210 results about "Thermocompression bonding" patented technology

The invention discloses an ultra-miniature patch fuse structure and a production process thereof. A fuse comprises a ceramic substrate, an inner electrode part, a terminal electrode part, a fuse wire part and a covering protection layer. An inner electrode groove is formed in the side wall of the ceramic substrate, and the inner electrode part comprises a first inner electrode and a second inner electrode; the first inner electrode and the second inner electrode are respectively provided with a fuse wire fixing groove. According to the production process, inner electrode grooves are formed in the two ends of a ceramic substrate, a first inner electrode and a second inner electrode are constructed through metallization wall-hanging treatment, a fuse part is inserted into a fuse fixing groove and connected through thermal ultrasonic or hot pressing bonding, and a protection layer is printed and cured to enhance the insulation performance. According to the invention, through cooperation of the fuse wire fixing grooves, accurate limitation and anti-drop protection of fuse wire component connection points are realized, and the structural stability and the electrical connection reliability between the fuse wire component and the first inner electrode and between the fuse wire component and the second inner electrode are improved.

The invention discloses a manufacturing method of a high-precision intelligent instrument measuring chip and a related device. The method comprises the following steps: firstly, performing multi-stage vacuum annealing and atomic layer reduction corrosion removal on lower-layer copper interconnection, introducing thermal-electric synergistic stress to convert a vacancy-rich layer into < 111 > preferred grains, and obtaining a bonding preparation surface with consistent crystal orientation; and then low-temperature copper-copper thermocompression bonding is completed in a controlled inert atmosphere, and interconnection initial thermoelectric force is intercepted in real time. The method comprises the following steps: establishing a vertical heat flow according to a space mapping power consumption sequence by driving an upper-layer functional region, collecting an interface voltage response, and extracting an interconnection Seebeck deviation through time sequence registration and differential processing; and according to a deviation result, synchronous fusing and parallel connection are implemented by using a programmable metal section of the rewiring layer, a thermoelectric balance interconnection network is constructed, and a zero drift calibration value is written in. According to the scheme, direction-dependent thermoelectromotive force is eliminated in a closed mode on the three levels of material, measurement and interconnection reconstruction, and therefore long-term zero drift stability of a measurement chain is guaranteed under the nanovolt-level noise condition.

The utility model discloses a low-noise MEMS accelerometer, which comprises an upper glass layer, a silicon layer, a lower glass layer and two groups of horseshoe-shaped magnets, a U-shaped cavity is arranged on the upper glass layer, a rectangular cavity is arranged on the lower glass layer, a metal upper electrode array is arranged on the upper glass layer, and an upper internal bonding pad, an upper metal sealing ring and a solder layer are arranged on the upper glass layer; the silicon layer comprises a large-size sensitive mass area, an E-shaped folding beam structure and an oscillator outer frame; a metal layer structure is arranged on the upper surface of the silicon layer; the horseshoe-shaped magnet comprises a magnet yoke, a magnet body and a magnetic pole piece; the thickness of the sensitive mass area, the thickness of the E-shaped folding beam structure and the thickness of the vibrator outer frame are the same, a low-noise mass-spring vibrator structure is achieved through the deep reactive ion etching technology, a glass-silicon-glass sandwich accelerometer structure is achieved in a thermocompression bonding and glue bonding mode, and the performance of the MEMS accelerometer is improved.

Methods and apparatuses for plasma treatment of electrical interconnects of electronic assemblies for integrated circuits such as flip chips are disclosed. A method of interconnect bonding includes applying a plasma comprising activated hydrogen via an atmospheric pressure plasma applicator to a metallic contact supported on a substrate to remove oxidation and create a newly deoxidized metal surface. The metallic contact can be bonded to another via reflow or thermocompression bonding. An inert gas environment can be formed within an enclosure for application of the plasma and / or bonding of the metallic contact.

Thermocompression bonding head fixture designs and techniques for use thereof are provided. In one aspect, an exemplary bonding head fixture includes: a workpiece contact surface; at least one recess in the workpiece contact surface; and heat passages leading into and out of the at least one recess. In another aspect, an exemplary bonding head includes: a bonding head fixture having a workpiece contact surface, at least one recess in the workpiece contact surface, and heat passages leading into and out of the at least one recess; and a heat source connected to at least one of the heat passages. Methods for use of the present bonding head fixtures are also provided.

