The invention discloses a
semiconductor chip welding method and device, and the method comprises the steps: carrying out the thermal field scanning of a multi-layer stacked
package, obtaining the overall thermal
imaging data, and generating a thermal field partition diagram containing a plurality of independent
thermal control partitions; performing pulse type
backflow heating treatment on each independent
thermal control subarea to obtain real-time temperature data; carrying out real-time
molten state detection to obtain surface
topography data and temperature distribution data; performing
atmosphere switching treatment on the independent
thermal control subareas in the cooling stage to generate
atmosphere switching subareas; performing micro-cycle steady-state detection on the
atmosphere switching subareas, and performing local reheating treatment on the abnormal atmosphere switching subareas to generate reheating subareas; and carrying out dynamic cooling treatment on the reheating subarea. According to the technical scheme provided by the invention, through combination of partitioned pulse
backflow and real-time monitoring, the
welding spot melting state in multi-layer stacked packaging is accurately controlled, and the incomplete
backflow defect is effectively prevented.