20 results about "Molten silicon" patented technology

An apparatus for continuously growing an ingot includes a growth furnace in which a main crucible where silicon in a molten state is accommodated is located therein to form an ingot; a material supply part for supplying a silicon material in a solid state before the silicon in a molten state is melted; and a preliminary melting part including a preliminary crucible for melting the silicon material in a solid state which is supplied from the material supply part, a heating space in which the preliminary crucible can be heated, and a preliminary crucible heating module for heating the preliminary crucible by an induction heating method, where the silicon in a molten state in the preliminary crucible can be directly supplied to the main crucible.

The application discloses a molten silicon liquid level estimation method based on a hybrid adaptive resampling particle filter, and comprises the following steps: firstly, processing laser spot images collected by a CCD sensor to obtain observation data of the liquid level; then, establishing a system state equation of the molten silicon liquid level according to a kinematic principle to describe the movement of the liquid level; performing state estimation on a laser centroid vertical coordinate by using a particle filter algorithm, and obtaining a new particle set by using a hybrid adaptive resampling method; after re-normalizing all particle weights, outputting an optimal estimation value; and finally, smoothing the filtered data by using a moving weighted average method, and the smoothed result is the estimation value of the molten silicon liquid level. The application solves the problem that in the prior art, the variance of Gaussian variation is too large, particles jump out of a sampling range, and it is difficult to accurately estimate a real liquid level.

The utility model provides a kind of ball mill for fused silica micro powder production, it is related to ball mill technical field, including grinding jar, throttling mechanism and lubricating mechanism, the throttling mechanism includes first movable plate and second movable plate, the first movable plate is connected with second movable plate by shaft pole swing, the first movable plate and second movable plate are used to throttle the discharge capacity of fused silica material, prevent fused silica material from discharging too much and blocking, in the utility model, corresponding activity of first movable plate and second movable plate makes that silicon micro material can be throttled according to the vertical height of first movable plate and second movable plate to the discharge of silicon micro material, prevent silicon micro material from being put too much and causing blockage, simultaneously, using adsorption cotton and rubber plate can spread lubricating oil at the meshing of first gear and second gear to lubricate, so as to reduce the friction when first gear and second gear mesh.

The utility model relates to the polycrystal silicon production technical field especially, and it is a kind of novel silicon core structure, silicon core subassembly and reduction furnace structure, the silicon core adopts whole tapering structure or ladder type structure;The whole tapering structure specifically refers to: from the top to bottom of silicon core, the cross section size of silicon core continuously decreases along the axial direction;The ladder type structure specifically refers to: from the top to bottom of silicon core, the silicon core includes first silicon core section and second silicon core section connected in turn, and the cross section size of first silicon core section is greater than the cross section size of second silicon core section. Through the novel silicon core structure, silicon core subassembly and reduction furnace structure, can effectively avoid the abnormality such as molten silicon, black inclusion of silicon core in the growth process.

This invention relates to the field of quartz crucible manufacturing technology, specifically to a crucible with a multi-layered structure, its preparation method, and equipment. The multi-layered crucible includes an outer transparent layer, a middle bubble layer, and an inner transparent layer. The outer and inner transparent layers are made of 50-120 mesh primary quartz sand. The straight wall portion of the middle bubble layer is made of 70-120 mesh modified secondary quartz sand. The radius (R) of the middle bubble layer and the bottom of the crucible are made of high-density modified secondary quartz sand. This invention ensures interlayer cleanliness by controlling impurities in the outer and inner transparent layers, preventing impurities from seeping into the molten silicon. The middle bubble layer balances strength and low impurity requirements. The three layers are fused together during preparation, eliminating the risk of delamination and detachment. This design retains the low impurity advantage of a fully transparent crucible while possessing the high strength of an opaque crucible, achieving synergistic performance optimization.

This utility model discloses a monitoring device for the phenomenon of sparking in industrial silicon smelting, belonging to the field of smelting. It includes a high-temperature resistant camera located at the center line of the furnace flame closest to the furnace wall, and a tripod for fixing the camera. The advantages of this utility model compared to existing technologies are: the removable protective lens is designed to be made of crystalline silicon, ensuring that even if the lens breaks and falls into the molten silicon, it will not affect the composition of the molten silicon. Original lens storage components and waste lens storage components are installed on both sides of the high-temperature resistant camera. Through the push of a pneumatic telescopic rod, a new removable protective lens will push the existing removable protective lens in front of the high-temperature resistant camera into the single-opening housing of the waste lens storage component. Afterwards, the pneumatic telescopic rod resets, and the next new removable protective lens will be automatically pushed to the front under the action of a pressure spring, completing the lens reloading process.

