81 results about "Single crystal silicon" patented technology

The utility model discloses an integrated two -dimensional optical fiber array module, include: fixed base, be equipped with the assembly recess on the fixed base, the optical fiber fixed base piece of card embedding fixed in the assembly recess, the optical fiber fixed base piece is made by glass material and adopts laser processing, be equipped with a plurality of through arrangement and array distribution's optical fiber fixed hole on the optical fiber fixed base piece, and the one side of optical fiber fixed hole is equipped with the guide mouth, and, optical fiber group, optical fiber group includes a plurality of optical fiber bundles, and the front end of optical fiber bundle is from the guide mouth and enters the optical fiber fixed hole, and fills with the glue solid layer in the guide mouth and the optical fiber fixed hole to fix optical fiber bundle, by adopting the optical fiber fixed base piece made of glass material to replace the multilayer single crystal silicon base piece, on one hand manufacturing cost project, and the processing assembly process is simpler, and thus production efficiency is higher, on the other hand can eliminate multilayer single crystal silicon base piece after assembling and appear corresponding precision error, has improved the optical fiber direction precision.

The present disclosure relates to the field of photovoltaic technology, and particularly relates to a method for drawing a single crystal silicon rod and a silicon wafer. The method comprises sequentially performed melting, seeding, shoulder-removing and constant-diameter processes. In the constant-diameter process, the following steps are implemented: setting a target furnace pressure and a preset upper limit value of a dry pump opening; adjusting the dry pump opening to control an actual furnace pressure in the furnace at the target furnace pressure; when the current opening of the dry pump is lower than the preset upper limit value, increasing the flow of protective gas into the single crystal furnace, and returning to perform the step of adjusting the dry pump opening based on the furnace pressure change until the opening of the dry pump is greater than or equal to the preset upper limit value. The present disclosure is at least beneficial to improving the electrical performance and yield of the single crystal silicon rod.

The application provides a method for determining the type of defects in a single crystal silicon wafer, comprising the following steps: measuring the particles in the As-Grown state silicon wafer by LST to obtain a first measurement result, and determining a V-rich region according to the first measurement result and a first preset density value; and performing heat treatment on the silicon wafer, and again measuring the particles in the silicon wafer by LST to obtain a second measurement result, and determining a Pv region, an I-rich region and a Pi region according to the second measurement result, a second preset density value and a third preset density value, so as to accurately and effectively distinguish the four region types of the V-rich region, the Pv region, the Pi region and the I-rich region in the single crystal silicon wafer by using the particle density, the test result is obviously distinguished, the test stability is high and the repeatability is high, and the requirement of the defect partition type on the silicon wafer is reduced.

The application relates to a single crystal furnace and a preparation method thereof. The single crystal furnace comprises a furnace bottom, a furnace cylinder and a furnace cover. The furnace bottom is fixedly connected with the furnace cylinder, and the furnace cover is detachably connected with one side of the furnace cylinder away from the furnace bottom. When the furnace cover is connected with the furnace cylinder, the furnace bottom, the furnace cylinder and the furnace cover can jointly form a heating cavity. The inner walls of the furnace bottom, the furnace cylinder and the furnace cover close to the heating cavity are all coated with heat preservation materials. When single crystal silicon is processed through the single crystal furnace, the inner walls of the furnace bottom, the furnace cylinder and the furnace cover close to the heating cavity are all coated with heat preservation materials, so that the heat exchange speed between the internal heat system in the furnace body and the furnace wall can be effectively reduced in the process of the single crystal silicon crystallization growth, the heat loss in the whole preparation process is effectively reduced, the energy consumption cost of the single crystal silicon in the preparation process is low, the manufacturing cost of the single crystal silicon is reduced, the manufacturing cost of the whole solar cell is low, and the solar cell is conducive to popularization.

The utility model discloses a kind of oxygen-reducing inner insulation barrels for single crystal furnace, located below main heater, including bottom plate and the arc-shaped plate of detachable type located the both sides of bottom plate surface, the both ends of arc-shaped plate are provided with the plugging plate of the end joint of bottom plate, the top end of arc-shaped plate and the top end of plugging plate are jointed with top plate. Make the oxygen content in final single crystal silicon reduce, simple structure, facilitate installation, improve dismounting rate, improve insulation effect simultaneously.

