727 results about "Single crystal silicon" patented technology

The invention relates to the technical field of optical processing, and provides a large-caliber monocrystalline silicon aspheric surface high-precision polishing method which is characterized by comprising the following steps: S10, obtaining full-caliber surface shape error distribution of a large-caliber monocrystalline silicon aspheric surface and mapping the full-caliber surface shape error distribution to a discrete grid; s20, constructing a residence time distribution optimization model and a polishing path planning optimization model, and outputting an optimal residence time distribution matrix and a polishing path sequence by taking the surface shape error parameters of the large-aperture monocrystalline silicon aspheric surface as input; s30, based on the optimal residence time distribution matrix and the polishing path sequence, the aspheric surface of the large-diameter monocrystalline silicon is polished; and S40, after each polishing cycle, the steps S10-S40 are repeated until the number of iterations is reached. According to the method, a closed-loop control method of time distribution-path planning-dynamic calibration is formed, so that the surface shape precision and efficiency of large-diameter aspheric surface polishing are remarkably improved.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention relates to the technical field of transmitters, and discloses an intelligent monocrystalline silicon pressure difference transmitter which comprises a sensor, diaphragms are arranged on the left side and the right side of the sensor, a first process flange is installed on the front side of the sensor, a second process flange is installed on the rear side of the sensor, and a machine body is fixedly connected to the upper surface of the sensor. A displayer is installed on the front side of the machine body, the sensor is electrically connected with the machine body, and an overload plugging device is arranged on the inner wall of the second process flange. The overload plugging device comprises a U-shaped guide frame, the U-shaped guide frame is installed on the inner wall of the second process flange, and the inner wall of the U-shaped guide frame is connected with a connecting rod in a sliding mode. According to the invention, through the arrangement of the overload plugging device, the interface part can be cut off when the tested pressure end of the transmitter is subjected to overlarge instantaneous pressure, so that the impact of the instantaneous pressure on the diaphragm of the tested pressure end is reduced, and the protection performance of the transmitter on the large instantaneous pressure is improved.

The invention relates to a preparation method of a silicon single crystal rod and a silicon wafer. Comprising a melting stage, a temperature adjusting stage, a welding stage, a seeding stage, a shouldering stage, an equal-diameter stage, an ending stage and a breaking stage which are carried out in sequence, in the equal-diameter stage, the pulling speed is controlled to be within a first pulling speed range, and the solid-liquid interface temperature gradient is controlled to be within a first gradient range; wherein the range of the first pulling speed ranges from 0.5 mm / min to 1.1 mm / min; the first gradient range is 3 DEG C / cm to 5 DEG C / cm. By reducing the temperature gradient of a solid-liquid interface and lowering the crystal pulling rate, the stability of a thermal field is enhanced, and sufficient conditions are provided for the composite reaction of Sii and V, so that the impurity capturing efficiency is improved, the internal purity of the crystal is improved, and the impurities are effectively removed.

This application provides a crystal growth method and crystalline silicon, relating to the field of solar photovoltaic technology. The method comprises: performing a leak test on a single crystal furnace under a first furnace pressure; adding a dopant to the single crystal furnace under a second furnace pressure; wherein the second furnace pressure is greater than the first furnace pressure; and performing a crystal pulling process after adding the dopant. This application can reduce axial concentration distribution differences of doping elements in doped single crystal silicon, improve axial resistivity uniformity of the single crystal silicon, and enhance production efficiency.

A method of fabricating an IR transparent window wafer with integrated AR grating structures includes providing a handle wafer having a first surface and a second surface opposite the first surface, providing a device wafer including a single crystal silicon layer disposed on an oxide layer, the single crystal silicon layer having a planar side and the oxide layer having a bonding side that is opposite the planar side, forming AR grating structures in a first portion of the first surface of the handle wafer, bonding the bonding side of the oxide layer to the first surface of the handle wafer, and etching a recess in the planar side of the single crystal silicon layer to: remove the buried oxide layer, form a plurality of recess walls, and expose the AR grating structures in the first portion of the first surface of the handle wafer.