The invention discloses a TCB thermocompression bonding multi-degree-of-freedom welding head, and relates to the technical field of thermocompression bonding, the TCB thermocompression bonding multi-degree-of-freedom welding head comprises a fixed annular plate fixed on equipment, the fixed annular plate is uniformly and rotatably connected with six telescopic pieces, the six telescopic pieces are arranged on the fixed annular plate in pairs, the end parts of the telescopic pieces are rotatably connected with a movable annular plate, and the movable annular plate is fixedly connected with the fixed annular plate. The end portions of the telescopic pieces arranged in pairs are close to the end portions of the adjacent telescopic pieces arranged in pairs, the end portions of the telescopic pieces arranged in pairs are far away from each other, the number of the telescopic pieces is six, the end portions of the two telescopic pieces are close to each other, a pressing head is fixed to the bottom end of the movable annular plate, and a wire outlet hole is formed in the pressing head. An anti-feeding piece for preventing the welding rod from retracting is arranged in the wire outlet hole; the angle of the pressure head can be adjusted through a parallel mechanism formed by the fixed annular plate, the telescopic piece and the movable annular plate, so that the force applied to the pressure head is always overlapped with the normal direction of the electrode surface of the chip, the phenomenon of slippage of the chip is avoided, and the qualification rate of the chip is ensured.

The invention provides a preparation method of a full-color Micro-LED display device, and the method comprises the steps: sequentially preparing single-color Micro-LED chip arrays and a first receiving substrate, precisely fixing the three single-color Micro-LED chip arrays at preset positions of the first receiving substrate through thermocompression bonding, and respectively removing substrates; adding a strong-viscosity light-transmitting material on one side, facing the full-color Micro-LED chip array, of the first receiving substrate, and fixing the prepared second receiving substrate on the first receiving substrate through the strong-viscosity light-transmitting material; the first receiving substrate is removed, and the reserved second receiving substrate, the strong-viscosity light-transmitting material, the full-color Micro-LED chip array and the metal bump electrodes on the Micro-LED chips form a pre-bonding module; and the pre-bonding module and the driving substrate are accurately fixed together in a thermocompression bonding mode, and preparation of the full-color Micro-LED display device is completed. According to the invention, the accuracy, stability and transfer efficiency of multi-time transfer integration of the full-color Micro-LED can be improved, the process is simple, the production cost is reduced, and the method is suitable for large-scale commercial production.

The invention provides a method for inhibiting the formation of Kirkendall holes in an In-based brazing filler metal welding interface by adopting a vertical twin structure, which comprises the following steps of: respectively adhering a layer of vertical twin structure to the surfaces of an upper metal substrate to be welded and a lower metal substrate to be welded which are subjected to surface treatment in an electro-deposition manner, wherein the size of the vertical twin structure is 5 * 5 mm, the thickness of the vertical twin structure is 20-40 mu m, and the thickness of the vertical twin structure is 10 * 10 mm; the method comprises the following steps: carrying out a thermocompression bonding experiment on a pure copper coating with a vertical orientation nano twin crystal structure at set bonding temperature, pressure and time; according to the technical scheme, by means of the structural characteristic that the diffusion coefficient of the vertically-arranged twin boundaries in the nano twin structure is low, the diffusion rate of interface elements is reduced, flux balance is maintained, and the low impurity characteristic of the vertically-oriented nano twin film is utilized, so that formation of Kirkendall voids in the welding interface is limited. The method provided by the invention is simple and convenient to operate, and has great significance for improving the connection reliability of the In-based low-temperature bonding system.

A conveyance roller conveys a plurality of sheet groups, each to which a bonding agent has been applied. A sheet holder holds the plurality of sheet groups by stacking a subsequent sheet group on a preceding sheet group. A thermocompression bonding unit produces a booklet by applying heat and pressure to the plurality of sheet groups held in the sheet holder. A controller obtains sheet information indicating a type of sheet or a conveyance duration of a preceding sheet group among a plurality of sheet groups, and controls a thermocompression bonding parameter to be applied to at least one subsequent sheet group of the preceding sheet group among the plurality of sheet groups in the thermocompression bonding unit based on the sheet information.