This invention relates to monocrystalline silicon, its manufacturing method, and silicon wafers. The invention provides a method for manufacturing monocrystalline silicon with low oxygen concentration and high uniformity in the in-plane distribution of oxygen concentration and resistivity, as well as a silicon wafer. A method for manufacturing monocrystalline silicon based on the MCZ method, in which monocrystalline silicon (3) is pulled from molten silicon (2) in a quartz crucible (11) while applying a hook-shaped magnetic field, wherein the crystal rotation speed during the pulling process is 17 rpm or more and 19 rpm or less. The oxygen concentration of the monocrystalline silicon (3) pulled in this way is 1 × 10⁻⁶. 17 atoms / cm 3 Above and 8×10 17 atoms / cm 3 The following values ​​are provided: ROG in the crystal section orthogonal to the crystal growth direction is less than 15%, and RRG in the crystal section is less than 5%.

The application discloses a graphite / silicon carbide composite phase change energy storage unit and a preparation method thereof. The graphite / silicon carbide composite phase change energy storage unit is prepared by the following basic processes: (1) 3D printing of mixed powder; (2) selective laser sintering of a phase change energy storage unit blank; (3) multiple carbonization and vacuum pressure impregnation densification pretreatment; (4) molten silicon infiltration sealing strengthening treatment; (5) loading of high-temperature molten salt; and (6) packaging. The graphite / silicon carbide composite phase change energy storage unit provided by the application has the advantages of simple preparation process, low cost, easy industrial production, high-temperature resistance, corrosion resistance, good mechanical properties, good packaging performance, high loading rate and the like. The existence of the three-dimensional porous graphite skeleton improves the energy conversion efficiency and heat transfer uniformity, and multiple phase change energy storage units are assembled together to form an energy storage device, which is expected to be applied to peak load shifting, waste heat recycling and reuse and periodic new energy rapid storage and release.

The present application relates to a kind of carbon ceramic brake disc blank body with layered composite structure molding method, comprising the following steps: preparation high-density carbon fiber reinforced layer preform;Preparation short fiber / particle reinforced porous functional layer mixture;High-density carbon fiber reinforced layer preform and porous functional layer mixture are placed into mould according to the layered composite structure of upper high-density carbon fiber reinforced layer preform, middle porous functional layer mixture and lower high-density carbon fiber reinforced layer preform;Molding, obtain carbon ceramic brake disc blank body with functional gradient structure.The intermediate layer porosity gradient design of the present application is from center zone 38% to transition zone 32% to bonding zone 25%, thereby optimizing molten silicon infiltration path, and intermediate layer adopts zoned weighing, to form the matrix that there is difference in radial and circumferential powder density, to further form the rheological supplement located in the radial of blank and the sandwich air duct structure of circumferential side.

Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

This utility model discloses a silicon substrate, a photovoltaic cell, and a photovoltaic module, relating to the field of photovoltaic technology. The silicon substrate includes a first surface and a second surface opposite to each other, and a side surface located between the first surface and the second surface. The side surface includes a chamfered surface obtained by laser cutting. A molten silicon region and a smooth region are formed on the chamfered surface, and the ratio of the total area of ​​the smooth region to the total area of ​​the chamfered surface is greater than or equal to 10%. In the silicon substrate provided by this utility model, by controlling the area of ​​the smooth region, the passivation effect of the chamfered surface of the subsequent solar cell can be guaranteed, effectively improving the photoelectric conversion efficiency and module power.

This invention relates to the field of silicon micropowder technology, and discloses a method and system for preparing high-purity fused silicon micropowder for chip packaging. The system includes a preparation chamber with an inlet at the top and an outlet on one side wall. A feeding track is located within the preparation chamber, similar to the inlet. A rectangular loop frame is fixedly connected to the inner wall of the preparation chamber. In this invention, a high-purity fused silica block is placed into the preparation chamber through the inlet. The block enters the protrusion formed by the rectangular loop frame and the rectangular groove via the feeding track. A motor is then started, driving a transmission mechanism. This mechanism drives a slide rail, which in turn moves a sliding mechanism via a telescopic rod. The sliding mechanism then drives a limiting plate to rise and limit the high-purity fused silica block, causing it to adhere to a grinding disc for powder preparation. This method is practical and suitable for widespread application.

A process for manufacturing a part made of ceramic matrix composite material, the process including infiltrating a pre-densified fibrous structure with a molten infiltration composition including silicon, in order to form a ceramic matrix in a residual porosity of the pre-densified fibrous structure, the pre-densified fibrous structure including a pre-densification matrix including a first silicon carbide layer, a reactive layer including a reactive material that contains carbon and is capable of reacting with the silicon in the infiltration composition, the reactive layer covering the first layer, and a molten silicon wetting layer that is made of silicon carbide or carbon and covers the reactive layer.

The embodiment relates to a single-crystal ingot growth apparatus capable of varying the thermal insulation performance of a thermal shield assembly according to the process. According to one aspect of an embodiment, the apparatus comprises: a chamber; a crucible provided inside the chamber and containing molten silicon; a heater provided around the crucible and heating the crucible; a magnet provided outside the chamber and forming a magnetic field distribution; and a thermal shield assembly located inside the crucible and cooling a single-crystal ingot grown from the molten silicon; wherein the thermal shield assembly provides a single-crystal ingot growth apparatus having varying thermal insulation performance according to changes in the magnetic field of the magnet.

