959 results about "Probe card" patented technology

An object of the invention is to provide a probe card capable of properly performing a measurement. A probe card according to the invention includes: probes 100 shaped to allow vertical elastic deformation; a supporting substrate 200 with the probes provided on the lower surface thereof; a main substrate 300 positioned opposing the upper surface of the supporting substrate 200; an intermediate substrate 400 disposed between the supporting substrate 200 and main substrate 300; a supporting member 500 that is a column-shaped member with one end thereof attached to the center of the supporting substrate 200 and the other end thereof attached to the intermediate substrate 400 and holds the supporting substrate 200 so that the supporting substrate 200 is inclinable; and elastic members for holding the supporting substrate 200 so that the supporting substrate 200 is in a horizontal position relative to the main substrate 300, which are provided between the supporting substrate 200 and main substrate 300.

Proposed are an electro-conductive contact pin capable of effectively testing the electrical characteristics of a test object without a body thereof being elastically bent or curved in a convex shape in the horizontal direction by pressure applied to opposite ends thereof, and a vertical probe card having the same.

A probe card mounted in an of electronic device testing apparatus is described, having a probe head housing a plurality of contact probes, each having a first end portion which abuts onto contact pads of a device under test, a main board and a connected intermediate board which provides a distance spatial transformation between contact pads made on opposite faces thereof. The intermediate board is a space transformer which includes a plurality of modules that are plate-shaped and coplanar, and structurally and functionally independent from each other. Each module has a first face facing towards the probe head and a first plurality of contact pads whereonto respective second end portions of the contact probes abut and an opposite second face facing towards the main board. The second face has a second plurality of contact pads connected to the first plurality of contact pads.

The invention relates to the technical field of wafer testing, and discloses a probe card and a testing system. The probe card comprises a plurality of unit groups which are periodically arranged; the unit group comprises at least two coaxial probes; wherein at least one coaxial probe is used for abutting against the input end of a to-be-tested device, and at least one coaxial probe is used for abutting against the output end of the to-be-tested device. According to the invention, through the plurality of unit groups arranged in the periodic array, a plurality of devices can be tested at a time when wafer testing is carried out, so that the wafer testing speed is improved, the wafer testing time is shortened, and the problems of low testing speed and long testing time existing in wafer testing in the prior art are solved.

A probe card for a circuit probe test system and methods of fabrication thereof. The probe card includes a substrate portion, and a probe head including a guide plate located below the substrate portion and having a plurality of openings through the guide plate, and a conductive trace on the guide plate that extends between a pair of the openings. A plurality of probe pins extend through the openings through the guide plate, where a pair of probe pins are electrically connected by the conductive trace to form a loopback signal path. Accordingly, the loopback signals may be routed through the conductive trace located on and / or within the guide plate rather than through the substrate portion of the probe card. This may significantly reduce the total length of the loopback signal path, which may thereby improve the signal integrity (SI) during loopback testing of a device-under-test.

The invention discloses a method for preventing needle burning during testing of breakdown voltage of a discrete device. According to the method, in a test loop comprising a probe card and a test source, a voltage-withstanding module is connected in series between the probe card and a low-potential end of the test source. The voltage-withstanding module comprises a detection resistor Rx and a voltage-withstanding switching device connected with the detection resistor Rx in parallel. When the test current I is applied, if the current is increased abnormally due to poor contact and the like, and the voltage drop on the detection resistor Rx is greater than or equal to the starting voltage VT of the voltage-withstanding switching device, the voltage-withstanding switching device is switched on, the test current I is shunted, and the current flowing through the probe card is reduced, so that the probe is prevented from being burnt. The breakdown voltage of the tested device is calculated by measuring the total voltage V at the two ends of the test source and subtracting the voltage drop (I * Rx) on the detection resistor Rx, and the test accuracy is ensured. The method can effectively protect the probe card and improve the test reliability and efficiency.

The invention discloses an MEMS (Micro Electro Mechanical System) elastic probe for a collaborative test before co-packaging, which has electrical conductivity on the whole and comprises an elastic main body and a salient point arranged at the upper end of the elastic main body, and when the salient points are pressed, the elastic main body can adaptively and elastically deform. The invention aims to provide the interposer MEMS spring probe for the HBM test, which has the advantages of stable connection signal and lossless and detachable connection.

