699 results about "Thermal oxidation" patented technology

A method of manufacturing a semiconductor device includes: preparing semiconductor substrate having a front surface and a back surface opposite to each other, the semiconductor substrate being of a first conductivity type; forming a device structure in the semiconductor substrate, at the front surface; performing thermal oxidation to form a gate insulating film and depositing a polysilicon to form a plurality of gate electrodes; removing the polysilicon at the back surface of the semiconductor substrate while leaving an oxide film formed at the back surface and a side surface of the semiconductor substrate by the thermal oxidation; forming a surface electrode on the device structure; and forming a plating film on the surface electrode while continuing to leave the oxide film at the back surface and the side surface of the semiconductor substrate.

The invention provides a silicon carbide trench MOSFET device with a three-side trench structure and a preparation method thereof, and the method comprises the steps: growing a silicon carbide epitaxy on a silicon carbide substrate, and carrying out the injection to form a P-well region; forming a first barrier layer on the P-well region, and performing injection to form a P + region; removing the first barrier layer to form a second barrier layer, and performing injection to form an N + region; removing the second barrier layer, and simultaneously performing rapid thermal annealing on the P-well region, the P + region and the N + region; forming a third barrier layer, and etching to form a gate trench region; removing the third barrier layer, and performing dry-oxygen thermal oxidation to form a gate oxide layer; forming polycrystalline silicon by using chemical vapor deposition; after the polycrystalline silicon is doped, etching is carried out to form a grid electrode; and depositing metal to form a drain electrode and a source electrode, and performing rapid thermal annealing on the drain electrode and the source electrode to form ohmic contact. By arranging the three-side groove structure, the area of the channel is increased, and conduction resistance is reduced.

The invention provides a preparation method of a gate oxide layer and a gate, and the method comprises the steps: carrying out the rapid thermal annealing treatment of a silicon-based substrate in a nitrogen-containing gas atmosphere, which belongs to a non-destructive nitrogen doping mode, and carrying out the nitrogen pre-doping on the surface of the silicon-based substrate, so as to reduce the doping amount needed by the subsequent plasma nitrogen doping; therefore, the damage of the plasma nitrogen doping process to the SiON gate oxide layer is reduced, and the interface defect between the SiON gate oxide layer and the silicon-based substrate interface is reduced. Besides, after the nitrogen pre-doped layer is formed, the thermal oxidation process is carried out on the silicon-based substrate to form the silicon dioxide gate oxide layer, so that the damage to the SiON gate oxide layer film is reduced, and the interface defect between the SiON gate oxide layer and the silicon-based substrate interface is further reduced; moreover, the laser rapid annealing treatment can remove the intrinsic oxide layer on the surface of the SiON gate oxide layer, repair the damage to the crystal lattice of the SiON gate oxide layer caused by the plasma nitrogen doping treatment process, improve the film quality and repair the interface.

The invention provides a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate which is internally provided with a first region and a drift region, and the first region is adjacent to the drift region; forming a first dielectric material layer on the substrate by adopting a thermal oxidation process; a part of the first dielectric material layer is removed to obtain a first dielectric layer, the first dielectric layer covers the first region and a part of the drift region adjacent to the first region, and the first dielectric layer above the part of the drift region adjacent to the first region serves as a first field dielectric layer; and forming a second field dielectric layer on the first field dielectric layer. Compared with a mode of directly forming the field dielectric layer with the first thickness on the surface of the drift region through a low-temperature deposition process, the first field dielectric layer is formed through a thermal oxidation process, so that the interface defect density of the field dielectric layer and the drift region can be reduced, and the reliability of the semiconductor structure is improved.

