961 results about "Single crystal silicon" patented technology

The invention provides a method for determining the volatilization behavior of antimony, a silicon single crystal rod, a silicon wafer and a solar cell, and the method comprises the steps: determining the volatilization behavior of antimony in a leading and releasing stage and / or an equal-diameter stage: in the leading and releasing stage, pulling out a small end from molten silicon; the total feeding amount and the initial antimony concentration are obtained; the mass, the phosphorus-antimony concentration and the phosphorus concentration of the small head are obtained; according to the total feeding amount, the phosphorus-antimony concentration, the initial antimony concentration and the phosphorus concentration, the volatilization amount of antimony in the small end pulling stage is calculated; in the equal-diameter stage, the actual resistivity of the silicon rod at multiple positions is obtained; converting the actual resistivity at the plurality of positions into actual phosphorus and antimony concentrations; acquiring the actual phosphorus concentration at each position; calculating the actual antimony concentration at each position according to the actual phosphorus-antimony concentration and the actual phosphorus concentration; and according to the actual antimony concentration, the effective segregation coefficient of antimony, the initial phosphorus concentration and the solidification fraction, the volatilization coefficient of antimony in the equal-diameter stage is fitted. By means of the method, the volatilization behavior of antimony in the single crystal pulling process can be determined.

A method of preparing a silicon-on-insulator structure includes forming an epitaxial silicon layer on a front surface of a single crystal silicon donor substrate, forming a dielectric layer on the epitaxial silicon layer to thereby form an epitaxial donor structure including the single crystal silicon donor substrate, the epitaxial silicon layer, and the dielectric layer, bonding the dielectric layer of the epitaxial donor structure to a front surface of a handle structure, the handle structure including a single crystal semiconductor handle substrate, to thereby form a bonded structure including the handle structure, the dielectric layer, the epitaxial silicon layer, and the single crystal silicon donor substrate, and removing the single crystal silicon donor substrate and a portion of the epitaxial silicon layer from the bonded structure to thereby form the silicon-on-insulator structure including the handle structure, the dielectric layer, and a silicon device layer.

The invention relates to the technical field of optical processing, and provides a large-caliber monocrystalline silicon aspheric surface high-precision polishing method which is characterized by comprising the following steps: S10, obtaining full-caliber surface shape error distribution of a large-caliber monocrystalline silicon aspheric surface and mapping the full-caliber surface shape error distribution to a discrete grid; s20, constructing a residence time distribution optimization model and a polishing path planning optimization model, and outputting an optimal residence time distribution matrix and a polishing path sequence by taking the surface shape error parameters of the large-aperture monocrystalline silicon aspheric surface as input; s30, based on the optimal residence time distribution matrix and the polishing path sequence, the aspheric surface of the large-diameter monocrystalline silicon is polished; and S40, after each polishing cycle, the steps S10-S40 are repeated until the number of iterations is reached. According to the method, a closed-loop control method of time distribution-path planning-dynamic calibration is formed, so that the surface shape precision and efficiency of large-diameter aspheric surface polishing are remarkably improved.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention relates to the technical field of transmitters, and discloses an intelligent monocrystalline silicon pressure difference transmitter which comprises a sensor, diaphragms are arranged on the left side and the right side of the sensor, a first process flange is installed on the front side of the sensor, a second process flange is installed on the rear side of the sensor, and a machine body is fixedly connected to the upper surface of the sensor. A displayer is installed on the front side of the machine body, the sensor is electrically connected with the machine body, and an overload plugging device is arranged on the inner wall of the second process flange. The overload plugging device comprises a U-shaped guide frame, the U-shaped guide frame is installed on the inner wall of the second process flange, and the inner wall of the U-shaped guide frame is connected with a connecting rod in a sliding mode. According to the invention, through the arrangement of the overload plugging device, the interface part can be cut off when the tested pressure end of the transmitter is subjected to overlarge instantaneous pressure, so that the impact of the instantaneous pressure on the diaphragm of the tested pressure end is reduced, and the protection performance of the transmitter on the large instantaneous pressure is improved.

