144 results about "Thermocompression bonding" patented technology

The invention discloses an ultra-miniature patch fuse structure and a production process thereof. A fuse comprises a ceramic substrate, an inner electrode part, a terminal electrode part, a fuse wire part and a covering protection layer. An inner electrode groove is formed in the side wall of the ceramic substrate, and the inner electrode part comprises a first inner electrode and a second inner electrode; the first inner electrode and the second inner electrode are respectively provided with a fuse wire fixing groove. According to the production process, inner electrode grooves are formed in the two ends of a ceramic substrate, a first inner electrode and a second inner electrode are constructed through metallization wall-hanging treatment, a fuse part is inserted into a fuse fixing groove and connected through thermal ultrasonic or hot pressing bonding, and a protection layer is printed and cured to enhance the insulation performance. According to the invention, through cooperation of the fuse wire fixing grooves, accurate limitation and anti-drop protection of fuse wire component connection points are realized, and the structural stability and the electrical connection reliability between the fuse wire component and the first inner electrode and between the fuse wire component and the second inner electrode are improved.

The invention discloses a manufacturing method of a high-precision intelligent instrument measuring chip and a related device. The method comprises the following steps: firstly, performing multi-stage vacuum annealing and atomic layer reduction corrosion removal on lower-layer copper interconnection, introducing thermal-electric synergistic stress to convert a vacancy-rich layer into < 111 > preferred grains, and obtaining a bonding preparation surface with consistent crystal orientation; and then low-temperature copper-copper thermocompression bonding is completed in a controlled inert atmosphere, and interconnection initial thermoelectric force is intercepted in real time. The method comprises the following steps: establishing a vertical heat flow according to a space mapping power consumption sequence by driving an upper-layer functional region, collecting an interface voltage response, and extracting an interconnection Seebeck deviation through time sequence registration and differential processing; and according to a deviation result, synchronous fusing and parallel connection are implemented by using a programmable metal section of the rewiring layer, a thermoelectric balance interconnection network is constructed, and a zero drift calibration value is written in. According to the scheme, direction-dependent thermoelectromotive force is eliminated in a closed mode on the three levels of material, measurement and interconnection reconstruction, and therefore long-term zero drift stability of a measurement chain is guaranteed under the nanovolt-level noise condition.

Thermocompression bonding head fixture designs and techniques for use thereof are provided. In one aspect, an exemplary bonding head fixture includes: a workpiece contact surface; at least one recess in the workpiece contact surface; and heat passages leading into and out of the at least one recess. In another aspect, an exemplary bonding head includes: a bonding head fixture having a workpiece contact surface, at least one recess in the workpiece contact surface, and heat passages leading into and out of the at least one recess; and a heat source connected to at least one of the heat passages. Methods for use of the present bonding head fixtures are also provided.

The invention discloses a TCB thermocompression bonding multi-degree-of-freedom welding head, and relates to the technical field of thermocompression bonding, the TCB thermocompression bonding multi-degree-of-freedom welding head comprises a fixed annular plate fixed on equipment, the fixed annular plate is uniformly and rotatably connected with six telescopic pieces, the six telescopic pieces are arranged on the fixed annular plate in pairs, the end parts of the telescopic pieces are rotatably connected with a movable annular plate, and the movable annular plate is fixedly connected with the fixed annular plate. The end portions of the telescopic pieces arranged in pairs are close to the end portions of the adjacent telescopic pieces arranged in pairs, the end portions of the telescopic pieces arranged in pairs are far away from each other, the number of the telescopic pieces is six, the end portions of the two telescopic pieces are close to each other, a pressing head is fixed to the bottom end of the movable annular plate, and a wire outlet hole is formed in the pressing head. An anti-feeding piece for preventing the welding rod from retracting is arranged in the wire outlet hole; the angle of the pressure head can be adjusted through a parallel mechanism formed by the fixed annular plate, the telescopic piece and the movable annular plate, so that the force applied to the pressure head is always overlapped with the normal direction of the electrode surface of the chip, the phenomenon of slippage of the chip is avoided, and the qualification rate of the chip is ensured.

