533 results about "Single crystal silicon" patented technology

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention relates to the technical field of transmitters, and discloses an intelligent monocrystalline silicon pressure difference transmitter which comprises a sensor, diaphragms are arranged on the left side and the right side of the sensor, a first process flange is installed on the front side of the sensor, a second process flange is installed on the rear side of the sensor, and a machine body is fixedly connected to the upper surface of the sensor. A displayer is installed on the front side of the machine body, the sensor is electrically connected with the machine body, and an overload plugging device is arranged on the inner wall of the second process flange. The overload plugging device comprises a U-shaped guide frame, the U-shaped guide frame is installed on the inner wall of the second process flange, and the inner wall of the U-shaped guide frame is connected with a connecting rod in a sliding mode. According to the invention, through the arrangement of the overload plugging device, the interface part can be cut off when the tested pressure end of the transmitter is subjected to overlarge instantaneous pressure, so that the impact of the instantaneous pressure on the diaphragm of the tested pressure end is reduced, and the protection performance of the transmitter on the large instantaneous pressure is improved.

The invention relates to a preparation method of a silicon single crystal rod and a silicon wafer. Comprising a melting stage, a temperature adjusting stage, a welding stage, a seeding stage, a shouldering stage, an equal-diameter stage, an ending stage and a breaking stage which are carried out in sequence, in the equal-diameter stage, the pulling speed is controlled to be within a first pulling speed range, and the solid-liquid interface temperature gradient is controlled to be within a first gradient range; wherein the range of the first pulling speed ranges from 0.5 mm / min to 1.1 mm / min; the first gradient range is 3 DEG C / cm to 5 DEG C / cm. By reducing the temperature gradient of a solid-liquid interface and lowering the crystal pulling rate, the stability of a thermal field is enhanced, and sufficient conditions are provided for the composite reaction of Sii and V, so that the impurity capturing efficiency is improved, the internal purity of the crystal is improved, and the impurities are effectively removed.

This application provides a crystal growth method and crystalline silicon, relating to the field of solar photovoltaic technology. The method comprises: performing a leak test on a single crystal furnace under a first furnace pressure; adding a dopant to the single crystal furnace under a second furnace pressure; wherein the second furnace pressure is greater than the first furnace pressure; and performing a crystal pulling process after adding the dopant. This application can reduce axial concentration distribution differences of doping elements in doped single crystal silicon, improve axial resistivity uniformity of the single crystal silicon, and enhance production efficiency.

The invention provides a method for improving COP defects based on crystal bar temperature gradient control, and relates to the technical field of monocrystalline silicon production, the method comprises the following steps: collecting temperature distribution data of a crystal bar growth interface and surface in real time, and reading a crystal bar pulling speed in real time; calculating an instantaneous V / G value according to the temperature distribution data and the pulling speed of the crystal bar; comparing the instantaneous V / G value with a preset V / G critical value; and according to the comparison result, adjusting the inward or outward opening angle of the scales on the scale type radiation adjusting device arranged between the crystal bar and the heat shield, so as to adjust the crystal bar temperature gradient G by adjusting the heat radiation reflected to different positions of the crystal bar, and further adjust the V / G value. According to the scheme, the thermal radiation reflection path can be dynamically changed according to the actual condition of the single crystal growth stage, so that the temperature gradient distribution of the single crystal growth stage is adjusted, the V / G value is further adjusted to reduce the generation of COP defects, and the quality of the single crystal is improved.

The invention belongs to the technical field of monocrystalline silicon production, and particularly relates to a single crystal furnace tail gas purification and recovery device which comprises a tail gas collecting pipe, the output end of the tail gas collecting pipe is fixedly connected with a box body, the interior of the box body is divided into a cooling cavity and two filtering cavities through a partition plate, and the two filtering cavities are symmetrically arranged; by arranging the power mechanism, the two gas inlet mechanisms and the impurity removal mechanism can be driven to operate, the two gas inlet mechanisms can input tail gas and backwashing gas into the two filter cavities correspondingly, meanwhile, the filter cavity input with the tail gas can close the connected impurity removal mechanism, and the filter cavity input with the backwashing gas can open the connected impurity removal mechanism; and the two filtering cavities can operate and work at the same time, the tail gas is alternately filtered through the two filtering cavities, therefore, the tail gas can be continuously filtered, and the tail gas recycling efficiency can be improved.

