275 results about "Molten silicon" patented technology

The invention provides a method for determining the volatilization behavior of antimony, a silicon single crystal rod, a silicon wafer and a solar cell, and the method comprises the steps: determining the volatilization behavior of antimony in a leading and releasing stage and / or an equal-diameter stage: in the leading and releasing stage, pulling out a small end from molten silicon; the total feeding amount and the initial antimony concentration are obtained; the mass, the phosphorus-antimony concentration and the phosphorus concentration of the small head are obtained; according to the total feeding amount, the phosphorus-antimony concentration, the initial antimony concentration and the phosphorus concentration, the volatilization amount of antimony in the small end pulling stage is calculated; in the equal-diameter stage, the actual resistivity of the silicon rod at multiple positions is obtained; converting the actual resistivity at the plurality of positions into actual phosphorus and antimony concentrations; acquiring the actual phosphorus concentration at each position; calculating the actual antimony concentration at each position according to the actual phosphorus-antimony concentration and the actual phosphorus concentration; and according to the actual antimony concentration, the effective segregation coefficient of antimony, the initial phosphorus concentration and the solidification fraction, the volatilization coefficient of antimony in the equal-diameter stage is fitted. By means of the method, the volatilization behavior of antimony in the single crystal pulling process can be determined.

The invention relates to an integrated carbon / carbon composite material crucible containing an yttrium oxide coating, and belongs to the technical field of thermal field parts for monocrystalline silicon. The crucible comprises a carbon / carbon composite material crucible body, a glassy carbon coating and an yttrium oxide coating, the glassy carbon coating can effectively relieve thermal mismatch between the yttrium oxide coating and the carbon / carbon composite material crucible body, and carbon in the carbon / carbon composite material crucible body can be effectively prevented from escaping; impurities are not introduced into the yttrium oxide coating in the silicon melting process, so that the purity of a silicon material can be effectively ensured, and the yttrium oxide coating has excellent silicon erosion resistance and high-temperature stability; the carbon / carbon composite material crucible body is formed by densifying a carbon fiber prefabricated body which is formed by needling and laying a pure net tire for spraying resin, and the inner surface of the carbon / carbon composite material crucible body is a net tire which is wholly approximately isotropic, so that the overall mechanical strength of the crucible can be ensured, and a good combination effect with a subsequent functional coating can be ensured; and the service life of the crucible can be prolonged.

The invention discloses a graphite crucible silicon infiltration resistant coating based on a gradient boron nitride-silicon carbide composite structure and a preparation method thereof. The coating is composed of hexagonal boron nitride nanosheets, beta-type silicon carbide nanowires, yttrium aluminum garnet precursor sol and the like, and effective blocking of 1500-1600 DEG C silicon melt is achieved through gradient structural design and an in-situ self-repairing mechanism. The preparation process comprises the steps of h-BN activation, S C carbon layer deposition, slurry mixing and spraying and segmented heat treatment. The molten silicon contact angle of the coating reaches 158 + / -2 degrees at the temperature of 1550 DEG C, through cracks do not exist after 50 times of thermal shock circulation, the coating is effective after being continuously used for 48 batches under the industrial working condition, the problems of silicon infiltration interface adhesion and thermal shock failure of a traditional graphite crucible are solved, and the coating has remarkable industrial application value.

The invention provides low-moisture-absorption and high-thermal-conductivity electrical-grade magnesium oxide and a preparation method thereof.The preparation method comprises the steps that silicon powder and silica sol are mixed to serve as coating slurry; carrying out coating treatment on the fused magnesium oxide by using the coating slurry, and then drying and screening to prepare silicon-coated fused magnesium oxide powder; the preparation method comprises the following steps: performing multi-stage preheating treatment and nitriding treatment on silicon-coated fused magnesium oxide powder in a nitrogen atmosphere, so that silicon powder on the surface of magnesium oxide is nitrided to form molten silicon nitride, and finally cooling and sizing to obtain high-temperature electrical-grade magnesium oxide powder with a spherical core-shell structure. The electrical grade magnesium oxide powder can resist high temperature and moisture, more importantly, the heat conduction performance of magnesium oxide is ensured, and the flowability and filling efficiency of the powder are improved.

