2results about How to "Thin layer" patented technology

This invention belongs to the field of inorganic nanoparticle preparation technology, and relates to a ball milling modification method for bifunctionalized thin-layer hexagonal boron nitride: Hexagonal boron nitride powder, guanidine hydrochloride, and urea are continuously heated and stirred to obtain a homogeneous mixture of a eutectic solvent formed by guanidine hydrochloride and urea and the hexagonal boron nitride powder; this mixture is poured into a ball mill jar containing grinding balls and a liner, and a certain amount of ethanol and water are added as dispersants for high-energy ball milling; after the material is separated from the grinding balls, the milled material is vacuum filtered, dried, and the resulting powder is dispersed in water, then ultrasonicated, allowed to stand, vacuum filtered, and dried to obtain bifunctionalized thin-layer hexagonal boron nitride. This invention not only has the advantages of readily available raw materials and simple process, but also high efficiency, environmental friendliness, and low energy consumption. The hexagonal boron nitride obtained by this method has thinner layers, good biocompatibility, low relative density, and good thermal conductivity.

The invention discloses a two-dimensional antiferromagnetic material and a preparation method and application thereof, and the method comprises the following steps: adopting Mn and Te elementary substance powder, taking I2 as a transportation agent, and synthesizing a blocky MnTe precursor through a vacuum chemical vapor transport method under a vacuum sealing condition; the preparation method comprises the following steps: mixing a ground MnTe precursor with In elementary substance powder and fluxing agent KCl powder, carrying out fluxing reaction in a vertical confinement space constrained by a constant normal pressure and in an inert atmosphere, and inducing the crystal to epitaxially grow along the horizontal direction, thereby forming a two-dimensional Mn (InTe2) 2 crystal on a fluorine crystal mica substrate, and carrying out wet transfer to obtain the two-dimensional Mn (InTe2) 2 crystal on a SiO2 / Si substrate, according to the method, the two-dimensional Mn (InTe2) 2 crystal with the antiferromagnetic characteristic is prepared through a step-by-step precursor induction type confinement pressure melting epitaxial method, and the method is simple in process and high in repeatability; the two-dimensional Mn (InTe2) 2 crystal has the characteristics of good crystal quality, large transverse size, controllable layer number and the like, and can be applied to a high-density magnetic storage device.