The invention provides a crystal pulling method for improving light boron-doped crystal BMD and a silicon single crystal rod, and belongs to the technical field of silicon single crystal pulling, crystal rod pulling is carried out in a predetermined thermal field to change the temperature gradient in the thermal field and increase the interval length of the BMD nucleation temperature, and in the crystal pulling process, the BMD nucleation temperature is increased. According to the present invention, the crystal rotation, the crucible rotation and the pulling speed are adjusted so as to improve the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar, such that the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar are pre-improved so as to provide sufficient raw materials for BMD nucleation, and then the temperature gradient in the thermal field is changed so as to increase the interval length of the BMD nucleation temperature, interstitial oxygen and vacancies are promoted to generate BMD, and then the BMD defect density in the light boron-doped crystal is remarkably improved through the synergistic effect of a preset thermal field, crystal transition, crucible transition and the pulling speed.

The invention belongs to the technical field of semiconductor material processing, and relates to a laser modification and low-temperature impact controllable stripping method and system for a single crystal silicon carbide wafer. The method comprises the following steps: pretreating the surface of a single crystal SiC crystal ingot to form a uniform rough surface; setting femtosecond laser initial parameters, and carrying out modification treatment in the crystal ingot to form a modified area; laser parameters are optimized through sweep-frequency optical coherence tomography and a CNN model, and optimal parameters are obtained; inducing to form a modified layer parallel to the surface in the crystal ingot by utilizing the parameters; coating a polymer on the surface of the modified layer and pre-cooling the crystal ingot; and applying a low-temperature impact load to promote the II-type crack to expand along the crystal face so as to realize controllable stripping. The method solves the problem that cracks are difficult to control in the laser stealth cutting technology.

The numerical control surface grinding, chamfering and rounding all-in-one machine comprises a machining all-in-one machine, a machining bin is formed in the upper left corner of the front end of the machining all-in-one machine, a bin door is connected to the upper side of the front end of the machining all-in-one machine in a sliding mode, and the bin door can slide to the front end of the machining bin for shielding. Storage mechanisms are arranged on the left side and the right side of the inner wall of the lower end of the machining bin correspondingly, a plurality of chamfering and rounding grooves with different inner diameters are formed in the cylindrical outer wall of a chamfering and grinding wheel, and the edge of a silicon wafer can be chamfered and rounded at different angles; chamfering rounding grooves with different inner diameters can be adjusted to be clamped at the two ends of a silicon wafer to meet different machining requirements, stretching and retracting between a clamping telescopic rod and a telescopic sliding sleeve are controlled through a hydraulic control mechanism, the clamping position and tightness can be controlled according to the radius of the silicon wafer, the chamfering rounding device is suitable for machining of the silicon wafers with different radiuses, the machining range is widened, and the machining quality is improved.

The application provides a MEMS differential thermal analysis sensor and a DTA / DSC testing method, the sensor comprising a detection thermocouple, a reference thermocouple, an ambient resistance and a shielding ring, wherein the detection thermocouple and the reference thermocouple each comprise a single crystal silicon substrate, a heat insulation cavity, a plurality of single crystal silicon thermocouple pairs and a supporting film, the heat insulation cavity is located in the single crystal silicon substrate, the plurality of single crystal silicon thermocouple pairs are connected in series and are supported by the supporting film to be suspended above the heat insulation cavity to achieve thermal isolation, and the single crystal silicon thermocouple pair comprises an N-type single crystal silicon thermocouple and a P-type single crystal silicon thermocouple connected in series, the temperature and power sensitivity of the sensor are significantly improved, reach 28 mV / K and 100 V / W, and the noise equivalent temperature difference and the noise equivalent power reach 0.5 mK or 0.2 muW. Based on the output signal of the sensor, differential thermal analysis testing and differential scanning calorimetry testing on physical or chemical processes of material heat absorption and release can be realized, the sample consumption is small, and the testing precision is high.