The invention relates to the technical field of monocrystalline silicon processing, particularly provides a preparation method of monocrystalline silicon, and aims to solve the problem that the crystal quality is influenced by crystal distortion in the existing monocrystalline silicon preparation process. In order to achieve the purpose, the preparation method of the monocrystalline silicon comprises the steps that in the first stage of equal-diameter growth of the monocrystalline silicon, the crystal pulling speed is controlled to be gradually increased to the preset pulling speed, and the liquid opening distance is controlled to be gradually reduced to the preset distance; and in the second stage of equal-diameter growth of the monocrystalline silicon, controlling the crystal pulling speed to maintain the preset pulling speed, and controlling the liquid opening distance to maintain the preset distance. According to the method, the two technological parameters of the liquid opening distance and the crystal pulling speed in the monocrystalline silicon growth process are adjusted in advance, the temperature consistency of the area nearby the molten silicon liquid level can be improved, a stable thermal field is formed at the junction of the crystal and the silicon solution, and therefore the distortion proportion of the crystal can be reduced, and the crystal forming quality is improved.

The invention discloses sand grains with a water storage structure and a preparation method and application thereof. The method comprises the steps that S1, sand grains with the grain size ranging from 0.1 mm to 1 mm are selected, the grain size distribution meets the condition that D50 is equal to 0.3 mm, clay impurities are screened out, and the sand grains are placed on a sand grain base plate (1) after being cleaned and dried; s2, nano silicate powder is uniformly sprayed on the surfaces of the sand grains through an electrostatic spraying technology, so that a silicate glass layer (5) is formed on the surfaces of the sand grains; s3, a microarray lens (3) is used for dividing a laser source into multiple laser beams, each laser beam irradiates the silicate glass layer (5) on each sand grain in a one-to-one mode, silicate powder and the surface layers of the sand grains are co-melted, and then an amorphous net-shaped structure is formed; s4, argon is used for spraying the amorphous net-shaped structure so that the amorphous net-shaped structure can be rapidly cooled, and then a porous heterojunction structure is formed on the surface of the sand grains; and S5, scanning the silicate glass layer (5) by using the laser again, so that the part of the silicate glass layer (5) is molten again, silicate is decomposed to generate gas, and cooling and curing are performed after bubbles are formed in the molten glass. According to the invention, the sand grains have a certain water storage characteristic.

The invention relates to the field of monocrystalline silicon preparation, particularly provides a monocrystalline silicon rod production method based on a czochralski method, and aims to solve the problem of how to improve the crystallization rate of monocrystalline silicon. In order to achieve the purpose, the single crystal silicon rod production method based on the czochralski method comprises the step of adjusting the flow / flow velocity of inert gas and the liquid opening distance from the lower edge of a guide cylinder to the liquid level of molten silicon in an equal-diameter growth stage based on the equal-diameter growth length of single crystals. On the basis of the equal-diameter growth length of single crystals, the flow / flow velocity of inert gas and the liquid opening distance from the lower edge of a guide cylinder to the liquid level of molten silicon are adjusted, so that the heat convection phenomenon between the inert gas and the molten silicon is controlled, the longitudinal temperature gradient in the single crystal furnace is further controlled, and sufficient heat dissipation capability in crystal growth is ensured; the heat released when the molten silicon is converted into the solid silicon is taken away in time, so that the necessary supercooling degree is formed on the interface of the molten silicon and the solid silicon, the single crystal has enough growth power to keep normal growth, and the crystal forming rate of the single crystal is improved.

