473 results about "Variable resistance" patented technology

A semiconductor device may include: a first conductive line including an opening passing through the first conductive line; a second conductive line disposed over the first conductive line and spaced apart from the first conductive line; a first electrode layer buried in the opening; a selector layer disposed in the opening and surrounding side surfaces of the first electrode layer; and a variable resistance layer disposed over the selector layer and the first electrode layer.

A semiconductor device may include: a plurality of word lines extending in a first direction; a plurality of bit lines extending in a second direction, a plurality of memory cells disposed at intersections of the plurality of word lines and the plurality of bit lines, respectively, each memory cell structured to include a variable resistance element configured to store data by exhibiting different resistance values and a selection element connected to the variable resistance element in series to selectively connect or disconnect the variable resistance element to the pair of the corresponding bit line and word line; and a boosting line connected to a portion of the selection element that is between one end of the selection element, which is connected to one of the word line and the bit line, and another end of the selection element, which is connected to the variable resistance element.

The invention discloses a resonance elimination circuit, method and device, and relates to the technical field of circuits, and the circuit comprises a controller, a resonance elimination resistor and a switching circuit. Two ends of the resonance elimination resistor are respectively connected with the neutral point of the voltage transformer and the ground. The controller controls the switching circuit to be switched off when ferromagnetic resonance is detected, so that the resonance elimination resistor is connected to suppress resonance; after the fault disappears, the control switch is switched on, and the neutral point is directly grounded. The controller compares the neutral point current with a first threshold value to determine resonance generation, and determines fault disappearance when the current is smaller than a second threshold value. And when the resonance elimination resistor is a variable resistor, the controller adjusts the resistance value according to the current change rate and a pre-learned mapping relation. The switching circuit can adopt a switching tube or a relay, and the controller realizes switching by controlling the switching tube to be turned off or a relay coil to be powered off. The circuit can rapidly suppress ferromagnetic resonance, guarantee system stability and improve fault processing efficiency.

The invention discloses a device and a method for measuring the velocity field of an autoclave through hot-pressing wind speed. The device comprises a thermosensitive probe, a Wheatstone bridge, a lock-in amplifier, an NI multi-channel data acquisition card and a computer, the thermosensitive probe is used for instantaneously detecting the temperature of a placement point position and generating resistance fluctuation based on sensing temperature change; the Wheatstone bridge is formed by connecting a fixed resistor, a variable resistor and a thermosensitive probe, and is used for forming a series circuit with the lock-in amplifier; the lock-in amplifier is used for supplying power to the Wheatstone bridge and providing co-frequency voltage at the same time, so that resistance data of a thermosensitive probe in the Wheatstone bridge is converted into voltage data to be output; the NI multi-channel data acquisition card is used for acquiring in-phase component voltage signals output by the lock-in amplifier; the computer is used for processing the voltage data to obtain the average speed and the pulsation speed of the measurement point. According to the invention, the problems of limited precision, insufficient sensitivity and poor adaptability to the internal environment of the autoclave in the conventional gas speed measurement method are solved.

A multiply and accumulate calculation device including a variable resistor array unit having a plurality of variable resistance elements, a reference array unit having a reference resistance element having a fixed resistance value, a signal input unit that generates an input signal from input data, and inputs the input signal to the variable and reference resistance elements, a first detection unit that detects a current flowing through the variable resistor array unit, based on the input signal applied to the variable resistance elements, a second detection unit that detects a current flowing through the reference array unit, based on the input signal applied to the reference resistance element, and a correction calculation unit that performs a predetermined calculation on the output from the first detection unit, based on the output from the second.

A gate driver system for a multi-phase inverter includes a gate controller, a gate driver circuit, and a hybrid switch power module integrated into a phase leg of the multi-phase inverter. The hybrid switch power module includes a first semiconductor switch connected in parallel with a second semiconductor switch. The first semiconductor switch has first conduction characteristics, while the second semiconductor switch has second performance characteristics. The gate driver circuit includes a gate driver, a first variable resistance circuit, and a second variable resistance circuit. The first variable resistance circuit is powered by a first low-voltage DC power bus, while the second variable resistance circuit is powered by a second low-voltage DC power bus.The first variable resistance circuit is connected to a first gate of the first semiconductor switch, while the second variable resistance circuit is connected to a second gate of the second semiconductor switch.

