485 results about "Thermal oxidation" patented technology

A method of manufacturing a semiconductor device includes: preparing semiconductor substrate having a front surface and a back surface opposite to each other, the semiconductor substrate being of a first conductivity type; forming a device structure in the semiconductor substrate, at the front surface; performing thermal oxidation to form a gate insulating film and depositing a polysilicon to form a plurality of gate electrodes; removing the polysilicon at the back surface of the semiconductor substrate while leaving an oxide film formed at the back surface and a side surface of the semiconductor substrate by the thermal oxidation; forming a surface electrode on the device structure; and forming a plating film on the surface electrode while continuing to leave the oxide film at the back surface and the side surface of the semiconductor substrate.

The invention provides a preparation method of a gate oxide layer and a gate, and the method comprises the steps: carrying out the rapid thermal annealing treatment of a silicon-based substrate in a nitrogen-containing gas atmosphere, which belongs to a non-destructive nitrogen doping mode, and carrying out the nitrogen pre-doping on the surface of the silicon-based substrate, so as to reduce the doping amount needed by the subsequent plasma nitrogen doping; therefore, the damage of the plasma nitrogen doping process to the SiON gate oxide layer is reduced, and the interface defect between the SiON gate oxide layer and the silicon-based substrate interface is reduced. Besides, after the nitrogen pre-doped layer is formed, the thermal oxidation process is carried out on the silicon-based substrate to form the silicon dioxide gate oxide layer, so that the damage to the SiON gate oxide layer film is reduced, and the interface defect between the SiON gate oxide layer and the silicon-based substrate interface is further reduced; moreover, the laser rapid annealing treatment can remove the intrinsic oxide layer on the surface of the SiON gate oxide layer, repair the damage to the crystal lattice of the SiON gate oxide layer caused by the plasma nitrogen doping treatment process, improve the film quality and repair the interface.

The invention discloses a preparation method of a nano silicon dioxide modified high-density polyethylene wear-resistant plate, and belongs to the technical field of polyethylene plates, the method comprises the following steps: firstly preparing an antioxidant PMMA microcapsule, then preparing titanium dioxide and silicon dioxide, and modifying by KH550 to obtain modified nano titanium-silicon composite particles; then, an antioxidant coated PMMA microcapsule, the modified nano titanium-silicon composite particles, POE-g-MAH and HDPE particles are premixed, and the wear-resistant plate is obtained through twin-screw extrusion granulation and pulsating force field assisted molding; through the synergistic effect of the antioxidant coated PMMA microcapsule, the modified nano titanium-silicon composite particles and the compatilizer POE-g-MAH, the problems that the wear resistance of the HDPE plate is insufficient and the antioxidant is easily adsorbed by nano silicon dioxide to cause aging resistance attenuation are solved, and the wear resistance, thermal oxidation / light aging resistance and mechanical property improvement of the plate are realized; and the requirements of high-frequency wear scenes such as mine conveying and outdoor engineering can be met.

A regenerative thermal oxidizer assembly includes a first housing member and a second housing member. The first housing member defines a regenerative portion and a combustion chamber. The second housing member defines an inlet chamber and an outlet chamber. A regenerator is disposed within the regenerative portion of the first housing member. A thermal element extends through the first housing member into the combustion chamber for providing heat to the combustion chamber for initiating combustion inside the combustion chamber. The first housing member is rotatable around a central axis relative to the second housing member for rotating the regenerator relative to the inlet chamber and the outlet chamber.

