The invention discloses a three-dimensional micro-LED
chip with a novel heat dissipation structure and a
dielectric layer manufacturing method. The
chip comprises a
silicon substrate, a red micro-led, a green micro-led and a blue micro-led, the
silicon substrate, the red micro-led, the green micro-led and the blue micro-led are sequentially stacked, and a
dielectric layer is arranged between any two of the
silicon substrate, the red micro-led, the green micro-led and the blue micro-led; a plurality of
copper-plated through holes are formed in the
dielectric layer, and the conductive circuits of the red micro-LED, the green micro-LED and the blue micro-LED penetrate through the
copper-plated through holes and then are connected with the silicon substrate; the method comprises the following steps: patterning
a diamond film and plating
copper on a through hole in manners of
etching,
electroplating and the like, so as to manufacture a light-transmitting and heat-conducting
dielectric layer; through the stacking structure of the silicon substrate and the three-color micro-LEDs and the design of the copper-plated through holes in the
dielectric layer, heat conduction and electric conduction channels are formed in the vertical direction, meanwhile, efficient heat dissipation and
electrical isolation are achieved through the
diamond film, the problems that in a traditional scheme, heat dissipation paths are insufficient, materials are contradicted, and the light emitting rate is reduced are solved, and the light emitting efficiency is improved. The
LED lamp has the advantages of improving a vertical heat dissipation path, giving consideration to
electrical isolation and
thermal conductivity and improving light emitting efficiency.