The invention discloses a preparation method of a nano silicon dioxide modified high-density polyethylene wear-resistant plate, and belongs to the technical field of polyethylene plates, the method comprises the following steps: firstly preparing an antioxidant PMMA microcapsule, then preparing titanium dioxide and silicon dioxide, and modifying by KH550 to obtain modified nano titanium-silicon composite particles; then, an antioxidant coated PMMA microcapsule, the modified nano titanium-silicon composite particles, POE-g-MAH and HDPE particles are premixed, and the wear-resistant plate is obtained through twin-screw extrusion granulation and pulsating force field assisted molding; through the synergistic effect of the antioxidant coated PMMA microcapsule, the modified nano titanium-silicon composite particles and the compatilizer POE-g-MAH, the problems that the wear resistance of the HDPE plate is insufficient and the antioxidant is easily adsorbed by nano silicon dioxide to cause aging resistance attenuation are solved, and the wear resistance, thermal oxidation / light aging resistance and mechanical property improvement of the plate are realized; and the requirements of high-frequency wear scenes such as mine conveying and outdoor engineering can be met.

A regenerative thermal oxidizer assembly includes a first housing member and a second housing member. The first housing member defines a regenerative portion and a combustion chamber. The second housing member defines an inlet chamber and an outlet chamber. A regenerator is disposed within the regenerative portion of the first housing member. A thermal element extends through the first housing member into the combustion chamber for providing heat to the combustion chamber for initiating combustion inside the combustion chamber. The first housing member is rotatable around a central axis relative to the second housing member for rotating the regenerator relative to the inlet chamber and the outlet chamber.

The invention discloses an integrated treatment method and system suitable for multi-component industrial waste gas, and relates to the technical field of industrial waste gas treatment, and the method comprises the steps of S1, waste gas pretreatment, S2, pre-oxidation and sulfur fixation, S3, thermal oxidation, S4, non-quenching temperature self-adaptive adjustment, S5, selective catalytic reduction denitration, S6, emission and monitoring, and S7, intelligent dynamic system control. The gradient temperature field of the heat storage ceramic body is used for providing accurate and stable air inlet temperature for the SCR reaction, an independent quenching device is omitted, and therefore the comprehensive energy consumption and the operation cost of the system are greatly reduced, and by additionally arranging the pre-oxidation layer and adopting the dual-function SCR catalyst, the heat storage effect of the system is greatly improved. The system effectively realizes advanced fixation of organic sulfur and efficient removal of nitrogen oxides, dynamically adjusts the ammonia injection amount and combustion intensity, ensures that the system can still maintain extremely high treatment efficiency and stability under flow fluctuation and complex working conditions, reduces ammonia escape to the greatest extent, and is convenient to use.

The invention discloses a recyclable porous copper / cuprous oxide filamentous catalytic material and also discloses a preparation method of the catalytic material, and the preparation method comprises the following steps: taking a copper wire and pre-treating the copper wire to remove surface oxides; performing zinc electrodeposition treatment on the copper wire to obtain a galvanized copper wire; carrying out solution treatment on the galvanized copper wire to obtain a porous copper precursor; then, the porous copper precursor is subjected to corrosion treatment, zinc in a plating layer is removed, and a porous copper catalyst carrier is obtained; and putting the porous copper catalyst carrier into a tubular furnace for high-temperature oxidation to obtain the Cu / Cu2O filamentous catalytic material. The catalytic material provided by the invention has the characteristics of recoverability and good catalytic performance. According to the method, cuprous oxide is generated by adopting a one-step high-temperature thermal oxidation method, and regulation and control parameters are few and easy to control in the process.

A hydrogen gas sensor with a substrate and a zinc oxide nanostructured thin film deposited on the substrate, wherein the zinc oxide nanostructured thin film has a lattice structure with a weight ratio of low binding energy O2− ions to medium binding energy oxygen vacancies in a range of 0.1 to 1.0, and a method of fabricating a gas sensor by thermally oxidizing a metal thin film under low oxygen partial pressure. Various combinations of embodiments of the hydrogen gas sensor and the method of fabricating the gas sensor are provided.