The invention discloses a monocrystalline silicon reaction furnace for new energy automobile production, the monocrystalline silicon reaction furnace comprises a reaction furnace, the top of the reaction furnace is fixedly provided with a crystal lifter, and the outer surface of the reaction furnace is fixedly connected with a second feed pipe; the drying mechanism is used for drying the monocrystalline silicon raw material; the drying mechanism comprises a heat preservation cover, the heat preservation cover is fixedly installed on the outer surface of the reaction furnace, the top of the heat preservation cover is fixedly connected with a second water pipe, one end of the second water pipe is fixedly connected with a purification box, the purification box is in through connection with an inner cavity of the reaction furnace, and the top of the purification box is fixedly connected with a first heat preservation pipe; a second thermal insulation pipe is fixedly mounted on the outer surface of the first thermal insulation pipe; a monocrystalline silicon raw material in an inner cavity of a cleaning hopper flows into a feeding hopper and enters an inner cavity of a third feeding pipe and an inner cavity of a second feeding pipe by opening a valve, is finally driven by an output shaft of a first motor to rotate along with an auger, is conveyed to an inner cavity of a reaction furnace, and is heated again when passing through the inner cavity of the second feeding pipe.

The utility model provides a heat radiation device used for a laser and a laser module comprising the heat radiation device, in one embodiment, the heat radiation device comprises a laser gain medium having a first surface and a second surface; the antireflection film is arranged on the first surface of the laser crystal; the reflecting film is arranged on the second surface of the laser crystal; and the heat sink is used for supporting and fixing the laser gain medium and absorbing heat generated by the laser gain medium, and the heat sink is made of single crystal silicon carbide. The heat dissipation device provided by the utility model is low in processing cost, and facilitates the popularization and application of the disc laser.

The invention belongs to the technical field of semiconductor material detection, and provides a single crystal silicon rod defect detection method which comprises the following steps: controlling a clamping and overturning module to clamp and fix two end surfaces of a single crystal silicon rod; controlling the end face detection module to collect and analyze at least one end face image, and outputting a first detection result about whether the end face is defective; controlling the single crystal silicon rod to continuously rotate around a central shaft, synchronously scanning and shooting the first half side surface, and obtaining a first half side surface panoramic image; the clamping and overturning module is controlled to loosen and overturn the single crystal silicon rod by 180 degrees and then clamp the single crystal silicon rod again, the reference position of the side surface is detected through a laser displacement sensor, and the circumferential angle is finely adjusted based on the detection result to complete pose calibration; s3 is repeated to obtain a second half-side panoramic image connected with the first half-side panoramic image; and splicing the two panoramic images based on the pose calibration result, synthesizing and analyzing a side panoramic image, and outputting a second detection result about whether the side is defective or not. According to the invention, the automation degree and the detection precision of single crystal silicon rod defect detection are improved.

The application belongs to the technical field of single crystal silicon wafer degumming, in particular to a single crystal silicon wafer degumming device, which comprises a machine body for containing degumming liquid and a plurality of supporting assemblies for supporting single crystal silicon wafers, and further comprises: a bracket slidingly installed in the machine body, the bracket being used for placing a wafer holder; two telescopic rods symmetrically installed in the machine body, the supporting assemblies being installed on the telescopic rods, and the supporting assemblies comprising: a No.1 half ring plate fixedly installed on the telescopic rod; a connecting plate fixedly installed on the No.1 half ring plate; and a wiping block installed on the No.1 half ring plate, the wiping block comprising a fixed plate and a sponge block, the sponge block being installed on the fixed plate on the side close to the silicon wafer; by arranging the sponge block, the problem that the glue flows to the surface of the silicon wafer in the softening process is avoided; since there is an adhesive force between the silicon wafer and the glue, compared with the glue flowing to the surface of the silicon wafer, this mode reduces the influence of the adhesive force between the silicon wafer and the glue, and can accelerate the degumming efficiency of the wafer holder and the silicon wafer.