The application discloses a processing method of a high-quality SOI silicon substrate polishing wafer, which comprises the following steps: (1) fixing a single crystal silicon substrate wafer on a circular chuck, with the center of the wafer coinciding with the center of the chuck, rotating the chuck at a speed of 100-500 rpm to carry the silicon wafer, at this time, injecting 0.3-8 mL of liquid wax to the center of the wafer, continuously rotating the chuck and the wafer for 1-10 s, under the action of centrifugal force, the liquid wax is coated on the back surface of the wafer; then, increasing the rotating speed of the chuck to 1000-2500 rpm, and continuously rotating for 1-10 s; (2) reducing the rotating speed of the chuck to 800-1500 rpm, at this time, spraying an organic solvent to an area 1-3 mm away from the edge of the wafer, the spraying speed is 1-8 m / s, the duration is 0.1-10 s, and the included angle between the spraying flow and the silicon wafer is 30-60 degrees; (3) after being baked by a heat source, pasting on a wax polishing special tool clamp to perform wax polishing. According to the method, the silicon substrate polishing wafer with a special "concave" shape can be manufactured.

The utility model discloses a single crystal furnace, including furnace body and fixedly connected in the bottom plate of furnace body bottom, the furnace body inner wall fixedly connected with the heat preservation cylinder, the heat preservation cylinder middle position is provided with the crucible, and the crucible bottom is fixedly connected with the supporting rod, and the supporting rod vertically penetrates the bottom plate setting, be provided with the heater between the heat preservation cylinder and the crucible, and the heater bottom is fixedly connected with the connecting ring, the bottom plate bottom is provided with the lifting assembly, and the lifting assembly is used for driving the lifting of connecting ring. The utility model can be to the position of heater and adjust, realize the dynamic adjustment of hot field distribution, promote the quality of single crystal silicon.

A semiconductor memory device includes a device isolation pattern on a substrate to define an active region, a word line in the substrate to intersect the active region, a first doped region in the active region and on a first side of the word line, a second doped region in the active region and on a second side of the word line, a bit line connected to the first doped region and intersecting the word line, a bit line contact connecting the bit line to the first doped region, a landing pad on the second doped region, and a storage node contact connecting the landing pad to the second doped region, the storage node contact including a first portion in contact with the second doped region, the first portion including single crystalline silicon, and a second portion on the first portion and including poly crystalline silicon.

The present disclosure provides a crystal pulling method, device, system and single crystal silicon. The crystal pulling method comprises: in a temperature stabilization stage before the start of the crystal pulling after the completion of the material melting, performing the following power control steps: determining an initial optimized power value; reducing the heating power from the initial optimized power value to a temperature stabilization starting power value; increasing the heating power from the temperature stabilization starting power value to a temperature stabilization target power value higher than the temperature stabilization starting power value in a stepwise temperature recovery manner, so as to stabilize the silicon melt surface state. The crystal pulling method, device, system and single crystal silicon provided by the present disclosure can effectively reduce the pinhole defect density in the single crystal silicon.

The present application relates to the technical field of single crystal silicon wafer defect detection, more specifically, to a product single crystal defect locking system and method based on the principle of black cross light disappearance of silicon wafer, which is used to solve the problem that the prior art usually lacks effective verification of the mechanical orthogonal relationship between the fracture characteristics and the local stress direction, and only relies on image intensity or simple threshold to extract the fracture endpoint, which is easy to be interfered by noise, imaging non-uniformity or crystal microstructure, resulting in false fracture misjudgment; the present application fuses polarization response and mechanical priori through a black cross fracture stress verification module, positions the fracture endpoint by modulating the consistency of depth and phase, combines weighted robust fitting to inverse the local stress direction, and strictly verifies the fracture-stress vertical relationship by statistical test, finally takes the verified points as the boundary to drive anisotropic diffusion to generate a physically reasonable, noise-robust and full-field guided feature field, which provides reliable priori for high-precision stress reconstruction.

The application discloses a method for improving nucleation density of large-size single crystal diamond hetero-epitaxy based on iridium-amorphous carbon pre-implantation layer, which comprises the following steps: firstly, pretreating a single crystal silicon substrate through acid washing, acetone or ethanol ultrasonic cleaning method; sequentially epitaxially growing a nanometer-thickness yttrium stabilized zirconium oxide (YSZ) single crystal film buffer layer and an iridium single crystal film functional layer on the treated single crystal silicon surface; then, pre-implanting an amorphous carbon film on the surface of the iridium / YSZ composite substrate, and performing vacuum annealing stress relief and polishing graphite phase large particle removal treatment on the amorphous carbon film to obtain a smooth and flat surface; finally, epitaxially growing single crystal diamond on the surface of the iridium-amorphous carbon pre-implantation layer, and cutting and removing the composite substrate to obtain large-size single crystal diamond hetero-epitaxy. The method utilizes the amorphous carbon implantation layer to accelerate the dissolution-precipitation process of carbon ions entering the iridium film to form a supersaturated solid solution during bias nucleation, increases nucleation sites, and improves nucleation density, which is of great significance for preparing large-size high-quality single crystal diamond.

