1544 results about "Logic state" patented technology

Various logic elements such as SR flip-flops, JK flip-flops, D-type flip-flops, master-slave flip-flops, parallel and serial shift registers, and the like are converted into non-volatile logic elements capable of retaining a current output logic state even though external power is removed or interrupted through the strategic addition of ferroelectric capacitors and supporting circuitry. In each case, the building blocks of a cross-coupled sense amplifier are identified within the logic element and the basic cell is modified and/or optimized for sensing performance.

A floating-body dynamic random access memory device may include a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer may be formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode may be formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body. The gate electrode may only partially deplete a region of the semiconductor body, and the partially depleted region may be used as a storage node for logic states.

An array of programmable non-volatile devices are is adapted such that their logic state is controllably altered over time by quiescent changes, slow controlled changes, scheduled changes, or some combination thereof imposed at a physical level. This allows for improved security and privacy for data to be permanently deleted. In some applications a data refresh and/or automatic backup can be implemented as well.

An input buffer includes first and second cross-coupled differential amplifiers. Each amplifier drives a buffer signal from a first logic state to a second logic state at a first slew rate when input signal transitions from a first logic state to a second logic state and a complementary input signal transitions from the second logic state to the first logic state, and drives the buffer signal from the second logic state to the first logic state at a second slew rate when the signal transitions are the complement of these previous transitions. An output circuit generates a first edge of an output signal when the buffer signal from the first amplifier transitions from the first logic state to the second logic state and generates a second edged of the output signal when the buffer signal from the second amplifier transitions from the first to the second logic state.

A memory cell for use in a memory array includes a storage element for storing a logical state of the memory cell, a write circuit and a read circuit. The write circuit is operative to selectively connect a first node of the storage element to at least a first write bit line in the memory array in response to a write signal for selectively writing the logical state of the memory cell. The read circuit includes a substantially high impedance input node connected to the storage element and an output node connectable to a read bit line of the memory array. The read circuit is configured to generate an output signal at the output node which is representative of the logical state of the storage element in response to a read signal applied to the read circuit. The memory cell is configured such that the write circuit is disabled during a read operation of the memory cell so as to substantially isolate the storage element from the first write bit line during the read operation. A strength of at least one transistor device in the storage element is separately optimized relative to a strength of at least one transistor device in the write circuit and/or the read circuit.

A high-density memory array. A plurality of word lines and a plurality of bit lines are arranged to access a plurality of memory cells. Each memory cell includes a first conductive terminal and an article in physical and electrical contact with the first conductive terminal, the article comprising a plurality of nanoscopic particles. A second conductive terminal is in physical and electrical contact with the article. Select circuitry is arranged in electrical communication with a bit line of the plurality of bit lines and one of the first and second conductive terminals. The article has a physical dimension that defines a spacing between the first and second conductive terminals such that the nanotube article is interposed between the first and second conducive terminals. A logical state of each memory cell is selectable by activation only of the bit line and the word line connected to that memory cell.

A shift register includes first and second stages for sequentially outputting scan pulses to drive first and second gate lines. One of the first and second stages includes a pull-up switching device connected to an enabling node of the one of the first and second stages; a first pull-down switching device connected to a first disabling node of the one of the first and second stages; a second pull-down switching device connected to a second disabling node of the one of the first and second stages; and a node controller. The node controller of the first stage controls the logic state of each of the enabling node of the first stage, the first disabling node of the first stage and the first disabling node of the second stage. The node controller of the second stage controls the logic state of each of the enabling node of the second stage, the second disabling node of the second stage and the second disabling node of the first stage.

A cross-point memory includes a plurality of memory cells, a plurality of global word lines, a plurality of local word lines, and a plurality of global bit lines. At least a given one of the global word lines is configurable for conveying a write current for selectively writing a logical state of one or more of the memory cells. Each of the local word lines is connected to at least one of the memory cells for assisting in writing a logical state of the at least one memory cell corresponding thereto. Each of the global bit lines is connected to at least one of the memory cells for writing a logical state of the memory cell corresponding thereto. The memory further includes a plurality of selection circuits, each of the selection circuits being operative to electrically connect a given one of the local word lines to a given one of the global word lines in response to a control signal applied thereto. During a write operation directed to at least one selected memory cell, the write current passes through the selected memory cell for writing the logical state of the selected memory cell.

