166 results about "Molten silicon" patented technology

The invention discloses a graphite crucible silicon infiltration resistant coating based on a gradient boron nitride-silicon carbide composite structure and a preparation method thereof. The coating is composed of hexagonal boron nitride nanosheets, beta-type silicon carbide nanowires, yttrium aluminum garnet precursor sol and the like, and effective blocking of 1500-1600 DEG C silicon melt is achieved through gradient structural design and an in-situ self-repairing mechanism. The preparation process comprises the steps of h-BN activation, S C carbon layer deposition, slurry mixing and spraying and segmented heat treatment. The molten silicon contact angle of the coating reaches 158 + / -2 degrees at the temperature of 1550 DEG C, through cracks do not exist after 50 times of thermal shock circulation, the coating is effective after being continuously used for 48 batches under the industrial working condition, the problems of silicon infiltration interface adhesion and thermal shock failure of a traditional graphite crucible are solved, and the coating has remarkable industrial application value.

The invention discloses sand grains with a water storage structure and a preparation method and application thereof. The method comprises the steps that S1, sand grains with the grain size ranging from 0.1 mm to 1 mm are selected, the grain size distribution meets the condition that D50 is equal to 0.3 mm, clay impurities are screened out, and the sand grains are placed on a sand grain base plate (1) after being cleaned and dried; s2, nano silicate powder is uniformly sprayed on the surfaces of the sand grains through an electrostatic spraying technology, so that a silicate glass layer (5) is formed on the surfaces of the sand grains; s3, a microarray lens (3) is used for dividing a laser source into multiple laser beams, each laser beam irradiates the silicate glass layer (5) on each sand grain in a one-to-one mode, silicate powder and the surface layers of the sand grains are co-melted, and then an amorphous net-shaped structure is formed; s4, argon is used for spraying the amorphous net-shaped structure so that the amorphous net-shaped structure can be rapidly cooled, and then a porous heterojunction structure is formed on the surface of the sand grains; and S5, scanning the silicate glass layer (5) by using the laser again, so that the part of the silicate glass layer (5) is molten again, silicate is decomposed to generate gas, and cooling and curing are performed after bubbles are formed in the molten glass. According to the invention, the sand grains have a certain water storage characteristic.

The invention provides an inner hole plasma spraying high-bonding-strength bonding layer and Y2O3 coating material and a preparation technology thereof. The bonding layer comprises a middle transition layer formed after Si and C on the surface of a graphite matrix are subjected to a chemical reaction. The inner hole plasma spraying high-bonding-strength bonding layer provided by the invention is composed of a silicon carbide transition layer generated by in-situ reaction of molten silicon and carbon on the surface of a graphite matrix, and can form a Si-O-M bridged bond with a subsequent ceramic coating, so that interface bonding is converted into chemical bonding from mechanical anchoring, and the bonding strength is improved. And meanwhile, by utilizing the thermal expansion characteristic of silicon carbide between graphite and ceramic, the purposes of buffering thermal mismatch stress step by step on the atomic scale, blocking high-temperature diffusion of carbon elements and endowing the coating with lasting high bonding strength and thermal cycling stability are achieved.

The present application discloses a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes a first surface and a second surface opposite to each other and a side surface connecting the first surface and the second surface. The side surface includes at least one first region; and the at least one first region includes a plurality of fused silicon regions and a first textured region located between at least two of the fused silicon regions. The fused silicon regions have a thickness along a direction perpendicular to the side surface. The solar cell further includes a passivation layer, wherein the passivation layer includes a portion located on the side surface.

An apparatus for continuously growing an ingot includes a growth furnace in which a main crucible where silicon in a molten state is accommodated is located therein to form an ingot; a material supply part for supplying a silicon material in a solid state before the silicon in a molten state is melted; and a preliminary melting part including a preliminary crucible for melting the silicon material in a solid state which is supplied from the material supply part, a heating space in which the preliminary crucible can be heated, and a preliminary crucible heating module for heating the preliminary crucible by an induction heating method, where the silicon in a molten state in the preliminary crucible can be directly supplied to the main crucible.