The invention provides a preparation method of a full-color Micro-LED display device, and the method comprises the steps: sequentially preparing single-color Micro-LED chip arrays and a first receiving substrate, precisely fixing the three single-color Micro-LED chip arrays at preset positions of the first receiving substrate through thermocompression bonding, and respectively removing substrates; adding a strong-viscosity light-transmitting material on one side, facing the full-color Micro-LED chip array, of the first receiving substrate, and fixing the prepared second receiving substrate on the first receiving substrate through the strong-viscosity light-transmitting material; the first receiving substrate is removed, and the reserved second receiving substrate, the strong-viscosity light-transmitting material, the full-color Micro-LED chip array and the metal bump electrodes on the Micro-LED chips form a pre-bonding module; and the pre-bonding module and the driving substrate are accurately fixed together in a thermocompression bonding mode, and preparation of the full-color Micro-LED display device is completed. According to the invention, the accuracy, stability and transfer efficiency of multi-time transfer integration of the full-color Micro-LED can be improved, the process is simple, the production cost is reduced, and the method is suitable for large-scale commercial production.

The invention provides a method for inhibiting the formation of Kirkendall holes in an In-based brazing filler metal welding interface by adopting a vertical twin structure, which comprises the following steps of: respectively adhering a layer of vertical twin structure to the surfaces of an upper metal substrate to be welded and a lower metal substrate to be welded which are subjected to surface treatment in an electro-deposition manner, wherein the size of the vertical twin structure is 5 * 5 mm, the thickness of the vertical twin structure is 20-40 mu m, and the thickness of the vertical twin structure is 10 * 10 mm; the method comprises the following steps: carrying out a thermocompression bonding experiment on a pure copper coating with a vertical orientation nano twin crystal structure at set bonding temperature, pressure and time; according to the technical scheme, by means of the structural characteristic that the diffusion coefficient of the vertically-arranged twin boundaries in the nano twin structure is low, the diffusion rate of interface elements is reduced, flux balance is maintained, and the low impurity characteristic of the vertically-oriented nano twin film is utilized, so that formation of Kirkendall voids in the welding interface is limited. The method provided by the invention is simple and convenient to operate, and has great significance for improving the connection reliability of the In-based low-temperature bonding system.

A method for manufacturing a laminated molded body includes a cutting-out step for cutting out a cushion layer to form a cut-out part; a base material laminating step for forming a first laminated body; an insulating material placing step of attaching an insulating material to the cut-out part; a first thermocompression bonding step for bonding the first laminated body by thermocompression; a removing step for removing the cut-out part to form an opening; a skin laminating step for forming a second laminated body; and a second thermocompression bonding step for bonding the skin at the opening part to the lower layer material by bonding the second laminated body by thermocompression, the lower layer material being arranged below the cushion layer having the opening part.

The invention discloses a wafer-level heat dissipation structure and a manufacturing method. The wafer-level heat dissipation structure comprises a heat dissipation substrate, a device wafer and a bonding layer, the heat dissipation substrate is a first silicon wafer with a diamond layer growing on the lower surface, and the upper surface of the heat dissipation substrate is plated with a first copper layer; the device wafer is a second silicon wafer of which the upper surface is integrated with an active device, and the lower surface is plated with a second copper layer; the bonding layer is composed of a Cu-Cu bonding interface formed by the first copper layer and the second copper layer through thermocompression bonding. The method comprises the following steps: growing a diamond layer on the lower surface of a first silicon wafer through MPCVD, and sputtering a Cu layer after the upper surface is thinned; sputtering a Cu layer on the back surface of the second silicon wafer of which the surface is integrated with the active device; and finally realizing interconnection of the Cu layers of the two wafers through thermocompression bonding. The problem of multi-interface thermal resistance caused by a traditional thermal interface material is avoided, an ultra-low thermal resistance path from a chip junction to a diamond heat dissipation surface is constructed, and the method is particularly suitable for thermal management of a high-power-density semiconductor device.

A wafer processing method is provided, which does not hinder the joining performed later even after the head of the protrusion-shaped electrode is cut. A wafer processing method, which is a wafer divided by a division predetermined line on a front surface to form a plurality of devices having a protrusion-shaped electrode, wherein the wafer processing method includes: a cutting step of holding a back surface of the wafer by a holding surface of a chuck table, cutting the head of the protrusion-shaped electrode to make the height of the head uniform by a cutter rotating in parallel with the holding surface, and making a metal surface exposed; a thermocompression bonding tab laying step of laying a thermocompression bonding tab on the front surface of the wafer; a thermocompression bonding step of heating and pressing the thermocompression bonding tab to perform thermocompression bonding; and a peeling step of peeling the thermocompression bonding tab from the wafer before the wafer is divided into each device chip and the electrode is joined to a wiring substrate.

