71 results about "Thermal oxidation" patented technology

The present application belongs to the field of coal mine safety and coal gas utilization, and discloses a gas mixing control system for preventing freezing of a gas heat accumulation and oxidation shaft, which comprises a mixing device, a gas flow regulating valve, a mixed gas concentration measuring sensor and a controller. The mixed gas concentration measuring sensor is provided as at least two, and the control concentration value used by the controller is obtained by taking the arithmetic mean of the measured values of each mixed gas concentration measuring sensor. The control system uses the concentration difference between the upper and lower limits of the mixed gas concentration as a buffer zone, and continuously adjusts the opening of the low-concentration gas flow regulating valve at a certain frequency based on the mixed gas concentration monitoring value within a set time period, so that the mixed gas concentration is smoothly adjusted to the set operating target value. The present application also relates to a gas mixing control method.

The application discloses a preparation method of FE-DSOI wafers and FE-DSOI devices, and the method comprises the following steps: providing a plurality of original wafers; preparing a bottom wafer by using the original wafers; depositing ferroelectric material on the surface of the bottom wafer to obtain a bottom wafer containing ferroelectric material; performing thermal oxidation treatment on the original wafers to obtain a top wafer; and performing bonding and layer transfer treatment on the top wafer and the bottom wafer containing ferroelectric material, so as to obtain FE-DSOI wafers containing ferroelectric material and double buried oxide silicon. By using the application, the technical problems that the conventional DSOI does not have back gate regulation capability and cannot inhibit threshold voltage drift when no back gate voltage is continuously applied in the prior art can be solved.

The application provides a semiconductor structure and a preparation method thereof. The preparation method of the semiconductor structure comprises the following steps: providing a substrate, a surface of the substrate is formed with an epitaxial layer, and a groove is formed on a side of the epitaxial layer away from the substrate; a first gate oxide layer is formed through a thermal oxidation process, the first gate oxide layer covers at least a sidewall of the groove; a second gate oxide layer is formed through a chemical vapor deposition process, the second gate oxide layer fills a bottom of the groove and covers a surface of the first gate oxide layer away from the epitaxial layer, the first gate oxide layer and the second gate oxide layer jointly form a gate oxide structure, and a thickness of the gate oxide structure at the bottom of the groove is greater than or equal to a thickness of the gate oxide structure on the sidewall of the groove. The preparation method of the semiconductor structure is beneficial to improving the breakdown voltage and the gate oxide reliability of a semiconductor device.

This invention relates to the technical field of pipe performance testing equipment, and discloses a thermo-oxidative aging testing device for polyethylene pipes under the action of high-sulfur gas field water. The device includes a testing machine and a docking mechanism located inside the testing machine. This docking mechanism seals and fixes both ends of the pipe under test and forms a passage for the circulation of corrosive media. A replacement mechanism, also located inside the testing machine, includes a base plate and a sand storage chamber on the base plate. The sand storage chamber is used to lay sand and gravel. A pressure mechanism is located at the top of the testing machine. A liquid storage tank and a centrifugal pump are connected to the outside of the docking mechanism for circulating high-sulfur gas field water into the pipe under test. By subjecting the inner wall of the pipe to corrosive liquid erosion and the outer wall to thermo-oxidative aging, the device simulates the pipe's usage under combined corrosion and aging conditions, making the test results more consistent with actual engineering applications.

The present application relates to the technical field of silicon wafer production, and discloses a cleaning and drying method and system for silicon wafers, which comprises the following steps: pre-cleaning silicon wafers after being cut; loading the pre-cleaned silicon wafers into a silicon wafer basket; immersing the silicon wafer basket into a cleaning tank to perform main cleaning on the silicon wafers; sending the silicon wafer basket after the main cleaning into a closed drying cavity, measuring the in-situ wetting angle of the contact area between the edge of the silicon wafer and the clamping tooth of the silicon wafer basket by using an optical wetting angle measuring instrument in the closed drying cavity; matching the value of the in-situ wetting angle obtained by detection with a plurality of preset wetting angle intervals, and controlling the infrared radiation array to irradiate and dry the silicon wafer basket according to the drying strategy corresponding to the matched wetting angle interval; sampling the dried silicon wafers, performing the same texturing and thermal oxidation treatment on the sampled silicon wafers, and detecting whether the treated silicon wafers are abnormal; and grading the silicon wafer batches without abnormalities into the warehouse. The method can improve the production yield of silicon wafers.