A light absorption probe includes an arm segment, a main segment located at one side of the arm segment, a testing segment connected to another side of the arm segment, and a light absorption coating layer. The main segment has a soldering end portion and an extending end portion respectively located at two opposite sides thereof along a predetermined direction. The testing segment has an upright shape along the predetermined direction and includes a pinpoint portion and an upright portion that connects the pinpoint portion and the arm segment. The light absorption coating layer covers the upright portion, and the pinpoint portion is exposed from the light absorption coating layer. Through the light absorption coating layer, the testing segment only forms an observation point at the pinpoint portion in an observation process of a detection apparatus.

A probe card MLO pad point position contraction design simulation method is characterized by comprising the following steps that 1, a temperature field simulation model is established, and a temperature simulation result file is obtained and comprises the steps that 1.1, temperature data are actually measured; step 1.2, establishing a temperature field simulation model by adopting a finite element analysis method, modeling an air fluid part in the cavity into a solid air medium by using a steady-state thermal analysis module, and endowing the solid air with a heat transfer coefficient; calibrating heat transfer coefficients in the temperature field simulation model: a heat transfer coefficient A, a heat transfer coefficient B and a heat transfer coefficient C; 1.3, correcting and iterating the heat transfer coefficient A, the heat transfer coefficient B and the heat transfer coefficient C; 1.4, obtaining a temperature field simulation result file of the probe card at the specified high-temperature loading temperature; 2, establishing a physical field simulation model, and obtaining a simulation pad displacement result; and step 3, calculating to obtain a new pad point position coordinate for iterative production.

[Problem] To facilitate passing of a probe through two or more guide plates. [Solution] Provided is a probe passing method for a probe card 1 in which two guide plates 301, 302 are spaced apart from each other, and a probe 50 is passed through two guide holes 311, 312 respectively formed in the two guide plates 301, 302, the method comprising: a step for passing a towing rod 60 through the two guide holes 311, 312; a step for separably linking the tip-end of the towing rod 60, having passed through the two guide holes 311, 312, to a linking portion 510 provided at the tip-end of the probe 50; a step for pulling the towing rod 60 out of the receiving two guide holes 311, 312, and passing the probe 50 through the two guide holes 311, 312; and a step for separating the towing rod 60, having been pulled out of the two guide holes 311, 312, from the probe 50.

The invention relates to the technical field of wafer testing, and discloses a visual wafer identification probe station which comprises a processing table, a probe card, a bearing table assembly and an observation assembly. The probe card is selectively arranged on the processing table; the probe card comprises four groups of probe array assemblies; the bearing table assembly is used for driving the wafer to move in the space so as to be selectively matched with the probe card; the observation assembly comprises a driving assembly and four groups of visual monitoring assemblies, the four groups of visual monitoring assemblies are in one-to-one correspondence with the four groups of probe array assemblies, and the driving assembly is used for driving the four groups of visual monitoring assemblies to selectively monitor the corresponding probe array assemblies; the visual monitoring assembly comprises a camera and an adjusting assembly, and the adjusting assembly is used for adjusting the angle of the camera so as to monitor each probe body in the probe array assembly. The condition of the tip end of the probe body can be observed more accurately, so that the abrasion loss of the probe body can be compensated selectively, or the probe body or the probe card can be replaced selectively.

The embodiment of the invention discloses a probe card OS test device and a test method. The device comprises: a base; the probe card mounting assembly is mounted on the base; the movable carrying table is mounted on the base, and a conductive block and an insulating block are arranged on the movable carrying table; the movable carrying table is configured to drive the conductive block and the insulating block to move, so that the conductive block or the insulating block is in contact with each probe of a probe card on the probe card mounting assembly to form a plurality of test paths in one-to-one correspondence with the probes or to enable the top ends of the probes to be mutually insulated; and the open / short circuit test module is respectively connected with the conductive block and each probe of the probe card, and the open / short circuit test module is configured to be conducted with the test path or each probe according to a preset mode so as to carry out open / short circuit test on each probe of the probe card. According to the embodiment of the invention, the open / short circuit test of each probe of the probe card is realized.

The invention relates to a calibration method of CIS probe card measuring equipment, which comprises the following steps: step 1, before testing, debugging a product bracket for fixing a product to be tested to a preset height; 2, obtaining a plurality of calibration blocks consistent with the sizes of the to-be-tested products respectively, obtaining a plurality of calibration seats matched with the to-be-tested products respectively, and installing one calibration block in the product support through the corresponding calibration seat; 3, a light source is arranged in front of the calibration block, a light sensor is arranged behind the calibration block, and the horizontal angle and the vertical angle of the light sensor are adjusted, so that the planes where the light source, the calibration block and the light sensor are located are parallel; 4, dismounting the calibration block, replacing the calibration block with a corresponding product to be tested, and starting to test; and 5, after the test is completed, compensating the output value of the optical sensor based on a compensation algorithm to obtain a calibration result. Deviation of parameters such as light intensity and illumination of the light source at different positions can be eliminated, and optical parameter detection of the lens module is achieved.

