Manufacturing method of multilayer nanowire structure

Abstract

The invention provides a manufacturing method of a multilayer nanowire structure. The manufacturing method comprises the following steps: a. providing a first silicon matrix and forming a first oxide layer on the first silicon matrix, b. providing a second silicon matrix, injecting hydrogen ions into the second silicon matrix, forming a position mark on the second silicon matrix, c. cutting the first silicon matrix intelligently and forming an insulator upper silicon structure on the first silicon matrix, d. forming a second oxide layer on the insulator upper silicon structure, e. repeating step b and step d, forming a multilayer insulator upper silicon structure on the first silicon matrix, f. defining the graph of the multilayer nanowire structure, g. etching the multilayer isolator upper silicon structure to form a multilayer nanowire structure on the first silicon matrix, and h. removing the second oxide layer under the nanowires in the multilayer nanowire structure. By means of the manufacturing method of the multilayer nanowire structure, the crystal orientations of the nanowires are different.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a multilayer nanowire structure (Nanowire). Background technique [0002] According to Moore's law, the size of semiconductor devices is gradually reduced proportionally. In this case, in order to control the short channel effect more effectively, semiconductor devices with non-planar structures are widely used, such as fin field effect transistors (FinFET) and Nanowire Field Effect Transistor (Nanowire FET). [0003] Due to the on-state current I of the nanowire field effect transistor ON It is positively correlated with the number and length of the nanowires in the transistor, therefore, the performance of the field effect transistor with multilayer nanowire structure is more superior. The preparation of the multi-layer nanowire structure is usually to form a positioning mark or a mask on a semiconductor substrate with an interlayer dielectri...

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Problems solved by technology

However, the crystal orientation of the multilayer nanowire structure formed by the above method is consistent with the crystal orientation of the semiconductor substrate, and cannot be freely selected according to actual needs.

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