The utility model relates to a bottom heater for improving the material melting efficiency of a single crystal furnace, which belongs to the technical field of a thermal field for producing single crystal silicon by a czochralski method and comprises a heating body and two foot plates which are symmetrically arranged left and right, are respectively positioned on two opposite sides of the heating body and are connected with the heating body; the heating body comprises a first heating body and a second heating body which are symmetrically arranged in the vertical direction; the middle of the foot plate extends and protrudes towards the center of the bottom heater to form an arc-shaped plate, and electrode holes are formed in the arc-shaped plate. The first heating body comprises a first heating unit, a second heating unit and a third heating unit, the first heating unit and the third heating unit are symmetrically arranged on the left side and the right side of the second heating unit, and the outer side of the first heating unit and the outer side of the third heating unit are each of a step-shaped structure. The bottom heater is simple in structure, high in heating power and uniform in heating, the occurrence rate of arcing and sparking of the bottom heater and the heat preservation cylinder caused by external factors is effectively reduced, the service life of the bottom heater is prolonged, the service life of a thermal field is prolonged, and the stability of the thermal field is improved.

A processing method for processing a single-crystal silicon wafer that has a first surface and a second surface formed in such a manner that a specific crystal plane included in a crystal plane {100} is exposed in each of the first and second surfaces and has devices formed in the respective regions marked out by planned dividing lines in the first surface. The method includes forming dividing origins along each planned dividing line, forming a separation layer along the crystal plane of the second surface through relatively moving a focal point and the wafer along a first direction that is parallel to the crystal plane of the second surface and in which an acute angle formed between the first direction and the crystal orientation <100> is equal to or smaller than 5°, and separating the wafer into a first-surface-side wafer including devices and a second-surface-side wafer including no devices.

A silicon carbide seed is provided, including a first seed layer and a second seed layer. The first seed layer includes a polycrystalline silicon carbide material. The second seed layer is directly attached to the first seed layer, where the second seed layer includes a single crystal silicon carbide material, and a thickness ratio (T2 / T1) of a thickness T1 of the first seed layer to a thickness T2 of the second seed layer is in a range of 10% to 50%.

The present invention is a substrate for a high-frequency device in which a nitride semiconductor film is formed on an SOI substrate, the SOI substrate being a TRSOI substrate in which a trap-rich layer formed on a base substrate and an SOI layer comprising single crystal silicon are bonded with an oxide film interposed therebetween, the SOI layer having a resistivity of 1 k [omega] * cm or more and a crystal plane orientation of (111). And the oxygen concentration is 14.8 ppma or less. As a result, a substrate for a high-frequency device having excellent high-frequency characteristics and a method for manufacturing the same are provided.

The invention provides a method for improving COP defects based on crystal bar temperature gradient control, and relates to the technical field of monocrystalline silicon production, the method comprises the following steps: collecting temperature distribution data of a crystal bar growth interface and surface in real time, and reading a crystal bar pulling speed in real time; calculating an instantaneous V / G value according to the temperature distribution data and the pulling speed of the crystal bar; comparing the instantaneous V / G value with a preset V / G critical value; and according to the comparison result, adjusting the inward or outward opening angle of the scales on the scale type radiation adjusting device arranged between the crystal bar and the heat shield, so as to adjust the crystal bar temperature gradient G by adjusting the heat radiation reflected to different positions of the crystal bar, and further adjust the V / G value. According to the scheme, the thermal radiation reflection path can be dynamically changed according to the actual condition of the single crystal growth stage, so that the temperature gradient distribution of the single crystal growth stage is adjusted, the V / G value is further adjusted to reduce the generation of COP defects, and the quality of the single crystal is improved.

The invention relates to the technical field of resonators, and discloses an MEMS resonator and a composite preparation method thereof.The composite preparation method of the MEMS resonator comprises the steps that a highly-doped first monocrystalline silicon layer is formed to serve as a supporting substrate; forming a piezoelectric material layer on the first monocrystalline silicon layer; forming a seed layer on the piezoelectric material layer at a first set rate, epitaxially forming a main body layer on the seed layer at a second set rate, and compounding the seed layer and the main body layer to form a highly doped second monocrystalline silicon layer; deep reactive ion etching is carried out on the laminated structure layer constructed based on the first monocrystalline silicon layer, the piezoelectric material layer and the second monocrystalline silicon layer, a resonator body, a connecting beam and an anchoring part are formed, and the resonator body is arranged in a suspended mode and connected with the anchoring part through the connecting beam. According to the invention, the electromechanical coupling efficiency and the quality factor of the MEMS resonator are improved, and the temperature stability of the MEMS resonator is ensured.

