671 results about "Probe card" patented technology

An object of the invention is to provide a probe card capable of properly performing a measurement. A probe card according to the invention includes: probes 100 shaped to allow vertical elastic deformation; a supporting substrate 200 with the probes provided on the lower surface thereof; a main substrate 300 positioned opposing the upper surface of the supporting substrate 200; an intermediate substrate 400 disposed between the supporting substrate 200 and main substrate 300; a supporting member 500 that is a column-shaped member with one end thereof attached to the center of the supporting substrate 200 and the other end thereof attached to the intermediate substrate 400 and holds the supporting substrate 200 so that the supporting substrate 200 is inclinable; and elastic members for holding the supporting substrate 200 so that the supporting substrate 200 is in a horizontal position relative to the main substrate 300, which are provided between the supporting substrate 200 and main substrate 300.

A probe card mounted in an of electronic device testing apparatus is described, having a probe head housing a plurality of contact probes, each having a first end portion which abuts onto contact pads of a device under test, a main board and a connected intermediate board which provides a distance spatial transformation between contact pads made on opposite faces thereof. The intermediate board is a space transformer which includes a plurality of modules that are plate-shaped and coplanar, and structurally and functionally independent from each other. Each module has a first face facing towards the probe head and a first plurality of contact pads whereonto respective second end portions of the contact probes abut and an opposite second face facing towards the main board. The second face has a second plurality of contact pads connected to the first plurality of contact pads.

The invention relates to the technical field of wafer testing, and discloses a probe card and a testing system. The probe card comprises a plurality of unit groups which are periodically arranged; the unit group comprises at least two coaxial probes; wherein at least one coaxial probe is used for abutting against the input end of a to-be-tested device, and at least one coaxial probe is used for abutting against the output end of the to-be-tested device. According to the invention, through the plurality of unit groups arranged in the periodic array, a plurality of devices can be tested at a time when wafer testing is carried out, so that the wafer testing speed is improved, the wafer testing time is shortened, and the problems of low testing speed and long testing time existing in wafer testing in the prior art are solved.

A light absorption probe includes an arm segment, a main segment located at one side of the arm segment, a testing segment connected to another side of the arm segment, and a light absorption coating layer. The main segment has a soldering end portion and an extending end portion respectively located at two opposite sides thereof along a predetermined direction. The testing segment has an upright shape along the predetermined direction and includes a pinpoint portion and an upright portion that connects the pinpoint portion and the arm segment. The light absorption coating layer covers the upright portion, and the pinpoint portion is exposed from the light absorption coating layer. Through the light absorption coating layer, the testing segment only forms an observation point at the pinpoint portion in an observation process of a detection apparatus.

The invention relates to the technical field of wafer testing, and discloses a visual wafer identification probe station which comprises a processing table, a probe card, a bearing table assembly and an observation assembly. The probe card is selectively arranged on the processing table; the probe card comprises four groups of probe array assemblies; the bearing table assembly is used for driving the wafer to move in the space so as to be selectively matched with the probe card; the observation assembly comprises a driving assembly and four groups of visual monitoring assemblies, the four groups of visual monitoring assemblies are in one-to-one correspondence with the four groups of probe array assemblies, and the driving assembly is used for driving the four groups of visual monitoring assemblies to selectively monitor the corresponding probe array assemblies; the visual monitoring assembly comprises a camera and an adjusting assembly, and the adjusting assembly is used for adjusting the angle of the camera so as to monitor each probe body in the probe array assembly. The condition of the tip end of the probe body can be observed more accurately, so that the abrasion loss of the probe body can be compensated selectively, or the probe body or the probe card can be replaced selectively.

The invention relates to a calibration method of CIS probe card measuring equipment, which comprises the following steps: step 1, before testing, debugging a product bracket for fixing a product to be tested to a preset height; 2, obtaining a plurality of calibration blocks consistent with the sizes of the to-be-tested products respectively, obtaining a plurality of calibration seats matched with the to-be-tested products respectively, and installing one calibration block in the product support through the corresponding calibration seat; 3, a light source is arranged in front of the calibration block, a light sensor is arranged behind the calibration block, and the horizontal angle and the vertical angle of the light sensor are adjusted, so that the planes where the light source, the calibration block and the light sensor are located are parallel; 4, dismounting the calibration block, replacing the calibration block with a corresponding product to be tested, and starting to test; and 5, after the test is completed, compensating the output value of the optical sensor based on a compensation algorithm to obtain a calibration result. Deviation of parameters such as light intensity and illumination of the light source at different positions can be eliminated, and optical parameter detection of the lens module is achieved.

