30 results about "Boron containing" patented technology

A boron-containing polyethylene glycol fatty acid ester surfactant belongs to the field of organic chemistry and functional materials. The boron-containing polyethylene glycol fatty acid ester surfactant is prepared as follows: polyethylene glycol (PEG), boric acid and fatty acid are used as raw materials, first esterification reaction of the PEG and the boric acid is performed, then esterification reaction of the PEG and the fatty acid is performed to obtain boron-containing poly ethylene glycol fatty acid ester; by changing the species of fatty acids and catalysts and molecular weight of the PEG, the esterification rate can be enhanced, the boron-containing poly ethylene glycol fatty acid ester product can be used as a surfactant, and the boron-containing poly ethylene glycol fatty acid ester can reduce water surface tension and has good emulsifying properties.

This invention provides a hardened body utilizing slag containing free MgO, such as steelmaking slag. This hardened body suppresses volume expansion caused by hydration reactions based on free MgO and addresses insufficient strength. The hardened body utilizing slag containing free MgO is manufactured by adding water to a mixture containing slag containing free MgO as a material, kneading the mixture, and then solidifying the mixture. In this hardened body, the unit amount of slag containing free MgO is 2000 kg / m³. 3 The following is the unit weight of alumina cement: 75 kg / m³ 3 Above and 200kg / m 3 The following unit weight of blast furnace slag powder is 330 kg / m³. 3 Above and 530kg / m 3 The following calculations use B2O3 as the unit amount for boron-containing substances, which is 0.5 kg / m³. 3 Above and 4.0 kg / m 3 the following.

The application discloses a kind of multicomponent boride and preparation method thereof, belong to carbide ceramic technical field.The application uses multicomponent alloy bulk as raw material, after hydrogenation treatment is carried out to raw material, then using the method of organic carbon source coating obtains carbon-coated mixture, then carbon-coated mixture is mixed with boric acid and is dried before sintering to obtain multicomponent boride.The above preparation method can avoid the oxygen impurity brought by conventional metal powder as raw material, avoid multicomponent metal hydride and boric acid contact reaction to generate boride at high temperature, at the same time organic carbon source can reduce boron element in boric acid and diffuse into carbide lattice, and react with excess oxygen element to form CO / CO2 gas, no second phase oxide impurity is formed in boride, and only needs to be at relatively low temperature 800-1300 DEG C, complete carbonization, boronization process, greatly reduce process condition, it is favorable to scale production multicomponent boride.

This invention discloses a method for preparing a multi-level micro / nano-structured composite material for nuclear radiation detection, relating to the field of nuclear radiation detection technology. Specifically, it utilizes gold-sulfur self-assembly technology to modify the surface of a gold nanoparticle core with boron-containing molecules, obtaining a functionalized gold nanoparticle core. This core is then used as a seed, with chloroauric acid as the gold source, to grow a gold nanoshell. Finally, silver nitrate is used as the silver source to deposit a silver nanoshell in situ, resulting in a multi-level micro / nano-structured composite material. This multi-level micro / nano-structure uses gold nanoparticles as the core, boron-containing molecules as the neutron detection medium, the gold nanoshell as the surface-enhanced Raman scattering (SERS) carrier, and the silver nanoshell as the gamma-ray detection medium. This material possesses both neutron and gamma-ray detection capabilities, and the neutron response of the boron-containing molecules and the gamma-ray response of the silver nanoshell can be quantitatively measured using SERS and LSPR spectroscopy, respectively. This enables efficient discrimination of mixed radiation field doses and has broad application prospects in the field of nuclear radiation detection.

This application provides a coating system and method for the inner wall surface of a nuclear fusion reactor, and a boronizing reaction system for a fusion device. The coating system includes an inlet assembly, a solid heating assembly, a solid container, and a discharge electrode. The solid container contains solid boron trioxide, and the discharge electrode is located on the inner wall of the reaction chamber of the nuclear fusion reactor. The solid heating assembly is used to heat the solid container. The inlet assembly is used to introduce hydrogen gas into the reaction chamber. The discharge electrode is used to generate positive ions containing boron compounds through glow discharge in the reaction chamber. The positive ions are accelerated in the sheath electric field at the interface between the plasma and the chamber wall, bombarding the inner wall of the reaction chamber to deposit and form a boron film. Boron trioxide, which is low-risk, low-toxicity, and low-cost, is used as a raw material to complete the boronizing coating, enabling the long-term, efficient, low-cost, and safe operation of the nuclear fusion reactor.

