421 results about "Single crystal silicon" patented technology

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention relates to a preparation method of a silicon single crystal rod and a silicon wafer. Comprising a melting stage, a temperature adjusting stage, a welding stage, a seeding stage, a shouldering stage, an equal-diameter stage, an ending stage and a breaking stage which are carried out in sequence, in the equal-diameter stage, the pulling speed is controlled to be within a first pulling speed range, and the solid-liquid interface temperature gradient is controlled to be within a first gradient range; wherein the range of the first pulling speed ranges from 0.5 mm / min to 1.1 mm / min; the first gradient range is 3 DEG C / cm to 5 DEG C / cm. By reducing the temperature gradient of a solid-liquid interface and lowering the crystal pulling rate, the stability of a thermal field is enhanced, and sufficient conditions are provided for the composite reaction of Sii and V, so that the impurity capturing efficiency is improved, the internal purity of the crystal is improved, and the impurities are effectively removed.

The invention belongs to the technical field of monocrystalline silicon production, and particularly relates to a single crystal furnace tail gas purification and recovery device which comprises a tail gas collecting pipe, the output end of the tail gas collecting pipe is fixedly connected with a box body, the interior of the box body is divided into a cooling cavity and two filtering cavities through a partition plate, and the two filtering cavities are symmetrically arranged; by arranging the power mechanism, the two gas inlet mechanisms and the impurity removal mechanism can be driven to operate, the two gas inlet mechanisms can input tail gas and backwashing gas into the two filter cavities correspondingly, meanwhile, the filter cavity input with the tail gas can close the connected impurity removal mechanism, and the filter cavity input with the backwashing gas can open the connected impurity removal mechanism; and the two filtering cavities can operate and work at the same time, the tail gas is alternately filtered through the two filtering cavities, therefore, the tail gas can be continuously filtered, and the tail gas recycling efficiency can be improved.

The invention provides a crystal pulling method for improving light boron-doped crystal BMD and a silicon single crystal rod, and belongs to the technical field of silicon single crystal pulling, crystal rod pulling is carried out in a predetermined thermal field to change the temperature gradient in the thermal field and increase the interval length of the BMD nucleation temperature, and in the crystal pulling process, the BMD nucleation temperature is increased. According to the present invention, the crystal rotation, the crucible rotation and the pulling speed are adjusted so as to improve the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar, such that the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar are pre-improved so as to provide sufficient raw materials for BMD nucleation, and then the temperature gradient in the thermal field is changed so as to increase the interval length of the BMD nucleation temperature, interstitial oxygen and vacancies are promoted to generate BMD, and then the BMD defect density in the light boron-doped crystal is remarkably improved through the synergistic effect of a preset thermal field, crystal transition, crucible transition and the pulling speed.

The invention belongs to the technical field of semiconductor material processing, and relates to a laser modification and low-temperature impact controllable stripping method and system for a single crystal silicon carbide wafer. The method comprises the following steps: pretreating the surface of a single crystal SiC crystal ingot to form a uniform rough surface; setting femtosecond laser initial parameters, and carrying out modification treatment in the crystal ingot to form a modified area; laser parameters are optimized through sweep-frequency optical coherence tomography and a CNN model, and optimal parameters are obtained; inducing to form a modified layer parallel to the surface in the crystal ingot by utilizing the parameters; coating a polymer on the surface of the modified layer and pre-cooling the crystal ingot; and applying a low-temperature impact load to promote the II-type crack to expand along the crystal face so as to realize controllable stripping. The method solves the problem that cracks are difficult to control in the laser stealth cutting technology.