The invention discloses an integrated treatment method and system suitable for multi-component industrial waste gas, and relates to the technical field of industrial waste gas treatment, and the method comprises the steps of S1, waste gas pretreatment, S2, pre-oxidation and sulfur fixation, S3, thermal oxidation, S4, non-quenching temperature self-adaptive adjustment, S5, selective catalytic reduction denitration, S6, emission and monitoring, and S7, intelligent dynamic system control. The gradient temperature field of the heat storage ceramic body is used for providing accurate and stable air inlet temperature for the SCR reaction, an independent quenching device is omitted, and therefore the comprehensive energy consumption and the operation cost of the system are greatly reduced, and by additionally arranging the pre-oxidation layer and adopting the dual-function SCR catalyst, the heat storage effect of the system is greatly improved. The system effectively realizes advanced fixation of organic sulfur and efficient removal of nitrogen oxides, dynamically adjusts the ammonia injection amount and combustion intensity, ensures that the system can still maintain extremely high treatment efficiency and stability under flow fluctuation and complex working conditions, reduces ammonia escape to the greatest extent, and is convenient to use.

The invention provides an MOS device and a manufacturing method thereof, and the method comprises the steps: forming a basic oxide layer on the surface of a semiconductor substrate through a rapid thermal oxidation method, introducing nitrogen into the basic oxide layer until the average nitrogen concentration reaches a preset value, and enabling the part with the maximum nitrogen ion concentration to be far away from the interface distribution of the basic oxide layer / semiconductor substrate, and then carrying out annealing treatment after nitriding and manufacturing the PMOS transistor, wherein a gate dielectric layer of the PMOS transistor adopts the basic oxide layer after nitrogen introduction. According to the invention, the basic oxide layer is formed by adopting a rapid thermal oxidation method, so that the introduction of hydrogen can be reduced, the maximum concentration of nitrogen ions is distributed far away from the interface, so that the influence on Si-H bonds can be reduced, the interface defects are reduced, and the NBTI service life is prolonged. According to the invention, the stress proximity technology can be further introduced to improve the performance of the NMOS, the buffer layer is utilized to block the damage of plasma to the gate dielectric layer in the forming process of the silicon nitride tensile stress layer, the quality of the gate dielectric layer is improved, and the reliability of the device is further improved.

The invention discloses a wafer-level fusion bonding method and a preparation method of an MEMS device, and the method comprises the steps: providing a first silicon wafer which is provided with a front surface and a back surface which are opposite to each other; forming a groove in the front surface of the first silicon wafer and forming a chamfer at the corner of the top edge of the groove; forming a silicon oxide dielectric layer on the front surface of the first silicon wafer in a thermal oxidation growth mode, wherein the silicon oxide dielectric layer covers the bottom of the groove, the side wall of the groove and the front surface of the first silicon wafer outside the range of the groove; providing a second silicon wafer, wherein the second silicon wafer is provided with a front surface and a back surface which are opposite; and bonding the front surface of the second silicon wafer with the silicon oxide dielectric layer on the front surface of the first silicon wafer. According to the invention, the problem of bonding failure caused by rising of the edge of the groove after thermal oxidation growth can be solved.

The invention discloses a manufacturing method of a trench gate semiconductor power device. The manufacturing method comprises the following steps: forming a first hard mask layer on a first epitaxial layer; and performing graphical etching on the first hard mask layer to open the forming region of the gate trench. And etching the first epitaxial layer to form a gate trench. And after the first hard mask layer is removed, performing a first thermal oxidation process to form a first field oxide layer on the inner side surface of the gate trench and the outer surface of the gate trench. And performing a first CVD growth process to form a second field oxide layer, and overlapping the first field oxide layer and the second field oxide layer to form a third field oxide layer. And performing a first CMP process to remove the third field oxide layer outside the gate trench. And forming a first polycrystalline silicon layer to completely fill the gate trench and extend out of the gate trench. And performing a second CMP process to flatten the first polycrystalline silicon layer. The structure consistency of the gate trench region and the platform region can be improved at the same time, and the performance and the yield of the device can be comprehensively improved.