The invention relates to an integrated carbon / carbon composite material crucible containing a pyrolytic carbon transition coating, and belongs to the technical field of thermal field parts for monocrystalline silicon. The crucible comprises a carbon / carbon composite material crucible body, a glassy carbon coating, a pyrolytic carbon transition coating and an yttrium oxide coating, wherein the glassy carbon coating not only has a good combination effect with the carbon / carbon composite material crucible body, but also can prevent carbon from escaping; the thermal expansion coefficient of the pyrolytic carbon transition coating is close to that of the glassy carbon coating, and the combination effect of the pyrolytic carbon transition coating and the yttrium oxide coating is good; the yttrium oxide coating has excellent thermal stability and excellent silicon erosion resistance, and can ensure the purity of molten silicon in the single crystal drawing process; the carbon / carbon composite material crucible body is formed by densifying a carbon fiber prefabricated body which is formed by needling and laying a pure net tire sprayed with resin, and the inner surface of the carbon / carbon composite material crucible body is a net tire which is wholly approximately isotropic, so that the overall mechanical strength of the crucible can be ensured, and a good combination effect of the crucible and a subsequent functional coating can also be ensured.

The invention provides a silicon single crystal rod, a preparation method thereof, a silicon wafer, a solar cell and a photovoltaic module. The single crystal silicon rod comprises a doping element, the saturation solid solubility of the doping element is greater than or equal to 5E + 19cm <-3 >, and the doping concentration range of the doping element is 8E + 14cm <-3 > to 3E + 16cm <-3 >. The preparation method comprises the following steps: melting a silicon raw material to obtain molten silicon liquid, and keeping furnace pressure at an initial furnace pressure value in the melting process; the silicon liquid is doped, and the furnace pressure is increased to the maximum value of the furnace pressure while doping is carried out; and in the equal-diameter growth stage, the furnace pressure is controlled to decrease from the highest furnace pressure value until the initial furnace pressure value is reached. According to the silicon single crystal rod and the preparation method thereof, the silicon wafer, the solar cell and the photovoltaic module, the resistivity of the silicon single crystal rod and derivative products thereof can be more uniform and concentrated.

The invention relates to a method for producing a part made of ceramic matrix composite material, the method comprising at least: - a step of forming (10) a fibrous preform; - a step of consolidating (20) the fibrous preform; - an injection step (30), during which a slurry comprising a powder of silicon carbide particles is injected into the fibrous preform, so as to obtain a raw part (100); and - an infiltration step (60), during which a molten silicon-based composition is infiltrated, so as to form a part made of ceramic matrix composite material. The method further comprises: - a step of depositing (40) at least one finishing layer (200) over all or part of the raw part (100); and - a thermocompression step (50), during which the finishing layer (200) is thermocompressed according to a final geometry of the part made of ceramic matrix composite material.

The invention provides a supplementary doping method, a supplementary doping device and a single crystal furnace, and the supplementary doping method comprises the following steps: when the single crystal furnace needs supplementary doping, putting a blended doping material into a material storage pipe of the supplementary doping device, connecting the upper end of a rod body of a movable rod of the supplementary doping device with a tungsten wire rope of the single crystal furnace, and moving the supplementary doping device into an auxiliary chamber of the single crystal furnace through the tungsten wire rope; the tungsten wire rope is moved downwards by a first preset distance, so that a supporting frame of the supplementing and doping device makes contact with a discharging flange in the auxiliary chamber; the tungsten wire rope continues to move downwards by a second preset distance, so that the upper end of a material storage pipe of the supplementing and doping device makes contact with the lower end of the supporting frame; the tungsten wire rope continues to move downwards by a third preset distance, so that the plug of the movable rod is separated from the lower end of the material storage pipe, the doped material in the material storage pipe falls into molten silicon in a crucible in a main chamber of the single crystal furnace, and the problem that in the prior art, the doped material is likely to volatilize and even slide down in the doped material conveying process in a supplementary doping mode is solved.