The invention relates to the technical field of wafer testing, and particularly provides a clamp for wafer aging test, which comprises a PCB (printed circuit board), the PCB is fixedly arranged below an upper cover plate, a fixer fixes a probe card below the PCB, the PCB covers a lower cover plate, and the fixer and the probe card are both positioned in a test cavity. The inner ring of the fixator protrudes inwards in the radial direction to form an annular bearing platform, the multiple positioning columns are installed on the surface of the bearing platform in an array mode in the circumferential direction, multiple positioning holes are formed in the edge of the probe card in the axial direction, each positioning column corresponds to one positioning hole in position, the positioning columns are embedded into the positioning holes, and the probe card is fixed to the bearing platform. A plurality of abutting columns with adjustable resilience force are elastically arranged on the side face of each positioning column in the circumferential direction, the tail ends of the abutting columns abut against the inner surfaces of the positioning holes, and the abutting columns can elastically move in the radial direction of the positioning columns. According to the invention, the problem of poor contact effect between the probe and the contact caused by deformation of the probe card due to a high-temperature atmosphere during an aging test can be avoided.

The invention belongs to the technical field of semiconductor testing, and particularly relates to an HBM-DRAM grouping testing system and method, and the system comprises a main testing controller and a plurality of testing execution units configured in the system. And the main test controller is in communication connection with the plurality of test execution units through a preset test coordination bus. By physically segmenting the test interface into a plurality of independent, low-needle-count probe card modules, challenges of designing and manufacturing a single, huge, ultra-high-needle-count probe card are fundamentally avoided. Therefore, the manufacturing cost, the calibration difficulty and the maintenance cost of each probe card module are greatly reduced, and the overall yield and the service life of the probe card are remarkably improved.

The utility model provides a probe station, and relates to the technical field of thermal printing head equipment. Comprising an industrial control system, and a vacuum adsorption platform, an XY-axis displacement mechanism, a Z-axis lifting mechanism, a rotation angle compensation mechanism, a visual positioning system, a probe washing device, a probe card and a resistance adjusting case which are connected with the industrial control system. Through the equipment, the uniformity during resistance trimming can be improved, and the resistance trimming efficiency is improved.

The invention discloses an impedance self-adaptive high-frequency probe, a probe card and a testing method, and belongs to the technical field of semiconductor high-frequency testing. When an existing high-frequency probe is used for a crimping test, a conductive probe body of the existing high-frequency probe generates mechanical deformation due to contact pressure, so that characteristic impedance is deviated, and uneven pressure in an array causes impedance dispersion. The problem is solved by coating the outer side of the conductive needle body with a composite material layer, the composite material layer is composed of an elastic insulating matrix and metal particles dispersed in the elastic insulating matrix, the metal particles have bimodal particle size distribution, and the total integral number is 30%-40%. When the probe is pressed, the composite material layer is subjected to reversible microscopic reconstruction, the effective dielectric constant of the composite material layer is increased along with the increase of the pressure, and the generated impedance change can counteract the impedance drop caused by the deformation of the conductive probe body, so that the self-adaptive stability of the characteristic impedance of the probe under the change of the pressure is realized. The impedance dispersion of the probe array can be remarkably reduced, the consistency and precision of high-frequency testing are improved, and the process compatibility is good.

A probe head of a probe card device includes two guide board modules spaced apart from each other, a plurality of conductive probes, and an auxiliary probe, the latter two of which are assembled to the two guide board modules. At least one of the conductive probes abuts against a connection circuit of one of the two guide board modules. One end of each of the conductive probes protrudes from one of the two guide board modules and is configured to detachably abut against a device under test (DUT). The auxiliary probe abuts against the connection circuit so as to be electrically coupled to the at least one of the conductive probes. One end of the auxiliary probe is fixed in the one of the two guide board modules, and faces toward and is not in contact with the DUT.

Suppresses reflection from a circuit board including a light-transparent insulating film formed on an interlayer wiring to easily identify an alignment mark formed on a probe. The probe card comprises a circuit board 103 on which an insulating film 304 and an electrode pad 3 are formed and a probe 5 attached onto the electrode pad 3. The probe 5 has an alignment mark 7 identifiable from an opposite side of the circuit board 103. The alignment mark 7 is positioned outside of the electrode pad 3 on the circuit board 103. The insulating film 304 is a light-transmissive thin film covering an interlayer wiring 314. An anti-reflection film 6 with lower light transmittance than the insulating film 304 is formed in some regions on the insulating film 304. The anti-reflection film 6 is formed on a position corresponding to the alignment mark 7 and a region surrounding the position.