The invention provides an MOS device and a manufacturing method thereof, and the method comprises the steps: forming a basic oxide layer on the surface of a semiconductor substrate through a rapid thermal oxidation method, introducing nitrogen into the basic oxide layer until the average nitrogen concentration reaches a preset value, and enabling the part with the maximum nitrogen ion concentration to be far away from the interface distribution of the basic oxide layer / semiconductor substrate, and then carrying out annealing treatment after nitriding and manufacturing the PMOS transistor, wherein a gate dielectric layer of the PMOS transistor adopts the basic oxide layer after nitrogen introduction. According to the invention, the basic oxide layer is formed by adopting a rapid thermal oxidation method, so that the introduction of hydrogen can be reduced, the maximum concentration of nitrogen ions is distributed far away from the interface, so that the influence on Si-H bonds can be reduced, the interface defects are reduced, and the NBTI service life is prolonged. According to the invention, the stress proximity technology can be further introduced to improve the performance of the NMOS, the buffer layer is utilized to block the damage of plasma to the gate dielectric layer in the forming process of the silicon nitride tensile stress layer, the quality of the gate dielectric layer is improved, and the reliability of the device is further improved.

The invention relates to the technical field of RTO treatment, and discloses a cyclic regeneration type anti-blocking RTO treatment device which comprises an incinerator, three heat storage chambers are arranged in the incinerator, each heat storage chamber is internally provided with a heat storage body, each heat storage chamber is provided with a vibration assembly, and the vibration assemblies are arranged in the heat storage chambers. The rotating speed monitoring assembly monitors the rotating speed of the turbine to reflect the blocking condition of the heat accumulator, if the rotating speed of the turbine exceeds a threshold value, it is indicated that blocking of the heat accumulator is serious, at the moment, the vibration assembly vibrates the heat accumulator to assist impurity separation till compressed gas can normally pass through the heat accumulator, and in this way, vibration intervention of the vibration assembly is actively conducted; the device helps to separate impurity particles in the heat accumulator, enables compressed gas to pass through normally, solves the problems of difficult cleaning and long blowback time in severe blockage in a traditional mode, enhances the ability of the system to deal with complex blockage conditions, and guarantees stable operation of the system.

The invention discloses a preparation method of an ultralow gate charge shield gate MOSFET device and the device, and the method comprises the steps: depositing a layer of oxide on the surface of a wafer to be etched, then covering photoresist, and etching the oxide to the surface of the wafer; etching the oxide on the surface of the wafer, and growing an oxide layer in the groove and on the surface of the wafer to obtain an oxide film serving as an isolation layer; depositing an oxide with a first thickness in the groove and on the surface of the groove, and grinding the oxide to a position with a second thickness from the surface of the wafer; growing a layer of oxide on the top of the polycrystalline silicon through a thermal oxidation process again, so that the thickness of the oxide between the polycrystalline silicon on the top reaches a first target thickness; and etching all the silicon nitride and the oxide on the side wall of the groove, and then growing the gate oxide until the thickness of the gate oxide reaches a second target thickness. According to the invention, thick inter-polycrystalline silicon oxide and a thinner gate oxide layer can be obtained, the dynamic parameters of the device are reduced, and the cost is reduced.

The invention discloses a wafer-level fusion bonding method and a preparation method of an MEMS device, and the method comprises the steps: providing a first silicon wafer which is provided with a front surface and a back surface which are opposite to each other; forming a groove in the front surface of the first silicon wafer and forming a chamfer at the corner of the top edge of the groove; forming a silicon oxide dielectric layer on the front surface of the first silicon wafer in a thermal oxidation growth mode, wherein the silicon oxide dielectric layer covers the bottom of the groove, the side wall of the groove and the front surface of the first silicon wafer outside the range of the groove; providing a second silicon wafer, wherein the second silicon wafer is provided with a front surface and a back surface which are opposite; and bonding the front surface of the second silicon wafer with the silicon oxide dielectric layer on the front surface of the first silicon wafer. According to the invention, the problem of bonding failure caused by rising of the edge of the groove after thermal oxidation growth can be solved.