The application discloses a kind of medical titanium alloy material surface antibacterial functionalization processing methods, first by hydrothermal oxidation and high-temperature sintering processing in titanium alloy material surface construction TiO2 Nanometer sheet, then deposit W 18 O 49 Quantum dots are deposited on the TiO2 Nanometer sheet, and TiO2 / W 18 O 49 Heterojunction is constructed on the surface of titanium alloy.TiO2 / W 18 O 49 Heterojunction can efficiently catalyze the production of reactive oxygen species (ROS) under near-infrared light irradiation, achieving antibacterial function. The TiO2 / W 18 O 49 Heterojunction functionalized titanium alloy material surface, the irregular sheet structure of TiO2 Nanometer sheet can greatly increase the contact area of the material surface and the surrounding solution, and the W 18 O 49 Quantum dots have the characteristics of "single-atom-like catalysis", which can improve the ROS yield and further endow the medical titanium alloy surface with strong photodynamic antibacterial performance.

This utility model discloses an energy-saving regenerative thermal oxidation device, relating to the field of oxidation device technology, including a regenerative thermal oxidation device body and a liquid extraction assembly; the regenerative thermal oxidation device body: an air inlet box is provided on the right side, an air outlet pipe is fixed inside the air outlet on the left side of the air inlet box, the air outlet pipe is connected to an air inlet ring provided on the right side of the regenerative thermal oxidation device body, an air inlet pipe is fixed inside the air inlet on the right side of the air inlet box, a filter screen is fixed inside the air inlet pipe, a heat insulation frame is fixed at the lower end of the surface of the regenerative thermal oxidation device body, a heat insulation box is fixed on the upper side of the heat insulation frame, and a heat conduction component is installed inside the heat insulation box to facilitate the recovery of excess heat during the use of the regenerative thermal oxidation device body, while preventing large particles of residue from entering the interior of the regenerative thermal oxidation device body.

A method for synthesizing methanol and a synthesis gas flow include supplying hydrogen and carbon oxides to a methanol reactor assembly. A residual gas flow with unreacted hydrogen and unreacted carbon oxides is obtained from the methanol reactor assembly, and the residual gas flow is supplied to a hydrogen separation assembly to obtain a hydrogen-containing flow, which is supplied to the methanol reactor assembly and has a higher molar proportion of hydrogen than the residual gas flow. A purge gas flow having methane is obtained from the hydrogen separation assembly. The purge gas flow is supplied to a recovery assembly for recovering a recovery flow having carbon dioxide and hydrogen, the recovery assembly has a recovery reactor for partly converting the methane of the purge gas flow into carbon oxides and hydrogen using a partial thermal oxidation, and the recovery flow is supplied to the methanol reactor assembly.

Methods for repairing a thermal barrier coating deposited on a component with localized spallation of the thermal barrier coating includes depositing a primer slurry on a thermally grown oxide of the component exposed by the localized spallation, depositing a ceramic slurry on the primer slurry, and heating the primer slurry and the ceramic slurry. The primer slurry includes a primer that includes at least one of a metal and a metal oxide. The ceramic slurry includes a ceramic material, a ceramic slurry binder material, and a ceramic slurry fluid carrier. Heating the primer slurry and the ceramic slurry forms a first chemical bond between the primer and the thermally grown oxide and a second chemical bond between the primer and the ceramic material.

The application provides a method for forming a deep trench isolation structure, comprising: forming a deep trench, the deep trench exposing a surface of a substrate, the deep trench having a depth along a first direction and a width along a second direction; thermally oxidizing an inner wall of the deep trench and etching back an oxide of a bottom wall of the deep trench to expose the surface of the substrate, forming a side wall oxide, the side wall oxide having a width at a lower part of the deep trench greater than a width at an upper part of the deep trench; forming a first polysilicon layer in the deep trench, the first polysilicon layer being in communication with the substrate; removing the first polysilicon layer at the upper part of the deep trench to form a first recess; forming a second oxide layer on a side wall of the first recess, a surface of the remaining first polysilicon layer and a surface of a nitride layer; removing the second oxide layer on the first polysilicon layer and the second oxide layer on the surface of the nitride layer to form a second recess; and forming a second polysilicon layer in the second recess, the second polysilicon layer being in communication with the first polysilicon layer.