The invention relates to the technical field of wafer testing, and particularly provides a clamp for wafer aging test, which comprises a PCB (printed circuit board), the PCB is fixedly arranged below an upper cover plate, a fixer fixes a probe card below the PCB, the PCB covers a lower cover plate, and the fixer and the probe card are both positioned in a test cavity. The inner ring of the fixator protrudes inwards in the radial direction to form an annular bearing platform, the multiple positioning columns are installed on the surface of the bearing platform in an array mode in the circumferential direction, multiple positioning holes are formed in the edge of the probe card in the axial direction, each positioning column corresponds to one positioning hole in position, the positioning columns are embedded into the positioning holes, and the probe card is fixed to the bearing platform. A plurality of abutting columns with adjustable resilience force are elastically arranged on the side face of each positioning column in the circumferential direction, the tail ends of the abutting columns abut against the inner surfaces of the positioning holes, and the abutting columns can elastically move in the radial direction of the positioning columns. According to the invention, the problem of poor contact effect between the probe and the contact caused by deformation of the probe card due to a high-temperature atmosphere during an aging test can be avoided.

The invention belongs to the technical field of semiconductor testing, and particularly relates to an HBM-DRAM grouping testing system and method, and the system comprises a main testing controller and a plurality of testing execution units configured in the system. And the main test controller is in communication connection with the plurality of test execution units through a preset test coordination bus. By physically segmenting the test interface into a plurality of independent, low-needle-count probe card modules, challenges of designing and manufacturing a single, huge, ultra-high-needle-count probe card are fundamentally avoided. Therefore, the manufacturing cost, the calibration difficulty and the maintenance cost of each probe card module are greatly reduced, and the overall yield and the service life of the probe card are remarkably improved.

The invention discloses an impedance self-adaptive high-frequency probe, a probe card and a testing method, and belongs to the technical field of semiconductor high-frequency testing. When an existing high-frequency probe is used for a crimping test, a conductive probe body of the existing high-frequency probe generates mechanical deformation due to contact pressure, so that characteristic impedance is deviated, and uneven pressure in an array causes impedance dispersion. The problem is solved by coating the outer side of the conductive needle body with a composite material layer, the composite material layer is composed of an elastic insulating matrix and metal particles dispersed in the elastic insulating matrix, the metal particles have bimodal particle size distribution, and the total integral number is 30%-40%. When the probe is pressed, the composite material layer is subjected to reversible microscopic reconstruction, the effective dielectric constant of the composite material layer is increased along with the increase of the pressure, and the generated impedance change can counteract the impedance drop caused by the deformation of the conductive probe body, so that the self-adaptive stability of the characteristic impedance of the probe under the change of the pressure is realized. The impedance dispersion of the probe array can be remarkably reduced, the consistency and precision of high-frequency testing are improved, and the process compatibility is good.

The embodiment of the invention provides a temperature drift compensation device, method and equipment for contact impedance of a high-frequency probe card. The system is applied to the technical field of semiconductor testing and comprises a temperature monitoring module, an impedance modeling module, a compensation execution module and a cooperative control module which are connected in sequence. In this way, the technical problems that in the prior art, temperature drift compensation is slow in response and insufficient in precision are solved through the sub-millisecond-level temperature monitoring network, the nonlinear compensation model and multi-probe cooperative compensation in combination with the self-adaptive Kalman filtering algorithm.

The invention relates to the technical field of image processing, and provides a two-stage probe card pin print automatic detection method based on YOLO improvement, and the method comprises the steps: constructing a welding spot sample data set, and training a pin print detection model based on a YOLOv8 frame; obtaining a welding spot positioning result based on the trained needle print detection model; based on a welding spot positioning result, extracting potential needle print features by adopting an image processing method; and based on the potential needle print features, recognizing and positioning the needle print defects by adopting a geometrical shape feature judgment method. According to the method, a grading detection strategy is adopted, the recall rate and the positioning precision of needle print recognition can be remarkably improved, and high-precision and robust detection under the complex background is achieved. In addition, the method has good expandability and can be migrated and applied to automatic detection tasks of other types of tiny surface features or defects.