A method for manufacturing a wiring board includes: disposing a first resist material on a substrate; forming a first resist layer by curing the first resist material; forming a resin layer on a release film; forming a conductor portion on the resin layer; covering the conductor portion by disposing a second resist material on the resin layer; forming a second resist layer by curing the second resist material; bringing the first resist layer into contact with the second resist layer, and thereafter bonding the first resist layer and the second resist layer by thermocompression bonding; and releasing the release film from the resin layer.

The present invention relates to a coil component in which a terminal electrode and a terminal end of a wire are connected by thermocompression bonding at a bottom surface of a flange portion, and the following effects are obtained as a result of thermocompression bonding being appropriately performed without being excessively insufficient, that is, a stable fixing force is obtained for the connection state between the terminal electrode and the terminal end of the wire, and problems caused by the terminal end of the wire protruding from the terminal electrode are less likely to occur. A terminal end (21a) of a wire (21) is in a state of being at least partially disposed inside a terminal electrode (17) and extending along a main surface (25) of the terminal electrode, and has a top surface (33) located at a side opposite to the bottom surface (23) of a flange portion (13) from the main surface. A solder tail surface (37) that rises from the main surface toward the top surface and forms a concave curved surface is formed on an outer surface of the terminal electrode. The main surface is realized by a parent solder material layer (31) composed of tin or a tin alloy that constitutes an outermost layer of the terminal electrode.

The present invention is directed to provide novel composite copper components. For example, provided is a composite copper component including a copper oxide-containing layer formed on at least a portion of the surface of a copper component, in which when the surface of the composite copper component is bonded to a resin substrate by thermocompression, and the copper component is peeled off from the resin substrate after the thermocompression bonding, metal contained in the copper oxide-containing layer is transferred to the resin substrate.

A method for manufacturing a multilayer ceramic electronic component includes: forming a pair of side margin portions on side surfaces of each of a plurality of unfired laminates, respectively, by thermocompression bonding a ceramic sheet containing 10% by mass or more of a binder resin to one of the side surfaces of the laminate for forming each of the side margin portions, performing a first heat treatment on the plurality of laminates having the pair of side margin portions formed thereon in a first condition so as to remove a portion of the binder resin contained in the side margin portions; and thereafter, performing a second heat treatment on the plurality of laminates having the pair of side margin portions formed thereon in a second condition that is different from the first condition so as to remove a remaining binder resin from the side margin portions.

The invention relates to the technical field of microelectronic manufacturing, and discloses a preparation method and a transfer method of a bearing support plate for transferring a miniature LED chip, and the preparation method comprises the steps: carrying out the cleaning and oxygen plasma activation of a bearing support plate base material; a five-layer structure composite membrane material is prepared by adopting a roller blade coating process, and the composite membrane material comprises a PET base material layer, and a first silica gel layer and a second silica gel layer which are respectively coated on two sides of the PET base material layer; after curing, the second silica gel layer side of the composite membrane material is attached to the bearing carrier plate base material; according to the transferring method, chip transferring is achieved through the steps of contact attaching, laser stripping and thermocompression bonding by means of the bearing carrier plate. According to the invention, the thickness uniformity of an adhesive layer is improved, precise adhesive force regulation and control of chip picking and releasing are realized, the high-temperature process of a traditional spin coating process on a carrier plate is avoided, the problems of chip fragmentation, displacement and the like are effectively solved, and the yield, efficiency and precision of Micro LED mass transfer are greatly improved.

The utility model discloses an aerogel package and an electric heating insulation device for a pipeline, the aerogel package is mainly characterized by comprising aerogel and a sealing package coated outside the aerogel, the sealing package is defined to form a thickness, a coating side, a back side and an internal space, so that the aerogel is arranged in the internal space; wherein the sealing bag is provided with a plurality of thermocompression bonding edges, each thermocompression bonding edge is provided with a protruding length, the protruding length is made to be larger than two times of the thickness, each thermocompression bonding edge can be reversely folded and abut against the back side, and the inner space is in a vacuumized state.