A container for locally determining a container state using a state device. The state device detects unexpected events by comparing expected event information with actual event information related to a container condition. The container condition includes, for example, environmental conditions, logistical or location conditions, and physical or security conditions. Thus, the container is able to intelligently monitor its state and raise an alert without intervention from a central system. The container can also be programmed and reprogrammed with updated logic, states, and/or expected event information. A sensor in the state device gathers input information for comparison to expected event information. A communication port in the state device receives event information. For example, a GPS (Global Positioning System) receiver can determine a current location for comparison to an expected location at the current time. In another example, an RFID (Radio Frequency Identification) receiver and transmitter automatically uploads state information to a central system.

A method and system sense the logic state of an unknown initial data bit stored in a selected resistive memory cell. According to one method, a first count representing the logic state of the unknown initial data bit stored in the selected memory cell is generated. A second count is then generated, and represents a data bit having a first known logic state stored in the selected memory cell. A third count is then generated, and represents a data bit having a second known logic state stored in the selected memory cell. The logic state of the initial unknown data bit stored in the selected memory cell is then determined from the first, second, and third counts.

A non-volatile semiconductor memory device includes a memory cell array in which electrically erasable and programmable memory cells are arrayed, each of the memory cells storing therein a first logic state with a threshold voltage lower than or equal to a first value or a second logic state with a threshold voltage higher than or equal to a second value that is higher than the first value, a data hold circuit for holding program data and sensing data as read out of the memory cell array, and a controller configured to control a program sequence, wherein the controller has the control functions of: a program control function for applying a program voltage to a selected memory cell of the memory cell array to let the data shift from the first logic state to the second logic state; a program verify control function for verifying that the programmed data of the selected memory cell shifted to the second logic state; an erratic program verify control function for checking that the threshold voltage of a memory cell to be held in the first logic state does not exceed a third value set as an upper limit value of a variation of the first logic state; and an over-program verify control function for checking that the threshold voltage of the selected memory cell shifted to the second logic state does not exceed a fourth value set as an upper limit thereof.

A shift register capable of preventing leakage current and a display device using the same are disclosed. The shift register includes a plurality of stages. Each stage includes a set unit setting a Q node in response to a start pulse or previous output, an inverter for controlling a QB node to have a logic state opposite to that of the Q node, an output unit for outputting any one input clock or a gate off voltage in response to the logic states of the Q and QB nodes, a reset unit including a reset switching element, the reset switching element resetting the Q node with a first reset voltage in response to a reset pulse or next output, and a noise cleaner resetting the Q node with a second reset voltage in response to the QB node. When the reset switching element is turned off, the first reset voltage is greater than a voltage of the reset pulse or the next output for the current.

The present invention applies genetic algorithmic generation of test cases the simulation of VLSI logic circuit blocks. The present invention generates a number of original test cases. This aggregate of solutions is provided to a circuit simulator. The results of the simulator are maintained in a matrix or table. The results detail the number of times that particular logic states or events associated with the VLSI block have been stimulated by particular test cases. The aggregate of solutions and the simulation results are then analyzed by the genetic algorithm. The genetic algorithm preferably identifies states associated with the circuit simulation that have not been produced by the original test cases. The genetic algorithm then combines characteristics of various test cases to generate new test cases. The new test cases are provided to the circuit simulator thereby providing a higher degree of confidence that the entire VLSI chip design has been simulated.

A process for presenting a state of availability of a user for communications using a plurality of telecommunication devices including at least one means for the production of the presentation associated with an intelligent platform, including acquiring first data composed of characteristics of a user including at least one identification of the user, at least two terminals to which the user can be associated with at least one characteristic of a connection mode and including storage at an address accessible to the intelligent platform of the characteristics, updating second data representative of a physical and/or logic state of a terminal of a user and/or of a general physical and/or logic state of the user with requests for the updating of the physical and/or logic state of an associated terminal and/or of the user by virtue of identification of a user and/or of the user's terminal by a system and/or an authorized user and including optional storage at an address accessible to the intelligent platform of the second data representative of the physical and/or logic state of the terminal or of the physical and/or logic state of the user, and determining the presentation of the first and the second data for a user from the first and the second data which user is registered in the service for presenting the state of a user of the intelligent platform and who made the request.