The numerical control surface grinding, chamfering and rounding all-in-one machine comprises a machining all-in-one machine, a machining bin is formed in the upper left corner of the front end of the machining all-in-one machine, a bin door is connected to the upper side of the front end of the machining all-in-one machine in a sliding mode, and the bin door can slide to the front end of the machining bin for shielding. Storage mechanisms are arranged on the left side and the right side of the inner wall of the lower end of the machining bin correspondingly, a plurality of chamfering and rounding grooves with different inner diameters are formed in the cylindrical outer wall of a chamfering and grinding wheel, and the edge of a silicon wafer can be chamfered and rounded at different angles; chamfering rounding grooves with different inner diameters can be adjusted to be clamped at the two ends of a silicon wafer to meet different machining requirements, stretching and retracting between a clamping telescopic rod and a telescopic sliding sleeve are controlled through a hydraulic control mechanism, the clamping position and tightness can be controlled according to the radius of the silicon wafer, the chamfering rounding device is suitable for machining of the silicon wafers with different radiuses, the machining range is widened, and the machining quality is improved.

The application provides a MEMS differential thermal analysis sensor and a DTA / DSC testing method, the sensor comprising a detection thermocouple, a reference thermocouple, an ambient resistance and a shielding ring, wherein the detection thermocouple and the reference thermocouple each comprise a single crystal silicon substrate, a heat insulation cavity, a plurality of single crystal silicon thermocouple pairs and a supporting film, the heat insulation cavity is located in the single crystal silicon substrate, the plurality of single crystal silicon thermocouple pairs are connected in series and are supported by the supporting film to be suspended above the heat insulation cavity to achieve thermal isolation, and the single crystal silicon thermocouple pair comprises an N-type single crystal silicon thermocouple and a P-type single crystal silicon thermocouple connected in series, the temperature and power sensitivity of the sensor are significantly improved, reach 28 mV / K and 100 V / W, and the noise equivalent temperature difference and the noise equivalent power reach 0.5 mK or 0.2 muW. Based on the output signal of the sensor, differential thermal analysis testing and differential scanning calorimetry testing on physical or chemical processes of material heat absorption and release can be realized, the sample consumption is small, and the testing precision is high.

The utility model provides a heat radiation device used for a laser and a laser module comprising the heat radiation device, in one embodiment, the heat radiation device comprises a laser gain medium having a first surface and a second surface; the antireflection film is arranged on the first surface of the laser crystal; the reflecting film is arranged on the second surface of the laser crystal; and the heat sink is used for supporting and fixing the laser gain medium and absorbing heat generated by the laser gain medium, and the heat sink is made of single crystal silicon carbide. The heat dissipation device provided by the utility model is low in processing cost, and facilitates the popularization and application of the disc laser.

The invention belongs to the technical field of semiconductor material detection, and provides a single crystal silicon rod defect detection method which comprises the following steps: controlling a clamping and overturning module to clamp and fix two end surfaces of a single crystal silicon rod; controlling the end face detection module to collect and analyze at least one end face image, and outputting a first detection result about whether the end face is defective; controlling the single crystal silicon rod to continuously rotate around a central shaft, synchronously scanning and shooting the first half side surface, and obtaining a first half side surface panoramic image; the clamping and overturning module is controlled to loosen and overturn the single crystal silicon rod by 180 degrees and then clamp the single crystal silicon rod again, the reference position of the side surface is detected through a laser displacement sensor, and the circumferential angle is finely adjusted based on the detection result to complete pose calibration; s3 is repeated to obtain a second half-side panoramic image connected with the first half-side panoramic image; and splicing the two panoramic images based on the pose calibration result, synthesizing and analyzing a side panoramic image, and outputting a second detection result about whether the side is defective or not. According to the invention, the automation degree and the detection precision of single crystal silicon rod defect detection are improved.