The present disclosure describes boron containing pyrimidine compounds, or their pharmaceutically acceptable salts, pharmaceutical compositions containing them, and their medical uses. The compounds of the present disclosure have activity as Janus kinase (JAK) inhibitors and are useful in the in the treatment or control of inflammation, auto-immune diseases, cancer, and other disorders and indications where modulation of JAK would be desirable. Also described are methods of treating inflammation, auto-immune diseases, cancer, and other conditions that are susceptible to the inhibition of a Janus kinase by administering a compound herein described.

The application relates to the technical field of non-ferrous metal material processing, in particular to a high-strength and high-conductivity copper alloy containing boron and a cryogenic deformation heat treatment method thereof. The cryogenic deformation heat treatment method comprises the following steps: vacuum melting and casting and composite purification, homogenization treatment, hot rolling and quenching, three-stage cryogenic plastic deformation treatment, multi-stage cold rolling and grading aging treatment. The application adopts the process of vacuum melting and casting and composite purification, avoids oxidation by adopting vacuum melting and casting, carries out composite purification by combining ultrasonic vibration and electromagnetic stirring, refines melt grains by ultrasonic vibration, promotes FeB phase dispersion precipitation by electromagnetic stirring, and solves the problem of uneven distribution of impurities in traditional melting and casting.

Disclosed herein are highly conductive polymer-boron containing compounds of Formulae I and II and electrolytes and their use for lithium batteries.

A low-carbon boron-containing protective slag for G115 heat-resistant steel large round billet continuous casting, which has the following chemical components by weight percentage: CaO: 29-38%, SiO2: 26-34%, Al2O3: 5-8%, Na2O: 5-8%, NaF: 6-11%, Li2O: 2-4%, MgO <= 2%, Fe2O3 <= 1%, MnO: 3-6%, B4C: 1.8-2.7%, C <= 0.1%, and the balance is inevitable impurities, wherein the particle size of B4C is 45-75 mu m. The present application realizes precise boron supplementation while preventing carbon deposition, thereby meeting the stringent requirements of G115 continuous casting, and producing G115 large-size continuous casting round billet products of phi 600-phi 1200 mm to meet the requirements of CSTM 00017-2021 and Q / OAPD 2753-2022, Q / OAPD 2253-2022 and other standards.

This invention provides a method for preparing a low-boron spheroidizing agent, belonging to the field of spheroidizing agent technology. The method includes the following steps: Step 1: Mixing various raw materials in a certain proportion, wherein the required raw materials include magnesium ingots, metallic calcium, ferrosilicon, scrap steel, rare earth elements, and aluminum, using an automatic batching system; Step 2: Transporting the batched raw materials to a melting furnace via a conveying system for melting; Step 3: During the melting process in the melting furnace, continuously measuring and monitoring the temperature inside the furnace. Using the method described in this application, a low-boron spheroidizing agent with a boron content of less than 40 ppm can be produced.

Methods for forming a layer comprising boron carbon nitride on a substrate by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a boron halide precursor pulse that comprises exposing the substrate to a boron precursor and a carbon-containing precursor pulse that comprises exposing the substrate to a carbon-containing precursor. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

The application belongs to the technical field of organic photoelectric materials, and provides a boron-nitrogen-containing multi-heterocyclic material and an organic electroluminescent device containing the same. The boron-nitrogen-containing multi-heterocyclic material provided by the application is a novel sensitization material and a doping material with a boron-nitrogen six-membered heterocyclic ring as a molecular skeleton center and containing a multi-benzene ring structure. The structure has good stability, can inhibit molecular vibration relaxation and reduce non-radiative transition, and thus a better service life is achieved. Meanwhile, the material has good high-exciton utilization and small ΔEST, can more easily realize intersystem crossing, and achieve better photoelectric conversion efficiency.

This invention discloses a hydrogen purifier capable of adsorbing and removing boron, relating to the technical field of hydrogen purifiers. It includes a base, with an adsorption mechanism, a purification tower, and a dryer fixedly connected to the top of the base. The adsorption mechanism, purification tower, and dryer are connected by a pipeline. One end of the adsorption mechanism is equipped with an axial displacement mechanism. A spherical shell containing adsorbent is disposed within the adsorption mechanism. When boron-containing hydrogen gas flows through the adsorption mechanism, the spherical shells undergo mutual tumbling motion, ensuring full contact between the adsorbent inside the shells and the hydrogen gas, significantly increasing the gas-solid contact area. This overcomes the shortcomings of traditional fixed-bed adsorbents with fixed positions and uneven gas-solid contact. Simultaneously, the dynamic tumbling of the spherical shells allows for a more uniform distribution of hydrogen residence time within the adsorption mechanism, ensuring that the adsorbent at all locations can fully exert its adsorption performance, avoiding premature saturation of local adsorbents, thereby significantly improving the removal efficiency of boron impurities and extending the overall service life of the adsorbent.

