100results about How to "Achieve monolithic integration" patented technology

A cantilever beam structural resonant-type integrated optical waveguide accelerometer, includes an input waveguide (1), a dissymmetrical structural Mach-Zehnder interferometer (2), a micro-mechanical vibration cantilever beam (3), a short curved waveguide (4) and an output waveguide (5); all the waveguide structures and the cantilever beam use the integrated optical micromachining technique, and the device single-scale integration can be realized by using the temperature-insensitive organic polymer optical waveguide structure and the organic polymer substrate, the key technique indexes such as detection sensitivity, dynamic range are extensively adjusted. The phase difference of the optical signal can be measured by detecting the optical intensity of the resonant frequency of the optical circuit so as to achieve high sensitive acceleration detection, and to be free from the effect of the ambient temperature disturbance and waveguide birefringence.

A silicon-based integrated on-chip multimode optical switching system compatible with wavelength division multiplexing signals comprises a multimode optical switching array, N groups of wavelength division-mode division multiplexing optical signal transmitting and receiving systems, and a peripheral driving circuit system, an electrical serial-parallel conversion and parallel-serial conversion system and a high-speed data input and output electrical bus which are used for supporting the system on the chip. According to the system, high-speed serial electric signals generated by data processing nodes are converted into parallel multi-channel electric signals to be input; the optical signal is converted into an optical signal through a modulator array and is loaded on an optical carrier wave of which the wavelength and the mode are multiplexed together; the optical signals enter the multi-mode optical switching array through the multi-mode waveguide input port, are demultiplexed into optical signals of multiple channels after reaching the target port, are converted into parallel electric signals through the photoelectric detector, and are finally reduced into high-speed serial signals to be provided for a data node of the target port for use. The system has the characteristics of low energy consumption, high bandwidth and low delay. The data input interface and the data output interface are both electric domains and are compatible with data interfaces of various existing processors.

The invention belongs to the photoelectronic device preparation technical range in the microwave photonics field, in particular relates to an integrated photoelectronic device which utilizes an optical heterodyne method to generate high-frequency microwaves. A main laser and a slave laser of the integrated photoelectronic device are parallelly arranged on a substrate on which a lower optical guiding layer, an MQW active layer, a grating layer, an upper optical guiding layer, an upper cladding and an ohmic contact layer are orderly extended outwards and integrated together; one end of the main laser and one end of the slave laser realize coupling of modulation sidebands through a multimode interferometer or an annulet structure, and injection locking is performed; then coupling out is performed by the multimode interferometer, heterodyne is performed, the high-frequency microwaves can be obtained. Therefore, differences of laser radiated wavelengths are realized by means of controlling working temperature and injection current of a DFB laser, thereby achieving the effect of injection locking of sidebands. The invention has a novel structure and simple production process, and has broad application prospect in the future high-speed communication field.

The invention relates to a non-refrigerated infrared detector array based on temperature characteristics of a polycrystalline silicon PN junction and a preparation method thereof. The preparation method for the array comprises the following steps: step A, etching, filling and flatting a deep groove in order to divide an infrared detection unit transversely; step B, depositing an embedded oxygen layer and a top silicon layer on the front side of a bottom silicon layer; step C, forming an insulated isolation groove on the front side of the top silicon layer in each infrared detection unit and manufacturing a polycrystalline silicon conducting wire on an insulated cantilever beam; step D, setting a plurality of tandem polycrystalline silicon PN junctions on the top silicon layer in each infrared detection unit; step E, forming a double-layer metal wiring; and step F, manufacturing a suspended insulated cantilever beam in the each infrared detection unit, and etching the bottom silicon layer to form a cavity. The preparation method uses favorable temperature characteristics of the polycrystalline silicon PN junction to obtain detection result of infrared radiation strength through measuring changes of voltage at two ends of the polycrystalline silicon PN junction.

The invention discloses an elasto-optical type photonic crystal waveguide accelerometer comprising an input waveguide, an output waveguide, a Mach-Zehnder Interferometer and a micro over beam structure; the micro over beam structure is employed so as to sense the external acceleration changes; the slow light enhancement photonic crystal waveguide technology can enhance the material refractive index changes under stress and electric field effects, thus improving the detection accuracy; the electric light crystal material and the piezoelectric material are employed so as to realize modulation-demodulation optical path and sensing optical path single chip integration; the accelerometer is high in integration level, high in detection precision, low in modulation half-wave voltage, and high in limit sensitivity.