The invention relates to a preparation method of a silicon single crystal rod and a silicon wafer. Comprising a melting stage, a temperature adjusting stage, a welding stage, a seeding stage, a shouldering stage, an equal-diameter stage, an ending stage and a breaking stage which are carried out in sequence, in the equal-diameter stage, the pulling speed is controlled to be within a first pulling speed range, and the solid-liquid interface temperature gradient is controlled to be within a first gradient range; wherein the range of the first pulling speed ranges from 0.5 mm / min to 1.1 mm / min; the first gradient range is 3 DEG C / cm to 5 DEG C / cm. By reducing the temperature gradient of a solid-liquid interface and lowering the crystal pulling rate, the stability of a thermal field is enhanced, and sufficient conditions are provided for the composite reaction of Sii and V, so that the impurity capturing efficiency is improved, the internal purity of the crystal is improved, and the impurities are effectively removed.

This application provides a crystal growth method and crystalline silicon, relating to the field of solar photovoltaic technology. The method comprises: performing a leak test on a single crystal furnace under a first furnace pressure; adding a dopant to the single crystal furnace under a second furnace pressure; wherein the second furnace pressure is greater than the first furnace pressure; and performing a crystal pulling process after adding the dopant. This application can reduce axial concentration distribution differences of doping elements in doped single crystal silicon, improve axial resistivity uniformity of the single crystal silicon, and enhance production efficiency.

To provide a method for growing a silicon crystal without substantially including defects.SOLUTION: A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. A melt depth and heat conditions are fixed during growth since a silicon melt is continuously replenished as the silicon melt is consumed; a crucible position is fixed; a critical v / G is determined by a hot zone structure; the continuous replenishment of silicon to the melt during the growth can grow an ingot at a fixed pulling speed coincident with the critical v / G while growing the substantial part of an ingot main body; and the continuous replenishment of silicon is achieved by periodical or continuous nitrogen addition generating a nitrogen doped ingot.SELECTED DRAWING: Figure 5

The invention discloses a double-sided flexible solar cell and a preparation method thereof. The solar cell sequentially comprises a flexible semitransparent photovoltaic cell, a curved surface reflector and a flexible photovoltaic cell from top to bottom, wherein the flexible semitransparent photovoltaic cell sequentially comprises a packaging layer, a second transparent electrode, an electron transport layer, a light absorption layer, a hole transport layer and a first transparent electrode from top to bottom; the curved-surface reflecting mirror comprises a curved-surface substrate, a high-reflectivity metal layer and a weather-resistant protective layer from top to bottom in sequence. The flexible photovoltaic cell is one of a perovskite solar cell, an organic solar cell, a CIGS solar cell, a dye-sensitized solar cell, a monocrystalline silicon solar cell, an amorphous silicon solar cell, a cadmium telluride thin film solar cell and a quantum dot solar cell. The double-sided flexible solar cell provided by the invention can solve a series of problems that a traditional flexible solar cell is low in solar spectrum utilization rate, insufficient in photovoltaic and photo-thermal system collaboration, poor in complex curved surface adaptability and the like.

A method of fabricating an IR transparent window wafer with integrated AR grating structures includes providing a handle wafer having a first surface and a second surface opposite the first surface, providing a device wafer including a single crystal silicon layer disposed on an oxide layer, the single crystal silicon layer having a planar side and the oxide layer having a bonding side that is opposite the planar side, forming AR grating structures in a first portion of the first surface of the handle wafer, bonding the bonding side of the oxide layer to the first surface of the handle wafer, and etching a recess in the planar side of the single crystal silicon layer to: remove the buried oxide layer, form a plurality of recess walls, and expose the AR grating structures in the first portion of the first surface of the handle wafer.

