4 results about "Integrated circuit fabrication" patented technology

This invention discloses a frequency converter circuit structure and its fabrication method for a double-sided integrated Schottky diode, relating to the field of terahertz high-frequency devices and integrated circuit fabrication technology. The structure includes a first Schottky die, a second Schottky die, and a suspended microstrip metal circuit layer. Both dies have a front side that forms a Schottky junction. The first Schottky die is positioned with the suspended microstrip metal circuit layer attached to its first back side, and the second Schottky die is positioned with the suspended microstrip metal circuit layer attached to its second back side. The two dies are mirror-symmetrical about the suspended microstrip metal circuit layer. This allows for a "back-to-back" stacking of the two Schottky dies through three-dimensional integration, increasing the number of Schottky junctions without significantly increasing the two-dimensional area of ​​the circuit. This effectively improves the power handling capability and integration density of the frequency converter circuit, while optimizing energy coupling efficiency, making it particularly suitable for high-power frequency doubling sources in the terahertz band.

The application discloses a kind of hydrogen bond induced self-assembly and the layered homopolymer supramolecule with feature size below 5nm and preparation method thereof.The prepared homopolymer supramolecule is based on polyvinylimidazole, is constructed by hydrogen bond interaction with long alkyl chain carboxylic acid / alcohol (as hydrogen bond donor), and is simply synthesized by using hot pouring process.The material can complete efficient self-assembly simultaneously in the hot pouring process, and obtain low-layered nanometer pattern below 5nm.The application realizes microphase separation by hydrogen bond induced self-assembly, and the feature size of pattern can be accurately controlled by changing the length of alkane side chain, to provide a convenient and efficient new strategy for super-high resolution patterning material used in integrated circuit manufacturing field.

Embodiments relate to a three-dimensional integrated circuit (3D IC) fabrication process involving wafer-to-wafer bonding of a first wafer to a second wafer. The process includes partially cutting trenches in the second wafer's streets, aligning interconnects between the two wafers, and coupling them to form a wafer stack. The second wafer is then thinned to expose the partially cut trenches, and materials between the second wafer's dies are removed to expose die pads on the first wafer for external connection, enabling the creation of a 3D IC with improved connectivity and functionality.