The invention relates to the technical field of monocrystalline silicon manufacturing, in particular to a method for reducing crystal pulling power consumption of a single crystal furnace, which comprises the following steps: filling a cavity of the single crystal furnace with oxygen; an evacuating device at the bottom of the single crystal furnace is used for evacuating a cavity of the single crystal furnace, and a negative pressure state is formed in the cavity; after the single crystal furnace reaches vacuum, stopping the vacuumizing process, and performing leak detection on the cavity of the single crystal furnace by using an isolating valve; after leakage detection is completed, the single crystal furnace is filled with heat preservation gas; the heat preservation gas flows out through the gas guide hole 1 after passing through the heat preservation part in the circulation process. The cavity is formed in the furnace bottom and filled with the heat preservation gas, the filling gas replaces a traditional curing felt to serve as a heat preservation material, the heat preservation effect is better, pulverization is avoided, and the service life is longer. The bottom supporting point of the furnace bottom supporting device is made of a ceramic material, the strength of the ceramic supporting material is higher, and the problem that the crystal pulling quality is affected due to the fact that the strength of a traditional curing felt is reduced and the device cover distance is reduced in the high-temperature operation process of the single crystal furnace can be solved.

The invention discloses a method for preparing a silicon epitaxial wafer from a heavily-doped silicon single crystal substrate and a formed epitaxial wafer, and the method comprises the steps: taking a carbon-oxygen co-doped boron or phosphorus heavily-doped czochralski silicon wafer as a substrate, carrying out epitaxial high-temperature hydrogen pretreatment, heating to an epitaxial temperature, and further growing an epitaxial layer to prepare a high-quality silicon epitaxial wafer. In the high-temperature hydrogen pretreatment step, the temperature is increased to 1200-1250 DEG C at the speed of 40-60 DEG C / s, the temperature is kept for 150-300 s, then the temperature is reduced to 600-800 DEG C at the speed of 20-50 DEG C / s, and the temperature is kept for 30-120 s. The silicon epitaxial wafer prepared by the invention can form a certain width of high-density carbon-promoted carbon-oxygen co-precipitation induced stacking fault in a clean area on the surface layer of the substrate after being subjected to a device hot working process, has the characteristic of absorbing from gaps to inhibit boron or phosphorus from diffusing outwards, and can obtain a device with stable pressure resistance and strong gettering capability.

The invention discloses a method, a device, equipment and a medium for controlling a Czochralski process, and belongs to the field of Czochralski. Observation variables in the single crystal straight pulling process are obtained and comprise the bright ring outer ring radius, the melt mass and the liquid opening distance. Then, based on a state space model, according to the observation variables, the internal state of the single crystal straight pulling process is estimated, and estimation variables including the estimated crystal radius and the estimated meniscus height are obtained; and then taking the estimated variable as an initial state, determining a predicted change track of an internal state based on a state space model, and generating and executing a control instruction based on the predicted change track by taking a target crystal radius and a target meniscus height as control targets. According to the scheme, through multi-variable collaborative estimation and predictive optimization, the problems that variables are strongly coupled, the internal state cannot be directly measured, control lags and the like in the czochralski single crystal growth process are solved, technical support is provided for preparing high-quality large-size single crystal silicon, and the crystal diameter control precision is improved.

