1299 results about "Boron containing" patented technology

A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

This invention provides, among other things, novel compounds useful for treating bacterial infections, pharmaceutical compositions containing such compounds, as well as combinations of these compounds with at least one additional therapeutically effective agent.

Compounds and methods of treating anti-inflammatory conditions are disclosed.

A covalently linked organic network includes a plurality of boron-containing clusters linked together by a plurality of linking groups. The covalently linked organic networks are characterized by having each linking group bonded to at least two distinct boron-containing clusters.

This invention relates to, among other items, 6-substituted benzoxaborole compounds and their use for treating bacterial infections.

Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.

The invention relates to a lithium ion battery composite cathode material and a preparation method. The cathode material comprises a hard carbon precursor material containing hetero atoms, and natural spherical graphite, wherein the hard carbon precursor material selects one or more than two of phenolic resin, polyfurfural, furan resin, polyvinyl alcohol, epoxide resin or polyacrylonitrile as raw materials, and accounts for 5 to 45 percent of the natural spherical graphite by mass; modifier of the hetero atoms is boron-containing modifier including boric acid and diboron trioxide, phosphor-containing modifier including phosphoric acid and phosphorus pentoxide, and nitrogen-containing modifier HNO3; and one of the modifiers accounts for 5 to 35 percent of the hard carbon precursor by mass. An analog battery formed by the cathode material which is prepared by the method has the capacity over 350 mAH/g and first coulomb efficiency up to 95.8 percent, and has good circulation performance. The preparation method has the advantages of low cost and simple process.

The invention relates to a nano carbon doped electrocatalyst for a fuel cell, and application of the nano carbon doped electrocatalyst. The electrocatalyst is prepared by adopting the steps of: complexing a nitrogen-containing and/or boron-containing organic precursor and a transition metal salt to form a composite; adding nano carbon as a carrier, and heating and reacting a mixture by adopting a microwave radiation method; and after the reaction is complete, filtering and drying, placing a product obtained after the reaction in an inert atmosphere and/or reducing atmosphere, and treating at a high temperature of 500-1500 DEG C to obtain the nano carbon doped electrocatalyst. The nano carbon doped electrocatalyst is very low in cost, high in activity and stability and excellent in anti-poisoning capacity.

A method of fabricating an integrated circuit device comprises etching a trench in a substrate and forming a dynamic random access memory (DRAM) cell having a storage capacitor at a lower end and an overlying vertical metal oxide semiconductor field effect transistor (MOSFET) comprising a gate conductor and a boron-doped channel. The method includes forming trenches adjacent the DRAM cell and a silicon-oxy-nitride isolation liner on either side of the DRAM cell, adjacent the gate conductor. Isolation regions are then formed in the trenches on either side of the DRAM cell. Thereafter, the DRAM cell, including the boron-containing channel region adjacent the gate conductor, is subjected to elevated temperatures by thermal processing, for example, forming a support device on the substrate adjacent the isolation regions. The nitride-containing isolation liner reduces segregation of the boron in the channel region, as compared to an essentially nitrogen-free oxide-containing isolation liner.

A silicon wafer used in manufacturing GaN for LEDs includes a silicon substrate, a buffer layer of boron aluminum nitride (B_xAl_1-xN) and an upper layer of GaN, for which 0.35≦x≦0.45. The BAlN forms a wurtzite-type crystal with a cell unit length about two-thirds of a silicon cell unit length on a Si(111) surface. The C-plane of the BAlN crystal has approximately one atom of boron for each two atoms of aluminum. Across the entire wafer substantially only nitrogen atoms of BAlN form bonds to the Si(111) surface, and substantially no aluminum or boron atoms of the BAlN are present in a bottom-most plane of atoms of the BAlN. A method of making the BAlN buffer layer includes preflowing a first amount of ammonia equaling less than 0.01% by volume of hydrogen flowing through a chamber before flowing trimethylaluminum and triethylboron and then a subsequent amount of ammonia through the chamber.

The invention discloses a modified natural graphite material used in lithium ion battery negative electrodes. With a core-shell structure, the material comprises an inner core and a shell coated on the inner-core. The inner-core is composed of natural graphite, and the shell coated on the core is composed of an inner shell and an outer shell. The inner shell is a boron-containing hard carbon layer, and the outer shell is a soft carbon layer. The boron-containing hard carbon layer is coated on natural graphite, and the soft carbon layer is coated on the boron-containing hard layer. The method has advantages of simple technology, suitability for mass production, low graphitization processing temperature, and low cost. With advantages of small specific surface area, high tap density, high first efficiency, high specific capacity, excellent cycling performance, and good rate performance, the modified natural graphite material can be applied in power batteries.

A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers to create defect regions, for example by plasma-treating the surface to be bonded with a or boron-containing plasmas such as a B2H6 plasma. The surface defect regions may also be created by ion implantation, preferably using boron. The surfaces may also be amorphized. The treated surfaces are placed together, thus forming an attached pair at room temperature in ambient air. The bonding energy reaches approximately 400 mJ/m2 at room temperature, 900 mJ/m2 at 150° C., and 1800 mJ/m2 at 250° C. The bulk silicon fracture energy of 2500 mJ/m2 was achieved after annealing at 350-400° C. The release of hydrogen from B-H complexes and the subsequent absorption of the hydrogen by the plasma induced modified layers on the bonding surfaces at low temperature is most likely responsible for the enhanced bonding energy.

The present invention relates to an organic light emission diode device (OLED) structure, especially to a high-efficiency organic light emission diode device of a B-containing compound. The organic light emission diode device structure comprises an anode, a cavity injection/transmission layer, a luminescent layer, an electron injection/transmission layer and a cathode, wherein the luminescent layer comprises main body materials and doped materials; the main body materials are formed by signal materials and are also formed by mixing materials with different structures; and the doped materials are organic compounds containing boron, the energy level difference of the singlet state and the triplet state is not larger than 0.2ev, and the energy level of the singlet state and the energy level of the triplet state of the of the main body materials are both higher than that of the doped materials to prevent energy from passback and avoid reduction of the device luminescence efficiency. The present invention further provides a preparation method of the organic light emission diode device. The preparation method is utilized to obtain the organic light emission diode device which is high in efficiency, long in life and high in purity.

The invention discloses a boron-containing organic electroluminescent compound and a use thereof. The compound has a general structural formula (1). The compound has good fluorescence quantum efficiency and electroluminescent efficiency, easily forms an amorphous film and has good thermal stability. Therefore, the compound can be used as a luminescent layer doping material or a main body material in an organic electroluminescent device.

The present invention provides nonwoven glass composites formed from an essentially boron free glass wool and an essentially boron free chopped glass fiber, used as a reinforcing material. The nonwoven glass composites are suitable for air filtration apparatus and can be used in the semiconductor industry where the elimination of boron from clean rooms is of importance.