A semiconductor device may include: a first conductive line; a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line; a variable resistance layer disposed over the first conductive line and below the second conductive line; at least one of a first dielectric layer or a second dielectric layer; at least one of a first contact or a second contact; and at least one of a first doped selector layer or a second doped selector layer.

The invention discloses a high-side driving circuit, an electronic device, a vehicle and a control method. False triggering of a short-circuit protection mechanism is avoided. The high-side driving circuit comprises a power distribution circuit, a sampling circuit and a fault protection circuit, the power distribution circuit comprises a PMOS transistor and a first resistance circuit; the grid electrode of the PMOS tube is grounded through the first resistance circuit, the drain electrode of the PMOS tube is connected with a load, and the source electrode of the PMOS tube and the input end of the fault protection circuit are connected with a power supply; the output end of the fault protection circuit is connected with the grid electrode of the PMOS tube; the sampling circuit is connected with the drain electrode of the PMOS tube and the ground; the output end of the sampling circuit and the control end of the fault protection circuit are connected to the control unit; the control unit judges whether load short circuit occurs or not according to the sampling voltage, if not, the fault protection circuit is forbidden to output voltage, and if yes, the fault protection circuit is controlled to convert input voltage into target voltage to be output; the PMOS tube is in a variable resistance region when the fault protection circuit has no voltage output, and enters a cut-off region when the PMOS tube outputs a target voltage.

The invention discloses a communication system and a communication device. The communication system comprises a bus, a resistor module, a temperature sensor and a controller. And the bus is connected with the equipment. The resistance module is disposed on a communication line between the bus and the device, the resistance module including a variable resistor. The temperature sensor is used for detecting the temperature of the resistor module. The controller determines the current resistance value of the resistor module based on the temperature detected by the temperature sensor so as to adjust the resistance value of the variable resistor, so that the resistance of the bus is consistent with the resistance of the communication line. Therefore, the communication system can automatically adjust the resistance value of the variable resistor according to the change of the ambient temperature to achieve impedance matching, thereby avoiding oscillation of signals in a bus and a communication line, further improving the communication reliability of the communication system, and ensuring the normal operation of the communication system.

The invention provides a self-adaptive ripple suppression circuit based on an MOSFET, and relates to the technical field of electronic circuits. The circuit comprises an input alternating current end EMC filtering surge protection circuit, a rectification circuit, an absorption protection filtering circuit, a clamping absorption circuit, a detection protection circuit, a control circuit, a power follow current circuit, an output filtering circuit, a stroboflash removing circuit and an LED load circuit which are connected in sequence. Under the condition that the MOSFET self-adaptive ripple suppression circuit is in a working state, voltage at the two ends of the sampling resistor is fed back to a grid electrode and a source electrode of the MOS tube, on-resistance of the MOS tube is adjusted through change of the sampling voltage on the basis of the characteristic that the MOS tube works in a variable resistance area, and output current ripples are dynamically suppressed. The circuit has excellent adaptive capacity, can dynamically suppress output current ripples in a wide load range through a simple simulation negative feedback loop, and is quick in response.

Embodiments of the present application relate to the technical field of circuits, and provide a boost circuit and an electronic device, which can solve the problem of a device being easily damaged in a surge voltage scenario. The boost circuit comprises: a first inductor and a second inductor; at least two first switch transistors, which are sequentially connected in series between a second end of the second inductor and a positive electrode of a busbar; at least two second switch transistors, which are sequentially connected in series between the second end of the second inductor and a negative electrode of the busbar; and a first capacitor which is electrically connected between a first node and a corresponding second node. At least one of the at least two first switch transistors and the at least two second switch transistors is connected in parallel with a corresponding variable resistor device, the variable resistor device being a device which changes from a high resistance state to a conducting state when the voltage difference between two ends exceeds a voltage threshold. The at least two first switch transistors and the at least two second switch transistors are used for cutting off when a current on the first inductor exceeds a current threshold.

