831 results about "Thermal oxidation" patented technology

The invention discloses an RTO heat storage type incineration method waste gas treatment device which comprises a spraying adsorption box, one side of the spraying adsorption box is fixedly connected with a connecting pipe, the other end of the connecting pipe is fixedly connected with a gas inlet pipe, an impurity removal device is arranged on the inner side of the gas inlet pipe, a stirring assembly is arranged in an inner cavity of the spraying adsorption box, and the stirring assembly is fixedly connected with the spraying adsorption box. The waste gas treatment device has the advantages that through the arrangement of a filter plate, particle impurities contained in waste gas can be conveniently blocked at the front end of the filter plate, at the moment, airflow generated by the waste gas can conveniently drive a plurality of spiral blades to rotate, and therefore the waste gas treatment device is convenient to use. Furthermore, a rotating shaft can conveniently drive a cleaning brush to rotate and sweep at the front end of a filter plate, particle impurities on the outer side of the filter plate are removed, and at the moment, the particle impurities fall into a material collecting drawer under the action of gravity to be collected.

The invention provides a hydrogen production electrode doped with platinum, ruthenium, tin and praseodymium, a preparation method of the hydrogen production electrode and a water electrolysis hydrogen production device, and relates to the field of water electrolysis hydrogen production. The preparation method of the hydrogen production electrode doped with platinum, ruthenium, tin and praseodymium comprises the following steps: coating the surface of a conductive substrate with mixed powder; the conductive base material coated with the mixed powder is subjected to thermal oxidation treatment, the mixed powder comprises first metal powder, second metal powder and a pore forming agent, the first metal powder comprises Ni powder, and the second metal powder comprises Pt powder, Ru powder, Sn powder and Pr powder; and putting the structure subjected to thermal oxidation treatment into an alkaline solution, and activating to obtain the hydrogen production electrode doped with platinum, ruthenium, tin and praseodymium. The platinum, the ruthenium, the tin and the praseodymium are introduced into the hydrogen production electrode, so that the hydrogen evolution overpotential can be reduced. The hydrogen production electrode prepared by the method disclosed by the invention has relatively high catalytic activity, relatively high stability and a uniformly distributed porous structure, the electrolytic efficiency can be remarkably improved, and the service life of equipment is prolonged.

The invention relates to the technical field of atmospheric pollution control, in particular to atmospheric environmental pollution control cleaning equipment which comprises an air inlet pipeline connected with a thermal oxidation furnace and further comprises a middle pipeline, a gas inlet pipe, a gas outlet pipe, a gas inlet pipe, a gas outlet pipe, a gas inlet pipe and a gas outlet pipe, the middle pipeline is communicated with the gas inlet pipeline, and the diameter of the middle pipeline is larger than that of the gas inlet pipeline; the plurality of filter screens are movably arranged in the middle pipeline and are used for filtering gas entering the gas inlet pipeline; according to the atmospheric environment pollution abatement cleaning equipment, when a worker treats waste gas, gas entering the gas inlet pipeline can drive the automatic switching unit to accumulate force, and after a filter screen in the gas inlet pipeline is blocked, the automatic switching unit can automatically switch the waste gas in the gas inlet pipeline. And the automatic switching unit triggers and releases the force to drive the plurality of filter screens to automatically rotate and switch, so that the gas in the gas inlet pipeline can be filtered all the time, the heat accumulating type thermal oxidation furnace does not need to stop and wait, and the continuity of waste gas treatment is ensured.

A method of manufacturing a semiconductor device includes: preparing semiconductor substrate having a front surface and a back surface opposite to each other, the semiconductor substrate being of a first conductivity type; forming a device structure in the semiconductor substrate, at the front surface; performing thermal oxidation to form a gate insulating film and depositing a polysilicon to form a plurality of gate electrodes; removing the polysilicon at the back surface of the semiconductor substrate while leaving an oxide film formed at the back surface and a side surface of the semiconductor substrate by the thermal oxidation; forming a surface electrode on the device structure; and forming a plating film on the surface electrode while continuing to leave the oxide film at the back surface and the side surface of the semiconductor substrate.

