278 results about "Bond energy" patented technology

Disclosed are a printed wiring board having micro-via holes highly reliable for conduction and a method of making the micro-via hole by providing a coating or sheet of an organic substance containing 3 to 97% by volume of at least one selected from a metal compound powder, a carbon powder or a metal powder having a melting point of at least 900° C. and a bond energy of at least 300 kJ/mol on a copper foil as an outermost layer of a copper-clad laminate having at least two copper layers, or providing a coating or sheet of the same after oxidizing a copper foil as an outermost layer, irradiating the coating or sheet with a carbon dioxide gas laser at an output of 20 to 60 mJ/pulse, thereby removing a micro-via-hole-forming portion of at least the copper foil as the outermost layer, then irradiating micro-via-hole-forming portions of the remaining layers with a carbon dioxide gas laser at an output of 5 to 35 mJ/pulse to make a micro-via hole which does not penetrate through the copper foil in a bottom of the micro-via hole, and electrically connecting the copper foil as the outermost layer and the copper foil in the bottom of the micro-via hole with a metal plating or an electrically conductive coating composition.

A thin film transistor (TFT) array substrate is provided. The thin film transistor (TFT) array substrate includes an insulating substrate, an oxide semiconductor layer formed on the insulating substrate and including an additive element, a gate electrode overlapping the oxide semiconductor layer, and a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, wherein the oxygen bond energy of the additive element is greater than that of a base element of the oxide semiconductor layer.

A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers to create defect regions, for example by plasma-treating the surface to be bonded with a or boron-containing plasmas such as a B2H6 plasma. The surface defect regions may also be created by ion implantation, preferably using boron. The surfaces may also be amorphized. The treated surfaces are placed together, thus forming an attached pair at room temperature in ambient air. The bonding energy reaches approximately 400 mJ/m2 at room temperature, 900 mJ/m2 at 150° C., and 1800 mJ/m2 at 250° C. The bulk silicon fracture energy of 2500 mJ/m2 was achieved after annealing at 350-400° C. The release of hydrogen from B-H complexes and the subsequent absorption of the hydrogen by the plasma induced modified layers on the bonding surfaces at low temperature is most likely responsible for the enhanced bonding energy.

The invention discloses a preparation method of an amphoteric ion exchange membrane and relates to a preparation method of an amphoteric ion exchange membrane for an all-vanadium redox flow battery. According to the scheme, the preparation method comprises the following steps of: performing irradiation grafting on polymer powder poly(vinylidene fluoride); transforming the irradiation-grafted polymer powder into a membrane material; and sulfonating the membrane material, hydrolyzing, introducing a sulfonate radical group with a cationic exchange function, putting the membrane material into a hydrochloric acid aqueous solution for undergoing a protonation reaction and introducing basic nitril with an anion exchange function to obtain the amphoteric ion exchange membrane. In the method, commercial poly(vinylidene fluoride) resin with low price is taken as a raw material, so that the membrane making cost can be lowered; a C-F bond has large bond energy, so that the membrane can keep high chemical stability in a strong acid and high oxidizing electrochemical environment; and meanwhile, the problem of non-uniform distribution of grafted chains of the conventional heterogeneous irradiation-grafted membrane in the vertical direction of the membrane is solved.

A molecular complex for application to fuser members in toner fusing systems. The complex is formed from molecules with complementary acid and base functional groups. These groups interact to provide a noncovalent bond having a bond energy of about 20 kJ/mol or more.

The invention discloses a positive electrode material of a multi-element layered lithium ion battery. The chemical general formula of the positive electrode material is LiNiaMbNcO2, and the Li-Ni mixed ranging degree is less than 2%; in the chemical general formula, M is a transition-metal element, N is one or more of Al, Mg, Ti and Zr, and the values of a, or b, or c meet conditions that a+b+c=1, a>0.3, and c<0.03. The preparation method is as follows: preparing a multi-element precursor by virtue of utilizing a coprecipitation method, and then performing lithiation and sintering, thereby obtaining the positive electrode material of a multi-element layered solid solution. Compared with the prior art, the positive electrode material of the multi-element layered lithium ion battery has the advantages that the Li-Ni mixed ranging degree is reduced to less than 2%, so that the positive electrode material has higher coulomb efficiency, better layer structure and stronger bond energy and shorter bond length of metal-oxygen bond and also has better cycle performance and obviously improved thermal stability at a high temperature and a high pressure.