The utility model relates to the technical field of thermocompression bonding, in particular to a protective clothing processing bonding machine which comprises a machine frame, a first fixing plate is fixedly connected in the machine frame, a second fixing plate is fixedly connected in the machine frame, and an electric push rod is fixedly connected to the upper surface of the first fixing plate. The upper surface of the first fixing plate is fixedly connected with a controller, the upper surface of the second fixing plate is connected with an ironing table in an embedded mode, the side surface of the machine frame is fixedly connected with an air pump, and the side surface of the machine frame is fixedly connected with a first water tank. The protective clothing is flattened through the rubber damping roller, after the spring is stressed and contracted, the heat sealing base makes contact with the protective clothing to complete hot pressing, the manpower cost input is reduced, meanwhile, wrinkles generated during hot pressing are avoided, the heat sealing module, the stretching module and the limiting base can be separated, and the interiors of the stretching module and the heat sealing module can be conveniently overhauled.

A resin sheet has a thermocompression bonding film that is to be thermocompression bonded to a workpiece. The resin sheet includes the thermocompression bonding film that is made of resin and has one surface which is to be thermocompression bonded to the workpiece, and a resin-made protective film that has an inner surface facing the one surface, is stuck to the thermocompression bonding film in a peelable manner, and protects the one surface. At least one of the one surface or the inner surface is provided with a sticking section for sticking the thermocompression bonding film and the protective film to each other. The sticking section is disposed in a region not overlapping, in a plan view, with a predetermined region of the one surface, the predetermined region being scheduled to be thermocompression bonded to the workpiece.

The invention discloses a thermocompression bonding device and method based on multi-vision collaboration, and belongs to the technical field of semiconductor packaging, the thermocompression bonding device comprises a carrier, a transfer platform, a pickup head, a bonding head, a first vision assembly, a second vision assembly and a third vision assembly, the pickup head is used for placing chips to be bonded on placement positions of the transfer platform one by one, and the bonding head is used for bonding the chips to be bonded on the placement positions of the transfer platform. The bonding head is used for picking up the plurality of to-be-bonded chips on the transfer platform and bonding the plurality of to-be-bonded chips to a substrate on the carrying platform at one time; wherein the first visual assembly and the second visual assembly cooperate to complete calibration of the transfer platform and alignment of the bonding head, the third visual assembly and the second visual assembly cooperate to achieve accurate alignment of the substrate and the bonding head, and the precision and stability of one-time bonding of multiple chips are guaranteed. According to the thermocompression bonding equipment based on multi-vision collaboration, efficient and accurate bonding of multiple chips and the substrate is achieved through transfer platform caching, multi-vision alignment and carrying table / bonding head collaboration movement.

The invention discloses an EMI electromagnetic shielding film and a manufacturing method thereof.The EMI electromagnetic shielding film comprises a transparent substrate base material and further comprises a conductive metal layer formed on the surface of the transparent substrate base material, and the conductive metal layer is provided with a wiring structure with a preset pattern; the manufacturing method of the EMI electromagnetic shielding film comprises the following steps: S1, providing a transparent substrate base material; s2, a transparent base material is stacked on the transparent substrate base material through a thermocompression bonding technology, and a composite base material is formed; s3, performing deep cutting on the composite base material by adopting laser to form a groove with a preset pattern; s4, a conductive metal layer is deposited on the surface of the cut composite base material through a magnetron sputtering method; the groove filling type conductive path is formed through laser depth-controlled cutting, the conductive metal layer is completely embedded into the surface of the transparent substrate base material, and compared with a traditional yellow light etching process, generation of a relief printing plate circuit is avoided, so that it is guaranteed that the mechanical property of the transparent substrate base material is uniform, and the impact resistance is improved.

Methods and systems for low-force, low-temperature thermocompression bonding. The present application teaches new methods and structures for three-dimensional integrated circuits, in which cold thermocompression bonding is used to provide reliable bonding. To achieve this, reduction and passivation steps are preferably both used to reduce native oxide on the contact metals and to prevent reformation of native oxide, preferably using atmospheric plasma treatments. Preferably the physical compression height of the elements is set to be only enough to reliably achieve at least some compression of each bonding element pair, compensating for any lack of flatness. Preferably the thermocompression bonding is performed well below the melting point. This not only avoids the deformation of lower levels which is induced by reflow techniques, but also provides a steep relation of force versus z-axis travel, so that a drastically-increasing resistance to compression helps to regulate the degree of thermocompression.