The utility model provides a monocrystalline silicon round rod boundary dimension measuring device, which relates to the technical field of measuring equipment, and comprises a machine body, one side of the machine body is provided with a main laser emission head and an auxiliary laser emission head, and the laser emission heads are used for irradiating and measuring an object; the adjusting device is arranged on the adjusting device, the adjusting device can freely adjust the installation height of the machine body so that laser rays generated by the main laser emitting head can effectively irradiate the surface of the monocrystalline silicon round rod, the adjusting device comprises a sliding rail, the sliding rail is detachably installed on the machine body through an assembling assembly, and the assembling assembly is arranged on the sliding rail. According to the utility model, the installation height of the machine body can be flexibly adjusted by arranging the adjusting device, so that the situation that the distance between the machine body and a measured object is relatively long after the machine body is installed, the object is separated from the irradiation range of laser rays, and the normal measurement of a monocrystalline silicon round rod is influenced is reduced, and the use flexibility and convenience of the machine body are improved.

The present application relates to the technical field of single crystal silicon production equipment, in particular to a single crystal silicon furnace external feeding assembly, which comprises a base, a furnace body fixedly installed on the base, and a feeding pipe installed on the upper end of the furnace body, a filler pipe is installed on the upper end of the feeding pipe through fastening bolts, the filler pipe is made of high-purity quartz, and a filtering unit is installed at a position close to the lower end inside the filler pipe, by installing the filtering structure in the traditional filler pipe, not only the filling speed can be controlled, but also the collision of the silicon raw material can be reduced, thereby reducing the generation of dust and impurities, at the same time, the generated silicon dust and impurities are filtered out, finally, the cleaning of the filtering structure is realized by using high-pressure airflow, the purity of the silicon solution in the furnace body is effectively ensured, and then the stretching effect of the single crystal is ensured.

A single-crystal silicon and a manufacturing method therefor, and a silicon wafer. The manufacturing method comprises: when a magnetic field is applied to a raw material melt and a single-crystal silicon is pulled by using the Czochralski method, growing the single-crystal silicon in a manner of controlling the magnetic field strength to be between 2000 Gauss and 3000 Gauss. In this way, the oxygen concentration of the grown single-crystal silicon is 5.6 ppma or more and 8.5 ppma or less, and the RRG in the crystal cross section orthogonal to the growth direction of the single-crystal silicon is 1% or less.

The present invention relates to a raw material supply method and a method of producing a single crystal silicon. The present invention provides a raw material supply method including: a solidification step of adjusting a power of a heater that heats a quartz crucible so as to solidify a surface of a silicon melt; a feeding step of feeding a solid raw material to a solidified portion of the surface; and a melting step of melting the solidified portion and the solid raw material, wherein the power of the heater in the solidification step is adjusted based on a power value of the heater at the time when a liquid-attaching step of attaching a seed crystal to the silicon melt is performed in a conventional method of producing a single crystal silicon.

A method for producing a substrate for a solar cell formed from single-crystal silicon, comprising the following steps: producing a gallium-doped silicon single-crystal ingot; cutting a silicon substrate from the silicon single-crystal ingot, wherein the silicon substrate has an oxygen concentration of 12 ppm or more; and subjecting the silicon substrate to a low-temperature heat treatment at a temperature of 800°C or more and less than 1200°C, wherein the low-temperature heat treatment includes dopant diffusion treatment using a diffusion mask, wherein the silicon substrate is subjected to a high-temperature heat treatment at a temperature of 1200°C for 10 minutes prior to the low-temperature heat treatment, such that oxide deposition nuclei are dissolved, wherein the high-temperature heat treatment is carried out prior to forming the diffusion mask and in an atmosphere containing phosphorus oxychloride.

The application provides a single crystal silicon wafer cleaning system and method, and the cleaning system comprises a first cleaning tank, a second cleaning tank, a third cleaning tank, a fourth cleaning tank and a high-pressure conveying device; the fourth cleaning tank comprises a first tank body for containing a first cleaning solution containing hydrogen peroxide aqueous solution, a second tank body for containing a second cleaning solution containing hydrogen peroxide aqueous solution, a third tank body for containing a third cleaning solution containing hydrogen peroxide aqueous solution, at least one first light source for providing light to the first tank body, and at least one second light source for providing light to the third tank body; the first tank body and the second tank body are communicated through a first anti-radical oxidation reverse osmosis membrane; the second tank body and the third tank body are communicated through a second anti-radical oxidation reverse osmosis membrane; at least one composite plate is arranged in the first tank body and the second tank body respectively; each composite plate comprises doped graphene, and the problems of high single crystal silicon wafer cleaning cost and complex wastewater treatment are solved.