The invention provides a silicon carbide trench MOSFET device with a three-side trench structure and a preparation method thereof, and the method comprises the steps: growing a silicon carbide epitaxy on a silicon carbide substrate, and carrying out the injection to form a P-well region; forming a first barrier layer on the P-well region, and performing injection to form a P + region; removing the first barrier layer to form a second barrier layer, and performing injection to form an N + region; removing the second barrier layer, and simultaneously performing rapid thermal annealing on the P-well region, the P + region and the N + region; forming a third barrier layer, and etching to form a gate trench region; removing the third barrier layer, and performing dry-oxygen thermal oxidation to form a gate oxide layer; forming polycrystalline silicon by using chemical vapor deposition; after the polycrystalline silicon is doped, etching is carried out to form a grid electrode; and depositing metal to form a drain electrode and a source electrode, and performing rapid thermal annealing on the drain electrode and the source electrode to form ohmic contact. By arranging the three-side groove structure, the area of the channel is increased, and conduction resistance is reduced.

The invention provides an insulating material, a preparation method, application and a cable. The insulating material is prepared from the following raw materials: polyethylene, a reactive antioxidant, an initiator, a cross-linking agent and an assistant cross-linking agent. The reactive antioxidant comprises one or more of a hindered phenol group, an allyl group, an acrylic acid group, an acrylate group, a carboxylic acid group, an anhydride group and an anhydride derivative group; the number of impurity particles with the particle size of 50-70 microns contained in the polyethylene is less than 3. The reactive antioxidant can be grafted to a polyethylene molecular chain through melting, and the grafted reactive antioxidant is not easy to migrate in the use process and shows excellent long-term thermal oxidation stability and space charge inhibition capability, so that the electrical performance and thermo-oxidative aging resistance of the insulating material are improved.

The invention provides a manufacturing method of a groove type semiconductor structure, which comprises the following steps: after forming a groove, growing a thermal oxide layer, depositing an oxide layer on the surface of the thermal oxide layer through chemical vapor deposition, the thickness of the thermal oxide layer is A, the total thickness of the thermal oxide layer and the chemical vapor deposition oxide layer is B, and the range of A / B is 38%-46%. According to the invention, the trench side wall oxide layer is manufactured by several times and by adopting different methods, the stacked trench side wall oxide layer is obtained, the film layer stress is reduced by adjusting the film layer thickness ratio of the thermal oxide layer to the chemical vapor deposition oxide layer, the wafer warping degree is weakened, and the process is optimized on the basis of not influencing the electrical property. In the optional scheme of the invention, the stress of the front surface film layer can be balanced by forming the back surface deposition layer on the back surface of the wafer, the warping degree is further reduced, the method is simple and convenient, the operability is high, and the front surface structure is not influenced.

The invention provides a preparation method of a semiconductor structure, and particularly relates to the technical field of semiconductors. The preparation method of the semiconductor structure comprises the steps that a substrate is provided, the substrate comprises a substrate body, a pad oxide layer, a first pad nitride layer and a plurality of groove isolation structures, the pad oxide layer covers the portion, between every two adjacent groove isolation structures, of the substrate body, the first pad nitride layer covers the surface of the pad oxide layer, and the groove isolation structures are at least partially exposed out of the substrate body; removing the first pad nitride layer; performing ion implantation on the substrate; carrying out thinning treatment on the pad oxide layer; forming a second pad nitride layer on the surfaces of the trench isolation structure and the pad oxide layer; etching the second pad nitride layer, the pad oxide layer and the substrate by taking the patterned photoresist as a mask so as to form an opening in the substrate; and performing thermal oxidation treatment on the substrate in the opening to form an oxide layer. By adopting the preparation method of the semiconductor structure, the speed of a semiconductor device can be increased, and the circuit performance of the semiconductor device can be improved.

The invention provides a preparation method of a gate oxide layer and a gate, and the method comprises the steps: carrying out the rapid thermal annealing treatment of a silicon-based substrate in a nitrogen-containing gas atmosphere, which belongs to a non-destructive nitrogen doping mode, and carrying out the nitrogen pre-doping on the surface of the silicon-based substrate, so as to reduce the doping amount needed by the subsequent plasma nitrogen doping; therefore, the damage of the plasma nitrogen doping process to the SiON gate oxide layer is reduced, and the interface defect between the SiON gate oxide layer and the silicon-based substrate interface is reduced. Besides, after the nitrogen pre-doped layer is formed, the thermal oxidation process is carried out on the silicon-based substrate to form the silicon dioxide gate oxide layer, so that the damage to the SiON gate oxide layer film is reduced, and the interface defect between the SiON gate oxide layer and the silicon-based substrate interface is further reduced; moreover, the laser rapid annealing treatment can remove the intrinsic oxide layer on the surface of the SiON gate oxide layer, repair the damage to the crystal lattice of the SiON gate oxide layer caused by the plasma nitrogen doping treatment process, improve the film quality and repair the interface.