The invention belongs to the technical field of monocrystalline silicon production, and particularly relates to a single crystal furnace tail gas purification and recovery device which comprises a tail gas collecting pipe, the output end of the tail gas collecting pipe is fixedly connected with a box body, the interior of the box body is divided into a cooling cavity and two filtering cavities through a partition plate, and the two filtering cavities are symmetrically arranged; by arranging the power mechanism, the two gas inlet mechanisms and the impurity removal mechanism can be driven to operate, the two gas inlet mechanisms can input tail gas and backwashing gas into the two filter cavities correspondingly, meanwhile, the filter cavity input with the tail gas can close the connected impurity removal mechanism, and the filter cavity input with the backwashing gas can open the connected impurity removal mechanism; and the two filtering cavities can operate and work at the same time, the tail gas is alternately filtered through the two filtering cavities, therefore, the tail gas can be continuously filtered, and the tail gas recycling efficiency can be improved.

To provide a novel method for detecting dislocation that is present in a single crystal silicon specimen after a coating is formed thereto.SOLUTION: A method for detecting dislocation of a single crystal silicon specimen includes a step of detecting a part as dislocation that is observed as a bright line in an electronic channeling image that is acquired by irradiating a surface of a single crystal silicon specimen with an electron beam by a scanning electron microscope, where the irradiation with the electron beam includes a step of irradiating one or more crystal planes of the single crystal silicon specimen with the electron beam in an incidence azimuth within a range of satisfying an electronic channeling condition and the one or more crystal planes include a {220} surface.SELECTED DRAWING: None

The invention provides a crystal pulling method for improving light boron-doped crystal BMD and a silicon single crystal rod, and belongs to the technical field of silicon single crystal pulling, crystal rod pulling is carried out in a predetermined thermal field to change the temperature gradient in the thermal field and increase the interval length of the BMD nucleation temperature, and in the crystal pulling process, the BMD nucleation temperature is increased. According to the present invention, the crystal rotation, the crucible rotation and the pulling speed are adjusted so as to improve the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar, such that the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar are pre-improved so as to provide sufficient raw materials for BMD nucleation, and then the temperature gradient in the thermal field is changed so as to increase the interval length of the BMD nucleation temperature, interstitial oxygen and vacancies are promoted to generate BMD, and then the BMD defect density in the light boron-doped crystal is remarkably improved through the synergistic effect of a preset thermal field, crystal transition, crucible transition and the pulling speed.

The invention discloses a monocrystalline silicon growth furnace and a control method thereof, the monocrystalline silicon growth furnace comprises a main furnace chamber and an auxiliary furnace chamber, the main furnace chamber is communicated with the auxiliary furnace chamber, the main furnace chamber comprises a furnace cover, a furnace cylinder and a furnace bottom, the furnace cover is detachably connected with one side of the furnace cylinder, and the furnace bottom is connected with the furnace cylinder. And the furnace bottom is detachably connected with the other side of the furnace barrel. According to the monocrystalline silicon growth furnace disclosed by the invention, the furnace bottom is designed into a liftable structure and is matched with the operation platform, so that on one hand, the occupied land load is greatly reduced, on the other hand, the production operation is convenient, the production efficiency is greatly improved, the safety is high, and the equipment investment cost is reduced.

The invention belongs to the technical field of semiconductor material processing, and relates to a laser modification and low-temperature impact controllable stripping method and system for a single crystal silicon carbide wafer. The method comprises the following steps: pretreating the surface of a single crystal SiC crystal ingot to form a uniform rough surface; setting femtosecond laser initial parameters, and carrying out modification treatment in the crystal ingot to form a modified area; laser parameters are optimized through sweep-frequency optical coherence tomography and a CNN model, and optimal parameters are obtained; inducing to form a modified layer parallel to the surface in the crystal ingot by utilizing the parameters; coating a polymer on the surface of the modified layer and pre-cooling the crystal ingot; and applying a low-temperature impact load to promote the II-type crack to expand along the crystal face so as to realize controllable stripping. The method solves the problem that cracks are difficult to control in the laser stealth cutting technology.