The utility model provides a kind of gas phase jet etching device, including etching chamber, rotating platform, manipulator, jet nozzle, etching liquid evaporation tank, auxiliary atmosphere preheating tank and mixer.Rotating platform is used to fix single crystal silicon ring and drive it to rotate, jet nozzle is installed on manipulator.Etching liquid evaporation tank is used to provide etching liquid atmosphere to jet nozzle, auxiliary atmosphere preheating tank is used to provide auxiliary atmosphere to jet nozzle.Mixer is used to mix etching liquid atmosphere and auxiliary atmosphere.The gas phase jet etching device can improve the color and luster uniformity of single crystal silicon ring working surface by etching the working surface of single piece single crystal silicon ring.Meanwhile, the device only etches single piece single crystal silicon ring each time, and the effective etching component sprayed by jet nozzle can always maintain stable state, so that the etching removal amount of the device is stable, the roughness range fluctuation of single crystal silicon ring working surface is very small, and the consistency of product size can be guaranteed.

A method of preparing a silicon-on-insulator structure includes forming an epitaxial silicon layer on a front surface of a single-crystal silicon donor substrate; forming a dielectric layer on the epitaxial silicon layer to thereby form an epitaxial donor structure including the single-crystal silicon donor substrate, the epitaxial silicon layer, and the dielectric layer; bonding the dielectric layer of the epitaxial donor structure to a front surface of a handle structure to thereby form a bonded structure including the handle structure, the dielectric layer, the epitaxial silicon layer, and the single-crystal silicon donor substrate, the handle structure including a single-crystal semiconductor handle substrate; and removing the single-crystal silicon donor substrate and a portion of the epitaxial silicon layer from the bonded structure to thereby form the silicon-on-insulator structure including the handle structure, the dielectric layer, and a silicon device layer.

The utility model discloses a take rod device for single crystal silicon rod cutting machine, aims at providing a take rod device of single crystal silicon rod cutting machine with good stability. The utility model discloses a machine table, be provided with first drive mechanism on the machine table, and first drive mechanism can drive the horizontal movement of bearing rod, and the lower extreme of bearing rod is connected with first connecting seat, and the lower extreme of first connecting seat is connected with second connecting seat through a plurality of first telescopic link, and be provided with second drive mechanism on first connecting seat, and second drive mechanism can drive the suspension lift, and the suspension is connected with second connecting seat, and the bottom of second connecting seat is provided with clamping drive mechanism, and clamping drive mechanism can drive two moving seat open and close, and the inboard of moving seat is provided with second telescopic link, and the inboard of second telescopic link is provided with mounting seat, and be provided with arc clamping plate on mounting seat, and the inboard of arc clamping plate is provided with antiskid washer. The utility model discloses be applied to the technical field of single crystal silicon rod processing.

The application provides a single crystal silicon rod error correction method and device, electronic equipment and storage medium, wherein the method comprises: detecting the head measured resistivity and tail measured resistivity of the single crystal silicon rod generated by the n-mth adding; m is a positive integer greater than 0 and less than n; based on the segregation characteristics of the single crystal silicon material and the head measured resistivity, the tail theoretical resistivity of the single crystal silicon rod generated by the n-mth adding is calculated; based on the deviation of the tail measured resistivity and the tail theoretical resistivity, it is verified whether the head measured resistivity is correct; when it is verified that the head measured resistivity is correct, the doping amount of the doping element in the single crystal silicon rod generated by the nth adding is calculated according to the head measured resistivity. Through the method, the chain error correction problem caused by the measurement error of the head measured resistivity of the nth adding is prevented.

This invention discloses a method for manufacturing a heteroepitaxial wafer, which is a method for epitaxially growing a 3C-SiC single crystal film on a single crystal silicon substrate. The method is characterized by the following steps: preparing a single crystal silicon substrate with a (111) orientation; removing the natural oxide film on the surface of the single crystal silicon substrate using a flash lamp device and hydrogen calcination; and supplying a source gas containing carbon and silicon to the flash lamp device to grow SiC single crystals on the surface of the single crystal silicon substrate. The natural oxide film removal step involves preheating at 300°C to 600°C and then performing hydrogen calcination at 900°C to 1350°C. The SiC single crystal growth step involves preheating at 300°C to 600°C and then performing SiC nucleation at 900°C to 1350°C. Therefore, a method for manufacturing a heteroepitaxial wafer is provided, which efficiently epitaxially grows a high-quality 3C-SiC single crystal film on a single crystal silicon substrate.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

