The invention provides a method for determining the volatilization behavior of
antimony, a
silicon single crystal rod, a
silicon wafer and a
solar cell, and the method comprises the steps: determining the volatilization behavior of
antimony in a leading and releasing stage and / or an equal-
diameter stage: in the leading and releasing stage, pulling out a small end from
molten silicon; the total feeding amount and the initial
antimony concentration are obtained; the
mass, the
phosphorus-antimony concentration and the
phosphorus concentration of the
small head are obtained; according to the total feeding amount, the
phosphorus-antimony concentration, the initial antimony concentration and the
phosphorus concentration, the volatilization amount of antimony in the small end pulling stage is calculated; in the equal-
diameter stage, the actual resistivity of the
silicon rod at multiple positions is obtained; converting the actual resistivity at the plurality of positions into actual phosphorus and antimony concentrations; acquiring the actual
phosphorus concentration at each position; calculating the actual antimony concentration at each position according to the actual phosphorus-antimony concentration and the actual
phosphorus concentration; and according to the actual antimony concentration, the effective segregation coefficient of antimony, the initial phosphorus concentration and the solidification fraction, the volatilization coefficient of antimony in the equal-
diameter stage is fitted. By means of the method, the volatilization behavior of antimony in the
single crystal pulling process can be determined.