The numerical control surface grinding, chamfering and rounding all-in-one machine comprises a machining all-in-one machine, a machining bin is formed in the upper left corner of the front end of the machining all-in-one machine, a bin door is connected to the upper side of the front end of the machining all-in-one machine in a sliding mode, and the bin door can slide to the front end of the machining bin for shielding. Storage mechanisms are arranged on the left side and the right side of the inner wall of the lower end of the machining bin correspondingly, a plurality of chamfering and rounding grooves with different inner diameters are formed in the cylindrical outer wall of a chamfering and grinding wheel, and the edge of a silicon wafer can be chamfered and rounded at different angles; chamfering rounding grooves with different inner diameters can be adjusted to be clamped at the two ends of a silicon wafer to meet different machining requirements, stretching and retracting between a clamping telescopic rod and a telescopic sliding sleeve are controlled through a hydraulic control mechanism, the clamping position and tightness can be controlled according to the radius of the silicon wafer, the chamfering rounding device is suitable for machining of the silicon wafers with different radiuses, the machining range is widened, and the machining quality is improved.

The invention discloses a PEDOT: PSS / n-Si solar cell with a MoOx multifunctional interface layer and a preparation method of the PEDOT: PSS / n-Si solar cell. Comprising the following steps: (1) preparing a photovoltaic device by adopting a monocrystalline silicon wafer; (2) adding DMSO and a surfactant Triton X-100 into the PEDOT: PSS aqueous solution, and carrying out magnetic stirring to prepare a precursor solution; (3) removing surface oxides from the n-type silicon wafer by using an HF solution; then, deionized water is used for cleaning the HF acid solution left on the silicon wafer, and finally nitrogen is used for purging and drying the silicon wafer; (4) spin-coating the PEDOT: PSS precursor solution prepared in the step (2) on the surface of the silicon wafer, and then annealing to form a film; (5) depositing a layer of MoOx film on the PEDOT: PSS film obtained in the step (4) by adopting a thermal evaporation method; (6) preparing an Ag grid line electrode on the PEDOT: PSS / MoOx thin film; and (7) depositing a layer of metal electrode on the back surface of the sample obtained in the step (6). According to the invention, Ag is in contact with MoOx to form an Ag / MoOx electrode, so that the contact potential barrier between PEDOT: PSS / Ag is reduced. The solar cell manufacturing method is simple and easy to implement, and can be used for large-scale production.

The embodiment of the invention provides a crystal doping concentration detection method and device and a silicon rod drawing method and device. The detection method comprises the following steps: acquiring the concentration of a dopant in gas on the surface of a silicon liquid, and acquiring the temperature of the surface of the silicon liquid; and determining the doping concentration of the crystal at the solid-liquid interface of the silicon liquid according to the concentration of the dopant in the gas and the temperature. In the embodiment of the invention, through real-time measurement of the doping concentration of the crystals at the solid-liquid interface, the doping proportion of the added materials can be adjusted, so that the resistivity of the head of the single crystal silicon rod is controlled within a proper range, and the yield and the resistivity concentration ratio of the single crystal silicon rod are improved.

The invention relates to a crystal pulling process optimization method, system and equipment for monocrystalline silicon, and a storage medium. The method comprises the following steps: acquiring real-time target data in a production process; the target data comprises process parameters, quality indexes and equipment states; inputting the target data into a completely trained optimization strategy model corresponding to each process step in the process flow to generate an optimization strategy; and adjusting the process parameters of the process steps based on the optimization strategy, and when the quality indexes of the process steps meet the corresponding preset quality requirements, entering the next process step until the current production batch is completed. According to the invention, optimization control is carried out according to the sequence of the process steps to adjust the process parameters, and the next process step is carried out only when the quality index of each process step meets the quality requirement, so that the optimization effect of each step can be ensured, the production quality is stably controlled, and the problems of unstable optimization effect and poor quality are solved. And the production quality is difficult to stably control.