This invention discloses a preparation method of functional order mesoporous carbon without metal. Make water-soluble phenol formaldehyde and response type of acid for polymerization, utilize predecessor and nonionic wetting agent to carry out organism-organism self assembly, get resin-nonionic wetting agent composite containing boron and phosphonium, remove surface acting agent by calcinating in inert atmosphere, carbonize with high temperature, get non-metal element functional ordered mesoporous polymer, and make order mesoporous carbon with boron or phosphonium. Its ordered meso-scale structure is divided into two kinds. It has characteristics of uniform large specific surface, pore diameter, bore, and path. Because boron oxygen bond of high bond energy is leaded in molecular constitution, it makes order mesoporous carbon with boron have strong mechanical stability. It can be used as wear-resisting stuff. It has lubricating, abrasion improving, service life of friction materials extending effects. It has extensive application prospect in catalytic action, heavy metal ion, and colorant molecular adsorption and electrode materials.

Belonging to the technical field of oil-gas field chemical agents, the invention relates to a foaming drainage agent for gas well drainage gas recovery. The foaming drainage agent for gas well drainage gas recovery is formed by mixing of a gemini surfactant, a zwitterionic surfactant, a high-bond energy surfactant and a macromolecular polymer. The foaming drainage agent provided by the invention has high temperature environment resistance (up to 180DEG C), suitability to environment with wide pH value (of 1-10), high mineralization degree resistance (greater than or equal to 320000mg/L), and resistance to hydrogen sulfide and carbon dioxide atmosphere (with the hydrogen sulfide partial pressure being greater than or equal to 25% and the carbon dioxide partial pressure being greater than or equal to 20%). And the foaming drainage agent also has the advantages of excellent foaming performance, good foam stability, good water-carrying effect, low surface tension, and foam volume mostly higher than 8 times.

The invention provides a forming method of a grid oxidation layer. The forming method comprises the following steps of: providing a substrate, and forming a grid oxide layer on the substrate by a thermal oxidation process, wherein reactive gas in the thermal oxidation process is mixed gas at least containing deuterium. According to the forming method, a deuterium element is introduced into the thermal-oxidation growth process of the grid oxidation layer, silicon dangling bonds in a saturated interface state form silicon-deuterium bonds with stronger combination so as to reduce the silicon dangling bonds positioned in the interface state or replace hydrogen of silicon-hydrogen bonds to further form the silicon-deuterium bonds with stronger combination. Simultaneously, the silicon-deuterium bond energy is more than the silicon-hydrogen bond energy; and under the semiconductor process environment, the silicon-deuterium bonds are not easily broken due to external stress, so that the silicon dangling bonds positioned in the interface state are further reduced, the interface defects are reduced, and further the hot-electron effect is restrained.

A horn for vibratory solid-state ultrasonic welding of metals and similarly-behaved materials “self-levels” to produce wide continuous seams or large-area spot-welds between delicate workpieces without damage, even if the workpieces are not perfectly flat and parallel to the nominal toolface angle. The horn toolface flexes under pressure to conform to skew-angled workpieces because it is disposed on a tool head supported by a tool neck cut from the tool body. The tool head, the tool neck, or both are anisotropically compliant. When resonances are properly optimized for typical VSS modes of vibration, atypical but useful localized modes are excited at the compliant toolface edges, actually intensifying the bond energy where one might normally expect unwanted damping. Various design approaches optimize the characteristics of the tool head and tool neck to various materials and bonding configurations. The horns can be configured for use with existing ultrasonic welders.

