A bidirectional ESD protection method and circuit of a GaN enhancement-mode power device, and a dual-gate device. In the method, a double-
control switch constitutes an ESD energy
discharge path; when a device is in a normal positive-
voltage working state, the double-
control switch is switched off, and when ESD occurs, the double-
control switch is switched on to
discharge energy; when the device is in a normal negative-
voltage working state, the double-control switch is switched off, and when ESD occurs, the double-control switch is switched on to
discharge energy. The circuit comprises a first port and a second port, the two ports are connected to the double-gate switch device, a forward on control
assembly, and a reverse on control
assembly in parallel, and a first source and a
second source of the double-gate switch device are connected to the first port and the second port; the forward
assembly comprises a first
diode string and a first
resistor connected in series, and a series connection end is connected to one gate of the double-gate device; the reverse assembly comprises a second
diode string and a second
resistor connected in series, and a series connection end is connected to the other gate of the double-gate device. The double-gate device comprises a
barrier layer; the first and two sources are respectively arranged on the
barrier layer; first and second gates are arranged on first and second p-type cap
layers; and the
logic state of the two gates is "
AND gate".