The invention relates to a polarization sensitive type non-freezing infrared detector which comprises a first-layer suspension structure, wherein the first-layer suspension structure is a non-freezing infrared detector; a second-layer suspension structure is arranged on the first-layer suspension structure; the second-layer suspension structure comprises a grating support layer and a metal grating structure arranged on the grating support layer. An optical system is simplified, and the reality and the effectiveness of images are improved. The invention further relates to a manufacturing method of the polarization sensitive type non-freezing infrared detector. The manufacturing method comprises the following steps: 1, manufacturing a second scarification layer and a grating support layer on a conventional non-freezing infrared detector without structure release; 2, manufacturing the metal grating structure; 3, performing structure release, thereby forming the polarization sensitive type non-freezing infrared detector.

The invention relates to a dual-layer polarization uncooled infrared detector structure. The uncooled infrared detector structure comprises a semiconductor base and a detector body, wherein the detector body comprises an insulating medium layer, a metal reflecting layer, a first support layer, a metal electrode layer, a first protective layer, a second support layer, an electrode metal layer, a thermosensitive layer and a second protective layer; a first resonant cavity is formed between the first support layer and the insulating medium layer; a second resonant cavity is formed between the first protective layer and the second support layer; the thermosensitive layer is arranged on the electrode metal layer, and the dual-layer structure improves the infrared absorption efficiency of the pixel; a polarization structure is arranged on the second protective layer so as to realize the monolithic integration of a polarization sensitive type infrared detector, thereby greatly lowering the difficulty of the optical design; the invention further relates to a preparation method of the detector structure. The preparation method comprises a step of preparing the dual-layer uncooled infrared detector, and further comprises the step of preparing the polarization structure on the dual-layer uncooled infrared detector.

The invention discloses a silicon-based photoelectric detector for photoelectric monolithic integration and a preparation method thereof, which relates to a silicon-based photoelectric monolithic integrated circuit. The invention provides the silicon-based photoelectric detector which is completely compatible with the commercial BCD standard technology and is used for photoelectric monolithic integration, and provides the preparation method thereof. The silicon-based photoelectric detector is provided with a P type silicon substrate, a BN+ epitaxial layer, a BP+ epitaxial layer, an N-EPI epitaxial layer, an N-well layer, a P-well layer, a P+ layer, an N+ layer, an Al layer, a field oxide layer, SiO2 insulating medium layers and a Si3N4 surface passivation layer, wherein the P type silicon substrate, the BN+ epitaxial layer, the BP+ epitaxial layer, the N-EPI epitaxial layer, the N-well layer, the P-well layer, the P+ layer and the N+ layer are arranged on the same silicon wafer; the field oxide layer is a silicon oxide layer generated on the surface of the silicon wafer; a metallic aluminum layer is deposited on the surface of the silicon wafer; three SiO2 insulating medium layers are attached to the silicon substrate from bottom to top according to the preparation sequence through the deposition technology; and the Si3N4 surface passivation layer is attached to the SiO2 insulating medium layers through the deposition technology.

The invention discloses an MEMS integration method. The method comprises steps of: first etching an MEMS area groove, manufacturing a CMOS circuit in an area outside the groove and completing all IC technologies except metal interconnection; then precipitating an IC protective layer and manufacturing an MEMS structure in the groove by employing an MEMS surface sacrificial layer technology; then etching to form lead wire apertures of the IC area, precipitating and imaging the metal to form metal interconnection; finally using photoresist to protect the area outside the groove, removing a sacrificial layer and releasing an MEMS movable structure to obtain a monolithic integration chip. The invention employs MEMS-IC-MEMS intersect manufacturing technology to complete MEMS and IC monolithic integration, reduces height difference between the MEMS structure and the IC through the groove, and reduces pressure of the integration technology on photolithography; meanwhile, technology adjustment avoids metal shedding and improves technology quality and yield.

The invention relates to a method for manufacturing a monolithic polysilicon cantilever structure. In the invention, a processing step of the polysilicon cantilever structure is inserted in a conventional BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) technical process, the deposition and the annealing of polysilicon are finished and an MEMS (Micro-Electro-Mechanical Systems) high-temperature process is prevented from influencing on the metalation process before the metalation process. In the release process of the polysilicon cantilever structure, a special etching solution is adopted, and a negative photoresist is used as a post of the polysilicon cantilever structure so as to effectively avoid the problem of substrate adhesion in the cantilever structure release process by using a wet method. The method provided by the invention solves the technical problems of compatibility between a manufacture process of the polysilicon cantilever structure and a processing process of a BiCMOS circuit, realizes the monolithic integration of the polysilicon cantilever structure and a BiCMOS signal processing circuit, and can be widely applied to the monolithic integration manufacture field of MEMS sensors, such as capacitive accelerometers, gyroscopes, and the like.