The utility model discloses a vertical probe card with an anti-drop structure, which relates to the technical field of probe cards, and comprises a mounting body connected with a mounting seat in a matching manner, a fixing assembly arranged between the mounting seat and the mounting body in a matching manner, and a probe card mechanism used for testing a semiconductor wafer, a moving cavity is formed in the mounting body, the probe card mechanism comprises a fixing piece which is in sliding fit with the interior of the moving cavity, the bottom surface of the fixing piece is fixedly connected with a detection needle head, a through hole which is in sliding fit with the detection needle head is formed in the lower end of the moving cavity, and the detection needle head extends to the position below the mounting body through the through hole. When the device is used, the detection needle head is in contact with the wafer under the action of gravity, so that the abrasion of the wafer to the detection needle head is reduced to the greatest extent, no elastic component is arranged in the whole process, elastic fatigue is avoided, and the service life of the device is prolonged.

The invention discloses a probe card flatness detection method, equipment and a medium, relates to the technical field of semiconductor testing, and solves the problems that the current probe card flatness detection is easily influenced by factors such as illumination conditions, so that the detection difficulty of a single probe is high, and the detection of a probe card is inaccurate. The method comprises the following steps: constructing a position length matrix of the probe through the length of the optical probe and the coordinates of the probe, and then judging the corresponding qualification condition of the first flatness of the probe card according to the position length matrix; based on the test results of the probe card and the first test film and the test results of the probe card and the second test film, the corresponding qualification condition of the second flatness of the probe card is judged; the actual impedance value of the probe is detected, and the corresponding qualification condition of the third flatness of the probe card is judged; the thermal deformation of the probe is calculated, whether the overall flatness of the probe card is qualified or not is judged based on the thermal deformation, and accurate detection of the flatness of the probe card is achieved by combining multiple detection methods.

The invention provides a full-automatic probe position inspection system for a probe card, and the system comprises a morphology collection module which is used for carrying out the three-dimensional morphology scanning of a probe group of the probe card, and obtaining the three-dimensional point cloud data of the probe group; the probe position analysis module is connected to the morphology acquisition module, comprises a machine learning model and is used for processing the three-dimensional point cloud data and generating probe position deviation data and probe health state scores; the compensation execution module is connected to the probe position analysis module and is used for scoring based on the probe position deviation data and the probe health state; calculating an optimal contact position, and driving the carrying platform to move to the position; and the verification module is used for verifying the accuracy of the needle position after the contact is executed at the optimal contact position. Passive detection, predictive maintenance and process closed-loop optimization are crossed, and the test yield, the equipment service life and the manufacturing process level are comprehensively improved through data driving.

To provide a ceramic having a high coefficient of thermal expansion and a low dielectric constant.SOLUTION: 50.0 to 90.0 mass% of 2MgO and SiO2, a total of 8.0 mass% or more of one of 7.0 to 14.0 mass% of ZrO2 and 10.0 to 50.0 mass% of Al2O3 or both of 14.0 mass% or less of ZrO2 and 50.0 mass% or less of Al2O3, and 3.0 to 15.0 mass% of one or more selected from Y2O3, CaO, CeO2, and HfO2, wherein a crystalline structure of the is a cubic structure. ZrO2.SELECTED DRAWING: None

A method for detecting a contact force of a probe card is provided. The method includes supporting a substrate of the probe card using a support in contact with the substrate via a connector. The method includes detecting the contact force of the probe card while the substrate is supported by the support. The method also includes adjusting a position of a push base over the substrate based on the detected contact force, and adjusting the position of the push base over the substrate includes adjusting a plurality of first positioning elements in the support.

The invention provides a wafer test probe pressure control method and system, electronic equipment and a storage medium. The method comprises the following steps: acquiring probe card information and to-be-tested product information configured for a current test task; based on the probe card information and the to-be-tested product information, extracting a corresponding multi-dimensional parameter set from a pre-established probe card comprehensive parameter database; inputting the multi-dimensional parameter set into a preset probe pressure optimization model, and calculating a probe pressure control interval suitable for the current test task; sending the probe pressure control interval to a production execution system in communication connection with the probe station; executing the current test task under the control of the production execution system, and collecting an actual probe pressure value applied by the probe station in real time through the production execution system; in response to the fact that the actual needle pressure value exceeds the needle pressure control interval, the production execution system is triggered to execute needle pressure abnormal control operation, and the problem that the needle mark is large due to the fact that non-optimal fixed needle pressure is used is solved.