The application belongs to the technical field of single crystal silicon wafer degumming, in particular to a single crystal silicon wafer degumming device, which comprises a machine body for containing degumming liquid and a plurality of supporting assemblies for supporting single crystal silicon wafers, and further comprises: a bracket slidingly installed in the machine body, the bracket being used for placing a wafer holder; two telescopic rods symmetrically installed in the machine body, the supporting assemblies being installed on the telescopic rods, and the supporting assemblies comprising: a No.1 half ring plate fixedly installed on the telescopic rod; a connecting plate fixedly installed on the No.1 half ring plate; and a wiping block installed on the No.1 half ring plate, the wiping block comprising a fixed plate and a sponge block, the sponge block being installed on the fixed plate on the side close to the silicon wafer; by arranging the sponge block, the problem that the glue flows to the surface of the silicon wafer in the softening process is avoided; since there is an adhesive force between the silicon wafer and the glue, compared with the glue flowing to the surface of the silicon wafer, this mode reduces the influence of the adhesive force between the silicon wafer and the glue, and can accelerate the degumming efficiency of the wafer holder and the silicon wafer.

The invention discloses a method for preparing a silicon epitaxial wafer from a heavily-doped silicon single crystal substrate and a formed epitaxial wafer, and the method comprises the steps: taking a carbon-oxygen co-doped boron or phosphorus heavily-doped czochralski silicon wafer as a substrate, carrying out epitaxial high-temperature hydrogen pretreatment, heating to an epitaxial temperature, and further growing an epitaxial layer to prepare a high-quality silicon epitaxial wafer. In the high-temperature hydrogen pretreatment step, the temperature is increased to 1200-1250 DEG C at the speed of 40-60 DEG C / s, the temperature is kept for 150-300 s, then the temperature is reduced to 600-800 DEG C at the speed of 20-50 DEG C / s, and the temperature is kept for 30-120 s. The silicon epitaxial wafer prepared by the invention can form a certain width of high-density carbon-promoted carbon-oxygen co-precipitation induced stacking fault in a clean area on the surface layer of the substrate after being subjected to a device hot working process, has the characteristic of absorbing from gaps to inhibit boron or phosphorus from diffusing outwards, and can obtain a device with stable pressure resistance and strong gettering capability.

The invention discloses a method, a device, equipment and a medium for controlling a Czochralski process, and belongs to the field of Czochralski. Observation variables in the single crystal straight pulling process are obtained and comprise the bright ring outer ring radius, the melt mass and the liquid opening distance. Then, based on a state space model, according to the observation variables, the internal state of the single crystal straight pulling process is estimated, and estimation variables including the estimated crystal radius and the estimated meniscus height are obtained; and then taking the estimated variable as an initial state, determining a predicted change track of an internal state based on a state space model, and generating and executing a control instruction based on the predicted change track by taking a target crystal radius and a target meniscus height as control targets. According to the scheme, through multi-variable collaborative estimation and predictive optimization, the problems that variables are strongly coupled, the internal state cannot be directly measured, control lags and the like in the czochralski single crystal growth process are solved, technical support is provided for preparing high-quality large-size single crystal silicon, and the crystal diameter control precision is improved.

The invention provides a method for reducing OSF of large-size Czochralski monocrystalline silicon, and relates to the technical field of large-size Czochralski monocrystalline silicon. In the crystal pulling process, the rotating speed of a crucible and the reduction amplitude of heating power are reduced in the later stage of shouldering, so that a set vacancy type point defect area is formed in advance, and the OSF of the large-size Czochralski monocrystalline silicon is reduced; increasing the rotating speed of the crucible and increasing the reduction amplitude of heating power in the equal-diameter earlier stage; in the later stage of shouldering, dynamic switching from'low crucible rotation + vacancy type 'to'high crucible rotation + low power' in the earlier stage of equal diameter is carried out, so that vacancy type point defects are driven to move towards a V / I boundary (namely the area where an OSF ring is located) or even from the gap type side, and a clean area without an OSF nucleus is formed in a crystal.