The invention provides an anti-overheating expansion welding method for a tube plate and a heat exchange tube and a tube plate heat exchanger, and relates to the technical field of heat exchanger manufacturing, the method comprises the following steps: planning a welding sequence according to a plurality of to-be-welded tube plate joints on the tube plate, and enabling the continuous tube plate joints on the welding sequence to be non-adjacent in spatial positions; welding is conducted according to the welding sequence, and meanwhile a heat conduction tool is used for making contact with the tube plate connector to conduct heat away; after welding of the preset number of tube plate joints is completed every time, the weld joint temperature is detected and compared with a preset temperature threshold value, and if the weld joint temperature is smaller than or equal to the preset temperature threshold value, welding of the next set of tube plate joints continues; and if the weld joint temperature is larger than the preset temperature threshold value, welding is suspended, and cooling is conducted till the weld joint temperature falls back to be lower than or equal to the preset temperature threshold value. Through a collaborative mechanism of path dispersion, active heat conduction and closed-loop temperature control, the problems of welding seam overheating oxidation, structure deterioration and poor process stability caused by heat conduction difference of dissimilar metals and heat accumulation of batch welding are solved.

A method of manufacturing a device package. The method comprises patterning a first substrate to form patterned regions comprising a thermal oxide layer. The method further comprises directly bonding the patterned regions of the first substrate to a second substrate to form a bonding interface. The bonded first and second substrates form an integrated cooling assembly comprising a coolant chamber volume. Portions of the first substrate exposed to the coolant chamber volume comprise a native oxide layer.

The invention discloses an RTO heat accumulating type incinerator, which relates to the technical field of waste gas treatment and comprises an incinerator body, an air duct, three heat accumulators and a combustion device, a heat preservation layer is arranged on the inner side of the furnace body, and a combustion chamber, three heat storage chambers and three gas collection chambers are arranged in the furnace body. An explosion venting opening is formed in the top of the furnace body; the corresponding heat storage chambers are filled with the heat storage bodies, and the furnace body is provided with a filtering device. The combustion device is arranged on one side of the furnace body; the air duct comprises a waste gas pipeline; the waste gas pipeline comprises a gas inlet pipe, a gas outlet pipe and three ventilation pipes; the top of the breather pipe is communicated with the bottom of the gas collection chamber; the two ends of the breather pipe are connected and communicated with the air inlet pipe and the air outlet pipe respectively, and butterfly valves are arranged at the two ends of the breather pipe. The use cost and the maintenance difficulty can be effectively reduced while the waste gas treatment efficiency and the effect stability are guaranteed.

The invention relates to the technical field of energy storage safety, and particularly discloses wide-temperature-range flame-retardant cooling liquid, a preparation method of the wide-temperature-range flame-retardant cooling liquid, an immersed energy storage device, a data center and electric equipment.The wide-temperature-range flame-retardant cooling liquid is introduced into the flame-retardant cooling liquid, the modifier can improve the wide-temperature-range performance of the flame-retardant cooling liquid, and the flame-retardant performance of the flame-retardant cooling liquid is improved; good applicability in extremely cold and high-temperature environments is ensured; the modifier has good breakdown resistance and thermal oxidation stability, so that the insulating property and oxidation resistance of the flame-retardant cooling liquid can be further improved; in addition, the modifier contains phosphorus element which can play a synergistic flame-retardant role with flame-retardant elements in the flame retardant, so that the flame-retardant property of the flame-retardant cooling liquid is further enhanced; meanwhile, the modifier also has good compatibility with other components in the flame-retardant cooling liquid, so that the cooling liquid can be uniformly dispersed, and the problem that the insulating property, the flame-retardant property and the wide temperature range property become poor due to system layering caused by poor compatibility is avoided.

The present application belongs to the field of coal mine safety and coal gas utilization, and discloses a gas mixing control system for preventing freezing of a gas heat accumulation and oxidation shaft, which comprises a mixing device, a gas flow regulating valve, a mixed gas concentration measuring sensor and a controller. The mixed gas concentration measuring sensor is provided as at least two, and the control concentration value used by the controller is obtained by taking the arithmetic mean of the measured values of each mixed gas concentration measuring sensor. The control system uses the concentration difference between the upper and lower limits of the mixed gas concentration as a buffer zone, and continuously adjusts the opening of the low-concentration gas flow regulating valve at a certain frequency based on the mixed gas concentration monitoring value within a set time period, so that the mixed gas concentration is smoothly adjusted to the set operating target value. The present application also relates to a gas mixing control method.