The invention discloses a manufacturing method of a trench gate semiconductor power device. The manufacturing method comprises the following steps: forming a first hard mask layer on a first epitaxial layer; and performing graphical etching on the first hard mask layer to open the forming region of the gate trench. And etching the first epitaxial layer to form a gate trench. And after the first hard mask layer is removed, performing a first thermal oxidation process to form a first field oxide layer on the inner side surface of the gate trench and the outer surface of the gate trench. And performing a first CVD growth process to form a second field oxide layer, and overlapping the first field oxide layer and the second field oxide layer to form a third field oxide layer. And performing a first CMP process to remove the third field oxide layer outside the gate trench. And forming a first polycrystalline silicon layer to completely fill the gate trench and extend out of the gate trench. And performing a second CMP process to flatten the first polycrystalline silicon layer. The structure consistency of the gate trench region and the platform region can be improved at the same time, and the performance and the yield of the device can be comprehensively improved.

The utility model belongs to the technical field of waste gas treatment, and particularly relates to RTO multi-chamber heat storage oxidizing combustion treatment equipment which comprises a base, a plurality of heat storage chambers and a combustion chamber, the heat storage chambers and the combustion chamber are all fixedly installed on the upper side of the base, a plurality of square barrels are installed on the upper side of the base, and ventilation barrels communicated with one another are arranged among the square barrels. An air inlet barrel is fixedly arranged on the side wall of the square barrel located on the right side, two baffles are fixedly arranged on the lower side of each heat storage chamber, ventilation holes are formed in the baffles, cover plates are installed on the front sides and the rear sides of the interiors of the square barrels, and control assemblies matched with the cover plates are arranged on the front sides and the rear sides of the interiors of the square barrels. Waste gas is blown into the device through an air inlet barrel, under the control of an independent control assembly, the cover plates on the front side and the rear side slide independently, ventilation holes for air inlet and exhaust of a combustion chamber are continuously replaced, and therefore the six cover plates are alternately used, and meanwhile the multiple heat storage chambers are alternately used; therefore, the service lives of the cover plate and the regenerative chamber are prolonged.

The invention provides an anti-overheating expansion welding method for a tube plate and a heat exchange tube and a tube plate heat exchanger, and relates to the technical field of heat exchanger manufacturing, the method comprises the following steps: planning a welding sequence according to a plurality of to-be-welded tube plate joints on the tube plate, and enabling the continuous tube plate joints on the welding sequence to be non-adjacent in spatial positions; welding is conducted according to the welding sequence, and meanwhile a heat conduction tool is used for making contact with the tube plate connector to conduct heat away; after welding of the preset number of tube plate joints is completed every time, the weld joint temperature is detected and compared with a preset temperature threshold value, and if the weld joint temperature is smaller than or equal to the preset temperature threshold value, welding of the next set of tube plate joints continues; and if the weld joint temperature is larger than the preset temperature threshold value, welding is suspended, and cooling is conducted till the weld joint temperature falls back to be lower than or equal to the preset temperature threshold value. Through a collaborative mechanism of path dispersion, active heat conduction and closed-loop temperature control, the problems of welding seam overheating oxidation, structure deterioration and poor process stability caused by heat conduction difference of dissimilar metals and heat accumulation of batch welding are solved.

A method of manufacturing a device package. The method comprises patterning a first substrate to form patterned regions comprising a thermal oxide layer. The method further comprises directly bonding the patterned regions of the first substrate to a second substrate to form a bonding interface. The bonded first and second substrates form an integrated cooling assembly comprising a coolant chamber volume. Portions of the first substrate exposed to the coolant chamber volume comprise a native oxide layer.

