8results about How to "Reduce parasitism" patented technology

The utility model relates to a laminated busbar packaging module with pins at the top, which is characterized in that on the basis of division of a power area and a non-power area of a wiring layer on a substrate (1), copper bars with pins at the top are applied to the power area to form power pins, and an independent copper bar structure and a laminated copper bar structure are specifically designed; according to the laminated busbar packaging module, the Pins (5) with the top pins are applied in the non-power area to form all the signal pins, the designed laminated busbar packaging module has the advantages of being low in parasitism, higher in efficiency and higher in current capacity, and in practical application, heat dissipation is better, reliability is better, and assembling is easier.

The invention provides an integrated structure of a hybrid heterogeneous integrated circuit and a preparation method thereof, and the method comprises the steps: S1, preparing a GaN HEMT device which comprises a first substrate, a buffer layer, a GaN channel, a first grid electrode, a first source electrode, a first drain electrode and a barrier layer; s2, preparing a SiC JFET device, wherein the SiC JFET device comprises a second substrate, a SiC channel, an n-EPI layer, a second source electrode and a second drain electrode; s3, the first drain electrode and the first source electrode of the GaN HEMT device are correspondingly connected with the second drain electrode and the second source electrode of the SiC JFET device in a bonding mode, and the integrated structure of the hybrid heterogeneous integrated circuit is obtained. According to the invention, the pitch is reduced, and the connection density of the integrated circuit is improved.

The utility model relates to the technical field of plant cultivation, and discloses a parasitic plant aerial fog cultivation, parasitism and collection integrated device which comprises a carrying box, the carrying box is black, three opening and closing doors capable of being independently opened are arranged on the front face of the carrying box from top to bottom, and an aerial fog cultivation layer, a parasitism layer and an atomization layer are sequentially arranged in the carrying box from top to bottom; an illumination assembly is embedded in the top of the aerosol culture layer, and a plant fixing assembly is arranged at the bottom; a parasitic component is embedded in the bottom of the parasitic layer; a nutrient solution storage pool is arranged in the atomization layer, a fogging device is arranged in the nutrient solution storage pool and connected with a timing aerial fog regulator, the nutrient solution storage pool is communicated with a pipeline, and a switch valve is arranged at the tail end of the pipeline.

The invention discloses a monolithic integration voltage doubling rectifying device based on quasi-vertical JTE SBD, and the device comprises two quasi-vertical JTE SBD which respectively form a first charging diode and a second charging diode; the first metal layer comprises a first capacitor cathode plate, a second capacitor anode plate, a first charging diode cathode and a second charging diode cathode; the second metal layer comprises a first port, a second port, a third port, a fourth port, a first charging diode anode, a second charging diode anode, a first capacitor anode plate and a second capacitor cathode plate; the first interlayer interconnection metal is connected with the second port and the first capacitor cathode plate; the second interlayer interconnection metal is connected with the anode of the second charging diode and the cathode of the first charging diode; and the third interlayer interconnection metal is connected with the third port, the anode plate of the second capacitor and the cathode of the second charging diode. The device provided by the invention has relatively high electrical performance and can be applied to occasions of high frequency, high power, intense radiation and the like.

This invention provides a coupler and an RF front-end module. The coupler includes a substrate and input waveguides, switching waveguides, coupling waveguides, isolation waveguides, transition waveguides, and output port lines formed on the substrate. The substrate includes a high-resistivity silicon substrate, an oxide buried insulating layer, a first metal layer, a second metal layer, and a third metal layer stacked sequentially. The input waveguides, coupling waveguides, isolation waveguides, and output port lines are spaced apart and formed on the third metal layer, while the switching waveguides and transition waveguides are spaced apart and formed on the second metal layer. This invention enables the coupler to have low parasitics, high narrowband, stable sampling, and low power consumption.

The invention discloses a non-binary CDAC layout structure and a design method for reducing parasitic parameters thereof, the non-binary CDAC layout structure comprises a low-weight distribution area and a high-weight distribution area, the low-weight distribution area is used for setting a capacitor with a lower weight, the high-weight distribution area is used for setting a capacitor with a higher weight, and the low-weight distribution area is used for setting a capacitor with a lower weight. Capacitors arranged in the low weight distribution area and the high weight distribution area form a capacitor array, and a circle of virtual capacitors are arranged on the periphery of the capacitor array. The unit capacitors in the low weight distribution area are in even number rows and are horizontally and outwards arranged in sequence from small to large according to the capacitor weights along the center point of the capacitor array, and the unit capacitors on each weight are symmetrically arranged along the horizontal center line of the capacitor array; the unit capacitors of the high-weight distribution area are distributed in a central symmetry mode from small to large according to the capacitor weights with the center point of the capacitor array as the original point. According to the invention, the parasitic between the wires can be effectively reduced, the matching precision of the capacitor array is improved, and the precision requirement of the capacitor array in the SAR ADC is met.

The present application relates to a successive approximation ADC, chip and analog-to-digital conversion method based on common-mode voltage. The method includes: a DAC capacitor array; the DAC capacitor array includes a positive capacitor array, a negative capacitor array, a random number generator and a common-mode voltage generating circuit, the upper plates of each capacitor in the positive capacitor array and the negative capacitor array are connected in parallel and connected to the common-mode voltage generating circuit; the positive capacitor array and the negative capacitor array include a high-order capacitor array and a low-order capacitor array, the high-order capacitor array includes a number of thermometer-weighted high-order capacitors, the low-order capacitor array includes a number of binary-weighted low-order capacitors, and the high-order capacitor array is connected to the random number generator; the lower plates of the high-order capacitor and the low-order capacitor are respectively connected to the reference voltage, the differential input voltage or the ground through a three-way gate switch. The use of this method can reduce the power consumption of the SAR ADC and reduce the impact of mismatch.

The invention discloses a high-speed high-precision capacitor array applied to an ADC (Analog to Digital Converter), and belongs to the technical field of capacitors of ADCs. The capacitor array is formed by arranging a plurality of unit capacitors according to a rule and adding side shielding capacitors on two sides; wherein the capacitor array is of a multi-row structure, the leftmost side of each row is a side shielding capacitor and serves as the 0th capacitor, and the first capacitor to the jth capacitor are unit capacitors; the left top plate metal of the unit capacitor is connected and overlapped with the right top plate metal of the 0th capacitor; the top plate metal on the right side of the front unit capacitor is overlapped with the top layer metal on the left side of the adjacent rear unit capacitor; and the (j + 1) th capacitor is a side shielding capacitor which is overturned left and right. By optimizing the arrangement of the capacitor unit, the side shielding capacitor and the capacitor array, the parasitic of the capacitor top plate and the capacitor bottom plate is reduced, the matching degree of the ADC is improved, and the ADC is particularly suitable for a high-speed and high-precision ADC under an advanced process.