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50results about How to "Large thermal conductivity" patented technology
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Enhancement-Mode III-N Devices, Circuits, and Methods
ActiveUS20070278518A1High breakdown fieldHigh Power Handling CapabilitySemiconductor devicesPhotoresistIon implantation
A method of fabricating AlGaN / GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN / GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN / GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).
Owner:THE HONG KONG UNIV OF SCI & TECH
Monolithic Integration of Enhancement- and Depletion-mode AlGaN/GaN HFETs
ActiveUS20070228416A1Wide bandgapHigh breakdown fieldTransistorSolid-state devicesHeterojunctionEtching
A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN / GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.
Owner:THE HONG KONG UNIV OF SCI & TECH
Light bulb shaped lamp and lighting apparatus
ActiveUS20130235592A1Hold steadySuppress stressPlanar light sourcesNon-electric lightingLight equipmentEngineering
A light bulb shaped lamp according to the present invention includes: a hollow globe; an LED module including a base platform and an LED chip mounted on the base platform, the LED module being provided in the globe; a lead wire for supplying power to the LED module; and a stem extending toward the interior of the globe, in which the base platform is directly fixed to the stem.
Owner:SIGNIFY HLDG BV
Enhancement-mode III-N devices, circuits, and methods
ActiveUS7932539B2High breakdown fieldHigh Power Handling CapabilitySemiconductor devicesResistPhotoresist
A method of fabricating AlGaN / GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN / GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN / GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).
Owner:THE HONG KONG UNIV OF SCI & TECH
Composite material having high thermal conductivity and low thermal expansion coefficient, and heat-dissipating substrate, and their production methods
InactiveUS20040241447A1Improve adhesionLarge thermal conductivitySemiconductor/solid-state device detailsSolid-state devicesThermal transmittanceThermal conductivity
A composite material having a high thermal conductivity and a small thermal expansion coefficient, which is obtained by impregnating a porous graphitized extrudate with a metal; the composite material having such anisotropy that the thermal conductivity and the thermal expansion coefficient are 250 W / mK or more and less than 4x10<-6> / K, respectively, in an extrusion direction; and that the thermal conductivity and the thermal expansion coefficient are 150 W / mK or more and 10x10<-6> / K or less, respectively, in a direction perpendicular to the extrusion direction.
Owner:HITACHI METALS LTD
Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN / GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.
Owner:THE HONG KONG UNIV OF SCI & TECH
Semiconductor laser device and method of manufacturing the same as well as optical pickup
InactiveUS20090323750A1Suppression temperatureReduce thermal degradationOptical wave guidanceLaser detailsOptical pickupBlocking layer
A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.
Owner:SANYO ELECTRIC CO LTD
Measuring machine
InactiveUS6370787B1Uniform temperature distributionLarge thermal conductivityUsing electrical meansElectric/magnetic contours/curvatures measurementsEngineeringAlloy
A measuring machine having a base (10), a touch signal probe (P), a moving mechanism (20) for retaining the touch signal probe (P) movably in three-dimensional directions, and a controller (60) for controlling a movement of the moving mechanism (20) and for acquiring coordinates value of respective axes based on a contact signal from the touch signal probe (P) to measure a dimension etc. of a workpiece based on the coordinates value is provided. Main structural members structuring the moving mechanism (20), more specifically, a column (21), a supporter (22), a X-beam (23), a Z-axis structure (25) and a Z-axis spindle (26) are made of aluminum or aluminum alloy including aluminum as main component, which has large thermal conductivity, thereby making temperature distribution uniform to improve geometrical accuracy.
Owner:MITUTOYO CORP
Resin-molded component for signal reader and method for molding thereof
InactiveUS7704408B2Light weightGood vibration reduction effectLiquid crystal compositionsFilamentary/web record carriersLiquid crystallinePolymer science
The present invention provides a resin-molded component for signal reader, which is light in weight and is able to improve the vibration damping property and to increase the resonance frequency, and which is excellent in heat dissipation. Specifically, it provides a resin-molded component for signal reader structured by 55 to 75% by weight of liquid crystalline polymer (A) composed of structural units expressed by general formulae (I) through (IV):—O—Ar1—CO— (I)—CO—Ar2—CO— (II)—O—Ar3—O— (III)—O—Ar4—CO— (IV)(where, Ar1 is 2,6-naphthalene group, Ar2 is selected from 1,2-phenylene group, 1,3-phenylene group, and, 1,4-phenylene group, Ar3 is selected from 1,3-phenylene group, 1,4-phenylene group, and p,p′-polyphenylene group, and Ar4 is 1,4-phenylene group); 20 to 10% by weight of inorganic hollow sphere (B1); and 25 to 15% by weight of fibrous inorganic filler (B2), and has 1.4 or smaller specific gravity d, 0.5 W / m·K or larger thermal conductivity λ, and 10 GPa or larger flexural modulus.