The invention relates to a preparation method of a groove type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), which comprises the following steps of: forming a silicon oxide layer on the top surface of a silicon carbide substrate by adopting a thermal oxidation process, and then forming a groove in the silicon oxide layer; forming an initial gate electrode in the groove and on the top surface of a part of the silicon oxide layer on the outer side of the groove; etching the silicon oxide layer until the top surface of the silicon carbide substrate is exposed by taking the initial gate electrode as a mask, and forming a gate dielectric layer covering the bottom surface and the side wall of the groove; forming an epitaxial silicon carbide layer on the top surface of the silicon carbide substrate outside the gate dielectric layer; and removing a part of the epitaxial silicon carbide layer and a part of the initial gate electrode until the top surface of the gate dielectric layer is exposed, and taking the residual initial gate electrode in the groove as a gate electrode. According to the method, the gate dielectric layer of which the shape thickness can meet the design requirement is arranged at the bottom of the groove, so that the pressure resistance of the device is improved, the defects of the gate dielectric layer and a silicon carbide substrate interface are reduced, and the reliability of the device is improved.

The invention relates to the technical field of negative-electrode-free lithium metal batteries, in particular to a three-dimensional copper-based composite current collector and a preparation method thereof. The preparation method comprises the following steps that pretreated foamy copper is subjected to thermal oxidation treatment, and oxidized foamy copper with a three-dimensional copper-based framework is prepared; the oxidized foamy copper is subjected to electro-deposition treatment, the oxidized foamy copper is modified through a lithium-containing compound, an SEI film containing C, O, F, N and Li is formed on the three-dimensional copper-based framework, and the three-dimensional copper-based composite current collector is prepared. Lithium-loving sites formed in the lithium electrodeposition process can induce lithium metal in-situ nucleation, the chemical stability of a lithium metal negative electrode / electrolyte interface is improved by utilizing electrolyte induction of an in-situ matching battery system and pre-regulation and control of interface components, and meanwhile, an SEI film rich in inorganic components is formed, so that growth of lithium dendrites is inhibited, the electrochemical performance is improved, and the electrochemical performance is improved. The technical problem that an existing copper negative electrode current collector is difficult to form a stable SEI film is solved.

The invention discloses a preparation method of an FD-SOI substrate structure through a hydrogen, boron and nitrogen ion implantation process, and belongs to the technical field of semiconductor design and manufacturing. The preparation method comprises the following steps: preparing a first wafer and a second wafer; performing thermal oxidation treatment on the surface of the first wafer; performing hydrogen ion implantation and boron and nitrogen ion implantation processes on the first wafer to enable the first wafer to form a hydrogen implantation layer below the insulating oxide layer and form a boron and nitrogen implantation layer between the hydrogen implantation layer and the insulating oxide layer; combining the surface of the insulating oxide layer of the first wafer with a second wafer through a bonding process; stripping the first wafer, and recrystallizing the top silicon film through thermal annealing treatment; and etching the top-layer silicon film to be below the boron-nitrogen injection layer through wet etching treatment, so that the top-layer silicon film reaches the required thickness. According to the invention, the required ultrathin film structure can be obtained in a more controllable manner, and the single crystal property of the top silicon film is ensured.

The invention discloses a preparation method of a semiconductor power device, and belongs to the technical field of semiconductors. Comprising the steps that an epitaxial layer and a barrier layer are sequentially arranged on a substrate layer, a groove is formed through photoetching, and a heavily-doped polycrystalline silicon layer is deposited in the groove through thermal oxidation; performing wet etching on the side wall of the groove, and performing thermal oxidation to form a gate oxide layer; the method comprises the following steps of: depositing a heavily doped polycrystalline silicon layer in a groove; performing ion implantation on the epitaxial layer in sequence; an insulating medium layer is formed above the grid polycrystalline silicon and the first isolation layer, a plurality of contact holes are etched inwards, and the distance between each contact hole and the corresponding groove is linearly increased; injecting ions into the bottom of the contact hole, and filling a metal filling layer; arranging a back drain metal layer on the back of the substrate layer; and mirroring and repeating. The manufacturing method has the beneficial effects that the basic unit cells are mirrored and repeated, so that the distance between the grooves and the contact holes is linearly increased, the heating uniformity of the device is improved, the heat dissipation capability is improved, and the safe working area of the device is widened.