The invention provides a monocrystalline silicon wafer cleaning system and method. The cleaning system comprises a first cleaning tank; a second washing tank; a third cleaning tank; a fourth cleaning tank; a high-pressure conveying device; the fourth cleaning tank comprises a first tank body used for containing a first cleaning solution containing a hydrogen peroxide aqueous solution, a second tank body used for containing a second cleaning solution containing the hydrogen peroxide aqueous solution and a third tank body used for containing a third cleaning solution containing the hydrogen peroxide aqueous solution. The at least one first light source is used for providing light for the first tank body, the at least one second light source is used for providing light for the third tank body, the first tank body is communicated with the second tank body through a first free radical oxidation resistant reverse osmosis membrane, and the second tank body is communicated with the third tank body through a second free radical oxidation resistant reverse osmosis membrane; at least one composite plate is arranged in each of the first groove body and the second groove body; and each composite plate comprises doped graphene, so that the problems of high cleaning cost of the monocrystalline silicon wafer and complex wastewater treatment are solved.

The invention discloses a single-crystal photovoltaic automatic doping and batching method and system based on intelligent AI, and belongs to the technical field of photovoltaic production and manufacturing. Currently, manual batching in the photovoltaic industry has the problems of inaccurate inventory, low doping precision and the like, which seriously restricts the improvement of production efficiency and product quality. The system is composed of an automatic weighing unit, a data acquisition and preprocessing module, an AI intelligent decision module, an optimization algorithm module and an execution control module. The method comprises the steps that data of a coil base, materials and the like are collected and preprocessed, then an optimal doping formula is generated through an AI intelligent decision and optimization algorithm, and finally accurate weighing, doping agent adding, stirring and mixing are conducted through the execution control module. According to the invention, the doping precision is obviously improved, the error is controlled within an extremely small range, and the quality of monocrystalline silicon is improved; the production efficiency is greatly improved, and manual intervention is reduced; the production cost is effectively reduced, and manpower and raw material waste is reduced; the product quality stability is guaranteed, the market competitiveness is enhanced, and powerful support is provided for the development of the photovoltaic industry.

The application provides a MEMS differential thermal analysis sensor and a DTA / DSC testing method, the sensor comprising a detection thermocouple, a reference thermocouple, an ambient resistance and a shielding ring, wherein the detection thermocouple and the reference thermocouple each comprise a single crystal silicon substrate, a heat insulation cavity, a plurality of single crystal silicon thermocouple pairs and a supporting film, the heat insulation cavity is located in the single crystal silicon substrate, the plurality of single crystal silicon thermocouple pairs are connected in series and are supported by the supporting film to be suspended above the heat insulation cavity to achieve thermal isolation, and the single crystal silicon thermocouple pair comprises an N-type single crystal silicon thermocouple and a P-type single crystal silicon thermocouple connected in series, the temperature and power sensitivity of the sensor are significantly improved, reach 28 mV / K and 100 V / W, and the noise equivalent temperature difference and the noise equivalent power reach 0.5 mK or 0.2 muW. Based on the output signal of the sensor, differential thermal analysis testing and differential scanning calorimetry testing on physical or chemical processes of material heat absorption and release can be realized, the sample consumption is small, and the testing precision is high.

The invention discloses a monocrystalline silicon reaction furnace for new energy automobile production, the monocrystalline silicon reaction furnace comprises a reaction furnace, the top of the reaction furnace is fixedly provided with a crystal lifter, and the outer surface of the reaction furnace is fixedly connected with a second feed pipe; the drying mechanism is used for drying the monocrystalline silicon raw material; the drying mechanism comprises a heat preservation cover, the heat preservation cover is fixedly installed on the outer surface of the reaction furnace, the top of the heat preservation cover is fixedly connected with a second water pipe, one end of the second water pipe is fixedly connected with a purification box, the purification box is in through connection with an inner cavity of the reaction furnace, and the top of the purification box is fixedly connected with a first heat preservation pipe; a second thermal insulation pipe is fixedly mounted on the outer surface of the first thermal insulation pipe; a monocrystalline silicon raw material in an inner cavity of a cleaning hopper flows into a feeding hopper and enters an inner cavity of a third feeding pipe and an inner cavity of a second feeding pipe by opening a valve, is finally driven by an output shaft of a first motor to rotate along with an auger, is conveyed to an inner cavity of a reaction furnace, and is heated again when passing through the inner cavity of the second feeding pipe.