The invention concerns a method for transferring a thin layer from a donor wafer onto a receiving wafer by implanting at least one atomic species into the donor wafer to form a weakened zone therein, with the weakened zone being including microcavities or platelets therein, and the thin layer being defined between the weakened zone and a surface of the donor wafer; molecular bonding of the surface of the donor wafer onto a surface of the receiving wafer; splitting the thin layer at the zone of weakness by heating to a high temperature to transfer the thin layer to the receiving substrate; and treating the donor wafer to block or limit the formation of microcavities or platelets by trapping the atoms of at least one of the implanted atomic species at least until a certain release temperature is reached during the splitting. This method enables bonding energy to be reinforced adjacent the layer to be transferred and hence limits defects in the resulting heterostructure.

The invention discloses an anode material of a lithium ion battery and a preparation method thereof. The anode material which is granular comprises: an internal nucleus which is a substance having a molecular formula of LixMn2-yMyNzO4; and an external surface crystal shell which is nitrogen-containing nanometer oxide particles. According to the anode material of the lithium ion batter disclosed in the invention, M is doped to replace partial Mn, and the crystal lattice volume is reduced because the bond energy of M-O is greater than the bond energy of Mn-O, so the spinel structure of lithium manganate is stabilized, the manganese solution in the cycle process is reduced, and the product cycle performance is improved. The preparation method of the anode material of the lithium ion battery disclosed in the invention, which allows the lithium manganese oxide to be doped and coated through a two-step reaction, has the advantages of simple production technology, no pollution, no waste discharge, simple equipment, low cost of raw materials and the production cost, and the like.

This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face;

• [0001]
  • b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E₀ between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum bonding energy compatible with the subsequent desolidarisation operation, the bonding energy E₀ being such that E₀=α.E, where E is the bonding energy that would be obtained if the front face of the wafer was completely planarised, α is the ratio between the incompletely planarised area of the front face of the wafer and the area of the front face of the wafer if it were completely planarised; c) solidarising the front face of the wafer on the bonding face of the support handle, by direct bonding; d) thinning the wafer starting from its back face until the thin layer is obtained; e) transferring the thin layer onto a usage support, involving separation from the support handle.

The invention relates to a production method of a superhydrophobic antifog glass and belongs to the technical field of materials. The superhydrophobic antifog glass is produced with hydrophobic nano silica particles; the surface of a glass material is coated with a layer of hydrophobic nano silica particles, so that surface wet state of the glass material is improved, small waterdrops formed of condensed vapor slip off under their gravity action, the surface pollutants are easily brought away by the waterdrops, and good self-cleaning effect is achieved. Trimethoxy(1H,1H,2H,2H-heptadecafluorodecyl)silane and 3-aminopropyltriethoxysilane are added herein to produce superhydrophobic antifog glass; since a superhydrophobic coating on the antifog glass contains F and Si atoms; F is an element of greatest electronegativity in the periodic table of elements, has very small atom radius and forms a very short F-Si bond having great bond energy; the surrounding of carbon chains of a fluorine atom polymer is in tight arrangement, so that the fluorine-bearing polymer has excellent weatherability, surface self-cleaning property, high temperature resistance, chemicals resistance and the like.

A solid-state hydrogen storage material and process for making the material more thoroughly rechargeable. The process entails forming a porous matrix material to contain atoms of a first element and hydrogen atoms, in which the atoms of the first element are capable of bonding with more than one hydrogen atom per atom of the first element, and the atoms of the first element are molecularly arranged within the porous matrix material so that different atoms of the first element are bonded to different numbers of hydrogen atoms at correspondingly different levels of bonding energy. At least some of the hydrogen atoms bonded to the atoms of the first element at the lowest bond energies are then removed without removing hydrogen atoms bonded at higher bond energies, after which atoms of a second element are bonded to those atoms of the first element from which hydrogen atoms were removed.

The invention discloses a manganese-based metal organic framework compound-coated lithium ion battery ternary positive electrode material. Based on the self-assembling performance of an MOFs material,coating of a spherical ternary positive electrode material is realized through a simple one-step method; the positive electrode material has a layered structure, is free of impurity phase, and structural changing of the material is not caused by coating; and the positive electrode material has a two-stage spherical-like structure formed by sheet-rod-like small particles in an clustering manner. The preparation method comprises the steps of 1) preparation of a precursor; 2) preparation of a spherical ternary positive electrode material; and 3) preparation of the manganese-based metal organic framework compound-coated ternary positive electrode material. According to the application as the battery positive electrode material, the discharge specific capacity is 160-180mAh g<-1> after 50 cycles of constant current charging and discharging at 0.5C; and the discharge specific capacity is 140-160mAh g<-1> at high rate of 10C. The positive electrode material has the advantages of providing porous channels, improving wetting degree, improving cycling stability and high-rate cycle performance, reinforcing stability of M-O bond energy, low cost, simple operation and suitability of large-scale production.