The invention provides a czochralski method monocrystalline silicon preparation method and a matched growth system. According to the Czochralski method monocrystalline silicon preparation method, a stabilization treatment step is executed after material melting is finished, the stabilization treatment step comprises a magnetic field closing stage and a magnetic field opening stage, and the lifting movement tracks of a quartz crucible in the two stages are the same and the rotation directions are opposite. According to the technical scheme, two-stage stabilization treatment of closing and opening of the magnetic field is set after material melting, and preferably, the lifting track, the total displacement and the rotation rate of the quartz crucible in the two stages are consistent in rate and movement and are opposite in direction, so that impact and scouring on the quartz crucible are reduced, high-temperature softening deformation is relieved, and chemical reaction of molten silicon and the crucible is inhibited; and the crucible loss is delayed.

A heater for a single crystal furnace and the single crystal furnace. The heater comprises: a plurality of heater units, the plurality of heater units being connected to form a cylindrical heating body; and a plurality of electrode pins, two adjacent heater units being physically connected by means of one electrode pin, and two ends of each heater unit being respectively and electrically connected to two electrode pins. The number of the electrode pins is an integer multiple of three, and the integer is greater than or equal to two; and the plurality of electrode pins are respectively and electrically connected to a three-phase alternating current of an alternating current power supply. By electrically connecting the electrode pins to the alternating current power supply, and assembling the plurality of heater units to form the heating body, the power efficiency of the power supply is improved, the operating current is reduced, and the stability of molten silicon is enhanced.

The application discloses a molten silicon liquid level estimation method based on a hybrid adaptive resampling particle filter, and comprises the following steps: firstly, processing laser spot images collected by a CCD sensor to obtain observation data of the liquid level; then, establishing a system state equation of the molten silicon liquid level according to a kinematic principle to describe the movement of the liquid level; performing state estimation on a laser centroid vertical coordinate by using a particle filter algorithm, and obtaining a new particle set by using a hybrid adaptive resampling method; after re-normalizing all particle weights, outputting an optimal estimation value; and finally, smoothing the filtered data by using a moving weighted average method, and the smoothed result is the estimation value of the molten silicon liquid level. The application solves the problem that in the prior art, the variance of Gaussian variation is too large, particles jump out of a sampling range, and it is difficult to accurately estimate a real liquid level.

The present invention discloses a molten silicon micropowder cleaning and purification device, which relates to the technical field of silicon micropowder production. The device comprises an external protective shell, the rear surface of the external protective shell is provided with a material unloading and diverting mechanism, the front surface of the external protective shell is provided with a water vapor generating mechanism, the interior of the external protective shell is provided with a material pushing mechanism, the material unloading and diverting mechanism comprises an upper support plate, a hollow frame is fixedly installed on the bottom of the upper support plate, the water vapor generating mechanism comprises a second grafting plate, a water refilling tank is fixedly installed on the interior of the second grafting plate, an extended edge is fixedly installed on the bottom of the water refilling tank, an independent power supply is provided on the interior of the extended edge, and a high-resistance heating wire is fixedly connected to the front surface of the extended edge. This method can fully process the micropowder in each fine-pore sieve bucket, and the related collaborative components have a compact structure, the mid-stage consumption of micropowder processing is small, and a large amount of usable micropowder is placed inside the equipment, thereby avoiding unnecessary waste of raw materials.

The invention relates to the technical field of high-efficiency refining of molten metal silicon, and discloses a high-efficiency refining process of molten metal silicon under the synergistic effect of multiple fields, which comprises the following steps: S1, placing molten metal silicon in a refining device which can apply a controllable temperature gradient field and an external electric field; s2, by regulating and controlling the size and the direction of the temperature gradient field, metal impurities are directionally migrated to a low-temperature area in the melt under the action of thermal diffusion and are enriched; s3, an external electric field is applied at the same time, and non-metal impurities are directionally migrated to an electrode area and enriched under the electromigration effect by regulating and controlling the type, intensity and frequency of the electric field; s4, performing cooperative control on the temperature gradient field and an external electric field; and S5, carrying out physical isolation or online removal on the enriched impurity region. Compared with the prior art, the device and the method have the advantages that metal and nonmetal impurities are respectively driven to directionally migrate and enrich, so that efficient separation of the impurities and deep purification of the silicon melt are realized.

An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.