Owner:POLYPLASTICS CO LTD
Semiconductor device
InactiveUS20100007013A1Good spread effectImprove efficiencySemiconductor/solid-state device detailsSolid-state devicesEngineeringSemiconductor
A semiconductor device, comprising: a semiconductor element 20 having a rectangular two-dimensional geometry and serving as a heat source; and a heat sink section 25 having the semiconductor element 20 mounted thereon, wherein a relation among the directional components of said thermal conductivity is: Kzz≧Kyy>Kxx, where directional components of three-dimensional thermal conductivity of the heat sink section 25 in X, Y and Z directions are determined as Kxx, Kyy and Kzz, and where the longer side direction of the semiconductor element 20 is defined as X direction, the shorter side direction thereof is defined as Y direction and the thickness direction is defined as Z direction.
Owner:NEC CORP
Prismatic sealed rechargeable battery, battery module, and battery pack
ActiveUS20070134550A1Improve cooling effectIncrease powerPrimary cell to battery groupingCharging stationsElectrolyteElectrical and Electronics engineering
A prismatic sealed rechargeable battery includes a substantially prismatic battery case that accommodates an electrode plate assembly and an electrolyte solution. The battery case is formed of metal. On a side face of the battery case, a thin plate is provided which has a plurality of protruding portions formed in parallel at appropriate intervals. The protruding portion and the side face form spaces opened at both ends therebetween. The thin plate is bonded to the side face of the battery case by making flat portions between the protruding portions into surface-contact with the side face, thereby improving cooling capability of the battery.
Owner:PANASONIC CORP +1
Thermoelectric converter and method of manufacturing same
InactiveUS20100212328A1Improve performanceLow thermal conductivityThermoelectric device manufacture/treatmentTransportation and packagingMean free pathAlloy
A thermoelectric converter made of a thermoelectric conversion material is provided in which metal or alloy particles having an average particle size of 1 to 100 nm are dispersed, wherein at least a part of the metal or alloy particles are dispersed at a distance not more than the mean free path of the phonon of the thermoelectric conversion material.
Owner:TOYOTA JIDOSHA KK
Light source device and projector
InactiveUS20050270493A1Improve thermal conductivitySufficient and stable emission brightnessTelevision system detailsColor signal processing circuitsEngineeringThermal conduction
A light source device is provided comprising: a light-emitting element; a support member having the light-emitting element flip chip mounted thereto; and a thermally conductive filling agent between the light-emitting element and the support member. By injecting the filling agent between the light-emitting element and the support member, the thermal conduction is supplemented by the filling agent. As such, heat generated by the light-emitting element can be efficiently removed outside the light source device.
Owner:SEIKO EPSON CORP
Heating apparatus and method
InactiveUS20010052246A1Improve thermal processingIncreasing heat capacityGlass pressing apparatusHot plates heating arrangementsThermal transmittanceThermal conductivity
When an object to be heated is heated without temperature nonuniformity in its heated surface, unwanted thermal deformation can be suppressed, and thermal processing precision can be improved. For this purpose, a heat transfer plate for heating a plate-like object to be heated, and a base plate are stacked. A rod heater as a heat source is inserted in the heat transfer plate. The heat transfer plate has a larger thermal conductivity and smaller creep than the base plate.
Owner:CANON KK
Non-pneumatic tire
ActiveUS20170057288A1Prevent degradationIncreased durabilityNon-inflatable tyresTyre tread bands/patternsEngineeringRoad surface
Provided is a non-pneumatic tire having excellent durability performance. This non-pneumatic tire is provided with an annular tread portion which contacts the road surface, an annular inner peripheral portion which is positioned radially inward of the tread portion, and multiple linking units which join the tread portion and the inner peripheral portion. The tread portion includes a first portion which contacts the road surface, and a second portion which includes an inner peripheral surface facing the inner peripheral portion. The thermal conductivity of the second portion is greater than that of the first portion.
Owner:SUMITOMO RUBBER IND LTD
Flip-chip bonding structure of light-emitting element using metal column
InactiveUS20060138444A1Improve cooling efficiencyLarge thermal conductivityLaser detailsSolid-state devicesEmission efficiencyMetal
A flip-chip bonding structure of a light-emitting element is provided. The structure improves a heat emission efficiency by using a metal column having a high thermal conductivity instead of a solder bump. The structure includes a light-emitting element, a sub-mount, and a metal column. The metal column connects the light-emitting element with the sub-mount electrically and thermally.