The invention provides a TBC battery preparation method and a TBC battery, and relates to the technical field of solar cells, and the TBC battery preparation method comprises the following steps: sequentially preparing a first tunneling oxide layer and a first polycrystalline silicon layer on the back surface of a silicon substrate, preparing a mask layer in a preset positive electrode region of the first polycrystalline silicon layer, and preparing a second tunneling oxide layer in a preset negative electrode region of the first polycrystalline silicon layer; then removing the first tunneling oxide layer and the first polycrystalline silicon layer which are plated in a preset negative electrode region on the back surface of the silicon substrate and on the front surface of the silicon substrate in a winding manner; then, a second tunneling oxide layer and a second polycrystalline silicon layer are sequentially prepared in a preset negative electrode area on the back face of the silicon substrate, a mask layer is prepared in a preset negative electrode area of the second polycrystalline silicon layer, and then a preset positive electrode area on the back face of the silicon substrate and the second tunneling oxide layer and the second polycrystalline silicon layer which are plated on the front face of the silicon substrate in a winding mode are removed; and then removing the mask layer on the back surface of the silicon substrate. According to the method, the mask layer is formed by adopting the laser thermal oxidation method, and the wound and plated polycrystalline silicon layer is removed separately, so that the electric leakage proportion can be reduced, and the battery yield can be improved.

The application discloses a preparation method of FE-DSOI wafers and FE-DSOI devices, and the method comprises the following steps: providing a plurality of original wafers; preparing a bottom wafer by using the original wafers; depositing ferroelectric material on the surface of the bottom wafer to obtain a bottom wafer containing ferroelectric material; performing thermal oxidation treatment on the original wafers to obtain a top wafer; and performing bonding and layer transfer treatment on the top wafer and the bottom wafer containing ferroelectric material, so as to obtain FE-DSOI wafers containing ferroelectric material and double buried oxide silicon. By using the application, the technical problems that the conventional DSOI does not have back gate regulation capability and cannot inhibit threshold voltage drift when no back gate voltage is continuously applied in the prior art can be solved.

The invention provides a manufacturing method of a flash memory, which comprises the following steps: back-etching a word line material layer, the top surface of the word line material layer being higher than the top surface of a second side wall and lower than the top surface of a first side wall; executing a rapid thermal oxidation process, and oxidizing the top of the word line material layer to form a first oxide layer, so that the top surface of the word line material layer is not higher than the top surface of the second side wall; and forming a second oxide layer, wherein the second oxide layer covers the first oxide layer. The rapid thermal oxidation process is added after word line back etching to form the compact first oxide layer, and the rapid thermal oxidation process is high in temperature, rapid in temperature rise and short in time, so that word line polycrystalline silicon stretching across the second side wall can be consumed; and the problem that word line crystal grains cannot be fully oxidized due to long time for growing the oxide layer by a furnace tube thermal oxidation process can be avoided, and the problem that a very thick first oxide layer cannot be grown due to short time of a rapid thermal oxidation process can be solved by subsequently backfilling the second oxide layer, so that a process window for word line oxidation and word line etching is enlarged.

A regenerative thermal oxidizer (RTOx) can destroy fluorinated compounds in a feed gas. The RTOx includes a combustion chamber, a burner, and a heat recovery packing bed. The burner is coupled to the combustion chamber. The burner is configured to receive the feed gas, a fuel gas, and an oxidizing gas. The fuel gas includes methane. The oxidizing gas includes oxygen. The burner is configured to combust the feed gas and the fuel gas in the presence of the oxidizing gas to produce heat an exhaust gas that includes a fluoride-containing byproduct. The heat recovery packing bed is disposed within the combustion chamber. The heat recovery packing bed is made of a ceramic material that includes aluminum oxide that is configured to absorb at least a portion of the heat produced by the combustion of the feed gas and the fuel gas.