The utility model discloses an integrated two -dimensional optical fiber array module, include: fixed base, be equipped with the assembly recess on the fixed base, the optical fiber fixed base piece of card embedding fixed in the assembly recess, the optical fiber fixed base piece is made by glass material and adopts laser processing, be equipped with a plurality of through arrangement and array distribution's optical fiber fixed hole on the optical fiber fixed base piece, and the one side of optical fiber fixed hole is equipped with the guide mouth, and, optical fiber group, optical fiber group includes a plurality of optical fiber bundles, and the front end of optical fiber bundle is from the guide mouth and enters the optical fiber fixed hole, and fills with the glue solid layer in the guide mouth and the optical fiber fixed hole to fix optical fiber bundle, by adopting the optical fiber fixed base piece made of glass material to replace the multilayer single crystal silicon base piece, on one hand manufacturing cost project, and the processing assembly process is simpler, and thus production efficiency is higher, on the other hand can eliminate multilayer single crystal silicon base piece after assembling and appear corresponding precision error, has improved the optical fiber direction precision.

The invention discloses optical detection equipment based on production and processing of semiconductor electronic components, and relates to the technical field of optical detection of silicon single crystal rods, the optical detection equipment comprises a control cabinet, and two supporting plates are fixed at the top of the control cabinet; the single crystal silicon rod rotating mechanism is connected with the supporting plate; the anti-reflection sheet is driven by the anti-reflection mechanism to move downwards, the anti-reflection sheet is bent to wrap the top and is attached to reduce light reflection, the quality and accuracy of optical detection photos are improved, the push rod motor pushes the supporting frame to move downwards, the first sphere, the second sphere, the rod body and the connecting block are driven to move downwards, the center of the anti-reflection sheet is limited, the edge of the anti-reflection sheet forms an arc shape, and the connecting block and other structures are pulled to incline. Due to the design, hard pulling is avoided, and the device is suitable for single crystal silicon rods with different sizes; the anti-reflection piece cleaning mechanism controls a second motor to drive a gear to rotate reversely, a second one-way gear drives a second reciprocating screw to rotate and drives a fourth sliding block and a scraper to move horizontally, the scraper cleans impurities at the bottom of an anti-reflection piece, and the detection precision is prevented from being affected.

The invention discloses a fragmentation method for a composite silicon carbide substrate. The fragmentation method comprises the following steps: 1) combining a single crystal silicon carbide crystal ingot with a substrate layer; 2) performing internal modification processing on the single crystal silicon carbide crystal ingot by using laser, forming a modification processing layer in the single crystal silicon carbide crystal ingot, and enabling the incident surface of the laser to deviate from the substrate layer; 3) separating the single crystal silicon carbide crystal ingot along the modified processing layer to obtain a residual single crystal silicon carbide crystal ingot and a composite layer with a substrate layer and a single crystal silicon carbide layer; (4) repeating the steps (1)-(3) on the residual single crystal silicon carbide crystal ingot; wherein the sequence of the step 1) and the step 2) can be exchanged. The problems that in the prior art, saw bite loss is large, surface damage is obvious, and wire saw wire loss is large can be solved through the laser fragmentation technology; the utilization rate of the single crystal silicon carbide is improved by utilizing the substrate layer, structural support is provided for the single crystal silicon carbide layer, and subsequent processing of the single crystal silicon carbide layer is facilitated.

The utility model provides a protective disc tablet and a single crystal furnace, and relates to the technical field of single crystal silicon production. The protection disc pressing piece comprises a plurality of pressing piece split bodies which are circumferentially spliced. Target surfaces are arranged on the two circumferential sides of the tablet split body; the target surface is provided with a first concave part and a second concave part; the target surfaces of every two adjacent pressing piece split bodies are arranged in an attached mode, the first concave parts of every two adjacent pressing piece split bodies define a first stepped hole, the second concave parts of every two adjacent pressing piece split bodies define a second stepped hole, and the second stepped holes communicate with the first stepped holes; the cross sectional area of the first stepped hole is larger than that of the second stepped hole, and the second stepped hole is located in the side, close to the soft sticky piece, of the pressing piece split body. According to the protection disc pressing piece, the influence range of airflow can be limited in a relatively small area, and the situation that soft adhesive is blown up in a large area is avoided; meanwhile, the possibility that the soft adhesive is blown up under the action of airflow can be reduced, the cleanliness in the single crystal furnace is ensured, and the growth quality of single crystals is further improved.