The invention provides an inner hole plasma spraying high-bonding-strength bonding layer and Y2O3 coating material and a preparation technology thereof. The bonding layer comprises a middle transition layer formed after Si and C on the surface of a graphite matrix are subjected to a chemical reaction. The inner hole plasma spraying high-bonding-strength bonding layer provided by the invention is composed of a silicon carbide transition layer generated by in-situ reaction of molten silicon and carbon on the surface of a graphite matrix, and can form a Si-O-M bridged bond with a subsequent ceramic coating, so that interface bonding is converted into chemical bonding from mechanical anchoring, and the bonding strength is improved. And meanwhile, by utilizing the thermal expansion characteristic of silicon carbide between graphite and ceramic, the purposes of buffering thermal mismatch stress step by step on the atomic scale, blocking high-temperature diffusion of carbon elements and endowing the coating with lasting high bonding strength and thermal cycling stability are achieved.

The utility model relates to the technical field of silica powder equipment, and discloses a molten silica powder cleaning and purifying device which comprises a supporting box, a connecting pipe penetrates through the upper surface of the supporting box and is fixedly connected with the upper surface of the supporting box, a first valve is arranged in the middle section of the connecting pipe, and a screening assembly is arranged in the supporting box. A cleaning tank is fixedly connected to the upper surface of the connecting pipe, a cleaning assembly is arranged in the cleaning tank, a dust collecting assembly is arranged on the upper surface of the cleaning tank, the screening assembly comprises a collecting box, and a handle is fixedly connected to the left surface of the collecting box. According to the dust collection device, through the cooperation of the dust collection pipe, the dust collection fan, the dust collection bag, the supporting plate, the filter plate, the sliding block, the compression spring, the sliding plate and the top block, raised dust can be collected, blockage caused by the raised dust can be prevented, the problem that when fused silica powder is poured into a traditional device, the raised dust is likely to be generated is solved, the time spent on follow-up cleaning work is shortened, and the working efficiency is improved.

The invention discloses cooling and crushing equipment for molten silicon materials, the cooling and crushing equipment comprises a box body, a placing frame and a screening frame, vertical boxes are fixedly connected to the two sides between the top and the bottom of the inner wall of the box body, and the invention relates to the technical field of silicon material processing. According to the cooling and crushing equipment for the molten silicon materials, crushing and screening are conducted at the same time, a containing frame and a screening frame are connected through a vertical plate and pushed into the box body at the same time, the containing frame and the screening frame are driven by a motor to move left and right, and the motor and a push rod which drive the containing frame and the screening frame to move move relatively; a push rod stirs the silicon materials in the screening frame, the screening efficiency is improved, meanwhile, knocking hammers above the containing frame descend while the push rod moves, and when the containing frame moves left and right, toothed plates on the containing frame drive gears to rotate, so that the knocking hammers alternately knock and crush the silicon materials in the containing frame, and the screening efficiency is improved. And collecting and screening are performed through the lower screening frame.

The present application discloses a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes a first surface and a second surface opposite to each other and a side surface connecting the first surface and the second surface. The side surface includes at least one first region; and the at least one first region includes a plurality of fused silicon regions and a first textured region located between at least two of the fused silicon regions. The fused silicon regions have a thickness along a direction perpendicular to the side surface. The solar cell further includes a passivation layer, wherein the passivation layer includes a portion located on the side surface.

An apparatus for continuously growing an ingot includes a growth furnace in which a main crucible where silicon in a molten state is accommodated is located therein to form an ingot; a material supply part for supplying a silicon material in a solid state before the silicon in a molten state is melted; and a preliminary melting part including a preliminary crucible for melting the silicon material in a solid state which is supplied from the material supply part, a heating space in which the preliminary crucible can be heated, and a preliminary crucible heating module for heating the preliminary crucible by an induction heating method, where the silicon in a molten state in the preliminary crucible can be directly supplied to the main crucible.