The utility model relates to a bottom heater for improving the material melting efficiency of a single crystal furnace, which belongs to the technical field of a thermal field for producing single crystal silicon by a czochralski method and comprises a heating body and two foot plates which are symmetrically arranged left and right, are respectively positioned on two opposite sides of the heating body and are connected with the heating body; the heating body comprises a first heating body and a second heating body which are symmetrically arranged in the vertical direction; the middle of the foot plate extends and protrudes towards the center of the bottom heater to form an arc-shaped plate, and electrode holes are formed in the arc-shaped plate. The first heating body comprises a first heating unit, a second heating unit and a third heating unit, the first heating unit and the third heating unit are symmetrically arranged on the left side and the right side of the second heating unit, and the outer side of the first heating unit and the outer side of the third heating unit are each of a step-shaped structure. The bottom heater is simple in structure, high in heating power and uniform in heating, the occurrence rate of arcing and sparking of the bottom heater and the heat preservation cylinder caused by external factors is effectively reduced, the service life of the bottom heater is prolonged, the service life of a thermal field is prolonged, and the stability of the thermal field is improved.

The present invention relates to the field of dynamic control technology, and provides a dynamic control method, system and equipment for a single crystal silicon production process. The method comprises: installing a multi-mode sensor unit in a pulling furnace, acquiring multi-mode monitoring data, analyzing and extracting finishing features, inputting a risk prediction model, optimizing a pulling speed adjustment strategy according to the prediction results, and correcting the deviation between the prediction and the actual pulling speed, thereby solving the technical problems of potential fracture risks in the finishing stage and lack of an effective mechanism to timely identify and correct potential production risks, comprehensively and real-timely monitoring the growth process of single crystal silicon, ensuring that environmental changes and crystal growth states in production are captured in time, and timely discovering anomalies through analysis of characteristic data of the crystal finishing stage to avoid production accidents caused by fractures or unstable states, ensuring the accuracy and real-time nature of the adjustment process, and achieving the technical effects of high efficiency, stability and safety in the single crystal silicon production process.

A processing method for processing a single-crystal silicon wafer that has a first surface and a second surface formed in such a manner that a specific crystal plane included in a crystal plane {100} is exposed in each of the first and second surfaces and has devices formed in the respective regions marked out by planned dividing lines in the first surface. The method includes forming dividing origins along each planned dividing line, forming a separation layer along the crystal plane of the second surface through relatively moving a focal point and the wafer along a first direction that is parallel to the crystal plane of the second surface and in which an acute angle formed between the first direction and the crystal orientation <100> is equal to or smaller than 5°, and separating the wafer into a first-surface-side wafer including devices and a second-surface-side wafer including no devices.

The utility model relates to the technical field of monocrystalline silicon wafer polishing, in particular to a waste scraper for monocrystalline silicon wafer polishing, which comprises a polishing platform. A waste cleaning part is arranged above the polishing platform; a scraping plate used for cleaning the top of the connecting base is further installed in the fixing groove in a liftable mode, the front end of the scraping plate is bent downwards and abuts against the top face of the polishing platform, the connecting rod penetrates through the scraping plate and is in sliding connection with the scraping plate, and the bottom end of the spring abuts against the scraping plate. By arranging a polishing platform and a waste cleaning part, waste generated by monocrystalline silicon wafer polishing falls on the polishing platform, a motor drives a lead screw to rotate, the lead screw rotates to drive a connecting base to horizontally move, the connecting base drives a supporting rod and a mounting base to horizontally move at the same time, and at the moment, a scraping plate moves along the top of the polishing platform; the scraping plate can simultaneously push waste materials at the top of the polishing platform into the collecting box for collection; by means of the design, the polishing platform can be cleaned conveniently, waste generated by polishing can be collected conveniently, and the beneficial effect of being convenient to use is achieved.

A silicon carbide seed is provided, including a first seed layer and a second seed layer. The first seed layer includes a polycrystalline silicon carbide material. The second seed layer is directly attached to the first seed layer, where the second seed layer includes a single crystal silicon carbide material, and a thickness ratio (T2 / T1) of a thickness T1 of the first seed layer to a thickness T2 of the second seed layer is in a range of 10% to 50%.

The present invention is a substrate for a high-frequency device in which a nitride semiconductor film is formed on an SOI substrate, the SOI substrate being a TRSOI substrate in which a trap-rich layer formed on a base substrate and an SOI layer comprising single crystal silicon are bonded with an oxide film interposed therebetween, the SOI layer having a resistivity of 1 k [omega] * cm or more and a crystal plane orientation of (111). And the oxygen concentration is 14.8 ppma or less. As a result, a substrate for a high-frequency device having excellent high-frequency characteristics and a method for manufacturing the same are provided.