Owner:SAMSUNG ELECTRO MECHANICS CO LTD
Short arc type high voltage electrical discharge electrode, short arc type high voltage electrical discharge tube, short arc type high voltage electrical discharge light source apparatus, and their manufacturing methods
InactiveUS20070108911A1High yieldImproved uniform propertyHigh-pressure discharge lampsSolid cathode detailsHigh pressureMaterials science
A short arc type high voltage electrical discharge electrode includes an electrode center spindle made from a refractory metal and having a tip; and an electrode main body made from a refractory metal and disposed at the tip of the electrode center spindle. The electrode center spindle is subjected to final sintering, the electrode main body is subjected to temporary sintering, and the final-sintered electrode center spindle is inserted into a center hole of the temporary-sintered electrode main body so as to form combination which is sintered together.
Owner:SONY CORP
Thermoelectric converter and method of manufacturing same
InactiveUS8394284B2Improve performanceLow thermal conductivityThermoelectric device manufacture/treatmentTransportation and packagingMean free pathAlloy
A thermoelectric converter made of a thermoelectric conversion material is provided in which metal or alloy particles having an average particle size of 1 to 100 nm are dispersed, wherein at least a part of the metal or alloy particles are dispersed at a distance not more than the mean free path of the phonon of the thermoelectric conversion material.
Owner:TOYOTA JIDOSHA KK
Flexible electronic device and production method of the same
ActiveUS7271415B2Good reproducibilityExcellent characteristicsLiquid crystal compositionsTransistorTectorial membraneFlexible electronics
A flexible electronic device excellent in heat liberation characteristics and toughness and a production method for actualizing thereof in low cost and with satisfactory reproducibility are provided. A protection film is adhered onto the surface of a substrate on which surface a thin film device is formed. Successively, the substrate is soaked in an etching solution to be etched from the back surface thereof so as for the residual thickness of the substrate to fall within the range larger than 0 μm and not larger than 200 μm. Then, a flexible film is adhered onto the etched surface of the substrate, and thereafter the protection film is peeled to produce a flexible electronic device.
Owner:HANNSTAR DISPLAY CORPORATION
Light source device and projector
InactiveUS7384153B2Improve thermal conductivitySufficient and stable emission brightnessTelevision system detailsColor signal processing circuitsEngineeringThermal conduction
A light source device is provided comprising: a light-emitting element; a support member having the light-emitting element flip chip mounted thereto; and a thermally conductive filling agent between the light-emitting element and the support member. By injecting the filling agent between the light-emitting element and the support member, the thermal conduction is supplemented by the filling agent. As such, heat generated by the light-emitting element can be efficiently removed outside the light source device.
Owner:SEIKO EPSON CORP
Container for preserving blood products at cryogenic temperatures
InactiveUS20070257039A1High strengthEliminate the effects ofInternal framesDead animal preservationWhole blood productCryopreservation
Metallic containers with high toughness characteristics are utilized to cryopreserve blood products and more particularly neonatal stem and progenitor cells at cryogenic temperatures. Metallic containers with high toughness and strength characteristics are durable at low temperatures and are capable to endure high stresses and impacts at −196° C. These containers are better fit to preserve blood products without compromising their sterility or their medical integrity. Methods for fabricating metallic containers are also disclosed.
Owner:CHAMMAS JACQUES
RF heater arrangement for substrate heating apparatus
InactiveUS7985295B1Minimizing levitationImprove thermal conductivitySemiconductor/solid-state device manufacturingChemical vapor deposition coatingLevitationSusceptor
An RF heating system for a substrate or substrates including a susceptor for supporting the substrate; one or more RF heating coils; and a platen disposed between the RF heating coil and the substrate. The platen is constructed of materials that become heated under RF energy, which will then radiate heat into the susceptor and the substrate. In this way the susceptor need not be constructed of materials that become heated under RF energy thus minimizing levitation. The platen provides a uniform temperature profile across the substrates, benefiting from a more diffused heat source. The RF heating system may also be utilized in CVD apparatus that deposits materials on a continuous tape or roll.
Owner:STRUCTURED MATERIALS
Prismatic sealed rechargeable battery, battery module, and battery pack
ActiveUS8124270B2Increase powerImprove cooling effectPrimary cell to battery groupingCharging stationsRechargeable cellEngineering
A prismatic sealed rechargeable battery includes a substantially prismatic battery case that accommodates an electrode plate assembly and an electrolyte solution. The battery case is formed of metal. On a side face of the battery case, a thin plate is provided which has a plurality of protruding portions formed in parallel at appropriate intervals. The protruding portion and the side face form spaces opened at both ends therebetween. The thin plate is bonded to the side face of the battery case by making flat portions between the protruding portions into surface-contact with the side face, thereby improving cooling capability of the battery.
