19 results about "Atomic species" patented technology

The present disclosure relates to materials science using processing of crystallographic structure data and artificial intelligence, and more particularly to methods and apparatuses for estimating material properties from crystallographic descriptive data, wherein a computer-implemented method includes generating first data representing a crystal structure from crystallographic descriptive data; generating, in view of structural periodicity, second data representing an expanded supercell; converting the second data into input data as a four-dimensional tensor in which a first dimension corresponds to atom species and remaining dimensions correspond to coordinates of a discretized three-dimensional grid; supplying the input data to a neural network including convolutional layers and a self-attention mechanism to extract features; and estimating, from the extracted features, at least one material property of the material. Related apparatuses and non-transitory computer-readable media are also disclosed.

A calculation apparatus for calculating a correlation function from a structural model comprises a structural model acquiring section for acquiring the structural model including a plurality of types of atoms in space, an atomic species setting section for setting a specific atomic species in the structural model, and a correlation function calculating section for calculating the correlation function that is a ratio between a first radial distribution function and a second radial distribution function, wherein the first radial distribution function is a radial distribution function between atoms of the specific atomic species and atoms of the specific atomic species, and the second radial distribution function is a radial distribution function between atoms of the specific atomic species and atoms of two or more types of atomic species including the specific atomic species.

The present invention relates to a method for searching for a structural gene of glass, including the following steps: determining atomic species for structure search according to the glass system; screening structure on the basis of the first principle to screen out compounds that can be formed by the interaction among each of the atoms; comparing the formation energy and the phonon spectrum of each compound to obtain stable compounds; and constructing a metastable composition diagram of a glass system according to the stable compounds, in metastable composition diagram, a micro-structural unit of a glassy compound near a target glass composition point is the structural gene of glass in the metastable glass composition diagram; designing glass properties based on the characteristics of the structural genes; and realizing the design of high-performance glasses through a hot-melt method.

A temporary substrate, which is detachable at a detachment temperature higher than 1000° C. comprises:a semiconductor working layer extending along a main plane,a carrier substrate,an intermediate layer having a thickness less than 20 nm arranged between the working layer and the carrier substrate,a bonding interface located in or adjacent the intermediate layer,gaseous atomic species distributed according to a concentration profile along the axis normal to the main plane, the atoms remaining trapped in the intermediate layer and / or in an adjacent layer of the carrier substrate with a thickness less than or equal to 10 nm and / or in an adjacent sublayer of the working layer with a thickness less than or equal to 10 nm when the temporary substrate is subjected to a temperature lower than the detachment temperature.

This invention provides a computing device, method, and program for calculating correlation functions from structural models. [Solution] A computing device 100 for calculating a correlation function from a structural model, comprising: a structural model acquisition unit 110 for acquiring the structural model containing multiple types of atoms in space; an atom species setting unit 120 for setting specific atom species in the structural model; and a correlation function calculation unit 130 for calculating the correlation function which is the ratio of a first radial distribution function to a second radial distribution function, wherein the first radial distribution function is the radial distribution function between atoms of the specific atom species and atoms of the specific atom species, and the second radial distribution function is the radial distribution function between atoms of the specific atom species and atoms of two or more atom species including the specific atom species.

Thin film transistors are described. An integrated circuit structure includes a gate electrode. A gate dielectric layer is on the gate electrode. A planar or non-planar channel material layer is on the gate dielectric layer. Source or drain contacts on the planar or non-planar channel material layer. One or more of the gate electrode, the gate dielectric layer, or the planar or non-planar channel material layer has a concentration of an atomic species in lateral outer regions thereof different than a concentration of the atomic species in a central portion thereof.

Systems and methods for generating an entangled pair of bichromatic photons are described. The system includes an atomic vapor cell containing atoms of an atomic species located within beam paths of a first and second laser beam. The first and second laser beams are tuned to first and second wavelengths that are resonant with first and second atomic transitions of the atomic species such that the first and second laser beams cause a four-wave mixing process within the atomic vapor cell. As a result of the four-wave mixing process, entangled photon pairs having a third and fourth wavelength are generated and output from the atomic vapor cell. The first and second wavelengths may be selected to create electromagnetically-induced transparency (EIT) within the atomic vapor cell, the EIT creating a transparent medium within the atomic vapor cell at the third wavelength, improving spectral brightness and / or photon linewidths.

The application provides an electron density information acquisition method, system, medium, terminal and program product based on machine learning. The method comprises the following steps: first, constructing a real differential density according to a real electron density and a reference electron density; inputting atomic species, atomic coordinates, cell information and uniform grid definition information of a target structure into a machine learning model for training, and taking the real differential density as a supervision target during the training to construct a differential density prediction model; deploying the constructed differential density prediction model to output a predicted differential density of a to-be-tested complex structure according to to-be-tested complex structure information; and performing a recovery operation on the output predicted differential density to obtain total electron density information of the to-be-tested complex structure. The application can acquire electron density information of a complex structure with high precision and high efficiency, and stably support downstream calculations such as photoelectric properties and quantum transport of heterostructures, interface structures and device structures.