A method for manufacturing a laminated molded body includes a cutting-out step for cutting out a cushion layer to form a cut-out part; a base material laminating step for forming a first laminated body; an insulating material placing step of attaching an insulating material to the cut-out part; a first thermocompression bonding step for bonding the first laminated body by thermocompression; a removing step for removing the cut-out part to form an opening; a skin laminating step for forming a second laminated body; and a second thermocompression bonding step for bonding the skin at the opening part to the lower layer material by bonding the second laminated body by thermocompression, the lower layer material being arranged below the cushion layer having the opening part.

The invention discloses a wafer-level heat dissipation structure and a manufacturing method. The wafer-level heat dissipation structure comprises a heat dissipation substrate, a device wafer and a bonding layer, the heat dissipation substrate is a first silicon wafer with a diamond layer growing on the lower surface, and the upper surface of the heat dissipation substrate is plated with a first copper layer; the device wafer is a second silicon wafer of which the upper surface is integrated with an active device, and the lower surface is plated with a second copper layer; the bonding layer is composed of a Cu-Cu bonding interface formed by the first copper layer and the second copper layer through thermocompression bonding. The method comprises the following steps: growing a diamond layer on the lower surface of a first silicon wafer through MPCVD, and sputtering a Cu layer after the upper surface is thinned; sputtering a Cu layer on the back surface of the second silicon wafer of which the surface is integrated with the active device; and finally realizing interconnection of the Cu layers of the two wafers through thermocompression bonding. The problem of multi-interface thermal resistance caused by a traditional thermal interface material is avoided, an ultra-low thermal resistance path from a chip junction to a diamond heat dissipation surface is constructed, and the method is particularly suitable for thermal management of a high-power-density semiconductor device.

The invention provides a stacking method of a three-dimensional memristor and a bonding method of a semiconductor device, and the stacking method comprises the steps: providing a first substrate which is provided with a first semiconductor composite layer; forming a memristor layer to cover the first semiconductor composite layer; providing a second substrate, wherein a second semiconductor composite layer is arranged on the second substrate; forming a bonding layer to cover the second semiconductor composite layer, wherein the bonding layer comprises an exposed silicon oxide layer; hydroxylation processing is carried out on the surfaces of the memristor layer and the silicon oxide layer; and carrying out thermocompression bonding on the memristor layer and the silicon oxide layer to enable the first semiconductor composite layer and the second semiconductor composite layer to be stacked and connected. According to the invention, the process difficulty of preparing the three-dimensional memristor can be reduced.

A wafer processing method is provided, which does not hinder the joining performed later even after the head of the protrusion-shaped electrode is cut. A wafer processing method, which is a wafer divided by a division predetermined line on a front surface to form a plurality of devices having a protrusion-shaped electrode, wherein the wafer processing method includes: a cutting step of holding a back surface of the wafer by a holding surface of a chuck table, cutting the head of the protrusion-shaped electrode to make the height of the head uniform by a cutter rotating in parallel with the holding surface, and making a metal surface exposed; a thermocompression bonding tab laying step of laying a thermocompression bonding tab on the front surface of the wafer; a thermocompression bonding step of heating and pressing the thermocompression bonding tab to perform thermocompression bonding; and a peeling step of peeling the thermocompression bonding tab from the wafer before the wafer is divided into each device chip and the electrode is joined to a wiring substrate.

A method for producing a laminate of iron-based amorphous alloy ribbons having a compositional formula of T100-x-y-zSix (B1-mCm) yPz (wherein T is at least one element selected from the group consisting of Fe, Co and Ni and is a transition metal element that must include Fe) by laminating a plurality of iron-based amorphous alloy ribbons having a composition formula of T100-x-y-zSix (B1-mCm) yPz (wherein Y is a transition metal element that must include Fe); an iron-based amorphous alloy ribbon having the composition has a thickness of 30 [mu] m or more and 60 [mu] m or less, and the method for producing a laminate of iron-based amorphous alloy ribbons comprises: a pretreatment step (S1) in which a plurality of the iron-based amorphous alloy ribbons are heat-treated at a temperature of 200 DEG C or more and less than the crystallization temperature; a coating step (S2) in which at least one of the plurality of heat-treated iron-based amorphous alloy ribbons is coated with a thermosetting resin to form an adhesive layer; and a thermocompression bonding step (S3) for forming a laminate by thermocompression bonding a plurality of the iron-based amorphous alloy ribbons via the adhesive layer.

