2137 results about "Hydrogen ion" patented technology

Apparatus and methods for repairing silicon dangling bonds resulting from semiconductor processing are disclosed. The silicon dangling bonds can be repaired by introducing hydrogen radicals with substantially no hydrogen ions into the processing chamber to react with the silicon dangling bonds, eliminating them.

In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.

There is provided a method of fabricating a silicon-on-insulator substrate, including the steps of (a) forming a silicon substrate at a surface thereof with an oxygen-containing region containing oxygen at such a concentration that oxygen is not precipitated in the oxygen-containing region in later mentioned heat treatment, (b) forming a silicon oxide film at a surface of the silicon substrate, (c) implanting hydrogen ions into the silicon substrate through the silicon oxide film, (d) overlapping the silicon substrate and a support substrate each other so that the silicon oxide film makes contact with the support substrate, and (e) applying heat treatment to the thus overlapped silicon substrate and support substrate to thereby separate the silicon substrate into two pieces at a region into which the hydrogen ions have been implanted, one of the two pieces remaining on the silicon oxide film as a silicon-on-insulator active layer. The support substrate, the silicon oxide film located on the support substrate, and the silicon-on-insulator active layer formed on the silicon oxide film defines a silicon-on-insulator structure. The method makes it possible to significantly reduce crystal defect density in the silicon-on-insulator active layer, which ensures that a substrate made in accordance with the method can be used for fabricating electronic devices thereon.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in the concentration of inorganic pyrophosphate (PPi), hydrogen ions, and nucleotide triphosphates.

Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

A separation layer is provided on a substrate, and a thin film device, such as TFT, is formed thereon. Separation accelerating ions such as hydrogen ions are implanted into the separation layer in the course of the process for forming the thin film device. After the formation of the thin device, the thin film device is preferably joined to a transfer material through an adhesive layer, and irradiated with laser light from the substrate side. This causes separation in the separation layer by also using the action of the separation acceleration ions. The thin film device is separated from the substrate. This permits transfer of a desire thin film device to any substrate.

In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form a fine bubble layer (enclosed layer) within the wafer; the ion-implanted silicon wafer is superposed on the other silicon wafer such that the ion-implanted surface comes into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed in order to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, in order to form a thin film to thereby obtain an SOI wafer. In the method, a defect layer at the delaminated surface of the thus-obtained SOI wafer is removed to a depth of 200 nm or more through vapor-phase etching, and then mirror polishing is performed. Therefore, the obtained SOI wafer has an extremely low level of defects and a high thickness uniformity.

There is disclosed a method of recycling a delaminated wafer produced as a by-product in producing an SOI wafer according to a hydrogen ion delaminating method by reprocessing it for reuse as a silicon wafer, wherein at least polishing of the delaminated wafer for removing of a step in the peripheral part of the delaminated wafer and heat treatment in a reducing atmosphere containing hydrogen are conducted as the reprocessing. There are provided a method of appropriately reprocessing a delaminated wafer produced as a by-product in a hydrogen ion delaminating method to reuse it as a silicon wafer actually, and particularly, a method of reprocessing an expensive wafer such as an epitaxial wafer many times for reuse, to improve productivity of SOI wafer having a high quality SOI layer, and to reduce producing cost.

A process is disclosed for producing cement clinker, comprising the steps of: a) providing a mixture of ground calcareous materials and ground argillaceous materials; b) heating the mixture of step a) to a temperature sufficient to calcine and fuse the ground materials to form the cement clinker, and thereby producing an exhaust gas containing CO₂; c) catalysing the hydration of at least a portion of the CO2 contained in the exhaust gas and producing a solution containing bicarbonate ions and hydrogen ions; and d) adding to the solution obtained in step c) metal ions, and adjusting the pH of the solution to precipitate a carbonate or said metal. Preferably, the metal ions are Ca⁺⁺ obtained from the dissolution of a material selected from the group consisting of CaCl₂, cement kiln dust and sea salts and the carbonate is CaCO₃ which is advantageously recycled into the process by adding the CaCO₃ to the mixture of step a). A cement plant for performing this process is also disclosed.

The present invention is directed to a water treatment or purification system and method for providing treated water in industrial, commercial and residential applications. The treatment system provides treated or softened water to a point of use by removing at least a portion of any hardness-causing species contained in water from a water source, such as municipal water, well water, brackish water and water containing foulants. The water treatment system includes an electrochemical device, such as an electrodeionization device, that can have at least one compartment that generates and traps hydrogen ions which can be used in another compartment of the electrochemical device such as, an electrode compartment, to reduce or at least dissolve any scale. Other applications of the system would be in the treatment and processing of foods and beverages, sugars, various industries such as the chemical, pharmaceutical, waste water treatment and power generating industries.

A polymer electrolyte fuel cell of the present invention includes a hydrogen ion-conductive polymer electrolyte membrane, an anode and a cathode sandwiching the hydrogen ion-conductive polymer electrolyte membrane, an anode-side conductive separator plate having a gas flow channel for supplying a fuel gas to the anode, and a cathode-side conductive separator plate having a gas flow channel for supplying an oxidant gas to the cathode. Each of the anode-side conductive separator plate and the cathode-side conductive separator plate is rectangle in shape and has an oxidant gas manifold aperture for an inlet arranged on one short side thereof, an oxidant gas manifold aperture for an outlet arranged on the other short side thereof, a fuel gas manifold aperture for an inlet and a fuel gas manifold aperture for an outlet arranged on different longitudinal sides thereof, and a cooling water manifold aperture for an inlet and a cooling water manifold aperture for an outlet arranged on the different longitudinal sides thereof. The respective fuel gas manifold apertures are disposed opposite to the cooling water manifold apertures. The oxidant gas manifold apertures, the fuel gas manifold apertures, and the cooling water manifold apertures have openings of different shapes.