The application provides a semiconductor structure and a preparation method thereof. The preparation method of the semiconductor structure comprises the following steps: providing a substrate, a surface of the substrate is formed with an epitaxial layer, and a groove is formed on a side of the epitaxial layer away from the substrate; a first gate oxide layer is formed through a thermal oxidation process, the first gate oxide layer covers at least a sidewall of the groove; a second gate oxide layer is formed through a chemical vapor deposition process, the second gate oxide layer fills a bottom of the groove and covers a surface of the first gate oxide layer away from the epitaxial layer, the first gate oxide layer and the second gate oxide layer jointly form a gate oxide structure, and a thickness of the gate oxide structure at the bottom of the groove is greater than or equal to a thickness of the gate oxide structure on the sidewall of the groove. The preparation method of the semiconductor structure is beneficial to improving the breakdown voltage and the gate oxide reliability of a semiconductor device.

This invention relates to the technical field of pipe performance testing equipment, and discloses a thermo-oxidative aging testing device for polyethylene pipes under the action of high-sulfur gas field water. The device includes a testing machine and a docking mechanism located inside the testing machine. This docking mechanism seals and fixes both ends of the pipe under test and forms a passage for the circulation of corrosive media. A replacement mechanism, also located inside the testing machine, includes a base plate and a sand storage chamber on the base plate. The sand storage chamber is used to lay sand and gravel. A pressure mechanism is located at the top of the testing machine. A liquid storage tank and a centrifugal pump are connected to the outside of the docking mechanism for circulating high-sulfur gas field water into the pipe under test. By subjecting the inner wall of the pipe to corrosive liquid erosion and the outer wall to thermo-oxidative aging, the device simulates the pipe's usage under combined corrosion and aging conditions, making the test results more consistent with actual engineering applications.

The invention discloses a manufacturing method for improving the reliability quality of a p-type trench MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), and belongs to the field of semiconductor power devices. On the basis of a p-type trench MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) process, the total dose resistance characteristic of the device is ensured through preposition of a junction pushing thermal process, and the single event burnout resistance of the device is improved through thermal oxidation thickening at the bottom of a trench. Meanwhile, after the bottom thermal oxidation thickening process is manufactured for the p-type anti-radiation trench MOSFET, the p-type concentration of silicon at the bottom of the trench is adjusted through p-type ion implantation, the problem that a device cannot be opened due to trench breaking is solved, the reliability quality of the p-type trench MOSFET is effectively improved, and the device meets the performance requirement for high reliability in the aerospace field.

The present application relates to the technical field of silicon wafer production, and discloses a cleaning and drying method and system for silicon wafers, which comprises the following steps: pre-cleaning silicon wafers after being cut; loading the pre-cleaned silicon wafers into a silicon wafer basket; immersing the silicon wafer basket into a cleaning tank to perform main cleaning on the silicon wafers; sending the silicon wafer basket after the main cleaning into a closed drying cavity, measuring the in-situ wetting angle of the contact area between the edge of the silicon wafer and the clamping tooth of the silicon wafer basket by using an optical wetting angle measuring instrument in the closed drying cavity; matching the value of the in-situ wetting angle obtained by detection with a plurality of preset wetting angle intervals, and controlling the infrared radiation array to irradiate and dry the silicon wafer basket according to the drying strategy corresponding to the matched wetting angle interval; sampling the dried silicon wafers, performing the same texturing and thermal oxidation treatment on the sampled silicon wafers, and detecting whether the treated silicon wafers are abnormal; and grading the silicon wafer batches without abnormalities into the warehouse. The method can improve the production yield of silicon wafers.