A method for forming a semiconductor structure, comprising: providing a first silicon substrate and a second silicon substrate, the first silicon substrate comprising opposite first and second surfaces; subjecting the first silicon substrate to a thermal oxidation process to form an insulating oxide layer on the second surface of the first silicon substrate; implanting ions into the first surface of the first silicon substrate to form a sacrificial layer; bonding the second surface of the first silicon substrate to the second silicon substrate; and removing the sacrificial layer by a lift-off process to form a top silicon layer, the top silicon layer, the insulating oxide layer and the second silicon substrate forming a silicon-on-insulator substrate. The sacrificial layer in the first silicon substrate is removed by a lift-off process, compared with a separation process by high-temperature annealing in the prior art, the separation process effectively reduces the preparation cost, and can precisely control the thickness of the top silicon layer and ensure the uniformity of the surface of the top silicon layer.

The invention provides a hard carbon negative electrode material, a preparation method thereof and a sodium ion battery, and belongs to the technical field of electrochemical energy storage materials. The preparation method of the hard carbon negative electrode material comprises the following steps: uniformly mixing a biomass carbon source, an energetic catalyst, a cross-linking agent and a doping agent to obtain a precursor mixture; in an air atmosphere, heating the precursor mixture to a triggering temperature and carrying out heat preservation, triggering the precursor mixture and carrying out a self-exothermic oxidation-reduction reaction to obtain a primary carbide; cooling the primary carbide to room temperature, crushing and washing to obtain a hard carbon crude product; and uniformly mixing the hard carbon crude product with a modifier, and carbonizing in an inert atmosphere to obtain the hard carbon negative electrode material.

The application discloses a vibrating diaphragm and a preparation method thereof. The preparation method comprises the following steps: providing a silicon substrate; forming a groove on the silicon substrate; forming an oxide layer on the upper surface of the silicon substrate and the inner wall of the groove through a thermal oxidation process; removing the oxide layer; forming a dielectric layer on the upper surface of the silicon substrate and in the groove through a deposition process; and forming a vibrating diaphragm on the dielectric layer through a deposition process. The technical scheme can effectively eliminate the sharp corners at the wrinkle of the vibrating diaphragm, and improve the reliability of the vibrating diaphragm.

This invention relates to a method for testing twin defects in pre-oxidized wafers using a particle testing machine, belonging to the field of semiconductor wafer defect detection technology. The method includes the following steps: Step 1: Thermal oxidation preparation; the grown oxide film is obtained through wet oxidation in an oxidation furnace, and the wafer is cleaned using a final cleaning machine. Step 2: Particle testing method optimization and film establishment. Step 3: Result comparison and verification; by establishing an Oxide Film model, the signal processing algorithm of the particle testing machine can distinguish between particle signals and twin signals, thereby achieving synchronous capture. Step 4: By optimizing the particle testing machine method, twin defect detection of the pre-oxidized wafer is successfully completed simultaneously during particle testing. By optimizing the particle testing machine method, synchronous detection of particle testing and twin defects is achieved, thereby improving detection efficiency, shortening the process, and maintaining the integrity of the sample.

This invention provides a method for forming a waveguide structure and a blazed grating. The method for forming the waveguide structure includes: step S11: providing a silicon material layer; step S12: etching a portion of the silicon material layer to form multiple steps on the surface of the silicon material layer; step S13: oxidizing the surface of the silicon material layer using a thermal oxidation process to form a silicon oxide layer; step S14: wet etching the silicon oxide layer; step S15: repeating steps S13 to S14 to make the surface of the stepped silicon material layer become a smooth slope shape. In the waveguide structure of this invention, the smooth slope of the silicon material layer can form a waveguide structure with gradually varying thickness, thereby reducing coupling loss.

The present invention relates to a method of smelting a metalliferous feed material. More particularly, the present invention relates to a method of smelting composite agglomerates comprising a metalliferous feed material, a reducing agent and a fluxing agent using a hot oxidising gas. According to a first aspect of the invention, there is provided a method of carbothermic smelting of a metalliferous feed material using an oxidising gas, comprising the steps of: (i) feeding composite agglomerates into a reactor to create a packed bed within the reactor; wherein the agglomerates comprise a metalliferous feed material, a reducing agent and a fluxing agent; (ii) heating and smelting the agglomerates using a hot oxidising gas, wherein the hot oxidising gas enters the reactor and passes through the packed bed to form a molten material comprising an intermediate slag component and a partially reduced metalliferous component; (iii) introducing the molten material into an electric slag cleaning furnace; (iv) adding additional reducing agent to the molten material in the electric slag cleaning furnace to form a liquid metal product, a liquid slag product and a CO-containing gas; and (v) combusting the CO-containing gas with preheated air to form a hot oxidising gas enriched in oxygen which then enters the reactor in step (ii); wherein the temperature of the hot oxidising gas entering the reactor is controlled to be above 1400°C, and wherein the oxygen content of the hot oxidising gas is controlled to be between 0% and 20%.

