The invention relates to the technical field of
semiconductor material
processing, in particular to a
silicon carbide substrate
basal plane dislocation defect detection and regeneration
system and method.The detection and regeneration method comprises the steps that a
silicon carbide substrate is divided into an edge
exposure area and a center
mask protection area, and photoetching
mask coating and gradient concentration
corrosion are conducted; performing graded scanning on a
silicon carbide substrate area by using a
weight factor method;
cutting parameters are calculated, and
laser cutting is conducted; sequentially carrying out crushing separation, acid
pickling purification and high-temperature
calcination on the wastes to generate
silicon carbide regenerated
powder, and refeeding the
silicon carbide regenerated
powder into a
semiconductor production line; the detection and regeneration
system is applied to the method, the
silicon carbide substrate is subjected to cooperative control of
mask corrosion, dynamic detection, intelligent
cutting and waste regeneration processes, the
corrosion time and the detection time are shortened, the percent of pass is increased, and the material loss is reduced.