4results about How to "Achieve monolithic integration" patented technology

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The application discloses a tunable optoelectronic oscillator based on a DML-SOA laser chip and belongs to the technical field of semiconductor processes. The tunable optoelectronic oscillator comprises a self-feedback laser, the self-feedback laser encapsulates a DML-SOA laser and an optical isolator in a butterfly tube shell, and is sequentially connected with an optical time delay line and an optoelectronic detector through an optical path, the optoelectronic detector is connected with an electrical amplifier through an electric circuit, the electrical amplifier is connected with an electrical coupler through an electric circuit, one of the electrical coupler is connected with a Bias-T through an electric circuit, the other of the electrical coupler is used as a microwave signal output, and a direct-current power supply is connected with the Bias-T and the self-feedback laser simultaneously. The tunable optoelectronic oscillator has the characteristics of compact structure, high signal-to-noise ratio and low phase noise, can realize a P-1 oscillation phenomenon with adjustable frequency interval through simple electrical injection tuning, and has a wide application prospect in the field of optoelectronic integration and microwave signal generation.

The application relates to the field of silicon-based optoelectronic integration, and particularly discloses an on-chip adaptive combining method and a feedback system for polarization diversity MZM, which comprises the following steps: optical coupling and mode conversion, polarization diversity electro-optical modulation, optical power collection and photoelectric conversion, signal processing and feedback control, and a tunable combining module; after the coupling conversion and modulation, two-way optical power is collected and photoelectrically converted, a power difference voltage is obtained through an analog circuit, a control voltage is generated by superimposing a bias voltage, and a tunable combiner is driven to dynamically adjust a beam splitting ratio to complete combining. The application solves the problems that the output power of the polarization diversity MZM randomly fluctuates with the polarization state, the existing polarization control scheme has slow response, a complex structure and is difficult to integrate with a silicon-based process, realizes real-time and accurate compensation of power fluctuation, guarantees stable combining output power, and has a simple system structure, low power consumption, is easy to monolithically integrate with a silicon-based chip, and improves the performance and compatibility of an integrated photonic link.

This invention relates to a method for fabricating a light-emitting element based on an ultra-smooth interface composite functional transparent conductive layer, comprising the following steps: (1) providing a substrate and performing epitaxial growth; (2) growing a composite functional layer with a thickness of 5-10 nm on the surface of the epitaxial structure; (3) polishing the composite functional layer to ensure that the surface roughness Ra < 0.2 nm; (4) defining the photonic crystal pattern and etching photonic crystal pre-holes in the composite functional layer; (5) depositing the composite transparent conductive layer: firstly, using an atomic layer deposition system (ALD), filling the photonic crystal pre-holes with an ITO material of an indium-tin weight ratio of 90:10, and then growing a second ITO layer with a thickness of 30 nm and an indium-tin weight ratio of 95:5 as a current diffusion layer by sputtering or ion beam deposition, and finally performing high-temperature thermal annealing; this invention optimizes the light extraction efficiency and current diffusion performance of the device by combining fundamental planarization of the substrate interface with the precise fabrication of nanophotonic structures.