This invention provides a method for preventing overheating and expansion during welding of tube sheets and heat exchanger tubes, and a tube sheet heat exchanger, relating to the field of heat exchanger manufacturing technology. The method includes: planning a welding sequence based on multiple tube sheet joints to be welded on the tube sheet, ensuring that consecutive tube sheet joints are not spatially adjacent; welding is performed according to the welding sequence, while simultaneously using heat-conducting fixtures to contact the tube sheet joints and dissipate heat; after welding a predetermined number of tube sheet joints, the weld temperature is detected and compared with a preset temperature threshold: if the weld temperature is less than or equal to the preset temperature threshold, welding continues with the next set of tube sheet joints; if the weld temperature is greater than the preset temperature threshold, welding is paused and the weld is cooled until the weld temperature drops below or equal to the preset temperature threshold. Through a synergistic mechanism of path dispersion, active heat conduction, and closed-loop temperature control, the method overcomes the problems of weld overheating oxidation, microstructure deterioration, and poor process stability caused by differences in thermal conductivity between dissimilar metals and heat accumulation during batch welding.

This application discloses a method for fabricating a semiconductor device, relating to the field of semiconductor device technology. The method includes: forming a trench structure with a high aspect ratio on a silicon substrate, and forming an interface oxide layer on the surface of the silicon substrate and the bottom and sidewalls of the trench structure; depositing a crystalline silicon layer within the trench structure; performing a thermal oxidation treatment on the crystalline silicon layer to partially oxidize it to form a silicon oxide layer; etching the silicon oxide layer to expose the crystalline silicon layer; sequentially performing the deposition process, thermal oxidation treatment, and etching treatment on the exposed crystalline silicon layer surface, and repeating the deposition process, thermal oxidation treatment, and etching treatment at least once; depositing a crystalline silicon layer to fill the trench structure; and planarizing the crystalline silicon layer using a chemical mechanical polishing process to obtain a semiconductor device. The semiconductor device with a high aspect ratio trench structure in this application can achieve completely dense filling, and the fabrication process is simple.

This invention provides a method for high-concentration thick silicon layer doping, belonging to the field of semiconductor silicon doping technology. The invention uses a fixed closed-loop processing unit consisting of shallow junction phosphorus ion implantation, high-temperature annealing, dry oxygen thermal oxidation, and CMP oxide layer removal, repeating this cycle 9 or 10 times to prepare the doped layer. Utilizing the Si / SiO₂ interface dragging effect, the junction depth is gradually increased round by round. Combined with a segmented gradient phosphorus implantation scheme of high dose in the first three rounds and low dose in subsequent rounds, this overcomes the limitation of phosphorus solid solubility in the silicon substrate. The final result is a doped layer with a thickness of 20.1~20.2 μm and a phosphorus doping concentration ≥1×10⁻⁶. 20 This invention produces heavily doped silicon with atoms / cm³ and concentration fluctuation ≤5%. It solves the industry problems of thin doped layers, low concentration, and poor uniformity in existing processes. The entire process is compatible with existing mass production lines, and the prepared silicon substrates are widely used in power semiconductors, RF substrates, and MEMS devices, showing excellent industrialization prospects.

This invention relates to the field of semiconductor manufacturing, and in particular to a method, apparatus, and heat-treated wafer thermal oxidation method. The method involves rotating the wafer to be processed; feeding the rotated wafer into a tripod boat; and aligning the line connecting the center of the wafer to be processed with the top leg of the tripod boat with the center of the wafer to be processed. <110> The included angle between crystal orientations is within a first preset range; the wafer to be processed in the tripod crystal boat is subjected to thermal oxidation treatment. This invention targets the tripod crystal boat by changing a specific crystal orientation on the wafer to be processed (i.e., <110> The angle between the crystal orientation and the line connecting the top foot to the wafer center, and the inner edge of the wafer. <110> The shear stress of the crystal orientation is greatly reduced, which weakens the deformation caused by stress, thereby reducing the surface defects generated in the wafers during the thermal oxidation stage, improving the yield of thermal oxidation, reducing the rework rate, and improving production efficiency.