The invention discloses a trimetallic spinel oxide / high-valence metal oxide composite OER electrocatalyst and a preparation method thereof. The method comprises the following steps: firstly, synthesizing trimetal LDH nanosheets with rich defects in one step through a colloid mill, then inserting high-valence transition metal oxyacid radical ions into LDH layers by utilizing an ion exchange method, and finally, enabling LDH to be topologically converted into a spinel structure by adopting a low-temperature thermal oxidation method and generating more defects at the same time, so as to prepare the composite oxide electrocatalyst. Based on the adjustable property of interlayer anions of layered double hydroxides, a nucleation crystallization isolation method, an ion exchange method and a thermal oxidation technology are combined, the composite oxide electrocatalyst with an ultrathin nanosheet structure and rich surface defects is prepared, and the composite oxide electrocatalyst has the OER catalytic performance far higher than that of precious metal.

The invention provides a thickened oil adiabatic oxidation on-line test system meeting high-pressure air injection, comprising: a high-pressure injection module for obtaining a high-purity compressed air source; the adiabatic reaction module is provided with an adiabatic reaction kettle; the gas monitoring module is used for performing off-line quantitative detection and on-line qualitative detection on the gas to obtain all-component gas; the dynamic calibration module is used for constructing a calibration database and a real-time calibration algorithm and carrying out quantitative conversion on all-component gas to obtain real-time quantitative data; the intelligent prediction module is used for constructing a reaction kinetic model, automatically identifying a reaction stage and carrying out air injection rate self-adaptive control, gas sampling frequency adjustment and abnormal early warning; and the integrated control module is used for developing a human-computer interaction interface and realizing data interconnection. According to the method, the whole heavy oil oxidation process can be comprehensively simulated and monitored, the scientificity and the field applicability of theoretical research and data simulation are improved, and the information acquisition efficiency, the automatic monitoring degree, the safety and the accuracy of experiments are remarkably improved.

The invention discloses an RTO heat accumulating type incinerator, which relates to the technical field of waste gas treatment and comprises an incinerator body, an air duct, three heat accumulators and a combustion device, a heat preservation layer is arranged on the inner side of the furnace body, and a combustion chamber, three heat storage chambers and three gas collection chambers are arranged in the furnace body. An explosion venting opening is formed in the top of the furnace body; the corresponding heat storage chambers are filled with the heat storage bodies, and the furnace body is provided with a filtering device. The combustion device is arranged on one side of the furnace body; the air duct comprises a waste gas pipeline; the waste gas pipeline comprises a gas inlet pipe, a gas outlet pipe and three ventilation pipes; the top of the breather pipe is communicated with the bottom of the gas collection chamber; the two ends of the breather pipe are connected and communicated with the air inlet pipe and the air outlet pipe respectively, and butterfly valves are arranged at the two ends of the breather pipe. The use cost and the maintenance difficulty can be effectively reduced while the waste gas treatment efficiency and the effect stability are guaranteed.

The invention relates to the technical field of energy storage safety, and particularly discloses wide-temperature-range flame-retardant cooling liquid, a preparation method of the wide-temperature-range flame-retardant cooling liquid, an immersed energy storage device, a data center and electric equipment.The wide-temperature-range flame-retardant cooling liquid is introduced into the flame-retardant cooling liquid, the modifier can improve the wide-temperature-range performance of the flame-retardant cooling liquid, and the flame-retardant performance of the flame-retardant cooling liquid is improved; good applicability in extremely cold and high-temperature environments is ensured; the modifier has good breakdown resistance and thermal oxidation stability, so that the insulating property and oxidation resistance of the flame-retardant cooling liquid can be further improved; in addition, the modifier contains phosphorus element which can play a synergistic flame-retardant role with flame-retardant elements in the flame retardant, so that the flame-retardant property of the flame-retardant cooling liquid is further enhanced; meanwhile, the modifier also has good compatibility with other components in the flame-retardant cooling liquid, so that the cooling liquid can be uniformly dispersed, and the problem that the insulating property, the flame-retardant property and the wide temperature range property become poor due to system layering caused by poor compatibility is avoided.