The invention provides a probe card tip condition detection method, a probe card tip condition detection structure, a wafer and a wafer test method, and relates to a probe card tip condition detection method, which comprises the following steps: determining a plurality of probes to be tested of a probe card; a plurality of probe pads are determined, and a metal wire structure is arranged between every two probe pads in sequence so as to be connected to form a test circuit; probes to be tested are inserted into the corresponding probe pads for contact connection; dividing and designing a plurality of test groups based on the positions of the probe pads in the test circuit, and measuring the contact resistance of the to-be-tested probes and the corresponding probe pads; and judging the tip state of the to-be-tested probe based on the contact resistance of the to-be-tested probe and the corresponding probe pad. The probe point condition of the probe card is monitored by using an electrical test means, so that the test cost is reduced, and the test accuracy and the detection efficiency are further improved.

The embodiment of the invention provides a temperature drift compensation device, method and equipment for contact impedance of a high-frequency probe card. The system is applied to the technical field of semiconductor testing and comprises a temperature monitoring module, an impedance modeling module, a compensation execution module and a cooperative control module which are connected in sequence. In this way, the technical problems that in the prior art, temperature drift compensation is slow in response and insufficient in precision are solved through the sub-millisecond-level temperature monitoring network, the nonlinear compensation model and multi-probe cooperative compensation in combination with the self-adaptive Kalman filtering algorithm.

The invention provides a wafer test needle trace position intelligent calibration method and system based on multi-modal data, and relates to the technical field of semiconductor manufacturing, and the method comprises the steps: obtaining a wafer needle trace image and probe card contact force data, employing a radial polar coordinate convolution network to extract needle trace morphology features, and obtaining a wafer test needle trace position; the pressure and deformation relation is modeled by combining a five-layer full-connection neural network, the needle trace position deviation is calculated after feature fusion, calibration parameters are obtained based on multi-objective optimization functions such as position precision, contact stability and needle tip service life, the probe position is accurately adjusted, the test precision and efficiency are improved, and the service life of a probe card is prolonged.

The invention relates to the technical field of image processing, and provides a two-stage probe card pin print automatic detection method based on YOLO improvement, and the method comprises the steps: constructing a welding spot sample data set, and training a pin print detection model based on a YOLOv8 frame; obtaining a welding spot positioning result based on the trained needle print detection model; based on a welding spot positioning result, extracting potential needle print features by adopting an image processing method; and based on the potential needle print features, recognizing and positioning the needle print defects by adopting a geometrical shape feature judgment method. According to the method, a grading detection strategy is adopted, the recall rate and the positioning precision of needle print recognition can be remarkably improved, and high-precision and robust detection under the complex background is achieved. In addition, the method has good expandability and can be migrated and applied to automatic detection tasks of other types of tiny surface features or defects.

Proposed is a cartridge module that modularizes a probe card and a wafer to maintain positions thereof, and a multi wafer burn-in test device capable of inspecting multiple wafers in one test using the same. The device includes at least two chambers (120), each of which has a test head (121) that electrically connects a probe card and a tester (110) to test a loaded wafer, a cartridge module (200) including a first body (210) provided with the probe card (211), and a second body (220) provided with a wafer chuck (221) on which a wafer (10) is seated, the first body (210) and the second body (220) being detachably assembled with each other, a wafer loading unit (130) for loading the wafer (10) into the second body (220), and a transfer unit (150) configured to transfer and deliver the cartridge module (200).

The utility model discloses a vertical probe card with an anti-drop structure, which relates to the technical field of probe cards, and comprises a mounting body connected with a mounting seat in a matching manner, a fixing assembly arranged between the mounting seat and the mounting body in a matching manner, and a probe card mechanism used for testing a semiconductor wafer, a moving cavity is formed in the mounting body, the probe card mechanism comprises a fixing piece which is in sliding fit with the interior of the moving cavity, the bottom surface of the fixing piece is fixedly connected with a detection needle head, a through hole which is in sliding fit with the detection needle head is formed in the lower end of the moving cavity, and the detection needle head extends to the position below the mounting body through the through hole. When the device is used, the detection needle head is in contact with the wafer under the action of gravity, so that the abrasion of the wafer to the detection needle head is reduced to the greatest extent, no elastic component is arranged in the whole process, elastic fatigue is avoided, and the service life of the device is prolonged.