The invention relates to a flexible bonding copper wire and a preparation method thereof. The flexible bonding copper wire comprises the components: 0.001-0.005% of Ce, 0.003-0.005% of Pd, 0.005-0.009% of Pt and the rest of Cu. The invention adopts multielement doped alloy which is added with other components, so as to reduce the rigidity of copper, especially the balling rigidity, reduce the impact force and the damage for a chip, lower the bonding energy, prevent the generation of interfacial oxide and the crack, and ensure the combination performance to be stable, thus improving the combination performance, the electrical conductivity and the inoxidizability; by controlling the conditions of fusion casting, processing and hot treatment, the invention further optimizes the structure and guarantees the proper mechanical capacity, so as to meet different needs.

The invention belongs to the field of environmental protection and discloses a method for harmless treatment of sulfur-containing VOC. The method is as follows: (1) the catalyst is placed in the combustion furnace of the sulfur-containing VOC combustion treatment device, and the sulfur-containing VOC gas and the combustion-supporting gas are introduced; (2) the mixed sulfur-containing VOC gas and the combustion-supporting gas are placed in the catalytic combustion furnace Carry out catalytic combustion under the effect of the catalyzer, the gas gained after combustion is absorbed by alkaline substance at last; The catalyst described in step (1) is main catalyst, main catalyst and co-catalyst, main catalyst and carrier or main catalyst, co-catalyst and carrier. The method of the present invention is simple and efficient, and the catalyst used can increase the local concentration of sulfur-containing VOC gas and combustion-supporting gas, and can also weaken its chemical bond energy, increase its reactivity, and make the catalytic combustion of sulfur-containing VOC easier to carry out, and the reaction is more efficient. Thoroughly and effectively realize the harmless treatment of sulfur-containing VOC.

The present disclosure relates, according to some embodiments, to compositions, systems, and methods for preparing and using fluorescent through-bond energy transfer cassettes.

A carbon hydrogen structure (C: H) is one of the basic structures in the pharmaceutical chemistry structure and a formed C-H bond is the basic chemical bond. The invention discloses a preparation method and an application of deuterated drugs which can change the chemical bond energy and the hydrogen bond energy in the structure of pharmaceutical compound. The hydrogen atom (H) in pharmaceutical compound structure is substituted by the A deuterium atom (D) which is the isotope of hydrogen, therefore changing the molecular structure and the bond energy of the substituted pharmaceutical compound so as to form a new deuterated drug. The deuterated drugs can be used for pharmacokinetics research, can obviously enhance the disease-preventing or treating function of the drugs, and can reduce the toxic and side effect of the drugs.

A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface using a mix of NH₄OH/H₂O₂ to increase the bonding energy between the first and second wafers. The treatment parameters are chosen such that etching occurs that is sufficient to remove isolated particles from the oxidized surface, but that is sufficiently weak to smooth the surface without creating rough patches thereon. Also described is a thin layer removal process, which may advantageously be used to fabricate a semiconductor on insulator structure.

The invention discloses a method of preparing porous carbon and porous carbon. The method comprises the following steps: uniformly mixing a carbon source and an activator; drying the mixture; and carbonizing the mixture in an inert atmosphere to obtain porous carbon, wherein the carbon source contains one or more elements of N, P, B and S. By taking some materials containing elements such as N, P, B and C as the carbon source, the carbon source is activated through an activator to obtain porous carbon with a high specific surface area. As a C-N bond, a C-P bond, a C-B bond and a C-S bond are weaker than a C-C bond in bond energy, the activator will preferably etch impure elements such as N, P, B and S and surrounding carbon thereof so as to form uniform holes, so that the etching efficiency is improved and the specific surface area is improved.