This invention discloses a single-crystal furnace leakage drainage device and a single-crystal furnace, including a furnace body with multiple support legs installed at the lower end of the furnace body. A crucible is disposed inside the furnace body, and a drain pipe is connected to the inner bottom of the furnace body. A diversion assembly is provided at the end of the drain pipe, used to alternately discharge leaked single-crystal silicon through two pipes. The diversion assembly includes a diversion box, which is fixedly connected to an L-shaped bracket on the outside of the furnace body. The diversion box contains a circular cavity and two storage cavities, and the drain pipe communicates with the top space of the circular cavity. This invention provides a single-crystal furnace leakage drainage device that achieves orderly alternating drainage, effective sealing to prevent leakage, efficient and uniform cooling, and is structurally stable and easy to maintain. It solves the technical problems of low drainage efficiency, poor sealing performance, and unsatisfactory cooling effect of existing devices, reducing equipment damage and safety risks caused by single-crystal silicon leakage, and ensuring the continuity and stability of single-crystal silicon production.

The application provides a preparation method of a crucible, the crucible and a single crystal furnace, and relates to the technical field of single crystal silicon preparation. The preparation method of the crucible comprises the following steps: arranging a carbon source on the outer wall of a crucible body; in an oxygen-free environment, the crucible body with the carbon source arranged on the outer wall is heated to a first preset temperature, so that the carbon source on the outer wall of the crucible body reacts with silicon dioxide in the crucible body to generate an isolation layer on the outer wall of the crucible body; the composition of the isolation layer comprises silicon nitride and / or silicon carbide. In the crystal pulling process, the isolation layer can physically isolate the silicon dioxide in the crucible body and the carbon in the crucible help, so that the loss of the crucible help can be avoided, the isolation layer is located on the outer wall of the crucible body, and the good physical isolation effect is continuously maintained. The isolation layer is not easy to fall off, the structure of the isolation layer is more compact and uniform, and the physical isolation effect is better. The isolation layer basically does not react with the crucible help, and the service life of the crucible help is longer.

This disclosure provides a method, system, and wafer for pulling single-crystal silicon rods. The method includes a crystal pulling stage, a shoulder turning stage, a constant diameter growth stage, and a finishing stage. In the constant diameter growth stage, crystal pulling process control is performed to maintain the ratio of the pulling speed change value to the temperature gradient change value as a fixed value. The crystal pulling adjustment includes maintaining the pulling speed at a constant pulling speed target value and dynamically adjusting the temperature gradient based on the diameter change of the single-crystal silicon rod.

The application relates to the technical field of single crystal silicon rod manufacturing, and provides a single crystal furnace, a first sub-chamber assembly of the single crystal furnace is used for pulling a crystal, a second cylinder body of a second sub-chamber assembly is movably connected with a furnace main body, the lower end of the second cylinder body can be sealingly docked with a furnace mouth, the diameter of the second cylinder body is greater than the outer diameter of a second crucible, the second crucible is arranged in the second cylinder body and is detachably hoisted on a crucible lifting mechanism, the outer diameter of the second crucible is smaller than the diameter of the furnace mouth, and the crucible lifting mechanism is configured to hoist and place the second crucible in the first crucible under the condition that the second cylinder body is docked with the furnace mouth. In this way, after the service life of the first crucible expires, the second cylinder body of the second sub-chamber assembly can be removed and docked with the furnace mouth of the furnace main body, then the second crucible containing silicon material can be placed in the first crucible through the crucible lifting mechanism, the replacement of the crucible can be realized, the production efficiency of a single crystal rod can be improved, and energy can be effectively saved and production cost can be reduced.

This invention relates to the field of single-crystal silicon preparation technology, specifically disclosing a method for preparing Czochralski silicon single crystals. The method provided by this invention solves the problem of high oxygen content caused by crucible oxygen release through the physical barrier of the solidified layer formed by zone solidification. It also achieves the preparation of large-size single-crystal silicon with extremely low oxygen content by using the zero-magnetic-force surface of the CUSP magnetic field to facilitate oxygen volatilization and suppressing oxygen atom migration to the growth interface through a strong edge magnetic field. This solves the problem of the difficulty in stably mass-producing large-size, low-oxygen-content single-crystal silicon using the zone melting method in existing technologies. Furthermore, the Czochralski silicon single crystal preparation method provided by this invention is simple and controllable to operate, requires no special or complex equipment, and is suitable for large-scale production.