The invention discloses an alkali polishing additive for rapid polishing of monocrystalline silicon and a use method of the alkali polishing additive, and relates to the technical field of monocrystalline silicon etching, and the alkali polishing additive comprises the following components: a reaction accelerator, a corrosion and scale inhibitor, a PH regulator, a defoaming agent, 1, 3-bis (2-hydroxyethyl)-2-imidazolinone, 2, 5-furandimethanol, quinoline yellow, sodium glycyrrhizinate, melamine, hydroxypropyl chitosan and deionized water. The additive is good in alkali polishing effect under low weight loss, high in efficiency, good in stability, good in polished surface appearance and obvious in gain effect on the light conversion efficiency of the solar cell.

The invention provides a method for improving COP defects based on crystal bar temperature gradient control, and relates to the technical field of monocrystalline silicon production, the method comprises the following steps: collecting temperature distribution data of a crystal bar growth interface and surface in real time, and reading a crystal bar pulling speed in real time; calculating an instantaneous V / G value according to the temperature distribution data and the pulling speed of the crystal bar; comparing the instantaneous V / G value with a preset V / G critical value; and according to the comparison result, adjusting the inward or outward opening angle of the scales on the scale type radiation adjusting device arranged between the crystal bar and the heat shield, so as to adjust the crystal bar temperature gradient G by adjusting the heat radiation reflected to different positions of the crystal bar, and further adjust the V / G value. According to the scheme, the thermal radiation reflection path can be dynamically changed according to the actual condition of the single crystal growth stage, so that the temperature gradient distribution of the single crystal growth stage is adjusted, the V / G value is further adjusted to reduce the generation of COP defects, and the quality of the single crystal is improved.

The invention relates to the technical field of resonators, and discloses an MEMS resonator and a composite preparation method thereof.The composite preparation method of the MEMS resonator comprises the steps that a highly-doped first monocrystalline silicon layer is formed to serve as a supporting substrate; forming a piezoelectric material layer on the first monocrystalline silicon layer; forming a seed layer on the piezoelectric material layer at a first set rate, epitaxially forming a main body layer on the seed layer at a second set rate, and compounding the seed layer and the main body layer to form a highly doped second monocrystalline silicon layer; deep reactive ion etching is carried out on the laminated structure layer constructed based on the first monocrystalline silicon layer, the piezoelectric material layer and the second monocrystalline silicon layer, a resonator body, a connecting beam and an anchoring part are formed, and the resonator body is arranged in a suspended mode and connected with the anchoring part through the connecting beam. According to the invention, the electromechanical coupling efficiency and the quality factor of the MEMS resonator are improved, and the temperature stability of the MEMS resonator is ensured.

The invention belongs to the technical field of monocrystalline silicon production, and particularly relates to a single crystal furnace tail gas purification and recovery device which comprises a tail gas collecting pipe, the output end of the tail gas collecting pipe is fixedly connected with a box body, the interior of the box body is divided into a cooling cavity and two filtering cavities through a partition plate, and the two filtering cavities are symmetrically arranged; by arranging the power mechanism, the two gas inlet mechanisms and the impurity removal mechanism can be driven to operate, the two gas inlet mechanisms can input tail gas and backwashing gas into the two filter cavities correspondingly, meanwhile, the filter cavity input with the tail gas can close the connected impurity removal mechanism, and the filter cavity input with the backwashing gas can open the connected impurity removal mechanism; and the two filtering cavities can operate and work at the same time, the tail gas is alternately filtered through the two filtering cavities, therefore, the tail gas can be continuously filtered, and the tail gas recycling efficiency can be improved.