The invention provides a method for reducing OSF of large-size Czochralski monocrystalline silicon, and relates to the technical field of large-size Czochralski monocrystalline silicon. In the crystal pulling process, the rotating speed of a crucible and the reduction amplitude of heating power are reduced in the later stage of shouldering, so that a set vacancy type point defect area is formed in advance, and the OSF of the large-size Czochralski monocrystalline silicon is reduced; increasing the rotating speed of the crucible and increasing the reduction amplitude of heating power in the equal-diameter earlier stage; in the later stage of shouldering, dynamic switching from'low crucible rotation + vacancy type 'to'high crucible rotation + low power' in the earlier stage of equal diameter is carried out, so that vacancy type point defects are driven to move towards a V / I boundary (namely the area where an OSF ring is located) or even from the gap type side, and a clean area without an OSF nucleus is formed in a crystal.

The invention discloses an HJT solar cell based on a metal grid copper electrode, which comprises an N-type monocrystalline silicon substrate, the front surface and the back surface of the N-type monocrystalline silicon substrate are respectively textured, an I-type amorphous silicon layer and a P-type amorphous silicon layer are sequentially laminated on the front surface of the N-type monocrystalline silicon substrate, and an I-type amorphous silicon layer and an N-type amorphous silicon layer are sequentially laminated on the back surface of the N-type monocrystalline silicon substrate; the surface of the P-type amorphous silicon layer and the surface of the N-type amorphous silicon layer are both covered with transparent conductive oxide layers, the transparent conductive oxide layers are coated with transparent conductive colloid layers, the transparent conductive colloid layers comprise transparent resin binders and conductive substances dispersed in the transparent resin binders, and metal grid copper electrodes are arranged on the transparent conductive colloid layers; through precise design of the line width and the spacing of the metal grid copper electrode, the shading rate can be reduced to the maximum extent while low square resistance and efficient current collection can be ensured, and the requirements of scenes such as building integrated photovoltaic and the like for high-light-transmittance and low-resistance electrodes are met.

The invention relates to the technical field of solar cell manufacturing, provides a pyramid suede structure suitable for a perovskite crystalline silicon laminated cell and a preparation method of the pyramid suede structure, and solves the problems that an existing suede structure is low in light capture efficiency and poor in surface morphology consistency. The method comprises the following steps: selecting a (100) crystal orientation monocrystalline silicon wafer for cleaning treatment; preparing a down solution from a plurality of components including boron-containing ammonium hydroxide, sodium hydroxide, sodium silicate, isopropanol, polyethylene glycol, sodium citrate and the like; uniform nucleation points are formed through chemical pre-etching and beta-cyclodextrin surface modification; wherein the boron-containing ammonium hydroxide is prepared by reacting boric acid with ammonia gas under an alkaline condition. The prepared pyramid suede structure is composed of tetrahedral pyramid units which are regularly arranged. The method is stable in process and good in reproducibility, and the prepared textured structure has excellent light capture efficiency and surface consistency and is suitable for manufacturing efficient perovskite crystalline silicon laminated cells.

The present invention relates to the field of semiconductor manufacturing technology, and specifically to a single crystal silicon sample etching device, comprising a chemical reactor, a chemical reaction tank provided on one side of the chemical reactor, a fixture provided above the chemical reaction tank, a control mechanism provided on the chemical reactor for controlling the raising and lowering of the fixture, two rotating rods provided on the fixture for circumferential rotation or axial sliding, and a plurality of supports for placing crystals mounted on the outer surfaces of the two rotating rods. The beneficial effects of the present invention are as follows: utilizing the two rotating rods to control a plurality of crystals to simultaneously swing back and forth and slide back and forth, firstly, facilitating the accurate placement or removal of crystals, and secondly, greatly increasing the contact area and frequency between the crystal surface and the chemical etchant, thereby allowing two adjacent crystals to press liquid toward each other, accelerating the etching rate, and also promoting the automatic detachment of small bubbles attached to the crystal surface.