The invention provides a czochralski method monocrystalline silicon preparation method and a matched growth system. According to the Czochralski method monocrystalline silicon preparation method, a stabilization treatment step is executed after material melting is finished, the stabilization treatment step comprises a magnetic field closing stage and a magnetic field opening stage, and the lifting movement tracks of a quartz crucible in the two stages are the same and the rotation directions are opposite. According to the technical scheme, two-stage stabilization treatment of closing and opening of the magnetic field is set after material melting, and preferably, the lifting track, the total displacement and the rotation rate of the quartz crucible in the two stages are consistent in rate and movement and are opposite in direction, so that impact and scouring on the quartz crucible are reduced, high-temperature softening deformation is relieved, and chemical reaction of molten silicon and the crucible is inhibited; and the crucible loss is delayed.

The invention discloses a spraying process method of a silicon powder purification anti-sticking pan, a crucible and an ingot furnace. The spraying process method comprises the following steps: coating the inner wall of the crucible with a silicon nitride solution to construct a silicon nitride coating; the step of coating the silicon nitride coating with the silica sol comprises the substeps that the weight and the density of a molten silicon powder cake are obtained, and the silicon powder cake is a cake body formed by pressing silicon powder; the bottom area of the crucible is obtained, and according to the bottom area of the crucible, the weight of the molten silicon powder cake and the density of the molten silicon powder cake, the ingot height of the silicon ingot in the crucible after the silicon powder cake is hot-molten into a solution and solidified into the silicon ingot again is obtained; obtaining an ingot height line on the side wall of the crucible according to the ingot height; a painting area is obtained on the side wall of the crucible with the ingot height line as the reference, and the ingot height line is located in the painting area; and silica sol is coated on the brushing area. The silica sol is coated in the brushing area of the side wall of the crucible, so that the impurity content in a silicon ingot can be reduced, and the condition that the silicon ingot is stuck to the crucible can be effectively prevented.

A heater for a single crystal furnace and the single crystal furnace. The heater comprises: a plurality of heater units, the plurality of heater units being connected to form a cylindrical heating body; and a plurality of electrode pins, two adjacent heater units being physically connected by means of one electrode pin, and two ends of each heater unit being respectively and electrically connected to two electrode pins. The number of the electrode pins is an integer multiple of three, and the integer is greater than or equal to two; and the plurality of electrode pins are respectively and electrically connected to a three-phase alternating current of an alternating current power supply. By electrically connecting the electrode pins to the alternating current power supply, and assembling the plurality of heater units to form the heating body, the power efficiency of the power supply is improved, the operating current is reduced, and the stability of molten silicon is enhanced.

The invention discloses a silicon material melting method, a high-quality silicon single crystal rod and a preparation method thereof, and the silicon material melting method comprises the following steps: melting a blocky polycrystalline silicon raw material in a crucible into a silicon liquid, and carrying out stabilization treatment on the molten silicon liquid under the combined action of furnace pressure, pot rotation, a main heater and bottom power, the furnace pressure, the pot rotating power and the bottom adding power are in gradient change, and each gradient value is kept for a certain period of time so as to obtain stably molten silicon liquid; and performing crystal pulling on the stably molten silicon liquid to prepare the high-quality silicon single crystal rod. By means of convection acceleration formed by furnace pressure control and pot rotation control and heating of the crucible by the bottom heater, volatilization of gas on the surface of the silicon liquid is promoted, gas in the silicon liquid can be removed easily, and therefore the pore reject ratio of the silicon single crystal rod can be controlled optimally.