According to the manufacturing method of the ceramic matrix composite turbine blade, a blade inner core prefabricated part comprising a front edge sub-part, a middle sub-part and a tail edge sub-part is manufactured, the front edge sub-part and the tail edge sub-part are manufactured by pressing one-way belt molds arranged in the blade height direction, and the sectional areas of the front edge sub-part and the tail edge sub-part are kept unchanged at the positions of different blade heights; the middle sub-component is formed by mould pressing of a plurality of layers of ceramic fiber spread materials which are spread at different angles; laying a plurality of layers of ceramic fiber spreading materials on the peripheral side of the blade inner core prefabricated part to a preset external size, and carrying out mold pressing and low-temperature curing to obtain a blade prefabricated part; and the blade prefabricated part and the margin plate prefabricated part are spliced to obtain a turbine blade prefabricated part, and then high-temperature carbonization and molten silicon permeation densification treatment are conducted to obtain the finished ceramic matrix composite turbine blade. The method is simple in process and good in formability, and the forming quality and the production efficiency of the turbine blade can be improved. The invention further provides the ceramic matrix composite material turbine blade.

The present application relates to the technical field of solar cells, and discloses a solar cell and a preparation method therefor, and a photovoltaic module, used for solving the problem in the prior art of the photoelectric conversion efficiency of shingled solar cells being affected due to the passivation performance and other performance of shingled solar cells being affected by laser damage areas of the shingled solar cells. The solar cell comprises a first surface and a second surface opposite to each other, and a side surface connecting the first surface and the second surface. The side surface comprises at least one first area, the at least one first area comprising a plurality of fused silicon areas, and a first texture area between at least two fused silicon areas.

The utility model provides a silicon water temperature-resistant ingot mould, and aims to solve the technical problem that the quality of the ingot mould is influenced when cushion blocks such as silicon blocks or graphite blocks are padded at silicon water falling points during continuous discharging and intermittent discharging in the prior art. The silicon water temperature-resistant ingot mold comprises an ingot mold main body; the temperature-resistant assembly is built at the bottom of the ingot mould main body; the temperature-resistant assembly comprises a mold bottom layer and a contact layer which are sequentially arranged at the bottom of the ingot mold body, and the contact layer comprises a blast furnace pouring layer and a refractory brick combination body arranged on the outer side of the blast furnace pouring layer. According to the utility model, the contact layer consisting of the blast furnace pouring layer and the refractory brick assembly is additionally arranged on the ingot mould bottom layer casting and is used as the cooling layer in contact with molten silicon water, so that after the molten silicon water enters the ingot mould, the temperature-resistant masonry material in the ingot mould is in contact with the silicon water to naturally dissipate heat and be cooled and formed, and the quality of a finished silicon plate is ensured.

The invention provides a method and system for controlling the liquid opening distance in the crystal pulling process and electronic equipment, and belongs to the technical field of single crystal preparation.The method for controlling the liquid opening distance in the crystal pulling process comprises the steps that the distance from the lower edge of a guide cylinder to the molten silicon liquid level is collected according to a preset period, and the actual liquid opening distance is obtained; calculating a compensation value of the rising speed of the crucible according to the difference value between the actual liquid opening distance and the initial value of the liquid opening distance, superposing the compensation value of the rising speed of the crucible and the actual rising speed of the crucible in the previous period to finally obtain the actual rising speed of the crucible, and controlling the crucible to rise according to the actual rising speed of the crucible. Therefore, the liquid opening distance in each preset period is adjusted, the actual working condition difference and the crystal growth state of different single crystal furnaces are adapted, fluctuation of the liquid opening distance is prevented, and the quality of a single crystal silicon rod is improved.

The invention discloses a method for regulating and controlling the axial resistivity of doped monocrystalline silicon and a single crystal furnace, and relates to the technical field of doped monocrystalline silicon, and the method comprises the following steps: adding a doping agent into molten silicon according to the amount required by the upper limit of the resistivity of monocrystalline silicon of a first specification as a first addition amount; drawing monocrystalline silicon of a first specification, obtaining the resistivity of the tail part of the monocrystalline silicon of the first specification, and determining the residual amount of a dopant in the molten silicon according to the resistivity of the tail part of the monocrystalline silicon, the mass of the residual molten silicon and the resistivity-doping concentration curve graph; determining the supplement amount of the dopant according to the doping amount required by the resistivity upper limit of the monocrystalline silicon of the second specification, the residual mass of the melt and the residual amount of the dopant in the molten silicon; and after the doping agent is added into the residual molten silicon according to the supplementary amount, drawing the monocrystalline silicon of the second specification. According to the method, the difference between the head resistivity and the tail resistivity of the doped monocrystalline silicon is reduced, namely, the uniformity of the axial resistivity of the doped monocrystalline silicon is improved.