The utility model discloses an integrated two -dimensional optical fiber array module, include: fixed base, be equipped with the assembly recess on the fixed base, the optical fiber fixed base piece of card embedding fixed in the assembly recess, the optical fiber fixed base piece is made by glass material and adopts laser processing, be equipped with a plurality of through arrangement and array distribution's optical fiber fixed hole on the optical fiber fixed base piece, and the one side of optical fiber fixed hole is equipped with the guide mouth, and, optical fiber group, optical fiber group includes a plurality of optical fiber bundles, and the front end of optical fiber bundle is from the guide mouth and enters the optical fiber fixed hole, and fills with the glue solid layer in the guide mouth and the optical fiber fixed hole to fix optical fiber bundle, by adopting the optical fiber fixed base piece made of glass material to replace the multilayer single crystal silicon base piece, on one hand manufacturing cost project, and the processing assembly process is simpler, and thus production efficiency is higher, on the other hand can eliminate multilayer single crystal silicon base piece after assembling and appear corresponding precision error, has improved the optical fiber direction precision.

The invention discloses optical detection equipment based on production and processing of semiconductor electronic components, and relates to the technical field of optical detection of silicon single crystal rods, the optical detection equipment comprises a control cabinet, and two supporting plates are fixed at the top of the control cabinet; the single crystal silicon rod rotating mechanism is connected with the supporting plate; the anti-reflection sheet is driven by the anti-reflection mechanism to move downwards, the anti-reflection sheet is bent to wrap the top and is attached to reduce light reflection, the quality and accuracy of optical detection photos are improved, the push rod motor pushes the supporting frame to move downwards, the first sphere, the second sphere, the rod body and the connecting block are driven to move downwards, the center of the anti-reflection sheet is limited, the edge of the anti-reflection sheet forms an arc shape, and the connecting block and other structures are pulled to incline. Due to the design, hard pulling is avoided, and the device is suitable for single crystal silicon rods with different sizes; the anti-reflection piece cleaning mechanism controls a second motor to drive a gear to rotate reversely, a second one-way gear drives a second reciprocating screw to rotate and drives a fourth sliding block and a scraper to move horizontally, the scraper cleans impurities at the bottom of an anti-reflection piece, and the detection precision is prevented from being affected.

The invention discloses a fragmentation method for a composite silicon carbide substrate. The fragmentation method comprises the following steps: 1) combining a single crystal silicon carbide crystal ingot with a substrate layer; 2) performing internal modification processing on the single crystal silicon carbide crystal ingot by using laser, forming a modification processing layer in the single crystal silicon carbide crystal ingot, and enabling the incident surface of the laser to deviate from the substrate layer; 3) separating the single crystal silicon carbide crystal ingot along the modified processing layer to obtain a residual single crystal silicon carbide crystal ingot and a composite layer with a substrate layer and a single crystal silicon carbide layer; (4) repeating the steps (1)-(3) on the residual single crystal silicon carbide crystal ingot; wherein the sequence of the step 1) and the step 2) can be exchanged. The problems that in the prior art, saw bite loss is large, surface damage is obvious, and wire saw wire loss is large can be solved through the laser fragmentation technology; the utilization rate of the single crystal silicon carbide is improved by utilizing the substrate layer, structural support is provided for the single crystal silicon carbide layer, and subsequent processing of the single crystal silicon carbide layer is facilitated.

The utility model provides a protective disc tablet and a single crystal furnace, and relates to the technical field of single crystal silicon production. The protection disc pressing piece comprises a plurality of pressing piece split bodies which are circumferentially spliced. Target surfaces are arranged on the two circumferential sides of the tablet split body; the target surface is provided with a first concave part and a second concave part; the target surfaces of every two adjacent pressing piece split bodies are arranged in an attached mode, the first concave parts of every two adjacent pressing piece split bodies define a first stepped hole, the second concave parts of every two adjacent pressing piece split bodies define a second stepped hole, and the second stepped holes communicate with the first stepped holes; the cross sectional area of the first stepped hole is larger than that of the second stepped hole, and the second stepped hole is located in the side, close to the soft sticky piece, of the pressing piece split body. According to the protection disc pressing piece, the influence range of airflow can be limited in a relatively small area, and the situation that soft adhesive is blown up in a large area is avoided; meanwhile, the possibility that the soft adhesive is blown up under the action of airflow can be reduced, the cleanliness in the single crystal furnace is ensured, and the growth quality of single crystals is further improved.