A method for manufacturing a wiring board includes: disposing a first resist material on a substrate; forming a first resist layer by curing the first resist material; forming a resin layer on a release film; forming a conductor portion on the resin layer; covering the conductor portion by disposing a second resist material on the resin layer; forming a second resist layer by curing the second resist material; bringing the first resist layer into contact with the second resist layer, and thereafter bonding the first resist layer and the second resist layer by thermocompression bonding; and releasing the release film from the resin layer.

The present invention relates to a coil component in which a terminal electrode and a terminal end of a wire are connected by thermocompression bonding at a bottom surface of a flange portion, and the following effects are obtained as a result of thermocompression bonding being appropriately performed without being excessively insufficient, that is, a stable fixing force is obtained for the connection state between the terminal electrode and the terminal end of the wire, and problems caused by the terminal end of the wire protruding from the terminal electrode are less likely to occur. A terminal end (21a) of a wire (21) is in a state of being at least partially disposed inside a terminal electrode (17) and extending along a main surface (25) of the terminal electrode, and has a top surface (33) located at a side opposite to the bottom surface (23) of a flange portion (13) from the main surface. A solder tail surface (37) that rises from the main surface toward the top surface and forms a concave curved surface is formed on an outer surface of the terminal electrode. The main surface is realized by a parent solder material layer (31) composed of tin or a tin alloy that constitutes an outermost layer of the terminal electrode.

The present invention is directed to provide novel composite copper components. For example, provided is a composite copper component including a copper oxide-containing layer formed on at least a portion of the surface of a copper component, in which when the surface of the composite copper component is bonded to a resin substrate by thermocompression, and the copper component is peeled off from the resin substrate after the thermocompression bonding, metal contained in the copper oxide-containing layer is transferred to the resin substrate.

A method for manufacturing a multilayer ceramic electronic component includes: forming a pair of side margin portions on side surfaces of each of a plurality of unfired laminates, respectively, by thermocompression bonding a ceramic sheet containing 10% by mass or more of a binder resin to one of the side surfaces of the laminate for forming each of the side margin portions, performing a first heat treatment on the plurality of laminates having the pair of side margin portions formed thereon in a first condition so as to remove a portion of the binder resin contained in the side margin portions; and thereafter, performing a second heat treatment on the plurality of laminates having the pair of side margin portions formed thereon in a second condition that is different from the first condition so as to remove a remaining binder resin from the side margin portions.

The invention relates to the technical field of microelectronic manufacturing, and discloses a preparation method and a transfer method of a bearing support plate for transferring a miniature LED chip, and the preparation method comprises the steps: carrying out the cleaning and oxygen plasma activation of a bearing support plate base material; a five-layer structure composite membrane material is prepared by adopting a roller blade coating process, and the composite membrane material comprises a PET base material layer, and a first silica gel layer and a second silica gel layer which are respectively coated on two sides of the PET base material layer; after curing, the second silica gel layer side of the composite membrane material is attached to the bearing carrier plate base material; according to the transferring method, chip transferring is achieved through the steps of contact attaching, laser stripping and thermocompression bonding by means of the bearing carrier plate. According to the invention, the thickness uniformity of an adhesive layer is improved, precise adhesive force regulation and control of chip picking and releasing are realized, the high-temperature process of a traditional spin coating process on a carrier plate is avoided, the problems of chip fragmentation, displacement and the like are effectively solved, and the yield, efficiency and precision of Micro LED mass transfer are greatly improved.

The invention discloses a thermocompression bonding and reflow soldering packaging method, a flip-chip bonding structure and a chip structure, and relates to the technical field of chips. Comprising the following steps: preparing a plurality of welding spots on one side of a substrate to obtain a first welding plate; preparing a plurality of gold bumps on one side of the chip to obtain a second welding plate; the side, with the solder, of the first welding plate is welded to the side, with the gold bumps, of the second welding plate, and a packaged chip is obtained; wherein the welding pressure is 20-25g per gold bump. By directly welding the side, with the solder, of the first welding plate and the side, with the gold bumps, of the second welding plate, the step of flattening the gold bumps in traditional flip reflow soldering is omitted, preparation of the first welding plate and preparation of the second welding plate can be conducted at the same time, flip bonding between a chip and a substrate is achieved on the same production line, and the production efficiency is improved. And electrical signal interconnection is realized. The gold bump leveling process link is reduced, the complexity of the process flow is reduced, the yield is improved, the manufacturing cost is reduced, and the production and manufacturing efficiency is improved.