A method is used to fabricate a structure comprising a thin layer bonded to a carrier by way of a dielectric layer, the carrier comprising a charge-trapping layer placed on the surface of a base substrate. The method includes applying a surface treatment to an exposed surface of the main face of the carrier and / or to an exposed surface of the main face of the donor substrate to form thereon a layer that acts as a barrier to the diffusion of certain atomic species. This surface treatment involves exposing the exposed surface to an oxygen-containing plasma, and then exposing the exposed surface to a nitrogen-containing plasma.

A loading assembly for providing atomic objects to a confinement apparatus is provided. The loading assembly includes an oven configured to generate an atomic flux of an atomic species / isotope having a non-zero nuclear spin. The loading assembly includes mirror and magnet arrays configured to, when optical beams are provided to the arrays, generate a two-dimensional magneto-optical trap (2D MOT) with a simplified repumping scheme. The 2D MOT is configured to generate a substantially collimated atomic beam from the oven generated atomic flux.

The present disclosure generally provides methods of providing at least metastable radical molecular species and / or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

The present invention relates to a method of manufacturing a diamond substrate or a substrate of group III-V material for microelectronic applications, the method comprising: bonding a plurality of blocks (20) of single crystal diamond or single crystal group III-V material onto a support substrate (1), each block being spaced from an adjacent block, thereby exposing a lateral surface of each block (S2); epitaxially growing a diamond or group III-V material starting from the lateral surface and the upper surface of each block until a continuous layer (2) of single crystal diamond or single crystal group III-V material extending over the plurality of blocks (20) is formed; forming a weakened region (21) in the continuous layer of single crystal diamond or single crystal group III-V material (2) by implanting atomic entities to define a surface layer (22) to be transferred; bonding the single crystal diamond continuous layer or the single crystal III-V group material continuous layer (2) to a receiving substrate (3); the continuous layer of single crystal diamond or the continuous layer of single crystal III-V material (2) is separated along the weakened region (21), thereby transferring the surface layer of single crystal diamond or single crystal III-V material (22) onto a receiving substrate (3) to form a diamond substrate or a substrate of III-V material.

A plasma engine includes a plasma source that generates ions from molecular gas species received at a gas input where at least some of the ions generated are atomic species ions. An ion extractor is configured to extract ions from the plasma source with an electric field. A housing comprising a recombination region receives ions extracted from the ion extractor. At least some of the atomic species ions recombine into molecular species in the housing, thereby releasing energy for thrust.

The invention discloses a calibration-free flame atomic ratio detection method based on laser-induced breakdown spectroscopy, and relates to the technical field of optical combustion detection.The calibration-free flame atomic ratio detection method comprises the steps that a laser-induced breakdown spectroscopy system is built; carrying out a laser-induced breakdown spectroscopy collection test on the target measurement position of the flame by adopting a laser-induced breakdown spectroscopy system to obtain an original spectral signal; calculating the temperature of the laser-induced plasma based on the original spectral signal, and verifying that the laser-induced plasma is in a local heat balance state; calculating a partition function of the target atoms in the laser-induced plasma based on the temperature of the laser-induced plasma and the types of the target atoms; and calculating the flame atomic ratio based on the original spectral signal, the laser-induced plasma temperature and the partition function of the target atom in the laser-induced plasma. The method has the advantages that the flame atomic ratio in the wide laser energy range can be accurately measured without depending on a calibration curve, and meanwhile, the reliability of a measurement result is ensured by verifying the plasma state.

A quantum-computing method includes executing a data quantum circuit with data qubits, all of which are of the same first type of quantum system having a first plurality of transitions. The quantum-computing method also includes executing a spectator quantum circuit with spectator qubits, all of which are of the same second type of quantum system having a second plurality of transitions. During execution of the spectator and data quantum circuits, the spectator qubits and data qubits are simultaneously driven with a coherent radiation field while the data qubits are in coherent superposition states. The radiation field is (i) far detuned from all of the first plurality of transitions and (ii) resonant with one of the second plurality of transitions. The first and second types of quantum system may be two different atomic species that can each be laser cooled and trapped, such as rubidium and cesium.

A structure comprises a support including an electric charge-trapping layer on the surface of a base substrate. The structure further comprises a thin layer of a lithium-based material on the support. The structure comprises an interlayer dielectric layer arranged between, and in contact with, the support and the thin layer. The interlayer dielectric layer comprises a first dielectric layer arranged on, and in contact with, the charge-trapping layer, a silicon nitride barrier layer arranged on, and in contact with, the first dielectric layer and a second dielectric layer arranged on, and in contact with, the silicon nitride barrier layer.

The application provides an electron density information acquisition method, system, medium, terminal and program product based on machine learning. The method comprises the following steps: first, constructing a real differential density according to a real electron density and a reference electron density; inputting atomic species, atomic coordinates, cell information and uniform grid definition information of a target structure into a machine learning model for training, and taking the real differential density as a supervision target during the training to construct a differential density prediction model; deploying the constructed differential density prediction model to output a predicted differential density of a to-be-tested complex structure according to to-be-tested complex structure information; and performing a recovery operation on the output predicted differential density to obtain total electron density information of the to-be-tested complex structure. The application can acquire electron density information of a complex structure with high precision and high efficiency, and stably support downstream calculations such as photoelectric properties and quantum transport of heterostructures, interface structures and device structures.