The invention belongs to the technical field of silicon dioxide preparation, and particularly relates to a preparation method of a spherical silicon dioxide anti-blocking agent for a plastic film, and the method comprises the following steps: 1) preparing spherical silicon dioxide particles by a flame method; and 2) carrying out surface modification on silicon dioxide. According to the prepared silicon dioxide anti-blocking agent, the content of SiO2 is 90%-99.9%, the content of iron is smaller than or equal to 0.01 ppm, the content of sodium ions is smaller than or equal to 0.6 ppm, and the silicon dioxide anti-blocking agent has the advantages of being narrow in particle size distribution (D50: 150-1000 nm), excellent in dispersity, low in oil absorption value (15-30 mL / 100 g) and the like. The modified silicon dioxide is compounded with a plastic matrix to prepare a film, and compared with a plastic film without the silicon dioxide anti-blocking agent, the silicon dioxide anti-blocking agent can remarkably improve the anti-blocking performance and mechanical properties of the plastic film, for example, the tensile strength is improved by 10-30%, the elongation at break is improved by 10-30%, and the light transmittance is larger than 92%. Meanwhile, the thermal oxidation yellowing phenomenon caused by metal ions can be effectively inhibited.

The invention provides a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate which is internally provided with a first region and a drift region, and the first region is adjacent to the drift region; forming a first dielectric material layer on the substrate by adopting a thermal oxidation process; a part of the first dielectric material layer is removed to obtain a first dielectric layer, the first dielectric layer covers the first region and a part of the drift region adjacent to the first region, and the first dielectric layer above the part of the drift region adjacent to the first region serves as a first field dielectric layer; and forming a second field dielectric layer on the first field dielectric layer. Compared with a mode of directly forming the field dielectric layer with the first thickness on the surface of the drift region through a low-temperature deposition process, the first field dielectric layer is formed through a thermal oxidation process, so that the interface defect density of the field dielectric layer and the drift region can be reduced, and the reliability of the semiconductor structure is improved.

The invention discloses a preparation method of a nano silicon dioxide modified high-density polyethylene wear-resistant plate, and belongs to the technical field of polyethylene plates, the method comprises the following steps: firstly preparing an antioxidant PMMA microcapsule, then preparing titanium dioxide and silicon dioxide, and modifying by KH550 to obtain modified nano titanium-silicon composite particles; then, an antioxidant coated PMMA microcapsule, the modified nano titanium-silicon composite particles, POE-g-MAH and HDPE particles are premixed, and the wear-resistant plate is obtained through twin-screw extrusion granulation and pulsating force field assisted molding; through the synergistic effect of the antioxidant coated PMMA microcapsule, the modified nano titanium-silicon composite particles and the compatilizer POE-g-MAH, the problems that the wear resistance of the HDPE plate is insufficient and the antioxidant is easily adsorbed by nano silicon dioxide to cause aging resistance attenuation are solved, and the wear resistance, thermal oxidation / light aging resistance and mechanical property improvement of the plate are realized; and the requirements of high-frequency wear scenes such as mine conveying and outdoor engineering can be met.

The invention provides a method for improving the thickness of an oxide on the side wall of a deep trench, and the method comprises the steps: providing a substrate, forming an epitaxial layer on the substrate, and sequentially forming a pad oxide layer, an etching stop layer, a polycrystalline silicon layer and a hard mask layer on the epitaxial layer; a photoresist layer is formed on the hard mask layer, the exposure focal length is adjusted to open the photoresist layer so as to define the forming position of the deep groove, the exposed hard mask layer is opened through etching to form an opening pattern, the side wall of the opening pattern is in an inclined shape, and the section of the opening pattern is in a trapezoid shape with the wide upper portion and the narrow lower portion; a deep groove is formed through etching, and the remaining photoresist layer is removed; forming a thermal oxide layer on the side walls of the polycrystalline silicon layer and the deep trench by using a thermal oxidation method, wherein the thermal oxide layer at the side wall of the polycrystalline silicon layer is in a convex shape; etching the thermal oxide layer to enable the thermal oxide layer to be reserved on the side wall of the deep groove; and forming a filling layer for filling the residual deep groove by using a deposition and grinding method. The method can improve the thickness of the oxide layer on the side wall of the deep trench.