The invention relates to the field of chip Die test equipment, and discloses a probe card probe correction and maintenance auxiliary device which comprises a maintenance table, a position adjusting table and a correction observation mechanism which are arranged adjacently, a probe cleaning and limiting module, a probe correction and limiting module and a probe heat setting module are arranged on the maintenance table, and a three-axis position adjusting mechanism is arranged on the position adjusting table. The three-axis position adjusting mechanism is provided with an angle position adjusting mechanism capable of moving and positioning on the three-axis position adjusting mechanism in the horizontal longitudinal direction, the horizontal transverse direction and the vertical direction, the angle position adjusting mechanism is provided with a needle clamp fixing mechanism capable of rotating on the angle position adjusting mechanism in the vertical direction to adjust the angle, and the correction observation mechanism comprises a microscope and an observation position adjusting mechanism for adjusting the microscope to move relative to the maintenance table. Each maintenance action of the probe card is positioned and limited by means of an equipment structure, and the previous full-manual maintenance operation under a microscope is replaced, so that the maintenance difficulty is reduced, and the maintenance success rate and the maintenance efficiency are improved.

A guide board module of a probe card device includes two first guide boards, a first spacing sheet sandwiched between the two first guide boards, and a first heat-dissipation unit. Each of the two first guide boards has two first board surfaces respectively arranged on two opposite sides thereof and a plurality of first thru-holes penetrating therethrough. The first heat-dissipation unit includes two first covering layers and a first thermal conductor. The first covering layers are respectively formed on the two first board surfaces of one of the two first guide boards. A sum of areas of the two first covering layers is at least 50% of a sum of areas of the two first board surfaces. The first thermal conductor is connected in-between the two first covering layers and is formed in one of the first thru-holes of the corresponding first guide board.

Proposed is a probe card holder for wafer testing including a first body part (110) provided with a probe card (111) and through guide holes (112) vertically formed around the probe card (111), a second body part (120) provided with a wafer chuck (121) on which a wafer is seated and a magnet holder (122) corresponding to the guide hole (112), a weight ring (130) provided with a magnet chuck (131) that is inserted into the guide hole (112) and fixed with the magnet holder (122) by magnetic force, and assembled with the second body part (120) at a top of the first body part (110), and a clamping part (140) provided between the first body part (110) and the weight ring (130) to hold spacing between the first body part (110) and the weight ring (130).

The invention discloses a wafer-level MEMS scanning mirror testing device, and the device comprises a detection platform which is used for placing a scanning mirror to be detected; the probe card assembly can be connected with the signal output device and is electrically connected with the scanning mirror to be detected; the first clamping assembly is arranged on the detection table in a position adjustable mode and used for clamping and fixing the light source assembly, and the light source assembly is used for emitting light beams to the scanning mirror to be detected; the second clamping assembly is arranged on the detection table in a position-adjustable manner and is used for clamping and fixing the probe card assembly; the third clamping assembly is arranged on the detection table in a position adjustable mode and used for clamping and fixing a two-dimensional PSD, and the two-dimensional PSD is used for collecting a light beam scanning track formed by the scanning mirror to be detected. Therefore, the electric signal can be transmitted to the to-be-detected scanning mirror through the detection card assembly so as to drive the to-be-detected scanning mirror, the test requirement of a bare chip of a single MEMS scanning mirror which is not packaged after wafer scribing can be met, the test requirement of the MEMS scanning mirror in a whole wafer can also be met, and the test efficiency of the MEMS scanning mirror is improved. Therefore, the wafer-level MEMS scanning mirror testing device has good universality, is high in testing precision, can realize automatic testing, and is favorable for improving the testing efficiency and reducing the testing cost.

The invention discloses a probe card flatness detection method, equipment and a medium, relates to the technical field of semiconductor testing, and solves the problems that the current probe card flatness detection is easily influenced by factors such as illumination conditions, so that the detection difficulty of a single probe is high, and the detection of a probe card is inaccurate. The method comprises the following steps: constructing a position length matrix of the probe through the length of the optical probe and the coordinates of the probe, and then judging the corresponding qualification condition of the first flatness of the probe card according to the position length matrix; based on the test results of the probe card and the first test film and the test results of the probe card and the second test film, the corresponding qualification condition of the second flatness of the probe card is judged; the actual impedance value of the probe is detected, and the corresponding qualification condition of the third flatness of the probe card is judged; the thermal deformation of the probe is calculated, whether the overall flatness of the probe card is qualified or not is judged based on the thermal deformation, and accurate detection of the flatness of the probe card is achieved by combining multiple detection methods.