This invention discloses a method for controlling the curvature of a diffuser sheet through an oxide layer, belonging to the field of power semiconductor device technology. The oxide layer is a silicon dioxide layer, and the diffuser sheet is a semiconductor silicon diffuser sheet that has been processed by a diffusion process and then bent towards the non-diffusion surface. The method includes: obtaining the stress parameters of the diffuser sheet; determining the target stress value that the silicon dioxide layer needs to provide based on the stress parameters; calculating the target thickness of the silicon dioxide layer based on the target stress value, the material parameters of the diffuser sheet and the silicon dioxide layer; and growing a silicon dioxide layer with the target thickness on the diffusion surface side, so that the stress generated by this layer cancels out the stress generated by the diffusion process in the diffuser sheet, thereby controlling the curvature. This invention accurately calculates the required oxide layer thickness using a theoretical model, utilizes the stress provided by the thermally oxidized silicon dioxide layer to counteract the stress introduced by phosphorus diffusion, precisely controls the curvature without damaging the non-diffusion polished surface, and is compatible with existing processes.

The application discloses a vanadium ion flow battery with a praseodymium sulfide composite graphite felt electrode and belongs to the technical field of flow battery electrodes. The electrode comprises a graphite felt base body and a surface-loaded praseodymium sulfide composite layer, the composite layer is composed of praseodymium sulfide nanoparticles and carbon nanomaterials, and the particle size of the nanoparticles is 5-50 nm. Preparation is carried out by mixing a praseodymium source and a sulfur source to prepare a precursor, mixing the precursor with a carbon nanomaterial dispersion liquid, performing graphite felt thermal oxidation pretreatment, hydrothermal reaction, washing and drying, and inert atmosphere heat treatment. In the application, inorganic rare earth praseodymium sulfide is used to replace organic sulfide and nitrogen-doped carbon material, Pr 3+ / Pr 4+ is used to realize efficient catalysis, the electrode is resistant to strong acid, stable in a wide temperature range, firmly combined at an interface, and long in cycle life. The electrode can be used in all-vanadium, zinc-bromine, iron-chromium and other flow batteries, is also applicable to the fields of hydrogen production by electrolysis, supercapacitors and electrocatalysis, and is mild in process and easy to scale up.

This application provides a stacked transistor and its fabrication method, a semiconductor device, and an electronic device. The method includes: forming a stacked structure on a substrate; the stacked structure includes a front active layer, a first sacrificial layer, a back active layer, a second sacrificial layer, and a third sacrificial layer stacked sequentially in a first direction; etching the stacked structure to form an active structure; depositing an insulating material on the substrate to form a shallow trench isolation layer; forming a first gate oxide layer on the active structure by thermal oxidation; forming a dummy gate structure; performing a first wafer flip and thinning the substrate to expose the shallow trench isolation layer; forming a back transistor; performing a second wafer flip; forming a front transistor; before or after the first wafer flip, the method further includes: exposing a first surface of the back active structure that is away from the front active structure; performing a thermal oxidation treatment on the first surface to form a second gate oxide layer; the second gate oxide layer and the first gate oxide layer jointly encapsulate the active structure.

This invention discloses a catalyst for topological interface engineering-controlled lattice oxygen, its preparation method, and its application, belonging to the field of catalyst technology. The invention prepares a catalyst via a two-step method of electrochemical etching and thermal oxidation. The catalyst has an IrGa intermetallic compound core, a Ga-vacancy-rich transition layer in the middle, and a crystalline IrO2 layer as the outer shell. This invention modulates the local electronic structure of the catalyst through the interface topological confinement effect, breaking the trade-off bottleneck between high activity and structural instability under the LOM mechanism in acidic OER. By suppressing the accumulation and dissolution of deep lattice defects, a reversible lattice oxygen redox process is achieved, thereby improving the catalyst's lifetime, activity, and stability.