The utility model relates to the technical field of industrial gas purification and heat energy recovery, and discloses a volatile organic compound-containing gas purification and heat recovery system, which comprises an oxygen supply element, an oxygen dilution device, a raw material gas mixing tank, a heat storage type thermal oxidation furnace, a waste heat recovery device and a purified gas mixing device which are communicated in sequence, wherein the raw material gas mixing tank is provided with an inlet of gas containing volatile organic compounds; and an outlet of the heat accumulating type thermal oxidation furnace is connected with an inlet of the oxygen diluting device and an inlet of the purified gas mixing device. According to the purification and heat recovery system for the gas containing the volatile organic compounds, the gas containing the volatile organic compounds is removed, heat exchange is carried out on cold water in the waste heat recovery device through high-temperature purified gas generated by the heat storage type thermal oxidation furnace, and the energy recovery utilization rate is increased; meanwhile, part of purified gas is returned to the oxygen dilution device, so that the utilization rate of oxygen is increased.

A regenerative thermal oxidizer assembly includes a first housing member and a second housing member. The first housing member defines a regenerative portion and a combustion chamber. The second housing member defines an inlet chamber and an outlet chamber. A regenerator is disposed within the regenerative portion of the first housing member. A thermal element extends through the first housing member into the combustion chamber for providing heat to the combustion chamber for initiating combustion inside the combustion chamber. The first housing member is rotatable around a central axis relative to the second housing member for rotating the regenerator relative to the inlet chamber and the outlet chamber.

The invention discloses an integrated treatment method and system suitable for multi-component industrial waste gas, and relates to the technical field of industrial waste gas treatment, and the method comprises the steps of S1, waste gas pretreatment, S2, pre-oxidation and sulfur fixation, S3, thermal oxidation, S4, non-quenching temperature self-adaptive adjustment, S5, selective catalytic reduction denitration, S6, emission and monitoring, and S7, intelligent dynamic system control. The gradient temperature field of the heat storage ceramic body is used for providing accurate and stable air inlet temperature for the SCR reaction, an independent quenching device is omitted, and therefore the comprehensive energy consumption and the operation cost of the system are greatly reduced, and by additionally arranging the pre-oxidation layer and adopting the dual-function SCR catalyst, the heat storage effect of the system is greatly improved. The system effectively realizes advanced fixation of organic sulfur and efficient removal of nitrogen oxides, dynamically adjusts the ammonia injection amount and combustion intensity, ensures that the system can still maintain extremely high treatment efficiency and stability under flow fluctuation and complex working conditions, reduces ammonia escape to the greatest extent, and is convenient to use.

The invention discloses a recyclable porous copper / cuprous oxide filamentous catalytic material and also discloses a preparation method of the catalytic material, and the preparation method comprises the following steps: taking a copper wire and pre-treating the copper wire to remove surface oxides; performing zinc electrodeposition treatment on the copper wire to obtain a galvanized copper wire; carrying out solution treatment on the galvanized copper wire to obtain a porous copper precursor; then, the porous copper precursor is subjected to corrosion treatment, zinc in a plating layer is removed, and a porous copper catalyst carrier is obtained; and putting the porous copper catalyst carrier into a tubular furnace for high-temperature oxidation to obtain the Cu / Cu2O filamentous catalytic material. The catalytic material provided by the invention has the characteristics of recoverability and good catalytic performance. According to the method, cuprous oxide is generated by adopting a one-step high-temperature thermal oxidation method, and regulation and control parameters are few and easy to control in the process.