The invention discloses an impedance matching method and system for chip testing, electronic equipment and a medium, and relates to the technical field of data processing. The method comprises the following steps: establishing electrical connection between a test probe and a to-be-tested chip test point, and sending a preset detection signal; acquiring incident power and reflection power of the detection signal; calculating a first signal reflection coefficient based on the incident power and the reflection power, and determining an impedance deviation value and an adjustment direction according to a difference value between the first signal reflection coefficient and a preset standard reflection coefficient; determining a parameter adjustment step length according to the impedance deviation value; sequentially adjusting a variable resistor, a variable capacitor and a variable inductor in the impedance matching network according to the step length and the adjusting direction; detecting a second signal reflection coefficient when the impedance real part and imaginary part of the variable element reach the target range; and judging whether the second signal reflection coefficient converges to a preset range, and if yes, taking the current matching network parameter as an impedance matching result. By implementing the technical scheme provided by the invention, the impedance matching accuracy of the chip test can be improved.

Circuits and methods include amplification circuitry coupled to a plurality of input signal paths and an output signal path and a unified signal path combining a feedback path couplable between a feedback node in the output signal path and the input signal path via a plurality of input switches and a passive gain path couplable between the feedback node in the output signal path and one or more input signal paths through the input switch. The circuit may include a first capacitor and a variable resistor coupled in series and a second capacitor coupled in series with a feedback path switch and a power supply rejection resistor. The passive gain path may further include a shunt switch coupled in series between a plurality of bypass switches to form a T-switch. A fast charging switch may be configurable to couple a second capacitor to a reference potential during a state change of the unified signal path.

A variable resistance memory device includes a memory cell structure on a substrate, the memory cell structure including conductive layers, each of the conductive layers including conductive lines spaced apart from each other in a direction parallel to a top surface of the substrate, and memory cell arrays alternatingly stacked with the conductive layers in a first direction perpendicular to a top surface of the substrate, a first peripheral circuit layer between the substrate and the memory cell structure, the first peripheral circuit layer including first transistors, and a second peripheral circuit layer between the first peripheral circuit layer and the memory cell structure, the second peripheral circuit layer including second transistors, and the second transistors including core transistors that are connected to corresponding ones of the conductive lines.

An semiconductor device may include a first conductive line; a second conductive line disposed to be spaced apart from the first conductive line; a variable resistance layer disposed between the first conductive line and the second conductive line; and an electrode layer which is disposed at least one of a first location between the first conductive lines and the variable resistance layer, or a second location between the variable resistance layer and the second conductive lines and includes a thickness dependent metal-insulator transition (TDMIT) material that exhibits an electrical resistance depending on a thickness of the TDMIT material.

In one example, a system comprises a vector-by-matrix multiplication array comprising non-volatile memory cells arranged into rows and columns; and an output block coupled to the vector-by-matrix multiplication array to receive current from the columns of the array, the output block comprising a current-to-voltage converter to receive current from one or two columns and convert the current into a voltage, the current-to-voltage converter comprising one or more variable resistors configurable to adjust the range of the voltage; and an analog-to-digital converter to convert the voltage into digital bits.

A wearable device comprising a transmitter coil having variable transmission resistance, a first transmission impedance, and a second transmission impedance; an implanted device, comprising a receiver coil having a variable reception resistance, a first reception impedance, and a second reception impedance; wherein the transmitter coil can wirelessly transmit information over a variable frequency to the receiver coil when the variable resistance of the transmitter coil is tuned to the variable resistance of the receiver coil, the transmitter coil is configured to the first transmission impedance, and the receiver coil is configured to the first reception impedance; wherein the transmitter coil can wirelessly transmit power to the receiver coil when the transmitter coil is configured to the second transmission impedance and the receiver coil is configured to the second reception impedance; and wherein the transmitter coil can wirelessly transmit to the receiver coil of the implanted device using a magnetoquasistatic field.

The present application relates to the field of cable branch box, specifically relates to a kind of integrated cable branch box, including box, door body hinged on the box;Handle assembly for eliminating human body static electricity is provided on the door body;The beneficial effects of the present application are that: in actual use, personnel when opening door body, need to pull handle main body with hand, hand needs to contact pressure plate, i.e. hand and electrode contact, at this time human body-electrode-wire one-variable resistance component-ground electrode-ground forms communication, to carry out the static electricity of human body into ground, realize the purpose of human body static electricity removal;At the same time, due to the need to pull handle main body when opening door body, and the operation of pulling handle main body is human body static electricity removal operation, so it can prevent personnel from forgetting to carry out human body static electricity removal due to forget.