The invention provides a coupler structure based on BCB bonding technology and a production method thereof. The coupler structure is characterized in that a silicon substrate and a buried oxide layer disposed on the silicon substrate are provided; a silicon waveguide is disposed on the buried oxide layer, and a first cone-shaped coupling structure is connected with one end of the silicon waveguide; a BCB cladding is disposed on the surface of the buried oxide layer, and is used to cover the silicon waveguide and the first cone-shaped coupling structure; an III-V group optical gain structure is disposed on the surface of the BCB cladding, and a second cone-shaped coupling structure is connected with one end of the III-V group optical gain structure; the first cone-shaped coupling structure and the second cone-shaped coupling structure are in a reverse arrangement, and the projected parts on the horizontal plane are superposed with each other. The mixed integration of the III-V group optical gain structure and the silicon waveguide can be realized, and the mode conversion zone can be formed by adopting the reserve arrangement of the first cone-shaped coupling structure and the second cone-shaped coupling structure, and therefore the length of the coupling structure can be greatly shortened, and the coupling efficiency is high; when the thickness of the BCB cladding is changed, the change amplitude is small, and the coupling efficiency is more stable.

The invention discloses a manufacturing method of a monolithic integrated pressure sensor. Te In the invention, overcomes the problem of processing technology compatibility of a resistance type pressure sensor and an amplification processing circuit is solved, combines the processing technology of the resistance type pressure sensor and the processing technology of the amplification processing circuit are combined, and utilizes a special clamp for protecting an integrated circuit and a piezoresistor on the front surface are utilized, meanwhile, a deep slot is formed below the piezoresistor through corrosion, so that the piezoresistor is successfully manufactured on a movable silicon film, . The invention solvessolving the technical difficult problem of processing technology compatibility of the pressure sensor and the circuit, and realizing realizes the monolithic integration of the pressure sensor and the circuit. The method is suitable for the processing field of miniaturized high-reliability pressure sensors.

The invention provides a SOG(Silicon on Glass)micro heat pipe and the production method. Wherein, the structure uses a silicon chip as substrate, uses synthetic glass as cover film, and the two are sealed together to form enclosed construction through electrostatic bonding, then the liquid-filled is carried out through a pinhole set aside on the silicon chip, and the liquid-filled hole is vacuum-sealed to form a micro flat structure heat pipe whose cavity is filled with certain working fluid. Due to a glass silk, which not only can reduce radius of the meniskus at the gas-solution interface, but also can increase the number of cusp district in a groove, thus improves capillary force for the circumfluence of working fluid. The cover film uses glass sheet, thus enhances visibility so as to carry out real-time observation and monitoring for the functional mode of micro heat pipe. The invention also uses a rectangular cavity etched on the glass as the circulation space of saturated vapor. The connected vapor circulation space can reduce shear friction caused by the high-speed reverse movement of vapor flow and liquid flow at the steam-liquid interface, thus improves the entrainment limit of heat pipe, which ultimately increases the maximum heat output.

The invention discloses a methane sensor based on a single heating element, a preparation method and application. The methane sensor is suitable for industrial and mining enterprises and comprises a heating element, a measuring element, and an environment temperature measuring element, wherein a heater of the heating element of the methane sensor and a measuring component of the measuring element are suspended in air through supporting arms; the heating element independently heats to the high-temperature working state; the measuring element is independently used for detecting gas concentration; the temperature on a detecting sheet of the environment temperature measuring element detects is used for temperature compensation. The processing technology of the methane sensor is compatible with the CMOS (Complementary Metal Oxide Semiconductor) technology. The sensor has the advantages that the sensor is simple in structure, low in power dissipation, high in sensitivity, good in anti-jamming performance, and low in cost.

The invention discloses a monolithically integrated multiplexer transceiver based on an etched diffraction grating, which mainly consists of an etched diffraction grating, an input and output waveguide, a gain waveguide and two multimode waveguide detectors. A downlink optical signal entering through the input and output waveguide is coupled to the two multimode waveguide detectors through the etched diffraction grating. The etched diffraction grating reflects one part of light emitted from the front head face of the gain waveguide back to the gain waveguide through a certain order of diffraction, and forms a resonant laser cavity for generating an uplink optical signal with the rear reflection head face of the gain waveguide. The etched diffraction grating reflects the other part of lightto the input and output waveguide through another order of diffraction at the same time to be further coupled in the optical fiber as the uplink optical signal for transmission. The invention truly realizes the monolithic integration, decreases the coupled times with the optical fiber, reduces the size, improves the integration and is applicable to the mass production.