The invention discloses a single crystal silicon rod slicing device, and relates to the technical field of single crystal silicon processing, the single crystal silicon rod slicing device comprises a processing base, a supporting table, a silicon rod placing rack and a linkage cutting assembly, the supporting table is installed on the processing base through a first supporting stand column, and the silicon rod placing rack is arranged on the top of the supporting table through a second supporting stand column; the linkage cutting assembly and the U-shaped support are installed on the table top of the supporting table. The core of the device is that when the linkage cutting assembly drives the single crystal silicon rod to move quantitatively, the diamond cutting line completes slicing synchronously, and the cut silicon wafer falls off through the discharging channel and falls into the discharging water tank after being buffered by the rubber rod on the driving disc. According to the device, cyclic operation is achieved through precise transmission of the bevel gear, the belt pulley, the gear and the rack in cooperation with the elastic reset mechanism, the structure is simplified, the slicing efficiency and continuity are improved, the thickness uniformity and edge integrity of the silicon wafer are guaranteed, the breakage rate is reduced, machining parameters can be adjusted by replacing the corresponding gear, environment friendliness and adaptability are both considered, and practicability is high.

The invention discloses a silicon single crystal rod and a preparation method thereof, a silicon wafer and a solar cell, and belongs to the technical field of photovoltaic module preparation. The single crystal silicon rod contains an antimony element and a hydrogen element, the doping concentration of the antimony element in the single crystal silicon rod is Ca, the doping concentration of the hydrogen element in the single crystal silicon rod is Cb, and Ca / Cb is greater than or equal to 1E <-3 > and less than or equal to 4E + 2. According to the silicon single crystal rod provided by the invention, the antimony and the hydrogen are doped at the same time, and the effective segregation coefficient of the antimony in the crystalline silicon is improved through the interaction of the hydrogen and the antimony, so that the resistivity change uniformity of the silicon single crystal rod is improved, the oxygen content of the silicon single crystal rod is improved, the service life of the silicon single crystal rod is prolonged, and the resistivity is accurately controlled; the resistivity of the monocrystalline silicon rod and the derivative product thereof is more uniform and concentrated, and the performance and the production efficiency of the czochralski monocrystalline silicon and the battery can be effectively improved.

The invention relates to the technical field of monocrystalline silicon production. The invention provides a shouldering control method for single crystal silicon production based on a czochralski method in order to solve the problems that in the prior art, detection hysteresis exists, and a shouldering opening cannot be pre-judged in advance. According to the method, a prediction model is trained based on static process data and dynamic process data, and then the opening moment and the opening size of the shouldering are predicted by using the trained prediction model. Static process data and dynamic process data are analyzed through a prediction model, an advanced prediction mechanism is achieved, predicted values of the shouldering splitting time and the opening size are given before shouldering opening, the process can be adjusted in time, the unstable condition in the shouldering process is solved, and the detection hysteresis quality is improved. The production stability and the process matching are ensured; manual intervention can be reduced, the technology is intervened in advance according to the prediction result, and frequent adjustment of technological parameters by technologists can be reduced.

The invention discloses a leak-proof monocrystalline silicon pressure transmitter, and relates to the technical field of pressure transmitters, the leak-proof monocrystalline silicon pressure transmitter comprises a pressure transmitter body, the pressure transmitter body comprises a device body, one end of the device body is fixedly connected with a connector, and the surface of the connector is provided with a sealing mechanism; according to the leak-proof monocrystalline silicon pressure transmitter, through cooperative use of the fitting unit and the water filling unit, the purpose of improving the sealing performance can be achieved, after the pressure transmitter is connected with a pipeline, the connection part can be effectively sealed, and the sealing performance of the pressure transmitter is improved. Therefore, the sealing performance of the joint of the pressure transmitter and the pipeline is improved, the leakage phenomenon is not prone to occurring, it is guaranteed that the pressure transmitter can effectively monitor the pressure value, the accuracy of data during monitoring is guaranteed, and the detection effect on the pressure value is further guaranteed.

