The invention provides a method for growing an oversized
diamond polycrystalline film. The method comprises the following steps: S1, cleaning and
drying a
monocrystalline silicon wafer at
room temperature; s2, carrying out pretreatment
seed crystal on the
monocrystalline silicon wafer, covering
a diamond nanocrystalline layer on the
silicon surface, and putting the
monocrystalline silicon wafer into MPCVD (
Microwave Plasma Chemical Vapor Deposition) equipment; s3, the cavity is vacuumized, then
hydrogen is introduced for purging, and then vacuumizing is conducted again; then
hydrogen is introduced, the air pressure is regulated and controlled to be 5-8
torr, and starting is started to ignite the
plasma; s4, the
microwave power is increased to 70 KW to 75 KW at the speed of 4.5 KW / min to 5.5 KW / min, the air pressure is increased to 165
torr to 180
torr at the speed of 10 torr / min to 30 torr / min, and the temperature is increased to 900 DEG C to 950 DEG C at the speed of 60 DEG C / min; s5, introducing growth gas, wherein the flow rate of
hydrogen is 5000-6000 sccm, the flow rate of
methane is 100-150 sccm, the flow rate of
oxygen is 5-8 sccm, the flow rate of
nitrogen is 1-2 sccm, and the flow rate of
argon is 800-1000 sccm; and S6, after the growth is finished, cooling at a rate of 30 DEG C / min, and introducing
nitrogen into the cavity for vacuum breaking until the temperature is reduced to
room temperature, so as to obtain the oversized
diamond polycrystalline film. The size of the oversized
diamond polycrystalline film reaches 12 inches.