This invention belongs to the field of monocrystalline silicon production technology, specifically relating to a quartz crucible coating structure and its preparation method for reducing the oxygen content of monocrystalline silicon. The quartz crucible coating structure for reducing the oxygen content of monocrystalline silicon includes a coating 1 and a coating 2. Coating 1 is disposed on the inner surface of the quartz crucible and is in a molten state at temperatures above 1200°C. Coating 2 is disposed on top of coating 1 and is in a solid state at temperatures above 1500°C. This invention, by designing a specific coating on the inner surface of the quartz crucible, reduces direct contact between the quartz crucible and the molten silicon, thereby effectively reducing the generation of SiO during monocrystalline silicon pulling, thus reducing the oxygen content in the monocrystalline silicon rod, improving the quality of the monocrystalline silicon, and reducing coating peeling caused by differences in internal stress and thermal expansion coefficients, improving the stability and service life of the coating.

An intake / exhaust device of an apparatus for growing a silicon ingot includes: a chamber of which an inside is maintained in a vacuum atmosphere, and which includes a first section having a main crucible in a center thereof so that an ingot grows therein, and a second section having, on an outer side of an upper end thereof, a preliminary melting device for providing molten silicon to a main crucible; and a vacuum pump connected to the chamber to provide vacuum pressure, wherein a first section of the chamber has a first injection port through which inert gas for removing oxides and impurities inside the chamber flows, and a first exhaust port through which the inert gas is discharged, and the second section of the chamber also has a second injection port through which the inert gas flows, and a second exhaust port through which the inert gas is discharged.

This utility model embodiment provides a heat shield and a single crystal furnace. The heat shield includes a cylindrical body, which includes a straight cylindrical section and a bottom section connected to the lower end of the straight cylindrical section. A clearance channel is provided in the middle of the straight cylindrical section and the bottom section. The bottom section includes an upper end face and a lower end face opposite to each other along the axial direction of the straight cylindrical section, with the upper end face abutting against the straight cylindrical section. Along the radial direction of the straight cylindrical section, the lower end face includes a first concave region, a second concave region, and a first planar region connected in sequence. The side of the first planar region away from the second concave region extends to the clearance channel. The first concave region is recessed towards the straight cylindrical section to form a compression groove. The second concave region is recessed towards the clearance channel to form a guide groove. The guide groove is connected to the compression groove. The guide groove is used to guide the airflow returning to the compression groove in a direction away from the clearance channel, which can increase the volatilization of impurities on the molten silicon surface and achieve the effect of reducing the oxygen content of the single crystal silicon rod.

The application relates to the technical field of photovoltaic monocrystalline silicon preparation, in particular to a silicon rod growing method. The silicon rod growing method provided by the application comprises the following steps: S1, using a zone melting method to prepare a monocrystalline silicon base rod; the monocrystalline silicon base rod is sequentially subjected to ion doping and annealing, a first doping area is formed at the head and tail of the monocrystalline silicon base rod, and a primary mother alloy rod is obtained; S2, the primary mother alloy rod is cut into a silicon core, the silicon core is uniformly mixed with high-purity intrinsic polycrystalline silicon fragments, and a secondary doping material is obtained; S3, high-purity intrinsic polycrystalline silicon blocks are laid in a main crucible, and then the secondary doping material is laid on the surface of the high-purity intrinsic polycrystalline silicon blocks; and then heating and crystal growth are sequentially performed. The method realizes high uniform distribution of the dopant in the molten silicon body, introduces less impurities, and can meet the requirements of the BC battery on high uniformity of the monocrystalline silicon resistivity, low oxygen content and high minority carrier lifetime.

This invention provides an industrial silicon refining apparatus, relating to the field of industrial silicon production technology. The apparatus includes a silicon ladle body and a refining mechanism. A permeable brick is provided at the bottom of the silicon ladle body; and a ladle nozzle is provided on one side of the sidewall of the silicon ladle body. The refining mechanism has at least one venting connector communicating with the permeable brick, and the venting connector is connected to a first venting pipe. The first venting pipe has a second interface for connecting to an external blowing gas inlet pipe; the second interface is located outside the sidewall of the silicon ladle body, and the angle θ between the line connecting the second interface to the central axis of the silicon ladle body and the line connecting the nozzle to the central axis of the silicon ladle body is within the range of 130° to 150°. This invention can prevent the pipes connected to the silicon ladle from being burned by leaked high-temperature molten silicon, reducing safety risks and improving production stability.

The computer device includes at least one processor that communicates with at least one memory device. The at least one processor is programmed to a) receive at least one image of the silicon molten crystal in a crucible, b) run a model that has been trained to segment the at least one image into different classes, c) analyze the segmentation to determine the quality of the crystal, and / or d) approve or reject the crystal based on the analysis.