The integrated fly ash washing skid-mounted equipment comprises a water tank, the water tank comprises a pre-dissolving bin and a flotation bin which are sequentially communicated, the pre-dissolving bin is provided with a feeding port, a baffle, a first stirrer and a second stirrer, and the flotation bin is provided with an aeration device, a third stirrer, a floating foam scraper, an overflow port, a floating foam outlet, a tail gas outlet and a discharging port. According to the equipment, incineration fly ash is washed with a high water-cement ratio, and after one-time dehydration, the content of soluble chlorine in a solid phase can be guaranteed to be within the range of 1%. In addition, by combining the hydrophobic characteristic of the activated carbon and utilizing the air flotation principle, the activated carbon is subjected to air flotation separation by aerating in the flotation bin, so that the concentration of dioxin in the fly ash can be greatly reduced; the treated fly ash can be subjected to deep decomposition of dioxin by adopting the technologies of low-temperature pyrolysis, damp-heat oxidation and the like, so that the reaction conditions of the dioxin decomposition technology can be reduced, and the comprehensive cost is lower.

Disclosed are a dielectric structure, a semiconductor device structure, and manufacturing methods therefor. The manufacturing method for the dielectric structure includes: performing Al doping to a surface of a SiC substrate to form an Al-doped SiC layer and then oxidizing the Al-doped SiC layer to form a dielectric layer including at least a SiAlO layer. On one hand, thermal oxidation temperature required for oxidizing SiC to SiO2 may be reduced, so that an interface state with a high density at an interface of SiC / SiO2 is reduced, and quality of the dielectric layer is improved. On the other hand, original Si in the SiO2 is replaced with Al, a more stable structure may be formed, and the quality of the dielectric layer is further improved.

A hydrogen gas sensor with a substrate and a zinc oxide nanostructured thin film deposited on the substrate, wherein the zinc oxide nanostructured thin film has a lattice structure with a weight ratio of low binding energy O2− ions to medium binding energy oxygen vacancies in a range of 0.1 to 1.0, and a method of fabricating a gas sensor by thermally oxidizing a metal thin film under low oxygen partial pressure. Various combinations of embodiments of the hydrogen gas sensor and the method of fabricating the gas sensor are provided.

The invention relates to a multi-energy combined ventilation air methane utilization method, and belongs to the technical field of methane treatment. In order to solve the problems that ventilation air methane with the concentration lower than 0.3% cannot be oxidized in a self-sustaining mode and a traditional technology depends on external fuel, a solar energy, wind energy and geothermal energy collaborative power supply system is adopted, and heat balance of a heat storage oxidation device is maintained in combination with an electric heating power dynamic adjustment formula. Through gradient utilization of flue gas waste heat and catalytic purification treatment, stable destruction of ventilation air methane with the concentration of 0.1% is achieved, the energy consumption of the system is reduced by 60% or above, the emission of CO is lower than 3.2 ppm, and the emission of NOx is lower than 15 mg / Nm < 3 >. The method breaks through the bottleneck of low-concentration gas treatment, is suitable for mining areas at the altitude of 4500 m or below, has the energy self-sufficiency rate of 95% or above, and is free of secondary pollution.

The present application provides a power device and a method for preparing the same. The preparation method comprises the following steps: providing a silicon substrate, forming a well region, a drift region located in the well region, and a shallow trench isolation structure located in the drift region in the silicon substrate, forming a liner isolation layer between the shallow trench isolation structure and the silicon substrate, defining an injection window on the drift region, the injection window being adjacent to the shallow trench isolation structure, and the injection window exposing the silicon substrate; performing ion implantation on the injection window in the drift region to form a destructive layer mainly composed of amorphous silicon on the surface of the silicon substrate corresponding to the injection window; performing thermal oxidation treatment on the region corresponding to the destructive layer to form a high-voltage gate oxide layer in the injection window, the high-voltage gate oxide layer being adjacent to the shallow trench isolation structure. The present application helps to avoid local breakdown of the device and can improve the electrical performance of the device.