The present application discloses a semiconductor device and a method for making the same. The semiconductor device includes a substrate, a word line, a word line dielectric layer, and first and second source / drain regions. The word line is buried in the substrate. The word line dielectric layer is disposed between the substrate and the word line, and the word line dielectric layer includes: a first oxide layer and a second oxide layer. The first oxide layer is in contact with the word line and is formed by an atomic layer deposition (ALD) process. The second oxide layer is in contact with the substrate and is formed by a thermal oxidation process. The first and the second source / drain regions are disposed in the substrate and above the word line, wherein the word line is disposed laterally between the first and the second source / drain regions.

The invention discloses oxide dispersion strengthened metal powder for 3D printing and a preparation method of the oxide dispersion strengthened metal powder. The preparation method comprises the following steps that S1, the smelting process is conducted, specifically, a metal ingot is put into a vacuum smelting furnace or a feeding system integrated with powder manufacturing equipment, vacuumizing and high-temperature melting are conducted to be in a molten state, and a melt is obtained; s2, the atomization process is conducted, specifically, the melt is put into powder manufacturing equipment, small metal liquid drops are generated in a reaction chamber through the melt, fine spherical metal powder is formed, and the fine spherical metal powder with the needed particle size is collected through screening under the protective atmosphere; wherein oxygen is doped in the smelting process and / or the atomization process. The oxide particles can be dispersed inside and outside the metal powder, the problem that oxide can only be added on the surface through thermal oxidation and mechanical grinding is solved, meanwhile, the laser absorptivity is improved, and the 3D printing performance of the metal powder is improved.

A method of manufacturing a semiconductor device according to an embodiment includes a first film formation step, a second film formation step, and an oxidation step. In the first film formation step, a first coating formed of silicon is formed on the surface of a substrate formed of silicon carbide. In the second film formation step, a second coating film is formed on the surface of the first coating film. In the oxidation step, the first coating film is thermally oxidized from the surface side to form a third coating film. In the second film formation step, the second film is not formed on a portion of the first film and the portion is exposed. Alternatively, in the second film formation step, the film thickness of the second film formed on a part of the first film is smaller than the film thickness of the second film formed on the other part.

A method of manufacturing a device package. The method comprises patterning a first substrate to form patterned regions comprising a thermal oxide layer. The method further comprises directly bonding the patterned regions of the first substrate to a second substrate to form a bonding interface. The bonded first and second substrates form an integrated cooling assembly comprising a coolant chamber volume. Portions of the first substrate exposed to the coolant chamber volume comprise a native oxide layer.

A preparation method of an oxygen solute gradient amorphous high-entropy alloy oxidation coating comprises the following steps that after a high-entropy alloy coating is deposited on the surface of a base body in a magnetron sputtering mode, the high-entropy alloy coating is cooled to the room temperature; and putting the substrate containing the high-entropy alloy coating into an oxidizing furnace, carrying out thermal oxidation in an air atmosphere, and cooling to room temperature along with the furnace to obtain the AlCrYTiZrO high-entropy oxidation coating. In the invention, the AlCrYTiZrO high-entropy oxidation coating can generate excellent corrosion resistance through characteristic complementation of a single element, a multi-element synergistic effect and a unique cocktail effect of high entropy due to a large number of components, large mixed entropy, low Gibbs free energy and a stable system; thermal oxidation is carried out under the air atmosphere, small-radius oxygen atoms can be introduced into the coating, the atomic size mismatching degree is increased, an amorphous structure with the oxygen solute gradient is formed, the corrosion resistance is further improved, meanwhile, AlCrYTiZr alloy elements and matrix elements are mutually diffused at the interface of the coating and a matrix, a diffusion layer is formed, and the corrosion resistance of the coating is improved. And the binding force between the coating and the substrate can be enhanced.