A semiconductor device and a method for manufacturing the same are disclosed. The method includes: providing a semiconductor substrate; etching the semiconductor substrate to form trenches in the semiconductor substrate; forming a sacrificial layer in the trenches; performing a thermal oxidation process to form oxide layers on the surface of the semiconductor substrate and the surface of the sacrificial layer; and removing the oxide layer and the sacrificial layer to expose the trenches with rounded top corners. This method improves the electric field concentration effect that occurs during operation of the trench structure subsequently formed in the trenches, mitigates the leakage current problem of the trench structure, and thereby enhances the long-term reliability of the semiconductor device.

This invention belongs to the field of antibacterial nanomaterials, specifically relating to nanoparticles that inhibit methicillin-resistant Staphylococcus aureus (MRSA) resistance. The nanoparticles have a three-layer structure, consisting of a core layer composed of a copper nanoparticle and a copper oxide composite, a mesoporous graphite shell, and a bis(amino)PEG coating, from the inside out. The above method achieves physical encapsulation of copper nanoparticles by graphite using a one-step plasma arc method; and constructs a Cu / Cu₂O interface through precise oxygen-controlled thermal oxidation treatment, while simultaneously achieving effective protection and exposure of the active A layer by mesoporousizing the graphite; the use of bis(amino)PEG to form a polymer coating on the nanoparticles enhances bacterial uptake capacity and improves biocompatibility. The nanoparticles prepared by this invention can increase the utilization rate of drug-resistant bacteria by inhibiting bacterial biofilm structures and efflux pumps that cause bacterial infections, thereby improving the clearance capacity against drug-resistant bacterial infections and demonstrating great potential for application and clinical translation.

This application provides an acrylic pressure-sensitive adhesive composition for railway vehicle flooring, comprising an acrylic copolymer, a tackifying resin, a crosslinking agent, an antioxidant, and a UV absorber. This application also provides a double-sided adhesive film and a railway vehicle flooring. This application uses an acrylic copolymer obtained by copolymerizing butyl acrylate, isooctyl acrylate, and acrylic acid in a mass ratio of 40-60:40-60:1-5 as the main component of the pressure-sensitive adhesive composition. This composition not only exhibits high adhesive strength but also good weather resistance, including good resistance to thermal oxidation and UV radiation. Experimental results show that the double-sided adhesive film provided in this application has excellent adhesion, weather resistance, and ease of application. It has a peel strength ≥40 at 180°C, a peel strength retention rate ≥95% after heat aging, and only slight yellowing after UV aging.

This invention provides a method for preparing a standard silicon wafer and a method for calibrating a planarity measurement device, comprising: providing a silicon wafer; performing a first heat treatment on the silicon wafer to grow an oxide layer on the surface of the silicon wafer; and performing a second heat treatment on the silicon wafer after the oxide layer has grown to improve the surface roughness of the oxide layer through a high-temperature decomposition reaction; wherein the first heat treatment includes: heating to a first heat treatment temperature and maintaining the first heat treatment time in an atmosphere containing oxygen; the second heat treatment includes: heating to a second heat treatment temperature and maintaining the second heat treatment time in an atmosphere containing argon. The preparation method provided by this invention, by combining a two-step process of "thermal oxidation growth" and "high-temperature decomposition and reconstruction," creates a standard wafer surface that possesses both the purity of the thermal oxide layer and the specific and uniform surface roughness obtained through high-temperature decomposition, meeting the stringent calibration requirements of non-contact planarity measurement devices that are extremely sensitive to cleanliness.

This invention relates to the field of waste gas treatment technology, specifically a method for treating volatile organic compound (VOC) waste gas using a molecular sieve adsorption rotor. The method includes: sequentially passing the VOC-containing waste gas to be treated through a filter to remove particulate matter, followed by a condensation and dehumidification device to reduce the relative humidity of the waste gas to below 50%; introducing the treated waste gas into a molecular sieve adsorption rotor system, where it enters the adsorption zone for adsorption purification; performing staged desorption on the saturated molecular sieve rotor, with the desorption temperature dynamically planned by an optimization control system; recovering waste heat from the high-temperature enhanced desorption zone via a heat exchanger; introducing low-temperature gas into a cooling zone to forcibly cool the rotor area; and sending the high-concentration VOC concentrated gas obtained from desorption into a thermal oxidation treatment device for further processing. This invention organically integrates a four-zone gradient desorption hardware structure with an optimization control system, ensuring sufficient desorption of high-boiling-point components while avoiding the risk of zeolite crystal damage or smoldering caused by localized overheating through a dry-burning effect suppression mechanism.