A method for treating electronic components made of
copper,
nickel or alloys thereof or with materials such as
brass or plated therewith and includes the steps of arranging the components in a treatment chamber, generating a vacuum in the treatment chamber, introducing
oxygen into the treatment chamber, providing a pressure
ranging between 10−1 and 50 mbar in the treatment chamber and exciting a
plasma in the chamber, allowing the
oxygen radicals to act on the components, generating a vacuum in the treatment chamber, introducing
hydrogen into the treatment chamber, providing a pressure
ranging between 10−1 and 50 mbar in the treatment chamber and exciting a
plasma in the chamber and allowing the
hydrogen radicals to act on the components.