are continuously adjusted until the contact stability verification is passed. The technical problem that the contact stability of the overhead line connection point is affected by uneven contact pressure distribution of the overhead line connection point due to interference of environmental interference factors is solved, a contact pressure correction instruction is adjusted in real time through the fuzzy self-adaptive PID control unit, and the contact stability of the overhead line connection point is improved in combination with a contact pressure compensation coefficient. And cooperative action parameters of the buffer mechanism and the clamping mechanism of the guiding and connecting device are continuously adjusted, so that the technical effect of effectively improving the contact stability of the overhead line connecting point is achieved.

The invention relates to a power device failure detection method. The method comprises the following steps: acquiring a shell temperature, a forward conduction voltage drop and a forward conduction current of a power device in real time; and when the shell temperature, the forward conduction voltage drop and the forward conduction current meet preset conditions, determining that the power device fails. According to the power device failure detection method, the failure of the power device can be detected online in real time, the detection process is simple, and due to the fact that various parameters are combined for fusion and comparison, the accuracy is higher.

The material of this design is metal. This design is a probe pin, used to connect electrodes, terminals, pads, etc., of the object under test to a circuit, and to inspect electronic components such as semiconductor devices, semiconductor packages, integrated circuits, and printed circuit boards. This design improves the stability of contact with the ends of the IC by forming a crown-shaped contact terminal on the top. In this design, the electrical signal during inspection flows from the upper probe connected to the circuit board and IC, through the lower probe, to the object. At maximum compression, the upper and lower probes directly contact the IC and circuit board simultaneously to conduct current. The main feature of this design is the shape of the "integrated circuit inspection probe pin". 1.1) Perspective view; 1.2) Front view; 1.3) Rear view; 1.4) Left side view; 1.5) Right side view; 1.6) Top view; 1.7) Bottom view; 1.8) Reference drawing

The embodiment of the invention discloses a band-gap reference circuit, a reference voltage source and a reference voltage generation method, and the circuit comprises a current module, a differential input module, a limiting module, a feedback module and a voltage division module, the differential input module responds to a first voltage signal and a second voltage signal of the voltage division module to generate a first conduction current and a second conduction current respectively, and then outputs a first output current and a second output current respectively; and the limiting module responds to the first output current and the second output current, and outputs a driving signal to control the feedback module to adjust the first voltage signal and the second voltage signal, so that the first output current is equal to the second output current, and the differential input module outputs the reference voltage with the zero temperature coefficient. The limiting module comprises a matching resistor or a low-transconductance switch tube so as to reduce the offset voltage. The matching resistor or the low-transconductance switch tube is arranged in the limiting module, so that the offset voltage of the limiting module is reduced, and the accuracy of the reference voltage is improved.

This invention provides a bidirectional transient voltage suppressor with low dynamic resistance and high surge capability, comprising: a heavily doped semiconductor substrate of a first conductivity type; a first epitaxial layer disposed on the substrate; a conduction modulation buried layer disposed on the first epitaxial layer; a second epitaxial layer disposed on the conduction modulation buried layer; a heavily doped first conductivity type region disposed on the second epitaxial layer; a first electrode disposed on the front side of the heavily doped first conductivity type region and a second electrode disposed on the back side of the substrate; the conduction modulation buried layer is disposed inside the double epitaxial body region and is configured to form a high-concentration conductivity modulation region of charge carriers under transient high current impact conditions, forming a body region-dominated conduction path between the first epitaxial layer and the second epitaxial layer, so that the conduction current changes from concentrated conduction in the PN junction region to a laterally extended and planar distributed overall conduction mode within the body region, thereby reducing the dynamic resistance of the device and improving the surge carrying capacity of the device.

A semiconductor device includes a substrate, drift, source, gate and base regions, and a drain portion. The substrate is doped with a first dopant type. The drift region is disposed above the semiconductor substrate, and is doped with the first dopant type at a lower concentration. The source region is doped with the first dopant type. The gate region is disposed above the drift region and part of the source region. The base region is disposed between the source and drift regions. The base region includes a first trench extending in a first direction, and a second trench extending in a second direction and intersecting the first trench. The trenches extend into a top surface of the base region. Each trench has at least a vertical wall and at least a horizontal wall. The base region conduct current on the vertical and horizontal walls of the trenches.

A method and device for cavitation-plasma treatment of liquid is disclosed. The device has an elongated body housing that encloses a working chamber having a plasma discharge body, with a cavitation body after the working chamber. The working chamber is a cylindrical channel having a confusor at its inlet and a diffuser at its outlet. The plasma discharge body has an inlet electrode disposed in the inlet of the working chamber with a discharge end extending through the confusor into the cylindrical channel, as well as an outlet electrode disposed in the outlet with a charge end extending through the diffuser into the cylindrical channel. The inlet electrode and outlet electrode conduct an electrical current through the working chamber in such a way as to generate a plasma by applying high- voltage direct or alternating current to the liquid flow.

The invention relates to a circuit breaker device for a low-voltage AC circuit fault-current protection function which complies with standards, wherein - when the level of a fault current exceeds specific trigger current time values, which form a trigger curve, a process of preventing a current flow is initiated, - a standard for fault current / differential current circuit breakers specifies a) current time limit values for the triggering process (AUS), so that a current flow is to be prevented in the low-voltage AC circuit, and b) current limit values for the non-triggering process (EIN), so that a current flow is to be conducted in the low-voltage AC circuit, said limit values characterizing a trigger range (AB) - the specific trigger current time values lie within the trigger range, and - for the trigger range, at least one first trigger curve (robust) and a second trigger curve (sensitive) can be selected within the trigger range so that a different trigger behavior can be selected within a standard characterized trigger range.

In an example, a Hall sensor can include an IC die formed on a lead frame that is configured to conduct a current, the IC die being configured to sense a magnetic field resulting from the current. The Hall sensor can include at least one magnetic permeability material film formed on the IC die. The Hall sensor can include at least one permalloy material layer formed on the respective at least one magnetic permeability material film, the at least one magnetic permeability material film and the at least one permalloy material layer combining to provide a magnetic concentrator providing concentration of the magnetic field.

In one example, a circuit interrupter includes a bus bar configured to conduct a current and configured to connect to an electrical grid. The circuit interrupter includes a bus bar cutter configured to sever the bus bar, a temperature compensation circuit including a resistance-temperature-coefficient (RTC) circuit configured to provide a temperature-compensated delay, and a detonator firing circuit configured to trigger the bus bar cutter in response to the temperature-compensated delay. The temperature-compensated delay is based on a voltage across a resistance temperature detector (RTD).