To provide a novel method for detecting dislocation that is present in a single crystal silicon specimen after a coating is formed thereto.SOLUTION: A method for detecting dislocation of a single crystal silicon specimen includes a step of detecting a part as dislocation that is observed as a bright line in an electronic channeling image that is acquired by irradiating a surface of a single crystal silicon specimen with an electron beam by a scanning electron microscope, where the irradiation with the electron beam includes a step of irradiating one or more crystal planes of the single crystal silicon specimen with the electron beam in an incidence azimuth within a range of satisfying an electronic channeling condition and the one or more crystal planes include a {220} surface.SELECTED DRAWING: None

The invention provides a physical unclonable functional material based on diamond particles and a preparation method and application thereof. The physical unclonable functional material comprises a monocrystalline silicon substrate and diamond particles which grow on the monocrystalline silicon substrate in situ and have silicon vacancy color centers. The preparation of diamond particles on a silicon substrate is a random process, which is a key requirement for manufacturing a physical unclonable function label. According to the method, the scattered spectrum of the diamond particles and the morphological characteristics and spatial position relation of the diamond particles are used as the fingerprint information of the diamond physical unclonable functional material. Due to the extremely heat resistance, mechanical stability, chemical stability and light stability of the diamond material, the high-robustness label can meet the requirements of many practical applications in various environments, and has practical commercial value in huge anti-counterfeiting markets such as electronic elements, medicine packaging, vehicles and luxury.

The invention provides a preparation method of a silicon thin film hybrid back contact solar cell and the solar cell obtained by adopting the method. The preparation method of the silicon thin film hybrid back contact solar cell comprises the step of depositing the boron-doped silicon thin film layer on the back surface of the monocrystalline silicon by adopting high-density plasma chemical vapor deposition. The preparation method of the silicon thin film hybrid back contact solar cell has the advantages of being high in deposition rate, small in plasma damage, good in uniformity, high in mass production feasibility and the like, and cost reduction and efficiency improvement of the solar cell are facilitated.

The invention provides a crystal pulling method for improving light boron-doped crystal BMD and a silicon single crystal rod, and belongs to the technical field of silicon single crystal pulling, crystal rod pulling is carried out in a predetermined thermal field to change the temperature gradient in the thermal field and increase the interval length of the BMD nucleation temperature, and in the crystal pulling process, the BMD nucleation temperature is increased. According to the present invention, the crystal rotation, the crucible rotation and the pulling speed are adjusted so as to improve the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar, such that the concentration and the distribution uniformity of the interstitial oxygen and the vacancy in the crystal bar are pre-improved so as to provide sufficient raw materials for BMD nucleation, and then the temperature gradient in the thermal field is changed so as to increase the interval length of the BMD nucleation temperature, interstitial oxygen and vacancies are promoted to generate BMD, and then the BMD defect density in the light boron-doped crystal is remarkably improved through the synergistic effect of a preset thermal field, crystal transition, crucible transition and the pulling speed.

The present invention belongs to the technical field of silicon wafer processing, and in particular, relates to a thin-line single crystal silicon wafer cutting method and device, comprising the following steps: S1. fixing two ends of single crystal silicon on a workbench, the single crystal silicon is located below five groups of cutting lines, and the five groups of cutting lines are controlled to rotate by a motor 1 and a rotating shaft 1; S2. slowly moving the single crystal silicon upwards by raising the workbench, and the rotating five groups of cutting lines all cut the single crystal silicon, and the four cut single crystal silicon wafers are clamped by a clamping component; S3. after the five groups of cutting lines have completed cutting the single crystal silicon, the remaining single crystal silicon follows the workbench to descend to the initial position, the single crystal silicon wafer in the clamping component is taken out, and the five groups of cutting lines cut the single crystal silicon at the same time, and four single crystal silicon wafers can be cut out at one time by the five groups of cutting lines, with high cutting efficiency, and at the same time the clamping component clamps the single crystal silicon to prevent the single crystal silicon wafer from tilting or tipping over during cutting, resulting in uneven cutting of the single crystal silicon wafer or damage caused by secondary cutting.

The invention discloses a Czochralski monocrystalline silicon thermal field thermal insulation cylinder, which belongs to the technical field of monocrystalline silicon production, and comprises an upper cylinder body and a lower cylinder body, the inner diameter of the upper barrel is larger than that of the lower barrel, and steps at the inner joint of the upper barrel and the lower barrel are streamlined. The upper end and the lower end of the inner wall of the heat preservation cylinder form rounding oblique angles; a plurality of diversion trenches are formed in the inner wall of the heat preservation cylinder from the upper end to the lower end. The invention can effectively solve the problems of low thermal utilization efficiency of the existing monocrystalline silicon thermal field, pollution of returned gas to silicon liquid, difficult crystallization caused by high oxygen content in crystals and the like.

