4 results about "Bond energy" patented technology

The utility model discloses a high-binding-force polymer-based composite material which comprises a base material layer, prefabricated pit holes and process pit holes, first material layers are arranged on the upper side and the lower side of the base material layer correspondingly, and the sides, away from the base material layer, of the first material layers are connected with second material layers; prefabricated pit holes are formed in the outer sides of the upper surface and the lower surface of the base material layer; a process pit hole is formed in the surface of the side, away from the base material layer, of the first material layer. The prefabricated pit holes are formed in the surface of the base material layer at equal intervals, and the prefabricated pit holes are formed through laser etching. The utility model belongs to the technical field of composite materials, and aims to solve the problems of low bond energy and weak binding force of the whole polymer-based composite material due to small contact area at the joint in the prior art. The technical effects are as follows: the contact area of the joint can be effectively increased, and the overall binding force of the polymer-based composite material is increased.

The method is for homolytic and heterolytic cleavage in molecules of gases and liquids with the release of bonding energy and its use to change the internal geometric architecture of some molecules, leading to the synthesis of new chemical compounds that are not contained in the initial gases and liquids, with the secondary release of energy during the synthesis process, without carrying out nuclear reactions on equipment for its realization, characterised by an increase in the energy of the work environment and use of this energy to generate thermal energy with simultaneous synthesis of new chemical compounds, in consequence of the physical effect of a standing pressure wave on the gas and liquid molecules at various temperatures, where the temperature is a measure of activation energy, and subsequent dissociation of the molecules into atoms or fragments of molecules (radicals), partial ionization of atoms and subsequent transformation of the bonds in atoms of the molecules with no change to atomic number but with a change to atomic mass and in the proton-neutron ratio. The method also consists in the direct conversion of neutron mass into the mass equivalent to the total mass of 1 electron and 1 proton that do not go beyond the framework of the electrodynamic interaction of electrons and the nucleus, which ensures the absence of radiation, where the method also consists in the transformation of an atom into a chemical molecule or the reverse transformation of 1 electron and 1 proton into 1 neutron from the volume, where these elementary particles can be free, with external exchange of energy and mass equalling the mass with a positive charge and equal to the reduction in the mass of the neutron and proton. The method furthermore consists in a back reaction to the physical effect consisting in the formation of new chemical compounds that are not contained in the initial gases and liquids, with the release of the energy produced during the process of recombination of atoms into the original molecules, where the execution of the proposed method takes place through a combination of initial influences, such as for example: 12 C 1 H 4=16 Ne=16 O, while the method further consists in rearranging the architecture of some molecules without changing the atomic number, mass number, atomic weight as a reaction to a physical impact, during which new chemical compounds are synthesized, including those that they are not contained in the initial gases and liquids, while the energy generated during these synthesis reactions is released, for example 14 N 2=12 C 16 O; 12 C 16 O 2=14 N 2 16 O. The proposed method is implemented by a combination of initial influences, such as:increase in temperature of up to 250° C., ideally 140° C. to 150° C.;reduction in pressure (creation of a reduced atmosphere) to-100 kPa, ideally-65 kPa;generation of standing pressure waves;electric discharge (tribostatic discharge, barrier, spark) with a breakdown voltage of 1 to 15 kV;the value of the magnetic field in the reactor based on the discharge in the gas is 70 to 120 nTl;micro-explosions;impact, impact force, at which negative acceleration at from 50,000 to 150,000 g occurs;or a combination of these influences.The apparatus for converting hydrocarbon and non-hydrocarbon gases and liquids consists ofan acceleration module, which is a piece of apparatus accelerating a mixture of gas and liquid up to a speed of 30 to 400 m / s;a deceleration module, which is a tribostatic energy generator covering 70% to 90% of the reactor's cross-section;a tribostatic generator, which consists of two electrodes which are placed side by side an on which positive and negative charges are mutually created;a reduced atmosphere zone after the deceleration module.

The invention discloses a method for enhancing interfacial interaction and mechanical properties of an h-BN / C-S-H composite material, and belongs to the technical field of interfacial effects of building materials, and the method comprises the step of inserting a series of defective h-BN nanostructures between C-S-H layers to form a defective h-BN / C-S-H layered nanostructure. Through molecular dynamics calculation, the interface interaction and the tensile property of the h-BN / C-S-H layered nanostructure are quantified. According to the method for enhancing the interface interaction and the mechanical property of the h-BN / C-S-H composite material, the out-of-plane deformation of the h-BN is caused by introduction of defects, so that the contact area of the h-BN and the C-S-H interface is increased, the interface load transfer capacity of a C-S-H matrix is improved, and the tensile property of the C-S-H matrix is improved. According to a statistical mechanical theory and bond energy analysis, the defect h-BN reduces the stress concentration possibility of the h-BN / C-S-H layered nanostructure, so that the purpose of improving the mechanical property of the nanostructure is achieved.

A germanium-silicon heterojunction bipolar transistor structure and its formation method and crystal growth method are disclosed. The method includes: providing a substrate, the substrate including a base and a collector region located on the base; forming a mask layer structure on the substrate, the mask layer structure including a mask layer having a first opening, the mask layer including a host region and a surface region located on the host region, the chemical bonds of the host region material having a first bond energy, the surface region having doped ions, the chemical bonds formed by the doped ions and the ions of the surface region material having a second bond energy, the second bond energy being greater than the first bond energy; using the mask layer as a mask, employing a selective epitaxial process to form a main base region on the surface of the collector region under the first opening, thereby improving the growth selectivity of the main base region material and thus improving the process window.