This invention discloses a low-cost, high-calorific-value boron-aluminum-based composite fuel and its preparation method. The low-cost, high-calorific-value boron-aluminum-based composite fuel, by mass percentage, consists of 75%–90% Al powder with a particle size of 1–50 μm, 0%–10% D... 50 =1~3μm B powder and 10%~20% D 50 Composed of ultrafine B4C powder with a particle size of ≤5μm. This invention prepares boron-aluminum based composite fuels with specific component ratios by partially or completely replacing amorphous boron powder with ultrafine B4C powder, using ultrasonic dispersion or mechanical ball milling techniques. This achieves high calorific value while effectively controlling raw material costs.

The objective is to provide a method for producing boron-containing diamond films (MPCVD method) that does not use boron-containing gas G1 as a boron-doping element source. [Solution] A method for manufacturing a boron-containing diamond film using the MPCVD method, in which a film-forming gas G0 is supplied from a film-forming gas intake port S0 and exhaust gas G2 is discharged from an exhaust port E to form a boron-containing diamond film on a substrate P0, characterized in that the film-forming gas G0 is supplied from the film-forming gas intake port S0 and a boron-containing quartz component 95 constituting a quartz injection head 90 is used as a boron-doping element source.

Methods for forming boron nitride layer on a surface of a substrate by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods comprise the steps of providing a substrate withing a reaction chamber; and executing at least one deposition cycle. The deposition cycle comprises providing a boron precursor into the reaction chamber, the boron precursor comprising boron halide; and providing a reactive species generated from a plasma produced from a reactant gas into the reaction chamber.

The application particularly relates to a dielectrophoresis precision grading method and device for boron-containing diamond micro-powder. The method comprises the following steps: dispersing the boron-containing diamond micro-powder in a dispersion medium with an electrical conductivity less than 10 ‑3 S / m; passing the dispersed suspension into a dielectrophoresis grading device; applying electrophoretic interference of a shielding surface charge with a frequency of 5-20 MHz in the device, and realizing precision grading according to particle size by dielectrophoretic force. The application adopts a two-stage coupling grading strategy: the first stage of a parallel plate electrode unit realizes pre-selection according to boron content by using Maxwell-Wagner relaxation frequency difference, and the second stage of an inclined electrode array unit realizes precision grading according to particle size, and more than 5 narrow distribution particle grades can be obtained by single operation, the particle size span value of each particle grade is less than or equal to 0.5, and the particle size-boron content two-dimensional grading is realized, the particle size of each collection area after grading is relatively concentrated, the overlapping degree between adjacent particle grades is low, and the needs of precision applications such as super-precision grinding, heat-conducting filler and the like are met.

This invention discloses a rare earth concentrate pretreatment method and its application for improving the recovery rate of rare earth ferrosilicon alloy smelting, belonging to the field of rare earth metallurgy. Addressing the problem of low rare earth recovery rates in silicothermic smelting (traditionally only around 65%), this invention employs a "pre-melting-nucleation" synergistic pretreatment: the rare earth concentrate is mixed with a boron-containing flux and a calcium-containing nucleation inducer, and pre-melted at 1200-1350℃ for 30-60 minutes to destroy stable phases such as bastnaesite and monazite in the original ore, forming amorphous or microcrystalline active precursors; then it is crushed to 5-30 mm and smelted with ferrosilicon and lime using the conventional silicothermic process. This invention improves the activity of rare earth oxides through phase reconstruction, while the nucleation inducer promotes the aggregation and sedimentation of alloy microdroplets. After pretreatment using this invention, the rare earth recovery rate is increased to 85%-92%, an improvement of 15-25 percentage points compared to traditional processes, power consumption is reduced by more than 20%, smelting time is shortened by 30%, and resource utilization is significantly improved.

A method of forming a boron nitride layer on a surface of a substrate by a plasma-enhanced atomic layer deposition (PEALD) process. The method includes the steps of providing the substrate in a reaction chamber; and performing at least one deposition cycle. The deposition cycle includes providing a boron precursor into the reaction chamber, the boron precursor including a boron halide; and providing reactive species generated by a plasma generated from a reactant gas into the reaction chamber.

A substrate processing system according to one aspect of the present invention comprises: a process chamber having a reaction space formed therein; a substrate support unit coupled to the process chamber to support a substrate; and a boron-containing precursor supply device for supplying a boron-containing precursor gas to the reaction space in the process chamber. The boron-containing precursor supply device includes: a canister which is filled with a boron-containing precursor liquid therein and receives a carrier gas to generate the boron-containing precursor gas from the boron-containing precursor liquid contained therein and discharge same; and a gas transfer pipe which is connected between the canister and the process chamber to transfer the boron-containing precursor gas from the canister to the process chamber and is heated to a predetermined temperature to prevent liquefaction of the boron-containing precursor gas.