The application discloses a kind of medical titanium alloy material surface antibacterial functionalization processing methods, first by hydrothermal oxidation and high-temperature sintering processing in titanium alloy material surface construction TiO2 Nanometer sheet, then deposit W 18 O 49 Quantum dots are deposited on the TiO2 Nanometer sheet, and TiO2 / W 18 O 49 Heterojunction is constructed on the surface of titanium alloy.TiO2 / W 18 O 49 Heterojunction can efficiently catalyze the production of reactive oxygen species (ROS) under near-infrared light irradiation, achieving antibacterial function. The TiO2 / W 18 O 49 Heterojunction functionalized titanium alloy material surface, the irregular sheet structure of TiO2 Nanometer sheet can greatly increase the contact area of the material surface and the surrounding solution, and the W 18 O 49 Quantum dots have the characteristics of "single-atom-like catalysis", which can improve the ROS yield and further endow the medical titanium alloy surface with strong photodynamic antibacterial performance.

This utility model discloses an energy-saving regenerative thermal oxidation device, relating to the field of oxidation device technology, including a regenerative thermal oxidation device body and a liquid extraction assembly; the regenerative thermal oxidation device body: an air inlet box is provided on the right side, an air outlet pipe is fixed inside the air outlet on the left side of the air inlet box, the air outlet pipe is connected to an air inlet ring provided on the right side of the regenerative thermal oxidation device body, an air inlet pipe is fixed inside the air inlet on the right side of the air inlet box, a filter screen is fixed inside the air inlet pipe, a heat insulation frame is fixed at the lower end of the surface of the regenerative thermal oxidation device body, a heat insulation box is fixed on the upper side of the heat insulation frame, and a heat conduction component is installed inside the heat insulation box to facilitate the recovery of excess heat during the use of the regenerative thermal oxidation device body, while preventing large particles of residue from entering the interior of the regenerative thermal oxidation device body.

The application patent relates to the technical field of integrated circuit technology, and particularly relates to a manufacturing method of a full-gate device with four ports. The manufacturing method comprises the following steps: S1, epitaxial growth: firstly, N-epitaxial layer and P+ epitaxial layer, intrinsic silicon layer are grown on N+ substrate in sequence through epitaxial growth technology; S2, etching: the N-epitaxial layer, P+ epitaxial layer and intrinsic silicon layer are etched to remove the excess part; S3, thermal oxidation: the etched part is grown with SiO2 layer through thermal oxidation process; S4, ion implantation: N- region is doped to form N-source region through ion implantation process on the intrinsic silicon layer, and N+ region is doped to form N+ source region on the N-source region; S5, re-etching: etching is performed on the region of SiO2 layer to obtain a ring-shaped groove, a rectangular groove and a cylindrical groove; S6, metal deposition: metal is deposited in the ring-shaped groove, the rectangular groove and the cylindrical groove. The method can enhance the anti-TID effect of the device, and different potentials can be applied to the source and the substrate according to the actual circuit condition.

The invention discloses a grading heat exchange and oxygen control oxidation process method based on a thermal oxidation furnace system, and belongs to the field of waste gas purification treatment. The system comprises a furnace body, a heat accumulator and a combustion chamber, and high-temperature purified gas at an outlet of the combustion chamber can be dynamically distributed through a switching air valve. The heat exchange branch is connected with the built-in heat exchanger, and an outlet of the heat exchange branch can eject and flow back part of flue gas subjected to heat exchange to the oxidizing chamber through the ejector for accurate oxygen supplementation. The system is further provided with a sensor group and a controller. The technological method is executed by a controller, the current working condition is judged according to predefined conditions by receiving oxygen content, temperature, flow and concentration signals in real time, a corresponding control mode is automatically switched, and the heat exchange amount and the backflow oxygen supplementation amount of the built-in heat exchanger are cooperatively controlled by adjusting the opening degree of a switching air valve. The problems that traditional RTO waste heat recovery efficiency is low, operation control is extensive, and oxygen content control is inaccurate are solved, and efficient heat exchange, safe low-nitrogen combustion and working condition self-adaptive operation are achieved.