Owner:PANASONIC CORP +1
Light bulb shaped lamp and lighting apparatus
ActiveUS20130235593A1Hold steadySuppress stressNon-electric lightingPlanar light sourcesEngineeringMechanical engineering
A light bulb shaped lamp according to the present invention includes: a hollow globe; an LED module including a base platform and an LED chip mounted on the base platform, the LED module being provided in the globe; a lead wire for supplying power to the LED module; and a stem extending toward the interior of the globe, in which the base platform is directly fixed to the stem.
Owner:SIGNIFY HLDG BV
Production method of flexible electronic device
ActiveUS20050151197A1Excellent in heat liberation characteristicImprove toughnessTransistorSemiconductor/solid-state device detailsTectorial membraneFlexible electronics
A flexible electronic device excellent in heat liberation characteristics and toughness and a production method for actualizing thereof in low cost and with satisfactory reproducibility are provided. A protection film is adhered onto the surface of a substrate on which surface a thin film device is formed. Successively, the substrate is soaked in an etching solution to be etched from the back surface thereof so as for the residual thickness of the substrate to fall within the range larger than 0 μm and not larger than 200 μm. Then, a flexible film is adhered onto the etched surface of the substrate, and thereafter the protection film is peeled to produce a flexible electronic device.
Owner:HANNSTAR DISPLAY CORPORATION
SEMICONDUCTOR DEVICE INCLUDING h-BN INSULATING LAYER AND ITS MANUFACTURING METHOD
ActiveUS20160163537A1Large thermal conductivityEfficiently dissipatedSolid-state devicesSemiconductor/solid-state device manufacturingDevice materialBoron nitride
A semiconductor device includes a support substrate, an insulating layer provided on the support substrate, and a semiconductor element provided on the insulating layer. The insulating layer has a lower insulating layer consisting of amorphous boron nitride, and an upper insulating layer provided on the lower insulating layer and including amorphous boron nitride and an hexagonal system boron nitride (h-BN) particles.
Owner:STANLEY ELECTRIC CO LTD
Measuring machine
InactiveUS20020020073A1Uniform temperature distributionLarge thermal conductivityElectric/magnetic contours/curvatures measurementsUsing electrical meansEngineeringAlloy
A measuring machine having a base (10), a touch signal probe (P), a moving mechanism (20) for retaining the touch signal probe (P) movably in three-dimensional directions, and a controller (60) for controlling a movement of the moving mechanism (20) and for acquiring coordinates value of respective axes based on a contact signal from the touch signal probe (P) to measure a dimension etc. of a workpiece based on the coordinates value is provided. Main structural members structuring the moving mechanism (20), more specifically, a column (21), a supporter (22), a X-beam (23), a Z-axis structure (25) and a Z-axis spindle (26) are made of aluminum or aluminum alloy including aluminum as main component, which has large thermal conductivity, thereby making temperature distribution uniform to improve geometrical accuracy.
Owner:MITUTOYO CORP
Semiconductor device and fabricating method thereof
ActiveUS20170033190A1High pressure-resistanceHigh temperature-resistanceSemiconductor/solid-state device detailsSolid-state devicesSubject matterSilicon oxide
In accordance with various embodiments of the disclosed subject matter, a semiconductor device, and a fabricating method thereof are provided. In some embodiments, the semiconductor device comprises: a semiconductor substrate, wherein a plurality of fins are projected on a surface of the semiconductor substrate; and an insulating layer on side walls of the plurality of fins, wherein the insulating layer is located on the surface of the semiconductor substrate, a surface of the insulating layer is lower than top surfaces of the plurality of fins, and a thermal conductivity of the insulating layer is larger than a thermal conductivity of silicon oxide.
Owner:SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
Urethane foam molded product and method for producing the same
To provide a urethane foam molded product having high thermal conductivity and electric insulation and a method for producing the same. A urethane foam molded product includes a base material made of a polyurethane foam and composite particles that are blended in the base material and oriented in a mutually connected state, in which each of the composite particles includes a thermally conductive particle made of a non-magnetic body, and a magnetic particle and an insulating inorganic particle that are adhered to the surface of the thermally conductive particle through a binder. A powder of the composite particles can be produced by stirring a powder raw material containing a powder of the thermally conductive particle, a powder of the magnetic particle, a powder of the insulating inorganic particle, and the binder using a stirring granulator.
Owner:SUMITOMO RIKO CO LTD
Method for mixing powdered metal and nanocarbon material, and method for manufacturing nanocarbon/metal composite material
InactiveUS20060269435A1High strengthLarge thermal conductivityMaterial nanotechnologyTransportation and packagingNanometreMetal
A manufacturing method is provided to be used in place of a conventional mechanical alloying method. A powdered metal and a nanocarbon material are placed in an empty metal mill vessel containing no balls, and a mixture in which the powdered metal is coated with this nanocarbon material is obtained by shaking in three dimensions.
Owner:NISSEI PLASTIC IND CO LTD
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