The invention belongs to the technical field of semiconductor testing, and discloses a WAT test probe card life cycle management method and system. The method comprises the following steps: collecting full-life-cycle multi-source data of a probe card, performing unified management, and constructing a probe card digital twin data model; carrying out change point detection and segmentation on monitoring time sequence data, and constructing a stable fragment library; extracting a unified feature vector including electrical contact, test distribution, space structure and life load; calculating a needle card health index based on a machine learning regression model; predicting the remaining service life and the failure probability by using a proportional risk survival model; according to the health index, the remaining life and the failure probability, generating a maintenance decision suggestion and recommending execution time; the model is updated through maintenance result feedback, and closed-loop optimization is achieved. By means of the mode, accurate evaluation and predictive maintenance of the health state of the probe card are achieved.

The invention discloses a probe card contact depth detection method and system, a storage medium and electronic equipment. The method comprises the following steps: setting a contact depth parameter of a probe card as an initial value; performing first adjustment on the contact depth parameter by adopting a bidirectional stepping adjustment mode, detecting the contact state of each probe on the probe card, and determining the contact depth parameter of the probe card as a first contact depth value when the contact state shows that the number of the successfully contacted probes on the probe card meets a preset number; based on the first contact depth value, performing second adjustment on the contact depth parameter by adopting a bidirectional stepping adjustment mode, detecting the contact state of each probe on the probe card, and determining that the contact depth parameter of the probe card is a full contact depth value when the contact state shows that the full contact of the probes on the probe card is successful; and determining the contact depth parameter of the probe card as the target contact depth according to the full contact depth value and the preset adjustment amount. According to the invention, the accuracy and efficiency of contact depth setting are improved.

A probe needle for testing a device under test (DUT) includes a needle core; a needle coat; and an isolation layer disposed between the needle coat and the needle core, wherein in an extending direction of the needle core, the isolation layer extends exceeding the needle coat and the needle core extends exceeding the isolation layer. A probe card structure including the probe needle having a needle core; a needle coat; and an isolation layer and a method of testing a device under test using the probe card structure are also provided.

Embodiments herein provide for probe cards and methods related thereto. A probe card comprises a probe and a substrate. The probe comprises a probe stand, a probe beam, and a probe tip. The probe tip and probe stand extend in a first direction, and the probe beam extends in a second direction different than the first direction. The substrate comprises a conductive feature disposed in a material layer. The probe stand of the probe is directly bonded to the conductive feature of the substrate via direct metal bonds.

A probe unit includes first and second probes of equal length. A probe body of at least one of the probes has a slot extending along a longitudinal direction thereof to define two slats. A total cross-sectional area of the slats of the first probe is greater than that of the second probe. Alternatively, the probe body of the second probe is solid, and the total cross-sectional area of the slats of the first probe is greater than the cross-sectional area of the solid probe body of the second probe. The slats are shaped in such a way that a contact force of the first probe is greater than that of the second probe, thereby meeting testing requirements of conductive contacts of different sizes on an electronic device under test, while reducing problems of different probe tip wear rates and excessive probe mark area ratio differences.

The invention discloses wafer dynamic parameter testing equipment which is provided with a testing device and a probe card for testing a wafer which is placed on a probe table and is internally provided with a to-be-tested device, and the probe card is provided with a plurality of probes connected with the to-be-tested device and a plurality of conductive contact pieces connected with the probes respectively. A connecting module of the testing device is provided with a plurality of connectors connected with conductive contact pieces, a high-voltage capacitor electrically connected with a high-voltage power supply in the testing device is connected with an inductive load module through a power switch, the inductive load module is connected with the connectors, and a control module is connected with a chip to be tested through the connectors. The control module realizes the dynamic parameter test of the device to be tested in the wafer by controlling the power switch to be turned on and turned off according to a certain time sequence, and the matching value of the probe card and the connector can reduce spurious oscillation signals so as to effectively improve the accuracy of the dynamic parameter test of the wafer. And therefore, the chip testing efficiency can be improved and the chip cost can be reduced.