To improve productivity of a substrate when manufacturing the substrate from a workpiece such as an ingot utilizing laser beams.SOLUTION: After implementing a first processing step for forming modified parts in a plurality of first regions, a second processing step is implemented for forming modified parts and cracks in a plurality of second regions. The crack formed in the second processing step easily extends toward the modified part formed in the first processing step. Thus, a direction in which the crack easily extends can be arbitrarily set in the second processing step. In such a case, a release layer formed inside of a workpiece can be easily thinned. If the release layer becomes thin, a material amount of the workpiece disposed in segmenting the substrate from the workpiece and flattening the substrate is reduced. As a result, it is possible to improve productivity of the substrate in manufacturing the substrate from the workpiece utilizing laser beams.SELECTED DRAWING: Figure 5

The utility model provides monocrystalline silicon growth equipment, which comprises a crucible assembly, a crucible, a crucible, a crucible, a crucible and a crucible cover, and is characterized in that the crucible assembly is used for accommodating silicon materials; the heating assembly is arranged on the outer side of the crucible assembly to heat the silicon material contained in the crucible assembly and comprises a first heater located on the periphery of the crucible assembly; the heat insulation assembly is annularly arranged on the outer side of the crucible assembly and extends in the height direction, and the heat insulation assembly upwards extends to the lower side of the first heater and downwards extends out of the bottom end of a crucible support of the crucible assembly. The growth equipment for monocrystalline silicon can effectively reduce the temperature of the bottom of the crucible and reduce the content of oxygen impurities.

The present disclosure is directed to the design and fabrication of a two-layer optical switching cell that controllably distributes and reroutes optical signals between bus optical waveguides of an optical switch network. The two-layer optical switching cell includes one or more mechanical optical switches fabricated on a waveguide layer containing bus optical waveguides. The optical switches include suspended commutation optical waveguides supported by a metal structure and configured to couple light from one bus optical waveguide to another bus optical waveguide upon electromechanical actuation. A method for fabricating such an optical switch includes steps that enable fabrication of an optical switching cell with silicon nitride or single crystal silicon optical waveguides and a metal clamp support structure.

The present disclosure relates to the field of photovoltaic technology, and particularly relates to a method for drawing a single crystal silicon rod and a silicon wafer. The method comprises sequentially performed melting, seeding, shoulder-removing and constant-diameter processes. In the constant-diameter process, the following steps are implemented: setting a target furnace pressure and a preset upper limit value of a dry pump opening; adjusting the dry pump opening to control an actual furnace pressure in the furnace at the target furnace pressure; when the current opening of the dry pump is lower than the preset upper limit value, increasing the flow of protective gas into the single crystal furnace, and returning to perform the step of adjusting the dry pump opening based on the furnace pressure change until the opening of the dry pump is greater than or equal to the preset upper limit value. The present disclosure is at least beneficial to improving the electrical performance and yield of the single crystal silicon rod.

The utility model discloses a single crystal silicon drawing re-feeding and feeding device, which relates to the technical field of feeding and comprises a conveyor shell, a conveyor belt body is arranged in the conveyor shell, a dustproof cover plate is fixedly mounted on the conveyor shell, a feeding hopper is fixedly mounted at the lower end of the conveyor shell, and a dust collection mechanism is arranged on the feeding hopper. The dust collection mechanism comprises a dust collection pipeline fixedly installed at the upper end of the feeding hopper, dust collection holes are formed in the inner side of the dust collection pipeline, a pipeline connector is arranged on the dust collection pipeline, a T-shaped pipeline is connected to the pipeline connector, a dust removal filter screen is arranged at the upper end of the T-shaped pipeline, a cover body with holes is connected to the upper end of the T-shaped pipeline, and a draught fan is fixedly installed in the side end of the T-shaped pipeline. A sealing mechanism is arranged at the lower end of the T-shaped pipeline. According to the single crystal silicon drawing re-feeding and feeding device, the dust collection mechanism and the sealing mechanism are used in cooperation, dust generated when materials fall onto the feeding hopper can be absorbed, and pollution to the surrounding environment is reduced.