The invention provides an interstitial oxygen doped Ti-Zr-Nb-Al medium-entropy alloy with a superhard oxide layer, and the expression of the alloy is (TiaZrbNbcAld) 100-eOe, wherein a is greater than or equal to 36at.% and less than or equal to 50at.%, b is greater than or equal to 36at.% and less than or equal to 49at.%, c is greater than or equal to 3at.% and less than or equal to 17at.%, d is greater than or equal to 1at.% and less than or equal to 7at.%, e is greater than or equal to 0.5 at.% and less than or equal to 2.0 at.%, and a + b + c + d is equal to 100at.%. The preparation method comprises the steps that all the raw materials are mixed and smelted to prepare a cast ingot, grinding and polishing are conducted after linear cutting, and the interstitial oxygen doped Ti-Zr-Nb-Al medium-entropy alloy with the superhard oxide layer is obtained. And then thermal oxidation is conducted for 6 h in the air atmosphere at the temperature of 500 DEG C, and after natural cooling is conducted to the room temperature, the interstitial oxygen doped Ti-Zr-Nb-Al medium-entropy alloy with the superhard oxide layer is obtained. The invention further provides application of the medical orthopedic implant material. The interstitial oxygen doped Ti-Zr-Nb-Al medium-entropy alloy with the superhard oxide layer prepared by the invention has lower elastic modulus, the surface of the oxidation-state alloy has ultrahigh hardness, the wear resistance is good, and the interstitial oxygen doped Ti-Zr-Nb-Al medium-entropy alloy can be used as a medical orthopedic implant material.

A hydrogen gas sensor with a substrate and a zinc oxide nanostructured thin film deposited on the substrate, wherein the zinc oxide nanostructured thin film has a lattice structure with a weight ratio of low binding energy O2− ions to medium binding energy oxygen vacancies in a range of 0.1 to 1.0, and a method of fabricating a gas sensor by thermally oxidizing a metal thin film under low oxygen partial pressure. Various combinations of embodiments of the hydrogen gas sensor and the method of fabricating the gas sensor are provided.

The invention provides an MOS device and a manufacturing method thereof, and the method comprises the steps: forming a basic oxide layer on the surface of a semiconductor substrate through a rapid thermal oxidation method, introducing nitrogen into the basic oxide layer until the average nitrogen concentration reaches a preset value, and enabling the part with the maximum nitrogen ion concentration to be far away from the interface distribution of the basic oxide layer / semiconductor substrate, and then carrying out annealing treatment after nitriding and manufacturing the PMOS transistor, wherein a gate dielectric layer of the PMOS transistor adopts the basic oxide layer after nitrogen introduction. According to the invention, the basic oxide layer is formed by adopting a rapid thermal oxidation method, so that the introduction of hydrogen can be reduced, the maximum concentration of nitrogen ions is distributed far away from the interface, so that the influence on Si-H bonds can be reduced, the interface defects are reduced, and the NBTI service life is prolonged. According to the invention, the stress proximity technology can be further introduced to improve the performance of the NMOS, the buffer layer is utilized to block the damage of plasma to the gate dielectric layer in the forming process of the silicon nitride tensile stress layer, the quality of the gate dielectric layer is improved, and the reliability of the device is further improved.

The invention relates to the technical field of RTO treatment, and discloses a cyclic regeneration type anti-blocking RTO treatment device which comprises an incinerator, three heat storage chambers are arranged in the incinerator, each heat storage chamber is internally provided with a heat storage body, each heat storage chamber is provided with a vibration assembly, and the vibration assemblies are arranged in the heat storage chambers. The rotating speed monitoring assembly monitors the rotating speed of the turbine to reflect the blocking condition of the heat accumulator, if the rotating speed of the turbine exceeds a threshold value, it is indicated that blocking of the heat accumulator is serious, at the moment, the vibration assembly vibrates the heat accumulator to assist impurity separation till compressed gas can normally pass through the heat accumulator, and in this way, vibration intervention of the vibration assembly is actively conducted; the device helps to separate impurity particles in the heat accumulator, enables compressed gas to pass through normally, solves the problems of difficult cleaning and long blowback time in severe blockage in a traditional mode, enhances the ability of the system to deal with complex blockage conditions, and guarantees stable operation of the system.

A method for manufacturing a low-angle blazed grating on a semiconductor or silicon substrate, includes spin-coating the substrate with resist layer or hydrogen or polysilsesquioxane, being 100-1000 nm or few hundred nanometers thick, applying grayscale irradiation lithography exposure to the resist layer, generating a dose modulated pattern therein, varying in response to absorbed energy density from irradiation lithography exposure. The coated, irradiated substrate is developed in solution, such as TMAH or NaOH, enabling a blazed profile having structures of thickness-dependent diffusion barriers or SiO2, with 0-1000 nm height to emerge. Thermal oxidation in oxygen atmosphere at elevated temperature with the developed substrate, converts the upper silicon substrate layer into SiO2 to a depth depending on the thickness of the pattern in the resist layer above. Hydrofluoric acid fluid removes the SiO2, creating low-angle low-roughness blazed grating structure on silicon substrate.