A joined body production method includes subjecting a first electronic component and a second electronic component to thermocompression bonding via a hot-melt adhesive sheet. The hot-melt adhesive sheet includes a binder and solder particles. The binder includes a crystalline polyamide resin having a carboxyl group. A melting point of the solder particles is 30° C. to 0° C. lower than a temperature of the thermocompression bonding. When melt viscosities of the hot-melt adhesive sheet are measured under a condition of a heating rate of 5° C. / min., the hot-melt adhesive sheet has a ratio of a melt viscosity at 40° C. lower than the temperature of the thermocompression bonding to a melt viscosity at 20° C. lower than the temperature of the thermocompression bonding of no less than 10.

Wafer processing method for dividing a wafer (1) along a plurality of dividing lines (3) to obtain a plurality of individual component chips (1c), wherein the dividing lines (3) are formed on the front side (1a) of the wafer (1) so as to define a plurality of separate regions in which a plurality of components (5) are individually formed, the wafer processing method comprising: a ring frame preparation step of preparing a ring frame (7) having an inner opening (7a) for receiving the wafer (1); a polyester film providing step of positioning the wafer (1) in the inner opening (7a) of the ring frame (7) and providing a polyester film (9) on a back side (1b) of the wafer (1) and on a back side (7c) of the ring frame (7), wherein no adhesive layer is arranged between the polyester film (9) and the wafer (1); a bonding step of heating the polyester film (9) while applying pressure to the polyester film (9) after performing the polyester film providing step, whereby the wafer (1) and the ring frame (7) are bonded by thermocompression bonding via the polyester film (9) to form a frame unit (11) in a state where the front side (1a) of the wafer (1) and the front side (7b) of the ring frame (7) are exposed upward; a dividing step of applying a laser beam to the wafer (1) along each dividing line (3), the laser beam having an absorption wavelength for the wafer (1), after performing the bonding step, thereby forming a dividing groove in the wafer (1) along each dividing line (3) to divide the wafer (1) into the individual component chips (1c); and a receiving step of blowing air to each component chip (1c) via the polyester film (9) after performing the dividing step to push up each component chip (1c), thereby receiving each component chip (1c) from the polyester film (9).

The invention provides a method for improving the lamination binding property of water-based ceramic plain sheets, and relates to the technical field of ceramic materials. The method comprises the following steps: firstly, coating an interface binder on a non-smooth surface / smooth surface of the ceramic wafer and drying; and then laminating at least two ceramic wafers treated by the interface binder, and carrying out thermocompression bonding to obtain the laminated ceramic wafer. According to the method disclosed by the invention, the interlayer bonding strength is remarkably enhanced, the problems of sintering layering and warping of the laminated ceramic plain sheet caused by insufficient bonding force are effectively relieved, the technical bottleneck of poor wettability of the water-based tape casting slurry and the existing film belt is further overcome, and the plain sheet with smooth surface and uniform thickness can be stably prepared.

The invention provides a plasma activation atomic-scale bonding method and system for a sensor glass cover plate, and particularly relates to the technical field of surface treatment in microelectronic manufacturing. The method comprises the following steps: performing plasma activation treatment on the surface of a sensor glass cover plate to generate an activated glass surface; spraying a solution containing lanthanide rare earth elements on the surface of the activated glass to form a rare earth treatment layer; then, ultraviolet light with the wavelength ranging from 200 nm to 300 nm is used for irradiation, and the rare earth treatment layer is converted into a rare earth oxide catalytic layer; aligning and assembling the sensor glass cover plate with the catalyst layer and a to-be-bonded part; and finally, carrying out thermocompression bonding at the temperature of 150-200 DEG C and under the pressure of 0.1-0.5 MPa, and promoting a dehydration condensation reaction between the surface of the activated glass and the surface hydroxyl of the to-be-bonded part through the rare earth oxide catalyst layer. The problem of aging attenuation of glass surface activity after plasma activation is solved, the effective time window of the bonding process is prolonged, the equipment requirement is reduced, and high-yield and high-consistency low-temperature high-strength bonding is realized.