The invention provides a method for improving air holes of a monocrystalline silicon wafer and a middle heater, and belongs to the technical field of monocrystalline silicon production. Comprising the following steps that S1, a bottom heater, a middle heater and an upper heater are sequentially installed on the single crystal furnace, the middle heater comprises a heater body and connecting supporting legs, the heater body comprises a vertical part and an inclined part, the positions of the vertical part and the inclined part correspond to the R part and the bottom of a crucible, and the connecting supporting legs are connected with the vertical part and the inclined part; the R part and the bottom of the crucible are heated through the vertical part and the inclined part; s2, in the material melting process, starting an upper heater, a middle heater and a bottom heater to melt the polycrystalline silicon material in the crucible; and S3, after material melting is finished, closing the middle heater and the bottom heater, and continuing a subsequent crystal pulling process. Through the combined action of the middle heater and the bottom heater, the temperature of the bottom of the crucible is higher than that of the upper part of the crucible, bubbles in molten silicon at the bottom of the crucible can effectively overflow, and therefore air holes of monocrystalline silicon pieces are effectively improved.

The application discloses a molten silicon liquid level estimation method based on a hybrid adaptive resampling particle filter, and comprises the following steps: firstly, processing laser spot images collected by a CCD sensor to obtain observation data of the liquid level; then, establishing a system state equation of the molten silicon liquid level according to a kinematic principle to describe the movement of the liquid level; performing state estimation on a laser centroid vertical coordinate by using a particle filter algorithm, and obtaining a new particle set by using a hybrid adaptive resampling method; after re-normalizing all particle weights, outputting an optimal estimation value; and finally, smoothing the filtered data by using a moving weighted average method, and the smoothed result is the estimation value of the molten silicon liquid level. The application solves the problem that in the prior art, the variance of Gaussian variation is too large, particles jump out of a sampling range, and it is difficult to accurately estimate a real liquid level.

The present invention discloses a molten silicon micropowder cleaning and purification device, which relates to the technical field of silicon micropowder production. The device comprises an external protective shell, the rear surface of the external protective shell is provided with a material unloading and diverting mechanism, the front surface of the external protective shell is provided with a water vapor generating mechanism, the interior of the external protective shell is provided with a material pushing mechanism, the material unloading and diverting mechanism comprises an upper support plate, a hollow frame is fixedly installed on the bottom of the upper support plate, the water vapor generating mechanism comprises a second grafting plate, a water refilling tank is fixedly installed on the interior of the second grafting plate, an extended edge is fixedly installed on the bottom of the water refilling tank, an independent power supply is provided on the interior of the extended edge, and a high-resistance heating wire is fixedly connected to the front surface of the extended edge. This method can fully process the micropowder in each fine-pore sieve bucket, and the related collaborative components have a compact structure, the mid-stage consumption of micropowder processing is small, and a large amount of usable micropowder is placed inside the equipment, thereby avoiding unnecessary waste of raw materials.

The invention provides a crucible preparation method and a crucible structure, and the crucible preparation method comprises the following steps: weighing quartz sand for pretreatment; the weighed quartz sand is poured into a rotating crucible mold for multiple times, and vacuumizing treatment is conducted at the same time, so that the side wall of a crucible is of a multi-layer structure; filling particles are poured into the rotating crucible mold, vacuumizing treatment is conducted at the same time, so that the filling particles are embedded in the inner wall of the crucible, and a concave-convex surface is formed on the inner wall of the crucible; and introducing current into an electrode above the crucible mold to form an electric arc in a high-temperature state, heating the quartz sand in the crucible mold for a preset time, closing the electric arc, cooling, and curing and forming to obtain a crucible body. In the crystal growth process, the embedded filling particles can reduce the direct contact area of molten silicon liquid and the inner wall of the crucible, so that the chemical reaction between the silicon liquid and the crucible is reduced, the service life of the crucible is prolonged, and the oxygen content in a silicon rod is reduced.

This ceramic-based composite material forming method is for forming a ceramic-based composite material through impregnation with a melt silicon, and involves executing: a step for forming a laminate cured body by laminating and curing a prepreg in which reinforcing fibers and a matrix to be impregnated with the melt silicon are integrally formed; a step for forming an impregnation pathway in the formed laminate cured body by carbonizing the laminate cured body; and a step for impregnating, with the melt silicon, the laminate cured body having the impregnation pathway formed therein. A base material resin included in the matrix at least contains a benzoxazine resin.