The utility model discloses a thermocompression bonding device for preventing oxidation of a metal frame, which is applied to the field of industrial preparation and comprises a pressing plate and a heating cushion block. A protruding cushion table is formed in the heating cushion block corresponding to the bonding processing area, and gas storage grooves are formed in the two sides of the protruding cushion table in the extending direction of the protruding cushion table. Protective gas inlet holes are formed in the gas storage groove and the surface of the convex cushion table; the pressing plate is provided with at least two sets of backflow holes, the backflow holes comprise at least one set of first backflow holes corresponding to the protective gas inlet holes in the gas storage groove and at least one set of second backflow holes far away from the protective gas inlet holes in the gas storage groove, and the first backflow holes are at least communicated with the corresponding second backflow holes. According to the utility model, the gas storage groove is formed in the heating cushion block, and the backflow hole is correspondingly formed in the pressing plate, so that the protective gas forms circulation between the backflow hole and the gas storage groove, the protective gas stays in the gas storage groove for a longer time, and the metal frame is prevented from being oxidized.

The utility model discloses an aerogel package and an electric heating insulation device for a pipeline, the aerogel package is mainly characterized by comprising aerogel and a sealing package coated outside the aerogel, the sealing package is defined to form a thickness, a coating side, a back side and an internal space, so that the aerogel is arranged in the internal space; wherein the sealing bag is provided with a plurality of thermocompression bonding edges, each thermocompression bonding edge is provided with a protruding length, the protruding length is made to be larger than two times of the thickness, each thermocompression bonding edge can be reversely folded and abut against the back side, and the inner space is in a vacuumized state.

The utility model relates to the technical field of thermocompression bonding, in particular to a protective clothing processing bonding machine which comprises a machine frame, a first fixing plate is fixedly connected in the machine frame, a second fixing plate is fixedly connected in the machine frame, and an electric push rod is fixedly connected to the upper surface of the first fixing plate. The upper surface of the first fixing plate is fixedly connected with a controller, the upper surface of the second fixing plate is connected with an ironing table in an embedded mode, the side surface of the machine frame is fixedly connected with an air pump, and the side surface of the machine frame is fixedly connected with a first water tank. The protective clothing is flattened through the rubber damping roller, after the spring is stressed and contracted, the heat sealing base makes contact with the protective clothing to complete hot pressing, the manpower cost input is reduced, meanwhile, wrinkles generated during hot pressing are avoided, the heat sealing module, the stretching module and the limiting base can be separated, and the interiors of the stretching module and the heat sealing module can be conveniently overhauled.

The utility model relates to the technical field of thermocompression integrally-formed inductors, and discloses a thermocompression integrally-formed inductor which comprises an integrally-formed inductor body, connecting plates are arranged on the two sides of the top of the integrally-formed inductor body, connecting bases are fixedly arranged at the two ends of one side of each connecting plate, and fixing bases are fixedly arranged on the tops of the connecting bases. Connecting rods are fixedly connected to one side of the fixing base, a protective plate is connected between the two connecting rods, limiting structures are arranged in the connecting rods, and second extrusion blocks are arranged on the inner walls of the two sides of the protective plate. And during installation, the protective plate can be extruded to move up and down, and when the protective plate moves to the top, the protective plate can rotate reversely to the top of the connecting plate, so that the integrally-formed inductor body is installed.

A resin sheet has a thermocompression bonding film that is to be thermocompression bonded to a workpiece. The resin sheet includes the thermocompression bonding film that is made of resin and has one surface which is to be thermocompression bonded to the workpiece, and a resin-made protective film that has an inner surface facing the one surface, is stuck to the thermocompression bonding film in a peelable manner, and protects the one surface. At least one of the one surface or the inner surface is provided with a sticking section for sticking the thermocompression bonding film and the protective film to each other. The sticking section is disposed in a region not overlapping, in a plan view, with a predetermined region of the one surface, the predetermined region being scheduled to be thermocompression bonded to the workpiece.