The application discloses a boron-containing low-crystallinity NiCo2O4 electrode material and a preparation method thereof. First, a nickel source, a cobalt source, ammonium fluoride and urea are mixed and dissolved in deionized water to perform a hydrothermal reaction to obtain a precursor M(OH)2; the M(OH)2 is mixed and ground with boric acid at a certain mass ratio, and the mixture is calcined to obtain the boron-containing low-crystallinity NiCo2O4 electrode material; in the preferred scheme, the prepared electrode has an internal resistance as low as 0.49 Ω, a faster ion diffusion rate and an ultra-low charge transfer resistance; when the current density is 1 A·g ‑1 , the specific capacitance can reach 712.5 F·g ‑1 ; after 8000 charge-discharge cycles, the sample can still maintain 98.4% of the initial capacitance; the application has the advantages of simple operation, low material cost, good supercapacitor performance and good application prospect as a supercapacitor electrode material.

The embodiment of the present application provides a detection method of a detection system and the detection system, the detection method of the detection system comprises the following steps: a processor determines a first relationship between a first transmittance and a first thickness of a boron carbide sample according to a direct beam count, a background count and a first count, and determines a second relationship between the first transmittance and a boron 10 surface density; the processor determines a third relationship between a second transmittance and a second thickness of a second phase sample according to the direct beam count, the background count and a second count; and the processor determines the surface density of boron 10 in a boron-containing alloy according to the direct beam count, the background count, a third count, a third thickness of the boron-containing alloy, the first relationship, the second relationship and the third relationship. The detection method of the detection system can improve the detection precision of the surface density of boron 10.

This invention provides a bifunctional biochar for acidic soils, its preparation method, and its application. The preparation method includes: placing biochar raw material and a boron-containing compound in an acidic solution with a pH of 3.5-4.5, and heating at 120-180°C for 4-12 hours to obtain a solid product. The biochar raw material is a precursor containing tannin-based polyphenols. The solid product is washed, dried, and then placed in an inert gas atmosphere and pyrolyzed at 480-520°C for 1-2 hours to obtain the bifunctional biochar for acidic soils. The biochar in this application can simultaneously address the problems of active aluminum toxicity and available boron deficiency in acidic soils.

A method is provided for forming a layer comprising boron carbonitride on a substrate using a plasma-enhanced atomic layer deposition (PEALD) process. The method includes performing multiple deposition cycles. Each deposition cycle includes a boron halide precursor pulse and a carbon-containing precursor pulse, wherein the boron halide precursor pulse exposes the substrate to a boron precursor, and the carbon-containing precursor pulse exposes the substrate to a carbon-containing precursor. The deposition cycle also includes a plasma pulse, which exposes the substrate to a plasma treatment. The plasma treatment includes generating plasma.

The present application relates to the technical field of the production of sanitary ceramics, and particularly relates to a low-temperature sanitary ceramic green body and a preparation method therefor, and a low-temperature sanitary ceramic. The green body comprises the following raw materials in percentages by mass: 10-20% of ball clay, 10-25% of high-alumina porcelain stone, 5-15% of spodumene tailings or microcline, 25-45% of porcelain clay, 0-10% of potassium feldspar, 5-20% of tremolite, and 5-20% of boron-containing waste glass. Problems in controlling the regularity of mass-produced products are overcome by introducing natural microfibrous / nanofibrous tremolite to replace a calcium- and magnesium-containing raw material, i.e., dolomite, performing low-temperature sintering to form a system comprising multiple mineral phases such as sodium / calcium feldspar, using a key technique capable of achieving steady-state control over the deformation rate during sintering, and broadening the sintering range of a low-temperature sintering green body. Moreover, a low-temperature sintering ceramic slurry is endowed with better forming performance, thereby improving the tensile strength of both wet and dried green bodies, solving quality problems such as susceptibility to cracking during the forming and firing processes of a green body caused by poor suspension properties of a slurry, and meeting the process requirements of mass production.

This invention provides a silicon wafer, its preparation method, and its applications. The silicon wafer of this invention includes a boron-containing layer and a phosphorus-containing layer. The boron-containing layer extends from the outer surface of the silicon wafer to its center, and the spatial distribution of the boron-containing layer and the phosphorus-containing layer within the silicon wafer does not overlap. In the boron-containing layer, the concentration of boron gradually decreases from the outer surface of the silicon wafer to its center. In the phosphorus-containing layer, phosphorus is uniformly distributed. The silicon wafer of this invention can possess both excellent surface conductivity and a long bulk minority carrier lifetime.