The invention provides a through hole microneedle and a preparation method thereof, and the method comprises the following steps: providing a silicon wafer, and sequentially forming a silicon nitride layer and a silicon oxide layer on the front surface and the back surface of the silicon wafer; forming a first etching mask on the front surface of the silicon wafer by utilizing photoetching and etching processes, and carrying out first deep silicon etching to form a semi-through deep hole; forming a second etching mask on the back surface of the silicon wafer by utilizing photoetching and etching processes, and carrying out secondary deep silicon etching to form a through deep hole to obtain a pinhole structure; removing the silicon oxide layers on the front surface and the back surface of the silicon wafer; forming a silicon oxide layer on the inner wall of the deep hole by adopting a thermal oxidation process; forming silicon nitride layers on the front surface and the back surface of the silicon wafer and the inner wall of the deep hole; removing all the silicon nitride layers on the front surface of the silicon wafer; etching the silicon wafer by using an anisotropic wet method to form a needle body structure; and removing the residual silicon nitride layer and the residual silicon oxide layer.

The invention discloses a preparation method of an ultralow gate charge shield gate MOSFET device and the device, and the method comprises the steps: depositing a layer of oxide on the surface of a wafer to be etched, then covering photoresist, and etching the oxide to the surface of the wafer; etching the oxide on the surface of the wafer, and growing an oxide layer in the groove and on the surface of the wafer to obtain an oxide film serving as an isolation layer; depositing an oxide with a first thickness in the groove and on the surface of the groove, and grinding the oxide to a position with a second thickness from the surface of the wafer; growing a layer of oxide on the top of the polycrystalline silicon through a thermal oxidation process again, so that the thickness of the oxide between the polycrystalline silicon on the top reaches a first target thickness; and etching all the silicon nitride and the oxide on the side wall of the groove, and then growing the gate oxide until the thickness of the gate oxide reaches a second target thickness. According to the invention, thick inter-polycrystalline silicon oxide and a thinner gate oxide layer can be obtained, the dynamic parameters of the device are reduced, and the cost is reduced.

The present disclosure provides a manufacturing method for a silicon carbide semiconductor structure, and a silicon carbide semiconductor structure. The method comprises: providing a first substrate layer, wherein the first substrate layer is made of silicon carbide; performing first thermal oxidation treatment on the surface of the first substrate layer to form a first oxide layer, and removing the first oxide layer to obtain a second substrate layer; performing second thermal oxidation treatment on the surface of the second substrate layer to form a second oxide layer, and removing the second oxide layer to obtain a third substrate layer, wherein the temperature of the second thermal oxidation treatment is less than that of the first thermal oxidation treatment, and the thickness of the second oxide layer is less than that of the first oxide layer; and performing third thermal oxidation treatment on the surface of the third substrate layer to form a gate oxide layer, wherein the temperature of the third thermal oxidation treatment is less than that of the second thermal oxidation treatment. The method solves the problems that the channel mobility is degraded and the performance of a gate oxide layer is affected due to the formation of C residues at an interface in the thermal oxidation process of the gate oxide layer.

The invention discloses a wafer-level fusion bonding method and a preparation method of an MEMS device, and the method comprises the steps: providing a first silicon wafer which is provided with a front surface and a back surface which are opposite to each other; forming a groove in the front surface of the first silicon wafer and forming a chamfer at the corner of the top edge of the groove; forming a silicon oxide dielectric layer on the front surface of the first silicon wafer in a thermal oxidation growth mode, wherein the silicon oxide dielectric layer covers the bottom of the groove, the side wall of the groove and the front surface of the first silicon wafer outside the range of the groove; providing a second silicon wafer, wherein the second silicon wafer is provided with a front surface and a back surface which are opposite; and bonding the front surface of the second silicon wafer with the silicon oxide dielectric layer on the front surface of the first silicon wafer. According to the invention, the problem of bonding failure caused by rising of the edge of the groove after thermal oxidation growth can be solved.

