Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer
ceramic (MLC) technology methods. Aluminum
nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods are employed for forming tunnels through lamination and
etching. A portion of the dissimilar materials are then melted within the tunnels to form a bond.
Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high
thermal conductivity metal paste. A low
thermal conductivity material is also introduced between the two high
thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal
conductivity layers by
punching vias within greensheets of predetermined thermal
conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through
screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance
thermal energy transfer. Thermoelectric devices are physically incorporated within the IC
package using MLC technology.