The utility model discloses a fused silica powder processing and smashing device which comprises a shell, a smashing mechanism, an interval discharging mechanism, a vibration screening mechanism and a collecting mechanism, a feeding opening is formed in the top face of the shell, two guide plates are arranged below the feeding opening and connected with the side wall of the shell, a door body is arranged on one side of the shell, and a discharging opening is formed in the other side of the shell. The crushing mechanism is arranged below the guide plate, a guide frame is arranged below the crushing mechanism, the guide frame is connected with the inner wall of the shell, the interval discharging mechanism comprises two fixing plates, two rotating plates, two connecting shafts and a driving mechanism, the two fixing plates are connected with the two side walls of the shell respectively, the rotating plates are hinged to the fixing plates through the connecting shafts, and the driving mechanism drives the crushing mechanism to rotate. And the rotating plate is positioned below the guide frame. Therefore, the crushed silicon raw materials can be intermittently discharged, and excessive materials are prevented from being accumulated on the vibration screening mechanism, so that the screening efficiency is effectively improved.

The invention discloses a near-net forming method for a diamond ceramic matrix composite material, and belongs to the field of ceramic materials. The invention aims to solve the problems of high mold loss, difficulty in near-net forming and low diamond content in the prepared composite material in the existing diamond / silicon carbide preparation process. The method comprises: 1, raw material pretreatment; 2, preparing silicon-carbon coated diamond micro powder; 3, carrying out body temperature compression molding on the blank; 4, degreasing treatment; 5, multi-stage pseudo-vacuum graphite cavity molten silicon self-loss reactive sintering; and sixthly, step-by-step gradient grinding treatment is conducted. According to the method, a reusable multi-stage pseudo-vacuum graphite cavity is constructed based on the graphite mold to inhibit expansion of the diamond composite material caused by rapid volatilization of silicon steam in a vacuum environment, loss of silicon in a green body under high-temperature sintering is inhibited through graphite paper, and reaction of carbon and silicon is promoted to generate silicon carbide; the near-net forming of the high-density diamond ceramic matrix composite without mold damage is realized, the high diamond content is ensured, and the cost is reduced.

The utility model provides a kind of ball mill for fused silica micro powder production, it is related to ball mill technical field, including grinding jar, throttling mechanism and lubricating mechanism, the throttling mechanism includes first movable plate and second movable plate, the first movable plate is connected with second movable plate by shaft pole swing, the first movable plate and second movable plate are used to throttle the discharge capacity of fused silica material, prevent fused silica material from discharging too much and blocking, in the utility model, corresponding activity of first movable plate and second movable plate makes that silicon micro material can be throttled according to the vertical height of first movable plate and second movable plate to the discharge of silicon micro material, prevent silicon micro material from being put too much and causing blockage, simultaneously, using adsorption cotton and rubber plate can spread lubricating oil at the meshing of first gear and second gear to lubricate, so as to reduce the friction when first gear and second gear mesh.

The utility model belongs to the technical field of production of monocrystalline silicon, and particularly relates to a single crystal furnace which comprises a furnace body, the crucible is arranged in the furnace body in a liftable manner; the exhaust device is arranged below the crucible and comprises an air suction end and an exhaust end, the air suction end is located in the furnace body, the exhaust end is communicated to the outside of the furnace body, and at least the air suction end synchronously ascends and descends along with the crucible. When the single crystal furnace disclosed by the utility model is used for drawing a single crystal silicon rod, the liquid level of a molten silicon material in the crucible is gradually reduced, the crucible is gradually lifted, and the suction end of the exhaust device is lifted along with the crucible. According to the scheme, the air suction end can synchronously lift along with the crucible, so that the distance between the opening edge of the crucible and the air suction end can be kept constant, on one hand, the exhaust path of SiO from the bottom of the crucible to the exhaust device is effectively shortened, and on the other hand, vortexes are prevented from being formed below the crucible; the problem that the oxygen content of the silicon single crystal rod is increased due to the fact that discharging of SiO is blocked can be solved.

An ingot growing apparatus is disclosed. An ingot growing apparatus according to an embodiment of the present invention comprises: a growth furnace in which a main crucible for receiving molten silicon in order to grow an ingot is disposed; a susceptor formed so as to surround the outer surface of the main crucible and including a plurality of heating members which are electrically insulated from each other; and a heater which generates a magnetic field and heats the plurality of heating members through electromagnetic induction by the magnetic field, wherein the plurality of heating members form loops along the outer surface of the main crucible.