The invention discloses a manufacturing method of a trench gate semiconductor power device. The manufacturing method comprises the following steps: forming a first hard mask layer on a first epitaxial layer; and performing graphical etching on the first hard mask layer to open the forming region of the gate trench. And etching the first epitaxial layer to form a gate trench. And after the first hard mask layer is removed, performing a first thermal oxidation process to form a first field oxide layer on the inner side surface of the gate trench and the outer surface of the gate trench. And performing a first CVD growth process to form a second field oxide layer, and overlapping the first field oxide layer and the second field oxide layer to form a third field oxide layer. And performing a first CMP process to remove the third field oxide layer outside the gate trench. And forming a first polycrystalline silicon layer to completely fill the gate trench and extend out of the gate trench. And performing a second CMP process to flatten the first polycrystalline silicon layer. The structure consistency of the gate trench region and the platform region can be improved at the same time, and the performance and the yield of the device can be comprehensively improved.

The invention discloses a fluoride modified liquid metal medium thermite and a preparation method thereof, and belongs to the technical field of thermite preparation. Liquid metal is prepared by using Gallinstan eutectic; the method comprises the following steps: synthesizing aluminum powder and liquid metal by adopting a physical mixing and ultrasonic treatment method to obtain liquid metal modified aluminum; the preparation method comprises the following steps: adding FeCl3. 6H2O into a perfluorooctanoic acid aqueous solution, stirring and mixing, carrying out hydrothermal reaction, and washing the obtained product to obtain Fe (PFO) 3; the method comprises the following steps: mixing liquid metal modified aluminum with iron perfluorooctanoate, and carrying out ultrasonic treatment to obtain Fe (PFO) 3-coated LM-Al; fe (PFO) 3 (at) LM-Al and ferric oxide are added into absolute ethyl alcohol for ultrasonic stirring and mixing, and Fe (PFO) 3 (at) LM-Al (at) Fe2O3 is prepared. By the adoption of the method, the high-temperature thermal oxidation reaction temperature of the aluminum powder is increased to be before the melting point of 660 DEG C, and the breakthrough progress of the aluminum powder thermal mass transfer process is achieved.

The utility model belongs to the technical field of waste gas treatment, and particularly relates to RTO multi-chamber heat storage oxidizing combustion treatment equipment which comprises a base, a plurality of heat storage chambers and a combustion chamber, the heat storage chambers and the combustion chamber are all fixedly installed on the upper side of the base, a plurality of square barrels are installed on the upper side of the base, and ventilation barrels communicated with one another are arranged among the square barrels. An air inlet barrel is fixedly arranged on the side wall of the square barrel located on the right side, two baffles are fixedly arranged on the lower side of each heat storage chamber, ventilation holes are formed in the baffles, cover plates are installed on the front sides and the rear sides of the interiors of the square barrels, and control assemblies matched with the cover plates are arranged on the front sides and the rear sides of the interiors of the square barrels. Waste gas is blown into the device through an air inlet barrel, under the control of an independent control assembly, the cover plates on the front side and the rear side slide independently, ventilation holes for air inlet and exhaust of a combustion chamber are continuously replaced, and therefore the six cover plates are alternately used, and meanwhile the multiple heat storage chambers are alternately used; therefore, the service lives of the cover plate and the regenerative chamber are prolonged.

The invention relates to the technical field of semiconductor manufacturing, and discloses a method for manufacturing a semiconductor isolation structure, which comprises the following steps of: (1) forming a plurality of shallow isolation corrosion grooves on one surface of a monocrystalline silicon substrate by using an STI (shallow trench isolation) process; forming a plurality of deep isolation corrosion grooves in the other surface of the monocrystalline silicon substrate by using a Trench process; (2) etching and forming an isolation channel with the design thickness of d1 on the monocrystalline silicon substrate with the plurality of shallow isolation etching grooves and the plurality of deep isolation etching grooves by using a wet etching process, so that the isolation channel, the plurality of shallow isolation etching grooves and the plurality of deep isolation etching grooves are communicated with one another to form an isolation structure; and (3) putting the monocrystalline silicon substrate with the isolation structure into thermal oxidation equipment, filling the isolation structure with silicon dioxide by using a thermal oxidation process, and expanding the thickness of an isolation channel from a design thickness d1 to a target thickness d2. The isolation structure prepared by the method is good in electrical isolation capability, and can meet the requirements of products with high working voltage and large working current.