The invention discloses a Raman spectrum based optical waveguide sensor. The Raman spectrum based optical waveguide sensor comprises an input waveguide, a spiral sensing waveguide, a filter, a connecting waveguide and an output waveguide, wherein a detection window is formed in an upper cladding layer of the spiral sensing waveguide, the input end of the spiral sensing waveguide is connected with a wavelength tunable laser by the input waveguide, the output end of the spiral sensing waveguide is connected with one side of the filter by the connecting waveguide, and the other side of the filter is connected with an optical power meter by the output waveguide. The Raman spectrum based optical waveguide sensor can qualitatively analyze a single sample or a gas-liquid mixed sample, utilizes the planar optical waveguide as a Raman spectrum excitation and collection medium, and is integrated with the filter to obtain a small, low-cost and untagged sensor.

The invention belongs to the technical field of solar energy and provides an integrated on-chip solar cell power supply system. The purposes are to improve the overall efficiency of an on-chip power supply system, and provide lasting and stable energy supplies for micro power consumption systems such as radio frequency identification and wireless sensor network nodes. According to the technical scheme, the integrated on-chip solar cell power supply system comprises a set of solar cell units, an energy collecting module, a control circuit and a linear stabilizer, wherein the solar cell units are connected in parallel by the adoption of a metal interconnection technology, the energy collecting module comprises a ring oscillator, charge pumps connected in series in a multi-stage mode and an energy storage capacitor, and the linear stabilizer comprises a starting circuit, a band-gap reference and an operational amplifier and is used for providing stable working voltage VDD for a load circuit. The integrated on-chip solar cell power supply system is mainly applied to designing and manufacturing solar cells.

The invention relates to a ring gate field effect transistor and a preparation method thereof. The preparation method includes the following steps that: a first gate dielectric layer, a channel layer, a second interface control layer, a source-drain layer and a semiconductor material layer are formed on a substrate; the semiconductor material layer is removed through etching, a structure shaped like a Chinese character ''tu' is formed in a channel region along a longitudinal direction through etching, the etching of the protruding part of the structure shaped like a Chinese character ''tu' is performed until arriving at the second interface control layer, and the etching of two sides of the structure shaped like a Chinese character ''tu' is performed until arriving at the first gate dielectric layer; third interface control layers grow on two side walls of the protruding part of the channel region, and a second gate dielectric layer and a second gate metal layer are formed on the upper surface of the protruding part from bottom to top, wherein the upper surface of the protruding part is separated from a source region and a drain region by a certain distance, and the second gate dielectric layer and the second gate metal layer extend to the side walls of the third interface control layers and the upper surfaces of flat stages at two sides of the protruding part; and a source-drain metal layer is formed at a portion at the upper surface of the source-drain layer in the source region and the drain region, wherein the portion is adjacent to the outer side of the upper surface of the source-drain layer. According to the transistor provided by the invention, channel scattering can be decreased, channel carrier mobility, gate control ability and current driving ability can be improved, and a short channel effect and a DIBL effect can be effectively suppressed.

The invention discloses a substrate structure with high mobility and the preparation method thereof, and belongs to the technical filed of semi-conductor integration. The substrate structure includes a single crystal silicon substrate, a buffer layer, a potential barrier layer, an indium-gallium-arsenic monocrystal layer, a blocking layer and a germanium monocrystal layer, wherein the buffer layer is placed on the single crystal silicon substrate; the potential barrier layer is placed on the buffer layer; the indium-gallium-arsenic monocrystal layer is placed on the potential barrier layer; the blocking layer is placed on the indium-gallium-arsenic monocrystal layer; and the germanium monocrystal layer is placed on the blocking layer. Through adopting the substrate structure and the preparation method thereof, a CMOS (complementary metal oxide semiconductor) device with high mobility and the combination of indium, gallium, arsenic and germanium can be realized on the silica-based substrate, or other semi-conductor devices with high mobility can be prepared on the indium-gallium-arsenic monocrystal layer and the germanium monocrystal layer, the substrate structure can be used for preparing the silica-based device, and the photoelectric device can be prepared through adopting the potential barrier layer, the monolithic integration of multiple unit semi-conductor devices can be facilitated, the performance can be improved, and the power consumption can be reduced.

The invention relates to a visible-short wave infrared detector and a preparation method thereof. The preparation method comprises the steps of forming a P-type doping region and an N-type doping region of a silicon visible light detector on the back of a silicon substrate; forming a protective layer on the P-type doping region and the N-type doping region; epitaxially growing a germanium-tin light absorption layer of a germanium-tin infrared light detector on the front of the silicon substrate; removing the protective layer on the P-type doping region and the N-type doping region so as to complete the fabrication of the silicon visible light detector and the germanium-tin infrared light detector. The preparation method not only can utilize the advantages of low cost, high reliability andthe like of the traditional Si CMOS process, but also can realize monolithic integration of a photoelectric detector in a real sense.