The invention relates to the technical field of silicon material preparation and semiconductor process, and discloses a high-purity silicon preparation and monocrystalline silicon growth integrated process based on a silane decomposition method, which comprises the following steps: carrying out silane synthesis in a silicon carbide-lined fluidized bed reactor, separating a reaction product by a cyclone separator at the top of the reactor, and drying the reaction product; industrial silicon powder and high-purity hydrogen react under set conditions to generate silane gas, the synthesized silane gas is introduced into a three-section type vertical pyrolyzing furnace and sequentially passes through a preheating zone, a main reaction zone and a cooling zone, silane is gradually decomposed in the preheating zone and the main reaction zone to generate high-purity silicon powder, undecomposed gas is recycled after being condensed and adsorbed, and the high-purity silicon powder is obtained. High-purity silicon powder is molten in a molten silicon liquid tank, molten silicon liquid is formed through electromagnetic induction heating, the molten silicon liquid is drawn into monocrystalline silicon through a continuous straight-pulling single crystal furnace, and the growth diameter of crystals is controlled in real time through a laser range finder, so that efficient preparation of high-purity silicon and monocrystalline silicon is achieved, and the production requirement of semiconductor-grade monocrystalline silicon is met.

The invention relates to a preparation method for reducing the head resistivity of a heavily phosphorus-doped silicon single crystal, which comprises the following steps of: melting a raw polycrystalline silicon raw material to obtain a molten silicon melt; performing a high-temperature exhaust treatment process on the molten silicon melt, and exhausting foreign gas in the silicon melt; carrying out a primary stabilization process on the silicon melt subjected to the high-temperature exhaust treatment process; carrying out a doping process on the silicon melt subjected to the one-time stabilization process; and carrying out a secondary stabilization process on the silicon melt subjected to the doping process.

This invention discloses a heater and a hot zone for a single crystal furnace, relating to the field of single crystal manufacturing technology. It provides a technical solution to reduce the oxygen content of single crystal silicon by decreasing the heating zone of the heater without shortening its heating area. The heater provided by this invention is applied in the hot zone of a single crystal furnace. The heater is disposed on the outer periphery of a crucible in the hot zone of the single crystal furnace and is used to heat at least the surface of the molten silicon in the crucible. The heater includes: multiple heating zones and multiple slit zones, each slit zone being connected between two adjacent heating zones; the openings of the multiple slit zones have the same opening direction, and the width of the slit zone is greater than or equal to the width of the heating zone.

This invention belongs to the technical field of secondary resource recycling and reuse of rare and precious metals, rare and dispersed metals, and rare earth metals, and relates to a method for co-enriching rare and precious metals in waste materials using silicon and a low-frequency electric arc furnace. The method utilizes a low-frequency electric arc furnace as the smelting equipment. The waste material containing rare and precious metals to be treated and a slag-forming agent are mixed in a certain proportion, formed into pellets, dried, and then added to the low-frequency electric arc furnace for melting to obtain pre-melted slag. Industrial silicon or waste silicon materials are crushed, pelletized, dried, and then added to the low-frequency electric arc furnace for high-temperature melting and collection to improve the reaction efficiency between materials. After a period of reaction, silicon slag is separated to obtain molten silicon and smelting slag. After removing the smelting slag, pre-melted slag is added for continued melting and heat preservation. After multiple melting and enrichment processes, molten silicon enriched with rare and precious metals is obtained. The molten silicon is poured out and cooled to obtain silicon ingots enriched with rare and precious metals. The silicon ingots are crushed, ground, and the rare and precious metals are separated and purified. The silicon material can be reused as a silicon source or used as a raw material for producing solar-grade silicon. The present invention has a simple process and low energy consumption cost, which is conducive to industrial application.

The invention discloses a method for preparing a monocrystalline silicon ingot by recovering seed crystals. The method comprises the following steps: laying a growth surface with the crystal orientation of 1t at the bottom of a crucible; 110gt, 110gt; forming a seed crystal layer from the monocrystalline silicon seed crystal; adding a molten silicon material above the seed crystal layer, and enabling the molten silicon material to grow along the crystal orientation structure of the seed crystal, thereby obtaining lt; 110gt, 110gt; growing a cast monocrystalline silicon ingot in a crystal orientation, cutting the cast monocrystalline silicon ingot into a plurality of silicon blocks along the growth direction, removing areas with short minority carrier lifetime at the bottom and the top, and at the position far away from a seed crystal splicing seam defect expansion area, along the direction parallel to the growth direction, the side crystal orientation is lt; 100 gt; or lt; 110gt, 110gt; cutting in the direction to obtain recycled seed crystals, splicing and laying the recycled seed crystals again, and arranging a molten silicon material to incompletely melt the recycled seed crystals to prepare a new cast monocrystalline silicon ingot. By optimizing the seed crystal recovery process, the defect density and the metal pollution in the casting of the monocrystalline silicon ingot are reduced, the electrical property and the production yield of the product are improved, and the method has good economical efficiency and wide application prospects.