The invention relates to the technical field of high-efficiency refining of molten metal silicon, and discloses a high-efficiency refining process of molten metal silicon under the synergistic effect of multiple fields, which comprises the following steps: S1, placing molten metal silicon in a refining device which can apply a controllable temperature gradient field and an external electric field; s2, by regulating and controlling the size and the direction of the temperature gradient field, metal impurities are directionally migrated to a low-temperature area in the melt under the action of thermal diffusion and are enriched; s3, an external electric field is applied at the same time, and non-metal impurities are directionally migrated to an electrode area and enriched under the electromigration effect by regulating and controlling the type, intensity and frequency of the electric field; s4, performing cooperative control on the temperature gradient field and an external electric field; and S5, carrying out physical isolation or online removal on the enriched impurity region. Compared with the prior art, the device and the method have the advantages that metal and nonmetal impurities are respectively driven to directionally migrate and enrich, so that efficient separation of the impurities and deep purification of the silicon melt are realized.

An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.

According to the manufacturing method of the ceramic matrix composite turbine blade, a blade inner core prefabricated part comprising a front edge sub-part, a middle sub-part and a tail edge sub-part is manufactured, the front edge sub-part and the tail edge sub-part are manufactured by pressing one-way belt molds arranged in the blade height direction, and the sectional areas of the front edge sub-part and the tail edge sub-part are kept unchanged at the positions of different blade heights; the middle sub-component is formed by mould pressing of a plurality of layers of ceramic fiber spread materials which are spread at different angles; laying a plurality of layers of ceramic fiber spreading materials on the peripheral side of the blade inner core prefabricated part to a preset external size, and carrying out mold pressing and low-temperature curing to obtain a blade prefabricated part; and the blade prefabricated part and the margin plate prefabricated part are spliced to obtain a turbine blade prefabricated part, and then high-temperature carbonization and molten silicon permeation densification treatment are conducted to obtain the finished ceramic matrix composite turbine blade. The method is simple in process and good in formability, and the forming quality and the production efficiency of the turbine blade can be improved. The invention further provides the ceramic matrix composite material turbine blade.

The present application relates to the technical field of solar cells, and discloses a solar cell and a preparation method therefor, and a photovoltaic module, used for solving the problem in the prior art of the photoelectric conversion efficiency of shingled solar cells being affected due to the passivation performance and other performance of shingled solar cells being affected by laser damage areas of the shingled solar cells. The solar cell comprises a first surface and a second surface opposite to each other, and a side surface connecting the first surface and the second surface. The side surface comprises at least one first area, the at least one first area comprising a plurality of fused silicon areas, and a first texture area between at least two fused silicon areas.

The utility model provides a silicon water temperature-resistant ingot mould, and aims to solve the technical problem that the quality of the ingot mould is influenced when cushion blocks such as silicon blocks or graphite blocks are padded at silicon water falling points during continuous discharging and intermittent discharging in the prior art. The silicon water temperature-resistant ingot mold comprises an ingot mold main body; the temperature-resistant assembly is built at the bottom of the ingot mould main body; the temperature-resistant assembly comprises a mold bottom layer and a contact layer which are sequentially arranged at the bottom of the ingot mold body, and the contact layer comprises a blast furnace pouring layer and a refractory brick combination body arranged on the outer side of the blast furnace pouring layer. According to the utility model, the contact layer consisting of the blast furnace pouring layer and the refractory brick assembly is additionally arranged on the ingot mould bottom layer casting and is used as the cooling layer in contact with molten silicon water, so that after the molten silicon water enters the ingot mould, the temperature-resistant masonry material in the ingot mould is in contact with the silicon water to naturally dissipate heat and be cooled and formed, and the quality of a finished silicon plate is ensured.