The invention discloses a thermocompression bonding device and method based on multi-vision collaboration, and belongs to the technical field of semiconductor packaging, the thermocompression bonding device comprises a carrier, a transfer platform, a pickup head, a bonding head, a first vision assembly, a second vision assembly and a third vision assembly, the pickup head is used for placing chips to be bonded on placement positions of the transfer platform one by one, and the bonding head is used for bonding the chips to be bonded on the placement positions of the transfer platform. The bonding head is used for picking up the plurality of to-be-bonded chips on the transfer platform and bonding the plurality of to-be-bonded chips to a substrate on the carrying platform at one time; wherein the first visual assembly and the second visual assembly cooperate to complete calibration of the transfer platform and alignment of the bonding head, the third visual assembly and the second visual assembly cooperate to achieve accurate alignment of the substrate and the bonding head, and the precision and stability of one-time bonding of multiple chips are guaranteed. According to the thermocompression bonding equipment based on multi-vision collaboration, efficient and accurate bonding of multiple chips and the substrate is achieved through transfer platform caching, multi-vision alignment and carrying table / bonding head collaboration movement.

Disclosed is a method for bonding a bridge die 20 provided with TSVs 23 to a rewiring layer through thermocompression bonding (TCB). The method involves covering terminal electrodes 22 on the bridge die 20 and upper ends 23a of the TSVs 23 with a thermosetting resin film (for example, a DAF) to form a resin layer 24 and curing the same. Thereafter, a metal collet C for suctioning the bridge die 20 is heated, pressure is applied while heat is transferred to the entire surface 24a of the resin layer 24, and lower ends 23b of the TSVs 23 and a wiring electrode of the rewiring layer are heat-bonded. According to this method, heat is transferred from the metal collet C to almost the entire surface of the bridge die 20, and thus the quantity of heat transferred to a bonding part between the lower ends 23b of the TSVs 23 and the wiring electrode is increased compared to a method for transferring heat only to an outer edge while avoiding terminal electrodes. Moreover, pressure during heat-bonding can also be applied to almost the entire surface of the resin layer 24. Therefore, the thermocompression bonding can be surely performed.

The invention discloses an EMI electromagnetic shielding film and a manufacturing method thereof.The EMI electromagnetic shielding film comprises a transparent substrate base material and further comprises a conductive metal layer formed on the surface of the transparent substrate base material, and the conductive metal layer is provided with a wiring structure with a preset pattern; the manufacturing method of the EMI electromagnetic shielding film comprises the following steps: S1, providing a transparent substrate base material; s2, a transparent base material is stacked on the transparent substrate base material through a thermocompression bonding technology, and a composite base material is formed; s3, performing deep cutting on the composite base material by adopting laser to form a groove with a preset pattern; s4, a conductive metal layer is deposited on the surface of the cut composite base material through a magnetron sputtering method; the groove filling type conductive path is formed through laser depth-controlled cutting, the conductive metal layer is completely embedded into the surface of the transparent substrate base material, and compared with a traditional yellow light etching process, generation of a relief printing plate circuit is avoided, so that it is guaranteed that the mechanical property of the transparent substrate base material is uniform, and the impact resistance is improved.

Methods and systems for low-force, low-temperature thermocompression bonding. The present application teaches new methods and structures for three-dimensional integrated circuits, in which cold thermocompression bonding is used to provide reliable bonding. To achieve this, reduction and passivation steps are preferably both used to reduce native oxide on the contact metals and to prevent reformation of native oxide, preferably using atmospheric plasma treatments. Preferably the physical compression height of the elements is set to be only enough to reliably achieve at least some compression of each bonding element pair, compensating for any lack of flatness. Preferably the thermocompression bonding is performed well below the melting point. This not only avoids the deformation of lower levels which is induced by reflow techniques, but also provides a steep relation of force versus z-axis travel, so that a drastically-increasing resistance to compression helps to regulate the degree of thermocompression.

A joined body production method includes subjecting a first electronic component and a second electronic component to thermocompression bonding via a hot-melt adhesive sheet. The hot-melt adhesive sheet includes a binder and solder particles. The binder includes a crystalline polyamide resin having a carboxyl group. A melting point of the solder particles is 30° C. to 0° C. lower than a temperature of the thermocompression bonding. When melt viscosities of the hot-melt adhesive sheet are measured under a condition of a heating rate of 5° C. / min., the hot-melt adhesive sheet has a ratio of a melt viscosity at 40° C. lower than the temperature of the thermocompression bonding to a melt viscosity at 20° C. lower than the temperature of the thermocompression bonding of no less than 10.