The application provides a method for determining the type of defects in a single crystal silicon wafer, comprising the following steps: measuring the particles in the As-Grown state silicon wafer by LST to obtain a first measurement result, and determining a V-rich region according to the first measurement result and a first preset density value; and performing heat treatment on the silicon wafer, and again measuring the particles in the silicon wafer by LST to obtain a second measurement result, and determining a Pv region, an I-rich region and a Pi region according to the second measurement result, a second preset density value and a third preset density value, so as to accurately and effectively distinguish the four region types of the V-rich region, the Pv region, the Pi region and the I-rich region in the single crystal silicon wafer by using the particle density, the test result is obviously distinguished, the test stability is high and the repeatability is high, and the requirement of the defect partition type on the silicon wafer is reduced.

The application discloses a thermoelectric pile structure for calibrating a far ultraviolet ultraviolet detector based on MEMS, which comprises a silicon substrate, a support layer, an absorption layer, a thermocouple pair, aluminum wires, aluminum electrodes and a single crystal silicon material structure on the silicon substrate. The double-layer thermocouple stacking structure is adopted to improve the device duty ratio, more thermocouple pairs can be laid in the case of keeping the size of the one-layer structure unchanged, and the response rate of the detector is improved. The circular structure conforms to the distribution trend that the temperature is radially diffused from the center of the absorption layer to the periphery in a decreasing manner, the hot end of the thermocouple pair can be closer to the area with higher temperature, the temperature of the hot end of the thermocouple pair is more uniform, and the response rate of the detector is improved. The radiant energy of the far ultraviolet ultraviolet radiation source is converted into an output thermoelectric electromotive force, a mathematical model of Fourier's law and the Seebeck effect is established for calculation, and the heat flux density of the far ultraviolet ultraviolet radiation source is measured.

The invention relates to a single crystal furnace and a control method thereof. The single crystal furnace comprises a furnace body; the crucible is arranged in the furnace body; the water cooling screen is positioned above the crucible; the guide cylinder is arranged in the furnace body and surrounds the peripheral side of the water cooling screen; and the electromagnetic heating piece is arranged on the peripheral side of the water cooling screen in a surrounding mode and located on the inner side of the flow guide cylinder, the electromagnetic heating piece is further located at the end, close to the crucible, of the water cooling screen, synchronously ascends and descends along with the water cooling screen and the flow guide cylinder, and the electromagnetic heating piece is used for heating a solid-liquid interface between the silicon liquid and the crystal bar. Therefore, the electromagnetic heating element can locally heat the silicon liquid, so that a supercooling area generated on the surface of the silicon liquid due to too high pulling speed in the growth process of the czochralski silicon single crystal is eliminated, the crystal twisting phenomenon is inhibited, the uniformity and high quality of crystal growth are ensured, the yield of the crystal can be ensured, and the uniformity of a thermal field is ensured.

Methods of making a 3D multilayer semiconductor device, including: providing a first substrate including a first level, the first level including a first single crystal silicon layer (SCSL); providing a second substrate including a second level, the second level including a second SCSL; performing an epitaxial growth of a SiGe layer on top of the second SCSL; performing an epitaxial growth of a third SCSL on top of the SiGe layer, the third SCSL has an average thickness of less than 2,000 nm; forming second transistors each including a single crystal channel, where forming the second transistors includes growth of a second SiGe layer on top of the third SCSL; forming many metal layers interconnecting the second transistors; and then performing a bonding of the second level onto the first level, where performing the bonding includes making oxide-to-oxide bond zones; and performing removal of a majority of the second SCSL.