The invention discloses a single crystal silicon rod slicing device, and relates to the technical field of single crystal silicon processing, the single crystal silicon rod slicing device comprises a processing base, a supporting table, a silicon rod placing rack and a linkage cutting assembly, the supporting table is installed on the processing base through a first supporting stand column, and the silicon rod placing rack is arranged on the top of the supporting table through a second supporting stand column; the linkage cutting assembly and the U-shaped support are installed on the table top of the supporting table. The core of the device is that when the linkage cutting assembly drives the single crystal silicon rod to move quantitatively, the diamond cutting line completes slicing synchronously, and the cut silicon wafer falls off through the discharging channel and falls into the discharging water tank after being buffered by the rubber rod on the driving disc. According to the device, cyclic operation is achieved through precise transmission of the bevel gear, the belt pulley, the gear and the rack in cooperation with the elastic reset mechanism, the structure is simplified, the slicing efficiency and continuity are improved, the thickness uniformity and edge integrity of the silicon wafer are guaranteed, the breakage rate is reduced, machining parameters can be adjusted by replacing the corresponding gear, environment friendliness and adaptability are both considered, and practicability is high.

The invention discloses a silicon single crystal rod and a preparation method thereof, a silicon wafer and a solar cell, and belongs to the technical field of photovoltaic module preparation. The single crystal silicon rod contains an antimony element and a hydrogen element, the doping concentration of the antimony element in the single crystal silicon rod is Ca, the doping concentration of the hydrogen element in the single crystal silicon rod is Cb, and Ca / Cb is greater than or equal to 1E <-3 > and less than or equal to 4E + 2. According to the silicon single crystal rod provided by the invention, the antimony and the hydrogen are doped at the same time, and the effective segregation coefficient of the antimony in the crystalline silicon is improved through the interaction of the hydrogen and the antimony, so that the resistivity change uniformity of the silicon single crystal rod is improved, the oxygen content of the silicon single crystal rod is improved, the service life of the silicon single crystal rod is prolonged, and the resistivity is accurately controlled; the resistivity of the monocrystalline silicon rod and the derivative product thereof is more uniform and concentrated, and the performance and the production efficiency of the czochralski monocrystalline silicon and the battery can be effectively improved.

The invention relates to the technical field of monocrystalline silicon production. The invention provides a shouldering control method for single crystal silicon production based on a czochralski method in order to solve the problems that in the prior art, detection hysteresis exists, and a shouldering opening cannot be pre-judged in advance. According to the method, a prediction model is trained based on static process data and dynamic process data, and then the opening moment and the opening size of the shouldering are predicted by using the trained prediction model. Static process data and dynamic process data are analyzed through a prediction model, an advanced prediction mechanism is achieved, predicted values of the shouldering splitting time and the opening size are given before shouldering opening, the process can be adjusted in time, the unstable condition in the shouldering process is solved, and the detection hysteresis quality is improved. The production stability and the process matching are ensured; manual intervention can be reduced, the technology is intervened in advance according to the prediction result, and frequent adjustment of technological parameters by technologists can be reduced.

Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.

A quartz glass crucible for growing a single crystal silicon ingot by a CZ method, where the crucible has a closed-end cylindrical shape including a cylindrical straight body portion, a first curved portion continuous with a lower end of the straight body portion and having a first curvature radius R1, a second curved portion continuous with the first and having a second curvature radius R2, and a bottom portion continuous with second curved portion, R1 and R2 have a relationship of R1<R2, and an outer surface of the bottom portion forms a flat surface perpendicular to a central axis of the crucible or a concave surface concave with respect to the flat surface. This provides a closed-end cylindrical quartz glass crucible for growing a single crystal silicon ingot by a CZ method that can be stable and self-supporting when it is disposed inside a closed-end cylindrical graphite crucible.