The utility model provides a heat radiation device used for a laser and a laser module comprising the heat radiation device, in one embodiment, the heat radiation device comprises a laser gain medium having a first surface and a second surface; the antireflection film is arranged on the first surface of the laser crystal; the reflecting film is arranged on the second surface of the laser crystal; and the heat sink is used for supporting and fixing the laser gain medium and absorbing heat generated by the laser gain medium, and the heat sink is made of single crystal silicon carbide. The heat dissipation device provided by the utility model is low in processing cost, and facilitates the popularization and application of the disc laser.

The invention provides a heat insulation device and a silicon rod growth system, and the heat insulation device is applied to a growth furnace and comprises a heat insulation assembly arranged in the growth furnace; the position adjusting assembly is connected with the heat insulation assembly and used for adjusting the position of the heat insulation assembly on the first plane; the lifting assembly is connected with the heat insulation assembly and used for driving the heat insulation assembly to ascend and descend in the first direction, and the first direction intersects with the first plane. Through cooperation of the heat insulation assembly, the position adjusting assembly and the lifting assembly, the heat insulation function of the heat insulation assembly can be started in the melting stage of preparing the silicon rod, so that outward heat radiation of heat in the growth furnace is blocked through the heat insulation assembly, and the heat field heat preservation performance in the growth furnace is improved to reduce heat loss; the material melting efficiency in the material melting stage is further improved; in the non-melting stage of preparing the silicon rod, the heat insulation function of the heat insulation device can be closed, so that the normal growth of the silicon single crystal rod is not influenced, and the service life of the whole heat insulation device is prolonged.

The invention belongs to the technical field of semiconductor material detection, and provides a single crystal silicon rod defect detection method which comprises the following steps: controlling a clamping and overturning module to clamp and fix two end surfaces of a single crystal silicon rod; controlling the end face detection module to collect and analyze at least one end face image, and outputting a first detection result about whether the end face is defective; controlling the single crystal silicon rod to continuously rotate around a central shaft, synchronously scanning and shooting the first half side surface, and obtaining a first half side surface panoramic image; the clamping and overturning module is controlled to loosen and overturn the single crystal silicon rod by 180 degrees and then clamp the single crystal silicon rod again, the reference position of the side surface is detected through a laser displacement sensor, and the circumferential angle is finely adjusted based on the detection result to complete pose calibration; s3 is repeated to obtain a second half-side panoramic image connected with the first half-side panoramic image; and splicing the two panoramic images based on the pose calibration result, synthesizing and analyzing a side panoramic image, and outputting a second detection result about whether the side is defective or not. According to the invention, the automation degree and the detection precision of single crystal silicon rod defect detection are improved.

The invention provides an epitaxial wafer, a preparation method thereof and a power device. The epitaxial wafer comprises a composite substrate and an epitaxial layer located on the composite substrate, wherein the composite substrate comprises a polycrystalline layer and a single crystal silicon carbide layer located on the polycrystalline layer; the epitaxial index K of the epitaxial wafer is N1. 5 * d single crystal * rho2 composition, and K is more than or equal to 0 and less than or equal to 5 * 10 <-7 > omega; n is the defect density of the epitaxial layer, and the unit is cm <-2 >; d single crystal is the thickness of the single crystal silicon carbide layer, and the unit is [mu] m; rho is the resistivity of the composite substrate, and the unit is m omega.cm. The on-resistance of a power device made of the epitaxial wafer is low.

The application belongs to the technical field of single crystal silicon wafer degumming, in particular to a single crystal silicon wafer degumming device, which comprises a machine body for containing degumming liquid and a plurality of supporting assemblies for supporting single crystal silicon wafers, and further comprises: a bracket slidingly installed in the machine body, the bracket being used for placing a wafer holder; two telescopic rods symmetrically installed in the machine body, the supporting assemblies being installed on the telescopic rods, and the supporting assemblies comprising: a No.1 half ring plate fixedly installed on the telescopic rod; a connecting plate fixedly installed on the No.1 half ring plate; and a wiping block installed on the No.1 half ring plate, the wiping block comprising a fixed plate and a sponge block, the sponge block being installed on the fixed plate on the side close to the silicon wafer; by arranging the sponge block, the problem that the glue flows to the surface of the silicon wafer in the softening process is avoided; since there is an adhesive force between the silicon wafer and the glue, compared with the glue flowing to the surface of the silicon wafer, this mode reduces the influence of the adhesive force between the silicon wafer and the glue, and can accelerate the degumming efficiency of the wafer holder and the silicon wafer.