Semiconductor device (100B) comprising: a
cell region (102B) containing active regions extending in a first direction and comprising
transistor components formed therein; wherein the transistors of the
cell region (102B) are arranged to function as a D flip-flop (234, 434), DFF, comprising a primary latch (236, 336), a secondary latch (238, 338), and a
clock buffer (246, 346); the primary latch (236, 336) comprising a first sleepy
inverter (250, 350) and a first non-sleepy
inverter (248, 348), NS
inverter; the secondary latch (238, 338) comprising a second sleepy inverter (250, 350) and a second NS inverter (248, 348) includes; and the
clock buffer (246, 346) includes the third and fourth NS inverters (248, 348); a first group of some, but not all, of the
transistor elements has elements configured with a standard
threshold voltage, these being referred to as Vt_std elements;a second group of some, but not all, of the
transistor elements that have a low
threshold voltage configured lower than the standard
threshold voltage, these being referred to as Vt_low elements; and those of the transistors that comprise the third NS inverter (248, 348) and / or the fourth NS inverter (248, 348) are Vt_low elements of the second group, wherein: a third group of some, but not all, of the transistor elements that have a high threshold
voltage configured higher than the standard threshold
voltage, these being referred to as Vt_high elements; and those of the transistors that comprise the first sleepy inverter (250, 350) of the primary latch (236, 336) and the second sleepy inverter (250, 350) of the secondary latch (238, 338) are Vt_high elements of the third group.