A resistance-to-frequency, resistance-to-time converter including a first CFOA having an inverting input X1, a non-inverting input Y1 connected to an internal output Z1, an internal output W1 and an external output V0; a second CFOA having an inverting input X2 connected to resistor R3, a non-inverting input Y2 connected to resistor R2 and the Y1, an internal output Z2 connected to a capacitor C, an internal output W2 and an external output Vtr; a third CFOA having an inverting input X3 connected to a variable resistor RT, a non-inverting input Y3 connected to the Vtr, an internal output Z3 connected to a variable resistor RF, an internal output W3 and an external output V1 connected by a resistor R1 to the X1. Each CFOA is voltage saturated. The V0 is a square wave with period T proportional to RT / RF and a frequency of oscillation f proportional to RF / RT.

A trailer light monitoring module is configured to electrically couple with lights on a trailer and include an input configured to receive electrical power from a battery; an output configured to electrically couple with lights on a trailer and selectively communicate the electrical power from the battery; a learning button, the activation of which determines a quantity of possible channels through which trailer lights could receive electrical power, and also determines how many of the quantity of possible channels actually receive electrical power; and a plurality of channel diagnostic blocks each including a tunable current sensor having a variable resistor that is tunable based on an output voltage received.

A semiconductor device may include: a first conductive line including an opening passing through the first conductive line; a second conductive line disposed over the first conductive line and spaced apart from the first conductive line; a first electrode layer buried in the opening; a selector layer disposed in the opening and surrounding side surfaces of the first electrode layer; and a variable resistance layer disposed over the selector layer and the first electrode layer.

The invention provides a capacitor surge current suppression circuit and method suitable for input voltage abrupt change, the circuit comprises an energy storage capacitor, a variable resistance circuit, a load and a power supply, the variable resistance circuit and the energy storage capacitor are connected as a whole, and then the variable resistance circuit and the load are connected to the power supply in parallel; a detection resistor is introduced into the variable resistance circuit to construct a threshold triggering mechanism, and when the surge current exceeds a set threshold, the impedance of the variable resistance circuit is dynamically adjusted to effectively suppress the surge current of the capacitor. The circuit is simple, the cost is low, the surge current can be restrained when equipment is powered on for the first time, the high-resistance state can be automatically switched when the input voltage changes suddenly at will, the surge current possibly generated in the follow-up process is continuously restrained, the protection range is remarkably widened, and the reliability and safety of a system under the complex working conditions such as voltage fluctuation are improved.

A resistance band exercise machine for performing various exercises. An embodiment includes a housing for a cable-pulley variable resistance system. Some embodiments are configured to receive one or more safety bars to set a starting position of an exercise. Some embodiments include a training partner assistantship feature for a training partner to assist the user by imparting a secondary force on the machine. The configuration of the cable-pulley variable resistance system may be in any manner based on the exercise. In some embodiments, a user performs an exercise on the resistance band exercise machine to overcome a primary (e.g., resistance bands) and secondary (e.g., springs) sources of variably increasing resistance from the cable-pulley variable resistance system.

The application discloses an anode intelligent protection module, and belongs to the field of water heaters. The anode intelligent protection module is applied to a water heater, and a variable resistor is arranged. An anode rod of the water heater is connected with an inner container of the water heater through the variable resistor. The variable resistor can increase the resistance value according to the increase of the water temperature in the inner container. The application further discloses a water heater which comprises the anode intelligent protection module. The application can keep the anode rod, the inner container and the water stored in the inner container with a basically unchanged resistance, and can make the anode rod meet the minimum protection potential in a high-temperature environment, thereby reducing the loss of the anode rod caused by the decrease of the resistance after the internal water is heated.

Embodiments of the present application provide an MRAM device, comprising: a first dielectric layer located above a substrate and having a first opening; a second dielectric layer located above the first dielectric layer and having a second opening; a variable resistance memory cell comprising a first electrode, a second electrode, and a magnetic tunnel junction layer located between the first electrode and the second electrode, the first electrode located in the first opening and having a rectangular cross-section, a top surface of the first electrode in contact with a bottom surface of the magnetic tunnel junction layer, the second electrode and the magnetic tunnel junction layer located in the second opening; the magnetic tunnel junction layer having a U-shaped cross-section and surrounding sidewalls and a bottom surface of the second electrode; a top surface of the second electrode coplanar with a top surface of the second dielectric layer; the second dielectric layer comprising an etch stop layer and an intermediate layer located above the etch stop layer, a peripheral width of the first electrode less than or equal to a peripheral width of the U-shaped cross-section of the magnetic tunnel junction layer. Embodiments of the present application relate to a method of forming an MRAM device.

