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32903results about How to "Increase resistance" patented technology

Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof

A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.
Owner:KOICHI IND PROMOTION CENT +1

Thin film transitor substrate and method of manufacturing the same

InactiveUS20080258143A1Increases process time and leakage current and serial contact resistanceDegrading property of TFTTransistorSemiconductor/solid-state device manufacturingOxide semiconductorOxide
A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.
Owner:SAMSUNG ELECTRONICS CO LTD

Axmi-066 and axmi-076: delta-endotoxin proteins and methods for their use

Compositions and methods for conferring pesticidal activity to bacteria, plants, plant cells, tissues and seeds are provided. Compositions comprising a coding sequence for pesticidal polypeptides are provided. The coding sequences can be used in DNA constructs or expression cassettes for transformation and expression in plants and bacteria. Compositions also comprise transformed bacteria, plants, plant cells, tissues, and seeds. In particular, isolated pesticidal nucleic acid molecules are provided. Additionally, amino acid sequences corresponding to the polynucleotides are encompassed. In particular, the present invention provides for isolated nucleic acid molecules comprising nucleotide sequences encoding the amino acid sequence shown in SEQ ID NO:5, 2, or 10, the nucleotide sequence set forth in SEQ ID NO:4, 1, 3, 4, 6, 9, or 11, or the nucleotide sequence deposited in a bacterial host as Accession No. B-50045, as well as variants and fragments thereof.
Owner:ATHENIX

Gapped oligonucleotides

Oligonucleotides and other macromolecules are provided which have increased nuclease resistance, substituent groups for increasing binding affinity to complementary strand, and subsequences of 2′-deoxy-erythro-pentofuranosyl nucleotides that activate RNase H. Such oligonucleotides and macromolecules are useful for diagnostics and other research purposes, for modulating the expression of a protein in organisms, and for the diagnosis, detection and treatment of other conditions susceptible to oligonucleotide therapeutics.
Owner:IONIS PHARMA INC

Multilayered material and method of producing the same

A multilayered material is provided which includes a substrate and a silicon-containing film formed on the substrate, wherein the silicon-containing film has a nitrogen-rich area including silicon atoms and nitrogen atoms, or silicon atoms, nitrogen atoms, and an oxygen atoms and the nitrogen-rich area is formed by irradiating a polysilazane film formed on the substrate with an energy beam in an atmosphere not substantially including oxygen or water vapor and denaturing at least a part of the polysilazane film. A method of producing the multilayered material is also provided.
Owner:MITSUI CHEM INC

Conveyor system

In most cases, a hot, corrosive atmosphere is created in, for example, a semiconductor wafer processing chamber. When an arm including belts, such as steel belts, is moved into such a semiconductor wafer processing chamber, the belts are exposed to the hot, corrosive atmosphere. Belts, such as steel belts, have limited heat resistance and corrosion resistance and the hot, corrosive atmosphere in the processing chamber shortens the life of the belts. A carrying device of the present invention has a frog leg type arm (3) and a wafer holder (4) connected to the frog leg type arm (3). The wafer holder (4) is pivotally connected to front end parts of a first front arm (8A) and a second front arm (8B) by coaxial joints (10). The wafer holder (4) is linked to the first front arm (8A) and the second front arm (8B) by a posture maintaining linkage (5) including two antiparallel linkages capable of controlling the turning of the wafer holder (4) relative to the first and the second front arms (8A, 8B).
Owner:TOKYO ELECTRON LTD

Transistor and method of fabricating the same

A transistor and a method of fabricating the same are provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer.
Owner:JUSUNG ENG

Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a carbonitride containing surface and process for manufacture thereof.
Owner:LAM RES CORP

Method of Making Showerhead for Semiconductor Processing Apparatus

A method of making a showerhead for a semiconductor processing apparatus is disclosed. In one embodiment, the method includes providing a substrate; forming first holes in the substrate; forming a protective film on the substrate, where the protective film covers sidewalls of the first holes; and forming second holes in the substrate, where a part of the protective film within the first holes is removed. In another embodiment, the method includes providing a substrate; forming islands on the substrate; forming a protective film on the substrate, where the protective film does not cover the tops of the islands; and forming holes in the islands.
Owner:HERMES EPITEK

Rigid porous carbon structures, methods of making, methods of using and products containing same

This invention relates to rigid porous carbon structures and to methods of making same. The rigid porous structures have a high surface area which are substantially free of micropores. Methods for improving the rigidity of the carbon structures include causing the nanofibers to form bonds or become glued with other nanofibers at the fiber intersections. The bonding can be induced by chemical modification of the surface of the nanofibers to promote bonding, by adding "gluing" agents and / or by pyrolyzing the nanofibers to cause fusion or bonding at the interconnect points.
Owner:HYPERION CATALYSIS INT
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