According to the probe card module and the manufacturing process, the manufacturing cost is low, the stability is high, the abrasion resistance is good, the service life is long, and low-loss transmission of high-frequency signals can be guaranteed. The device comprises a bottom plate, the bottom plate is provided with a first limiting rotating shaft, the first limiting rotating shaft is sleeved with a plurality of shifting blocks, ceramic chips are arranged at the ends of the shifting blocks, the ceramic chips are zirconia ceramics, and the ends of the ceramic chips are bonded with probes through UV glue. The method is applied to the technical field of semiconductor testing.

The present disclosure provides a package structure, an antenna module, and a probe card. The package structure includes a connection member and a first redistribution structure disposed on the connection member. The connection member includes a conductive connector and an insulation layer surrounding the conductive connector. The first redistribution structure includes a first dielectric layer, and a first wiring pattern, and a first device. The first dielectric layer is disposed on the connection member. The first wiring pattern is disposed in the first dielectric layer. The first device is disposed above the first dielectric layer and is electrically connected to the conductive connector.

The application provides a power module test method, system, device and medium. The method is applied to a chip test device, the chip test device includes a probe card, the probe card includes a plurality of phase sequence modules, and each phase sequence module is connected with a drive board. For the plurality of phase sequence modules, when it is detected that a target drive board is powered on, the target drive board reads test configuration information from the phase sequence module, the target drive board generates a first target phase sequence drive voltage based on initial phase sequence voltage information in the test configuration information, when a drive instruction is received, the target drive board generates a drive signal, and based on the drive signal, the first target phase sequence drive voltage is transmitted to the power module under test through the phase sequence module at a target pin to drive the power module under test. Therefore, no matter how the drive board is placed, the phase sequence drive voltage generated by the drive board can be accurately matched to the corresponding phase sequence of the device through the power module under test, manual operation errors are reduced, and test safety is ensured.

A bridge beam attached to a semiconductor device handling apparatus that handles a semiconductor device, includes a beam-shaped main body to which a probe card is attached. The probe card has a contact that is electrically connected to a terminal of the semiconductor device. The bridge beam includes a first actuator, attached to the beam-shaped main body, that moves an optical probe relative to the semiconductor device. The optical probe performs one or both of emitting an optical signal to the semiconductor device and receiving the optical signal from the semiconductor device.

This utility model discloses a liquid crystal panel moving testing fixture, belonging to the field of liquid crystal panel testing technology. The fixture includes a mounting platform, a guide rail fixed to the mounting platform, a probe holder slidably mounted on the guide rail, a removable elastic probe inserted into the probe holder, a clamping block that elastically presses a flexible circuit board against the rear end of the probe, and a mounting platform for supporting and fixing the liquid crystal panel. The front end of the probe is pressed against the detection point of the liquid crystal panel, and the other end of the flexible circuit board is connected to an external testing circuit via a piano cover, forming a quickly replaceable testing path. This utility model utilizes the cooperation between the elastic probe and the clamping block to achieve a highly reliable, low-contact-resistance electrical connection; the probe holder as a whole can move along the guide rail to adapt to different testing positions; the pluggable probe structure facilitates maintenance, significantly improving testing efficiency and reducing testing costs.

An example test system includes a probe card configured to contact a device under test (DUT); a module including a first optical connector configured to contact a second optical connector on the DUT, with the first optical connector being for a fiber optic cable; and a motion system configured to move into, and out of, contact with the module. When the motion system is in contact with the module, the motion system is configured to move the module relative to the DUT in order to align the first optical connector to the second optical connector.

The invention relates to an electrical property testing device and an electrical property testing method of a silicon substrate chip. The device comprises a wafer-level chip to be tested and a test platform, the wafer-level chip to be tested comprises a plurality of core particles and a plurality of test areas; the core particles are connected based on interconnection lines; a metal interconnection structure is pre-buried on the core particle; each test area covers the crossed area of the four core particles; the crossed region comprises a part of metal interconnection structure; and the test platform is used for controlling the probe card to be in contact with the metal interconnection structures in the test areas to carry out an electrical test on the wafer-level chip to be tested. According to the electrical property testing device, a wafer level interconnection electrical property testing method based on a window translation mode can be realized, and a whole set of testing solution which can cover the whole wafer, can be reused and can be traced is designed aiming at the reliability problem of a cross-region interconnection structure in a large-scale photomask splicing process.