The invention provides a corrosion-resistant and low-friction CoCrNiTiC medium-entropy alloy carbide film and a preparation method thereof. The alloy comprises Co, Cr, Ni, Ti and C. The formula of the alloy comprises Co, Cr, Ni, Ti and C. A CoCrNiTiC entropy alloy carbide film is prepared on a substrate and a monocrystalline silicon wafer (100) by adopting planar radio frequency magnetron sputtering, a CoCrNi alloy target, a Ti target and a graphite target are selected as target materials, the gas introduced in the sputtering process is Ar gas with the purity of 99.99%, the working pressure is 1.0 Pa, and the deposition time is 2 hours. According to the method, the CoCrNiTiC high-entropy alloy carbide film is prepared through planar target magnetron sputtering, the thickness of the medium-entropy alloy carbide film ranges from 600 nm to 800 nm, and an SEM shows that the surface of the film is uniform and flat and has no obvious defects. Along with the increase of the carbon content, the friction coefficient of the film is gradually reduced, the corrosion resistance is enhanced, and the toughness is improved.

The invention discloses a monocrystalline silicon growth furnace and a control method thereof, the monocrystalline silicon growth furnace comprises a main furnace chamber and an auxiliary furnace chamber, the main furnace chamber is communicated with the auxiliary furnace chamber, the main furnace chamber comprises a furnace cover, a furnace cylinder and a furnace bottom, the furnace cover is detachably connected with one side of the furnace cylinder, and the furnace bottom is connected with the furnace cylinder. And the furnace bottom is detachably connected with the other side of the furnace barrel. According to the monocrystalline silicon growth furnace disclosed by the invention, the furnace bottom is designed into a liftable structure and is matched with the operation platform, so that on one hand, the occupied land load is greatly reduced, on the other hand, the production operation is convenient, the production efficiency is greatly improved, the safety is high, and the equipment investment cost is reduced.

The invention belongs to the technical field of semiconductor material processing, and relates to a laser modification and low-temperature impact controllable stripping method and system for a single crystal silicon carbide wafer. The method comprises the following steps: pretreating the surface of a single crystal SiC crystal ingot to form a uniform rough surface; setting femtosecond laser initial parameters, and carrying out modification treatment in the crystal ingot to form a modified area; laser parameters are optimized through sweep-frequency optical coherence tomography and a CNN model, and optimal parameters are obtained; inducing to form a modified layer parallel to the surface in the crystal ingot by utilizing the parameters; coating a polymer on the surface of the modified layer and pre-cooling the crystal ingot; and applying a low-temperature impact load to promote the II-type crack to expand along the crystal face so as to realize controllable stripping. The method solves the problem that cracks are difficult to control in the laser stealth cutting technology.

The present invention relates to a single crystal silicon wafer cleaning device and method, comprising a bearing support 1, a control support 2, a control support 1 and a bearing support 2; the bearing support 2 is hinged at a position directly above the bearing support 1, the control support 1 and the control support 2 are respectively located at two end points of the periphery of the bearing support 1, a bearing column is welded on the back of the bearing support 1, a bearing arm 3 is hinged directly above the control support 2, and a bearing arm 4 is docked at the upper side wall position of the bearing arm 3. The present invention enables the support seat to perform telescopic movement through the threaded transmission relationship between the threaded rod 2 and the internal threaded seat, and the linkage plate will be in staggered contact with the protrusions and grooves on the linkage frame, so that the linkage plate performs reciprocating telescopic movement, and under the action of the linkage rod, the transmission wheel rotates, and the transmission wheel is engaged with the transmission plate, and the nozzle can rotate at this time, and the single crystal silicon surface can be cleaned in two different forms of straight flushing and oblique flushing, thereby improving the cleaning effect of the single crystal silicon wafer.