Methods and systems for low-force, low-temperature thermocompression bonding. The present application teaches new methods and structures for three-dimensional integrated circuits, in which cold thermocompression bonding is used to provide reliable bonding. To achieve this, reduction and passivation steps are preferably both used to reduce native oxide on the contact metals and to prevent reformation of native oxide, preferably using atmospheric plasma treatments. Preferably the physical compression height of the elements is set to be only enough to reliably achieve at least some compression of each bonding element pair, compensating for any lack of flatness. Preferably the thermocompression bonding is performed well below the melting point. This not only avoids the deformation of lower levels which is induced by reflow techniques, but also provides a steep relation of force versus z-axis travel, so that a drastically-increasing resistance to compression helps to regulate the degree of thermocompression.

Heat transfer couplers, which can also be referred to as nozzles, for semiconductor manufacturing are provided. The heat transfer couplers can include a cavity on a side that is opposite the side a semiconductor chip is attached to during an assembly process. In the assembly process, the semiconductor chip can be electrically coupled to a package substrate forming electrical interconnects. The assembly process can be a thermocompression bonding process in which first level interconnects are formed.

A joined body production method includes subjecting a first electronic component and a second electronic component to thermocompression bonding via a hot-melt adhesive sheet. The hot-melt adhesive sheet includes a binder and solder particles. The binder includes a crystalline polyamide resin having a carboxyl group. A melting point of the solder particles is 30° C. to 0° C. lower than a temperature of the thermocompression bonding. When melt viscosities of the hot-melt adhesive sheet are measured under a condition of a heating rate of 5° C. / min., the hot-melt adhesive sheet has a ratio of a melt viscosity at 40° C. lower than the temperature of the thermocompression bonding to a melt viscosity at 20° C. lower than the temperature of the thermocompression bonding of no less than 10.

The present invention relates to the technical field of thermocompression bonding in microelectronic packaging, and specifically to a method for hermetic packaging resistant to ultra-high temperatures, which includes the following steps: platinum metal is used as the bonding connection material for bonding, and the bonding material is not mixed with other metal materials; first, the substrate bottom film is cleaned, and then a dielectric layer is prepared by chemical vapor deposition; a bottom electrode is prepared through photolithography, sputtering, and stripping; a nano-platinum column array is fabricated on the surface of the bonding bump platinum metal by a deposition method; then the substrate is immersed in a hexanethiol solution to self-assemble a barrier film to prevent oxidation of the platinum metal surface, and finally, individual microstructures are separated by laser scribing; two structures with sealing rings and bonding bumps are placed in a flip-chip bonder, and after automatic alignment, heating, and pressurization by the bonder, bonding is started, and finally the two structures are combined together. The present invention can provide an oxygen-free and high-temperature protection for graphene nano-film materials at about 1500 °C by directly bonding Pt-Pt to form an oxygen-free vacuum cavity.

A frame unit forming method includes disposing a wafer on an opening portion of an annular frame, forming a frame unit by disposing a thermocompression bonding sheet on the wafer and an outer periphery of the annular frame and integrating the wafer with the annular frame by the thermocompression bonding sheet, and, activating, before forming the frame unit, a surface of the thermocompression bonding sheet on a side which is to be disposed on the wafer and the annular frame, by applying plasma processing or corona treatment to the surface of the thermocompression bonding sheet.

The utility model discloses a high-density typesetting lead frame, which relates to the technical field of electronic packaging, and comprises a conducting layer, a transition layer, a buffer layer, an insulating layer, a heat dissipation layer and a composite connection structure for connecting the layers which are stacked in sequence, and the composite connection structure comprises thermocompression bonding layers and adhesive layers which are distributed alternately. A first thermocompression bonding layer is arranged between the conductive layer and the transition layer, a second thermocompression bonding layer is arranged between the buffer layer and the insulating layer, a first cementing layer is arranged between the transition layer and the buffer layer, and a second cementing layer is arranged between the insulating layer and the heat dissipation layer. The high-density typesetting lead frame realizes integration of high-density wiring, efficient heat dissipation and high mechanical strength by cooperatively regulating thermal stress through the nano-diamond-containing silver adhesive layer and the copper alloy-aluminum oxide-molybdenum copper composite layer system and combining aluminum nitride ceramic micropore filling, the nickel-plated diamond copper heat dissipation layer and the gradient buffer strip structure design; and the reliability and the service life of the electronic device under high-temperature and high-load working conditions are remarkably improved.