6845 results about "Aspect ratio" patented technology

A pattern from a patterning device is applied to a substrate. The applied pattern includes device functional areas and metrology target areas. Each metrology target area comprises a plurality of individual grating portions, which are used for diffraction based overlay measurements or other diffraction based measurements. The gratings are of the small target type, which is small than an illumination spot used in the metrology. Each grating has an aspect ratio substantially greater than 1, meaning that a length in a direction perpendicular to the grating lines which is substantially greater than a width of the grating. Total target area can be reduced without loss of performance in the diffraction based metrology. A composite target can comprise a plurality of individual grating portions of different overlay biases. Using integer aspect ratios such as 2:1 or 4:1, grating portions of different directions can be packed efficiently into rectangular composite target areas.

A three dimensional monolithic memory comprising a memory cell allowing for increased density is disclosed. In the memory cell of the present invention, a bottom conductor preferably comprising tungsten is formed. Above the bottom conductor a semiconductor element preferably comprises two diode portions and an antifuse. Above the semiconductor element are additional conductors and semiconductor elements in multiple stones of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Page layout of content items from a variety of sources is performed. A content processing system queues content items, such as user-generated blogs, tweets, social networking status updates and other postings, received from a variety of sources. Each content item comprises one or more assets from one or more asset types. The asset types include text, images, and video. A page builder retrieves items from the queue and determines the item's size constraints. A template is selected from a template database to use as a layout for the items on a page; each template has a number of slots into which content can be placed. A layout module lays out the items into the slots of the selected template based on the respective size and aspect ratio constraints of the items, in order to build a page to serve a client device.

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of any suitable confirmal dielectric deposition technique and a dry etch back. The etch back part of the process involves a single step or an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality nanolaminate dielectric gap fill operations.

Provided are novel methods of filling gaps with a flowable dielectric material. According to various embodiments, the methods involve performing a surface treatment on the gap to enhance subsequent bottom up fill of the gap. In certain embodiments, the treatment involves exposing the surface to activated species, such as activated species of one or more of nitrogen, oxygen, and hydrogen. In certain embodiments, the treatment involves exposing the surface to a plasma generated from a mixture of nitrogen and oxygen. The treatment may enable uniform nucleation of the flowable dielectric film, reduce nucleation delay, increase deposition rate and enhance feature-to-feature fill height uniformity.

Etch profile control with pulsed gas flow and its applications to etching such as anisotropic etching of high aspect ratio features and etching of self-aligned contact structures in various processes. Pulsing can be applied according to this invention to the flow rate of a gas such as an etchant gas, a gas that leads to the deposition of a protective layer, a gas that modifies the deposition of a protective layer, and a gas that modifies etching.

A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.

A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.

Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area. The preferential application of the catalyst or catalyst precursor may occur either at the top of the gap, for example to form a sacrificial mask, or at the bottom of the gap to create a seamless and void-free gap fill.

A golf club (40) having a club head (42) with a face component (60) and an aft body (61) is disclosed herein. The face component (60) has a striking plate portion (72) and a return portion (74). The aft-body (61) is composed of a crown portion (62), a sole portion (64) and optionally a ribbon section (90). The face component (60) is composed of a metal material, and the aft-body (61) is composed of a non-metal material such as a composite material or a thermoplastic material. The striking plate portion (72) preferably has an aspect ratio less than 1.7. The striking plate portion (72) preferably has concentric regions of thickness with the thickness portion in the center (102). The club head (42) has a volume in the range of 290 cubic centimeters to 600 cubic centimeters, a weight in the range of 165 grams to 300 grams, and a striking plate portion (72) surface area in the range of 4.00 square inches to 7.50 square inches. The golf club head (42) has a coefficient of restitution greater than 0.81 under test conditions such as the USGA test conditions specified pursuant to Rule 4-1e, Appendix II, of the Rules of Golf for 1998-1999.

This invention relates to materials and processes for thin film deposition on solid substrates. Silica / alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and / or trenches).

A content delivery and display solution includes a viewing application for displaying immersive images with a region of interest, in addition to conventional fixed-aspect-ratio media. The display can include the layered display of metadata, multiple windows, and images or hotspots embedded into the immersive image. The viewing application can be used for the display of either live or prerecorded images, from local or online sources.

Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

The present invention comprises a method and computer implemented system for presenting multiple virtual desktops on a display of a computer system. A “pager” window is displayed on a desktop (either real or virtual) which comprises multiple subpanes, each of which contains a scaled virtual desktop having dimensions that are proportional to, but less than the dimensions of a corresponding virtual desktop. Each scaled virtual desktop provides a representation of the corresponding full-size virtual desktop that would display one or more application windows whose content may optionally be replaced by the icon designating the application program or data file displayed therein, for sake of visual clarity. The present invention also provides a mechanism for varying the background image of virtual desktop, and thus, of each scaled virtual desktop pane, in addition to a number of enhancements to the user interface for controlling the virtual desktop environment including transparency hiding of the pager window, constant aspect ratio scaling of the pager window, mouse desktop changing with corner exclusion, display and interaction with window lists, individual pop up menus for windows, starting desktop selection, a method for moving windows between virtual desktops, a method to override virtual desktop behaviors, a method for placing child windows on the same desktop as the parent window, notification of desktop changes, tracking topmost application on other desktops, sticky monitors, and API remote control.

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and fluorine as process gases in the reactive mixture of a plasma-containing CVD reactor. The process gas also includes dielectric forming precursors such as silicon and oxygen-containing molecules.

A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.

Microneedle devices with microneedles having a truncated tapered shape are disclosed. The microneedles of microneedle devices may also have a controlled aspect ratio. Microneedle delivery apparatus are disclosed that include drivers designed to deliver microneedles at velocities that may enhance perforation of the stratum corneum while limiting the sensation of pain experienced at the delivery site.

An absorbent cellulosic sheet having variable local basis weight includes a papermaking-fiber reticulum provided with (i) a plurality of cross-machine direction (CD) extending, fiber-enriched pileated regions of relatively high local basis weight interconnected by (ii) a plurality of elongated densified regions of compressed papermaking fibers. The elongated densified regions have relatively low local basis weight and are generally oriented along the machine direction (MD) of the sheet and have an MD / CD aspect ratio of at least 1.5. The products are most preferably prepared by way of a compactive dewatering / wet crepe process.

A method and apparatus are described for fabricating a high aspect ratio MEMS device by using metal thermocompression bonding to assemble a reference wafer (100), a bulk MEMS active wafer (200), and a cap wafer (300) to provide a proof mass (200d) formed from the active wafer with bottom and top capacitive sensing electrodes (115, 315) which are hermetically sealed from the ambient environment by sealing ring structures (112 / 202 / 200a / 212 / 312 and 116 / 206 / 200e / 216 / 316).