The invention relates to the technical field of medical instruments, and provides a temperature control circuit, a temperature control device and a temperature control method.The temperature control circuit comprises a main control unit and a temperature adjusting unit, the temperature adjusting unit comprises a temperature adjusting module and a triode, and the output end of the main control unit is connected with the input end of the temperature adjusting module; the output end of the temperature adjusting module is connected with the base electrode of the triode. The main control unit is used for outputting a target voltage to the temperature adjusting module; the temperature adjusting module is provided with a variable resistor, and the resistance value of the variable resistor is increased along with the temperature rise of the target position; and the triode is used for receiving the trigger current from the temperature adjusting module and is in a conducting state to release heat. In the temperature regulation and control process, large temperature fluctuation changes cannot occur, the circuit is simple, traditional heating components are omitted, and accurate control is achieved.

The invention provides a PCB, a digital control method and device for dynamically adjusting power supply voltage, a storage medium and electronic equipment. The digital control method comprises the following steps: initializing a PCB (Printed Circuit Board) to enable a power supply chip to output a preset voltage U1; acquiring a temperature value of an N point on the PCB; when the temperature value of any point in the N point temperature values exceeds a preset temperature threshold value, voltage-temperature remapping calculation is automatically started; voltage-temperature remapping calculation is carried out under the constraint condition that the load power is kept constant; converting a target voltage value U2 calculated by voltage-temperature remapping into a corresponding digital control instruction and sending the digital control instruction to a variable resistance network; and the self equivalent impedance is changed through the variable resistance network so as to adjust the output voltage of the power supply chip to a target voltage value U2. According to the invention, the PCB temperature signal is used as the primary input of control, and once the temperature of any point on the PCB is detected to exceed the preset temperature threshold value, the load current is reduced by increasing the power supply voltage, so that the dielectric loss and conductor loss of the PCB are inhibited.

A semiconductor device may include: first conductive lines; second conductive lines disposed on the first conductive lines to be spaced apart from the first conductive lines; selector layer disposed between the first conductive lines and the second conductive lines; a variable resistance layer disposed between the first conductive lines and the second conductive lines; and a first electrode layer including graphene and disposed between the variable resistance layer and the selector layer.

The application relates to a voltage measuring device and method of a three-phase common tank GIS device, which comprises a basin type insulator, an induction cylinder and a collection board card, the induction cylinder is composed of a metal inner wall and a metal outer wall fixed by a structure support, the induction cylinder is fixed in a hole of the basin type insulator, the collection board card is connected with the metal inner wall and the metal outer wall of the induction cylinder respectively, and the collection board card is used for reducing the voltage of the three-phase common tank GIS device. The technical scheme provided by the application omits the high-voltage capacitor, the medium-voltage capacitor and the intermediate transformer in the traditional capacitor voltage division mutual inductor, and has no ferromagnetic resonance problem; the influence of the coupling capacitor between the phase-to-phase conductive rods on the phase measurement is eliminated, independent measurement of three phases is realized; the influence of the induction capacitor formed by the metal inner wall and the metal outer wall and the induction capacitor formed by the metal outer wall and the ground on the circuit is eliminated, and the accuracy of the measuring device is ensured by adjusting the variable resistor on the collection board card.

The utility model discloses a cable grounding fault troubleshooting device, and relates to the technical field of cable detection devices, the cable grounding fault troubleshooting device comprises an adjustable electric transducer, a variable resistance box and a clip-on ammeter, the variable resistance box is connected in series with the output end of the adjustable electric transducer, and the output voltage of the adjustable electric transducer is 0V-36V; compared with the prior art, the device is simple in structure and convenient to use, fault points can be quickly found, and the safety of maintenance personnel and equipment can be ensured by adopting the adjustable transformer with the output voltage of 0V-36V.