To obtain a semiconductor substrate having a high-quality Ge-based epitaxial film in a large area, a SiGe mixed crystal buffer layer and a Ge epitaxial film is grown on a main surface of a Si substrate 10. Although high-density defects are introduced in the Ge epitaxial film 11 from an interface between the Ge epitaxial film 11 and the Si substrate 10, the Ge epitaxial film is subjected to a heat treatment at a temperature of not less than 700° C. and not more than 900° C. to cause threading dislocations 12 to change into dislocation-loop defects 12′ near the interface between the Ge epitaxial film 11 and the Si substrate. A main surface of at least one of the Ge epitaxial film 11 with an ion implanted layer and a support substrate 20 is then subjected to a plasma treatment or ozone treatment for the purpose of surface cleaning, surface activation, and the like, after which the main surfaces of the Ge epitaxial film 11 and the support substrate 20 are appressed against and bonded to each other with their surfaces being determined as the joint surfaces. An external impact is then applied to the bonding interface, causing the Ge epitaxial film to be delaminated along a hydrogen ion implanted interface 13, thus obtaining a Ge thin film 14. A surface of the Ge thin film 14 is subsequently subjected to a final surface treatment (for example, CMP) to remove the damage caused by the hydrogen ion implantation, thus resulting in a GeOI substrate having the Ge thin film 14 on the surface thereof.

Disclosed herein is an electroless copper plating solution, including a copper salt, a completing agent, a reductant and a pH adjuster, in which the plating solution includes a 2,2-dipyridyl acid solution and the hydrogen ion concentration (pH) thereof is about 11.5 to about 13.0, a method of producing the same, and an electroless copper plating method. According to the plating solution of the present invention, an electroless copper plating film having stable and improved adhesivity and low electrical resistance can be obtained. Further, display devices including a metal pattern formed with the electroless copper plating solution can improve the reliability and price competitiveness of products prepared therefrom.

A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

The invention relates to a compound chemical blocking removing agent of an oil field polymer injection well. The compound chemical blocking removing agent is characterized in that a high molecular extending agent with strong electronegativity is used for hydrating and extending condensed and agglomerated polymer macromolecule chains again; peroxide is used as a primary oxidation agent; polybasic carboxylic acid which can slowly and uniformly ionize hydrogen ions is used as controlled-release acid; auxiliary agents such as a corrosion inhibitor, a penetrant, a metal ion chelating agent, a dual-metal coupling agent, an iron ion stabilizer, a bacteriacide, a stratum protective agent, and the like are added at the same time; and macromolecular polymers in blocking substances, which are near the oil field polymer injection well, and are fully extended by the extending agent, are oxidized and degraded by active hydroxyl which is produced from the reaction of the primary oxidation agent and the controlled-release acid, so that blocking of the polymer injection well is removed, and the apparent water injectivity index is improved. The chemical blocking removing agent is non-toxic and environment-friendly, has a wide applicable range of temperature and water quality, and has the advantages of simplicity in construction technique, safety and convenience in use and storage, and the like; and the viscosity-reducing rate of the compound chemical blocking removing agent to polyacrylamide gel can reach above 99%.

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

A polymer electrolyte fuel cell comprising a hydrogen-ion conductive polymer electrolyte membrane, an anode and a cathode sandwiching the hydrogen-ion conductive polymer electrolyte membrane, an anode-side conductive separator plate having gas flow channels for supplying a fuel gas to the anode, and a cathode-side conductive separator plate having gas flow channels for supplying an oxidant gas to the cathode, wherein the anode-side and cathode-side conductive separator plates have a substantially rectangular part in contact with the anode or cathode in which the length of a longer side is equal to or more than twice the length of a shorter side, and the oxidant gas flow channels have a linear part formed along the longer side of the rectangular part.

A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si_1-xGe_x (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si_1-yGe_y layer, a thin strained Si_1-zGe_z layer and another relaxed Si_1-yGe_y layer. Hydrogen ions are then introduced into the strained Si_zGe_z layer. The relaxed Si_1-yGe_y layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si_1-yGe_y layer remains on the second substrate. In another exemplary embodiment, a graded Si_xGe_x is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.

An aspect of the present invention is a process for modifying a substrate in areas that are exposed to actinic radiation, having the steps: (a) providing on the substrate functional groups adapted for conversion to oxygen-containing photoproducts upon exposure to actinic radiation; (b) exposing at least a portion of the substrate to the actinic radiation, converting the functional groups in an exposed region of the substrate to the photoproducts; (c) contacting the photoproducts with a primary or secondary amine in the presence of hydrogen ions, forming imine groups; and (d) contacting the imine groups with a reducing agent, forming amine groups on the substrate in the exposed region. Another aspect of the present invention is a process for modifying a substrate in areas that are unexposed to actinic radiation, having the steps: (a) providing on the substrate aryl functional groups adapted for conversion to oxygen-containing photoproducts upon exposure to actinic radiation; (b) exposing a portion of the substrate to the actinic radiation, converting the aryl functional groups in an exposed region of the substrate to the photoproducts, and not converting the aryl functional groups in an unexposed region of the substrate to the photoproducts; (c) contacting the aryl functional groups in the unexposed region of the substrate with a compound adapted for physisorption to the aryl functional groups, preferentially physisorbing the compound onto the substrate in the unexposed regions.