The invention relates to the technical field of impurity directional migration and separation, in particular to an impurity directional migration and separation method based on a molten metal silicon self-purification principle, which comprises the following steps of: putting a metal silicon raw material into a special quartz crucible with a zigzag concave-convex inner side wall, heating and vacuumizing to 1-100Pa by using a vacuum melting furnace, and injecting protective gas; when the temperature is raised to 1450-1750 DEG C, introducing specific gas from the bottom to promote the impurities to react and migrate, and keeping the temperature for 1-4 hours; and the crucible is controlled to descend, so that the silicon melt liquid is directionally solidified from bottom to top, the cooling speed is 30-50 DEG C / min, and the descending speed is 0.1-2 mm / min. And taking out the crucible after cooling, and cutting off the top and the adhesive part of the silicon ingot. The problems that in the prior art, directional migration and separation of impurities are difficult, solidification and segregation are difficult to control, crucible guiding is insufficient, and scientific control over slagging constituent matching and using is lacked are solved.

The utility model relates to the polycrystal silicon production technical field especially, and it is a kind of novel silicon core structure, silicon core subassembly and reduction furnace structure, the silicon core adopts whole tapering structure or ladder type structure;The whole tapering structure specifically refers to: from the top to bottom of silicon core, the cross section size of silicon core continuously decreases along the axial direction;The ladder type structure specifically refers to: from the top to bottom of silicon core, the silicon core includes first silicon core section and second silicon core section connected in turn, and the cross section size of first silicon core section is greater than the cross section size of second silicon core section. Through the novel silicon core structure, silicon core subassembly and reduction furnace structure, can effectively avoid the abnormality such as molten silicon, black inclusion of silicon core in the growth process.

The invention belongs to the technical field of semiconductor material processing, and particularly relates to a method for improving the single crystal particle defect yield and a product thereof, and the method comprises the following steps: under a fixed pulling speed, the condition of a contact interface between a molten silicon liquid and a crystal bar can be changed by deliberately fluctuating a liquid port distance, so that the growth rate and diameter of the crystal bar are influenced, and the yield of the single crystal particle defect is improved. By accurately controlling the fluctuation range of the liquid opening distance, the particle defect in the crystal can be reduced, and the quality and yield of the silicon single crystal rod are improved. Specifically, when the liquid opening distance is increased, the contact area between the molten silicon liquid and the crystal bar is reduced, and the growth rate of the crystal bar is possibly reduced; conversely, when the liquid opening distance is reduced, the contact area is increased, and the growth rate of the crystal bar can be increased. By accurately controlling the fluctuation range and frequency of the liquid port distance, the diameter of the crystal bar can fluctuate within the range of + / -0.3 mm, and the tiny diameter change is beneficial to optimization of stress distribution and crystal structure in the crystal bar, so that generation of particle defects is reduced, and the yield of the particle defects is improved by about 18%.

This application provides a magnetron crystal pulling device, including a single crystal furnace, a crucible, and a magnetron assembly. The crucible is disposed within the single crystal furnace and is used to hold molten silicon. The magnetron assembly is positioned above the molten silicon. The magnetron assembly includes a ring magnet with a crystal pulling channel for inserting a single crystal silicon rod. The ring magnet is positioned close to the molten silicon to form a hook-shaped magnetic field within the molten silicon. The magnetic field strength of the hook-shaped magnetic field at the surface of the molten silicon is greater than or equal to 0.1 millitrile. The hook-shaped magnetic field inside the molten silicon can effectively suppress longitudinal thermal convection, lateral thermal convection, and thermal convection in other directions, thus reducing the scouring of the crucible wall by the molten silicon, lowering the impurity content in the molten silicon, and improving the crystal pulling quality. Moreover, the magnetron crystal pulling device has a simple structure and can be implemented with only minor modifications to existing crystal pulling devices, making it widely applicable and cost-effective.