The invention relates to a ring gate
field effect transistor and a preparation method thereof. The preparation method includes the following steps that: a first
gate dielectric layer, a channel layer, a second interface
control layer, a source-drain layer and a
semiconductor material layer are formed on a substrate; the
semiconductor material layer is removed through
etching, a structure shaped like a Chinese character ''tu' is formed in a channel region along a longitudinal direction through
etching, the
etching of the protruding part of the structure shaped like a Chinese character ''tu' is performed until arriving at the second interface
control layer, and the etching of two sides of the structure shaped like a Chinese character ''tu' is performed until arriving at the first
gate dielectric layer; third interface control
layers grow on two side walls of the protruding part of the channel region, and a second
gate dielectric layer and a second gate
metal layer are formed on the upper surface of the protruding part from bottom to top, wherein the upper surface of the protruding part is separated from a source region and a drain region by a certain distance, and the second gate
dielectric layer and the second gate
metal layer extend to the side walls of the third interface control
layers and the upper surfaces of flat stages at two sides of the protruding part; and a source-drain
metal layer is formed at a portion at the upper surface of the source-drain layer in the source region and the drain region, wherein the portion is adjacent to the outer side of the upper surface of the source-drain layer. According to the
transistor provided by the invention, channel scattering can be decreased, channel carrier mobility,
gate control ability and current driving ability can be improved, and a
short channel effect and a DIBL effect can be effectively suppressed.